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Mitsubishi Electric Corporation, Institute of Science Tokyo, University of Tsukuba and Quemix Corporation announced a world-first explanation of how hydrogen creates free electrons in silicon through its interaction with specific crystal defects—an advance that can cut power losses in insulated gate bipolar transistors (IGBTs) and open pathways for future ultra-wide bandgap devices.
Using first-principles calculations alongside electrical, optical and ESR measurements, the team showed that when hydrogen binds near the I4 defect (an interstitial silicon pair), it shifts the defect’s electronic states to favor electron release; the electron associated with hydrogen moves to the defect, which then emits a free electron.
Mitsubishi Electric also reported technical demonstrations on 1,200 V-class devices showing total power-loss reductions of 10% in IGBTs and 20% in diodes versus its 7th-generation products—performance gains linked to the newly clarified hydrogen mechanism and complementary substrate thinning.
Beyond silicon, initial calculations suggest the approach could help control electron levels in ultra-wide bandgap materials such as diamond and AlN, which are notoriously difficult to dope, potentially benefiting power semiconductors, RF devices and quantum sensors.
The collaborators aim to extend this mechanism to next-generation materials to further improve device efficiency and support decarbonization goals.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation will begin shipping samples on January 21 of four new trench silicon carbide MOSFET bare dies for power electronics equipment, including electric-vehicle traction inverters, onboard chargers, and power supplies for renewable energy such as solar. The new bare dies are designed to help embed advanced SiC devices directly into systems to lower power consumption while maintaining performance.
The devices will be showcased at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21–23, with additional exhibitions planned in North America, Europe, China, India and other regions.
Growing decarbonization efforts are expanding the market for high-efficiency power electronics. Demand is rising for power semiconductors that enable EV traction inverters and renewable-energy systems to cut losses while preserving performance and quality.
Since 2010, Mitsubishi Electric has shipped SiC power modules that reduce energy use in air conditioners, industrial equipment and railway inverters. To meet the shift toward advanced bare-die integration, the company is introducing four new trench SiC-MOSFET bare dies that leverage a proprietary trench structure to cut power loss by approximately 50% versus planar SiC-MOSFETs. Proprietary manufacturing, including Mitsubishi Electric’s gate oxide film process, suppresses variation in power loss and on-resistance, supporting stable, long-term quality.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation has announced the launch of new standard-isolation (6.0 kVrms) and high-isolation (10.2 kVrms) modules in its 4.5 kV / 1,200 A XB Series of high-voltage insulated-gate bipolar transistors (HVIGBTs), scheduled for market release on December 9, 2025.
These newly developed high-capacity power semiconductor modules are designed to deliver improved moisture resistance and operational reliability, supporting efficient inverter performance in large-scale industrial equipment such as railcars, even under challenging environmental conditions including outdoor use.
The advanced HVIGBT modules are equipped with IGBT elements featuring Mitsubishi Electric’s proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT) structure. Through the integration of new electric field relaxation and surface charge control mechanisms, the modules achieve a reduction of approximately 30% in chip termination region size. Moreover, the new devices deliver around 20 times greater moisture resistance compared to existing products, making them well-suited for high-humidity environments.
In terms of performance improvements, the modules offer approximately 5% lower total switching loss relative to earlier models and demonstrate about 2.5 times higher reverse-recovery safe-operating area (RRSOA) tolerance. These enhancements collectively contribute to increased efficiency, greater reliability, and extended inverter life cycles in demanding industrial applications.
Mitsubishi Electric plans to showcase the new HVIGBT modules at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21 to 23, 2026, with additional exhibitions planned across North America, Europe, China, India, and other global regions.
With these technological advancements, the company aims to support the broader adoption of environmentally responsible power solutions and contribute to global carbon neutrality goals.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation has signed a basic agreement with Taiwan’s Industrial Technology Research Institute (ITRI), in collaboration with Mitsubishi Electric Taiwan Co., Ltd., to jointly develop high-voltage, high-current power conversion systems (PCSs) that use advanced power semiconductors for renewable energy applications such as solar and wind power.
Under this partnership, Mitsubishi Electric will provide its high-efficiency power semiconductor modules, while Mitsubishi Electric Taiwan contributes its market expertise. ITRI will apply its system integration and power conversion technologies to create a megawatt-class PCS prototype for demonstration testing. The collaboration aims to advance technology that efficiently converts electricity from renewable sources while supporting the growth of Taiwan’s renewable energy ecosystem.
Mitsubishi Electric and its Taiwan subsidiary plan to share design insights and test results with PCS manufacturers, helping them optimize their products using Mitsubishi Electric’s power semiconductor modules. ITRI will also offer related design documentation and data to support local industry development. Through this effort, both organizations aim to contribute to the global transition toward low-carbon, sustainable energy systems.
As renewable energy generation expands worldwide, demand for large-scale PCSs capable of converting electricity between direct current (DC) and alternating current (AC) continues to grow—particularly for megawatt-class systems used in large solar or wind installations.
Mitsubishi Electric brings decades of experience in producing reliable, high-voltage, high-current semiconductor modules used in renewable energy generation, energy storage, and transmission. Known for their durability and stable performance in challenging environments, these modules are widely adopted across global markets.
