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Vishay Intertechnology showcased its latest semiconductor and passive component technologies at PCIM Asia 2026, held from August 26 to 28 at the Shenzhen World Exhibition and Convention Center in Shenzhen, China. The company’s exhibits focused on AI infrastructure, physical AI, software-defined vehicles and automotive power applications.
For AI infrastructure, Vishay presented technologies spanning the power architecture from grid-level conversion to board-level power delivery. Demonstrations covered solid-state transformers (SSTs), AC/DC power supply units, high-voltage DC (HVDC) conversion, DC/DC converters, battery backup units (BBUs), capacitor backup units (CBUs) and hot-swap systems.
The SST reference design incorporated SiC MOSFET power modules in the EMIPAK 2B package alongside DC-Link film capacitors, aluminum electrolytic capacitors and power resistors. Components included 11µF, 1800V metallized polypropylene capacitors, power electronic capacitors rated up to 310µF and 2000V, and non-inductive power resistors with working voltages up to 5000V.
For AI server AC/DC power supplies, Vishay displayed Gen 5 E series MOSFETs for PFC and LLC stages and TrenchFET Gen V MOSFETs for synchronous rectification and OR-ing. Other components included low-profile and bridge rectifiers, SiC Schottky diodes for high-speed hard-switching and clamp protection, and Power Metal Strip resistors for high-current sensing.
HVDC exhibits included Gen 4 SiC Schottky diodes designed with virtually no recovery tail and a minimum creepage distance of 3.2mm. Vishay also presented DC-Link film capacitors capable of operating at up to +125°C and PTC thermistors for inrush-current limiting with energy absorption ratings up to 300J.
At the board level, Vishay demonstrated PowerPAK SO-8DC MOSFETs rated for operation up to +175°C, along with gate-drive resistors. BBU and CBU solutions included edge-wound inductors rated up to 260A with 350VDC coil-to-core isolation, IHDV inductors rated up to 150A with 1500VDC isolation and IHLP power inductors supporting currents up to 100A.
For software-defined vehicles, the company displayed AEC-Q100-qualified integrated smart power stages supporting 50A continuous and 80A peak current, AEC-Q200 polymer tantalum capacitors, 7kW automotive TVS protection devices, Ethernet ESD protection diodes, current-sense resistors and MOSFETs for reverse-polarity protection.
Vishay also demonstrated components for humanoid robot motor control, including MOSFETs in PowerPAK SO-8 and TOLL packages, four-terminal shunt resistors rated up to 8W and an automotive-grade inductor with a 200V operating voltage rating.
Automotive power exhibits included SiC MOSFET and silicon MOSFET power modules for EV/HEV charging and 48V micromobility applications. Vishay also displayed half-bridge inverter modules integrating current and temperature sensing with an electrically isolated exposed DBC substrate.
Additional reference designs presented at the event included active discharge circuits for 400V and 800V DC-Link capacitors, a CAN FD-enabled intelligent battery shunt, a 48V/100A resettable eFuse, a single-stage 480µH EMI filter and a 3.3V active backup solution using electric double-layer capacitors.
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Vishay Intertechnology reported second-quarter 2026 GAAP revenue of $888.6 million and adjusted revenue of $918.6 million, with adjusted revenue increasing 9.5% sequentially and exceeding the upper end of the company’s guidance. The difference between reported and adjusted revenue reflects $30.0 million of tariff refunds passed through to customers, which had no impact on gross profit.
The quarter showed a notable improvement in profitability. Gross margin reached 23.3%, up from 21.0% in Q1 2026 and 19.5% in Q2 2025. Operating margin improved to 6.0%, compared with 2.6% in the previous quarter and 2.9% a year earlier. Net earnings reached $28.1 million, or $0.19 per diluted share, compared with $7.2 million and $0.05 per share in Q1. Adjusted EBITDA increased to $104.8 million, representing an adjusted EBITDA margin of 11.4%, up from 9.3% sequentially and 8.3% a year earlier.
