-
Navitas Semiconductor announced a strategic partnership with Powerchip Semiconductor Manufacturing Corporation (PSMC or Powerchip), to start production and continue development of best-in-class 200mm GaN-on-silicon technology.
Navitas’ GaN IC portfolio is expected to use Powerchip’s 200mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has been operational since 2019 and supports various high-volume manufacturing processes for GaN, ranging from micro-LEDs to RF GaN devices.
Powerchip’s capabilities include an improved 180nm CMOS process, offering smaller and more advanced geometries, which bring improvements in performance, power efficiency, integration, and cost. “200mm GaN-on-silicon production on a 180nm process node enables us to continue innovating higher power density, faster, and more efficient devices while simultaneously improving cost, scale, and manufacturing yields”, said Dr. Sid Sundaresan, SVP of WBG Technology Platforms at Navitas.
Powerchip is expected to manufacture Navitas’ GaN portfolio with voltage ratings from 100V to 650V, supporting the growing demand for GaN for 48V infrastructure, including hyper-scale AI data centers and EVs. Qualification of initial devices is expected in Q4 2025. The 100V family is expected to start production first at Powerchip in 1H26, while the company expects 650V devices will transition from Navitas’ existing supplier, TSMC, to Powerchip over the next 12-24 months.
Navitas recently made several announcements in the AI data center, EV, and solar markets, including its collaboration with NVIDIA to support GaN and SiC technologies for 800V HVDC architectures for 1 MW IT racks and beyond. Enphase announced that its next-generation IQ9 would include Navitas’ 650 V bi-directional GaNFast ICs, and Changan Automobile announced its first commercial GaN-based OBC (on-board charger) using Navitas’ GaNSafe technology.
“We are proud to partner with Powerchip to advance high-volume 200 mm GaN-on-silicon production and look forward to driving continued innovation together in the years ahead”, said Gene Sheridan, CEO and co-founder of Navitas. “Through our partnership with Powerchip, we are well-positioned to drive sustained progress in product performance, technological evolution, and cost efficiency.”
“Powerchip has collaborated with Navitas on GaN-on-Si technology for years, and we’re thrilled to announce that product qualification is nearly complete – bringing us to the verge of mass production”, said Martin Chu, President at Powerchip. “Building on this strong partnership, Powerchip is committed to expanding our cooperation and continuously supporting Navitas in exploring and growing the GaN market.”
Original – Navitas Semiconductor
-
Navitas Semiconductor has been awarded the ‘Outstanding Technical Collaboration Award’ from VREMT Energy, a subsidiary of Geely, which specializes in new energy vehicle power batteries, electric drive systems, charging systems and energy storage systems.
VREMT and Navitas opened a joint R&D Laboratory to accelerate EV power-system developments using Navitas’ GaNFast power ICs and GeneSiC power MOSFETs, driving technical breakthroughs and facilitating the rapid deployment of high-voltage EV systems. GaN and SiC technologies enable improved efficiency, weight, and size, critical for EV on-board chargers (OBCs) and DC-DC converters to deliver faster charging, longer range, and greater system efficiency for electric vehicles.
Navitas recently introduced the industry’s first automotive ‘AEC-Plus’ qualified SiC MOSFETs in HV-T2PaK top-side cooled package, which offers a new level of reliability to meet the system lifetime requirements of the most demanding automotive and industrial applications. The latest generation of 650 V and 1200 V ‘trench-assisted planar’ SiC MOSFETs combined with an optimized, HV-T2PaK top-side cooled package, delivers the industry’s highest creepage of 6.45 mm to meet IEC-compliance for applications up to 1200V.
In April 2025, automotive grade GaNSafe™ ICs were introduced achieving AEC-Q100 and AEC-Q101 qualifications, showcasing GaN’s next inflection into the automotive market. The GaNSafe 4th generation family integrates control, drive, sensing, and critical protection features, enabling unprecedented reliability and robustness in high-power applications. It is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4 pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin.
“This award is a testament to Navitas’ technology leadership and commitment to the EV industry,” said Charles Zha, Navitas SVP and GM of APAC. “We are proud that partnering with VREMT — the leading global EV power solutions provider, our GaN and SiC solutions can empower ZEEKR, Volvo, and SMART and potentially more next-generation EV makers worldwide. Our unwavering commitment to ‘Electrify Our World’ will continue to drive innovation and collaboration as we lead the clean energy revolution in transportation and beyond.”
