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WeEn Semiconductors showcased its silicon carbide (SiC) MOSFETs and Schottky Barrier Diodes (SBDs) in highly thermally efficient TSPAK packages at this year’s PCIM Expo conference and trade fair. The new packages enable engineers to improve efficiency, reduce form factors, extend reliability and lower EMI across a variety of high-power applications.
Providing effective heat dissipation from a thermal pad on the surface of the SiC device rather than via a PCB substrate, the company’s top-side cooling TSPAK technologies can reduce J-A (junction-to-ambient) thermal resistance by up to 16% compared to conventional devices. As a result, the packages help to simplify thermal management design, lower losses and increase power density.
By minimizing or eliminating the need for complex PCB cooling, TSPAK devices reduce component count and drive down system costs. In addition, the ability to support a greater number of power cycle extends reliability, while reduced EMI helps engineers to simplify system EMC compliance. EMI reduction derives from the fact that the circulating current that creates the magnetic field is no longer blocked by the thermal vias necessary in conventional bottom-side cooling designs and can return to the source directly, minimizing magnetic interference.
WeEn’s TSPAK SiC technologies are ideally suited to on-board chargers and high-voltage-to-low-voltage DC-DC converters in electric vehicles (EVs), automotive HVAC compressors, vehicle charging stations, photovoltaic (PV) renewable energy systems and power supplies for computing and telecom servers. TSPAK MOSFETs offer voltage ratings from 650 V to 1700 V and on resistance (RDS(ON)) ratings from 20 to 150mΩ. TSPAK SBDs are available with voltages from 650 V to 1200 V and current ratings of 10 A to 40 A.
All products are available in industrial grade and automotive grade variants.
Original – WeEn Semiconductors
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NOVOSENSE Microelectronics will present its latest portfolio of automotive and industrial solutions at PCIM Europe 2025, taking place from May 6 to 8 in Nuremberg, Germany. NOVOSENSE will present new product introductions and live demonstrations that address key challenges in modern automotive design, including system integration, power efficiency, functional safety, and electromagnetic compatibility.
As vehicles become increasingly electrified and software-defined, engineers face mounting demands for compact, efficient, and intelligent components that can operate reliably under harsh conditions. NOVOSENSE’s growing portfolio of automotive-grade ICs reflects this shift, with a focus on sensing, isolation, and drive capabilities tailored to emerging system architectures.
Among the highlights at PCIM 2025 is the European debut of the NSDA6934-Q1, a Class D audio amplifier designed for next-generation in-vehicle infotainment. With ultra-low EMI, integrated diagnostics, and robust thermal performance, this device is engineered to meet the high-fidelity and low-noise requirements of premium audio systems. A live demonstration using amplifier boards and speakers will allow visitors to hear its performance first-hand.
Also on display will be the NSLxxxxx series of linear LED drivers, designed for automotive lighting applications. As vehicle lighting evolves to support both functional and aesthetic roles, these drivers offer efficient, low-noise operation with flexible current regulation. Supporting applications from headlamps to ambient lighting strips, the series meets stringent thermal and electrical performance standards required in automotive environments.
Moving inside the vehicle for improved interior lighting control, the NSUC1500-Q1 ambient lighting driver SoC integrates LIN communication, MCU, and driver functionality into a single chip. It enables dynamic lighting sequences and personalization features. The ability to streamline system architecture while enabling programmability and diagnostics makes it particularly attractive for OEMs focused on space savings and system complexity reduction.
The NSE34/35xxx series of high-side switches optimized for power distribution units and smart fuse applications, integrating protection features such as over-temperature, over-current, and open-load detection. In addition, the NSHT30-Q1 temperature and humidity sensor offers accurate measurements with fast response times and high reliability, supporting climate control systems and in-cabin monitoring functions for improved occupant comfort and safety.
The NOVOSENSE booth will also feature a suite of products for New Energy Vehicle (NEV) applications such as battery management systems (BMS), on-board chargers (OBC), DC-DC converters, and traction inverters. A major highlight will be the new third-generation automotive grade NSI83xx series of digital isolators, which address signal integrity and safety requirements with industry-leading EMI performance, high CMTI, low power consumption, and multiple channel options.
