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Vishay Intertechnology, Inc. has announced financial results for the fiscal third quarter ended September 27, 2025.
The company reported third-quarter revenue of $790.6 million. Gross margin was 19.5 percent, which included an approximate 150 basis point negative impact related to its Newport operations. Vishay reported a GAAP loss per share of $(0.06) and an adjusted earnings per share of $0.04.
The company’s book-to-bill ratio for the quarter was 0.97, with a ratio of 0.96 for semiconductors and 0.98 for passive components. The backlog at quarter-end stood at 4.4 months.
“Our third quarter revenue growth demonstrates Vishay’s alignment with high-growth markets including smart grid infrastructure, AI-related power requirements, automotive, and aerospace/defense, while the market overall continues to gradually recover,” said Joel Smejkal, President and CEO of Vishay. “The heavy investments in capacity expansion we have made over the past three years are enabling Vishay to capitalize on market upcycles in these high-growth segments, reliably meeting quick-turn delivery requirements while maintaining competitive lead times.”
For the fourth quarter of 2025, Vishay expects revenue in the range of $790 million, plus or minus $20 million. Gross profit margin is projected to be approximately 19.5 percent, plus or minus 50 basis points. This guidance includes an expected 150 to 175 basis point negative impact related to Newport.
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Vishay Intertechnology, Inc. announced that it has been honored by DENSO, a leading mobility supplier, with a 2025 North America Business Partner Award in the Value Leader category.
DENSO’s Business Partner Awards are given to companies that demonstrate exceptional supplier partnership in such areas as quality, service, technology, value, and sustainability. Vishay earned a Value Leader Award for consistently proposing innovative components that enhance DENSO’s designs, while providing exceptional supplier support.
“With all the change currently facing our industry, we must remain flexible and resilient to deliver for our customers,” said Kim Buhl, vice president of the North America Purchasing Group at DENSO. “We can only do this with the help of our suppliers. So, this year, as we congratulate those who have performed exceptionally in creating new value for DENSO, we also thank our entire supplier network. We call on each partner to continue to take on new challenges, and opportunities, with us as we strive to contribute to a better world.”
“It’s a tremendous honor to receive the 2025 Value Leader Award from DENSO — a recognition that underscores the strength of our customer-first collaboration,” said Bill Boldt, senior vice president of sales and marketing, Americas, at Vishay. “This award reflects our growth-driven commitment to innovation and to building strategic partnerships that help customers succeed, even amid today’s market uncertainties. We’re proud to support DENSO’s mission to advance cleaner, safer mobility and are ready to meet the growing demand for our components.”
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Vishay Intertechnology, Inc. introduced three new Gen 3 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the compact, low profile SlimSMA HV (DO-221AC) package. Featuring a merged PIN Schottky (MPS) design and minimum creepage distance of 3.2 mm, the 1 A VS-3C01EJ12-M3 and 2 A VS-3C02EJ07-M3 and VS-3C02EJ12-M3 combine low capacitive charge with temperature-invariant switching behavior to increase efficiency in high speed, hard-switching power designs.
For high voltage applications, the high creepage distance of the Vishay Semiconductors devices released today provides improved electrical isolation, while their SlimSMA HV package features a molding compound with a high CTI ≥ 600 to ensure excellent electrical insulation. For space-constrained designs, the diodes offer a low profile of 0.95 mm compared to 2.3 mm for competing SMA and SMB packages with a similar footprint.
Unlike silicon diodes, the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3 maintain a low capacitive charge down to 7.2 nC irrespective of temperature, resulting in faster switching speeds, reduced power losses, and improved efficiency for high frequency applications. In addition, the devices have virtually no recovery tail, which further improves efficiency, while their MPS structure delivers a reduced forward voltage drop down to 1.30 V.
With a high operating temperature of +175 °C, typical applications for the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3 will include bootstrap, anti-parallel, and PFC diodes for DC/DC and AC/DC converters in server power supplies; energy generation and storage systems; industrial drives and tools; and X-ray generators. For easy paralleling in these applications, the devices offer a positive temperature coefficient.
RoHS-compliant and halogen-free, the diodes feature a Moisture Sensitivity Level of 1 in accordance with J-STD-020 and meet the JESD 201 class 2 whisker test.
