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STMicroelectronics N.V. disclosed further elements of its program to reshape its global manufacturing footprint. This comes as part of the program announced in October 2024 to further strengthen ST’s competitiveness, solidify its position as a global semiconductor leader, and ensure the long-term sustainability of its model as an Integrated Device Manufacturer by leveraging strategic assets globally across technology R&D, design and high-volume manufacturing.
Jean-Marc Chery, President and CEO of STMicroelectronics said: “The reshaping of our manufacturing footprint announced today will future proof our Integrated Device Manufacturer model with strategic assets in Europe and improve our ability to innovate even faster, benefitting all our stakeholders. As we focus on advanced manufacturing infrastructure and mainstream technologies, we will continue to leverage all of our existing sites and bring redefined missions for some of them to support their long-term success. We are committed to managing this program responsibly, according to our long-established values, and exclusively through voluntary measures. The technology R&D, design, and high-volume manufacturing activities in Italy and France will continue to be central to our global operations and will be reinforced via planned investments in mainstream technologies”.
Innovating and scaling up to increase efficiency across manufacturing operations
As innovation cycles shorten, ST’s manufacturing strategy is evolving to accelerate the delivery of innovative, proprietary technologies and products at scale to customers globally, across automotive, industrial, personal electronics and communication infrastructure applications.The reshaping and modernization of ST’s manufacturing operations aim to achieve two main objectives: prioritizing planned investments towards future-ready infrastructure such as 300mm silicon and 200mm silicon carbide wafer fabs to enable them to reach a critical scale and maximizing the productivity and efficiency of legacy 150mm capabilities and mature 200mm capabilities. In parallel, ST plans to continue to invest in upgrading the technology used across its operations, deploying additional AI and automation for additional efficiency in technology R&D, manufacturing, reliability and qualification processes, with a continued focus on sustainability.
Strengthening ST’s manufacturing ecosystem
Over the next three years, the reshaping of ST’s manufacturing footprint will design and strengthen ST’s complementary ecosystems: in France around digital technologies, in Italy around analog and power technologies and in Singapore on mature technologies. The optimization of these operations aim to achieve full capacity utilization and drive technological differentiation to compete globally. As announced previously, each of ST’s current sites will continue to play a long-term role within the company’s global operations.Building 300mm silicon megafabs in Agrate and Crolles
The Agrate (Italy) 300mm fab will continue to be scaled up, with the aim to become ST’s flagship high-volume manufacturing facility for smart power and mixed signal technologies. The plan is to double its current capacity to 4,000 wafers per week (wpw) by 2027, with planned modular expansions increasing capacity up to 14,000 wpw, depending on market conditions. As we increase our focus on 300mm manufacturing, the Agrate 200mm fab will refocus on MEMS.The Crolles (France) 300mm fab will be further cemented as the core of ST’s digital products ecosystem. The plan is to increase capacity to 14,000 wpw by 2027 with planned modular expansions increasing capacity up to 20,000 wpw, depending on market conditions. In addition, we will convert the Crolles 200mm fab to support Electrical Wafer Sorting high volume manufacturing and advanced packaging technologies, hosting activities that do not exist today in Europe. The focus will be on next-generation leading technologies including optical sensing and silicon photonics.
Specialized Manufacturing and Competence Center for Power Electronics in Catania
Catania will continue to serve as a center of excellence for power and wide-bandgap semiconductor devices. The development of the new Silicon Carbide Campus is progressing as planned, with production of 200mm wafers set to begin in Q4 2025, reinforcing ST’s leadership in next-generation power technologies. Our resources supporting Catania’s current 150mm and EWS capabilities will be refocused on 200mm silicon carbide and silicon power semiconductor production, including GaN-on-silicon, reinforcing ST’s leadership in next-generation power technologies.Optimizing Other Manufacturing Sites
Rousset (France) will remain focused on 200mm manufacturing, with additional volumes reallocated from other sites enabling full saturation of existing manufacturing capacity for optimized efficiency.Tours (France) will remain focused on its 200mm silicon production line for select technologies, while other activities – including legacy 150mm manufacturing activities – will be transferred to different ST sites, and it will also remain a center of competence for GaN, mainly on epitaxy. The Tours site will also host a new activity: panel-level-packaging, one of the major enablers of chiplets, a technology for complex semiconductor applications that will be key for ST in the future.