Demand indicators were particularly strong. Vishay reported an overall book-to-bill ratio of 1.32, including 1.23 for semiconductors and 1.40 for passive components, while backlog reached 6.1 months. Management said demand strengthened across all end markets, sales channels and geographic regions, indicating that the improvement is relatively broad rather than concentrated in a single application or customer group.
CEO Joel Smejkal said Vishay is focused on supplying its growing customer base and taking advantage of the current industry upcycle while positioning the company for multi-year demand. For the power semiconductor market, the semiconductor book-to-bill above 1 is an encouraging indicator that order intake is running ahead of shipments as market conditions recover.
For Q3 2026, Vishay expects revenue of $945 million to $975 million. At the midpoint of $960 million, this would represent approximately 4.5% sequential growth from Q2 adjusted revenue. Gross margin is expected to reach approximately 24.0%, plus or minus 50 basis points, suggesting further profitability improvement as higher volumes support manufacturing utilization.
The company’s first-half results also show a substantial recovery from 2025. H1 revenue reached $1.73 billion versus $1.48 billion a year earlier, while operating income increased to $75.7 million from $22.9 million. Adjusted EBITDA rose to $182.8 million from $118.0 million, with the adjusted EBITDA margin expanding to 10.4% from 8.0%.
Vishay is simultaneously maintaining significant investment in manufacturing capacity. Capital expenditures reached $205.9 million during the first six months of 2026, compared with $126.2 million a year earlier. Free cash flow remained negative at $36.6 million for H1, although this represented a substantial improvement from negative $118.4 million in H1 2025. Cash and cash equivalents increased to approximately $1.30 billion following the company’s follow-on public offering.
The combination of a 1.23 semiconductor book-to-bill ratio, six months of backlog, improving margins and another sequential revenue increase expected in Q3 provides evidence that Vishay is moving further into an electronics demand recovery. For the discrete semiconductor market specifically, the figures suggest improving utilization and order momentum, while the company’s continued capacity investments position it to capture stronger demand across automotive, industrial, computing and other power-electronics applications.
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Vishay Intertechnology has expanded its TrenchFET® Gen IV MOSFET portfolio with four new 40 V N-channel power MOSFETs designed specifically for motor control applications operating in electrically noisy environments. Housed in the compact PowerPAK® SO-8 package, the new devices combine high gate threshold voltage and optimized gate charge characteristics to improve noise immunity and switching stability in applications such as BLDC motors, drones, power tools, and industrial automation.
The new MOSFET family addresses a common challenge in motor drive systems: unintended turn-on caused by switching noise and high dv/dt transients.
To improve robustness, the devices feature:
- Minimum gate-source threshold voltage (VGS(th)) greater than 2.5 V
- Qgd/Qgs ratios below 1
The elevated threshold voltage helps prevent false triggering, while the optimized gate charge distribution reduces gate voltage fluctuations and improves immunity to switching-induced noise.
The new MOSFETs are well suited for applications requiring efficient synchronous rectification and DC-DC conversion under demanding switching conditions, including:
- Brushless DC (BLDC) motor drives
- Cordless power tools
- Drones and UAVs
- Industrial automation equipment
- General DC-DC converters
The portfolio includes four devices offering different trade-offs between conduction loss and gate charge:
Device Typical RDS(on) Typical Gate Charge SIR5402DP 0.9 mΩ 82 nC SIR5404DP 1.55 mΩ 61.5 nC SIR5406DP 1.9 mΩ 44 nC SIR5408DP 2.5 mΩ 32.6 nC All devices maintain Qgd/Qgs ratios between 0.69 and 0.75, supporting stable gate drive behavior across the family.