ITRI, a leading research institute focused on the circular economy, low-carbon manufacturing, and renewable technologies, has extensive expertise in high-voltage and high-current power systems. It has played a key role in advancing Taiwan’s technology industries through innovation and collaboration with local companies.
Jwu-Sheng Hu, Executive Vice President at ITRI, said that the partnership represents a major step forward in Taiwan’s energy transition. He noted that as power systems evolve to accommodate renewable sources, stability and efficiency are becoming increasingly important. The collaboration with Mitsubishi Electric, Hu said, will combine ITRI’s system integration strengths with Mitsubishi Electric’s semiconductor expertise to improve green energy integration and strengthen Taiwan’s role in the global clean energy supply chain.
Masayoshi Takemi, Executive Officer and Group President of the Semiconductor & Device Group at Mitsubishi Electric, described the agreement as an important milestone for advancing renewable energy adoption. He said the partnership will help accelerate the development of megawatt-class power conversion systems using Mitsubishi Electric’s power semiconductor technologies. Takemi added that Mitsubishi Electric remains committed to supporting a sustainable society through solutions that balance environmental responsibility with business growth.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation announced that it has developed a new compact version of its DIPIPM power semiconductor modules specifically for use in consumer and industrial equipment such as packaged air conditioners and heat pump heating and hot water systems. The new Compact DIPIPM series of products comprises the PSS30SF1F6 (rated current 30A / rated voltage 600V) and the PSS50SF1F6 (rated current 50A / rated voltage 600V), and samples will begin shipping on September 22.
By utilizing reverse-conducting insulated-gate bipolar transistors (RC-IGBTs), the module’s footprint has been reduced to almost 53% of that of the company’s conventional Mini DIPIPM Ver.7 series of products, enabling more compact inverter substrates in packaged air conditioners and other applications. The new products will be exhibited at Power Conversion and Intelligent Motion (PCIM) Asia Shanghai 2025 in Shanghai, China, from September 24 to 26.
Power semiconductors are key devices that efficiently convert electricity from DC to AC, and demand for them has accordingly been rising in recent years. Power semiconductor modules for packaged air conditioners and heat pump heating and hot water systems are used in the power conversion equipment of inverters that control outdoor unit compressors and fans.
Globally, the shift to inverters is gathering pace in order to achieve energy savings in air conditioning systems, contributing to the realization of a decarbonized society. In this context, there is a growing need for more compact outdoor packaged air conditioner and heat pump components, not only to improve performance but also to reduce their footprint, leading to demand for smaller components such as inverter substrates.
In 1997 Mitsubishi Electric commercialized the DIPIPM intelligent power semiconductor module with a transfer mold structure; this integrated switching elements and the control ICs that drove and protected them. These have since been widely adopted in inverters for air conditioners, washing machines, heating and hot water systems, and industrial motors, helping to achieve a more compact inverter design and improved energy efficiency. The footprint of the company’s new Compact DIPIPM series of power semiconductor modules for consumer and industrial equipment has been reduced by approximately 47% compared to conventional products.
Through the adoption of RC-IGBTs, Mitsubishi Electric has achieved a smaller module size, contributing to the compact design of inverter substrates. Additionally, the new interlock function for arm short-circuit protection simplifies its design. The insulation distance from the terminals to the heat sink is equivalent to that of conventional products, making replacement easy.
Furthermore, in response to the growing demand for heat pump air conditioning systems in regions with cold winters such as North America and Northern Europe, Mitsubishi Electric has developed a power semiconductor module that operates stably at low temperatures, achieving a continuous operating temperature lower limit of -40°C. This is boosting widespread adoption of inverter-equipped air conditioning systems in cooler regions and helping to achieve carbon neutrality.
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Mitsubishi Electric Corporation announced that it has signed a memorandum of understanding (MOU) with GE Vernova, Inc., headquartered in Cambridge, Massachusetts, USA, to strengthen their cooperation on power semiconductors for high-voltage direct-current (HVDC) transmission systems. The agreement is a result of the “Japan-US focus group to enhance collaboration on energy security and supply chain,” an initiative organized by Japan’s Ministry of Economy, Trade and Industry (METI) and GE Vernova to promote increased corporate collaboration between the two countries.
The deployment of power generation systems that utilize renewable energy sources such as wind and solar power has been expanding worldwide in support of global decarbonization. Accordingly, demand is increasing for HVDC transmission systems, which transmit large amounts of generated electricity over long distances more stably and efficiently than alternating current (AC) transmission systems. Voltage source converter (VSC) HVDC transmission systems are noteworthy for their capability to stabilize power grids for efficient, long-distance transmission of large volumes of electricity, even when combined with power generation systems that use inherently unstable renewable energy sources.
The global market for these systems is growing rapidly. Mitsubishi Electric holds the top global market share in power semiconductors for VSC HVDC transmission systems and is advancing the development of the insulated gate bipolar transistor (IGBT), which provides high reliability, high voltage resistance, and large current capacity.
