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ROHM Co., Ltd. has announced that its EcoGaN™ power stage IC has been adopted in the AC adapter developed by Delta Electronics for MSI’s high-performance products, including gaming laptops. The collaboration brings together ROHM’s advanced GaN technology and Delta’s expertise in power supply design to deliver compact, energy-efficient power adapters tailored for demanding computing environments.
The AC adapter features ROHM’s BM3G005MUV-LB, a high-speed switching power stage IC with low ON resistance. Integrated into Delta’s latest adapter design, this solution achieves significant size reduction and energy savings compared to traditional silicon-based adapters, while maintaining high power output and performance stability under heavy loads—an essential requirement for gaming laptops equipped with powerful GPUs and CPUs.
As power demands rise in gaming and edge computing devices, GaN technology is gaining prominence due to its ability to improve efficiency and reduce system size. ROHM’s EcoGaN™ power stage IC integrates a 650V GaN HEMT, gate driver, protection circuitry, and peripheral components into a single compact package. This simplifies the design process and enables maximum GaN HEMT performance by directly replacing conventional silicon MOSFETs.
“The combination of Delta’s state-of-the-art power supply solutions and ROHM’s EcoGaN™ power stage IC has enabled high power delivery, optimal energy efficiency, and miniaturization in this AC adapter for gaming laptops,” said Red Lin, General Manager of the Edge Computing Power Business Unit at Delta Electronics, Inc. “We are proud that this solution has been adopted in MSI’s products, a globally recognized brand.”
Satoru Nate, Division Manager of the Power GaN Solution & Product Development Division at ROHM Co., Ltd., added, “Delta Electronics and ROHM have long collaborated in the field of power systems. This successful adoption reflects the strength of combining Delta’s design capabilities with ROHM’s device innovation. We aim to continue contributing to the miniaturization and efficiency of power systems across gaming, servers, industrial, and automotive applications.”
The integration of ROHM’s EcoGaN™ technology into consumer-grade power solutions marks a significant step in advancing the adoption of GaN devices in compact, high-efficiency applications.
Original – ROHM
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ROHM Semiconductor is celebrating three decades of collaboration with Micronetics, marking a significant milestone in one of its longest-standing and most successful distribution partnerships in Europe. This 30-year relationship highlights a shared commitment to innovation, reliability, and customer satisfaction — values that have driven mutual growth and enduring success.
Founded in 1979, Micronetics is a leading German distributor of electronic components, serving customers across Europe with a portfolio of more than 40,000 active, passive, and electromechanical components. With over 18,000 items available from stock, the company ensures exceptional product availability, backed by a modern logistics center and ISO 9001:2015-certified quality management system.
Micronetics has been a key distributor of ROHM products for decades, maintaining one of the largest inventories of ROHM components in the region. This strong stocking strategy has played a vital role in ensuring high product availability and short lead times for customers, strengthening ROHM’s position in the German market.
“Our prosperous partnership with ROHM has always been built on shared values: quality, innovation, reliability, and above all, mutual trust,” said Angela Kleiter, CEO of Micronetics.
“Micronetics has been a cornerstone of our distribution network in Germany,” added Wolfram Harnack, President of ROHM Semiconductor Europe. “Their technical expertise, customer dedication, and proactive stocking strategy have made them an invaluable partner. We are proud to celebrate this 30-year journey together and look forward to many more years of shared success.”
Over the years, ROHM has consistently ranked among the top semiconductor suppliers at Micronetics by sales, reflecting the strength of the partnership and the continued demand for ROHM’s high-quality components.
As both companies celebrate this important anniversary, ROHM and Micronetics reaffirm their joint commitment to delivering superior semiconductor technologies, reliable supply, and excellent customer service to support innovation across Europe’s electronics industry.
Original – ROHM
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ROHM has published a new white paper exploring advanced semiconductor solutions that enable the next generation of AI data centers powered by the 800 VDC architecture. The paper highlights ROHM’s role as a leading innovator in wide bandgap technologies and system-level power design for large-scale, energy-efficient computing infrastructure.
Developed as part of ROHM’s ongoing collaboration with NVIDIA and other industry partners, the white paper outlines strategies for implementing 800 VDC power distribution across AI data centers—a shift expected to transform data center design by enhancing efficiency, scalability, and sustainability.
The 800 VDC architecture supports the evolution of gigawatt-scale AI factories by significantly improving power density and reducing conversion losses. ROHM’s broad portfolio of silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) power devices, combined with its analog IC expertise, positions the company to deliver optimized solutions for each stage of power conversion.
