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STMicroelectronics has increased its revenue ambitions for the data center market, citing continued strong demand driven by AI infrastructure investments and recent progress in its capacity ramp-up efforts.
The company now expects data center revenues to reach approximately $1 billion in 2026, significantly higher than its previous expectation of “nicely above $500 million.” Based on current market dynamics and existing customer engagements, STMicroelectronics also indicated that data center revenues could double in 2027, compared with its earlier outlook of “well above $1 billion.”
The revised outlook reflects the growing demand for semiconductor solutions supporting AI infrastructure and data center applications, as well as the company’s ongoing efforts to expand manufacturing capacity to address this market opportunity.
STMicroelectronics noted that these projections are forward-looking statements and remain subject to a range of risks and uncertainties. These include potential changes in global trade policies, tariffs and sanctions, macroeconomic conditions, inflationary pressures, supply chain disruptions, fluctuations in customer demand, technological developments, geopolitical events, cybersecurity risks, availability of manufacturing resources, foreign exchange movements, regulatory developments, litigation, and other factors that could affect future business performance.
The company stated that actual results may differ materially from current expectations depending on how these and other risk factors evolve over time.
Original – STMicroelectronics
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STMicroelectronics has expanded its STPOWER portfolio with a new family of 700 V gallium nitride (GaN) power transistors designed to improve efficiency and increase power density in medium- and high-power applications.
The new enhancement-mode PowerGaN HEMTs target rapidly growing markets including AI servers, robotics, industrial power supplies, smart-grid infrastructure, and advanced electrification systems. By extending GaN technology into higher power levels, ST aims to address increasing performance demands that are challenging the limits of conventional silicon-based power solutions.
The new portfolio consists of seven devices with current ratings ranging from 6 A to 29 A and typical RDS(on) values between 53 mΩ and 270 mΩ. The devices leverage the inherent advantages of GaN technology, including low conduction losses, extremely low switching losses at high frequencies, low gate charge, and zero reverse recovery characteristics.
These features enable operation at significantly higher switching frequencies, allowing reductions in the size of magnetic components and passive elements while increasing overall power density and lowering system operating temperatures.
From a packaging standpoint, the devices are available in DPAK, TO-LL, and PowerFLAT surface-mount packages. TO-LL and PowerFLAT versions include Kelvin source connections that improve noise immunity, enhance gate-driver performance, and support cleaner switching behavior.
Original – STMicroelectronics
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STMicroelectronics has introduced two new 100 W VIPerGaN high-voltage converters, expanding the use of GaN-based power conversion across consumer electronics, smart home systems, appliances, and building automation applications.
The new VIPerGaN100W and VIPerGaN100WB integrate a 700 V GaN transistor, gate driver, and flyback controller into compact 5 mm × 6 mm QFN packages. The VIPerGaN100WB supports higher peak current capability, allowing short-term output power up to 125 W for applications with inductive loads such as motors and solenoid valves.
The integrated GaN power stage features ultra-low RDS(on), enabling improved thermal performance and higher efficiency. By leveraging the high switching frequencies enabled by GaN technology, the converters reduce passive component size and improve overall power density.
ST also demonstrated the technology through its EVLVIPGAN100WP 100 W USB Type-C Power Delivery 3.0 reference design, which achieves over 92% peak efficiency and a power density of 24 W/in³. The design supports multiple USB-PD output profiles from 5 V to 20 V.
Technically, the converters operate in quasi-resonant flyback mode with zero-voltage switching, incorporating advanced power management features such as valley skipping, frequency foldback, and burst-mode operation to optimize efficiency across varying load conditions. Standby power consumption is reduced below 30 mW.
The devices also integrate extensive protection functions, including overvoltage, overtemperature, and brown-in/brown-out protection, simplifying system-level design and improving reliability.
From a market perspective, this launch reflects the ongoing expansion of GaN beyond premium fast chargers into broader consumer and industrial power applications. By integrating GaN power devices and control circuitry into highly compact solutions, ST is lowering the barrier to adoption for mainstream OEMs seeking higher efficiency, reduced size, and lower standby power consumption.
