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SemiQ to Showcase Latest SiC Power Solutions and Known-Good-Die Screening Process at PCIM Europe 2024
SemiQ to Showcase Latest SiC Power Solutions and Known-Good-Die Screening Process at PCIM Europe 2024
DISCO Corporation has developed a process for diamond wafer manufacturing that applies the KABRA process, an ingot slicing method using laser technology. This process contributes to increasing the diameter of diamond wafers.
Taiwan Semiconductor ā a global supplier of discrete power electronics devices, LED drivers, analog ICs and ESD protection devices ā announced a family of 650V silicon carbide Schottky barrier diodes which are suitable for high-efficiency AC-DC, DC-DC and DC-AC conversion applications.
WeEn’s latest research and development effort, the BYC100MW-600PT2, will enable customers to achieve designs for 40kW+ high-power, high-efficiency charging modules. The WND60P20W will offer customers a higher voltage design margin to meet the demands of more complex andĀ ichallenging application scenarios, thereby supporting the rapid development of new energy vehicles and the achievement of low-carbon objectives.
Littelfuse, Inc.Ā announced the launch of the IX4352NE Low-side SiC MOSFET and IGBT Gate Driver. This innovative driver is specifically designed to drive Silicon Carbide (SiC) MOSFETs and high-power Insulated Gate Bipolar Transistors (IGBTs) in industrial applications.
DACO Semiconductor has developed new platforms of Power MOSFET products called Standard HV Power MOSFETs and High Performance HV Power MOSFETs that cover 900V and 1200V range. Those HV MOSFETs are designed with a proprietary cell design and undergo process improvements that dramatically enhance the power handling capability and system efficiency.