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Mitsubishi Electric Corporation announced that it will begin shipping samples of two new S1-Series High Voltage Insulated Gate Bipolar Transistor (HVIGBT) modules, both rated at 1.7kV, for large industrial equipment such as railcars and DC power transmitters from December 26. Thanks to proprietary Insulated Gate Bipolar Transistor (IGBT) devices and insulation structures, the new modules offer excellent reliability and low power loss and thermal resistance, which are expected to increase the reliability and efficiency of inverters in large industrial equipment.
Mitsubishi Electric’s 1.7kV HVIGBT modules, first released in 1997 and highly regarded for their excellent performance and high reliability, have been widely adopted for inverters in power systems.
The new S1-Series modules incorporate Mitsubishi Electric’s proprietary Relaxed Field of Cathode (RFC) diode, which increases the Reverse Recovery Safe Operating Area (RRSOA) by 2.2 times compared to previous models for improved inverter reliability. In addition, the use of an IGBT element with a Carrier Stored Trench Gate Bipolar Transistor (CSTBT) structure helps reduce both power loss and thermal resistance for more efficient inverters.Furthermore, Mitsubishi Electric’s proprietary insulation structure increases the insulation voltage resistance to 6.0kVrms, 1.5 times that of previous products, resulting in more flexible insulation designs for compatibility with a wide range of inverter types.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation announced that it will invest approximately 10 billion yen to construct a new facility for the assembly and inspection of power semiconductor modules at its Power Device Works in Fukuoka Prefecture, Japan. The plant, which was originally announced on March 14, 2023, is scheduled to begin operations in October 2026.
As the primary facility for assembling and inspecting power semiconductor modules, the plant will consolidate previously dispersed assembly and inspection production lines within the site to streamline production, from the incoming of components through manufacturing and final shipment. New systems will be implemented to automate the management of manufacturing processes and the transportation of products for improved productivity. In addition, the company’s integrated system covering everything from design, development and production technology verification to manufacturing will be strengthened to enhance product development.
Mitsubishi Electric expects the new plant to support its rapid and stable supply of products to meet market needs in response to the anticipated increases in demand for power semiconductors. As a result, the company envisions contributing to the energy efficiency of power-electronics devices in various applications, as well as the Green Transformation (GX).
In connection with the construction of the new plant, Fukuoka Prefecture has designated Mitsubishi Electric for the second time as a corporate entity of the Green Asia International Strategic Comprehensive Special Zone. By utilizing the preferential incentives of this special zone, Mitsubishi Electric will be able to strengthen the production capabilities of its Power Device Works’ new plant in Fukuoka Prefecture.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation announced that it will begin shipping samples of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) bare die for use in drive-motor inverters of electric vehicles (EVs), plug-in hybrid vehicles (PHEVs) and other electric vehicles (xEVs) on November 14.
Mitsubishi Electric’s first standard-specification SiC-MOSFET power semiconductor chip will enable the company to respond to the diversification of inverters for xEVs and contribute to the growing popularity of these vehicles. The new SiC-MOSFET bare die for xEVs combines a proprietary chip structure and manufacturing technologies to contribute to decarbonization by enhancing inverter performance, extending driving range and improving energy efficiency in xEVs.
Mitsubishi Electric’s new power semiconductor chip is a proprietary trench SiC-MOSFET that reduces power loss by about 50% compared to conventional planar SiC-MOSFETs. Thanks to proprietary manufacturing technologies, such as a gate oxide film process that suppresses fluctuations in power loss and on-resistance, the new chip achieves long-term stability to contribute to inverter durability and xEV performance.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation announced its consolidated financial results for the second quarter (first half), ended September 30, 2024, of the current fiscal year ending March 31, 2025 (fiscal 2025).
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation announced that its Power Device Works’ Fukuyama Factory has begun large-scale supply of power semiconductor chips made from 12-inch silicon (Si) wafers for the assembly of semiconductor modules.
The advanced Si power-semiconductor modules will initially be used in consumer products. Going forward, Mitsubishi Electric expects to contribute to green transformation (GX) by providing a stable and timely supply of semiconductor chips to meet the growing demand for energy-saving power-electronics devices in various applications.
The Fukuyama Factory processes wafers for the production of Si power-semiconductors. The factory is playing a key role in Mitsubishi Electric’s medium-term plan to double its wafer processing capacity for Si power- semiconductors by fiscal 2026 compared to five years earlier. By supplying large quantities of 12-inch Si wafers for power semiconductor chips, the company will ensure stable production of advanced Si power-semiconductor modules for energy-saving power-electronics equipment.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation announced its consolidated financial results for the first quarter, ended June 30, 2024, of the current fiscal year ending March 31, 2025 (fiscal 2025).
- Q1 FY25: Revenue ¥1,286.4 bn (+¥66.1 bn YoY), Operating Profit ¥58.6 bn (-¥2.3 bn YoY)
- Revenue achieved a new record high due primarily to an increase in the infrastructure segment and the impact of the weaker yen.
- Operating profit remained at the same level YoY due to the impact of a decrease in volume in the factory automation systems business and the impact of rising material and other procurement costs.