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Vishay Intertechnology, Inc. announced that the company’s facility in Borgaro Torinese, Italy, has been approved for inclusion in “Silicon Valley 8.0 in Piemonte for a Green and Smart Mobility” (SVINBO 8.0), a funded project submitted to the European Union (NGEU) and the Italian government. Funding for the grant will be provided through the NGEU M1C2 – 5.2 program targeting productivity and value chains for microelectronics and semiconductors.
In cooperation with the Polytechnic of Turin, SVINBO 8.0 consists of an investment project aimed at the production of a new family of semiconductors for the EV / HEV market, in addition to an R&D project aimed at developing new diode chips for e-mobility and new power modules. In addition to strengthening production and technology, the inclusion of Vishay in SVINBO 8.0 will have strategic impacts on the microelectronic supply chain, improving competitive positioning in the territory.
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Vishay Intertechnology, Inc. introduced a new Gen 4.5 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHK050N65E slashes on-resistance by 48.2 %, while offering a 65.4 % lower resistance times gate charge, a key figure of merit (FOM) for 650 V MOSFETs used in power conversion applications.
Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high tech equipment. With the SiHK050N65E and other devices in the Gen 4.5 650 V E Series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks.
Typical applications will include servers, edge computing, and super computers; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; telecom SMPS; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.
Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHK050N65E’s low typical on-resistance of 0.048 Ω at 10 V results in a higher power rating for applications > 6 kW. With 50 V of additional breakdown voltage, the 650 V device addresses 200 VAC to 277 VAC input voltages and the Open Compute Project’s Open Rack V3 (ORV3) standards. In addition, the MOSFET offers ultra low gate charge down to 78 nC. The resulting FOM of 3.74 Ω*nC translates into reduced conduction and switching losses to save energy and increase efficiency. This allows the device to address the specific titanium efficiency requirements in server power supplies or reach 96 % peak efficiency.
For improved switching performance in hard-switched topologies such as PFC and two-switch forward designs, the MOSFET released today provides low typical effective output capacitances Co(er) and Co(tr) of 167 pF and 1119 pF, respectively. The device’s resulting resistance times Co(er) FOM is an industry-low 8.0 Ω*pF. The SiHK050N65E is offered in the PowerPAK® 10 x 12 package with a Kelvin connection for reduced gate noise and provides increased dv/dt ruggedness. RoHS-compliant and halogen-free, the MOSFET is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.
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Vishay Intertechnology, Inc. announced that at the Applied Power Electronics Conference and Exposition (APEC) 2025, the company will be showcasing its broad portfolio of passive and semiconductor solutions that address the latest trends in power electronics — from energy harvesting, electric vehicle (EV) powertrains, and battery technologies to high efficiency power conversion for data centers.
Taking center stage in booth 905 will be Vishay’s newly released 1200 V MaxSiC™ series silicon carbide (SiC) MOSFETs, which deliver on-resistances of 45 mΩ, 80 mΩ, and 250 mΩ in standard packages for industrial applications, with custom products also possible. In addition, Vishay will provide a portfolio roadmap for 650 V to 1700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology — enabled through the company’s acquisition of MaxPower Semiconductor, Inc. — which will address market demands in traction inverter, photovoltaic energy storage, on-board charger, and charging station applications.
In booth 419, Vishay will be highlighting high energy PTC and NTC inrush current limiting solutions from the company’s most recent acquisition: Ametherm. They include a PTC matrix capable of withstanding 1500 VDC and 1125 J. Vishay Ametherm products are well-suited to growing industries and applications, such as robotic automation, industrial power supplies and motor drives, power distribution for server and AI cloud computing, LED lighting systems, medical devices, imaging equipment, electric vehicle charging, and alternative energy infrastructure.
