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Navitas Semiconductor has announced their latest 12 kW power supply unit (PSU) ‘designed for production’ reference design for hyperscale AI data centers with high-power rack densities of 120 kW.
The 12 kW PSU complies with Open Rack v3 (ORv3) specifications and Open Compute Project (OCP) guidelines. It utilizes Gen-3 Fast SiC MOSFETs, a novel ‘IntelliWeave™’ digital platform, and high-power GaNSafe ICs configured in 3-phase interleaved TP-PFC and FB-LLC topologies to ensure the highest efficiency and performance, with the lowest component count.
The 3-Phase interleaved totem-pole power factor correction (TP-PFC) is powered by Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology, which has been enabled by over 20 years of SiC innovation leadership and offers world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
IntelliWeave digital control provides a hybrid control strategy of both Critical Conduction Mode (CrCM) and Continuous Conduction Mode (CCM), for light-load to full-load conditions, ensuring maximum efficiency while maintaining a simplistic design with low component count. This results in a 30% reduction in power losses compared to existing Continuous Conduction Mode (CCM) solutions.
The 3-phase interleaved full-bridge (FB) LLC topology is enabled by 4th generation high-power GaNSafe ICs, integrating control, drive, sensing, and critical protection features that allow unprecedented reliability and robustness. GaNSafe is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with four pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin. Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLL and TOLT packages are available with a range of RDS(ON)typ. from 18 to 70 mΩ.
The PSU is 790 x 73.5 x 40 mm and has an input voltage range of 180 – 305 VAC, outputting up to 50 VDC and delivering 12 kW when using input voltages above 207 VAC and 10 kW below this. Additionally, it implements active current sharing and over-current, over-voltage, under-voltage, and over-temperature protections. It has an operating temperature range of -5 to 45oC, a hold-up time of ³20 ms at 12 kW, and an inrush current of £3 times the steady-state current below 20 ms. Cooling is via the PSU’s internal fan.
“The continuation and leadership of Navitas’ AI power roadmap has seen a quadrupling in output power – from 2.7 to 12 kW – in just over 24 months,” said Gene Sheridan, CEO and co-founder of Navitas. “This increase in power delivery is vital for the world’s data centers to support the exponential power demanded by the latest GPU architectures. The ‘designed for production’ PSU enables our customers to quickly implement a highly efficient, simple, and cost-effective solution to address the power delivery challenges for AI and hyperscale data centers.”
The 12 kW PSU was presented at Navitas’ ‘AI Tech Night’ on 21st May, alongside the Computex exhibition in Taiwan.
Original – Navitas Semiconductor
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Infineon Technologies AG is revolutionizing the power delivery architecture required for future AI data centers. In collaboration with NVIDIA, Infineon is developing the next generation of power systems based on a new architecture with central power generation of 800 V high-voltage direct current (HVDC).
The new system architecture significantly increases energy-efficient power distribution across the data center and allows power conversion directly at the AI chip (Graphic Processing Unit, GPU) within the server board. Infineon’s expertise in power conversion solutions from grid to core based on all relevant semiconductor materials silicon (Si), silicon carbide (SiC) and gallium nitride (GaN) is accelerating the roadmap to a full scale HVDC architecture.
This revolutionary step paves the way for the implementation of advanced power delivery architectures in accelerated computing data centers and will further enhance reliability and efficiency. As AI data centers already are going beyond 100,000 individual GPUs, the need for more efficient power delivery is becoming increasingly important. AI data centers will require power outputs of one megawatt (MW) and more per IT rack before the end of the decade. Therefore, the HVDC architecture coupled with high-density multiphase solutions will set a new standard for the industry, driving the development of high-quality components and power distribution systems.
“Infineon is driving innovation in artificial intelligence,” said Adam White, Division President Power & Sensor Systems at Infineon. “The combination of Infineon’s application and system know-how in powering AI from grid to core, combined with NVIDIA’s world-leading expertise in accelerated computing, paves the way for a new standard for power architecture in AI data centers to enable faster, more efficient and scalable AI infrastructure.”
