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Nexperia introduces a range of highly efficient and robust industrial grade 1200 V silicon carbide (SiC) MOSFETs with industry leading temperature stability in innovative surface-mount (SMD) top-side cooled packaging technology called X.PAK. This package, with its compact form factor of 14 mm x 18.5 mm, combines the assembly benefits of SMD with the cooling efficiency of through-hole technology, ensuring optimal heat dissipation.
This release addresses the growing demand from a broad range of high power (industrial) applications for discrete SiC MOSFETs that harness the advantages of top-side cooling to deliver exceptional thermal performance. These switches are ideal for industrial applications such as battery energy storage systems (BESS), photovoltaic inverters, motor drives, and uninterruptible Power Supplies (UPS). Additionally, they are well-suited for electric vehicle charging infrastructure, including charge piles.
The X.PAK package further enhances the thermal performance of Nexperia’s SiC MOSFETs by reducing the negative impacts of heat dissipation via the PCB. Furthermore, Nexperia’s X.PAK package enables low inductance for surface mount components and supports automated board assembly.
The new X.PAK packaged devices deliver class-leading figures-of-merit (FoM) known from Nexperia SiC MOSFETs, with RDS(on) being a particularly critical parameter due to its impact on conduction power losses. However, many manufacturers concentrate on the nominal value of this parameter and neglect the fact that it can increase by more than 100% as device operating temperatures rise, resulting in significant conduction losses. Nexperia SiC MOSFETs, on the other hand, offer industry-leading temperature stability, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25 °C to 175 °C.
“The introduction of our SiC MOSFETs in X.PAK packaging marks a significant advancement in thermal management and power density for high-power applications,” said Katrin Feurle, Senior Director and Head of SiC Discretes & Modules at Nexperia. “This new top-side cooled product option builds on our successful launches of discrete SiC MOSFETs in TO-247 and SMD D2PAK-7 packages. It underscores Nexperia’s commitment to providing our customers with the most advanced and flexible portfolio to meet their evolving design needs.”
The initial portfolio includes products with RDS(on) values of 30, 40, 60 mΩ (NSF030120T2A0, NSF040120T2A1, NSF060120T2A0), a part with 17 mΩ will be released in April 2025. An automotive qualified SiC MOSFETs portfolio in X.PAK packaging will follow later in 2025, as well as further RDson classes like 80 mΩ.
Original – Nexperia
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The 600 V CoolMOS™ 8 high-voltage superjunction (SJ) MOSFET product family from Infineon Technologies AG has allowed Enphase Energy, a global energy technology company and a leading supplier of microinverter-based solar and battery systems, to simplify its system design and reduce assembly costs. By using the 600 V CoolMOS 8 SJ, Enphase is able to significantly reduce MOSFET resistance (R DS(on)) for its solar inverter systems, leading to lower conduction losses, which improves overall device efficiency and boosts power density. In addition, the company achieved MOSFET related cost savings.
“We are thrilled to partner with Enphase and support their mission to deliver innovative solar energy solutions,” said Richard Kuncic, Senior Vice President and General Manager at Infineon. “Our 600 V CoolMOS 8 SJ MOSFETs are designed to provide superior efficiency, reliability, and cost savings, which aligns perfectly with Enphase’s and Infineon’s commitment to advancing the performance and affordability of renewable energy technologies, further driving decarbonization.”
“Collaborating with Infineon has allowed us to leverage their CoolMOS 8 SJ MOSFET technology to enhance the performance and cost-effectiveness of our microinverter systems,” said Aaron Gordon, Senior Vice President and General Manager of the Systems Business Unit at Enphase Energy. “This partnership underscores our dedication to innovation and excellence in the solar energy industry, and we are excited about the significant improvements in power density and cost savings that we are now able to offer our customers.”
Infineon’s latest CoolMOS 8 MOFETs at 600 V are leading the way in high-voltage superjunction MOSFET technology worldwide, setting the standard for both technology and price performance on a global scale. The technology increases overall system performance and further reinforces decarbonization in applications such as chargers and adapters, solar and energy storage systems, EV charging, and uninterruptible power supplies (UPS).
The CoolMOS 8 SJ MOSFETs have an 18 percent lower gate charge than the CFD7 and 33 percent lower than the P7 series. A reduced gate charge allows for less electric charge to be applied to the gate of a MOSFET to switch it from the off state (non-conducting) to the on state (conducting), enabling a more energy-efficient system performance.