Rounding out the NEV range of products are the NSM201x-P current sensors, delivering precise current measurement for electric vehicle platforms, and the NSI67x0 series of isolated gate drivers, designed to support IGBT and SiC-based power stages in traction inverters and motor control.
PCIM Europe stands as the foremost international exhibition and conference encompassing power electronics, intelligent motion, renewable energy, and energy management. Since its inception in 1979, the event has served as the convergence point for industry specialists and academics, unveiling cutting-edge trends and innovations. This event effectively showcases the complete value chain, spanning from components, drive control, and packaging to the ultimate intelligent system solutions.
Visit NOVOSENSE at PCIM 2025 (Hall 4A, Booth 119) to see all of the above products and more in person.
Original – NOVOSENSE Microelectronics
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Wise-integration will break new ground at PCIM Europe 2025, May 6–8 in Nuremberg. In collaboration with Savoy International Group, the company will debut its digital controller of a silicon carbide (SiC) power demonstrator model, underscoring its expansion into complementary wide-bandgap (WBG) technologies and showcasing its WiseWare® digital controller’s universality and adaptability across those technologies.
This marks a new market entry for Wise-integration—in particular, targeting SiC-based high-voltage applications in automotive and industrial sectors—while reinforcing that WiseWare® can serve as a common digital intelligence layer regardless of the underlying semiconductor material.
The WiseWare® 1 OBC SIC 7kW power demonstrator model builds on the company’s core expertise in GaN-based systems and digital control ICs, reinforcing its commitment to advancing the full spectrum of power semiconductor technologies. This cross-compatible, digital control solution for both GaN and SiC, enables flexible, efficient, and intelligent power systems across multiple WBG platforms.
“This demonstration of a silicon-carbide onboard charger (OBC) marks an important step in Wise-integration’s journey toward the automotive market,” said CEO Thierry Bouchet. “By showing that WiseWare® can reliably control high-voltage, high-power systems in an EV-relevant application, we’re validating our digital control platform as a strong candidate for next-generation onboard chargers. It’s a first step toward demonstrating that our technology is scalable, adaptable, and aligned with the needs of future EV platforms.”
The demonstrator is a prototype product for the company’s partner, Savoy International Group, a Tier 1 automotive supplier, whose e-mobility division collaborated with Wise-integration on a GaN charger embedded in e-bike batteries in 2023.
“This prototype has been developed specifically to support the electrification of Savoy’s innovative, light electric vehicles under the KILOW brand, as well as their broader ambition to promote fun, accessible, and sustainable mobility solutions,” Bouchet explained.
“Our previous collaboration with Wise-integration on the embedded GaN charger for our e-bike battery met all of our expectations for performance and helps us differentiate KILOW in a crowded field,” said Émile Allamand, CEO of Savoy Group. “The SiC onboard charger will enable us to diversify our EV offerings with a light, four-wheel vehicle under our KILOW brand.”
SiC technology delivers excellent thermal performance and is highly efficient under heavy loads—making it ideal for high-power components like traction inverters and fast chargers. Its ruggedness and maturity also contribute to its reliability in the demanding automotive environment. WiseWare®’s SiC demonstration shows that the company’s digital control platform is technology-agnostic, and can bring the same performance, modularity, and intelligence to SiC systems as it does to GaN systems.
Visit Wise-integration at Hall 6, Booth 450, to see how SiC solutions complement its award-winning GaN-based WiseWare® platform. The company will also share updates on key partnerships and its technology roadmap during the event.
Original – Wise-integration
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SemiQ Inc will showcase several advances relating to high power SiC MOSFETs and modules at PCIM 2025.
PCIM takes place in Nuremberg from the 6th to the 8th May, with SemiQ partnering with alfatec to demonstrate its technology, which can be seen in Hall 4A, Booth 109 throughout the show.
This will include SemiQ’s recently launched third-generation SiC technologies and a wide range of modules to optimize systems for cost, resistance and thermal management. SiC technologies on display at PCIM will include:
1200 V SOT-227 MOSFET modules
Based on SemiQ’s third-generation SiC, these modules are available with an RDSon of 8.4 to 39 mΩ and deliver exceptional switching speeds and reduced losses with low junction to case thermal resistance.
