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Navitas Semiconductor has announced the sample availability of its new 3300V and 2300V ultra-high voltage (UHV) SiC products. Offered in power module, discrete, and known good die (KGD) formats, these devices set a new standard in performance and reliability for high-power applications including solid-state transformers, grid infrastructure, renewable energy, and AI data centers.
The new UHV devices are built on Navitas’ fourth-generation GeneSiC™ platform, featuring a proprietary Trench-Assisted Planar (TAP) MOSFET architecture. This design incorporates a multi-step electric field management profile that reduces voltage stress and enhances blocking performance compared to traditional planar and trench SiC MOSFETs. The TAP structure also improves avalanche robustness and long-term reliability, supported by optimal source contact engineering for better cell-pitch density and current spreading. These innovations lead to superior switching characteristics and lower on-resistance at high operating temperatures.
The new devices are available in the advanced SiCPAK™ G+ power module format, in both half-bridge and full-bridge configurations. These modules incorporate epoxy-resin potting technology that provides over 60% improvement in power cycling lifetime and more than 10x improvement in thermal shock reliability compared to conventional silicone-gel-based modules. Key features include:
- AlN DBC substrates for enhanced heat dissipation
- High-current press-fit pins with double the current-carrying capacity
- Discrete packages available in TO-247 and TO-263-7 formats
Navitas has introduced AEC-Plus, an industry-first reliability benchmark that goes beyond AEC-Q101 and JEDEC standards. This qualification covers a wide range of rigorous test protocols, including:
- Dynamic reverse bias (DRB) and dynamic gate switching (DGS) testing
- Over 3x extended high-temperature and high-voltage testing (HTRB, HTGB)
- HV-THB for modules and HV-H3TRB for discretes and KGD
- Extended power and temperature cycling
The 3300V and 2300V devices are also offered as known good die (KGD), enabling system designers to build custom high-performance modules. Navitas applies stringent production screening, including singulated die testing at room and elevated temperatures, and six-side optical inspection to ensure the highest levels of quality, reliability, and yield.
“Navitas’ new 3300V and 2300V SiC product portfolio allows our customers to push the boundaries of efficiency and reliability in solid-state transformers for AI data centers, as well as utility-scale battery energy storage and renewable energy to define a new standard for such mission-critical system applications,” said Paul Wheeler, Vice President and General Manager of the SiC Business Unit.
Wheeler added, “This line of reliable, high-performance ultra-high voltage power semiconductors is expected to be a significant step in our roadmap to 10 kV SiC solutions. By combining our proprietary Trench-Assisted Planar SiC MOSFET technology with innovative power packages, we are able to extend reliability qualification and support more stringent production screening, to deliver industry-leading performance and robustness.”
The new SiC portfolio underscores Navitas’ strategic commitment to advancing ultra-high voltage power electronics for critical energy infrastructure and high-density computing environments.
Original – Navitas Semiconductor
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Navitas Semiconductor and WT Microelectronics have expanded their strategic collaboration to strengthen technical support and regional supply chain capabilities for Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices across Asia.
As part of this updated agreement, Navitas has consolidated its distributor network, appointing WT Microelectronics as a key partner to lead customer engagement and design-in support. The partnership is aimed at improving service quality, streamlining logistics, and ensuring reliable product delivery to meet increasing demand in high-growth markets such as AI data centers, energy infrastructure, and industrial electrification.
WT Microelectronics will allocate additional technical and commercial resources to support this initiative, helping facilitate the integration of Navitas’ high-voltage and high-power components into critical systems across the region.
The enhanced collaboration aligns with Navitas’ broader strategic plans to scale its operations and improve customer responsiveness in core application sectors.
Original – Navitas Semiconductor
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GlobalFoundries and Navitas Semiconductor have announced a long-term strategic partnership focused on advancing gallium nitride (GaN) technology, design, and manufacturing capabilities within the United States. This collaboration aims to deliver next-generation GaN solutions for high-power applications including AI datacenters, performance computing, energy infrastructure, and industrial electrification—markets where power density and energy efficiency are critical.
Navitas Semiconductor, a pioneer in GaN and high-voltage silicon carbide (SiC) technologies, has already achieved volume GaN adoption across applications such as mobile fast chargers, performance computing, electric vehicles, and energy storage. Through this new initiative, the company plans to accelerate the deployment of GaN in high-power domains.
