Texas Instruments Tag Archive

  • Texas Instruments Introduced Advanced Power Management Chips to Enhance Efficiency and Protection in Data Centers

    Texas Instruments Introduced Advanced Power Management Chips to Enhance Efficiency and Protection in Data Centers

    3 Min Read

    Texas Instruments debuted new power-management chips to support the rapidly growing power needs of modern data centers. As the adoption of high-performance computing and artificial intelligence (AI) increases, data centers require more power-dense and efficient solutions.

    TI’s new TPS1685 is the industry’s first 48V integrated hot-swap eFuse with power-path protection to support data center hardware and processing needs. To simplify data center design, TI also introduced a new family of integrated GaN power stages, the LMG3650R035, LMG3650R025and LMG3650R070, in industry-standard TOLL packaging. TI is showcasing these devices at the 2025 Applied Power Electronics Conference (APEC), March 16-20, in Atlanta, Georgia.

    “With data centers increasingly demanding more energy, powering the world’s digital infrastructure begins with smarter, more efficient semiconductors,” said Robert Taylor, general manager, Industrial Power Design Services. “While advanced chips drive AI’s computational power, analog semiconductors are key to maximizing energy efficiency. Our latest power-management innovations are enabling data centers to reduce their environmental footprint while supporting the growing needs of our digital world.”

    As power demands surge, data center designers are shifting to 48V power architectures for enhanced efficiency and scalability to support components such as CPUs, graphics processing units and AI hardware accelerators. TI’s 48V stackable integrated hot-swap eFuse with power-path protection empowers designers to tackle high-power (>6kW) processing needs with a scalable device that simplifies design and reduces solution size by half compared to existing hot-swap controllers in the market.

    To learn more about designing with the TPS1685, read the technical article, “Powering Modern AI Data Centers with an Integrated 48V Hot-Swap eFuse Device.”

    In addition, TI introduced a new family of integrated GaN power stages. The LMG3650R035LMG3650R070 and LMG3650R025 leverage the benefits of TI GaN in an industry-standard TOLL package, allowing designers to take advantage of TI GaN efficiency without costly and time-consuming redesigns.

    The new power stages integrate a high-performance gate driver with a 650V GaN field-effect transistor (FET) while achieving high efficiency (>98%) and high-power density (>100W/in3). They also integrate advanced protection features including over-current protection, short-circuit protection and over-temperature protection. This is especially important for AC/DC applications like server power, where designers are challenged to push more power into smaller spaces.

    At APEC 2025, TI will showcases power solutions that enable designers to reimagine new levels of power density and efficiency, including:

    • Dell’s 1.8kW server power-supply unit (PSU) with TI GaN power stages: Dell’s first high-efficiency 12V PSU design uses a TI integrated GaN power stage. The PSU features a GaN FET with built-in driver, protection and temperature reporting to achieve over 96% system-level efficiency.
    • Vertiv’s 5.5kW server PSU: Part of Vertiv’s PowerDirect Rack DC power system, the latest PSU from Vertiv is powered by TI GaN technology to deliver up to 132kW per rack.
    • Greatwall’s 8kW PSU: To help designers increase power density, Greatwall and TI co-developed an 8kW open-rack PSU using TI GaN technology and TI C2000™ real-time microcontrollers.

    Throughout the show, TI power experts will lead 27 industry and technical sessions to address power-management design challenges. Visit TI in the Georgia World Congress Center, Booth No. 1213. The full schedule is available at ti.com/APEC.

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  • Texas Instruments Introduces Industry's First Space-Grade 200V GaN FET Gate Driver

    Texas Instruments Introduces Industry’s First Space-Grade 200V GaN FET Gate Driver

    3 Min Read

    Texas Instruments (TI) announced a new family of radiation-hardened and radiation-tolerant half-bridge gallium nitride (GaN) field-effect transistor (FET) gate drivers. This family of gate drivers includes the industry’s first space-grade GaN FET driver that supports up to 200V operation.

    The devices are available in pin-to-pin compatible ceramic and plastic packaging options and support three voltage levels. TI’s advancements in space-grade power products enable engineers to design satellite power systems for all types of space missions using just one chip supplier.