“The new 800V HVDC system architecture delivers high reliability, energy-efficient power distribution across the data center,” said Gabriele Gorla, vice president of system engineering at NVIDIA. “Through this innovative approach, NVIDIA is able to optimize the energy consumption of our advanced AI infrastructure, which supports our commitment to sustainability while also delivering the performance and scalability required for the next generation of AI workloads.”
At present, the power supply in AI data centers is decentralized. This means that the AI chips are supplied with power by a large number of power supply units (PSU). The future system architecture will be centralized, making the best possible use of the constraint space in a server rack. This will increase the importance of leading-edge power semiconductor solutions using fewest power conversion stages and allowing upgrades to even higher distribution voltages.
Infineon is a leader in power semiconductor solutions and systems integration. The company expects the proportion of power semiconductors in a centralized HVDC architecture to be similar or higher than in today’s AC distribution architecture. Additionally, to the scaling of the HVDC power architecture, Infineon continues to support state of the art DCDC multiphase solutions and intermediate architectures for hyperscalers and AI data center operators with a broad product portfolio based on all relevant semiconductor materials along the entire power flow.
Learn more about Infineon’s AI power and data center solutions here.
Original – Infineon Technologies
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Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched four 650V silicon carbide (SiC) MOSFETs, equipped with its latest 3rd generation SiC MOSFET chips and housed in a compact DFN8×8 package, suitable for industrial equipment, such as switched-mode power supplies and power conditioners for photovoltaic generators. Volume shipments of the four devices, “TW031V65C,” “TW054V65C,” “TW092V65C,” and “TW123V65C,” start today.
The new products are the first 3rd generation SiC MOSFETs to use the small surface-mount DFN8×8 package, which reduces volume by more than 90% compared to lead-inserted packages, such as TO-247 and TO-247-4L(X) and improves equipment power density. Surface mounting also allows use of parasitic impedance components smaller than those of lead-inserted packages, reducing switching losses.
DFN8×8 is a 4-pin package, allowing use of a Kelvin connection of its signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance; in the case of TW054V65C, it reduces turn-on loss by approximately 55% and turn-off loss by approximately 25% compared to current Toshiba products, helping to reduce power loss in equipment.
Toshiba will continue to expand its lineup to contribute to improved equipment efficiency and increased power capacity.
Applications
- Switched mode power supplies in servers, data centers, communications equipment, etc.
- EV charging stations
- Photovoltaic inverters
- Uninterruptible power supplies
Features
- DFN8×8 surface-mount package. Enables equipment miniaturization of and automated assembly. Low switching loss.
- Toshiba’s 3rd generation SiC MOSFETs
- Good temperature dependence of drain-source On-resistance by optimization of drift resistance and channel resistance ratio
- Low drain-source On-resistance×gate-drain charges
- Low diode forward voltage: VDSF=-1.35V(typ.) (VGS=-5V)
Original – Toshiba
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Littelfuse, Inc. announced the release of the IXD0579M high-speed gate driver IC. The IXD0579M simplifies board design, saves space, and offers a reliable, multiple-source alternative for driving N-channel MOSFETs or IGBTs in half-bridge configurations.
Designed to operate across a wide 6.5 V to 18 V supply range, the IXD0579M integrates a bootstrap diode and a series current limit resistor—components typically requiring discrete placement—into a single compact 3×3 mm² TDFN-10 package. This innovative integration reduces BOM count and cost while enabling easier PCB layout.
