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Vishay Intertechnology, Inc. announced that at the Applied Power Electronics Conference and Exposition (APEC) 2024, the company is showcasing its broad portfolio of passive and semiconductor solutions that address the latest trends in power electronics — from energy harvesting, electric vehicle (EV) powertrains, and mass commercialization to efficient and effective power electronics for power tools and switching regulators that shorten the iterative design cycle.
Taking center stage in booth 1607 will be Vishay’s newly released 1200 V MaxSiC™ series silicon carbide (SiC) MOSFETs, which deliver on-resistances of 40, 80 and 250 mΩ in standard packages for industrial applications, with custom products also available. In addition, Vishay will provide a roadmap for 650 V to 1700 V SiC MOSFETs with on-resistances ranging from 12 mΩ to 1 Ω.
Vishay’s SiC platform is based on a proprietary MOSFET technology — enabled through the company’s recent acquisition of MaxPower Semiconductor, Inc. — which will address market demands in traction inverter, photovoltaic energy storage, on-board charger, and charging station applications. At the booth, Vishay’s experts will also be discussing upcoming planned releases of the MaxSiC platform, including AEC-Q101 Automotive Grade products.
At APEC 2024, Vishay will also be offering a variety of product-focused demonstrations highlighting IHPT haptic actuators; the THJP ThermaWick® Thermal Jumper; the pulse performance of MELF, CRCW / CRCW-HP thick film, and MCS, MCU, and MCW thin film chip resistors; and the thermal capabilities of the PCAN and RCP high power thin and thick film resistors. In addition, application-focused demonstrations will include:
- An 800 V SiC MOSFET heat pump with a 100 % Vishay BOM
- A high voltage intelligent battery shunt for 400 V and 800 V batteries
- A six-phase DC/DC converter for mild hybrid vehicles with 48 V boardnets that provides power to 12 V loads up to 3 kW with high efficiency to 97 %
- A semiconductor-based, resettable eFuse for 800 V electric vehicle systems
Additional Vishay passive components on display at APEC 2024 will include the IHDM series of high current, edge-wound through hole inductors with continuous operation to +180 °C; hybrid planar and integrated transformers; wireless charging coils; NTC thermistors and PTC thermistors, including the PTCEL series capable of handling energy absorption up to 240 J; high power wirewound, thin film, and thick film resistors, including the anti-surge RCS with power to 0.5 W in the 0805 case size; high voltage thick film resistors and dividers; high voltage aluminum, ceramic, and power electronic capacitors (PEC); high energy tantalum capacitors; and robust metallized polypropylene film capacitors, including the MKP1848e DC-Link capacitor with high temperature operation to +125 °C.
Highlighted Vishay semiconductor solutions will consist of the SiC967 high voltage synchronous buck regulator with integrated power MOSFETs and inductors; 400 V, 600 V, and 1200 V standard rectifiers in SlimDPAK 2L and SMPD 2L packages with high creepage distance; 650 V and 1200 V SiC Schottky diodes up to 12 A in eSMP® series and power packages for AC/DC power factor correction (PFC) and ultra high frequency output rectification; and transient voltage suppressors (TVS).
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Vishay Intertechnology, Inc. introduced five new half-bridge IGBT power modules in the newly redesigned INT-A-PAK package. Built on Vishay’s Trench IGBT technology, the VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N, and VS-GT200TS065N offer designers a choice of two best in class technologies — low VCE(ON) or low Eoff — to lower conduction or switching losses in high current inverter stages for transportation, energy, and industrial applications.
The half-bridge devices released today combine Trench IGBTs — which deliver improved power savings versus other devices on the market — with Gen IV FRED Pt® anti-parallel diodes with ultra soft reverse recovery characteristics. Offering a new gate pin orientation, the modules’ compact INT-A-PAK package is now 100 % compatible with the 34 mm industry-standard package to offer a mechanical drop-in replacement.