    Satellite systems are growing increasingly complex to meet the demand for more on-orbit processing and data transmission, higher-resolution imaging, and more precise sensing. To improve mission capabilities, engineers strive to maximize electrical power system efficiency. TI’s new gate drivers are designed to accurately drive GaN FETs with fast rise and fall times, improving power-supply size and density. This allows a satellite to more effectively use the power generated by its solar cells to perform mission functions.

    “Satellites perform critical missions, from providing global internet coverage to monitoring climate and shipping activity, enabling humans to better understand and navigate the world,” said Javier Valle, product line manager, Space Power Products at TI. “Our new portfolio enables satellites in low, medium and geosynchronous earth orbits to operate in the harsh environment of space for an extended period of time, all while maintaining high levels of power efficiency.”

    For more information, read the technical article, “How you can optimize SWaP for next-generation satellites with electronic power systems.”

    Optimizing size, weight and power (SWaP) using GaN technology can:

    • Improve electrical system performance. 
    • Extend mission lifetimes. 
    • Reduce satellite mass and volume.
    • Minimize thermal management overload.

    Designers can use the family for applications spanning the entire electrical power system.

    • The 200V GaN FET gate driver is suitable for propulsion systems and input power conversion in solar panels.
    • The 60V and 22V versions are intended for power distribution and conversion across the satellite.

    TI’s family of space-grade GaN FET gate drivers offers different space-qualified packaging options for the three voltage levels, including:

    • Radiation-hardened; Qualified Manufacturers List (QML) Class P and QML Class V in plastic and ceramic packages, respectively. 
    • Radiation-tolerant Space Enhanced Plastic (SEP) products.

    John Dorosa, a TI systems engineer, will present “How to easily convert a hard-switched full bridge to a zero-voltage-switched full bridge” on Tuesday, March 18, 2025, at 9:20 a.m. Eastern time at the Applied Power Electronics Conference in Atlanta, Georgia. This industry session will feature TI’s TPS7H6003-SP gate driver.

    Production quantities of the TPS7H6003-SP, TPS7H6013-SP, TPS7H6023-SP and TPS7H6005-SEP are available now on TI.com. Preproduction quantities of the TPS7H6015-SEP and TPS7H6025-SEP are also available, with the TPS7H6005-SP, TPS7H6015-SP and TPS7H6025-SP available for purchase by June 2025. Additionally, development resources include evaluation modules for all nine devices, as well as reference designs and simulation models.

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  • Texas Instruments Reports Q4 2024 and 2024 Financial Results

    Texas Instruments Reports Q4 2024 and 2024 Financial Results

    1 Min Read

    Texas Instruments Incorporated (TI) reported fourth quarter revenue of $4.01 billion, net income of $1.21 billion and earnings per share of $1.30. Earnings per share included a 2-cent benefit that was not in the company’s original guidance.

    Regarding the company’s performance and returns to shareholders, Haviv Ilan, TI’s president and CEO, made the following comments:

    • “Revenue decreased 3% sequentially and 2% from the same quarter a year ago.
    • “Our cash flow from operations of $6.3 billion for the trailing 12 months again underscored the strength of our business model, the quality of our product portfolio and the benefit of 300mm production. Free cash flow for the same period was $1.5 billion.
    • “Over the past 12 months we invested $3.8 billion in R&D and SG&A, invested $4.8 billion in capital expenditures and returned $5.7 billion to owners.
    • “TI’s first quarter outlook is for revenue in the range of $3.74 billion to $4.06 billion and earnings per share between $0.94 and $1.16. We now expect our 2025 effective tax rate to be about 12%.”

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  • Texas Instruments Awarded with CHIPS and Science Act Funding

    Texas Instruments Awarded with CHIPS and Science Act Funding

    3 Min Read

    Texas Instruments and the U.S. Department of Commerce announced an award agreement of up to $1.6 billion in direct funding through the U.S. CHIPS and Science Act, following the preliminary memorandum of terms announced in August 2024.

    The funding will help support three of TI’s new 300mm wafer fabs currently under construction in Texas and Utah. Support from the CHIPS Act, including the 25% investment tax credit, will help TI provide a geopolitically dependable supply of essential analog and embedded processing semiconductors.