Original – Navitas Semiconductor
-
Navitas Semiconductor announced its partnership with BrightLoop supporting their latest series of hydrogen fuel-cell chargers with automotive qualified Gen 3 ‘Fast’ SiC (G3F) MOSFETs for heavy-duty agricultural transportation equipment.
BrightLoop offers leading-edge, top-performance solutions with power conversion efficiencies over 98% and extreme power densities up to 35 kW/kg and 60 kW/L. Their high-voltage, high-power multiverters paired to BrightLoop’s Power Flow Processor technology are designed to deliver exceptional performance in both AC and DC applications, such as energy management scenarios for fuel cells and heavy-duty applications, as well as HV network adaptation.
Navitas’ auto-qualified G3F SiC MOSFETs are incorporated into BrightLoop’s 250 kW HV-DC/DC converter, with an output of 950VDC at 480A, and can be paralleled to achieve megawatt power capability.
Enabled by 20 years of SiC innovation leadership, GeneSiC proprietary ‘trench-assisted planar’ technology provides world-leading performance over temperature, delivering high-speed, cool-running operation for high-power, high-reliability applications. G3F SiC MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors.
Trench-assisted planar technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across the complete operating range and offers up to 20% lower RDS(ON) under real-life operation at high temperatures compared to competition. All GeneSiC MOSFETs have the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling.
“We are proud to partner with BrightLoop, the established leaders in leading-edge high-power density and efficiency converters,” said Gene Sheridan, CEO and co-founder of Navitas. “Both companies provide the technology and system leadership to enable the roadmap for next generation, high-power density, high-reliability converter solutions”.
“Navitas offers leading-edge SiC technology where efficiency, ruggedness, and reliability are paramount. Our high power-density, smart, efficient, and scalable multiverters lead the industry by enhancing the quantity and quality of energy delivered to our customers”, said Florent Liffran, CEO and founder of BrightLoop.
Original – Navitas Semiconductor
-
Navitas Semiconductor announced a collaboration with NVIDIA on their next-generation 800 V HVDC architecture to support ‘Kyber’ rack-scale systems powering their GPUs, such as Rubin Ultra, enabled by GaNFast™ and GeneSiC™ power technologies.
NVIDIA’s next generation of 800V DC architecture aims to establish high-efficiency, scalable power delivery for next-generation AI workloads, to ensure greater reliability, efficiency, and reduced infrastructure complexity.
Today’s existing data center architecture uses traditional 54 V in-rack power distribution and is limited to a few hundred kilowatts (kW). Bulky copper busbars are required to transfer this low-voltage electricity from the rack-mounted power shelves to the compute trays. As power increases above 200 kW, this architecture runs into physical limits due to power density, copper requirements, and reduced system efficiency.
Modern AI data centers require gigawatts (GW) of power for the increasing demand for AI computation. Nvidia’s approach is to directly convert the 13.8 kV AC grid power to 800 V HVDC at the data center perimeter using solid state transformers (SST) and industrial-grade rectifiers, eliminating several AC/DC and DC/DC conversion steps, maximizing efficiency and reliability.
Due to the higher voltage level of 800 V HVDC, the thickness of copper wires can be reduced by up to 45%, due to I2R losses, where the same amount of power can be delivered with increased voltage and lower current. Using a traditional 54V DC system, over 200 kg of copper would be needed to power a 1MW rack, which is not sustainable for next-generation AI data centers with GW power demand.
The 800V HVDC directly powers the IT racks (eliminating the need for additional AC-DC converters) and is converted by DC-DC converters to lower voltages, which will drive GPUs, such as the Rubin Ultra.
Navitas is an established leader in AI data center solutions enabled by GaN and SiC technology. The high-power GaNSafe™ power ICs integrate control, drive, sensing, and critical protection features, enabling unprecedented reliability and robustness. GaNSafe is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin.
Additionally, Navitas offers a family of medium voltage (80-120V) GaN devices, which have been optimized for secondary side DC-DC conversion, delivering high-speed, high efficiency, and small footprint, for AI data centers PSUs with outputs of 48V-54V.