Automotive-qualified QSiC 1200 V MOSFETs
The QSiC 1200 V MOSFETs are available in a bare die and TO-247 4L package and have received AEC-Q101 qualification for automotive systems. The third-generation SiC devices enable smaller die sizes while improving switching speeds and efficiency and are available with an RDSon between 16 and 80 mΩ.
1200 V full-bridge modules for solar inverters, energy storage and battery charging
SemiQ’s family of full-bridge modules deliver up to 333 W of power with a continuous drain of up to 102 A and sets a new standard for power density and efficiency in demanding DC applications.
1200 V six-pack modules for cost-optimized systems
Tested to over 1350 V, with 100% wafer-level burn in, SemiQ’s six-pack modules enable lower cost and more-compact system-level designs at large scale. Applications include AC/DC converters, energy storage systems, battery charging, motor drives and PFC boost converters, including EV fast charging.
To organize a meeting at PCIM, please contact media@semiq.com.
Original – SemiQ
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EPC will exhibit its latest advancements in high-performance GaN technology at PCIM Europe 2025, taking place 6–8 May in Nuremberg, Germany.
Visit EPC in Hall 9, Stand 318 to see a wide array of GaN-based power solutions powering next-generation applications—from high-density computing to motor drives for humanoid robots, automotive electrification, and satellites. Live demonstrations will highlight EPC’s latest GaN FETs and ICs in real-world applications that emphasize smaller size, higher efficiency, and lower cost compared to silicon solutions.
Motor Drives: Powering Robotics, Automation, and More
From industrial automation to smart consumer devices, GaN-based motor drives offer higher efficiency, smaller size, and improved performance compared to traditional silicon solutions. EPC’s latest GaN technology powers motor drive applications across a wide range of industries, including:
- Humanoids & Quadrupeds – Enabling next-generation robotics with faster response times, lighter joints, and greater energy efficiency.
- Drone Motors – Delivering longer flight times, compact size, and precise control through high-speed switching.
- Power Tools – Extending battery life and increasing torque with compact, high-efficiency GaN motor drives.
- Vacuum Cleaners & Delivery Robots – Empowering smarter, more autonomous systems with high power density and thermal performance.
48 V = GaN: Powering the Future of High-Density Computing
Today’s high-density computing environments demand compact, efficient power solutions to meet rising performance and thermal requirements. EPC’s latest GaN technology for AC/DC server power and 48 V DC-DC power conversion delivers reduced losses, increased power density, enhanced thermal performance, and best-in-class efficiency—enabling more computing in less space.
Visit EPC at PCIM Europe 2025:
- Schedule a Meeting: EPC’s technical experts, including CEO Dr. Alex Lidow, will be on-site to discuss how GaN is driving innovation across multiple industries. To schedule a meeting during PCIM contact info@epc-co.com
- Exhibition Booth Hall 9, Stand 513: Visit EPC’s booth to explore our comprehensive portfolio of GaN-based solutions and applications.
- Technical Presentations: Attend our technical sessions to gain insights into the latest trends and advancements in GaN power conversion technology.
- GaN-Based 5 kW Four-Level Totem-Pole PFC Converter for AI Servers Power Supply; Speaker: Marco Palma
- Bodo’s Power Systems – GaN Expert Panel at PCIM 2025; Panelist: Alex Lidow, Ph.D.
- 5 kW Isolated 400 V to 50 V, DC-DC Converter for Server Power Supplies; Speaker: Michael de Rooij, Ph.D.
- Design of GaN FET-Based Multilevel Three-Phase Inverter for High Voltage Automotive Applications; Speaker: Fabio Mandrile, Polytechnical University of Turin
- Next Generation GaN Platform for High-Density DC-DC Converters; Speaker: Alex Lidow, Ph.D.
“PCIM Europe is the ideal stage to show how EPC’s GaN is transforming power electronics—from server power to robotics, we’re helping engineers unlock the full potential of wide bandgap solutions,” said Nick Cataldo, VP of Sales and Marketing at EPC.
Original – Efficient Power Conversion
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Rohde & Schwarz will showcase its latest solutions and advanced techniques for testing and analyzing power electronic systems and components at PCIM Expo 2025 in Nuremberg, Germany. At the company’s booth (hall 7, booth 166), the spotlight will be on solutions utilizing the company’s cutting-edge test instruments to address the challenges of debugging next generation wide bandgap semiconductors like GaN and SiC.