The industrial-level devices will be used in power supply inverters for railway equipment; energy generation, distribution, and storage systems; welding equipment; motor drives; and robotics. To reduce conduction losses in output stages for TIG welding machines, the VS-GT100TS065S, VS-GT150TS065S, and VS-GT200TS065S offer an industry-low collector to emitter voltage of ≤ 1.07 V at +125 °C and rated current. For high frequency power applications, the VS-GT100TS065N and VS-GT200TS065N offer extremely low switching losses, with Eoff down to 1.0 mJ at +125 °C and rated current.
The RoHS-compliant modules feature 650 V collector to emitter voltages, continuous collector current from 100 A to 200 A, and very low junction to case thermal resistance. UL-approved file E78996, the devices can be directly mounted to heatsinks and offer low EMI to reduce snubbing requirements.
Device Specification Table:
Part # VCES IC VCE(ON) Eoff Speed Package @ IC and +125 °C VS-GT100TS065S 650 V 100 A 1.02 V 6.5 mJ DC to 1 kHz INT-A-PAK VS-GT150TS065S 650 V 150 A 1.05 V 10.3 mJ DC to 1 kHz INT-A-PAK VS-GT200TS065S 650 V 200 A 1.07 V 13.7 mJ DC to 1 kHz INT-A-PAK VS-GT100TS065N 650 V 100 A 2.12 V 1.0 mJ 8 kHz to 30 kHz INT-A-PAK VS-GT200TS065N 650 V 200 A 2.13 V 3.86 mJ 8 kHz to 30 kHz INT-A-PAK Original – Vishay Intertechnology
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Vishay Intertechnology, Inc. introduced a versatile new 30 V n-channel TrenchFET® Gen V power MOSFET that delivers increased power density and enhanced thermal performance for industrial, computer, consumer, and telecom applications.
Featuring source flip technology in the 3.3 mm by 3.3 mm PowerPAK® 1212-F package, the Vishay Siliconix SiSD5300DN provides best in class on-resistance of 0.71 mΩ at 10 V and on-resistance times gate charge — a critical figure of merit (FOM) for MOSFETs used in switching applications — of 42 mΩ*nC.
Occupying the same footprint as the PowerPAK 1212-8S, the device released today offers 18 % lower on-resistance to increase power density, while its source flip technology reduces thermal resistance by 63 °C/W to 56 °C/W. In addition, the SiSD5300DN’s FOM represents a 35 % improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications.
PowerPAK1212-F source flip technology reverses the usual proportions of the ground and source pads, extending the area of the ground pad to provide a more efficient thermal dissipation path and thus promoting cooler operation. At the same time, the PowerPAK 1212-F minimizes the extent of the switching area, which helps to reduce the impact of trace noise.
In the PowerPAK 1212-F package specifically, the source pad dimension increases by a factor of 10, from 0.36 mm2 to 4.13 mm2, enabling a commensurate improvement in thermal performance. The PowerPAK1212-F’s center gate design also simplifies parallelization of multiple devices on a single-layer PCB.
The source flip PowerPAK1212-F package of the SiSD5300DN is especially suitable for applications such as secondary rectification, active clamp battery management systems (BMS), buck and BLDC converters, OR-ing FETs, motor drives, and load switches. Typical end products include welding equipment and power tools; servers, edge devices, supercomputers, and tablets; lawnmowers and cleaning robots; and radio base stations.
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Vishay Intertechnology, Inc. announced the appointment of Mr. John Malvisi to its Board of Directors and its Audit Committee.
Mr. Malvisi retired in 2021 as a senior partner in Deloitte & Touche LLP’s audit practice with more than 35 years of client service experience. During his career, Mr. Malvisi has managed several of Deloitte’s largest audit clients in the media & entertainment, and consumer products industries. He also spent several years in the firm’s Merger & Acquisition Services Group and National Office.
