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ROHM has announced the adoption of its EcoSiC™ products, including SiC MOSFETs and SiC Schottky barrier diodes (SBDs) in the HFA/HCA series of 3.5kW output AC-DC power supply units for 3-phase applications from COSEL, a leading power supply manufacturer in Japan. Incorporating ROHM SiC MOSFETs and SiC SBDs into the forced air-cooled HFA series and conduction-cooled HCA series achieves up to 94% efficiency. The HCA series has been mass produced since 2023, while the HFA series began mass production in 2024.
Many industrial applications that handle high power in the industrial sector, including MRI machines and CO2 lasers, require 3-phase power supplies that differ from the single-phase power supplies used in households. COSEL’s AC-DC power supply units – equipped with ROHM’s EcoSiC™ technology that excels in high-temperature, high-frequency, high-voltage environments – are compatible with 3-phase power supplies from 200VAC to 480VAC, contributing to improved power supply efficiency across a wide range of industrial equipment worldwide.
Jun Uchida, General Manager, New Product Development Dept. 2, COSEL Co., Ltd.
“The HFA/HCA series achieve high efficiency despite delivering a high-power output of 3.5kW by incorporating ROHM’s low-loss SiC power devices. Operating at high input voltages typically poses a challenge in reducing losses in high-voltage power devices, but using SiC power devices translates to significantly lower losses compared to conventional solutions, resulting in power supplies that maintains high efficiency and power density even under demanding high-power conditions.”
Akihiro Hikasa, Group General Manager, Power Devices Business Unit, SiC Business Section, ROHM Co., Ltd.
“We are delighted to support COSEL, an industry leader in power supply systems, by providing SiC power devices. A leading company in SiC power devices, ROHM also provides comprehensive power solutions that combine peripheral components. In addition, by addressing customer issues, we also improve device performance by incorporating the insights gained into our products. Going forward, we will continue to collaborate with COSEL to contribute to a sustainable society by enhancing the efficiency of industrial equipment that handle large amounts of power.”
The HFA/HCA series are 3.5kW power supplies featuring a wide input range (200VAC to 480VAC) that meets global power supply requirements. This allows them to be used anywhere in the world without the need to modify the power supply for each region, contributing to the standardization of application designs. Both forced air-cooled (HFA series) and conduction-cooled (HCA series) models – selectable based on operating environment – are available in 48V and 65V output voltage variants that can be used as power sources for a variety of high-power applications such as laser generation and MRI.
Original – ROHM
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GlobalFoundries has received an additional $9.5 million in federal funding from the U.S. government to advance the manufacturing of GF’s essential gallium nitride (GaN) on silicon semiconductors at its facility in Essex Junction, Vermont.
The funding moves GF closer to large-scale production of GaN chips. With the ability to handle high voltages and temperatures, GaN chip technology is essential for enabling higher performance and greater energy efficiency across a range of RF and high-power control applications including automobiles, datacenter, IoT, aerospace and defense.
With the award, GF will continue to add new tools, equipment and prototyping capabilities to its market-leading GaN IP portfolio and reliability testing as the company moves closer to full-scale manufacturing of its 200mm GaN chips in Vermont. GF is committed to creating a fast and efficient path for customers to realize new innovative designs and products that leverage the unique efficiency and power management benefits of GaN chip technology.
“GF is proud of its leadership in GaN chip technology, which is positioned to make game-changing advances across multiple end-markets and enable new generations of devices with more energy-efficient RF performance and faster-charging, longer-lasting batteries,” said Nicholas Sergeant, vice president of IoT and aerospace and defense at GF. “We appreciate the U.S. government’s partnership and ongoing support of our GaN program. Realizing full-scale GaN chip manufacturing will be a catalyst for innovation, for both our commercial and government partners, and will add resilience and strengthen the semiconductor supply chain.”
The new funding, awarded by the U.S. Department of Defense’s Trusted Access Program Office (TAPO), represents the latest federal investment to support GF’s GaN program in Vermont.
“This strategic investment in critical technologies strengthens our domestic ecosystem and national security, and ensures these assets are readily available and secure for DoD utilization. In concert with key partners, this approach fortifies defense systems, empowering resilience and responsiveness,” said Dr. Nicholas Martin, Director at Defense Microelectronics Activity.
In total, including the new award, GF has received more than $80 million since 2020 from the U.S. government to support research, development and advancements to pave the way to full-scale GaN chip manufacturing.