Enabled by 20 years of SiC innovation leadership, GeneSiC proprietary ‘trench-assisted planar’ technology provides world-leading performance over temperature, delivering high-speed, cool-running operation for high-power, high-reliability applications. G3F SiC MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors.
Offering the industry’s broadest voltage range – stretching from 650 V to ultra-high voltages of 2.3 kV to 6.5 kV, the SiC technology has been implemented in multiple projects for MW energy storage and grid-tied inverters with the Department of Energy (DoE).
Fig. 1. Navitas GaN and SiC technologies cover the complete power delivery from grid to the GPU.
In August 2023, Navitas introduced a high-speed, high-efficiency 3.2 kW CRPS, achieving a 40% smaller size than best-in-class, legacy silicon solutions for power-hungry AI and Edge computing. This was followed by the world’s highest power density 4.5 kW CRPS, achieving a ground-breaking 137 W/in3, and an efficiency of over 97%. In November 2024, Navitas released the world’s first 8.5 kW AI data center power supply, powered by GaN and SiC that could meet 98% efficiency, complying with the Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications. Additionally, Navitas created IntelliWeave, an innovative patented new digital control technique, that when combined with high-power GaNSafe and Gen 3-Fast SiC MOSFETs, enables PFC peak efficiencies to 99.3% and reduces power losses by 30% compared to existing solutions. Alongside the Computex exhibition in Taiwan, the latest release of their 12 kW PSU was presented at the Navitas ‘AI Tech Night’ on 21st May.
“We are proud to be selected by NVIDIA to collaborate on their 800 HVDC architecture initiative. Our latest innovations in high-power GaN and SiC technologies have seen world firsts and have created new inflections into markets such as AI datacenters and electric vehicles”, said Gene Sheridan, CEO and co-founder of Navitas. “With our wide portfolio range, we can support NVIDIA’s 800V HVDC infrastructure, from grid to the GPU. We appreciate that NVIDIA recognizes our technology and commitment to driving the next generation of data center power delivery.”
NVIDIA’s 800V HVDC architecture will improve end-to-end power efficiency up to 5%, reduce maintenance costs by 70% (due to fewer PSU failures), and lower cooling costs by directly connecting HVDC to the IT and compute racks.
Original – Navitas Semiconductor
-
Navitas Semiconductor has announced their latest 12 kW power supply unit (PSU) ‘designed for production’ reference design for hyperscale AI data centers with high-power rack densities of 120 kW.
The 12 kW PSU complies with Open Rack v3 (ORv3) specifications and Open Compute Project (OCP) guidelines. It utilizes Gen-3 Fast SiC MOSFETs, a novel ‘IntelliWeave™’ digital platform, and high-power GaNSafe ICs configured in 3-phase interleaved TP-PFC and FB-LLC topologies to ensure the highest efficiency and performance, with the lowest component count.
The 3-Phase interleaved totem-pole power factor correction (TP-PFC) is powered by Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology, which has been enabled by over 20 years of SiC innovation leadership and offers world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
IntelliWeave digital control provides a hybrid control strategy of both Critical Conduction Mode (CrCM) and Continuous Conduction Mode (CCM), for light-load to full-load conditions, ensuring maximum efficiency while maintaining a simplistic design with low component count. This results in a 30% reduction in power losses compared to existing Continuous Conduction Mode (CCM) solutions.
The 3-phase interleaved full-bridge (FB) LLC topology is enabled by 4th generation high-power GaNSafe ICs, integrating control, drive, sensing, and critical protection features that allow unprecedented reliability and robustness. GaNSafe is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with four pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin. Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLL and TOLT packages are available with a range of RDS(ON)typ. from 18 to 70 mΩ.
The PSU is 790 x 73.5 x 40 mm and has an input voltage range of 180 – 305 VAC, outputting up to 50 VDC and delivering 12 kW when using input voltages above 207 VAC and 10 kW below this. Additionally, it implements active current sharing and over-current, over-voltage, under-voltage, and over-temperature protections. It has an operating temperature range of -5 to 45oC, a hold-up time of ³20 ms at 12 kW, and an inrush current of £3 times the steady-state current below 20 ms. Cooling is via the PSU’s internal fan.
