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ROHM has announced that the EcoGaN™ series of 650V GaN HEMTs in the TOLL package has been adopted for AI server power supplies by Murata Power Solutions, a subsidiary of the Murata Manufacturing Group and a leading supplier of electronic components, batteries and power supplies in Japan. Integrating ROHM’s GaN HEMTs, which combine low loss operation with high-speed switching performance, in Murata Power Solutions’ 5.5kW AI server power supply unit achieves greater efficiency and miniaturization. Mass production of this power supply unit is set to begin in 2025.
Rapid advancements in IoT-related fields such as AI and AR (Augmented Reality) have led to a surge in global data traffic in recent years. Notably, the power consumption for a single AI-generated response is estimated to be several times higher than that of a standard Internet search, highlighting the need for more efficient AI power supplies. Meanwhile, GaN devices, known for low ON resistance and high-speed switching performance, are gaining attention for their ability to enhance power supply efficiency while reducing the size of peripheral components such as inductors used in power circuits.
Dr. Joe Liu, Technical Fellow, Murata Power Solutions
“We are pleased to have successfully designed AI server power supply units featuring higher efficiency and power density by incorporating ROHM’s GaN HEMTs. The high-speed switching capability, low parasitic capacitance, and zero reverse recovery characteristics of GaN HEMTs help minimize switching losses. This allows for higher operating frequencies in switching converters, reducing the size of magnetic components. ROHM’s GaN HEMTs deliver competitive performance and exceptional reliability, yielding excellent results in the development of Murata Power Solutions’ 5.5kW AI server power supply units. Going forward, we will continue our collaboration with ROHM, a leader in power semiconductors, to improve the efficiency of power supplies and address the social issue of increasing power demand.”
Yuhei Yamaguchi, General Manager, Power Stage Product Development Div., LSI Business Unit, ROHM Co., Ltd.
“We are delighted that ROHM’s EcoGaN™ products have been integrated into AI server power supply units from Murata Power Solutions, a global leader in power supplies. The GaN HEMTs used in this application provide industry-leading switching performance in a high heat dissipation TOLL package, enhancing power density and efficiency in Murata Power Solutions’ power supply units. We look forward to strengthening our partnership with Murata Manufacturing, a company that shares the similar vision of contributing to society through electronics – promoting the miniaturization and efficiency of power supplies to enrich people’s lives.”
Original – ROHM
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ROHM has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package: the GNP2070TD-Z. Featuring a compact design with excellent heat dissipation, high current capacity, and superior switching performance, the TOLL package is increasingly being adopted in applications that require high power handling, particularly inside industrial equipment and automotive systems. For this launch, package manufacturing has been outsourced to ATX SEMICONDUCTOR (WEIHAI) CO., LTD., an experienced OSAT (Outsourced Semiconductor Assembly and Test) provider.
Improving the efficiency of motors and power supplies, which account for most of the world’s electricity consumption, has become a significant challenge to achieving a decarbonized society. As power devices are key to improve efficiency, the adoption of new materials such as SiC (Silicon Carbide) and GaN is expected to further enhance the efficiency of power supplies.
ROHM began mass production of its 1st generation of its 650V GaN HEMTs in April 2023, followed by the release of power stage ICs that combine a gate driver and 650V GaN HEMT in a single package. This time, ROHM has developed the product incorporating 2nd generation elements in a TOLL package, and added it to existing DFN8080 package to strengthen ROHM’s 650V GaN HEMT package lineup – meeting the market demand for even smaller and more efficient high-power applications.
The new products integrate 2nd generation GaN-on-Si chips in a TOLL package, achieving industry-leading values in the device metric that correlates ON-resistance and output charge (RDS(ON) × Qoss). This contributes to further miniaturization and energy efficiency in power systems that require high voltage resistance and high-speed switching.
To achieve mass production, ROHM leveraged proprietary technology and expertise in device design, cultivated through a vertically integrated production system, to carry out design and planning. Under the collaboration announced on December 10, 2024, front-end processes are carried out by Taiwan Semiconductor Manufacturing Company Limited (TSMC). Back-end processes are handled by ATX. On top, ROHM plans to partner with ATX to produce automotive-grade GaN devices.
In response to the increasing adoption of GaN devices in the automotive sector, which is expected to accelerate in 2026, ROHM plans to ensure the rapid introduction of automotive-grade GaN devices by strengthening these partnerships in addition to advancing its own development efforts.
Liao Hongchang, Director and General Manager, ATX SEMICONDUCTOR （WEIHAI） CO., LTD.