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Vishay Intertechnology, Inc. has expanded its Gen 7 platform of 1200 V FRED Pt® Hyperfast rectifiers with the introduction of six new devices housed in the eSMP® series SMPC HV package. The new rectifiers are designed for industrial, automotive, and energy applications and offer an optimized balance between reverse recovery charge (Qrr) and forward voltage drop, while also delivering low junction capacitance and fast recovery performance.
The new Vishay Semiconductors devices include the VS-E7SX0112-M3V, VS-E7SX0212-M3V, VS-E7SX0312-M3V, and the AEC-Q101 qualified VS-E7SX0112HM3V, VS-E7SX0212HM3V, and VS-E7SX0312HM3V.
Designed to reduce switching losses and improve system efficiency, the rectifiers combine a recovery time of 50 ns with reverse recovery charge values as low as 105 nC typical, forward voltage drop down to 1.45 V, and junction capacitance as low as 7.25 pF. The devices support non-repetitive peak surge currents of up to 70 A.
The rectifiers are offered in a compact SMPC HV package measuring 4.3 mm × 6.5 mm with a profile height of only 1.1 mm. The package is footprint-compatible with TO-277A and features a minimum creepage distance of 5.4 mm. In addition, the molding compound provides a comparative tracking index (CTI) of 600 or greater, meeting Material Group I requirements. According to Vishay, these characteristics can help reduce component count and lower bill-of-material costs in high-voltage designs compliant with IEC 60664-1 requirements.
The new devices are intended for use as clamp, snubber, and freewheeling diodes in flyback auxiliary power supplies and high-frequency rectification circuits supporting bootstrap driver functionality. They can also be used for desaturation protection in systems employing the latest fast-switching IGBTs and high-voltage silicon and silicon carbide MOSFETs.
Target applications include industrial drives and power tools, onboard chargers and motor systems for electric vehicles, renewable energy generation and storage systems, as well as Ćuk converters and industrial LED SEPIC circuits.
The rectifiers utilize a planar structure and platinum-doped lifetime control technology designed to ensure system reliability and robustness while maintaining high performance. Optimized stored charge characteristics and low recovery current contribute to lower switching losses and reduced power dissipation.
The devices are RoHS-compliant, halogen-free, and rated for operation at temperatures up to +175°C. They also feature Moisture Sensitivity Level 1 in accordance with J-STD-020 requirements.
The product lineup includes 1 A, 2 A, and 3 A variants with voltage ratings of 1200 V. Reverse recovery charge ranges from 105 nC to 240 nC, while junction capacitance ranges from 7.25 pF to 20 pF depending on the device. Automotive-qualified versions are available for each current rating.
Samples and production quantities of the new Gen 7 hyperfast rectifiers are available immediately, with standard lead times of approximately eight weeks.
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Vishay Intertechnology, Inc. has introduced the VS-HOT200C080, a new 200 A power module designed to reduce board space requirements and improve efficiency in 48 V traction inverters for light electric vehicles (LEV) and belt-start generator/recuperation systems used in mild-hybrid electric vehicles (MHEV).
For these applications, the Vishay Semiconductors VS-HOT200C080 can reduce board space requirements by up to 15% compared with conventional discrete-component solutions. The integrated module also incorporates MOSFETs featuring an on-resistance of 0.45 mΩ, helping to reduce conduction losses by 32% compared to competing solutions.
The VS-HOT200C080 integrates 80 V MOSFETs in a half-bridge configuration, along with a shunt resistor for current sensing, bypass capacitors to improve switching performance, and an NTC thermistor for temperature monitoring. These components are housed within an insulated 30 mm × 22.8 mm transfer-molded FlatPAK HC0 package that incorporates an electrically isolated exposed direct bonded copper (DBC) substrate.
According to Vishay, the module’s transfer-mold technology supports reliable operation across a wide temperature range from -55°C to +175°C, particularly under power-cycling conditions. The device is designed to meet the demanding reliability requirements of the AQG-324 qualification standard.