- FY25 forecast: Revenue ¥5,390.0 bn (+¥90.0 bn compared to the previous forecast), Operating Profit ¥400.0 bn (unchanged from the previous announcement)
- The revenue forecast has been revised upward partly due to a reconsideration of foreign exchange rates, while incorporating the impact of the delay in market recovery for factory automation systems.
- The company will steadily implement initiatives to achieve earnings targets, including improvements in product prices to reflect the impact of rising procurement costs.
Semiconductor & Device Segment
Revenue (YoY), Billions of yen Operating profit (YoY),
Billions of yenOperating profit margin (YoY), Billions of yen 74.5(+6.3) 11.5(+4.8) 15.5%(+5.7pt) - The market saw robust demand for power modules used in railway & power transmission applications.
- Orders decreased YoY due primarily to a decrease in power modules. Revenue increased YoY due mainly to the impact of the weaker yen as well as an increase in power modules used in automotive applications and other factors.
- Operating profit increased YoY due mainly to increased revenue.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation has begun shipping low-current 3.3kV/400A and 3.3kV/200A versions of a Schottky barrier diode (SBD) embedded silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) module for large industrial equipment, including rolling stock and electric power systems, from today, June 10.
Together with the existing 3.3kV/800A version, the newly named UnifullTM series comprises three modules to meet the growing demand for inverters capable of increasing power output and power conversion efficiency in large industrial equipment. The new modules will be exhibited at major trade shows, including Power Conversion Intelligent Motion (PCIM) Europe 2024 in Nuremberg, Germany from June 11 to 13.
Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on March 29, feature an optimized package structure to reduce switching loss and improve SiC performance. Compared to existing power modules, UnifullTM modules, significantly reduce switching loss and contribute to higher power output and efficiency in large industrial equipment, making them suitable for auxiliary power supplies in railcars and drive systems with relatively small capacities.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation announced that it will launch a web-based service on June 28 to provide data on the design and validation of a proprietary prototype inverter equipped with a module containing three LV100 insulated gate bipolar transistors (IGBTs), aiming to help customers accelerate their development of high-power inverters for applications such as photovoltaic power-generation systems.
Customers involved in developing prototype inverter systems with LV100 packages are expected to use reference information provided by the service to reduce their design, manufacture and validation workloads. The service will be exhibited at major trade shows, including Power Conversion Intelligent Motion (PCIM) Europe 2024 in Nuremberg, Germany from June 11 to 13.
The prototype inverter includes a package of three parallel LV100 industrial IGBTs in a module measuring 100mm x 140mm module, typical of those used in high-power inverter systems. The reference data will include design data, such as geometry, component layout and electrical circuitry, as well as evaluation data such as temperatures, short-circuit protection, current balance and computer-aided engineering (CAE) validation results.Original – Mitsubishi Electric
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Power Integrations announced the launch of the SCALE-iFlex™ XLT family of dual-channel plug-and-play gate drivers for operation of single LV100 (Mitsubishi), XHP™ 2 (Infineon), HPnC (Fuji Electric) and equivalent semiconductor modules up to 2300 V blocking voltage for wind, energy storage and solar renewable energy installations.
This single-board driver enables active thermal management of inverter modules for improved system utilization and reduces the bill-of-material count for increased reliability.
Thorsten Schmidt, product marketing manager at Power Integrations commented: “It’s a real challenge to build a single-board gate driver for these ‘new dual’ style IGBT modules. Our compact new SCALE-iFlex XLT gate drivers fit inside the outline of the module, allowing the drivers to be mounted on the module, which gives converter system designers a high degree of mechanical design freedom.”
SCALE-iFlex XLT dual-channel gate drivers feature Negative Temperature Coefficient (NTC) data reporting – an isolated temperature measurement of the power module – which allows accurate thermal management of converter systems. This enables system designers to optimize thermal design and obtain a 25 to 30 percent converter power increase from the same hardware.
The isolated NTC readout also reduces hardware complexity, eliminating multiple cables, connectors and additional isolation barrier crossing circuits. The new gate drivers employ Power Integrations’ SCALE-2 chip set which minimizes component count, enhancing reliability. The gate driver board also protects the power switches in the event of a short-circuit.
Original – Power Integrations
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Mitsubishi Electric Corporation announced its consolidated financial results for fiscal 2024 (April 1, 2023 – March 31, 2024).
Consolidated Financial Results:
- Revenue: 5,257.9 billion yen (5% increase year-on-year)
- Operating profit: 328.5 billion yen (25% increase year-on-year)
- Profit before income taxes: 365.8 billion yen (25% increase year-on-year)
- Net profit attributable to Mitsubishi Electric Corp. stockholders: 284.9 billion yen (33% increase year-on-year)
The economy in fiscal 2024 continued to see moderate recovery in Japan, however, recovery in consumer spending came to a standstill recently. In the U.S., the economy continued to see recovery primarily in consumer spending despite monetary tightening and other factors.
In China, the economy showed weakness in recovery due to sluggish export as well as slower domestic demand resulting from the real estate recession and other factors. In Europe, both the corporate and household sectors were stagnant due primarily to monetary tightening.
In this environment, the Mitsubishi Electric Group has been working harder than ever to maximize profitability by accelerating business transformation and its business portfolio strategy under its business area management structure, while continuously implementing initiatives to bolster its competitiveness and business structure.
Original – Mitsubishi Electric