At APEC 2025, Vishay will also be offering a variety of product-focused demonstrations highlighting IHLE® series low profile, high current inductors featuring integrated E-field shields; the THJP ThermaWick® Thermal Jumper; the pulse performance of MELF, CRCW / CRCW-HP thick film, and MCS, MCU, and MCW thin film chip resistors; and the thermal capabilities of the PCAN and RCP high power thin and thick film resistors. In addition, automotive-focused application demonstrations will include:
- An intelligent battery shunt built on WSBE Power Metal Strip® resistors, with low TCR and a CAN FD / USB interface for 400 V / 800 V systems
- A 48 V eFuse featuring TrenchFET® MOSFETs designed to handle a continuous current up to 100 A and operate continuously at maximum current with less than 14 W of losses
- A 1 kW, 48 V / 12 V buck-boost converter featuring two module power stages — each rated for 500 W — in a compact form factor
Additional Vishay passive components on display at APEC 2025 will include the IHDM series of high current, edge-wound through hole inductors with continuous operation to +180 °C; hybrid planar and integrated transformers; wireless charging coils; sensing NTC and PTC thermistors, including the PTCEL series capable of handling energy absorption up to 240 J; Power Metal Strip resistors with high power to 9 W and shunts with low TCR down to < ± 10 ppm/°C; high power wirewound, thin film, and thick film resistors, including the anti-surge RCS with power to 0.5 W in the 0805 case size; high frequency thick film resistors with up to 500 000 thermal cycles; high voltage thick film resistors and dividers; high voltage aluminum, ceramic, and power electronic capacitors (PEC); high capacity energy storage capacitors; military-grade, high energy, and hermetically sealed tantalum capacitors; and robust metallized polypropylene film capacitors, including the MKP1848e DC-Link capacitor with high temperature operation to +125 °C.
Highlighted Vishay semiconductor solutions will consist of the SiC967 microBRICK® synchronous buck regulator with integrated power MOSFETs and inductor and a wide input voltage range of 4.5 V to 60 V; scalable microBUCK® voltage regulators that deliver high efficiency; 400 V, 600 V, and 1200 V standard rectifiers in SlimDPAK 2L and SMPD 2L packages with high creepage distance; 650 V and 1200 V SiC Schottky diodes up to 12 A in eSMP® series and power packages for AC/DC power factor correction (PFC) and ultra high frequency output rectification; transient voltage suppressors (TVS); and analog switches in all major configuration types.
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LATEST NEWSVishay Intertechnology to Showcase Cutting-Edge Semiconductor and Passive Solutions at ELECRAMA 2025
February 19, 2025
3 Min ReadVishay Intertechnology, Inc. announced that at ELECRAMA 2025, the company will be exhibiting its broad portfolio of passive and semiconductor solutions that are enabling the future of energy technology. In hall 16, booth B14, Vishay will be showcasing its differentiated products and solutions in a series of demonstrations across a variety of markets, including automotive, transmission and distribution, industrial, renewable energy, and locomotive.
Among the demonstrations and components taking center stage at Vishay’s booth will be:
- A variety of Vishay ESTA power electronic capacitors (PEC) for DC-Link, snubber, and AC filtering applications, together with LVAC power capacitors, box capacitors, and detuned reactors
- A 48 V, 10 kW traction inverter for light electric vehicles
- A 3.6 kW 800 V to 48 V power converter for auxiliary DC/DC power
- A scalable 30 kW DC fast charger
- A 10 kW photovoltaic inverter with MPPT
Other Vishay passive components on display at ELECRAMA 2025 will include inrush current limiters and sensing thermistor solutions from the company’s latest acquisition: Ametherm. Highlighted capacitors will consist of tantalum polymer, metallized polypropylene DC-Link, interference suppression, and ceramic disc safety devices, in addition to EDLC supercapacitors.
Featured resistors will include water cooled, vitreous, and axial cemented leaded wirewound devices; Power Metal Strip® battery shunts; high power and high voltage thick film chip resistors; thin film MELF and thick film power devices; hybrid wirewound resistors for EV applications; custom magnetics; IHLE® high current inductors with e-field shields; and IHPT™ haptic feedback actuators with Immersion licenses.
Highlighted Vishay semiconductor solutions will consist of industrial-grade 650 V and 1200 V Gen 3 silicon carbide (SiC) Schottky diodes and diode modules, 600 V and 1200 V Gen 5 FRED Pt® rectifiers and 1200 V Gen 7 FRED Pt® Hyperfast rectifiers, and also 600 W unidirectional TVS in the DFN3820 package. Optoelectronic solutions on display will include widebody high speed optocouplers and optocouplers with phototransistor output and Schmitt-Trigger functionality; 1 Form A solid-state relays; high reliability, reinforced isolated amplifiers; and ambient light sensors with I²C interfaces.