Ang Mo Kio (Singapore), ST’s high-volume fab for mature technologies, will remain focused on 200mm silicon manufacturing and will also host our consolidated global legacy 150mm silicon capabilities.
Kirkop (Malta), ST’s high-volume test and packaging fab in Europe will be upgraded, with the addition of advanced automated technologies which will be key to support next-generation products.
Workforce and skills evolution
As ST reshapes its manufacturing footprint over the next three years, the workforce size and required skill sets will evolve. Advanced manufacturing will shift roles from legacy processes involving repetitive manual tasks to a stronger focus on process control, automation, and design. ST will manage this transition through voluntary measures, with a continued commitment to ongoing constructive dialogue and negotiations with employee representatives in accordance with applicable national regulations. Based on current projections, the program is expected to see up to 2,800 people leaving the company globally on a voluntary basis, on top of normal attrition. These changes are expected to occur mainly in 2026 and 2027. Regular updates will be provided to stakeholders as the program progresses.Original – STMicroelectronics
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STMicroelectronics and Innoscience announced the signature of an agreement on GaN technology development and manufacturing, leveraging the strengths of each company to enhance GaN power solutions and supply chain resilience.
The companies have agreed on a joint development initiative on GaN power technology, to advance the promising future of GaN power for consumer electronics, datacenters, automotive and industrial power systems and many more applications in the coming years. In addition, the agreement allows Innoscience to utilize ST’s front-end manufacturing capacity outside China for its GaN wafers, while ST can leverage Innoscience’s front-end manufacturing capacity in China for its own GaN wafers. The common ambition is for each company to expand their individual offering in GaN with supply chain flexibility and resilience to cover all customers’ requirements in a wide range of applications.
Marco Cassis, President, Analog, Power & Discrete, MEMS and Sensors of STMicroelectronics declared: “ST and Innoscience are both Integrated Device Manufacturers, and with this agreement we will leverage this model to the benefit of our customers globally. First, ST will be accelerating its roadmap in GaN power technology to complement its silicon and silicon carbide offering. Second, ST will be able to leverage a flexible manufacturing model to serve customers globally.”
Dr. Weiwei Luo, Chairman and Founder of Innoscience, stated “GaN technology is essential to improve electronics, creating smaller and more efficient systems which save electric power, lower cost, and reduce CO2 Emissions. Innoscience pioneered mass production of 8-inch GaN technology and has shipped over 1 billion GaN devices into multiple markets, and we are very excited to move into strategic collaboration with ST. The joint collaboration between ST and Innoscience will further expand and accelerate the adoption of GaN technology. Together the teams at Innoscience and ST will develop the next generations of GaN technology”.
GaN power devices leverage fundamental material properties that enable new standards of system performance in power conversion, motion control, and actuation, offering significantly lower losses, which allows for enhanced efficiency, smaller size, and lighter weight, thus reducing the overall solution cost and carbon footprint; these devices are rapidly being adopted in consumer electronics, data center and industrial power supplies, and solar inverters, and are being actively designed into next-generation EV powertrains due to their substantial size and weight reduction benefits.
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STMicroelectronics announced its financial results for the fourth quarter and full year of 2024, highlighting both its revenue performance and future strategic initiatives. In Q4 2024, the company reported net revenues of $3.32 billion, a gross margin of 37.7%, and an operating margin of 11.1%. Net income for the quarter stood at $341 million, reflecting ST’s ability to maintain profitability despite a challenging macroeconomic environment.
For the full year, ST achieved net revenues of $13.27 billion, a gross margin of 39.3%, and an operating margin of 12.6%, with a total net income of $1.56 billion. While the semiconductor industry faced fluctuations in demand, ST maintained solid financials, supported by its diversified portfolio across automotive, industrial, and consumer electronics markets.
Looking ahead to Q1 2025, the company projects net revenues of approximately $2.51 billion and anticipates a gross margin of 33.8%. This outlook suggests a seasonal decline in revenue compared to Q4, but aligns with broader industry trends.