GlobalFoundries brings decades of semiconductor manufacturing experience, with a focus on scalable and high-reliability production. Under this partnership, the companies will jointly develop and manufacture GaN technology at GlobalFoundries’ Burlington, Vermont facility. Initial development is scheduled for early 2026, with volume production expected to begin later that year.
By combining GlobalFoundries’ advanced manufacturing infrastructure with Navitas Semiconductor’s proven device technology, the partnership is set to offer customers secure, high-performance GaN solutions developed domestically. The collaboration supports national security priorities and the transition to cleaner energy systems.
“GaN is transforming how the world moves power. This partnership represents a significant step forward for U.S. semiconductor leadership and the deployment of GaN technology to address essential applications,” said Tim Breen, CEO of GlobalFoundries.
Chris Allexandre, President and CEO of Navitas Semiconductor, added: “Our collaboration with GlobalFoundries ensures that Navitas can deliver the performance, efficiency, and scale required by high-power markets. Together, we are laying the foundation for next-generation applications essential to national competitiveness and energy sustainability.”
Original – Navitas Semiconductor
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Navitas Semiconductor Corporation has entered into a definitive securities purchase agreement for a private placement of 14,814,813 shares of Class A common stock at a price of $6.75 per share. The transaction is expected to close on or about November 10, 2025, subject to customary closing conditions.
The private placement is anticipated to generate gross proceeds of approximately $100 million, before deducting placement agent fees and offering-related expenses. Navitas intends to use the net proceeds to support working capital and general corporate purposes as part of its ongoing growth strategy.
Needham & Company is serving as the sole placement agent for the offering.
“This capital raise enables us to support Navitas’ transformation and accelerate our momentum into higher-power markets. We’re fueling and energizing the shift to Navitas 2.0, focusing our energy on the high-power markets that are shaping the future: AI data centers, performance computing, energy and grid infrastructure, and industrial electrification,” said Chris Allexandre, President and CEO of Navitas.
The securities are being issued in a private placement pursuant to Section 4(a)(2) of the Securities Act of 1933 and Regulation D and have not been registered under federal or state securities laws. The company plans to file a registration statement with the U.S. Securities and Exchange Commission to cover the resale of the shares issued, no later than five business days following the agreement date.
The private placement is not an offer to sell or a solicitation of an offer to buy, and the securities may not be sold in the United States without registration or an applicable exemption from registration requirements.
Original – Navitas Semiconductor
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FINANCIAL RESULTSNavitas Reports Third Quarter 2025 Results and Accelerates Strategic Pivot Toward High-Power Markets
November 4, 2025
2 Min ReadNavitas Semiconductor has announced unaudited financial results for the third quarter ended September 30, 2025.
Chris Allexandre, President and CEO of Navitas, commented, “I’m excited to be leading the Navitas 2.0 team at this pivotal moment, as demand accelerates across high-power semiconductor markets including AI data centers, performance computing, energy infrastructure, and industrial electrification. Our decade-long leadership in GaN and high-voltage SiC technologies positions us strongly to capitalize on these megatrends. With a clear strategic shift from lower-margin consumer and mobile markets to more sustainable and profitable high-power segments, we are executing focused changes in resource allocation, product development, and go-to-market strategy to drive long-term value for customers, employees, and shareholders.”
Financial highlights for the third quarter of 2025:
- Total revenue was $10.1 million, compared to $21.7 million in the third quarter of 2024 and $14.5 million in the second quarter of 2025
- GAAP loss from operations was $19.4 million, improving from a loss of $29.0 million in Q3 2024 and $21.7 million in Q2 2025
- Non-GAAP loss from operations was $11.5 million, compared to $12.7 million in Q3 2024 and $10.6 million in Q2 2025
- Cash and cash equivalents totaled $150.6 million as of September 30, 2025
Market, technology, and customer developments:
- Recognized by NVIDIA as a power semiconductor partner supporting its next-generation 800V DC AI factory architecture, reflecting Navitas’ leadership in GaN and high-voltage SiC technologies
- Expanded portfolio with newly launched 100V and 650V GaNFast FETs, GaNSafe ICs, and high-power SiC products tailored for AI power infrastructure
- Currently sampling 2.3kV and 3.3kV SiC modules to energy storage and grid-infrastructure customers
Near-term outlook:
For the fourth quarter of 2025, net revenue is projected to be approximately $7.0 million, plus or minus $0.25 million. This reflects the company’s decision to deprioritize lower-margin mobile and consumer businesses in China, streamline its distribution network, and reduce channel inventory in preparation for growth in high-power markets. Non-GAAP gross margin is expected to be around 38.5 percent, plus or minus 50 basis points. Non-GAAP operating expenses are expected to be approximately $15.0 million.