“We are extremely pleased to have been entrusted with production by ROHM, a company renowned for its advanced manufacturing technologies and in-house production facilities that cover everything from wafer fabrication to packaging. We began technical exchanges with ROHM in 2017 and are currently exploring possibilities for deeper collaboration. This partnership was made possible due to ATX’s track record and technical expertise in the back-end manufacturing of GaN devices. Looking ahead, we also plan to collaborate on ROHM’s ongoing development of automotive-grade GaN devices. By strengthening our partnership, we aim to contribute to energy conservation across various industries and the realization of a sustainable society.”Satoshi Fujitani, General Manager, AP Production Headquarters, ROHM Co., Ltd.
“We are delighted to have successfully produced 650V GaN HEMTs in the TOLL package, achieving sufficient performance. ROHM not only offers standalone GaN devices but also provides power solutions that combine them with ICs, leveraging ROHM’s expertise in analog technology. The knowledge and philosophy cultivated in the design of these products are also applied to device development. Collaborating with OSATs such as ATX, that possess advanced technical capabilities, allows us to stay ahead in the rapidly growing GaN market while utilizing ROHM’s strengths to bring innovative devices to market. Going forward, we will continue to enhance the performance of GaN devices to promote greater miniaturization and efficiency in a variety of applications, contributing to enrich people’s lives.”Original – ROHM
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ROHM and TSMC have entered a strategic partnership on development and volume production of gallium nitride (GaN) power devices for electric vehicle applications.
The partnership will integrate ROHM’s device development technology with TSMC’s industry-leading GaN-on-silicon process technology to meet the growing demand for superior high-voltage and high-frequency properties over silicon for power devices.
GaN power devices are currently used in consumer and industrial applications such as AC adapters and server power supplies. TSMC, a leader in sustainability and green manufacturing, supports GaN technology for its potential environmental benefits in automotive applications, such as on-board chargers and inverters for electric vehicles (EVs).
The partnership builds on ROHM and TSMC’s history of collaboration in GaN power devices. In 2023, ROHM adopted TSMC’s 650V GaN high-electron mobility transistors (HEMT), whose process is increasingly being used in consumer and industrial devices as part of ROHM’s EcoGaN™ series, including the 45W AC adapter (fast charger) “C4 Duo” produced by Innergie, a brand of Delta Electronics, Inc.
“GaN devices, capable of high-frequency operation, are highly anticipated for their contribution to miniaturization and energy savings, which can help achieve a decarbonized society. Reliable partners are crucial for implementing these innovations in society, and we are pleased to collaborate with TSMC, which possesses world-leading advanced manufacturing technology” said Katsumi Azuma, Member of the Board and Senior Managing Executive Officer at ROHM. “In addition to this partnership, by providing user-friendly GaN solutions that include control ICs to maximize GaN performance, we aim to promote the adoption of GaN in the automotive industry.”
“As we move forward with the next generations of our GaN process technology, TSMC and ROHM are extending our partnership to the development and production of GaN power devices for automotive applications,” said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC. “By combining TSMC’s expertise in semiconductor manufacturing with ROHM’s proficiency in power device design, we strive to push the boundaries of GaN technology and its implementation for EVs.”
Original – ROHM
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ROHM has announced the adoption of its EcoSiC™ products, including SiC MOSFETs and SiC Schottky barrier diodes (SBDs) in the HFA/HCA series of 3.5kW output AC-DC power supply units for 3-phase applications from COSEL, a leading power supply manufacturer in Japan. Incorporating ROHM SiC MOSFETs and SiC SBDs into the forced air-cooled HFA series and conduction-cooled HCA series achieves up to 94% efficiency. The HCA series has been mass produced since 2023, while the HFA series began mass production in 2024.
Many industrial applications that handle high power in the industrial sector, including MRI machines and CO2 lasers, require 3-phase power supplies that differ from the single-phase power supplies used in households. COSEL’s AC-DC power supply units – equipped with ROHM’s EcoSiC™ technology that excels in high-temperature, high-frequency, high-voltage environments – are compatible with 3-phase power supplies from 200VAC to 480VAC, contributing to improved power supply efficiency across a wide range of industrial equipment worldwide.
Jun Uchida, General Manager, New Product Development Dept. 2, COSEL Co., Ltd.
“The HFA/HCA series achieve high efficiency despite delivering a high-power output of 3.5kW by incorporating ROHM’s low-loss SiC power devices. Operating at high input voltages typically poses a challenge in reducing losses in high-voltage power devices, but using SiC power devices translates to significantly lower losses compared to conventional solutions, resulting in power supplies that maintains high efficiency and power density even under demanding high-power conditions.”