In response to shifting market conditions, ST has initiated a cost-resizing program to optimize its global operational efficiency. This includes measures to streamline expenses, enhance supply chain resilience, and align production capacities with evolving customer demand. The company is also expected to continue investing in next-generation semiconductor technologies, particularly in power electronics, automotive chips, and industrial applications.
CEO Jean-Marc Chery reaffirmed ST’s commitment to long-term growth and sustainability, emphasizing its focus on innovation and cost discipline.
With strategic investments and market adaptability, STMicroelectronics aims to navigate industry challenges while reinforcing its leadership in the semiconductor sector.
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STMicroelectronics announced that its Supervisory Board has agreed to propose for shareholders’ approval at the Company’s 2025 Annual General Meeting the appointment of Werner Lieberherr to the Supervisory Board of ST, in replacement of Janet Davidson whose mandate will expire at the end of the 2025 AGM.
Werner Lieberherr has successfully led global companies in energy, aviation and automotive in the United States, Asia, Europe and Switzerland, most recently at Landis+Gyr AG, an integrated energy management solutions provider, as Chief Executive Officer.
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STMicroelectronics has been recognized for the first time as a global Top Employer for 2025 by Top Employers Institute.
This year STMicroelectronics was one of only 17 global Top Employers to be recognized by Top Employers Institute for their outstanding HR policies and practices worldwide, covering ST entities in 41 countries. The Top Employers Institute program certifies organizations based on the participation and results of their HR Best Practices Survey. STMicroelectronics was distinguished in this ranking thanks to a continuous improvement approach and stands out particularly in the themes of Ethics & Integrity, Purpose & Values, Organization & Change, Business Strategy, and Performance.
“A couple of years ago, we began a people-centric transformation to enhance our leadership culture, simplify and digitalize people processes, with the employee journey and experience as our north star. Achieving the Top Employer Global certification confirms that our efforts are well-directed, and that ST is a place where every talent can thrive, regardless of their career stage or perspective,” said Rajita D’Souza, President, Human Resources & Corporate Social Responsibility, STMicroelectronics.
“We’re excited that STMicroelectronics certified as a global Top Employer for the first time. They have particularly showcased their strengths in areas such as Organisation & Change, Ethics & Integrity, Purpose & Values and Business Strategy. This Certification shows ST’s commitment to creating a better world of work through their HR initiatives and practices, by demonstrating how they support their colleagues across 41 countries,” said David Plink, CEO Top Employers Institute.
The Top Employers Institute survey, followed by validation and audit, covers six HR domains consisting of 20 topics including People Strategy, Work Environment, Talent Acquisition, Learning, Diversity & Inclusion, Wellbeing and more. The program has certified and recognized over 2,400 Top Employers in 125 countries/regions across five continents.
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Ampere, the intelligent electric vehicle pure player born from Renault Group and STMicroelectronics announced the next step in their strategic co-operation, starting in 2026, with a multi-year agreement between STMicroelectronics and Renault Group on the supply of Silicon Carbide (SiC) power modules, as part of their collaboration on a powerbox for the inverter for Ampere’s ultra-efficient electric powertrain.
Ampere and STMicroelectronics worked together on the optimization of the power module, the key element in the powerbox, to get the highest performance and best competitiveness in the e-powertrain, leveraging Ampere’s expertise in EV technology and STMicroelectronics’ expertise in advanced power electronics.
“This agreement is the result of the intensive work carried out with STMicroelectronics. By working upstream together, we were able to optimize and secure the supply of key components for our electric powertrains, to offer high performance EVs with increased range and optimized charging time. It perfectly aligns with Ampere’s strategy to master the entire value chain of power electronics for its e-powertrain, leveraging STMicroelectronics’ expertise in power modules,” said Philippe Brunet, SVP Powertrain & EV engineering, Ampere.