Key Product Features and Benefits
- High Drive Capability: 1.5 A source and 2.5 A sink output drive current
- Wide Supply Voltage Range: Operates from 6.5 V to 18 V with UVLO protection
- Integrated Bootstrap Circuitry: On-chip bootstrap diode and resistor simplify design
- Logic Level Compatibility: Interfaces directly with TTL and CMOS levels (down to 3.3 V)
- Cross-Conduction Protection: Prevents simultaneous high-side and low-side conduction
- Ultra-Low Standby Current: Less than 1 µA standby mode for energy efficiency
- Thermal Robustness: Operates from −40 °C to +125 °C
“With the IXD0579M, Littelfuse is offering a direct drop-in replacement for popular industry-standard gate driver ICs,” said June Zhang, Product Manager, Integrated Circuits Division at Littelfuse. “This gives customers greater flexibility to secure supply while simplifying their circuit design with an integrated solution.”
The IXD0579M is the first Littelfuse gate driver to feature both an integrated bootstrap diode and current limit resistor, expanding the company’s growing portfolio of power control solutions. As the eleventh high-side/low-side driver released by Littelfuse, it strengthens the company’s position in serving “multiple source” markets that demand performance and supply chain continuity.
Engineered for high-frequency switching, the IXD0579M is ideal for:
- Brushless DC (BLDC) motor drives
- Battery-powered hand tools
- DC-DC converters and power supplies
- General industrial and electrical equipment
It’s compact footprint and robust performance make it well-suited for space-constrained designs and high-efficiency power stages.
Original – Littelfuse
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Infineon Technologies AG will supply Rivian’s R2 platform with power modules for traction inverters. The R2 platform will use silicon carbide (SiC) and silicon (Si) modules from Infineon’s HybridPACK™ Drive G2 family. Supply is expected to start in 2026. Additionally, Infineon will supply other products for the platform, including AURIX™ TC3x microcontrollers and power management ICs.
“We are committed to enhancing the performance and range of electric vehicles jointly with innovative automotive companies like Rivian,” said Stefan Obersriebnig, head of the product line for high voltage modules in Infineon’s Automotive Division. “Our dedication for innovation and zero-defect quality has made us the preferred partner of the automotive industry. With our broad product portfolio, system expertise and manufacturing capabilities, we are a key enabler of emission-free, sustainable mobility.”
HybridPACK Drive is Infineon’s market-leading power module family for electric vehicles. With more than 10.5 million units sold since 2017, it contributes significantly to the transition to electromobility. This transition will lead to strong market growth for power semiconductors, especially those based on wide bandgap materials like SiC.
With the expansion of its Kulim fab, Infineon is building the world’s most competitive 200-millimeter SiC power fab and further strengthens its market-leading role as a high-quality, high-volume supplier to the automotive industry. As “Infineon One Virtual Fab” for highly innovative wide bandgap (WBG) technologies, Infineon’s production sites in Kulim and Villach share technologies and processes. This allows for fast ramping and smooth and highly efficient operations in SiC and gallium nitride (GaN) manufacturing and reinforces Infineon’s technological leadership across the spectrum of all power semiconductor materials, in silicon as well as SiC and GaN.
Original – Infineon Technologies
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Applied Materials, Inc. announced record-breaking financial results for its second fiscal quarter ended April 27, 2025, demonstrating continued strength across its core markets amid a dynamic global landscape.
Financial Highlights – Q2 FY2025 (GAAP)
- Revenue: $7.10 billion, up 7% year over year
- Gross Margin: 49.1%
- Operating Margin: 30.5%
- Net Income: $2.14 billion, up 24%
- Earnings Per Share (EPS): $2.63, a record, up 28% YoY
- Cash from Operations: $1.57 billion
- Shareholder Returns: $2.0 billion returned via $1.67B in share repurchases and $325M in dividends
Non-GAAP Performance
- Gross Margin: 49.2%
- Operating Margin: 30.7%
- EPS: $2.39, up 14% YoY
- Net Income: $1.94 billion
- Free Cash Flow: $1.06 billion
“Applied Materials’ broad capabilities and connected product portfolio are driving strong results in 2025 amidst a highly dynamic macro environment,” said Gary Dickerson, President and CEO. “High-performance, energy-efficient AI computing remains the dominant driver of semiconductor innovation, and Applied is working closely with our customers and partners to accelerate the industry’s roadmap.”
