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Infineon Technologies announced that its CoolSiC™ MOSFETs have been adopted in Toyota’s new bZ4X model. The silicon carbide devices are integrated in the vehicle’s on-board charger (OBC) and DC/DC converter, leveraging SiC’s low-loss performance, high thermal capability and high-voltage strength to help extend driving range and reduce charging time.
“We are very proud that Toyota, one of the world’s largest automakers, has chosen Infineon’s CoolSiC technology. Silicon carbide enhances the range, efficiency and performance of electric vehicles and is therefore a very important part of the future of mobility,” said Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon. He added that Infineon’s focus on innovation and zero-defect quality supports rising demand for power electronics in electromobility.
Infineon noted that CoolSiC MOSFETs use a trench gate structure that reduces normalized on-resistance and chip size, lowering both conduction and switching losses to improve overall efficiency in automotive power systems. Optimized parasitic capacitance and gate threshold voltage also enable unipolar gate drive, which can simplify drive circuitry in the electric drivetrain while supporting high-density, high-reliability OBC and DC/DC converter designs.
Original – Infineon Technologies
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RIR Power Electronics Limited introduced a new family of Silicon Carbide (SiC) Merged-PiN Schottky (MPS) diodes, advancing power device performance for electric vehicles, industrial power systems, and energy infrastructure. By combining Schottky and PiN structures in a single monolithic device, the SiC MPS architecture addresses long-standing trade-offs between efficiency, high-voltage blocking, and ruggedness, delivering real-world reliability at high power and temperature.
Positioned for the next phase of global electrification across transportation, renewables, data centers, and industrial infrastructure, the devices leverage SiC’s inherent advantages—higher operating voltages, faster switching, and superior thermal behavior—to boost power density while reducing system losses.
Key advantages
- High surge current capability for inrush, short-circuit, and grid-disturbance events
- Low leakage at elevated temperatures for stable, predictable operation
- Improved avalanche and blocking robustness for DC-link and grid-tied systems
- Near-zero reverse recovery for ultra-fast, low-loss switching
- Higher system reliability with reduced need for snubbers, over-design, and derating
Target applications
- EVs and HEVs (traction, OBC, DC-DC)
- Data centers and AI power infrastructure
- Renewable energy and grid systems
- Industrial drives and motion control
- Aerospace and defense platforms
- Green hydrogen and electrolysis systems
“With our new 1200 V SiC MPS diodes, RIR is making high-performance Silicon Carbide more accessible, reliable, and deployment-ready,” said Dr. Harshad Mehta, Non-Executive Chairman, RIR Power Electronics Ltd. “Backed by decades of high-power semiconductor expertise, we are enabling designers worldwide to harness the full potential of SiC—confidently and efficiently—across the most demanding applications, including EVs, data centers, renewables, industrial systems, aerospace, and green hydrogen.”
Original – RIR Power Electronics
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Wolfspeed, Inc. introduced its TOLT (TO-Leaded, Top-Side Cooled) package portfolio designed to deliver maximum power density for datacenter rack power supplies. By releasing heat from the top of the package, TOLT significantly improves cooling efficiency, enabling smaller, more reliable power systems that meet the rising demands of AI datacenters.
“AI is pushing datacenter OEMs to be incredibly strategic about the size and total efficiency of their power systems,” said Guy Moxey, vice president of Wolfspeed’s Industrial & Energy business. “Our TOLT product family offers a straightforward path to delivering higher-density, thermally optimized power systems capable of sustaining the demands of AI datacenters, and Wolfspeed’s Gen 4 technology helps these systems run cooler, more efficiently, and more reliably.”
Silicon carbide continues to outpace silicon in high-power applications, supporting gains in performance and system cost across AI datacenters, e-mobility, renewable energy, and battery energy storage. Wolfspeed’s U.S.-based silicon carbide substrate production underpins supply chain resilience and provides a stable domestic source for mission-critical power systems as large AI projects scale.
The initial 650 V TOLT products are available in multiple RDS(on) options, with additional details on Wolfspeed’s third top-side-cooled portfolio to follow in the second half of 2026.