The paper details how the traditional AC-DC conversion process, typically performed inside server racks, can be relocated to a centralized power rack under the 800 VDC system. This approach simplifies design, improves thermal performance, and allows higher-density configurations for GPU-heavy AI workloads.
ROHM’s EcoSiC™ and EcoGaN™ device families are featured prominently as key enablers of this transition. The EcoSiC™ series provides industry-leading low on-resistance and top-side cooling modules for high-power AI servers, while the EcoGaN™ series integrates GaN performance with ROHM’s proprietary analog IC technologies, including Nano Pulse Control™, enabling fast, precise, and stable high-frequency operation.
Through collaborations with NVIDIA, Delta Electronics, and data center operators, ROHM continues to drive innovation in wide bandgap semiconductors and analog control technologies. Its new white paper underscores the company’s commitment to building efficient, reliable, and sustainable AI data center infrastructure based on 800 VDC power delivery systems.
Original – ROHM
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ROHM Semiconductor GmbH has announced the appointment of Dr. Christian Felgemacher as Director of Application Engineering, effective October 1, 2025. In his new role, Dr. Felgemacher will oversee the operational coordination of technical customer support while shaping the strategic direction of ROHM’s application engineering activities across Europe.
Since joining ROHM in 2017, Dr. Felgemacher has played a key role in establishing the company’s Application and Technical Solution Center (ATSC), where he led the creation of the Power Lab and the development of customer-oriented technical solutions. As Senior Department Manager of Application Engineering, he successfully guided the Technical Consulting and Customer Support division and strengthened collaboration with major industry and academic partners.
Under his leadership, ROHM expanded its activities in automotive, industrial, and energy markets, with a strong focus on silicon carbide (SiC) technologies and inverter development.
“Dr. Felgemacher has demonstrated exceptional leadership and technical expertise throughout his career at ROHM,” said Wolfram Harnack, President of ROHM Europe. “He is ideally suited to further enhance our engineering capabilities and support our customers with innovative and reliable solutions.”
Commenting on his new role, Dr. Felgemacher stated, “I am excited to take on this leadership position and continue advancing ROHM’s mission of technical excellence. Together with our team of experts, we will strengthen strategic customer projects and drive the company’s growth in Europe.”
Original – ROHM
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Infineon Technologies AG and ROHM Co., Ltd. have signed a Memorandum of Understanding to collaborate on packages for silicon carbide (SiC) power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems and AI data centers.
Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from both Infineon and ROHM. The collaboration will ensure seamless compatibility and interchangeability to match specific customer needs.
“We are excited about working with ROHM to further accelerate the establishment of SiC power switches,” said Dr. Peter Wawer, Division President Green Industrial Power at Infineon. “Our collaboration will provide customers with a wider range of options and greater flexibility in their design and procurement processes, enabling them to develop more energy-efficient applications that will further drive decarbonization.”
“ROHM is committed to providing customers with the best possible solutions. Our collaboration with Infineon constitutes a significant step towards the realization of this goal, since it broadens the portfolio of solutions,” said Dr. Kazuhide Ino, Member of the Board, Managing Executive Officer, in charge of Power Devices Business at ROHM. “By working together, we can drive innovation, reduce complexity and increase customer satisfaction, ultimately shaping the future of the power electronics industry.”
As part of the agreement, ROHM will adopt Infineon’s innovative top-side cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon’s top-side cooling platform offers several benefits, including a standardized height of 2.3 mm for all packages. This facilitates designs and reduces system costs for cooling, while also enabling better board space utilization and up to two times more power density.
At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM’s advanced DOT-247 delivers higher power density and reduces assembly effort compared to standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables to reduce thermal resistance by approximately 15 percent and inductance by 50 percent compared to the TO-247. The advantages bring 2.3 times higher power density than the TO-247.
Infineon and ROHM plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and gallium nitride (GaN). This will further strengthen the relationship between the two companies and provide customers with an even broader range of solutions and sourcing options.
Semiconductors based on SiC have improved the performance of high-power applications by switching electricity even more efficiently, enabling high reliability and robustness under extreme conditions, while allowing for even smaller designs. Using Infineon’s and ROHM’s SiC products, customers can develop energy-efficient solutions and increase power density for applications such as electric vehicle charging, renewable energy systems and AI data centers.