The HC0 package incorporates signal pins and power tabs positioned at different heights, enabling designers to separate power and signal PCBs. This arrangement simplifies system design and routing while providing the option to stack the signal and power boards to further reduce overall space requirements.
Samples and production quantities of the VS-HOT200C080 are available immediately, with lead times currently quoted at 13 weeks.
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LATEST NEWSVishay to Showcase Power Semiconductor and Passive Solutions for Electrification at PCIM Europe 2026
May 20, 2026
2 Min ReadVishay Intertechnology will present its latest passive components, semiconductors, and reference designs at PCIM Europe 2026, focusing on technologies that support electrification, energy efficiency, and decarbonization across automotive, industrial, renewable energy, and data center applications.
The company’s exhibit will highlight a broad range of passive solutions, including advanced power resistors, shunts, capacitors, magnetics, and inductors designed to improve power density, thermal performance, and system reliability. These products target applications such as EVs, renewable energy systems, industrial drives, and AI data center power supplies.
On the semiconductor side, Vishay will showcase silicon carbide (SiC) MOSFET-based power modules and reference designs aimed at high-voltage power conversion systems for e-mobility and energy infrastructure. The company will also feature optoelectronic components, sensors, and system-level design solutions intended to accelerate development cycles and optimize system efficiency.
In addition, Vishay plans to demonstrate compact haptic feedback technologies and control software designed for rapid implementation of advanced user interface experiences.
A key highlight at the event will be a presentation on future DC-coupled EV charging architectures, focusing on efficient photovoltaic-to-EV energy transfer without the limitations associated with traditional AC coupling.
From a market perspective, Vishay’s portfolio strategy reflects increasing convergence between passive and active power technologies as system designers pursue higher efficiency and greater integration. The company is positioning itself as a broad solutions provider supporting key growth areas including electrified transportation, renewable energy, industrial automation, and AI-driven infrastructure.
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Vishay Intertechnology has launched a new family of 16 FRED Pt ultrafast rectifiers in the DFN6546A package, targeting space-constrained, high-efficiency applications across automotive, industrial, and consumer markets.
The new 200 V devices offer current ratings from 6 A to 15 A and are available in both commercial and AEC-Q101 qualified automotive-grade versions. The DFN6546A package features a compact 6.5 mm × 4.6 mm footprint with an ultra-low height of 0.88 mm, enabling improved PCB space utilization and supporting increasingly dense power designs.
From a performance standpoint, the rectifiers deliver low forward voltage (approximately 0.75 V), fast reverse recovery, and low reverse recovery charge, reducing switching losses and improving overall system efficiency. Enhanced thermal performance is achieved through optimized copper mass and die placement, allowing higher current capability compared to similarly sized packages.
The devices are designed for a wide range of applications, including DC/DC converters, high-frequency inverters, freewheeling diodes, and protection circuits. In automotive systems, they target use cases such as ECUs, ADAS, lighting, and 48 V power architectures in EVs and HEVs. They also support industrial automation, telecom, and consumer electronics applications.
A key packaging advantage is the inclusion of wettable flanks, enabling automated optical inspection (AOI) and eliminating the need for X-ray inspection—an important factor for high-volume manufacturing efficiency.
From a market perspective, this release highlights the continued evolution of silicon-based rectifiers through packaging and thermal innovation. While wide-bandgap devices are gaining share in high-voltage segments, optimized silicon rectifiers remain highly relevant in cost-sensitive, high-volume applications where efficiency, reliability, and compact form factors are critical.
Vishay’s latest offering reinforces its position in discrete power components by addressing the growing demand for miniaturization and improved thermal performance in modern power electronics systems.
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Vishay Intertechnology, Inc. reported fourth-quarter 2025 revenues of $800.9 million, with gross margin of 19.6% that included an approximately 130-basis-point headwind related to Newport. GAAP EPS was $0.01. The quarter’s book-to-bill was 1.20, including 1.27 for semiconductors and 1.13 for passive components, and backlog exited the quarter at 4.9 months.