The move also strengthens ST’s competitive position in the growing integrated GaN power IC market, where ease of design integration and cost-effective scalability are becoming increasingly important differentiators.
Original – STMicroelectronics
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STMicroelectronics reported solid financial results for the first quarter of 2026, reflecting improving demand conditions and early momentum from AI-driven applications.
The company posted net revenues of $3.10 billion, representing a 23.0% year-over-year increase, with gross margin at 33.8%. Operating income reached $70 million, while net income totaled $37 million, equivalent to $0.04 per diluted share. On a non-GAAP basis, profitability was stronger, with net income of $122 million and improved operating margins.
Performance was primarily driven by stronger revenues in personal electronics and customer engagement programs, along with a favorable product mix. The contribution from the acquired MEMS sensor business also supported growth, although underlying demand improvements were evident even excluding this factor.
From a market perspective, ST highlighted signs of recovery, including stronger bookings and normalized inventory levels across distribution channels, despite ongoing macroeconomic uncertainty.
Looking ahead, the company expects continued growth in Q2 2026, with projected revenues of approximately $3.45 billion at the midpoint, representing both sequential and year-over-year increases. Gross margin is expected to improve further to around 34.8%.
Strategically, ST emphasized its positioning in AI infrastructure as a key growth driver. The company expects data center-related revenues to exceed $500 million in 2026 and surpass $1 billion in 2027, supported by its portfolio spanning silicon, SiC, and GaN technologies.
From an industry standpoint, ST’s results reinforce a broader trend of recovery in semiconductor demand, led by AI, data centers, and high-performance applications. At the same time, margin performance indicates ongoing cost pressures and capacity utilization challenges, which remain key factors to monitor across the sector.
Original – STMicroelectronics
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STMicroelectronics announced the expansion of its 800 V DC power conversion portfolio with two new architectures: 800 V to 12 V and 800 V to 6 V, aligned with NVIDIA 800 V DC data center reference design. These new solutions complement the previously introduced 800 V to 50 V architecture and support the industry transition toward higher-efficiency, high-density AI infrastructure.
The move reflects the rapid evolution of AI data centers toward higher voltage distribution to reduce losses and improve scalability. By expanding to 12 V and 6 V intermediate rails, ST addresses different server architectures, GPU requirements and thermal constraints across hyperscale deployments.
The 800 V to 12 V conversion stage enables direct power delivery from rack-level systems to voltage domains used by advanced AI accelerators. By eliminating the traditional 54 V intermediate stage, it reduces conversion steps, lowers system losses and simplifies integration, contributing to improved overall rack efficiency and reduced copper usage.
The 800 V to 6 V architecture is designed for systems requiring power delivery closer to GPUs. This approach minimizes resistive losses and improves transient response, which is critical for high-performance AI training clusters and dense compute environments. It also enables further reduction in conversion stages, improving efficiency and system-level performance.
ST emphasized that 50 V, 12 V and 6 V intermediate buses will coexist depending on server design, GPU configuration and cooling strategies. This flexible approach allows system designers to optimize power delivery architectures based on specific application requirements.
The new solutions build on ST’s earlier demonstration of a GaN-based 800 V converter operating at 1 MHz with over 98 percent efficiency and power density exceeding 2,600 W/in³. The expanded portfolio integrates ST’s technologies across silicon, silicon carbide and gallium nitride power devices, along with analog, mixed-signal and microcontroller solutions, providing a complete ecosystem for next-generation AI server power architectures.
Original – STMicroelectronics
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STMicroelectronics has introduced MasterGaN6, marking the start of the second generation of its MasterGaN half-bridge family. The new power system-in-package combines an updated BCD driver with a high-performance GaN power transistor featuring 140 mΩ RDS(on), targeting compact, high-efficiency power conversion designs.
Building on the integration approach of the MasterGaN family, MasterGaN6 adds dedicated pins for fault indication and standby functionality to support smarter system management and improved power savings. The devices also integrate LDOs and a bootstrap diode, helping reduce external components while maintaining optimal gate-drive conditions.