Original – Infineon Technologies
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ROHM has launched the new DOT-247 package — a 2-in-1 SiC molded power module designed to meet the evolving demands of industrial applications such as photovoltaic (PV) inverters, uninterruptible power supplies (UPS), and semiconductor relays. Available in two topologies, half-bridge and common-source (SCZ40xxDTx, SCZ40xxKTx), the DOT-247 retains the versatility of the popular TO-247 package while offering significantly enhanced power density and design flexibility.
By combining two TO-247 packages into a single molded module, the DOT-247 accommodates larger SiC chips that were previously difficult to integrate. This structure reduces on-resistance and achieves improved thermal and electrical performance. Compared to a conventional TO-247 package, the DOT-247 lowers thermal resistance by approximately 15% and inductance by about 50%. In half-bridge configurations, this translates to 2.3 times higher power density, enabling the same power output in roughly half the volume.
The DOT-247 package is well-suited for advanced multi-level circuit topologies that are becoming more common in high-voltage PV systems, including three-level NPC, three-level T-NPC, and five-level ANPC architectures. These designs often require both half-bridge and common-source topologies, which can necessitate custom solutions when using traditional discrete SiC devices.
ROHM addresses this need by offering both topologies in standardized 2-in-1 modules, simplifying system design and integration. These modules allow engineers to reduce component count, shrink mounting area, and streamline the development of complex converter systems such as NPC circuits and DC-DC converters.
The DOT-247 SiC modules provide a compact, scalable path toward higher efficiency and miniaturization in next-generation industrial power applications.
Original – ROHM
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ROHM and Schaeffler have started mass production of a new high-voltage inverter brick equipped with ROHM’s SiC (silicon carbide) MOSFET bare chips as part of their strategic partnership. The inverter brick is intended for a major Chinese car manufacturer.
The Schaeffler inverter subassembly is the essential power device building block (brick) to control the electric drive via logic signals. This is where the high-frequency current pulses are produced that set the vehicle’s electric motor in motion. The performance characteristics of the inverter brick now being produced are impressive: Schaeffler increased the output of the brick by increasing the maximum possible battery voltage to much more than the usual 800 V – and with RMS currents of up to 650 A, which turn the sub-module into a compact power pack.
“Through our strategic approach of incorporating scalability and modularity into our e-mobility solutions – from individual components to a highly integrated electric axle – we developed the readily integrated inverter brick. Based on our generic platform development, it took us just one year to bring this optimal product for the popular X-in-1 architectures to volume production readiness,” says Thomas Stierle, CEO of the E-Mobility Division at Schaeffler.
As a core component of an inverter, a brick has to meet strict requirements. The characteristics of the sub-module are indicative of the factors behind the current sales success and start of volume production: ROHM’s silicon carbide (SiC) power semiconductors enable the frame-mounted sub-module with high power density to be compact, efficient, and readily integrated into various inverters through its modular and scalable design. The sub-module incorporates the power module for pulse width modulation (PWM) of the current pulses, the DC link capacitor, a DC link and a cooler. Moreover, the brick has a DC boost function, thanks to which a vehicle with 800 V architecture can also be charged at a 400 V charging station at a charging speed of 800 V.
“We are glad about the launch of volume production for Schaeffler’s inverter brick with our 4th generation SiC MOSFET,” says Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM. “With our SiC technology we are making a substantial contribution to increasing the efficiency and performance of electric cars. Working with Schaeffler as our partner, we are thus fostering innovation and sustainability in the automotive industry,” Dr. Ino adds.
The strategic partnership of Schaeffler (originally initiated under Vitesco Technologies) with ROHM has existed since 2020 and serves to secure capacity for energy-efficient SiC power semiconductors.
Original – ROHM
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LATEST NEWS / SiC / WBGROHM Unveils Level 3 SPICE Models for SiC MOSFETs with 50% Faster, High-Accuracy Circuit Simulations
July 10, 2025
1 Min ReadROHM has announced the release of new Level 3 (L3) SPICE models that deliver significantly improved convergence and faster simulation performance.
Since power semiconductor losses greatly impact overall system efficiency, simulation accuracy during the design phase is critical. ROHM’s earlier Level 1 SPICE models for SiC MOSFETs addressed this need by precisely replicating key device characteristics. However, challenges such as simulation convergence issues and prolonged computation times revealed the need for further refinement.
The new L3 models utilize a simplified approach that maintains both computational stability and accurate switching waveforms while reducing simulation time by approximately 50% compared to the L1 models. This allows for high-accuracy transient analysis of the entire circuits at significantly faster speed, streamlining device evaluation and loss assessment in the application design phase.