“ST is at the cutting edge of the development of advanced power electronics enabling the mobility industry to improve the performance of electrified platforms. With the optimization of these higher-efficient products and solutions to meet Ampere’s performance requirements, and our vertically integrated silicon carbide supply chain, we are supporting Ampere’s strategy for its next generation of electric powertrain,” said Michael Anfang, Executive Vice President Sales & Marketing, Europe, Middle East and Africa Region, STMicroelectronics. “ST and Ampere share a common vision for more sustainable mobility and this agreement marks another step forward in improved power performance to further contribute to concrete improvements to carbon emissions reduction by the mobility industry and its supply chain.”
Power modules, composed of numerous silicon carbide chips, manage and convert electrical power from the battery to drive the electric motor. They play a crucial role in the efficiency of the electric powertrain and battery range, as well as energy regeneration features, making them a key element of the efficiency of an electric car. They also contribute to the smoothness and responsiveness of driving.
STMicroelectronics and Ampere have collaborated on a powerbox for the supply of energy to Ampere’s new generation of electric motors. The powerbox is designed for optimum performance-size ratio across Ampere’s line-up, on 400 Volt battery EV vehicles and for Segment C-EVs with 800 Volt batteries, enabling greater autonomy and faster charging. 800 Volts is one of the key levers to achieve the 10%-80% quick charge in 15 minutes or less. This agreement is fully aligned with Ampere’s strategy to master the entire value chain of the electric vehicle, particularly by working further upstream with its partners and ensuring the best efficiency at each step.
As an integrated device manufacturer (IDM), STMicroelectronics ensures quality and security of supply to serve carmakers’ strategies for electrification. The collaboration with Ampere on the silicon carbide power modules and powerbox demonstrates STMicroelectronics’ leadership and system level experience of advanced power electronics, including its packaging expertise.
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STMicroelectronics hosted its Capital Markets Day in Paris, France. Within the framework of an unchanged strategy, ST is reiterating its $20 billion plus revenue ambition and associated financial model, that it now expects to be reached by 2030. ST is also setting an intermediate financial model with revenues expected around $18 billion with an operating margin within a 22% to 24% range in 2027-2028.
With the execution of its manufacturing reshaping program and cost base resizing initiative, ST expects to exit 2027 with high triple-digit million-dollar savings compared to the current cost base. This will enable the company to reach an operating margin between 22 and 24% in 2027-2028.
ST’s value proposition remains focused on sustainable and profitable growth, providing differentiating enablers to customers with a strong commitment to sustainability. With its customers and partners, ST will continue to be a key actor of the transformation of all industries towards a smarter, safer and more sustainable future.
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LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / WBGSTMicroelectronics Released an Advanced Galvanically Isolated Gate Drivers for IGBTs and SiC MOSFETs
November 7, 2024
2 Min ReadSTMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimized desaturation protection and flexible Miller-clamp architecture.
Featuring reinforced capacitive galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry, the STGAP3S withstands 9.6kV transient isolation voltage (VIOTM) with 200V/ns common-mode transient immunity (CMTI). With its state-of-the-art isolation, the STGAP3S enhances reliability in motor drives for industrial applications such as air conditioning, factory automation, and home appliances. The new drivers are also used in power and energy applications including charging stations, energy storage systems, power-factor correction (PFC), DC/DC converters, and solar inverters.
The STGAP3S product family includes different options with 10A and 6A current capability, each of them available with differentiated Under Voltage Lock-Out (UVLO) and desaturation intervention thresholds. This helps designers select the best device to match the performance of their chosen SiC MOSFET or IGBT power switches.
The Desaturation protection implements an overload and short-circuit protection for the external power switch providing the possibility to adjust the turn-off strategy using an external resistor to maximize the protection turn-off speed while avoiding excessive overvoltage spikes. The undervoltage-lockout protection prevents turn-on with insufficient drive voltage.
The driver’s integrated Miller Clamp architecture provides a pre-driver for an external N-channel MOSFET. Designers can thus leverage flexibility to select a suitable intervention speed that prevents induced turn-on and avoids cross conduction.
The available device variants allow a choice of 10A sink/source and 6A sink/source drive-current capability for optimum performance with the chosen power switch with desaturation-detection and UVLO thresholds optimized for IGBT or SiC technology. The fault conditions of desaturation, UVLO and overtemperature protection are notified with two dedicated open drain diagnostic pins.