“We delivered strong performance in our second fiscal quarter with 7% year-over-year revenue growth, record earnings per share, and shareholder distributions of nearly $2 billion,” said Brice Hill, CFO. “Despite the dynamic economic and trade environment, we have not seen significant changes to customer demand and are well-equipped to navigate evolving conditions with our robust global supply chain and diversified manufacturing footprint.”
Business Segment Highlights
Semiconductor Systems
- Revenue: $5.26B (up from $4.90B YoY)
- Operating Margin: 36.2% GAAP; 36.4% Non-GAAP
- Segment driven by strong demand in foundry, logic, and improving NAND/DRAM investment.
Applied Global Services
- Revenue: $1.57B
- Operating Margin: 28.5% GAAP and Non-GAAP
- Continued stability and long-term service contracts contribute to consistent profitability.
Display and Adjacent Markets
- Revenue: $259M (up from $179M YoY)
- Operating Margin: 26.3% GAAP and Non-GAAP
- Sharp recovery driven by next-gen display investments.
Q3 FY2025 Guidance (Non-GAAP)
- Revenue: $7.20B ± $500M
- Gross Margin: ~48.3%
- EPS: $2.35 ± $0.20
Applied expects continued momentum in AI-enabling technologies and mature node innovations to support sustained growth through the remainder of the fiscal year.
Original – Applied Materials
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Toshiba Corporation announced its consolidated financial results for FY2024 (ending March 31, 2025), reporting its highest net sales, operating income, and net income since divesting its memory business. The company recorded 198.5 billion yen in operating income, nearly five times that of the previous fiscal year, and 279.0 billion yen in net income, marking a strong recovery across all business segments.
This performance underscores Toshiba’s successful execution of its “Revitalization Plan,” launched in FY2023, and reflects significant gains across infrastructure, digital, and industrial solutions. According to Koji Ikeya, Corporate Senior Executive Vice President, “FY2024 was a pivotal year of transformation and foundation-building. The results reflect the impact of management reforms, disciplined risk management, and ongoing structural efficiency improvements.”
Semiconductor-Driven Digital Solutions Segment Delivers Resilience
Among the standout contributors to this year’s results was Toshiba’s Digital Solutions segment, which includes key semiconductor-linked businesses such as embedded systems, power electronics platforms, and software-defined control solutions. Sales in this segment increased year-over-year, benefiting from sustained demand in data processing, industrial automation, and smart infrastructure applications.
The strong recovery of affiliate Kioxia Holdings—a leader in NAND flash memory—also contributed significantly to equity earnings, helping propel Toshiba’s net income to its highest level in years.
Infrastructure Strength and Order Growth
Toshiba reported strong YoY growth in orders and backlog for Energy Systems & Solutions and Infrastructure Systems & Solutions, driven by large-scale global projects in power transmission, rail, and renewable energy. The company emphasized that both orders received and order backlog reached their highest levels since FY2018, reinforcing a strong foundation for FY2025.
Outlook for FY2025 and Beyond
Toshiba enters FY2025 with momentum as it shifts from recovery to growth. With the second year of its revitalization strategy now underway, the company is targeting sustained profitability improvements and a return on sales (ROS) of 10% by FY2026.
Across its semiconductor-related operations and digital platforms, Toshiba continues to align its product development toward long-term trends in decarbonization, digitalization, and resilience in global supply chains.
Original – Toshiba
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On the occasion of its 25th anniversary, Infineon Technologies AG is launching a globally integrated campaign to highlight the economic and societal significance of semiconductor technology and of the company as a driver of decarbonization and digitalization. The anniversary campaign’s central message is that the products and solutions made by Infineon are important to each and every one of us on a daily basis. The substantive core of the campaign is the emotional testimonial series “Matters to me”.