Navitas emphasized that these strategic moves are designed to align its product mix with long-term industry demand trends and strengthen its presence in key markets such as AI computing, industrial electrification, and renewable energy.
Original – Navitas Semiconductor
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GigaDevice has officially announced the launch of its Digital Power Joint Lab in collaboration with Navitas Semiconductor, a leader in gallium nitride (GaN) and silicon carbide (SiC) power technologies. The partnership brings together GigaDevice’s GD32 microcontroller (MCU) expertise and Navitas’ high-speed, high-frequency GaNFast and GeneSiC semiconductor technologies to accelerate the development of advanced digital power solutions for emerging markets such as AI data centers, renewable energy, energy storage, charging infrastructure, and electric vehicles.
Before its formal launch, the joint lab achieved several notable milestones, including 4.5 kW and 12 kW server power supply designs and a 500 W single-stage photovoltaic (PV) micro-inverter, addressing the industry’s growing need for high-efficiency and high-power-density systems.
The 500 W PV micro-inverter integrates GigaDevice’s GD32G553 MCU with Navitas’ GaNFast Bi-Directional power ICs in a single-stage DC-AC conversion architecture. The design achieves over 97.5 percent peak efficiency, 97 percent CEC efficiency, and 99.9 percent MPPT efficiency, while eliminating the intermediate DC-DC stage to improve power density and reduce system cost. Magnetic integration and GaNFast technology further minimize component count and losses.
For AI computing applications, the 4.5 kW and 12 kW AI server power supply solutions combine GigaDevice’s MCU control with Navitas’ GaNSafe ICs and Gen-3 Fast SiC MOSFETs. The 12 kW model meets OCP, ORv3, and CRPS standards, achieving an exceptional 97.8 percent peak efficiency, surpassing the 80 PLUS “Ruby” benchmark for high-performance data center power.
The new Digital Power Joint Lab will focus on co-developing system-level reference designs and application-specific power architectures that integrate intelligent control, high-frequency operation, and next-generation semiconductor technologies. Through this collaboration, GigaDevice and Navitas aim to enable smarter, greener, and more sustainable power systems that support the accelerating global demand for energy-efficient digital infrastructure.
Original – GigaDevice Semiconductor
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Navitas Semiconductor has announced new progress in developing high-performance gallium nitride (GaN) and silicon carbide (SiC) power devices designed to enable NVIDIA’s 800 VDC data center architecture for next-generation AI factory computing platforms.
With AI workloads driving data center power consumption into the megawatt range, traditional 54 V power distribution systems are reaching their limits. The shift to 800 VDC architecture offers higher efficiency, reduced copper use, simplified thermal management, and compatibility with global low-voltage DC standards. The new system allows direct conversion from 13.8 kVAC utility power to 800 VDC, eliminating multiple conversion stages and improving overall system reliability.
Navitas’ GaNFast™ and GeneSiC™ technologies power every stage of the AI data center — from grid connection to GPU-level conversion. The company’s new 100 V GaN FETs deliver high power density and thermal performance in dual-sided cooled packages, optimized for DC-DC conversion on GPU boards. Manufactured using a 200 mm GaN-on-Si process in partnership with Power Chip, these devices support scalable, high-volume production.
In addition, Navitas’ 650 V GaN portfolio introduces new high-power GaN FETs and GaNSafe™ power ICs, which integrate drive, sensing, protection, and control functions for enhanced safety and robustness. GaNSafe™ features ultra-fast short-circuit protection, 2 kV ESD tolerance, programmable slew-rate control, and a simple 4-pin configuration for easy implementation.
Navitas’ GeneSiC™ SiC technology, based on its proprietary trench-assisted planar structure, provides high-speed, cool-running performance and wide voltage coverage up to 6,500 V. These devices are already being used in grid-tied inverters, large-scale energy storage systems, and U.S. Department of Energy (DoE) projects.
“As NVIDIA drives transformation in AI infrastructure, we’re proud to support this shift with GaN and SiC power solutions that enable the efficiency, scalability, and reliability required by next-generation data centers,” said Chris Allexandre, President and CEO of Navitas. “The move from legacy 54 V systems to 800 VDC is not just an evolution — it’s a complete transformation of data center power.”
Navitas’ innovations in GaN and SiC technologies reflect its expanded focus beyond mobile and consumer markets toward powering megawatt-scale AI factories, industrial platforms, and smart energy infrastructure with high-efficiency, high-density semiconductor solutions.