Additionally, the CoolMOS 8 SJ MOSFETs have the quickest turn-off time in the market and their thermal performance has been improved by 14 to 42 percent compared to the previous generation. The 600 V CoolMOS 8 SJ technology is equipped with an integrated fast body diode and is available in SMD-QDPAK, TOLL, and Thin-TOLL 8×8 packages, making it suitable for a wide range of consumer and industrial applications.
Samples for the portfolio extension of 600 V CoolMOS 8 SJ MOSFETs and 650 V CoolMOS 8 SJ MOSFETs are available from early April on.
Original – Infineon Technologies
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onsemi introduced the first generation of its 1200V silicon carbide (SiC) metal oxide semiconductor field-effect transistor (MOSFET) based SPM 31 intelligent power modules (IPMs). onsemi EliteSiC SPM 31 IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to using Field Stop 7 IGBT technology, resulting in lower total system cost than any other leading solution on the market.
Their improved thermal performance, reduced power losses and ability to support fast switching speeds makes these IPMs ideally suited for three-phase inverter drive applications such as electronically commutated (EC) fans in AI data centers, heat pumps, commercial HVAC systems, servo motors, robotics, variable frequency drives (VFDs), and industrial pumps and fans.
The EliteSiC SPM 31 IPMs offer several current ratings from 40A to 70A. Complemented by onsemi’s IGBT SPM 31 IPM portfolio, covering low currents from 15A to 35A, onsemi now provides the industry’s broadest range of scalable and flexible integrated power module solutions in a small package.
In 2023, operations of residential and commercial buildings accounted for 27.6% of U.S. end-use energy consumption. As electrification and AI adoption grow, particularly with the construction of more AI data centers increasing energy demands, the need to reduce the energy consumption of applications in this sector is becoming more critical. Power semiconductors capable of efficiently converting electric power are the key in this transition to a low-carbon-emissions world.
With the number and size of data centers growing, the demand for EC fans is expected to rise. These cooling fans maintain the ideal operating environment for all equipment in a data center and are essential for accurate, error-free data transmission. The SiC IPM ensures the EC fan operates reliably and at its highest efficiency.
Like many other industrial applications such as compressor drives and pumps, EC fans require higher power density and efficiency than existing larger IGBT solutions. By switching to EliteSiC SPM 31 IPMs, customers can benefit from a smaller footprint, higher performance, and a simplified design due to high integration, resulting in shortened development time and lower total system cost in addition to reduced GHG emissions. For example, compared to a system solution that uses a current IGBT power integrated module (PIM) with power losses of 500W at 70% load, implementing highly efficient EliteSiC SPM 31 IPMs could reduce the annual energy consumption and cost per EC fan by 52%.
The fully integrated EliteSiC SPM 31 IPM consists of an independent high side gate driver, low voltage integrated circuit (LVIC), six EliteSiC MOSFETs and a temperature sensor (voltage temperature sensor (VTS) or thermistor). The module is based on the industry-leading M3 SiC technology that shrinks die size and is optimized for hard-switching applications with improved short-circuit withstand time (SCWT) performance when used in the SPM 31 package, making them suitable for inverter motor drives for industrial use. The MOSFETs are configured in a three-phase bridge with separate source connections for the lower legs for maximum flexibility in the choice of control algorithm.
In addition, the EliteSiC SPM 31 IPMs include the following benefits:
- Low loss, short-circuit-rated M3 EliteSiC MOSFETs to prevent catastrophic equipment and component failures such as electric shock or fire.
- Built-in under-voltage protection (UVP) to protect against damage to the device when voltage is low.
- As the peer-to-peer product of FS7 IGBT SPM 31, customers can choose between various current ratings while using the same PCB board.
- UL certified to meet national and international safety standards
- Single-grounded power supply offering better safety, equipment protection and noise reduction.
- Simplified design and reduced size of customer boards due to
- Included controls for gate drivers and protections
- Built-in bootstrap diodes (BSDs) and resistors (BSRs)
- Internal boost diodes provided for high side gate boost drive
- Integrated temperature sensor (VTS output by LVIC and/or thermistor)
- Built-in high-speed high-voltage integrated circuit
Original – onsemi
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NoMIS Power has announced a major breakthrough in improving the short-circuit withstand time (SCWT) of SiC MOSFETs. This innovation addresses one of the key challenges limiting the widespread adoption of SiC technology in high-power applications.