“Our IPO on 13 March 2000 was a courageous step on the way to becoming a leading global technology company. Today we can look back on an unbelievable story of growth,” says Andreas Urschitz, Chief Marketing Officer and Member of the Management Board. “Our innovative strength, our quality demands and the will to continuously develop the company are decisive factors in our success. Our products and solutions let us help shape the transition from fossil technologies to climate-neutral technologies and make a better future possible. This is another aspect we want our campaign to emphasize.”
“We want our communications work to fundamentally increase awareness and highlight the significance of our semiconductor technologies and of Infineon itself among the general public. Our corporate anniversary is of course an important occasion to do just that,” says Florian Martens, Chief Communications Officer. “Our campaign addresses our target groups around the world in an emotional manner. Involving the employees also strengthens the sense of identification with the company.”
As part of the central motto “Matters to me”, testimonials from customers, employees, end-users and others document the significance which semiconductors from Infineon have for them. This includes technical aspects, but also highly personal insights. Thus for example the manager of a French automobile component supplier shares what she finds important about working together with partners like Infineon to drive the decarbonization of the automotive industry forward.
While the “Matters to me” motto forms a global framework, the campaign also leaves room for topically oriented regional focus areas. Infineon is disseminating the campaign in its 360° brand strategy via all online and offline channels and is integrating the campaign in existing communications planning. Accordingly, previously planned event formats will be conducted as milestones in the anniversary campaign well into the fall. The campaign web page is available at https://www.infineon.com/25years.
Original – Infineon Technologies
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Ideal Power Inc. reports results for its first quarter ended March 31, 2025.
“We had a strong start to the year as we completed SSCB prototypes related to our first design win three months ahead of schedule. We expect industrial markets, particularly the SSCB market, to be the earliest source of our initial sales ramp starting in the second half of this year. In addition, based on positive feedback from Stellantis, we expect to not only continue advancing the drivetrain inverter program but also add a new high priority program for EV contactors,” stated Dan Brdar, President and Chief Executive Officer of Ideal Power. “I am excited to announce today that we secured an order from a third Forbes Global 500 power management market leader interested in B-TRAN® for circuit protection for power distribution systems with a focus on DC microgrids for solar and wind.”
Brdar continued, “We expect minimal impact from recently enacted tariffs, although the situation remains dynamic with rapidly changing tariffs and trade policies. Power semiconductors are exempt from most tariffs currently in effect, including those applicable to the countries where we fabricate B-TRAN® wafers.”
Key First Quarter and Recent Operational Highlights
Execution to B-TRAN® commercial roadmap continues, including:
- Completed solid-state circuit breaker (SSCB) prototypes related to the first design win three months ahead of schedule. The customer completed their initial prototype testing and Ideal Power continues to collaborate with this customer on their first B-TRAN®-enabled SSCB product.
- Potential new EV contactor program with Stellantis is advancing through their internal approval process. This would be the second program with Stellantis in addition to the drivetrain inverter program.
- Secured order from Forbes Global 500 leader in diverse power management markets. The customer purchased a SSCB evaluation board inclusive of discrete B-TRAN® devices. Now engaged with three Forbes Global 500 power management market leaders.
- Sekorm Advanced Technology (Shenzhen) Co., Ltd., a demand-creation distributor of Ideal Power, secured an order for discrete B-TRAN® devices, SymCool® power modules and SSCB evaluation boards from a new customer for SSCB applications.
- Shipped SSCB evaluation boards and discrete B-TRAN® devices to several potential design win customers.
- Secured sales representative partnership with Queensland Semiconductor Technologies (aka Quest Semi) which expands company’s reach into key markets in Europe and Asia. Ideal Power’s products will be a complementary offering for Quest Semi to sell into their existing and prospective customer base along with their own product portfolio.