    “As the largest analog and embedded processing semiconductor manufacturer in the U.S., TI is uniquely positioned to provide dependable, low-cost 300mm semiconductor manufacturing capacity at scale,” said Haviv Ilan, president and CEO of Texas Instruments. “The increasing number of electronic devices in our lives depend on our foundational chips, and we appreciate the support from the U.S. government to make the semiconductor ecosystem stronger and more resilient.”

    The CHIPS Act direct funding will support TI’s investments through 2029 for three large-scale 300mm wafer fabs in Sherman, Texas (SM1 and SM2), and Lehi, Utah (LFAB2). Together, these fabs will manufacture tens of millions of analog and embedded processing chips every day that are critical to a variety of end markets, including automotive, industrial, personal electronics, communications equipment and enterprise systems.

    Specifically, the CHIPS Act direct funding will be distributed upon completion of project milestones, supporting: 

    • Cleanroom construction and tool installations at SM1 in Sherman, Texas;
    • Shell construction of SM2, a second fab in Sherman, Texas; and
    • Cleanroom construction and tool installations at LFAB2, a second fab in Lehi, Utah.

    These connected, multi-fab sites in Texas and Utah will benefit from shared infrastructure, talent and technology sharing, and a strong network of existing suppliers and community partners. 

    Combined, TI’s three new fabs in Texas and Utah will create 2,000 company jobs, along with thousands of indirect jobs for construction, suppliers and supporting industries. TI is also investing in building its future workforce. As part of the CHIPS Act award agreement, TI will also receive up to $10 million for workplace development efforts in Texas and Utah.

    Consistent with TI’s longstanding commitment to responsible, sustainable manufacturing and environmental stewardship, the company’s 300mm wafer fabs will be entirely powered by renewable electricity. Additionally, TI is committed to reducing overall water consumption across its operations, endeavoring to achieve a 70% water reuse capability in Sherman, Texas, and Lehi, Utah. All of TI’s new 300mm fabs are also designed to meet LEED Gold standards for structural efficiency and sustainability.

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  • Texas Instruments Opened a New Product Distribution Center in Germany

    Texas Instruments Opened a New Product Distribution Center in Germany

    2 Min Read

    Texas Instruments (TI) announced the opening of its new, state-of-the-art product distribution center in Dreieich, Germany, outside of Frankfurt. This new distribution center includes 9,000 square meters of space and new automation features. The new center has the capacity to quickly ship up to 7,500 orders per day of a broad range of TI analog and embedded processing semiconductors across Europe.

    “Our new product distribution center offers faster, more efficient, flexible and reliable service for TI’s customers in Europe to meet semiconductor demand now and in the future,” said Stefan Bruder, president of Texas Instruments Europe. “Our new center in Dreieich is the latest addition to TI’s global product distribution network which, combined with our convenient purchasing options, provides an improved customer experience from product selection to shipment.”

    Located near many of TI’s industrial and automotive customers, as well as the Frankfurt Airport, the new distribution center enables faster product delivery in Europe. The pick, pack and ship process is fully automated and orders are ready to ship within 15 minutes or less. Customers in central Germany can expect same-day product delivery, while next-day delivery is available to customers in most European countries.

    TI has been operating in Europe since 1956, and its new distribution center builds on TI’s existing European footprint which includes a semiconductor wafer factory in Freising, Germany, research and development teams, as well as more than 30 sales offices across 18 different European countries.

    Customers in Europe and across the globe can conveniently buy from TI and save on exchange fees with more than 20 currency options available (including euro, pound sterling, Norwegian kroner and Swiss franc) when purchasing on TI.com or through TI API suites.  

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  • Texas Instruments Commits to Set Science-Based Targets for GHG Emissions Reduction

    Texas Instruments Commits to Set Science-Based Targets for GHG Emissions Reduction

    2 Min Read

    Texas Instruments (TI) announced that the Science Based Targets initiative (SBTi) has received the company’s commitment to set near-term company-wide emissions reductions in line with climate science.

    As part of its commitment, TI is developing science-based targets for review and validation by SBTi’s technical experts, including greenhouse gas (GHG) emissions reduction targets for Scope 1 and 2 emissions aligned with the Paris Agreement which sets the goal of limiting global warming to 1.5°C. In addition, TI plans to begin reporting additional relevant Scope 3 GHG emission categories in 2025 and plans to set supplier engagement targets to reduce emissions across its value chain.