Silicon carbide (SiC) devices have gained prominence in power electronics due to their high efficiency, fast switching, and superior thermal performance. However, their historically lower short-circuit robustness compared to silicon-based IGBTs has posed challenges for their use in high-voltage and high-reliability environments, such as industrial drives, electric vehicles, and grid applications. NoMIS Power’s latest advancement significantly extends the SCWT of SiC MOSFETs to a minimum of 5 µs (Fig. 1), compared to the current industry standard of 2-3 µs, with no deleterious effect on specific on-resistance (Ron,sp) (Fig. 2). This enhancement greatly improves reliability and unlocks new opportunities for system designers seeking to maximize performance while maintaining fault tolerance.
Figure 1: Drain currents of the NoMIS Power SiC MOSFET and NoMIS Power SiC MOSFET with long SCWT under short-circuit conditions right before failure. Drain currents of the 1.2 kV, 80 mΩ SiC MOSFET (dark blue) and the long SCWT 1.2 kV, 80 mΩ SiC MOSFET (light blue) from NoMIS Power are compared. The measurement for short-circuit was conducted under the following conditions: Rg of 20 Ω, Vgs of 20 V, and a Vds of 800 V.
By tuning the trade-off between Ron,sp and SCWT using NoMIS Power’s proprietary SiC MOSFET fabrication design and process flow, the performance shown in Fig. 1 & Fig. 2 was achieved; and can be similarly managed depending on the specific application. Complete optimization of SiC MOSFETs with long SCWT using this approach will allow NoMIS Power to further extend the SCWT while maintaining negligible impact on Ron,sp.
Figure 2: Typical output characteristics of NoMIS Power 1.2 kV, 80 mQ SiC MOSFET and NoMIS Power 1.2 kV, 80 mQ SiC MOSFET with long SCWT showing no significant negative impact on on-resistance.
“At NoMIS Power, we have focused extensively on device architecture engineering, leading to a significant advancement in SiC short-circuit withstand time,” said Woongje Sung, CTO at NoMIS Power. “We believe this achievement provides valuable advantages to the power electronics community, helping engineers integrate SiC solutions with greater confidence in applications where robustness is critical.”
NoMIS Power’s long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) design for high di/dt and dv/dt, enabling faster switching frequencies of up to hundreds of kHz. Initial test results demonstrate a 2X to 4X increase in short-circuit withstand time compared to existing SiC devices, positioning NoMIS Power’s technology as a frontrunner in the next generation of power semiconductors. Additionally, when coupled with packaging innovations that impact junction-to-case thermal capacitance, alongside novel thermal management techniques with high heat transfer coefficients, the overall SCWT of the SiC MOSFET can be further improved.
The impact of this innovation extends across multiple industries, including renewable energy, electric transportation, and high-power industrial applications. A longer short-circuit withstand time ensures rugged and reliable performance in critical applications, reinforcing the robustness of SiC-based power systems. For example, built-in redundancy of the SiC MOSFETs inside power converters, which impacts costs as well as power density, can be reduced. Furthermore, applications sensitive to electromagnetic inference, that cannot solely rely on digital control and sensing schemes to detect and act upon short-circuit events, will now be able to effectively utilize SiC MOSFETs with lower risk. As SiC adoption accelerates, NoMIS Power’s breakthrough will play a pivotal role in enhancing the reliability and safety of SiC-based power converters and systems.
NoMIS Power is showcasing this breakthrough technology at APEC 2025, March 16-20, Atlanta, GA, Booth 548 along with its expanded range of SiC discretes and power modules.
Original – NoMIS Power
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Magnachip Semiconductor Corporation announced a significant expansion of its product lineup with the launch of 25 new 6th-generation (Gen6) SJ MOSFETs (Super Junction Metal-Oxide-Semiconductor Field-Effect Transistors).
The switching speeds of the newly developed Gen6 SJ MOSFETs have been improved by approximately 23%, reducing the RSP of applications by about 40% compared to the previous generation, thereby enhancing the Figure of Merit by 40%.
Additionally, a Zener diode is embedded between the gate and source to enhance reliability and protect the SJ MOSFETs from ESD-induced damage. The chip sizes of the new products are also approximately 30% smaller than their predecessor product.
The new product lineup consists of 600V, 650V, and 700V voltage ratings and is available in 7 package types, including TO220, TO220FT, SOT223, PDFN88, and D2PAK, with high-demand options, such as DPAK and TO220F.
As a result, these SJ MOSFETs are well-suited for various applications requiring high power efficiency, including AI TVs, smart refrigerators, AI laptop adapters and power supplies. According to market research firm Omdia, the global smart home device market is projected to grow by 20% annually from 2025 to 2028.