Mr. Malvisi worked in Deloitte’s National Office Assurance Insights & Analysis Group and Accounting Research Group, where his responsibilities included quality and risk control and consultation on a wide range of accounting and financial reporting issues. He is a graduate of Fordham University, where he received an MBA in public accounting. Mr. Malvisi also served on the Board of Trustees for Catholic Charities of the Archdiocese of New York from 2008 through 2022, including its Audit Committee.
Marc Zandman, Executive Chairman of the Board, said of the appointment, “John’s extensive experience and leadership in the accounting and auditing profession, as well as his M&A background and experience in corporate governance matters, bring important perspectives to the Board of Directors. We welcome him to the Board and look forward to his contributions, expertise and insights to Vishay’s strategic direction and growth plans.”
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Vishay Intertechnology announced results for the fiscal third quarter ended September 30, 2023.
Highlights
- 3Q 2023 revenues of $853.7 million
- 3Q 2023 EPS of $0.47; adjusted EPS of $0.60
- 3Q 2023 book-to-bill of 0.63
- Backlog at quarter end was 5.5 months
- Returned a total of $31.1 million to stockholders
“During the third quarter, as expected, revenue decreased from the second quarter on inventory adjustments by our distribution and EMS customers in response to softened demand in industrial markets and contracting lead times. Nevertheless, we once again intentionally increased inventory with our distribution partners as we continued to execute our strategy of broadening our participation in this higher margin channel.
The capacity readiness activities we have underway are increasing our value to the distribution channel and reliably supporting our accelerating design activities related to the megatrends of e-mobility, sustainability and connectivity,” said Joel Smejkal, President and Chief Executive Officer. “In addition, as announced separately today, we have signed a purchase agreement to acquire Newport wafer fab which will accelerate our plan to scale manufacturing and advance the technology differentiation of our silicon carbide MOSFETs.”
4Q 2023 Outlook
For the fourth quarter of 2023, management expects revenues in the range of $770 million and $810 million and a gross profit margin in the range of 25.5% +/- 50 basis points.
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Vishay Intertechnology, Inc. and Nexperia B.V. announced that they have entered into an agreement that Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for $177million in cash. ATREG, Inc., the Seattle-based premier global firm for initiating, brokering, and executing the exchange of semiconductor manufacturing assets, served as Nexperia’s transaction advisors.
Newport wafer fab, located on 28 acres, is an automotive certified, 200mm semiconductor wafer fab that supplies primarily automotive markets. It is the largest semiconductor manufacturer in the U.K.
Toni Versluijs, Country Manager Nexperia UK, stated: “Nexperia would have preferred to continue the long-term strategy it implemented when it acquired the investment-starved fab in 2021 and provided for massive investments in equipment and personnel. However, these investment plans have been cut short by the unexpected and wrongful divestment order made by the UK Government in November 2022.The site needs clarity about its future to avoid further losses, and today’s announcement provides this. Of all options, this agreement with Vishay is the most viable one to secure the future of the site as Vishay – like Nexperia – has a solid customer base for the fab’s capabilities. For the site, Vishay’s commitment to further make the Newport wafer fab a success story is encouraging. Nexperia’s position with regards to the UK Government’s order remains unchanged.”
The closing of Newport wafer fab transaction is subject to UK government review, the purchase rights of a third party, and customary closing conditions, and is expected to occur in the first quarter of 2024.
Nexperia’s priority always remains with our employees and our customers. Whilst we work on ensuring that all conditions to the sale are met soonest, we will continue to own and manage the site and support the employees as usual.
Original – Nexperia
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Key Foundry signed a long-term supply agreement with Vishay Intertechnology Inc. for multiple power MOSFET products.
Power MOSFETs are the typical power discrete device, characterized by low loss, high-speed switching, and high reliability during high-voltage, high-current operation, which are commonly used in almost every electronic device.