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STMicroelectronics inaugurated its new design and industrialization center, equipped with a test lab, in Pisa Montacchiello, Italy. The CEO of STMicroelectronics Italy, Lucio Colombo, and the Rector of the University of Pisa, Riccardo Zucchi, cut the ribbon of the new center, the thirteenth ST site in Italy and the first in Tuscany.
The center, built in collaboration with professors from the University of Pisa’s Department of Information Engineering, currently houses around 40 people mainly dedicated to the design and industrialization of integrated circuits. They include analog and digital designers with different skills, together with researchers and thesis students from the University of Pisa.
Most of the designers belong to ST’s APMS Product Group’s Analog Custom Devices (ACD) division, which works on the design and development of products for the consumer electronics market. In particular, the Pisa team of the ACD division focuses on products for wireless charging and power management. Their goal is to identify and implement innovative solutions to improve the efficiency of battery-powered devices like smartphones. The center is equipped with a test lab to carry out the validation and industrialization of the products developed on-site.
In addition to inaugurating and visiting the center, Riccardo Zucchi and Lucio Colombo signed a framework agreement, the purpose of which is to – support the training of qualified students and graduates by collaborating on teaching courses for the University and by setting up scholarships in line with current regulations;
– contribute to studies and research focused on technological innovation within the center’s areas of expertise and interest;
– to uphold the high cultural standards of its operators and promote their professional development through meaningful contacts and cooperation with the University through courses guaranteed by the University.“The Pisa Center was born 20 months ago with the aim of growing quickly by acquiring talent in the area, thanks to the collaboration with the University of Pisa, but also by attracting talent eager to return to Tuscany in search of the job opportunities offered by a global leader,” said Lucio Colombo, CEO of STMicroelectronics Italy. “This is a model that ST has applied over the years at Italian universities close to its research and production centers.”
“The goal was to reach around 40 employees in two years and to date we are satisfied with the progress made. The Center relies on electronics engineers with mixed skills: analog/digital/software and testing, and with different seniority, together with researchers and thesis students,” explains Patrizia Milazzo, ACD Director, STMicroelectronics. “We believe that the rapid development of the center was made possible through the great collaboration with the University and the determination of ST colleagues, who were strongly dedicated to creating a center of excellence in Tuscany.”
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STMicroelectronics N.V. (“ST”) reported U.S. GAAP financial results for the third quarter ended September 28, 2024. ST reported third quarter net revenues of $3.25 billion, gross margin of 37.8%, operating margin of 11.7%, and net income of $351 million or $0.37 diluted earnings per share. Jean-Marc Chery, ST President & CEO, commented:
- “Q3 net revenues were in line with the midpoint of our business outlook range. Our revenues, compared to our expectations, were higher in Personal Electronics, declined less in Industrial and were lower in Automotive. Q3 gross margin of 37.8% was broadly in line with the mid-point of our business outlook range.”
- “First nine months net revenues decreased 23.5% year-over-year across all reportable segments, particularly in Microcontrollers, which is impacted by a continuing weakness in the Industrial market. Operating margin was 13.1% and net income was $1.22 billion.”
- “Our fourth quarter business outlook, at the mid-point, is for net revenues of $3.32 billion, decreasing yearover-year by 22.4% and increasing sequentially by 2.2%; gross margin is expected to be about 38%, impacted by about 400 basis points of unused capacity charges.”
- “The midpoint of this outlook translates into full year 2024 revenues of about $13.27 billion, representing a 23.2% year-over-year decrease, in the low-end of the range indicated in the previous quarter, and a gross margin slightly below that provided in such indication.”
- “Based on our current customer order backlog and demand visibility, we anticipate a revenue decline between Q4 2024 and Q1 2025 well above normal seasonality.”
- “We are launching a new company-wide program to reshape our manufacturing footprint accelerating our wafer fab capacity to 300mm Silicon (Agrate and Crolles) and 200mm Silicon Carbide (Catania) and resizing our global cost base. This program should result in strengthening our capability to grow our revenues with an improved operating efficiency resulting in annual cost savings in the high triple-digit million-dollar range exiting 2027.”
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