Vermont is a U.S.-accredited Trusted Foundry and the global hub of GF’s GaN program, with longstanding leadership in 200mm semiconductor manufacturing. In July 2024, GF acquired Tagore Technology’s Gallium Nitride Power portfolio and created the GF Kolkata Power Center in Kolkata, India. The center is closely aligned with and supports GF’s facility in Vermont, and is helping advance GF’s research, development and leadership in GaN chip manufacturing.
Original – GlobalFoundries
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Ampere, the intelligent electric vehicle pure player born from Renault Group and STMicroelectronics announced the next step in their strategic co-operation, starting in 2026, with a multi-year agreement between STMicroelectronics and Renault Group on the supply of Silicon Carbide (SiC) power modules, as part of their collaboration on a powerbox for the inverter for Ampere’s ultra-efficient electric powertrain.
Ampere and STMicroelectronics worked together on the optimization of the power module, the key element in the powerbox, to get the highest performance and best competitiveness in the e-powertrain, leveraging Ampere’s expertise in EV technology and STMicroelectronics’ expertise in advanced power electronics.
“This agreement is the result of the intensive work carried out with STMicroelectronics. By working upstream together, we were able to optimize and secure the supply of key components for our electric powertrains, to offer high performance EVs with increased range and optimized charging time. It perfectly aligns with Ampere’s strategy to master the entire value chain of power electronics for its e-powertrain, leveraging STMicroelectronics’ expertise in power modules,” said Philippe Brunet, SVP Powertrain & EV engineering, Ampere.
“ST is at the cutting edge of the development of advanced power electronics enabling the mobility industry to improve the performance of electrified platforms. With the optimization of these higher-efficient products and solutions to meet Ampere’s performance requirements, and our vertically integrated silicon carbide supply chain, we are supporting Ampere’s strategy for its next generation of electric powertrain,” said Michael Anfang, Executive Vice President Sales & Marketing, Europe, Middle East and Africa Region, STMicroelectronics. “ST and Ampere share a common vision for more sustainable mobility and this agreement marks another step forward in improved power performance to further contribute to concrete improvements to carbon emissions reduction by the mobility industry and its supply chain.”
Power modules, composed of numerous silicon carbide chips, manage and convert electrical power from the battery to drive the electric motor. They play a crucial role in the efficiency of the electric powertrain and battery range, as well as energy regeneration features, making them a key element of the efficiency of an electric car. They also contribute to the smoothness and responsiveness of driving.
STMicroelectronics and Ampere have collaborated on a powerbox for the supply of energy to Ampere’s new generation of electric motors. The powerbox is designed for optimum performance-size ratio across Ampere’s line-up, on 400 Volt battery EV vehicles and for Segment C-EVs with 800 Volt batteries, enabling greater autonomy and faster charging. 800 Volts is one of the key levers to achieve the 10%-80% quick charge in 15 minutes or less. This agreement is fully aligned with Ampere’s strategy to master the entire value chain of the electric vehicle, particularly by working further upstream with its partners and ensuring the best efficiency at each step.
As an integrated device manufacturer (IDM), STMicroelectronics ensures quality and security of supply to serve carmakers’ strategies for electrification. The collaboration with Ampere on the silicon carbide power modules and powerbox demonstrates STMicroelectronics’ leadership and system level experience of advanced power electronics, including its packaging expertise.
Original – Ampere
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Power Master Semiconductor has announced the expansion of its e SiC MOSFET family with introduction of new AEC-Q101 qualified, high-performance top-side cooling packages. These include the TSPAK DBC version and LF version, specially designed for automotive and industrial applications.
The TSPAK offers superior thermal performance, high efficiency, power density and reliability, making it ideal for a variety of automotive applications such as on-board chargers (OBCs), DC-DC converters, and e-compressors. This innovative packaging leverages Power Master Semiconductor’s latest generation of 1200V eSiC MOSFET (Gen2), employing cutting-edge technology to decouple a trade-off between specific on-resistance (Rsp) and short-circuit withstand time (SCWT). Compared to the previous generation, the new 1200V eSiC MOSFETs deliver 20% reduction in RDS(ON) and a 15% improvement in SCWT, as well as a 45% reduction in switching losses.
Key Features and Benefits of TSPAK
TSPAK LF version
- Top-side cooling package with an exposed drain at the surface, allowing direct heat dissipation to the heatsink.
- Offers superior thermal performance and supports high current capabilities.
- High temperature capability : Tj (max)= 175°C
TSPAK DBC version
- Integrates an isolated DBC ceramic pad on the surface, providing premium thermal performance and enhanced design flexibility.