Original – Navitas Semiconductor
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Navitas Semiconductor announced that its Board of Directors has appointed Chris Allexandre as President and Chief Executive Officer, effective September 1, 2025. Allexandre, who will also join the Company’s Board of Directors, succeeds Gene Sheridan, a Navitas founder, who will step down as President and CEO and from the Board on August 31, 2025.
“We are excited to welcome Chris Allexandre as our new President and CEO,” said Richard J. Hendrix, Chairman of Navitas’ Board of Directors. “Chris is joining Navitas at a pivotal moment in its evolution. We believe his track record of driving transformation and delivering sustainable and profitable growth, operational excellence and business leadership in power semiconductor markets makes him the right leader for the next chapter of Navitas. On behalf of the Board of Directors, I’d like to thank Gene Sheridan for his vision in creating and leading Navitas over the last decade. Gene has established an exceptional company that stands ready to pursue the next phase of electrification in higher-power applications ideally suited for Navitas’ portfolio of GaN and SiC solutions. We deeply appreciate Gene’s leadership and impact, and his invaluable contributions to the Board’s succession planning and recruiting efforts, which have brought Navitas to this important transition point.”
“I am incredibly proud of what we have accomplished at Navitas,” said Sheridan, reflecting on his 11-year tenure at the company. “Building the industry’s only next-gen, pure-play power semi company has been the privilege of a lifetime. As we look to the future, I’m confident that Chris Allexandre is the right choice to lead Navitas in its mission to Electrify Our World.”
Allexandre brings more than 25 years of experience in the semiconductor industry. Most recently, he served in senior executive roles at Renesas Electronics Corporation, including Senior Vice President and General Manager of its Power Division from October 2023. Allexandre oversaw Renesas’ $2.5 billion power management business and led the pivot and execution of its power strategies toward the cloud infrastructure, automotive and industrial markets, including Renesas’ acquisition and integration of Transphorm, Inc., a supplier of GaN solutions, in June 2024. Allexandre was previously Renesas’ Chief Sales and Marketing Officer from 2019 to 2023.
“I am honored and thrilled to join Navitas and look forward to working with this world-class team to accelerate our leadership in GaN and SiC technologies,” said Allexandre. “With power demand growing in AI data center and critically needed energy infrastructure, I see promising opportunities to drive expansion in these important markets. I also want to thank Gene for his great support planning for this transition, and for everything he has done for Navitas.”
Prior to his tenure at Renesas, Allexandre held executive roles at Integrated Device Technology, Inc. (IDT) (acquired by Renesas in 2019) as Senior Vice President of Sales and Marketing; at NXP Corporation as Senior Vice President, Worldwide Sales for Mass Market; and at Fairchild Semiconductor International, Inc. as Senior Vice President of Worldwide Sales, Marketing and Business Operations. Allexandre began his career at Texas Instruments Incorporated, beginning in its New College Graduate rotation program, and over 16 years progressing in leadership through a series of business and sales roles based in Europe and China, becoming TI’s Vice President of Sales for EMEA and a member of TI’s strategic leadership team in 2012.
Allexandre’s extensive management experience spans analog, power, mixed-signal and digital products across cloud, industrial, mobile, consumer, telecom, and automotive markets.
Allexandre holds a Master of Science in Electrical Engineering from the Institut Supérieur de l’Électronique et du Numérique (ISEN) in Lille, France.
Original – Navitas Semiconductor
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Navitas Semiconductor announced unaudited financial results for the second quarter ended June 30, 2025.
“Despite industry-wide headwinds, I am pleased with our teams’ Q2 performance,” said Gene Sheridan, CEO and co-founder. “We are sharpening our focus on AI data centers and energy infrastructure, built on our collaboration with NVIDIA and other leaders in the sector. We raised $100 million in additional capital through the sale of approximately 20 million common shares and announced a new 8”, lower cost GaN foundry relationship for expanded capacity, both of which support our plans to address this fast growing market. We were successful in creating an all-new market for GaN mobile chargers over the past five years, and now we intend to create an even bigger new market encompassing both GaN and SiC for AI data centers and related, critically-needed energy infrastructure. We estimate that GaN and SiC technologies can support a 100x increase in server rack power capacity for AI data centers and an expanded $2.6B market potential by 2030.”