Original – Wolfspeed
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Vishay Intertechnology, Inc. introduced five 1200 V MOSFET power modules built on its latest-generation silicon carbide (SiC) technology and housed in the fully insulated, compact SOT-227 package. The new Vishay Semiconductors devices—VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120—deliver best-in-class forward voltage drop down to 0.83 V to cut conduction losses and raise system efficiency.
Offered in single-switch and low-side chopper configurations, each module integrates a SiC MOSFET with a soft body diode to minimize reverse-recovery charge, reducing switching losses in medium- to high-frequency designs. Target applications include solar inverters; off-board EV chargers; SMPS, DC/DC converters, UPS and HVAC systems; large battery storage; and telecom power supplies.
The SOT-227 form factor enables drop-in replacement for competing modules without PCB changes. Its molded, fully insulated design provides electrical isolation up to 2500 V for one minute, which can lower system cost by eliminating separate insulation between the device and heatsink.
Key characteristics include continuous drain current ratings from 50 A to 200 A, low on-resistance down to 12.1 mΩ, high-speed switching with low capacitance, and a maximum operating junction temperature of +175 °C. The devices are RoHS-compliant and UL-approved (file E78996).
Device highlights:
- VS-SF50LA120 — 1200 V, 50 A, 43 mΩ, low-side chopper, SOT-227
- VS-SF50SA120 — 1200 V, 50 A, 47 mΩ, single switch, SOT-227
- VS-SF100SA120 — 1200 V, 100 A, 23 mΩ, single switch, SOT-227
- VS-SF150SA120 — 1200 V, 150 A, 16.8 mΩ, single switch, SOT-227
- VS-SF200SA120 — 1200 V, 200 A, 12.1 mΩ, single switch, SOT-227
Samples and production quantities are available now with 13-week lead times.
Original – Vishay Intertechnology
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Mitsubishi Electric Corporation will begin shipping samples on January 21 of four new trench silicon carbide MOSFET bare dies for power electronics equipment, including electric-vehicle traction inverters, onboard chargers, and power supplies for renewable energy such as solar. The new bare dies are designed to help embed advanced SiC devices directly into systems to lower power consumption while maintaining performance.
The devices will be showcased at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21–23, with additional exhibitions planned in North America, Europe, China, India and other regions.
Growing decarbonization efforts are expanding the market for high-efficiency power electronics. Demand is rising for power semiconductors that enable EV traction inverters and renewable-energy systems to cut losses while preserving performance and quality.
Since 2010, Mitsubishi Electric has shipped SiC power modules that reduce energy use in air conditioners, industrial equipment and railway inverters. To meet the shift toward advanced bare-die integration, the company is introducing four new trench SiC-MOSFET bare dies that leverage a proprietary trench structure to cut power loss by approximately 50% versus planar SiC-MOSFETs. Proprietary manufacturing, including Mitsubishi Electric’s gate oxide film process, suppresses variation in power loss and on-resistance, supporting stable, long-term quality.
Original – Mitsubishi Electric
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Wolfspeed, Inc. announced successful production of a single-crystal 300 mm (12-inch) silicon carbide wafer. Backed by one of the industry’s largest silicon carbide IP portfolios—more than 2,300 issued and pending patents worldwide—the company is pioneering the transition to 300 mm and setting a path toward future volume commercialization.
The advance represents a meaningful step for next-generation computing platforms, immersive AR/VR systems, and high-efficiency power devices. By extending silicon carbide to 300 mm, Wolfspeed is opening new performance thresholds and manufacturing scalability for demanding semiconductor applications.
“Producing a 300 mm single crystal silicon carbide wafer is a significant technology achievement and the result of years of focused innovation in crystal growth, boule and wafer processing,” said Elif Balkas, Chief Technology Officer at Wolfspeed. “It positions Wolfspeed to support the industry’s most transformative technologies, especially critical elements of the AI ecosystem, immersive augmented and virtual reality systems, and other advanced power device applications.”
Wolfspeed’s 300 mm platform is designed to unify high-volume silicon carbide manufacturing for power electronics with advanced capabilities in high-purity semi-insulating substrates used in optical and RF systems. This convergence enables a new class of wafer-scale integration across optical, photonic, thermal, and power domains.