- Features 3.6kV isolation voltage, extended creepage distance (5.23mm), and flexible mounting by directly connected to an external heatsink with thermal grease.
- High temperature capability : Tj (max)= 175°C
With an industry-standard footprint of 14mm x 18.58mm, the TSPAK packages provide superior thermal performance and Kelvin source configuration to minimizes gate noise and reduces turn-on losses by 60%, enabling higher-frequency operation and improved power density.
The PCR120N40M2A (LF version) and PCRZ120N40M2A (DBC version) are automotive-grade 1200V/40mΩ eSiC MOSFETs in TSPAK packages, leveraging Power Master Semiconductor’s 2nd-generation eSiC MOSFET technology to deliver optimized performance for the automotive systems.
- E-compressors, vital for efficient thermal management, extended battery life, enhanced charging efficiency, and improved driving range.
- Totem-Pole PFC and CLLC/DAB (Dual Active Bridge) topologies, essential for bidirectional power conversion in 800V battery systems used in electric vehicles.
“Cooling is one of the greatest challenges in high power design and successfully addressing it is the key enabler to reducing size and weight, which is critical in modern automotive design” said Namjin Kim, Senior Director of Sales & Marketing. “Our new top-side cooling package offer better system efficiency and minimize heat thermal path on the PCB, the system design will be simplified and compacted. We are confident that this innovative solution will be the optimal choice for high-performance automotive applications.”
“Efficient cooling is a critical challenge for reducing size and weight of high-power automotive systems,” said Namjin Kim, Senior Director of Sales & Marketing. “Our new top-side cooling package enhances system efficiency and minimizes the thermal path on the PCB, enabling simpler, more compact system designs. We believe this innovative solution will drive the high performance automotive applications.”
Original – Power Master Semiconductor
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DENSO Corporation and Fuji Electric Co., Ltd. announced that a semiconductor supply plan submitted jointly by the companies has been approved by the Ministry of Economy, Trade and Industry. Under this plan, the companies will take part in joint investment and production of silicon carbide (SiC) power semiconductors to develop and strengthen frameworks for the supply of said semiconductors.
Power semiconductors are vital to the efficient supply of electric power. Demand for power semiconductors has been rising rapidly given that they are used in electrified vehicles, which are being adopted at an accelerated pace amid the push for the decarbonization of society. In comparison to prior silicon semiconductors, SiC power semiconductors are able to deliver superior performance under high temperature, high-frequency, and high-voltage conditions.
These devices are therefore anticipated to make large contributions to reductions in power loses as well as to more compact and lighter-weight designs for battery electric vehicle systems and other power electronics. Accordingly, growth in demand is projected for SiC power semiconductors.
In response to electrification trends, DENSO has advanced SiC technology development projects targeting increased quality and efficiency in relation to everything from wafers and element devices to modules and inverters. Meanwhile, Fuji Electric has constructed extensive frameworks encompassing all tasks spanning from the development of SiC power semiconductor elements that enable increased efficiency and more compact designs for power electronics equipment to mass production of the related modules.
Based on the approved plan, these companies will combine their respective automotive product development and production technology capabilities in a joint effort to expand their capacity for the efficient and stable supply of SiC power semiconductors throughout Japan.
Through this partnership, the companies will contribute to the development of semiconductor supply frameworks within Japan and to the improvement of the international competitiveness of Japan’s domestic semiconductor and automotive industries. In addition, this partnership is anticipated to help advance the decarbonization of society.
Original – Fuji Electric
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Toshiba Electronics Europe GmbH has developed new 1200V silicon carbide (SiC) MOSFETs with low on-resistance (RDS(ON)) and high levels of reliability. The devices are particularly suited to applications within automotive traction inverters. They are now available and shipping as early test samples in bare die format – allowing customers to customise them to meet the needs of their applications.
The new X5M007E120 uses a manufacturing process that reduces on-resistance per unit area by up to 30%. Unlike existing methods that utilise a striped-pattern construction, the new devices arrange the embedded Schottky barrier diodes (SBDs) in a check-pattern to achieve lower on-resistance.
Many SiC MOSFETs increase on-resistance as body diodes are energised during reverse conduction, which can lead to reliability issues. Toshiba SiC MOSFETs alleviate this issue by preventing body diodes from operating as SBDs are embedded into the MOSFETs. This approach maintains the reduction in on-resistance while ensuring reliability during reverse conduction.