Akihiro Hikasa, Group General Manager, Power Devices Business Unit, SiC Business Section, ROHM Co., Ltd.
“We are delighted to support COSEL, an industry leader in power supply systems, by providing SiC power devices. A leading company in SiC power devices, ROHM also provides comprehensive power solutions that combine peripheral components. In addition, by addressing customer issues, we also improve device performance by incorporating the insights gained into our products. Going forward, we will continue to collaborate with COSEL to contribute to a sustainable society by enhancing the efficiency of industrial equipment that handle large amounts of power.”
The HFA/HCA series are 3.5kW power supplies featuring a wide input range (200VAC to 480VAC) that meets global power supply requirements. This allows them to be used anywhere in the world without the need to modify the power supply for each region, contributing to the standardization of application designs. Both forced air-cooled (HFA series) and conduction-cooled (HCA series) models – selectable based on operating environment – are available in 48V and 65V output voltage variants that can be used as power sources for a variety of high-power applications such as laser generation and MRI.
Original – ROHM
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Valeo, a leading automotive technology company, and ROHM Semiconductor collaborate to propose and optimize the next generation of power modules for electric motor inverters using their combined expertise in power electronics management. As a first step, ROHM will provide its 2-in-1 Silicon Carbide (SiC) molded module TRCDRIVE pack™ to Valeo for future powertrain solutions.
Valeo is broadening access to efficient, electrified mobility across various vehicle types and markets from the smallest one (ebikes), through the mainstream (passenger cars) to the biggest one (eTrucks). By combining Valeo’s expertise in mechatronics, thermal management and software development with ROHM’s power modules, Valeo drives the power electronics solution forward, contributing to the performance, efficiency, and decarbonization of automotive systems worldwide.
Valeo and ROHM have been collaborating since 2022, initially focusing on technical exchanges aimed at improving the performance and efficiency of the motor inverter – a key component in the propulsion systems of electric vehicles (EVs) and plug-in hybrids (PHEVs). By refining power electronics, both companies aim to offer optimized cost/performance by delivering higher energy efficiency, reducing heat generation thanks to an optimized cooling and mechatronic integration, and increasing overall reliability with a SiC packaging.
“This partnership marks, for Valeo Power Division, a significant step forward in delivering advanced and high-efficient power electronics,” says Xavier DUPONT, Valeo Power Division CEO. “Together, we aim to set new industry standards for high voltage inverters and accelerate the transition towards more efficient and affordable electric mobility.”
“We are pleased to support Valeo, a renowned automotive supplier, with our power semiconductors. ROHM’s TRCDRIVE pack™ provides high power density, leading to an improved power efficiency. Together, we contribute to the development of highly efficient powertrains by fostering the collaboration with Valeo,” says Wolfram HARNACK, President ROHM Semiconductor GmbH.
These evolutions are all essential to supporting the growing demand for longer range, faster charging capabilities, and, overall a high-performance and an affordable inverter for BEVs and PHEVs.
Valeo will start supplying a first series project in early 2026. Valeo and ROHM will contribute to the improvement of efficiency and downsizing of Valeo’s next generation of xEV inverters.
Original – ROHM
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ROHM has developed surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models – SCS2xxxNHR – for automotive applications such as onboard chargers (OBCs), with plans to deploy eight models – SCS2xxxN – for industrial equipment such as FA devices and PV inverters in December 2024.
The rapidly expanding xEV market is driving the demand for power semiconductors, among them SiC SBDs, that provide low heat generation along with high-speed switching and high-voltage capabilities in applications such as onboard chargers. Additionally, manufacturers increasingly rely on compact surface mount devices (SMDs) compatible with automated assembly equipment to boost manufacturing efficiency. Compact SMDs tend to typically feature smaller creepage distances, fact that makes high-voltage tracking prevention a critical design challenge.
As leading SiC supplier, ROHM has been working to develop high-performance SiC SBDs that offer breakdown voltages suitable for high-voltage applications with ease of mounting. Adopting an optimized package shape, it achieves a minimum creepage distance of 5.1mm, improving insulation performance when contrasted with standard products.
The new products utilize an original design that removes the center pin previously located at the bottom of the package, extending the creepage distance to a minimum of 5.1mm, approx. 1.3 times greater than standard products. This minimizes the possibility of tracking (creepage discharge) between terminals, eliminating the need for insulation treatment through resin potting when surface mounting the device on circuit boards in high voltage applications. Additionally, the devices can be mounted on the same land pattern as standard and conventional TO-263 package products, allowing an easy replacement on existing circuit boards.