ST said the updated driver is engineered for fast timing, enabling high-frequency operation through low minimum on-time and short propagation delays, which can help designers reduce circuit footprint. An ultra-fast wake-up time is also intended to improve burst-mode operation and support higher efficiency at light loads.
MasterGaN6 integrates protections including cross-conduction prevention, thermal shutdown and under-voltage lockout, supporting simplified layouts, smaller PCB designs and a lower bill of materials. The device is rated to handle up to 10 A and is aimed at consumer and industrial applications such as chargers, adapters, lighting power supplies and DC-to-AC solar micro-inverters. Its half-bridge configuration is positioned for multiple topologies, including active-clamp flyback (ACF), resonant LLC, inverse buck converters and power factor correction (PFC) circuits.
To support evaluation and design-in, ST has released the EVLMG6 evaluation board and added a MasterGaN6 model to the eDesignSuite PCB Thermal Simulator.
Original – STMicroelectronics
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STMicroelectronics announced an expanded strategic collaboration with Amazon Web Services (AWS) through a multi-year, multi-billion USD commercial engagement spanning several product categories. The agreement positions ST as a strategic supplier of semiconductor technologies and products that AWS will integrate into its compute infrastructure to support new high-performance compute instances, lower operational costs, and improved scalability for compute-intensive workloads, including AI and cloud applications.
Under the commercial arrangement, AWS will leverage a broad set of ST proprietary technologies. ST will supply solutions across high-bandwidth connectivity and high-performance mixed-signal processing, microcontrollers for intelligent infrastructure management, and analog and power ICs designed to improve energy efficiency in hyperscale data center operations. The collaboration is intended to help customers reduce total cost of ownership and accelerate time-to-market by addressing increasing requirements for compute performance, efficiency, and data throughput.
“This strategic engagement establishes ST as an important supplier to AWS and validates the strength of our innovation, proprietary technology portfolio, and proven manufacturing-at-scale capabilities,” said Jean-Marc Chery, President and CEO of STMicroelectronics. “Our advanced semiconductor solutions will directly power AWS’s next-generation infrastructure, enabling their customers to push the boundaries of AI, high-performance computing, and digital connectivity.”
As part of the expanded relationship, ST will also work with AWS to optimize electronic design automation (EDA) workloads in the cloud. AWS’s scalable compute capabilities are expected to help accelerate silicon design by enabling parallelized workloads and greater flexibility to match dynamic compute needs.
ST also issued warrants to AWS for the acquisition of up to 24.8 million ordinary shares of ST. The warrants will vest in tranches over the term of the agreement, with vesting substantially tied to payments for ST products and services purchased by AWS and its affiliates. AWS may exercise the warrants over a seven-year period from the issue date at an initial exercise price of $28.38.
Original – STMicroelectronics
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STMicroelectronics N.V. reported Q4 2025 net revenues of $3.33 billion, gross margin of 35.2%, and operating income of $125 million, which includes $141 million related to impairment, restructuring charges and other phase-out costs. The company recorded a GAAP net loss of $30 million, or -$0.03 diluted EPS. On a non-U.S. GAAP basis, operating income was $266 million and net income was $100 million, or $0.11 diluted EPS, including a negative one-time tax impact of $0.18 per share.
For full year 2025, net revenues were $11.80 billion with a gross margin of 33.9%. Operating income totaled $175 million, including $376 million related to impairment, restructuring and other phase-out costs. GAAP net income was $166 million. On a non-U.S. GAAP basis, operating margin was 4.7% and net income was $486 million. Net Capex (non-U.S. GAAP) was $1.79 billion and free cash flow (non-U.S. GAAP) was $265 million.
Management noted that Q4 revenue came in above the mid-point of guidance, driven by Personal Electronics and, to a lesser extent, CECP and Industrial, while Automotive trailed expectations. Gross margin exceeded the mid-point largely on favorable mix, and Q4 marked a return to year-over-year growth.
At the mid-point, Q1 2026 guidance calls for net revenues of $3.04 billion, down 8.7% sequentially—better than average past seasonality—and continuing the Y/Y growth trajectory that began in Q4. Gross margin is expected to be about 33.7%, including ~220 basis points of unused capacity charges. For 2026, the company plans to invest $2.0–$2.2 billion in Net Capex (non-U.S. GAAP).