Rigorous testing and advanced characterization methods help design engineers enhance the performance, efficiency, and reliability of their power electronic designs based on SiC and GaN devices, used in pioneering industries like e-mobility, renewable energy or AI data centers. Rohde & Schwarz will bring a selection of its comprehensive T&M portfolio to booth 166 in hall 7 of PCIM Expo 2025, taking place from May 6 to 8 at the Nuremberg Exhibition Center. The test solutions are tailored for power electronics applications where high efficiency, fast switching speeds, improved power density and high-temperature operation matter.
At the center of the presented setups will be the R&S RT-ZISO isolated probing system from Rohde & Schwarz. This next generation isolated probe has set new standards with unprecedented accuracy, sensitivity, dynamic range and bandwidth for wide bandgap (WBG) power designs with SiC and GaN. Rohde & Schwarz will showcase the advantage of the Isolated probing system over single-ended probes in a setup to investigate the switching behavior of a GaN-MosFET.
Double pulse testing is a method for evaluating the switching performance of SiC and GaN based power devices. Rohde & Schwarz is collaborating with industry expert PE-Systems GmbH for a stable and accurate approach to double pulse testing using the R&S®MXO 5 next generation oscilloscope from Rohde & Schwarz with eight channels in combination with the R&S RT-ZISO. At PCIM, visitors can experience accurate, reliable and fast double pulse testing on 1200 V SiC devices from Wolfspeed, typically used as traction inverters in the automotive industry.
Loadjump testing used to be a time-consuming manual process to verify a Buck converter’s load step response at varying input voltage levels, using only a few reference points. For this application, as well, Rohde & Schwarz collaborates with PE-Systems GmbH, who offers a test automation software. In combination with the MXO 5 oscilloscope and the R&S RT-ZISO isolated probing system, this solution not only reduces overall testing time but also maintains the same number of test points. At PCIM, the companies demonstrate automated loadjump testing of a Buck converter of Monolithic Power Systems, Inc. within a voltage range of 6V to 60V. The setup even allows for more reference points within the same timeframe and can be extended to include temperature control, facilitating the full automation of input voltage, load current, and temperature profile variations.
Rohde & Schwarz will also showcase its solutions for component characterization. The R&S®LCX LCR meters with customized impedance measurement functions are suitable for all discrete passive components up to 10 MHz. Users can easily characterize the voltage dependence of capacitances in core components of power converters like MLCCs with the R&S LCX. Combined with a sweep software tool, users can perform comprehensive sweep measurements and display them in numerous charts. The MFIA impedance analyzer from Zurich Instruments AG (a subsidiary since 2021) is capable of impedance spectroscopy for both low impedance components such as shunt resistors and DC-link capacitors and high impedance systems. It offers measurement modes for impedance analysis over frequency and time as well as other features such as integrated oscilloscope and spectrum analyzer capabilities.
Dr. Philipp Weigell, Vice President of the Industry, Components, Research & University Market Segment at Rohde & Schwarz, explains: “PCIM Expo is an important venue for us to highlight our advancements in wide bandgap semiconductor testing. Testing plays a critical role to improve power efficiency, reduce size, and manage heat more effectively in power conversion applications used in AI data centers, for instance. Through collaboration with industry experts and with our advanced testing solutions we enable our customers to develop reliable and efficient systems that meet the rigorous demands of modern data processing applications.”
Rohde & Schwarz will present these and other advanced test solutions at PCIM Expo 2025, from May 6 to 8, at booth 166, hall 7 of Nuremberg Exhibition Center. For more information on power electronics test solutions from Rohde & Schwarz, visit: https://www.rohde-schwarz.com/power-electronics
Original – Rohde & Schwarz
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Fraunhofer IAF has developed a monolithic bidirectional switch with a blocking voltage of 1200 V using its GaN-on-insulator technology. The switch contains two free-wheeling diodes and can deliver performance and efficiency benefits in bidirectional chargers and drives for electric vehicles as well as in systems for generating and storing renewable energy. The results will be presented together with other developments in power electronics from May 6 to 8, 2025, at PCIM Europe in Nuremberg.