Management noted that Q4 capped a year of steady improvement, with revenue up 1.3% sequentially on broadening demand in industrial and AI-related power applications and strength across all channels, led by distribution. Orders reached a three-year high, positioning the company for 2026 with a focus on competitive lead times, market outperformance, and continued execution on its strategy to accelerate revenue growth, elevate profitability, and enhance returns.
Outlook for Q1 2026:
- Revenue expected between $800 million and $830 million
- Gross margin expected at 19.9% ± 50 bps, including an estimated 50–75 bps negative impact related to Newport
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Vishay Intertechnology, Inc. introduced five 1200 V MOSFET power modules built on its latest-generation silicon carbide (SiC) technology and housed in the fully insulated, compact SOT-227 package. The new Vishay Semiconductors devices—VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120—deliver best-in-class forward voltage drop down to 0.83 V to cut conduction losses and raise system efficiency.
Offered in single-switch and low-side chopper configurations, each module integrates a SiC MOSFET with a soft body diode to minimize reverse-recovery charge, reducing switching losses in medium- to high-frequency designs. Target applications include solar inverters; off-board EV chargers; SMPS, DC/DC converters, UPS and HVAC systems; large battery storage; and telecom power supplies.
The SOT-227 form factor enables drop-in replacement for competing modules without PCB changes. Its molded, fully insulated design provides electrical isolation up to 2500 V for one minute, which can lower system cost by eliminating separate insulation between the device and heatsink.
Key characteristics include continuous drain current ratings from 50 A to 200 A, low on-resistance down to 12.1 mΩ, high-speed switching with low capacitance, and a maximum operating junction temperature of +175 °C. The devices are RoHS-compliant and UL-approved (file E78996).
Device highlights:
- VS-SF50LA120 — 1200 V, 50 A, 43 mΩ, low-side chopper, SOT-227
- VS-SF50SA120 — 1200 V, 50 A, 47 mΩ, single switch, SOT-227
- VS-SF100SA120 — 1200 V, 100 A, 23 mΩ, single switch, SOT-227
- VS-SF150SA120 — 1200 V, 150 A, 16.8 mΩ, single switch, SOT-227
- VS-SF200SA120 — 1200 V, 200 A, 12.1 mΩ, single switch, SOT-227
Samples and production quantities are available now with 13-week lead times.
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Vishay Intertechnology, Inc. unveiled four 100 V Gen 2 Trench MOS Barrier Schottky (TMBS®) rectifier modules in a fully insulated SOT-227 footprint, optimized for industrial power conversion. The new devices deliver best-in-class forward voltage drop down to 0.83 V to cut conduction losses and boost system efficiency, and can serve as drop-in replacements for competing SOT-227 solutions.
Engineered for high-frequency converters and power supplies in welding and industrial SMPS, 48 V battery-powered light vehicles, telecom equipment, and as blocking diodes for large battery systems, the modules combine ultra-low forward voltage with negligible Qrr and operation up to +150 °C.
Product lineup:
- VS-QA100FA10 — dual-diode, parallel configuration, 100 A per module, 100 V VRRM, 0.83 V VFM
- VS-QA150BA10 — single-phase bridge, 150 A, 100 V VRRM, 0.87 V VFM
- VS-QA200FA10 — dual-diode, parallel configuration, 200 A per module, 100 V VRRM, 0.83 V VFM
- VS-QA400FA10 — dual-diode, parallel configuration, 400 A per module, 100 V VRRM, 0.87 V VFM
Key benefits:
- Industry-standard SOT-227 package for easy drop-in efficiency upgrades
- Ultra-low forward voltage (down to 0.83 V) to reduce conduction losses
- Negligible reverse recovery charge (Qrr) for high-frequency operation
- High-temperature capability to +150 °C for demanding environments
- RoHS-compliant and UL-approved (file E78996)
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