Strategic priorities include accelerating innovation, executing the program to reshape the manufacturing footprint and resize the global cost base, and strengthening free cash flow generation.
Original – STMicroelectronics
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STMicroelectronics has been named to Clarivate’s Top 100 Global Innovators 2026—its second consecutive year and eighth time overall receiving the distinction. The annual benchmark recognizes organizations that consistently deliver high-impact inventions, setting the pace for invention quality, originality, and global reach.
“We are honored to be recognized as a Top 100 Innovator by Clarivate for 2026, marking our fifth consecutive year and eighth time overall receiving this distinction. This achievement underscores STMicroelectronics’ unwavering commitment to sustained, large-scale innovation in products and technologies, driven by the creativity and dedication of our global teams,” said Alessandro Cremonesi, Executive Vice President, Chief Innovation Officer, and General Manager, System Research and Applications. “As the pace of technological change accelerates, we work in open collaboration with customers and partners to develop disruptive semiconductor technologies and solutions in sensing, power and energy, connectivity, data communications, compute and edge AI, helping them turn ambitious ideas into market-defining solutions.”
ST invests significantly in R&D, with about 20% of employees dedicated to product design, development, and technology, in close collaboration with leading research labs and corporate partners worldwide. The company’s Innovation Office connects emerging market trends with internal technology expertise to identify opportunities and lead in new and existing domains. ST is recognized for leadership in smart power technologies, wide bandgap semiconductors, edge AI solutions, MEMS sensors and actuators, optical sensing, digital and mixed-signal technologies, and silicon photonics.
“Recognition as a Top 100 Global Innovator is a remarkable achievement given the pace of change. Multi-year winners and new entrants are investing in AI innovation as it redefines the boundaries between research, engineering and commercial execution,” said Maroun S. Mourad, President, Intellectual Property, Clarivate. “The leaders we celebrate today are not just responding to this shift, they are designing for it.”
The Top 100 Global Innovators analysis is underpinned by the Clarivate Center for IP and Innovation Research, leveraging the proprietary Derwent Strength Index—derived from the Derwent World Patents Index—to assess the influence, success, rarity, and investment behind inventions.
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STMicroelectronics has been named a Global Top Employer for 2026 by Top Employers Institute, marking the company’s second consecutive year receiving the certification.
This year, STMicroelectronics is one of only 17 organizations worldwide to earn Global Top Employer status. The recognition covers ST entities in 41 countries and reflects performance across Top Employers Institute’s HR Best Practices Survey, which assesses six domains: People Strategy, Work Environment, Talent Acquisition, Learning, Diversity, Equity & Inclusion, and Wellbeing, followed by rigorous validation and audit at both corporate and country levels.
“Top Employer is an annual certification, and its global renewal for the second consecutive year underscores ST’s commitment to best-in-class people practices. In a period marked by significant external challenges, the improved scores recognized by this certification highlight the strength of our HR strategy and our determination to offer an attractive and engaging work environment worldwide,” said Rajita D’Souza, President, Human Resources and Corporate Social Responsibility, STMicroelectronics.
“Achieving Global Top Employer status in 2026 is an extraordinary accomplishment that reflects excellence in individual countries and, crucially, sustained people practices across regions and worldwide,” said Adrian Seligman, CEO, Top Employers Institute. “STMicroelectronics has demonstrated a rare ability to align its people strategy globally while ensuring meaningful, locally relevant experiences for employees in every certified market—this achievement places STMicroelectronics among a select group of employers setting the benchmark for people strategy internationally.”
The global certification is the highest level of recognition offered by Top Employers Institute. Certified organizations gain access to globally benchmarked insights, data-driven recommendations, expert validation, and proven best practices that strengthen people strategy. Benefits include enhanced employer branding, clearer strategic focus, improved decision making, and stronger ability to demonstrate impact to leaders, boards, and talent markets, as well as opportunities to connect with a global community of certified Top Employers.
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