    “Our semiconductors are the foundation of sustainable technology solutions, from renewable energy and storage to vehicle electrification,” said Haviv Ilan, TI president and chief executive officer. “As a manufacturer of tens of billions of semiconductors each year, it’s critical that we provide dependable capacity while continuously striving to reduce our environmental impact. Setting and achieving climate goals underscores TI’s long-standing commitment to operate in a socially thoughtful and environmentally responsible manner, and we are confident that our collective efforts will be impactful and long-lasting.”

    As TI works with SBTi to develop and assess its future goals, the company remains focused on its current multiyear goals that continue through 2025, including a reduction in absolute Scope 1 and Scope 2 emissions by 25% from a 2015 base year.

    As the company continues to expand its manufacturing and provide geopolitically dependable capacity, TI will further increase its use of renewable electricity, with key milestones to reach 100% in its 300mm manufacturing operations by 2025, 100% in its U.S. operations by 2027, and 100% in its worldwide operations by 2030.

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  • Texas Instruments Began Production of GaN Power Semiconductors in Japan

    Texas Instruments Began Production of GaN Power Semiconductors in Japan

    3 Min Read

    Texas Instruments (TI) announced it has begun production of gallium nitride (GaN)-based power semiconductors at its factory in Aizu, Japan. Coupled with its existing GaN manufacturing in Dallas, Texas, TI will now internally manufacture four times more GaN-based power semiconductors, as Aizu ramps to production.

    “Building on more than a decade of expertise in GaN chip design and manufacturing, we have successfully qualified our 200mm GaN technology – the most scalable and cost-competitive way to manufacture GaN today – to start mass production in Aizu,” said Mohammad Yunus, TI’s senior vice president of Technology and Manufacturing. “This milestone enables us to manufacture more of our GaN chips internally as we grow our internal manufacturing to more than 95% by 2030, while also sourcing from multiple TI locations, ensuring a reliable supply of our entire GaN portfolio of high-power, energy-efficient semiconductors.”

    An alternative to silicon, GaN is a semiconductor material that offers benefits in energy-efficiency, switching speed, power solution size and weight, overall system cost, and performance under high temperatures and high-voltage conditions. GaN chips provide more power density, or power in smaller spaces, enabling applications such as power adapters for laptops and mobile phones, or smaller, more energy-efficient motors for heating and air conditioning systems and home appliances.

    Today, TI offers the widest portfolio of integrated GaN-based power semiconductors, ranging from low- to high-voltage, to enable the most energy-efficient, reliable and power-dense electronics.

    “With GaN, TI can deliver more power, more efficiently in a compact space, which is the primary market need driving innovation for many of our customers,” said Kannan Soundarapandian, vice president of High-Voltage Power at TI. “As designers of systems such as server power, solar energy generation and AC/DC adapters face challenges to reduce power consumption and enhance energy efficiency, they are increasingly demanding a reliable supply of TI’s high-performance GaN-based chips. TI’s product portfolio of integrated GaN power stages enables customers to achieve higher power density, improved ease of use and lower system cost.”

    Further, with the company’s proprietary GaN-on-silicon process, more than 80 million hours of reliability testing, and integrated protection features, TI GaN chips are designed to keep high-voltage systems safe.

    Using the most advanced equipment available for GaN chip manufacturing today, TI’s new capacity enables increased product performance and manufacturing process efficiency, as well as a cost advantage. Also, the more advanced, efficient tools used in TI’s expanded GaN manufacturing can produce smaller chips, packing even more power. This design innovation can be manufactured using less water, energy and raw materials, and end products that use GaN chips enjoy these same environmental benefits.

    The performance benefits of TI’s added GaN manufacturing also enable the company to scale its GaN chips to higher voltages, starting with 900V and increasing to higher voltages over time, furthering power-efficiency and size innovations for applications like robotics, renewable energy and server power supplies.

    In addition, TI’s expanded investment includes a successful pilot earlier this year for development of GaN manufacturing processes on 300mm wafers. Further, TI’s expanded GaN manufacturing processes are fully transferable to 300mm technology, positioning the company to readily scale to customer needs and move to 300mm in the future.