“With the successful launch of 25 new Gen6 SJ MOSFETs integrating Magnachip’s latest technology, we have further strengthened our product lineup to meet our customers’ evolving technical requirements,” said YJ Kim, CEO of Magnachip. “By delivering optimal power solutions for the AI, industrial applications and smart home appliances, we aim to contribute to the growth and success of our customers in these sectors, and further advance our technology and market leadership as we transition to a pure-play Power company.”
Original – Magnachip Semiconductor
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Alpha and Omega Semiconductor Limited (AOS) announced the release of two state-of-the-art surface mounting package options for its industry-leading high power MOSFET portfolio. Designed to meet the robust packaging requirements for the most demanding applications that require increased performance and reliability, the new GTPAK™ and GLPAK™ packages will first be available on AOS’ AOGT66909 and AOGL66901 MOSFETs respectively. Combining AOS-proven robust MOSFET technology with advanced packaging know-how, these devices provide low ohmic and high current capabilities, critical to reducing the number of parallel MOSFETs needed in high current designs such as in next-generation e-mobility and industrial applications.
The GTPAK offered with the AOGT66909 is a topside cooling package designed with a large exposed pad for more efficient heat transfer. The topside cooling technology transfers most heat to the heat sink mounted on the top exposed pad. This feature allows the GTPAK to offer a more effective thermal dissipation route than going through the PCB board, allowing a lower-cost PCB, such as FR4, to be used.
The GLPAK offered with the AOGL66901 is a gull-wing version of AOS’ successful TOLL package. It is designed using AOS’ advanced clip technology to achieve a high inrush current rating. The GLPAK with clip technology offers very low package resistance and parasitic inductance, improving EMI performance compared to other package types that employ standard wire bonding.
The GTPAK and GLPAK packages feature gull-wing leads, enabling excellent solder joint reliability even for insulated metal substrates (IMS) applications. This gull-wing construction also provides enhanced thermal cycling for IMS boards and other critical applications that must meet higher reliability objectives. AOS MOSFETs in the new GTPAK and GLPAK packages are manufactured in IATF16949-certified facilities and are compatible with automated optical inspection (AOI) manufacturing requirements.
“We are committed to delivering new solutions to help our customers meet or exceed their power performance requirements. By offering our industry-leading MOSFETs in the new robust GTPAK and GLPAK packages, AOS allows designers to select from two state-of-the-art packaging technologies that offer significant performance improvements. Furthermore, the advanced technologies in our AOGT66909 and AOGL66901 MOSFETs will help simplify new designs by reducing the number of devices needed while also providing the necessary higher current capability that makes overall system cost savings possible,” said Peter H. Wilson, Marketing Sr. Director of MOSFET product line at AOS.
Technical Highlights
Continuous Drain
Current (A)Pulsed Drain
Current (A)RDS(ON) Max
(mOhms)Part Number Package VDS
(V)VGS
(±V)TJ
(°C)@25°C @100°C @25°C @10V AOGT66909 GTPAK 100 20 175 366 258 1464 1.5 AOGL66901 GLPAK 100 20 175 448 316 1790 1.25 Original – Alpha and Omega Semiconductor
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Infineon Technologies AG announced the addition of P-channel power MOSFETs to its family of radiation-tolerant power MOSFETs for Low-Earth-Orbit (LEO) space applications. The new devices are part of Infineon’s expanding portfolio designed for next-generation “NewSpace” applications, providing cost-optimized radiation-tolerant MOSFETs that enable engineers to achieve faster time-to-market designs using smaller and lighter weight components with radiation performance suitable for missions lasting two to five years.
“Successful deployment of next-generation LEO satellite constellations and other space-ready systems require radiation-tolerant discretes and ICs with lead times and production volumes that enable rapid deployment and cost optimization,” said Chris Opoczynski, Sr. VP and General Manager, High Reliability (HiRel) Business, Power and Sensor Systems Division, Infineon . “Infineon is leveraging its 50-years of space heritage to bring an industry-first portfolio of efficient and reliable power devices to this dynamic sector of the business.”
The new 60 V P-channel MOSFET complements the already available 60 V and 150 V N-channel devices, all offered in plastic packaging, which is lower in cost than the traditional hermetic packaging used in rad-hardened devices and can be produced in higher volumes using standard manufacturing practices.