Technological innovations in power electronics are not only essential for the success of the energy transition, they also provide sustainable support for economic development in Europe. The Fraunhofer Institute for Applied Solid State Physics IAF develops power electronic components based on the wide-bandgap compound semiconductor gallium nitride (GaN) to enable further developments in electric mobility, the energy industry, and climate technology.
Most recently, Fraunhofer IAF has made significant progress in high-voltage and low-voltage components: At PCIM Europe 2025, researchers will present a highly integrated bidirectional switch (MBDS) with a blocking voltage of 1200 V. They will also demonstrate the use of a conventional GaN transistor with a gate contact as a bidirectional switch in a 3-level T-type converter. Both results were achieved as part of the GaN4EmoBiL project funded by the German Federal Ministry for Economic Affairs and Climate Action (BMWK).
“Geopolitical challenges such as the current tariff conflicts are an opportunity for European economies to gain technological advantages in the key areas of energy generation and mobility by developing their own solutions in power electronics,” emphasizes Achim Lösch, Business Developer for High Frequency and Power Electronics at Fraunhofer IAF.
“The added value of innovative power electronics is obvious: Achieving more power, better efficiency, and greater compactness at the same time advances the relevant technologies of the future: Electric cars charge faster and energy from renewable sources can be converted and stored more efficiently. At Fraunhofer IAF, we are working intensively to provide positive impetus in these important areas through innovative GaN-based components,” explains Lösch.
Researchers at Fraunhofer IAF have developed a GaN MBDS suitable for the 1200 V voltage class with integrated free-wheeling diodes and successfully integrated it into their own GaN technology. The researchers used the new GaN-on-insulator technology of Fraunhofer IAF for the manufacturing: Highly insulating materials such as silicon carbide (SiC) and sapphire are used as the carrier substrate for the GaN power semiconductor to improve the insulation between the components and increase the breakdown voltage.
The MBDS blocks voltage and conducts current in two directions, which saves chip space and reduces conduction losses as there is only one split depletion region. The GaN MBDS can be used in grid-connected power converters for energy generation and storage as well as electric drive systems. In these applications, the MBDS enables the development of systems in the 1200 V class.
Developers are working intensively on electric vehicles in this voltage class as increasing blocking voltages offer significant advantages in terms of everyday usability: Charging power increases and energy losses during operation decrease as a result of lower resistance. Electric cars with 400 V currently dominate the market, but 800 V technology is gaining ground. The leap to 1200 V has a positive effect on the long-distance capability of electric cars and the utility value of electric trucks.
The 1200 V GaN MBDS with integrated peripherals will be presented by Dr. Michael Basler at the PCIM Conference on May 8 from 10:10 to 10:30 a.m. in the oral session on GaN Devices II on Stage München 1. It is based on Basler’s paper “Highly-Integrated 1200 V GaN-Based Monolithic Bidirectional Switch,” which will be published in conjunction with PCIM 2025.
Fraunhofer IAF has also made progress in the field of multi-level converters with bidirectional switches for blocking voltages up to 48 V: Researchers have used a conventional single-gate HEMT (high electron mobility transistor) based on the aluminum gallium nitride/gallium nitride (AlGaN/GaN) compound semiconductor heterostructure in a low-voltage 3-level T-type converter as a bidirectional switch, thereby achieving simpler control of the transistor than with a bidirectional transistor with two gates for such topologies. Like the 1200 V MBDS, this innovative approach enables simpler control in addition to a space-efficient component design.
On May 6, Daniel Grieshaber will present the results shown in his paper “Investigation of a Single-Gate GaN HEMT as Bidirectional Switch in a Low Voltage Multilevel Topology” at the PCIM Conference Poster Session in the GaN Devices I section from 3:30 to 5:00 p.m. in the foyer.
In addition to innovations in the field of bidirectional switches, researchers at Fraunhofer IAF are working along the entire semiconductor value chain on materials, components, modules and subsystems for GaN-based power electronics in the voltage classes 48 V, 100 V, 200 V, 600 V and 1200 V. The current focus is on lateral and vertical components, monolithic integration, and highly insulating substrates such as sapphire or SiC. In addition to the results presented at PCIM 2025, Fraunhofer IAF is already working on components in the 1700 V class.