“The continuation and leadership of Navitas’ AI power roadmap has seen a quadrupling in output power – from 2.7 to 12 kW – in just over 24 months,” said Gene Sheridan, CEO and co-founder of Navitas. “This increase in power delivery is vital for the world’s data centers to support the exponential power demanded by the latest GPU architectures. The ‘designed for production’ PSU enables our customers to quickly implement a highly efficient, simple, and cost-effective solution to address the power delivery challenges for AI and hyperscale data centers.”
The 12 kW PSU was presented at Navitas’ ‘AI Tech Night’ on 21st May, alongside the Computex exhibition in Taiwan.
Original – Navitas Semiconductor
-
Navitas Semiconductor will host an “AI Tech Night” event in Taipei, Taiwan, bringing together industry experts, supply chain partners, and technology developers for keynote speeches, demonstrations, and interactive discussions. The event will focus on how high-power GaNSafe™ and GeneSiC™ technologies are transforming AI data center infrastructure by overcoming efficiency and power density challenges to meet the growing power demands of AI and hyperscale data centers. Navitas will debut its next-generation OCP data center power supply unit (PSU) reference design, which has been ‘designed for production’ and achieves the world’s highest power density, performance, and efficiency.
With each GPU power exceeding 1,000W and AI cluster computing demand doubling every three months, traditional power supply technologies are struggling to keep pace with the evolving needs for energy efficiency and power density in AI infrastructure. Navitas’ GaN and SiC solutions will showcase the breakthrough of conventional architectural limitations and enable more efficient, high-density, and sustainable data center development.
Navitas ‘AI Power Roadmap’ was created in 2023, focusing on next-generation AI data center power delivery. The initial PSU was a high-speed, high-efficiency 2.7 kW CRPS (common redundant power supply), which offered 2x higher power density and a 30% reduction in energy loss. A 3.2kW CRPS followed, achieving a 40% smaller size than best-in-class, legacy silicon solutions for power-hungry AI and Edge computing. Next was the world’s highest-power-density 4.5kW CRPS, achieving 137W/in3 and an efficiency of over 97%. In November 2024, Navitas released the world’s first 8.5kW AI data-center power supply powered by GaN and SiC that could meet 98% efficiency, complying with the Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications. Additionally, Navitas created IntelliWeave, a patented new digital control technique that, when combined with high-power GaNSafe and Gen 3-Fast SiC MOSFETs, enables PFC peak efficiencies of 99.3% and reduces power losses by 30% compared with existing solutions.
Navitas will also highlight the world’s first mass-produced 650V Bi-Directional GaNFast™ power ICs and IsoFast™ high-speed isolated gate drivers. These technologies drive a paradigm shift from traditional two-stage to single-stage power topologies, optimizing data center power supply design, reducing form factors, and increasing rack space utilization.
“The exponential growth of AI computing power poses stringent challenges for data center infrastructure. The debut of our latest AI data center PSU achieves dual breakthroughs in efficiency and power density, demonstrating Navitas’ continuous innovation in GaN and SiC technologies and deep understanding of the data center industry”, said Charles Zha, SVP and APAC GM of Navitas. “With years of focus on the Asia-Pacific market, we remain committed to aligning cutting-edge technologies with local needs and industry strengths. We look forward to collaborating with industry partners to explore how GaN and SiC innovation can drive efficiency and density upgrades in AI data centers, ensuring computing development progresses along with a sustainable future.”
The “AI Tech Night” will take place on May 21st, 2025, 6:30 pm-9:00 pm, at the Courtyard by Marriott Taipei. To participate in the ‘AI Tech Night’ event, please contact info@navitassemi.com.
Original – Navitas Semiconductor
-
Navitas Semiconductor announced the appointment of Cristiano Amoruso to the company’s board of directors, effective immediately.
Mr. Amoruso most recently served as Chief Executive Officer of Suniva, Inc., the largest private U.S.-based manufacturer of solar photovoltaic semiconductors, and as a partner at Lion Point Capital, L.P., a global investment firm. He is an accomplished investor with significant operating expertise and a strong track record of value creation in the technology and renewable energy industries across public and private companies.