    Expanding supply and innovation in GaN technology is the latest example of TI’s commitment to responsible, sustainable manufacturing. TI has committed to use 100% renewable electricity in its U.S. operations by 2027, and worldwide by 2030.

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  • Texas Instruments Published Q3 2025 Financial Results

    Texas Instruments Published Q3 2025 Financial Results

    1 Min Read

    Texas Instruments Incorporated reported third quarter revenue of $4.15 billion, net income of $1.36 billion and earnings per share of $1.47. Earnings per share included a 3-cent benefit for items that were not in the company’s original guidance.

    Regarding the company’s performance and returns to shareholders, Haviv Ilan, TI’s president and CEO, made the following comments:

    • “Revenue decreased 8% from the same quarter a year ago and increased 9% sequentially. Industrial continued to decline sequentially, while all other end markets grew.
    • “Our cash flow from operations of $6.2 billion for the trailing 12 months again underscored the strength of our business model, the quality of our product portfolio and the benefit of 300mm production. Free cash flow for the same period was $1.5 billion.
    • “Over the past 12 months we invested $3.7 billion in R&D and SG&A, invested $4.8 billion in capital expenditures and returned $5.2 billion to owners.
    • “TI’s fourth quarter outlook is for revenue in the range of $3.70 billion to $4.00 billion and earnings per share between $1.07 and $1.29. We continue to expect our fourth quarter effective tax rate to be about 13%.”

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  • Texas Instruments to Receive $1.6 billion in CHIPS and Science Act Funding to Support 300mm Fabs in Texas and Utah

    Texas Instruments to Receive $1.6 billion in CHIPS and Science Act Funding to Support 300mm Fabs in Texas and Utah

    6 Min Read

    Texas Instruments (TI) and the U.S. Department of Commerce have signed a non-binding Preliminary Memorandum of Terms for up to $1.6 billion in proposed direct funding under the CHIPS and Science Act to support three 300mm wafer fabs already under construction in Texas and Utah. In addition, TI expects to receive an estimated $6 billion to $8 billion from the U.S. Department of Treasury’s Investment Tax Credit for qualified U.S. manufacturing investments. The proposed direct funding, coupled with the investment tax credit, would help TI provide a geopolitically dependable supply of essential analog and embedded processing semiconductors.

    “The historic CHIPS Act is enabling more semiconductor manufacturing capacity in the U.S., making the semiconductor ecosystem stronger and more resilient,” said Haviv Ilan, president and CEO of Texas Instruments. “Our investments further strengthen our competitive advantage in manufacturing and technology as we expand our 300mm manufacturing operations in the U.S. With plans to grow our internal manufacturing to more than 95% by 2030, we’re building geopolitically dependable, 300mm capacity at scale to provide the analog and embedded processing chips our customers will need for years to come.”

    Since its founding more than 90 years ago, TI has been advancing technology, pioneering the transition from vacuum tubes to transistors and then to integrated circuits. Today, TI is the largest U.S. analog and embedded processing semiconductor manufacturer. TI chips are essential in nearly every type of electronic device, from cars with advanced safety and intelligence systems to life-saving medical equipment and smart appliances that make homes safer and more efficient.

    The proposed direct funding under the CHIPS Act would support TI’s investment of more than $18 billion through 2029, which is part of the company’s broader investment in manufacturing. This proposed direct funding will support three new wafer fabs, two in Sherman, Texas, (SM1 and SM2) and one in Lehi, Utah (LFAB2), specifically to:

    • Construct and build the SM1 cleanroom and complete pilot line for first production;
    • Construct and build the LFAB2 cleanroom for first production; and
    • Construct the SM2 shell.

    These connected, multi-fab sites benefit from shared infrastructure, talent and technology sharing, and a strong network of suppliers and community partners. They will produce semiconductors in 28nm to 130nm technology nodes, which provide the optimal cost, performance, power, precision and voltage levels required for TI’s broad portfolio of analog and embedded processing products.

    “With this proposed investment from the Biden-Harris Administration in TI, a global leader of production for current-generation and mature-node chips, we would help secure the supply chain for these foundational semiconductors that are used in every sector of the U.S. economy, and create tens of thousands of jobs in Texas and Utah,” said U.S. Secretary of Commerce Gina Raimondo. “The CHIPS for America program will supercharge American technology and innovation and make our country more secure – and TI is expected to be an important part of the success of the Biden-Harris Administration’s work to revitalize semiconductor manufacturing and development in the U.S.”