With electric motors consuming over 40% of the world’s electrical energy, efficient operation is essential to sustainability. The re-arrangement of SBDs in this device has suppressed body diode energisation, and the upper limit of unipolar operation has increased to around double without increasing the SBD mounting area. Additionally, channel density is improved. These enhancements contribute to energy efficiency in applications, including motor control inverters.
Reducing RDS(ON) within a SiC MOSFET can cause excess current flow during short-circuit operations. By adopting a deep barrier structure, the X5M007E120 reduces excessive current within the MOSFET section and leakage current in the SBDs section during short-circuit operation. This enables durability during short-circuit conditions while maintaining high levels of reliability against reverse conduction operation.
The new X5M007E120 has a VDSS of 1200V and is rated for a drain current (ID) of 229A continuously, with 458A for pulsed operation (ID Pulse). RDS(ON) is as low as 7.2mΩ, and the device can operate with channel temperatures (Tch) as high as 175°C. The devices are AEC-Q100 qualified for automotive applications.
Engineering samples of the new X5M007E120 are expected to ship during 2025, with mass production samples scheduled to start in 2026.
Toshiba will continue to seek ways to further improve the characteristics of its products. The company will contribute to realising a decarbonised society by providing customers with power semiconductors for applications where energy efficiency is essential, such as inverters for motor control and power control systems for electrical vehicles.
Original – Toshiba
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Mitsubishi Electric Corporation announced that it will begin shipping samples of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) bare die for use in drive-motor inverters of electric vehicles (EVs), plug-in hybrid vehicles (PHEVs) and other electric vehicles (xEVs) on November 14.
Mitsubishi Electric’s first standard-specification SiC-MOSFET power semiconductor chip will enable the company to respond to the diversification of inverters for xEVs and contribute to the growing popularity of these vehicles. The new SiC-MOSFET bare die for xEVs combines a proprietary chip structure and manufacturing technologies to contribute to decarbonization by enhancing inverter performance, extending driving range and improving energy efficiency in xEVs.
Mitsubishi Electric’s new power semiconductor chip is a proprietary trench SiC-MOSFET that reduces power loss by about 50% compared to conventional planar SiC-MOSFETs. Thanks to proprietary manufacturing technologies, such as a gate oxide film process that suppresses fluctuations in power loss and on-resistance, the new chip achieves long-term stability to contribute to inverter durability and xEV performance.
Original – Mitsubishi Electric
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Cambridge GaN Devices (CGD) and IFP Energies nouvelles (IFPEN), a major French public research and training organization in the fields of energy, transport and the environment, have developed a demo which confirms the suitability of CGD’s ICeGaN®650 V GaN ICs in a multi-level, 800 VDC inverter.
The demo delivers super-high power density – 30 kW/l – which is greater than can be achieved by more expensive, state-of-the-art silicon-carbide (SiC)-based devices. The inverter realization also demonstrates the ease of paralleling that ICeGaN technology enables; each inverter node has three 25mΩ / 650V ICeGaN ICs – 36 devices in total – in parallel.
ANDREA BRICCONI | CHIEF MARKETING OFFICER, CGD
“We are super excited at this first result of our partnership with IFPEN. 800 VDC supports the 800 V bus which is being increasingly adopted by the EV industry. By addressing automotive and other high voltage inverter applications with energy-efficient ICeGaN-based solutions we are delivering on CGD’s key commitment – sustainability.”This multi-level GaN Inverters can power electric motors to over 100 kW peak, 75 kW continuous power. The CGD/IFPEN demo features: a high voltage input of up to 800Vdc; 3-phase output; a peak current of 125 Arms (10s) (180 Apk); and a continuous current of 85 Arms continuous (120 Apk).
The ICeGaN multi-level design proposed by IFPEN reveals several compelling benefits:
- Increased Efficiency: the improvement in the efficiency of the traction inverter leads to an increase in battery range and a reduction in charging cycles. It also leads to a reduction in battery cost if the initial range (iso-range) is maintained
- Higher switching frequencies: GaN transistors can operate at much higher frequencies than silicon transistors. This reduces iron losses in the motor, particularly in the case of machines with low inductances
- Reduced Electromagnetic Interferences: 3-level topology minimizes EMI and enhances the reliability of the system
- Enhanced thermal management: insulated metallized substrate boards featuring an aluminium core facilitate superior thermal dissipation, ensuring optimal operating temperatures and extending the lifespan of the system and associated GaN devices
- Modular design: this facilitates scalability and adaptability for varying system requirements.