- B-TRAN® Patent Estate: Currently at 94 issued B-TRAN® patents with 45 of those issued outside of the United States and 70 pending B-TRAN® patents. Current geographic coverage includes North America, China, Taiwan, Japan, South Korea, India, and Europe.
First Quarter 2025 Financial Results
- Cash used in operating and investing activities in the first quarter of 2025 was $2.1 million compared to $2.0 million in the first quarter of 2024.
- Cash and cash equivalents totaled $13.7 million at March 31, 2025.
- No long-term debt was outstanding at March 31, 2025.
- Commercial revenue was $12,003 in the first quarter of 2025 compared to $78,739 in the first quarter of 2024.
- Operating expenses in the first quarter of 2025 were $2.8 million compared to $2.5 million in the first quarter of 2024 driven primarily by higher research and development spending.
- Net loss in the first quarter of 2025 was $2.7 million compared to $2.5 million in the first quarter of 2024.
Original – Ideal Power
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Navitas Semiconductor will host an “AI Tech Night” event in Taipei, Taiwan, bringing together industry experts, supply chain partners, and technology developers for keynote speeches, demonstrations, and interactive discussions. The event will focus on how high-power GaNSafe™ and GeneSiC™ technologies are transforming AI data center infrastructure by overcoming efficiency and power density challenges to meet the growing power demands of AI and hyperscale data centers. Navitas will debut its next-generation OCP data center power supply unit (PSU) reference design, which has been ‘designed for production’ and achieves the world’s highest power density, performance, and efficiency.
With each GPU power exceeding 1,000W and AI cluster computing demand doubling every three months, traditional power supply technologies are struggling to keep pace with the evolving needs for energy efficiency and power density in AI infrastructure. Navitas’ GaN and SiC solutions will showcase the breakthrough of conventional architectural limitations and enable more efficient, high-density, and sustainable data center development.
Navitas ‘AI Power Roadmap’ was created in 2023, focusing on next-generation AI data center power delivery. The initial PSU was a high-speed, high-efficiency 2.7 kW CRPS (common redundant power supply), which offered 2x higher power density and a 30% reduction in energy loss. A 3.2kW CRPS followed, achieving a 40% smaller size than best-in-class, legacy silicon solutions for power-hungry AI and Edge computing. Next was the world’s highest-power-density 4.5kW CRPS, achieving 137W/in3 and an efficiency of over 97%. In November 2024, Navitas released the world’s first 8.5kW AI data-center power supply powered by GaN and SiC that could meet 98% efficiency, complying with the Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications. Additionally, Navitas created IntelliWeave, a patented new digital control technique that, when combined with high-power GaNSafe and Gen 3-Fast SiC MOSFETs, enables PFC peak efficiencies of 99.3% and reduces power losses by 30% compared with existing solutions.
Navitas will also highlight the world’s first mass-produced 650V Bi-Directional GaNFast™ power ICs and IsoFast™ high-speed isolated gate drivers. These technologies drive a paradigm shift from traditional two-stage to single-stage power topologies, optimizing data center power supply design, reducing form factors, and increasing rack space utilization.
“The exponential growth of AI computing power poses stringent challenges for data center infrastructure. The debut of our latest AI data center PSU achieves dual breakthroughs in efficiency and power density, demonstrating Navitas’ continuous innovation in GaN and SiC technologies and deep understanding of the data center industry”, said Charles Zha, SVP and APAC GM of Navitas. “With years of focus on the Asia-Pacific market, we remain committed to aligning cutting-edge technologies with local needs and industry strengths. We look forward to collaborating with industry partners to explore how GaN and SiC innovation can drive efficiency and density upgrades in AI data centers, ensuring computing development progresses along with a sustainable future.”
The “AI Tech Night” will take place on May 21st, 2025, 6:30 pm-9:00 pm, at the Courtyard by Marriott Taipei. To participate in the ‘AI Tech Night’ event, please contact info@navitassemi.com.
Original – Navitas Semiconductor