The radiation-tolerant discretes are qualified for space applications according to the relevant tests of the AEC-Q101 standard. Additional package tests such as outgas and salt atmosphere tests are included as part of the qualification, and they are rated for Single Event Effects (SEE) at 46 MeV∙cm²/mg LET and a Total Ionizing Dose (TID) of 30 to 50 krad (Si). The operating temperature rating is -55 °C to 175 °C (maximum). State-of-the-art technologies, like the patented CoolMOS™ superjunction technology used for the N-channel MOSFETs enables Field Effect Transistors (FETs) from Infineon to offer fast switching capabilities as compared to alternative solutions.
Original – Infineon Technologies
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Leapers Semiconductor has officially commenced construction of its automotive-grade third-generation power semiconductor module project in Jiangdu District’s development zone. The launch event was part of Jiangdu District’s Major Project Construction Mobilization Conference, where local officials outlined key economic initiatives for the region. District Party Secretary Zhu Lili delivered a speech at the ceremony, emphasizing the urgency of driving economic growth from the start of the year. District Mayor Shen Bohong presided over the event, with key government representatives also in attendance.
During the event, township leaders provided updates on the district’s 2025 major construction projects, reaffirming their commitment to economic development. The first quarter alone saw the initiation of 29 major projects, with a total investment of 8.72 billion yuan ($1.2 billion), spanning sectors such as new materials, renewable energy, high-end equipment, and environmental protection.
Leapers Semiconductor SiC module project, which began construction on March 1, represents a 10 billion yuan ($1.4 billion) investment, covering an area of 32 acres. Once completed, the facility is expected to achieve an annual production capacity of 3 million automotive-grade SiC modules, generate 10 billion yuan ($1.4 billion) in annual revenue, and contribute 500 million yuan ($70 million) in annual tax revenue.
With this new SiC module packaging and testing facility, Leapers Semiconductor is set to enhance production capabilities, accelerate innovation, and drive the adoption of SiC power solutions worldwide.
Original – Leapers Semiconductor
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MCC Semi revealed the latest MOSFET designed to help engineers balance efficiency and thermal performance in high-power applications. The 150V MCTL4D0N15YH boasts a remarkably low on-resistance of 4mΩ, minimizing conduction losses for optimal efficiency.
Housed in a robust TOLL package, this component features advanced split-gate trench (SGT) technology and a junction-to-case thermal resistance of 0.39K/W for superior heat dissipation.
Equipped with an operating junction temperature capability of up to 175°C, this new MOSFET is the ideal solution for demanding applications, including battery management systems, motor drives, and DC-DC converters.
Offering versatility across multiple industries, MCTL4D0N15YH enhances system performance and longevity while reducing overall energy consumption.
Features & Benefits:
- SGT Technology: Ensures outstanding electrical performance and efficiency.
- Low On-Resistance (4mΩ): Minimizes power losses, enhancing system efficiency.
- Low Conduction Losses: Reduce energy waste, optimizing energy usage.
- Low Junction-to-Case Thermal Resistance (0.39K/W): Provides excellent heat dissipation capabilities.
- High Operating Junction Temperature (up to 175°C): Delivers reliability in high-temperature environments.
Original – Micro Commercial Components
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SemiQ Inc will give the first official unveiling of the company’s new 1700 V and 1200 V Gen 3 SiC MOSFETs at the 2025 Applied Power Electronics Conference (APEC).
APEC takes place at the Georgia World Congress Center in Atlanta from March 16, with SemiQ’s booth located at stand #1348.
SemiQ’s 1200 V Gen3 SiC was announced in February, delivering an improved performance with a smaller die size and at a lower cost. The series includes automotive qualified (AEC-Q101) options and Known Good Die (KGD) testing has been implemented across the series with verification at voltages exceeding 1400 V, plus avalanche testing to 800 mJ. Reliability is further improved through 100% gate-oxide burn-in screening and UIL testing of discrete packaged devices.
The company’s new 1700 V MOSFET family of MOSFETS and modules with AEC-Q101 certification is designed to meet the needs of medium-voltage high power conversion applications, from photovoltaic, wind inverters and energy storage to EV and roadside charging as well as uninterruptable power supplies, and induction heating/welding. These switching planar D-MOSFETs enable more compact system designs with higher power densities and have been tested to KGD beyond 1900 V, with UIL avalanche testing to 600 mJ.
Dr. Timothy Han, President at SemiQ said: “There is so much innovation happening in power electronics right now and we’re delighted to have launched our next generation technologies in time to have them on display at APEC. The show brings together many of the leading minds within the industry and we’re looking forward to discussing the challenges faced and how we can help them.”
Original – SemiQ