Two voltage ratings are offered, 650V and 1200V, supporting 400V systems commonly used in xEVs as well as higher voltage systems expected to gain wider adoption in the future. The automotive-grade SCS2xxxNHR are AEC-Q101 qualified, ensuring they meet the high reliability standards this application sector demands.
Going forward, ROHM will continue to develop high-voltage SBDs using SiC, contributing to low energy consumption and high efficiency requirements in automotive and industrial equipment by providing optimal power devices that meet market needs.
Original – ROHM
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ROHM has developed automotive-grade AEC-Q101 qualified 4th Generation 1200V IGBTs that combine class-leading low loss characteristics with high short-circuit resistance. This makes the devices ideal for vehicle electric compressors and HV heaters as well as industrial inverters.
The current lineup includes RGA80TRX2HR / RGA80TRX2EHR / RGA80TSX2HR / RGA80TSX2EHR – in two discrete package types (TO-247-4L and TO-247N), along with 11 bare chip variants – SG84xxWN – with plans to further expand the lineup in the future.
The increasing use of higher voltages in automotive systems and industrial equipment has led to a growing demand for power devices capable of handling high voltages in applications such as vehicle electric compressors, HV heaters, and inverters for industrial equipment.
At the same time, there is a strong push for high efficiency power devices to improve energy conservation, simplified cooling mechanisms, and smaller form factors for a decarbonized society. Automotive electrical components must also comply with automotive reliability standards, while power devices for inverter and heater circuits are required to provide current interruption capabilities during short circuits, necessitating high short-circuit tolerance.
In response, ROHM redesigned the device structure and adopted an appropriate package to develop new 4th Generation IGBTs suitable for high voltage by delivering industry-low loss characteristics with superior short-circuit tolerance.
These devices achieve an industry-leading short-circuit withstand time of 10µs (Tj=25°C) together with low switching and conduction losses while maintaining a high withstand voltage of 1200V and meeting automotive standards by reviewing the device structure, including the peripheral design. At the same time, the new TO-247-4L package products, which feature 4 terminals, can accommodate an effective voltage of 1100V in a ‘Pollution Degree 2 environment’ by ensuring adequate creepage distance between pins. This enables support for higher voltage applications than conventional products.
Implementing creepage distance measures on the device side alleviates the design burden for manufacturers. On top, the TO-247-4L package achieves high-speed switching by including a Kelvin emitter terminal, resulting in even lower losses. In fact, when comparing the efficiency of the new TO-247-4L packages with conventional and standard products in a 3-phase inverter, loss is reduced by about 24% compared to standard products and by 35% over conventional products – contributing to higher efficiency in drive applications.
ROHM will continue to expand its lineup of high-performance IGBTs that contribute to greater miniaturization and high efficiency drive in automotive and industrial equipment applications.
Original – ROHM
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ROHM Co., Ltd.’s financial report for the six months ending September 30, 2024, reveals a challenging period characterized by a decline in net sales and profitability. The company’s net sales dropped by 3.0% year-over-year to ¥232,022 million. This decline reflects a mix of robust demand in certain markets, such as automotive electronics, which increased sales in SiC power devices, and growth in the computer and storage sectors. However, these gains were offset by significant sales declines in the industrial equipment market.
Key financial metrics deteriorated, with ROHM reporting an operating loss of ¥974 million, a reversal from a profit of ¥29,833 million in the prior year. Factors influencing this loss include lower sales volumes, reduced production due to inventory adjustments, and higher costs associated with expanding SiC device production and adopting eight-inch wafers. The ordinary profit also declined to a loss of ¥129 million, impacted by foreign exchange losses. Profit attributable to shareholders dropped by 94.5% to ¥2,068 million, primarily due to reduced gains on securities sales.
ROHM’s EBITDA also saw a decrease, down 35.8% to ¥39,344 million. Segment-wise, integrated circuits and discrete semiconductor devices faced declines, with IC sales down 2.9% and segment profit down 54.8%. Power devices in the automotive sector performed well, but broader semiconductor device sales suffered from subdued demand in the industrial equipment sector. In contrast, modules and resistors segments showed marginal growth, supported by increased demand for smartphone sensor modules and high-power resistors for automotive applications.