GAETANO DE PAOLA | PROGRAM MANAGER, IFPEN
“Following the implementation of this inverter reference using CGD’s enabling ICeGaN ICs coupled with innovative topologies, such as multi-level solutions, IFPEN now strongly believes that GaN is a breakthrough technology in terms of performance and cost for high-voltage traction inverters.”Original – Cambridge GaN Devices
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ROHM has developed surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models – SCS2xxxNHR – for automotive applications such as onboard chargers (OBCs), with plans to deploy eight models – SCS2xxxN – for industrial equipment such as FA devices and PV inverters in December 2024.
The rapidly expanding xEV market is driving the demand for power semiconductors, among them SiC SBDs, that provide low heat generation along with high-speed switching and high-voltage capabilities in applications such as onboard chargers. Additionally, manufacturers increasingly rely on compact surface mount devices (SMDs) compatible with automated assembly equipment to boost manufacturing efficiency. Compact SMDs tend to typically feature smaller creepage distances, fact that makes high-voltage tracking prevention a critical design challenge.
As leading SiC supplier, ROHM has been working to develop high-performance SiC SBDs that offer breakdown voltages suitable for high-voltage applications with ease of mounting. Adopting an optimized package shape, it achieves a minimum creepage distance of 5.1mm, improving insulation performance when contrasted with standard products.
The new products utilize an original design that removes the center pin previously located at the bottom of the package, extending the creepage distance to a minimum of 5.1mm, approx. 1.3 times greater than standard products. This minimizes the possibility of tracking (creepage discharge) between terminals, eliminating the need for insulation treatment through resin potting when surface mounting the device on circuit boards in high voltage applications. Additionally, the devices can be mounted on the same land pattern as standard and conventional TO-263 package products, allowing an easy replacement on existing circuit boards.
Two voltage ratings are offered, 650V and 1200V, supporting 400V systems commonly used in xEVs as well as higher voltage systems expected to gain wider adoption in the future. The automotive-grade SCS2xxxNHR are AEC-Q101 qualified, ensuring they meet the high reliability standards this application sector demands.
Going forward, ROHM will continue to develop high-voltage SBDs using SiC, contributing to low energy consumption and high efficiency requirements in automotive and industrial equipment by providing optimal power devices that meet market needs.
Original – ROHM
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Cambridge GaN Devices (CGD) and Qorvo® have partnered to bring together industry-leading motor control and power efficiency technologies in the PAC5556A + ICeGaN® evaluation kit (EVK). This collaboration combines Qorvo’s high-performance BLDC/PMSM motor controller/driver and CGD’s easy-to-use ICeGaN ICs in a board that significantly improves motor control applications.
ANDREA BRICCONI | CHIEF MARKETING OFFICER, CGD
“By combining industry-leading solutions from our two technology-strong companies in this EVK, we are enabling the development of compact, energy-efficient systems with high power density. Unlike other GaN implementations, ICeGaN technology easily interfaces with Qorvo’s PAC5556A motor control IC for seamless high performance in BLDC and PMSM applications.”JEFF STRANG | GENERAL MANAGER, POWER MANAGEMENT BUSINESS UNIT, QORVO
“Wide-bandgap semiconductors like GaN and SiC are being integrated into motor control applications for the power density and efficiency advantages they offer. CGD’s ICeGaN technology delivers ease of use and reliability – two critical factors for motor control and drive designers. Customers are responding enthusiastically when they experience the power of GaN combined with our highly integrated PAC5556A 600V BLDC motor control solution.”By employing CGD’s latest-generation P2 ICs, the PAC5556AEVK2 evaluation kit with 240 mΩ ICeGaN achieves up to 400W peak performance without a heatsink, whilst the PAC5556AEVK3 with 55 mΩ ICeGaN hits 800W peak with minimal airflow cooling.
ICeGaN’s efficiency gains result in reduced power loss, increased power availability, and minimized heat dissipation, enabling smaller and more reliable systems. Because ICeGaN integrates essential current sense and Miller clamp elements, gate driver design is simplified and BOM costs are reduced. This makes the solution easy to implement and price-competitive, as well as high performance.
The PAC5556A + CGD GaN EVKs offer higher torque at low speeds and precise control, making them ideal for white goods, ceiling fans, refrigerators, compressors and pumps. Target markets include industrial and home automation, especially where compact, high-efficiency motor control systems are required. PAC5556AEVK2 and PAC5556AEVK3 are now available to order at Qorvo’s website.
Original – Cambridge GaN Devices