Fraunhofer IAF will be presenting an overview of its research and development portfolio in power electronics at the PCIM Expo in Hall 6, Booth 260, from May 6 to 8. Among others, an epitaxial 8-inch GaN wafer, processed 4-inch GaN-on-SiC and GaN-on-sapphire wafers, GaN power ICs, integrated lateral and vertical GaN components and 600 V half-bridge modules based on GaN are being exhibited.
At the PCIM Conference, Dr. Richard Reiner will also summarize the latest power electronics developments at Fraunhofer IAF in his presentation “Lateral, Vertical, Bidirectional! Innovations and Progress in GaN Devices and Power ICs.” It will take place on May 7 from 10:50 to 11:10 a.m. on the Technology Stage.
Original – Fraunhofer IAF
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Cambridge GaN Devices (CGD) will demonstrate at PCIM how GaN technology is delivering improved performance in higher power applications. The company’s ICeGaN® technology brings the benefits of GaN – including efficiency, size and thermal management – to applications including servers, data centres, inverters, industrial power supplies and automotive EVs. A highlight of the booth will be the company’s world’s-first Combo ICeGaN innovation which pairs the company’s ICeGaN GaN ICs with IGBTs to address electric vehicle inverters at 100kW+, improving efficiency over traditional silicon solutions and reducing cost when compared with silicon carbide solutions.
HENRYK DABROWSKI | SENIOR VICE PRESIDENT OF GLOBAL SALES, CGD
“ICeGaN redefines gallium nitride. By integrating the interface circuitry on the GaN chip along with the HEMT, ICeGaN is very easy to use. Devices can be easily driven using a standard power IC driver. Moreover, it is very rugged and robust, and includes extra protection circuitry, so reduces component count. Engineers are now understanding the true value proposition of ICeGaN, and are beginning to realize that GaN may replace SiC in certain high efficiency designs, due to its lower manufacturing cost. PCIM attracts key professionals from all over the world, and we are looking forward to showing them what ICeGaN can do, especially for higher power applications.”During PCIM, CGD will give the following Technical Session and Exhibitor Presentation:
ICeGaN benefits in Motor Drive Inverters through the evaluation of Electrical Performance under Application Conditions This presentation explores the advantages of ICeGaN technology in motor drive inverters, focusing on its impact on electrical performance. Key topics include improved efficiency, reduced power losses, enhanced thermal management, and the potential for compact system design. Through application-specific evaluations, the discussion highlights how GaN-based solutions outperform traditional silicon inverters, offering transformative benefits for modern motor control systems.
Speaker: Farhan Beg, Director of Application Engineering, CGD
Date: Tuesday May 6
Time: 12:55-13:15
Location: Hall 4, Booth 4-435ICeGaN Leads GaN Integration for High-Power Applications Cambridge GaN Devices’ renowned ICeGaN technology simplifies GaN integration, offering a cost-effective solution in system level for high-power applications in the 1kW to 100kW range. Now available on the market, the P2 product series featuring 25 mΩ and 55 mΩ GaN chips have demonstrated high performance in Automotive Inverter and Industrial Motor Drive applications. With high dV/dt immunity, 3x gate robustness vs incumbent GaN technologies and true 0V Turn Off, ICeGaN®️ ensures ease of use, optimized efficiency and reliability. In addition, P2 enables paralleling with negligeable design effort. This presentation will guide you through real-world use cases.
Speaker: Henryk Dabrowski, Senior Vice President, Global Sales, CGD
Date: Wednesday May 7
Time: 10:25-10:45
Location: Hall 5, 135On booth 7. 657, CGD will present demos that highlight the benefits of employing its ICeGaN technology in three application spaces: Motor Drives; Data Centres; and Electric Vehicles.
Motor Drives
- 650 V 25 mΩ half bridge for 2-6 kW systems. The design uses the BHDFN enhanced bottom-side cooled package which is capable of dissipating 10 W (TA = 50°C)
- Targeting home appliances this 400 W design in partnership with Qorvo demonstrates how easily MOSFETs can be replaced with ICeGaN, eliminating fans, heatsinks and bulky and expensive resistors, increasing efficiency and reducing size.