As AI workloads drive data centers toward their power limits, the 300 mm silicon carbide platform will help integrate high-voltage power delivery, advanced thermal solutions, and active interconnects at wafer scale—pushing system performance beyond conventional transistor scaling. In AR/VR, silicon carbide’s material properties—including mechanical strength, thermal conductivity, and optical refractive control—support compact, lightweight architectures that pair high-brightness displays with effective thermal management.
Beyond AI and AR/VR, moving silicon carbide to 300 mm enhances the ability to scale production of advanced power devices for applications such as high-voltage grid transmission and next-generation industrial systems, improving economics and long-term supply assurance.
“This 300 mm breakthrough is more than a technical milestone—it unlocks new opportunities for silicon carbide as a strategic material,” said Poshun Chiu, Principal Analyst, Compound Semiconductor, Yole Group. “It clearly demonstrates that silicon carbide is advancing to the next level of manufacturing maturity required for the coming decade of electrification, digitalization, and AI, and provides the market with a credible roadmap toward higher-volume production, improved economics and long-term supply assurance.”
Original – Wolfspeed
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Fuji Electric Co., Ltd. announced an agreement with Robert Bosch GmbH (Bosch) to collaborate on silicon carbide (SiC) power semiconductor modules for electric vehicles featuring package compatibility. The partnership targets faster design cycles for automakers and greater flexibility in sourcing as EV adoption accelerates.
SiC devices are increasingly used in EV inverter systems for their high breakdown voltage and low loss, enabling smaller, lighter, and more efficient powertrains that extend driving range. Fuji Electric’s SiC modules leverage proprietary packaging to deliver high power density and efficiency, with flexible chip sizing and counts to meet a wide spectrum of power requirements and circuit configurations.
Under the collaboration, the companies plan to develop SiC modules with mechanical compatibility—aligned package outer dimensions and terminal positions—so either module can be integrated into an inverter without additional mechanical changes. This approach is intended to shorten design timelines and diversify procurement, allowing customers to use modules from both suppliers without altering inverter specifications.
Fuji Electric and Bosch also plan joint development of application technologies related to cooler design and terminal connections for SiC module integration, and will provide technical support to customers. The initiative aims to enhance supply chain stability and further promote the adoption of electric vehicles.
Original – Fuji Electric
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Wolfspeed Inc. announced that its automotive MOSFETs will power onboard charger systems for Toyota Battery Electric Vehicles. The adoption underscores Toyota’s confidence in Wolfspeed’s ability to meet stringent quality and long-term reliability requirements.
“Toyota is known for its uncompromising approach to quality and reliability, and we’re honored to be supporting their next wave of electrification,” said Robert Feurle, Chief Executive Officer. “Wolfspeed’s U.S.-based supply chain and domestic silicon carbide manufacturing footprint ensure the stability and continuity they need to achieve their electrification goals.”
Silicon carbide has become the industry standard for high-voltage onboard power systems as the automotive sector accelerates toward clean energy vehicles. Beyond enabling fast, efficient, high-power-density traction inverters, silicon carbide brings clear advantages to onboard automotive auxiliary power systems such as onboard chargers—supporting shorter charging times, reducing energy loss across the vehicle, improving driving range, and lowering recharge costs over the vehicle’s lifespan.
“Our work with Toyota is built upon years of trust in engineering expertise, supply reliability, as well as a shared obsession with quality,” said Cengiz Balkas, Chief Business Officer. “This reinforces our role in driving electrification with silicon carbide technology that delivers performance, efficiency and safety.”
Wolfspeed supports a broad range of EV platforms directly with OEMs and through Tier 1 partners, making its technology a foundational element of the expanding EV ecosystem.
Original – Wolfspeed
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Infineon Technologies AG introduced new package options for its CoolSiC™ MOSFET 750 V G2 technology, engineered to raise system efficiency and power density in automotive and industrial power conversion. The devices are available in Q-DPAK and D2PAK, with a portfolio offering typical RDS(on) values up to 60 mΩ at 25°C.