As of April 2025, ROHM has released 37 L3 models for its 4th Generation SiC MOSFETs, available for download directly from the Models & Tools section of each product page. The L1 models will continue to be offered alongside the new versions. A comprehensive white paper is also provided that facilitates model adoption.
Original – ROHM
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ROHM has released a 100V power MOSFET – RY7P250BM – optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring battery protection to the market.
As AI technology rapidly advances, data centers are facing unprecedented processing demands and server power consumption continues to increase annually. In particular, the growing use of generative AI and high-performance GPUs has created a need to simultaneously improve power efficiency while supporting higher currents. To address these challenges, the industry is shifting from 12V systems to more efficient 48V power architectures. Furthermore, in hot-swap circuits used to safely replace modules while servers remain powered on, MOSFETs are required that offer both wide SOA (Safe Operating Area) and low ON-resistance to protect against inrush current and overloads.
The RY7P250BM delivers these critical characteristics in a compact 8080-size package, helping to reduce power loss and cooling requirements in data centers while improving overall server reliability and energy efficiency. As the demand for 8080-size MOSFETs grows, this new product provides a drop-in replacement for existing designs. Notably, the RY7P250BM achieves wide SOA (VDS=48V, Pw=1ms/10ms) ideal for hot-swap operation. Power loss and heat generation are also minimized with an industry-leading low ON-resistance of 1.86mΩ (VGS=10V, ID=50A, Tj=25°C), approximately 18% lower than the typical 2.28mΩ of existing wide SOA 100V MOSFETs in the same size.
Wide SOA tolerance is essential in hot-swap circuits, especially those in AI servers that experience large inrush currents. The RY7P250BM meets this demand, achieving 16A at 10ms and 50A at 1ms, enabling support for high-load conditions conventional MOSFETs struggle to handle.
ROHM’s new product has also been certified as a recommended component by leading global cloud platform provider, where it is expected to gain widespread adoption in next-generation AI servers. Especially in server applications where reliability and energy efficiency are mission-critical, the combination of wide SOA and low RDS(on) has been highly evaluated for cloud infrastructure.
Going forward, ROHM will continue to expand its lineup of 48V-compatible power solutions for servers and industrial equipment, contributing to the development of sustainable ICT infrastructure and greater energy savings through high-efficiency, high-reliability products.
Original – ROHM
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ROHM has developed an isolated gate driver IC – the BM6GD11BFJ-LB. It is designed specifically for driving HV-GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions – contributing to greater miniaturization and efficiency in high-current applications such as motors and server power supplies.
As global energy consumption continues to grow, energy-saving initiatives have become a shared global priority. Motors and power supplies alone are estimated to account for approx. 97% of the world’s total electricity consumption. Achieving higher efficiency in these systems is increasingly dependent on utilizing wide bandgap devices such as SiC and GaN to control and convert electricity more efficiently.
Leveraging expertise in developing isolated gate driver ICs for silicon semiconductors and SiC devices, ROHM has introduced this new IC as the first in a series of isolated gate driver solutions optimized for GaN devices. Safe signal transmission is achieved by isolating the device from the control circuitry during switching operations that involve rapid voltage rise and fall cycles.
The BM6GD11BFJ-LB utilizes proprietary on-chip isolation technology to reduce parasitic capacitance, enabling high-frequency operation up to 2MHz. This maximizes the high-frequency switching capabilities of GaN devices. This contributes not only to greater energy efficiency and performance in applications but also reduces mounting area by minimizing the size of peripheral components.
At the same time, CMTI (Common-Mode Transient Immunity – an indicator of noise tolerance in noise isolated gate driver ICs) has been increased to 150V/ns – 1.5 times higher than conventional products – preventing malfunctions caused by the high slew rates typical of GaN HEMT switching. The minimum pulse width has also been reduced to just 65ns, 33% less than conventional products. These performance improvements allow for stable, reliable operation at higher frequencies while minimizing power loss through better duty cycle control.
With a gate drive voltage range of 4.5V to 6.0V and an isolation voltage of 2500Vrms, the BM6GD11BFJ-LB is designed to fully support a wide range of high-voltage GaN devices, including ROHM’s newly added 650V EcoGaN™ HEMT. The industry-leading low output-side current consumption of 0.5mA (Max) also reduces standby power, improving overall system efficiency.
The BM6GD11BFJ-LB is now available. It is offered through online distributors such as DigiKey™, Mouser™ and Farnell™. The sample price is $4.0/unit (excluding tax).
Going forward, ROHM plans to offer gate driver ICs for GaN device control together with GaN device products, supporting simpler application design.
Original – ROHM