- This 800 W EVK, also in partnership with Qorvo, targets industrial applications. ICeGaN’s integrated Miller Clamp eliminates the need for negative gate voltage for turn-off, and there is no need for a special GaN driver. The design increases efficiency and provides a quiet drive profile
- This IPM uses ICeGaN to run cooler and eliminate heatsinks, providing lower deadtime and less distortion.
- Demo compares three-phase inverter designs using a shunt resistor with the simpler, lower BOM count ICeGaN design with integrated Current Sense.
Data Centres
- 650 V 25 mΩ half bridge for 2-6 kW systems. The design uses the BHDFN enhanced bottom-side cooled package which is capable of dissipating 10 W (TA = 50°C)
- 3kW bridgeless Totem Pole PFC reference design hits 99.1% efficiency levels, meets IEC 61000–3–2 and exceeds 80 Plus Titanium specs. The modular design facilitates comparison with different controllers and power stages.
- 2.5 kW CCM Totem-Pole PFC demo board delivers high efficiency and enables easy interfacing to an analogue PFC controller. Co-designed with Inventchip, this solution features optimised AC current zero crossing control and low THD.
- 3kW LLC test board for a 400 V to 48 V single stage LLC converter. This ICeGaN design enables high frequency LLC for high power density DC/DC.
- Power Matrix 2kW/3kW quarter brick isolated DC/DC converter with a peak efficiency of 98% and a power density of 1.16kW/in3. Measuring just 63.5×36×12.4mm it demonstrates ultra-high power density, and supports multiple modules in parallel.
- 650 V 25 mΩ full bridge 4-10 kW reference design. The DHDFN package featuring double side cooling reduces thermal resistance enabling the highest power density.
Electric Vehicles
- Developed with IFP Energies nouvelles (IFPEN), a major French public research and training organization in the fields of energy, transport and the environment, this 3-Level ANPC EV inverter for 800 V traction develops 100 kW. Enhanced motor performance, reliability and efficiency with ICeGaN in 3-level NPC topology increases inverter efficiency, lowers THD and reduces dV/dt at the motor. Reduced switching losses enables power density of 25-30 kW/l.
- Using ICeGaN in parallel configuration enables higher power levels – to 10 kW in this example. The dual-side cooled DHDFN package with dual-gate pinout simplifies PCB routing, and ICeGaN’s innovative control creates superior current sharing. Clean switching allows for full current (400 V, 120 A) in double-pulse test.
- 650 V 25 mΩ full bridge 4-10 kW reference design. The DHDFN package featuring double side cooling reduces thermal resistance enabling the highest power density.
GIORGIA LONGOBARDI | FOUNDER AND CEO, CGD
“CGD’s latest P2 series ICs feature RDS(on) levels down to 25 mΩ, supporting multi kW power levels with the highest efficiency. We have built a secure supply chain including manufacturing deals with TSMC and ASE, and distribution through Digi-Key. With Combo ICeGaN, our technology roadmap has been extended to address EV applications to over 100kW, and we are sure that designers will be inspired by the new capabilities ICeGaN delivers.”Original – Cambridge GaN Devices
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Alpha and Omega Semiconductor Limited announced it will exhibit and demonstrate the advancements it has made in delivering application-specific power semiconductor, power IC and module solutions at PCIM 2025. Attendees will learn about the company’s groundbreaking power management product innovations that solve critical design challenges in multiple strategic markets and match key application specifications. The AOS products highlighted at PCIM will include:
Booth highlights
- Automotive and Industrial: AOS is introducing its AEC-Q101 qualified Generation 3 1200V SiC MOSFET technology that will provide a 20-30 percent loss improvement compared to the already leading Gen 2 technology. This performance enhancement will not come with a penalty to robustness as the Gen3 technology has improved ruggedness, including full HV-H3TRB compliance for harsh environment applications. These new MOSFETs expand the existing automotive-qualified 650V, 750V, 1200V, and 1700V SiC MOSFETs in through-hole and surface mount/topside cooled packages. The 1200V Gen3 SiC MOSFETs will initially be available from 15mohm to 40mohm in TO247-4L packages with production starting May 2025.