The extended lineup targets onboard chargers and HV-LV DCDC converters in automotive, as well as server and telecom SMPS and EV charging infrastructure on the industrial side. Ultra-low RDS(on) of 4 mΩ enables applications demanding exceptional static-switching performance, including eFuse, high-voltage battery disconnect switches, solid-state circuit breakers and solid-state relays—supporting more efficient, compact and reliable system designs.
A key differentiator is the top-side cooled Q-DPAK package, delivering optimal thermal performance and robustness for high-power use cases. The technology also achieves excellent RDS(on) × QOSS and best-in-class RDS(on) × Qfr, reducing switching losses in both hard- and soft-switching topologies and delivering superior efficiency in hard-switching conditions.
CoolSiC MOSFETs 750 V G2 combine a high threshold voltage VGS(th),typ of 4.5 V at 25°C with an ultra-low QGD/QGS ratio to reinforce robustness against parasitic turn-on (PTO). The platform supports extended gate-drive capability with static gate voltages down to -7 V and transient voltages down to -11 V, providing wider design margins and strong compatibility with other devices in the market.
Samples are available now: Q-DPAK in 4/7/20/33/40/50 mΩ and D2PAK in 7/25/33/40/50/60 mΩ.
Original – Infineon Technologies
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SemiQ Inc has broadened its third-generation QSiC™ MOSFET portfolio with seven new power modules that deliver industry-leading current density and thermal performance. The launch adds high-current S3 half-bridge, B2T1 six-pack and B3 full-bridge options engineered to raise system efficiency, simplify cooling, and cut switching losses in next-generation EV chargers, energy storage systems and industrial motor drives.
The expanded lineup targets the rising demand for ultra-efficient power conversion. In the standard 62 mm S3 half-bridge format, current capability reaches up to 608 A with junction-to-case thermal resistance as low as 0.07°C/W. The B2T1 six-pack modules integrate a complete three-phase power stage in a compact housing with RDS(on) values from 19.5 to 82 mΩ to streamline layout and minimize parasitics in motor drives and advanced AC-DC converters. The B3 full-bridge devices offer up to 120 A with on-resistance down to 8.6 mΩ and thermal resistance of 0.28°C/W, maximizing power density and efficiency for single-phase inverters and high-voltage DC-DC applications.
Quality and reliability measures include wafer-level gate-oxide burn-in to assure gate integrity and breakdown voltage testing beyond 1350 V. Built on SemiQ’s Gen3 SiC technology, the new modules operate at 18 V/-4.5 V gate drive and reduce both RONsp and turn-off energy (EOFF) by up to 30% versus prior generations.
Commenting on the release, Dr. Timothy Han said that EV infrastructure and new industrial applications demand ever-higher performance, and that the Gen3 full-bridge, half-bridge and six-pack modules—with higher current density and significantly lower on-resistance—are designed to meet those requirements.
Product list:
GCMX020A120B2T1P — Six-Pack, B2, 1200 V, 30 A, 19.5 mΩ
GCMX040A120B2T1P — Six-Pack, B2, 1200 V, 30 A, 39 mΩ
GCMX080A120B2T1P — Six-Pack, B2, 1200 V, 29 A, 82 mΩ
GCMX008B120B3H1P — Full-Bridge, B3, 1200 V, 120 A, 8.6 mΩ
GCMX016B120B3H1P — Full-Bridge, B3, 1200 V, 95 A, 16.6 mΩ
GCMX2P3B120S3B1-N — Half-Bridge, S3, 1200 V, 608 A, 2.4 mΩ
GCMX3P5B120S3B1-N — Half-Bridge, S3, 1200 V, 428 A, 3.6 mΩKey benefits:
• Higher power density through industry-leading current ratings and low RDS(on)
• Lower thermal resistance to ease cooling and reduce system size and cost
• Integrated topologies (six-pack, full-bridge, half-bridge) to simplify layout and minimize parasitics
• Up to 30% reduction in RONsp and EOFF compared to previous generations
• Robust screening, including wafer-level gate-oxide burn-in and >1350 V breakdown verificationAvailability details, reference designs and application notes can be aligned to specific EV charging, ESS and industrial drive requirements.
Original – SemiQ