“We are glad to welcome Cristiano to the board at this pivotal time for Navitas,” said Richard Hendrix, chair of the Navitas board. “Cristiano brings meaningful experience driving growth at semiconductor companies, and we are confident he will contribute to our efforts to capture the multi-billion dollar market opportunity ahead of us. Importantly, Cristiano’s appointment builds on our recent actions to strengthen our corporate governance and accelerate our path to profitability for the benefit of our stockholders.”
Mr. Amoruso commented, “Navitas’ gallium nitride (GaN) and silicon carbide (SiC) products have tremendous untapped potential and are accelerating a paradigm shift across the entire technology hardware industry, especially in power intensive applications like datacenters, solar power plants and electric vehicles. I am excited to join the Navitas board and look forward to working with management and my fellow directors to create long-term value.”
In connection with his appointment to the board, Mr. Amoruso will stand for election as an independent Class I director at the company’s 2025 annual stockholders’ meeting along with Gene Sheridan and Ranbir Singh. Additional details will be provided in Navitas’ definitive proxy statement for the meeting to be filed with the U.S. Securities and Exchange Commission (SEC).
Original – Navitas Semiconductor
-
Navitas Semiconductor introduced a new level of reliability to meet the system lifetime requirements of the most demanding automotive and industrial applications. Navitas’ latest generation of 650 V and 1200 V ‘trench-assisted planar’ SiC MOSFETs combined with an optimized, HV-T2PaK top-side cooled package, delivers the industry’s highest creepage of 6.45 mm to meet IEC-compliance for applications up to 1200V.
Navitas’ HV-T2PaK SiC MOSFETs significantly increase system-level power density and efficiency while improving thermal management and simplifying board-level design and manufacturability. Target applications include EV on-board chargers (OBC) & DC-DC converters, data-center power supplies, residential solar inverters & energy storage systems (ESS), EV DC fast chargers, and HVAC motor drives.
AEC-Q101 is an automotive industry standard developed by the Automotive Electronics Council (AEC) to establish common part-qualification and quality-system standards. Navitas has created an industry-first benchmark, ‘AEC-Plus’*, indicating parts qualified above and beyond the existing AEC-Q101 and JEDEC product qualification standards. This new benchmark showcases Navitas’ deep understanding of system-level lifetime requirements and a strong commitment to enabling rigorously designed and validated products for demanding mission profiles in automotive and industrial applications.
The ‘AEC-Plus’ qualification standards extend further into rigorous multi-lot testing and qualification. Key additions to the existing AEC-Q101 requirements include:
- Dynamic reverse bias (D-HTRB) & dynamic gate switching (D-HTGB) to represent stringent application mission profiles
- Over 2x longer power & temperature cycling
- Over 3x longer duration for static high-temperature, high-voltage tests (e.g. HTRB, HTGB).
- 200°C TJMAX qualification for overload operation capability
Navitas’ HV-T2PaK top-side cooled package, in an industry-standard compact form factor (14 mm x 18.5 mm), is optimized with an innovative groove design in the package mold compound that extends the creepage to 6.45 mm without reducing the size of the exposed thermal pad and ensuring optimal heat dissipation. In addition, the exposed thermal pad has a nickel, nickel-phosphorus (NiNiP) plating, as opposed to tin (Sn) plating from existing TSC package solutions, which is critical to preserving the post-reflow surface planarity of the exposed pad and ensuring thermally efficient and reliable attachment to the thermal interface material (TIM).
Enabled by over 20 years of SiC technology innovation leadership, Navitas’ GeneSiC™ ‘trench-assisted planar SiC MOSFET technology’ offers up to 20% lower on-resistance under in-circuit operation at high temperatures compared to competition and superior switching figure-of-merits which result in the lowest power losses across a wider operating range. All GeneSiC™ SiC MOSFETs have the highest-published 100%-tested avalanche capability, excellent short-circuit withstand energy, and tight threshold voltage distributions for easy paralleling.
The initial HV-T2PaK portfolio includes 1200 V SiC MOSFETs with on-resistance ratings ranging from 18 mΩ to 135 mΩ and 650 V SiC MOSFETs with on-resistance ratings ranging from 20 mΩ to 55 mΩ. Lower on-resistance (<15 mΩ) SiC MOSFETs in HV-T2PaK package will be announced later in 2025.
Original – Navitas Semiconductor
-
Navitas Semiconductor announced unaudited financial results for the first quarter ended March 31, 2025.