    With a long history of supporting its employees to build long-term, successful careers, TI is also investing in building its future workforce. TI will create more than 2,000 company jobs across its three new fabs in Texas and Utah, along with thousands of indirect jobs for construction, suppliers and supporting industries.

    “We are proud to work with Texas Instruments as they build new semiconductor fabs in Sherman and solidify Texas as the best state for semiconductors. Texas Instruments invented the microchip in Texas, and we are honored to be home to TI’s semiconductor manufacturing facilities in Dallas, Richardson and Sherman,” said Texas Gov. Greg Abbott. “With this latest project, TI is building on its more than 90-year legacy in Texas and adding thousands of good-paying jobs for Texans to manufacture critically important technology.”

    “By investing in semiconductor manufacturing, we are helping secure this vulnerable supply chain, boosting our national security and global competitiveness, and creating new jobs for Texans,” said U.S. Sen. John Cornyn. “The chipmaking capabilities these resources will enable at Texas Instruments will help the U.S. reclaim its leadership role in the critically important semiconductor industry, and I look forward to seeing more Texas-led advancements in the years to come.”

    In order to build a future-ready workforce, TI is enhancing the skills of current employees, expanding internships and creating pipeline programs with a focus on building electronic and mechanical skills. TI has robust engagements with 40 community colleges, high schools and military institutions across the U.S. to develop future semiconductor talent.

    “Utah is thrilled that Texas Instruments is expanding its manufacturing presence in the Silicon Slopes, furthering the impact Utahns have on critical semiconductor technology,” said Utah Gov. Spencer Cox. “This investment in semiconductor manufacturing not only creates more jobs, but also brings supply chains back to the United States.”

    “This proposed CHIPS funding will further support Texas Instruments’ investment in its new semiconductor fab in Lehi —and enhance Utah’s vital role in our national defense and economic success,” said U.S. Senator Mitt Romney. “I was an original sponsor of the CHIPS and Science Act—which made today’s announcement possible—because in order to compete on the world stage, we must continue to promote innovation, foster scientific talent, and expand research here at home. Texas Instruments’ expanded operations will help make the United States more self-reliant for chips essential to our national security and economy.”

    TI has a long-standing commitment to responsible, sustainable manufacturing and environmental stewardship. As part of this commitment, TI continually invests in its fabrication processes and equipment to reduce energy, material and water consumption, and greenhouse gas (GHG) emissions.

    The company’s 300mm wafer fabs will be entirely powered by renewable electricity. Additionally, all of TI’s new 300mm fabs are designed to meet LEED Gold standards for structural efficiency and sustainability. TI’s 300mm manufacturing facilities bring advantages in reducing waste and improving water and energy consumption per chip.

    TI semiconductors are and will increasingly play a critical role in helping reduce the impact on the environment, helping customers create smaller, more efficient and cost-effective technology solutions that in turn drive continued innovation in electrification and the expanded usage of renewable energy.

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  • Texas Instruments Published Q2 2024 Financial Results

    Texas Instruments Published Q2 2024 Financial Results

    1 Min Read

    Texas Instruments Incorporated (TI) reported second quarter revenue of $3.82 billion, net income of $1.13 billion and earnings per share of $1.22. Earnings per share included a 5-cent benefit for items that were not in the company’s original guidance.

    Regarding the company’s performance and returns to shareholders, Haviv Ilan, TI’s president and CEO, made the following comments:

    • “Revenue decreased 16% from the same quarter a year ago and increased 4% sequentially. Industrial and automotive continued to decline sequentially, while all other end markets grew.
    • “Our cash flow from operations of $6.4 billion for the trailing 12 months again underscored the strength of our business model, the quality of our product portfolio and the benefit of 300mm production. Free cash flow for the same period was $1.5 billion.
    • “Over the past 12 months we invested $3.7 billion in R&D and SG&A, invested $5.0 billion in capital expenditures and returned $4.9 billion to owners.
    • “TI’s third quarter outlook is for revenue in the range of $3.94 billion to $4.26 billion and earnings per share between $1.24 and $1.48. We continue to expect our effective tax rate to be about 13%.”

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