Vishay will be highlighting 6 A, 8 A, and 60 A eFuses — in addition to an integrated OR-ing switch featuring current sensing — as well as a 50 A VRPower® integrated power stage and 60 A to 100 A smart power stages in MLP packages. The company will also be showcasing its 1200 V MaxSiC SiC MOSFETs, in addition to MOSFETs in the PowerPAK® 10 x 12 and 8 x 8LR packages, and dual PowerPAIR® 6 x 5FS and 3 x 3FS packages.
ELECRAMA 2025 will be taking place February 22-26 in Greater Noida, India. More information on the event is available at https://elecrama.com/.
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Vishay Intertechnology, Inc. announced results for the fiscal fourth quarter and year ended December 31, 2024.
Highlights
- 4Q 2024 revenues of $714.7 million
- 4Q 2024 GAAP loss per share of ($0.49); adjusted EPS of $0.00
- 4Q 2024 book-to-bill of 1.01, with book-to-bill of 0.99 for semiconductors and 1.03 for passive components
- Backlog at quarter end was 4.4 months
- Returned a total of $26.2 million to stockholders in Q4 2024; $105.1 million for the year
- FY 2024 capex of $320.1 million
“Our fourth quarter results came in as expected, slightly below the third quarter. Nevertheless, we saw many promising indicators including a positive book-to-bill for the first time in nine quarters, strong order intake for smart grid infrastructure projects, and initial shipments for A.I. servers,” said Joel Smejkal, President and CEO.
“For 2025, we are well positioned to support a market upturn as capacity, print position, and customer engagements have been key priorities under Vishay 3.0. All of our strategic levers are in play as we continue to execute our five-year plan to position Vishay to take advantage of the megatrends of e-mobility and sustainability.”
For the first quarter of 2025, management expects revenues in the range of $710 million +/- $20 million and a gross profit margin in the range of 19.0% +/- 50 basis points, including the negative impact of approximately of 175-200 basis points related to Newport.
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Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency applications, the Vishay Semiconductors devices offer the best trade-off between capacitive charge (QC) and forward voltage drop for diodes in their class.
The devices consist of 40 A to 240 A dual diode components in a parallel configuration, and 50 A and 90 A single phase bridge devices. Built on state of the art thin wafer technology, the diodes feature a low forward voltage drop down to 1.36 V that dramatically reduces conduction losses for increased efficiency. Further increasing efficiency, the devices offer better reverse recovery parameters than Si-based diodes and have virtually no recovery tail.
Typical applications for the components will include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. In these applications, the diodes’ low QC down to 56 nC allows for high speed switching, while their industry-standard package offers a drop-in replacement for competing solutions.
The diodes deliver high temperature operation to +175 °C and a positive temperature coefficient for easy parallelling. UL-approved to file E78996, the devices feature a large creepage distance between terminals and a simplified mechanical design for rapid assembly.
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To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. introduced a new 150 V TrenchFET® Gen V n-channel power MOSFET in the PowerPAK® SO-8S (QFN 6×5) package.
Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3% and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — by 15.4% while providing 62.5% lower RthJC and 179 % higher continuous drain current.
With the industry’s lowest on-resistance of 5.6 mΩ at 10 V and on-resistance times gate charge FOM of 336 mΩ*nC, the device released today minimizes power losses from conduction. This allows designers to boost efficiency to meet next-generation power supply requirements, such as 6 kW AI server power systems. In addition, the extremely low 0.45 °C/W RthJC of the PowerPAK SO-8S package enables continuous drain current up to 144 A to increase power density while providing robust SOA capability.
The SiRS5700DP is ideal for synchronous rectification, DC/DC converters, hot swap switching, and OR-ing functionality. Typical applications will include servers, edge computing, super computers, and data storage; telecom power supplies; solar inverters; motor drives and power tools; and battery management systems. RoHS-compliant and halogen-free, the MOSFET is 100 % Rg and UIS tested and complies with IPC-9701 criteria for more reliable temperature cycling. The device’s standard 6 mm by 5 mm footprint is fully compatible with the PowerPAK SO-8 package.
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