“Our first quarter featured many industry firsts, including the world’s first production release of GaN bi-directional ICs, a 12 kW AI data center power supply platform and unprecedented reliability standards for both GaN and SiC technology,” said Gene Sheridan, CEO and co-founder. “These technology and reliability achievements, combined with our $450M of design wins announced for last year, positions the company for important growth later this year and in 2026 and beyond. ”
1Q25 Financial Highlights
- Revenue: Total revenue was $14.0 million in the first quarter of 2025, compared to $23.2 million in the first quarter of 2024 and $18.0 million in the fourth quarter of 2024.
- Loss from Operations: GAAP loss from operations for the quarter was $25.3 million, compared to a loss of $31.6 million for the first quarter of 2024 and a loss of $39.0 million for the fourth quarter of 2024. On a non-GAAP basis, loss from operations for the quarter was $11.8 million compared to a loss of $11.8 million for the first quarter of 2024 and a loss of $12.7 million in the fourth quarter of 2024.
- Cash: Cash and cash equivalents were $75.1 million as of March 31, 2025.
Market, Customer and Technology Highlights:
- Announced the world’s first production-released 650 V bi-directional GaN ICs and IsoFast™ high-speed isolated gate-drivers creating a paradigm shift in power by enabling the transition from two-stage to single-stage topologies; targeted applications range widely across EV charging, solar micro-inverters, energy storage, and motor drives.
- Announced a new 12 kW platform design for data centers utilizing the latest GeneSiC™ and GaNSafe™ ICs including Intelliweave™ control technology to enable a doubling of total rack power up to 500 kW to support new generations of AI processors.
- Announced cumulative GaN shipments of over 250M since 2018 across four generations demonstrating unprecedented 100 ppb field reliability track record.
- Announced GeneSiC reliability demonstrated beyond auto-grade with new AEC Plus testing setting new industry standard.
- Announced GaNSafe technology qualification to the challenging Q101 standard and adoption in the industry’s first GaN EV on-board charger production design with Changan, a top EV maker in China and is on-track for a production ramp in early ’26.
- GeneSiC ultra-high voltage 2.3 kV to 6.5 kV targets megawatt-level new energy markets for EV roadside fast chargers, energy storage, renewable and grid infrastructure upgrades.
Business Outlook
- Second quarter 2025 net revenues are expected to be $14.0 to $15.0 million. Non-GAAP gross margin for the second quarter is expected to be 38.5% plus or minus 50 basis points, and non-GAAP operating expenses are expected to be approximately $15.5 million in the second quarter of 2025.
Original – Navitas Semiconductor
-
Navitas Semiconductor announced a new family of GaNSense™ Motor Drive ICs targeting home appliances and industrial drives up to 600 W.
Specifically designed for motor drive applications, this fully integrated solution combines two GaN FETs in a half-bridge configuration with drive, control, sensing, and autonomous protection. Compared to legacy silicon IGBT solutions, this results in a 4% higher efficiency, 40% PCB footprint reduction, and 15% lower system cost.
Key features include bidirectional lossless current sensing, which measures both positive and negative currents. This is critical in motor drives, given recirculating currents in the reverse direction between switching coil phases. The lossless sensing eliminates the need for external shunt resistors, resulting in higher efficiency, improved reliability, and a more compact design.
Turn-on and turn-off slew rates are fully adjustable, allowing designers to optimize EMI, performance, and maximize efficiency. The autonomous freewheeling function switches on the GaN IC upon detection of reverse current to reduce conduction losses, maximize efficiency, and reduce the size and cost of heatsinks.
The GaNSense Motor Drive IC family also includes several safety features such as high-and-low-side short circuit protection, over-temperature protection (OTP), and 2kV ESD on all pins.
The 650V family starts with NV6257 (2 x 170 mΩ, PQFN 6×8), NV6287 (2 x 170 mΩ, PQFN 8×10), and NV6288 (2 x 120 mΩ, PQFN 8×10), supporting drives up to 600 W.
Target applications focus on motor drives up to 600W, including air conditioners, heat pumps, washing machines, dryers, dishwashers, refrigerators, and hair dryers. For low-power industrial drives, applications range from pumps to circulators and fans.
Original – Navitas Semiconductor