- Intelligent Power Modules, Mega IPM-7: AOS has integrated its latest G2 IGBT and high-voltage gate driver into the world’s most compact package design, delivering mega power of up to 100W for motor control applications. The portfolio covers 600V / (1A-3A) in various package options (Mega IPM-7D, IPM-7DT, IPM-7E) that are ideal solutions for various design requirements.
- Motor Drive ICs: AOS will announce a new range of 60V and 100V driver ICs for power tools, outdoor garden equipment, and e-mobility applications, including a 100V half-bridge driver IC, a 100V 3-phase driver IC, and a 60V 3-phase driver IC. These products all support 100 percent duty cycle operation. Plus, demo boards using AOS’ motor driver IC and AlphaSGT™ MOSFETs (30V-150V) will be featured.
- eFuse: AOS’ Hot Swap Controllers and Power MOSFET combined into a single eFuse package. The eFuse can improve the system’s reliability by isolating the load from the main power rails in case of a fault condition. AOS will announce its latest 12V/60A eFuse products in May 2025.
- State-of-the-art Packaging: AOS’ highly efficient 25V-150V MOSFETs are available in advanced packaging, including a double-sided cooling DFN 5×6 that delivers industry-leading thermal resistance. Also available are two robust packages, LFPAK 5×6 package and the GLPAK™, which features gull-wing leads for enhanced board reliability and larger copper clips that significantly improve current carrying capability. In addition, the GTPAK™ is a topside cooling package designed with a large exposed pad for more efficient heat transfer.
Original – Alpha and Omega Semiconductor
- Automotive and Industrial: AOS is introducing its AEC-Q101 qualified Generation 3 1200V SiC MOSFET technology that will provide a 20-30 percent loss improvement compared to the already leading Gen 2 technology. This performance enhancement will not come with a penalty to robustness as the Gen3 technology has improved ruggedness, including full HV-H3TRB compliance for harsh environment applications. These new MOSFETs expand the existing automotive-qualified 650V, 750V, 1200V, and 1700V SiC MOSFETs in through-hole and surface mount/topside cooled packages. The 1200V Gen3 SiC MOSFETs will initially be available from 15mohm to 40mohm in TO247-4L packages with production starting May 2025.
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WeEn Semiconductors will exhibit the company’s latest 600 V super junction MOSFET for computing and telecoms server applications at this year’s PCIM Expo conference and trade fair. The WSJ2M60R065DTL has been specifically developed to address the demands of artificial intelligence (AI) and other high-performance processing applications by enabling improved efficiency, smaller form factors and easier thermal management.
Based on the company’s latest generation super junction technology, the WeEn WSJ2M60R065DTL super junction MOSFET combines an industry-leading on resistance (RDS(ON)) and figure of merit (RDS(ON)*Qg) with an ultra-compact TOLL package. Visitors to PCIM in Nuremberg from 6th – 8th May 2025 will have the opportunity to see this advanced technology on the WeEn booth (Hall 9, booth 131), alongside other bipolar products including silicon-controlled rectifiers, power diodes, high voltage transistors and silicon carbide (SiC) devices.
The WSJ2M60R065DTL is rated for 50 A, features a maximum RDS(ON) of 65 mΩ and has a typical blocking voltage of around 700 V. An integrated and fine-tuned forward recovery diode (FRD) ensures excellent reverse recovery robustness and balanced high-temperature performance. The body diode can withstand a commutation speed of 1000 A/μs without damage, making the WSJ2M60R065DTL particularly suitable for Zero Voltage Switching (ZVS) applications in soft-switching topologies where it can deliver high efficiency while handling irregular operating conditions. At the same time, stable resistance performance delivers a steady and predictable RDS(ON) across a range of current and temperature conditions.
In developing the new MOSFET, WeEn has focused on precise control of the charge balance of the super junction structure. This ensures robust avalanche ruggedness and low capacitive losses that allow for an optimized balance of RDS(ON) and EOSS As with all WeEn technologies, reliability is a prime consideration and the company conducts extensive and reliability checks. All of the company’s super junction MOSFETs demonstrate not only consistency among samples but good ESD capabilities and zero aging during reliability examinations.
Original – WeEn Semiconductors