2Q25 Financial Highlights
- Revenue: Total revenue was $14.5 million in the second quarter of 2025, compared to $20.5 million in the second quarter of 2024 and $14.0 million in the first quarter of 2025.
- Loss from Operations: GAAP loss from operations for the quarter was $21.7 million, compared to a loss of $31.1 million for the second quarter of 2024 and a loss of $25.3 million for the first quarter of 2025. On a non-GAAP basis, loss from operations for the quarter was $10.6 million compared to a loss of $13.3 million for the second quarter of 2024 and a loss of $11.8 million in the first quarter of 2025.
- Cash: Cash and cash equivalents grew to $161.2 million as of June 30, 2025.
Market, Customer and Technology Highlights:
- NVIDIA selected Navitas for development collaboration to support next-generation 800V data centers; opportunity leveraging Navitas’ full portfolio of GaN and SiC across three power conversation stages.
- Stage 1: Solid-State Transformers (SSTs) expected to replace antiquated Low-Frequency Transformers (LFTs), leveraging Navitas’ unique Ultra-High Voltage (UHV) SiC to improve the efficiency and robustness of the power grid, creating a $0.5B/yr SiC market potential by 2030.
- Stage 2: 800V DC/DC can leverage Navitas’ high-voltage GaN and SiC, combined with our new 80-200V GaN to support highest efficiency and density with a $1B/yr GaN and SiC market potential by 2030.
- Stage 3: 48V DC/DC to power AI processor can utilize Navitas’ new 80-200V GaN to support highest efficiency and density in this $1.2B/yr market potential by 2030.
- Development timeline: For each stage, initial customer evaluations are complete with final engineering samples expected in Q4; anticipate final supplier selections and system designs completed in 2026 in advance of volume production in 2027.
- Announced partnership with Powerchip for manufacturing best-in-class 200mm (8”) 180nm GaN to support plans for higher levels of integration, with expected lower costs and greater capacity, including to support our roadmap and growth goals for AI data centers.
- $97M of net cash proceeds were generated from the sale of common shares which will provide additional capital to support our development and growth expectations primarily for AI data centers and related energy infrastructure markets.
- Navitas will sharpen focus within mobile, consumer and appliance to serve and lead the high-end, premium segments, which are expected to reduce revenue dependence on these sectors, improve margins over time, and enable increased focus and investment in AI data centers and energy infrastructure sectors without an increase in near-term operating expenses.
- Continuing leadership in high-end mobile GaN charger market, Xiaomi and Navitas announced world’s smallest and fastest charger to date, delivering 90W in the size of typical 12W silicon charger.
Near Term Business Outlook
- Third quarter 2025 net revenues are expected to be $10.0 million, plus or minus $0.5 million largely due to China tariff risks and more selective mobile strategy. Non-GAAP gross margin for the third quarter is expected to be 38.5% plus or minus 50 basis points, and non-GAAP operating expenses are expected to be approximately $15.5 million in the third quarter of 2025.
Original – Navitas Semiconductor
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Navitas Semiconductor announced that Xiaomi’s next-generation 90W GaN charger will be powered by Navitas’ GaNSense Control ICs.
As the world’s smallest 90 W charger, this ultra-compact, high-power-density form-factor measures just 34 × 45 × 34 mm and weighs only 65 grams—approximately half the size and a third the weight of typical GaN chargers.
The charger integrates Navitas’ NV9580 GaNSense Control power IC on the primary side and the NV9701 synchronous rectification controller IC on the secondary side. The GaNSense Control family combines 4th generation GaN power with high-frequency control functionality. It provides all the benefits of a monolithically integrated GaN power FET and GaN drive, plus a controller and protection features in a single surface-mount package for high-density, high-efficiency chargers, adapters, and auxiliary power designs.
GaNSense Control ICs deliver the highest-frequency operation to minimize system size and weight. Integrated features such as lossless current sensing, high-voltage start-up, and elimination of VDD inductor reduce component count and increase system efficiency. With transient voltage breakdown up to 800 V and no PCB hotspots, Navitas’ GaNSense Control ICs deliver best-in-class efficiency in the smallest form factor.
“The launch of Xiaomi’s 90W GaN charger marks a new milestone in our long-standing collaboration with Xiaomi,” said Charles Zha, SVP and APAC GM of Navitas. “Combining the innovation of GaNSense Control ICs and Xiaomi’s leading system expertise, we have delivered a new benchmark for ultra-portable fast-chargers. Navitas will continue our partnership with Xiaomi to continue future innovations with our GaN technology.”
Original – Navitas Semiconductor