According to a market research firm OMDIA, the power discrete market is expected to grow at a CAGR of 6% from $21.2 billion in 2022, reaching a $28.4 billion market in 2027. Vishay is one of the global leading companies in the power discrete market, and its power semiconductors are widely applied to automotive DC-DC converters, battery management systems, HVAC (Heating, Ventilating, and Air Conditioning) control, LED lighting, as well as consumer and industrial products such as TVs, refrigerators, washing machines, and VR/AR.
Key Foundry and Vishay have signed this long-term foundry service agreement for multiple power MOSFET products, with a plan to start mass production in 2024. In addition, both parties have begun discussions for other future product development.
With this agreement, Vishay secures a reliable source of foundry services for MOSFET production, while Key Foundry engages with a large customer for automotive power discrete, which will increase its share of automotive semiconductor sales in the long term.
“With this agreement we are taking another step forward in our plan to expand capacity, both internally and externally. In particular, it will help us alleviate our current MOSFET supply constraints especially for our automotive and industrial customers,” said Joel Smejkal, President and CEO of Vishay. “In evaluating foundry partners, we decided to engage with Key Foundry because of its foundry’s capabilities and proactive response, and we look forward to the synergies we can achieve through cooperation with Key Foundry.”
“We are pleased to collaborate with Vishay, a leading automotive power semiconductor company,” said Derek D. Lee, CEO of Key Foundry. “Key Foundry will continue to improve process technologies as well as strengthen capabilities in marketing, quality, and production to expand supply of automotive semiconductors and grow into a leading specialty foundry.”
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Vishay Intertechnology, Inc. announced that it has been honored by DENSO Corporation, a leading mobility supplier, with a 2022 Collaboration Award.
The 2022 Collaboration Awards recognize suppliers that have continued to provide DENSO with key components that keep production lines moving for the company and its customers, despite the tight supply market. Previously this year, Vishay was also recognized by DENSO with a 2022 North America Business Partner of the Year Award in the Quality Leader category.
“Vishay has demonstrated a strong commitment to supporting DENSO on both a working and management level,” said Kouji Arima, CEO of DENSO. “We sincerely appreciate the company’s unsparing efforts and contributions, and know we can count on them regardless of the market situation. We look forward to building an even stronger partnership with Vishay as we continue working together.”
“We are deeply honored to receive this acknowledgment from DENSO of our unwavering support during challenging market conditions,” said Joel Smejkal, President and CEO at Vishay. “This recognition underscores our commitment to operational excellence and the strength of our partnership with the company. We look forward to building on this level of collaboration to grow together in the coming years.”
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Vishay Intertechnology, Inc. introduced a new fourth-generation 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHP054N65E slashes on-resistance by 48.2 %, while offering a 59 % lower resistance times gate charge, a key figure of merit (FOM) for 650 V MOSFETs used in power conversion applications.
Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high tech equipment. With the SiHP054N65E and other devices in the fourth-generation 650 V E Series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks.
Typical applications will include servers, edge computing, and data storage; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.
Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHP054N65E’s low typical on-resistance of 0.051 Ω at 10 V results in a higher power rating for applications > 2 kW and allows the device to address the Open Compute Project’s Open Rack V3 (ORV3) standards. In addition, the MOSFET offers ultra low gate charge down to 72 nC. The resulting FOM of 3.67 Ω*nC is 1.1 % lower than the closest competing MOSFET in the same class, which translates into reduced conduction and switching losses to save energy and increase efficiency. This allows the device to address the specific titanium efficiency requirements in server power supplies or reach 96 % peak efficiency in telecom power supplies.
For improved switching performance in hard-switched topologies such as PFC, half-bridge, and two-switch forward designs, the MOSFET released today provides low typical effective output capacitances Co(er) and Co(tr) of 115 pF and 772 pF, respectively. The device’s resulting resistance times Co(er) FOM is an industry-low 5.87 Ω*pF. Offered in the TO-220AB package and providing increased dv/dt ruggedness, the SiHP054N65E is RoHS-compliant, halogen-free, and Vishay Green, and is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.
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