Looking forward, ROHM expects continuing economic and industry challenges, such as slowing EV market growth, prolonged inventory adjustments in industrial equipment, and fluctuating consumer demand. As a result, ROHM has revised its forecast, projecting full-year sales to decrease by 3.8% to ¥450,000 million, alongside anticipated losses in operating profit and ordinary profit. The company plans to proceed with production adjustments, aiming for future alignment with customer demand, particularly in energy-efficient solutions and advanced power devices.
Original – ROHM
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DENSO CORPORATION and ROHM Co., Ltd. announced that the two companies have agreed to start consideration of strategic partnership in the semiconductor field.
As the development and spread of electric vehicles accelerate toward the realization of carbon neutrality, the demand for electronic components and semiconductors required for electrification of vehicles is rapidly increasing. In addition, semiconductors are becoming increasingly important as products that support the intelligence of vehicles, such as automated driving and connectivity which are expected to contribute to eliminating fatalities in traffic accidents, and are essential to the realization of a sustainable society.
DENSO and ROHM have been working together through trade and development of semiconductors for automotive applications. Going forward, both companies will consider this partnership to achieve a stable supply of highly reliable products, as well as for various initiatives to develop high-quality and high-efficiency semiconductors that contribute to a sustainable society.
To further solidify the partnership, DENSO will acquire a portion of ROHM’s shares.
DENSO CORPORATION President & CEO, Shinnosuke Hayashi
DENSO positions semiconductors as key devices for realizing next-generation vehicle systems and we have deepened our cooperative relationships with semiconductor manufacturers who have abundant experience and knowledge. ROHM has a lineup of semiconductors in a wide range of areas important for automotive electronics, including analog semiconductors, power devices, and discrete semiconductors, and has extensive mass production experience. We believe that by integrating the automotive technologies and expertise we have cultivated over the years, we will be able to ensure a stable supply and accelerate technological development.
ROHM Co., Ltd. President (Representative Director), Isao Matsumoto
Global Tier 1 manufacturer DENSO and ROHM have been deepening collaboration for many years, and in recent years we have been working on joint development of analog semiconductors. We believe that the partnership with DENSO and the acquisition of shares by DENSO will further strengthen our cooperative relationship. To realize carbon neutrality, it is important to collaborate on technology at the device level with an eye toward end products and systems. We believe that we can contribute to the realization of a sustainable society by deepening our integration with DENSO, who has advanced system construction capabilities in the automotive and industrial equipment fields.
Original – DENSO
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ROHM has released N-channel MOSFETs – RF9x120BKFRA / RQ3xxx0BxFRA / RD3x0xxBKHRB – featuring low ON-resistance ideal for a variety of automotive applications, including motors for doors and seat positioning, as well as LED headlights. Sales have begun with 10 models across 3 package types, with plans to expand the lineup in the future.
The automotive sector is seeing a surge in the number of electronic components, driven by the demand for enhanced safety and convenience. At the same time, there is a pressing need for improved power efficiency to optimize fuel and electricity consumption. Especially for MOSFETs essential for switching applications in automotive systems, there is a growing requirement for lower ON resistance to minimize loss and heat generation.
ROHM, which has been supplying low ON-resistance MOSFETs for consumer and industrial equipment, has now extended this technology to the automotive sector. Adapting cutting-edge medium voltage processes to meet the stringent reliability requirements of automotive products allowed us to develop 10 N-channel MOSFET models characterized by low ON resistance.
Offered in voltage ratings of 40V, 60V, and 100V, the new products incorporate a split-gate structure to achieve low ON-resistance, contributing to higher efficiency operation in automotive applications. All models are qualified under the AEC-Q101 automotive reliability standard, guaranteeing exceptional high reliability.
Users can select from among three package types, depending on the application. For space-constrained sets like Advanced Driver Assistance Systems (ADAS), the compact DFN2020Y7LSAA (2.0mm × 2.0mm) and HSMT8AG (3.3mm × 3.3mm) packages are ideal. For automotive power applications, the widely used TO-252 (DPAK) package (6.6mm × 10.0mm) is also available. In addition, ROHM has further enhanced mounting reliability by utilizing wettable flank technology for the DFN2020Y7LSAA package and gull-wing leads for the TO-252 package.
Going forward, ROHM plans to expand its lineup of medium-voltage N-channel MOSFETs to provide even greater miniaturization and higher efficiency in automotive applications. Mass production of the DFN3333 (3.3mm × 3.3mm) and HPLF5060 (5.0mm × 6.0mm) packages is scheduled for October 2024, followed by 80V products in 2025. P-channel products are also scheduled for future release.
Original – ROHM