Going forward, Mitsubishi Electric aims to further expand its HVDC transmission systems business by increasing production capacity to meet rapidly expanding market demand. With the signing of this memorandum, Mitsubishi Electric will provide a stable and continuous supply of IGBT power semiconductors for GE Vernova’s VSC HVDC transmission systems.
Through strengthened technical and strategic cooperation with GE Vernova, Mitsubishi Electric aims to leverage the expertise and strengths of both companies to support the evolution of the power grid and meet the growing demand for electricity.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation has announced its consolidated financial results for fiscal year 2025 (April 1, 2024 – March 31, 2025), reporting an overall strong performance despite global economic uncertainties.
Total revenue rose 5% year-over-year to 5,521.7 billion yen, with operating profit increasing by 19% to 391.8 billion yen. Among its business segments, the Semiconductor & Device division remained a key contributor to the company’s stability and future growth prospects.
Semiconductor & Device Business Highlights:
- Revenue: 259.9 billion yen, flat year-on-year
- Operating Profit: 40.6 billion yen, up 36% year-on-year
While the semiconductor business line faced headwinds in industrial applications, Mitsubishi Electric recorded solid growth in power modules for railway and power transmission applications, as well as optical communication devices, helping offset some sectoral declines.
The segment’s sharp improvement in profitability was driven by:
- Better product mix with stronger contributions from high-margin sectors.
- Strategic cost control measures and operational efficiency improvements.
- Benefits from favorable currency exchange rates.
This strong performance was achieved even as demand for industrial power modules softened, highlighting Mitsubishi Electric’s resilience in the face of market shifts.
Mitsubishi Electric projects further expansion of its semiconductor operations into critical growth areas, including:
- Railway electrification
- Power infrastructure upgrades
- High-speed data communication networks
The company continues to invest in its semiconductor technology, targeting new innovations to support energy efficiency, mobility, and communication infrastructure solutions.
For fiscal 2026, Mitsubishi Electric expects to maintain steady revenue across its Semiconductor & Device segment and aims to enhance profitability through continued technological advancements and market diversification.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation announced that it will begin shipping samples of two new SLIMDIP series power semiconductor modules for room air conditioners and other home appliances, the Full SiC (silicon carbide) SLIMDIP (PSF15SG1G6) and the Hybrid SiC SLIMDIP (PSH15SG1G6), on April 22.
Both modules, the first SiC versions in the company’s SLIMDIP series of compact, terminal-optimized modules, achieve excellent output and power loss reduction for energy savings in small- to large-capacity appliances. They will be exhibited at Power Conversion Intelligent Motion (PCIM) Expo & Conference 2025 in Nuremberg, Germany from May 6 to 8, as well as trade shows in Japan, China and other countries.
Mitsubishi Electric’s newly developed silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) chip is incorporated into both new SLIMDIP packages. Compared to current silicon (Si)-based reverse-conducting insulated-gate bipolar transistor (RC-IGBT) SLIMDIP modules, these new SiC modules achieve higher output for larger-capacity appliances. Additionally, compared to the Si-based module, power loss is reduced by 79% with the Full SiC SLIMDIP and by 47% with the Hybrid SiC SLIMDIP for more energy-efficient appliances.
With these two new modules as well as existing Si-based RC-IGBT SLIMDIP modules, the SLIMDIP series now offers three options for use in inverter boards of appliances such as room air conditioners, each one suited to specific electrical capacity and performance needs, but all offered in the same package to help reduce the burden of designing inverter substrates.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation will begin shipping samples of its new XB Series high-voltage insulated-gate bipolar transistor (HVIGBT) module, a 3.3k-volt, 1500A high-capacity power semiconductor for large industrial equipment such as railway vehicles, on May 1.
By adopting proprietary diode and insulated gate bipolar transistor (IGBT) elements, as well as a unique chip termination structure, the module’s improved moisture resistance will help to improve the efficiency and reliability of inverters for large industrial equipment operating in diverse environments. Mitsubishi Electric will exhibit the XB Series HVIGBT module at Power Conversion Intelligent Motion (PCIM) Expo & Conference 2025 in Nuremberg, Germany from May 6 to 8.
The new 3.3kV/1500A XB Series HVIGBT module uses IGBT elements incorporating Mitsubishi Electric’s proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT) structure. In particular, the module reduces total switching loss by approximately 15% compared to previous models, contributing to higher efficiency in inverters. It also expands tolerance in the reverse-recovery safe-operating area (RRSOA) by about 25% compared to previous models, further enhancing inverter reliability.
In addition, by using a new electric field relaxation structure and a surface charge control structure in the chip’s termination area, Mitsubishi Electric has reduced the area’s size by about 30% while achieving about 20 times greater moisture resistance than existing products, contributing to more stable operation of inverters used in high-humidity environments. By further improving the efficiency and reliability of inverters for large industrial equipment operating in various environments, the module is expected to contribute to efforts to achieve carbon neutrality.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation released its consolidated financial results for the third quarter and the first nine months of fiscal year 2025, ending December 31, 2024. The company reported a revenue of ¥4,000.4 billion, marking a 5.8% increase from the same period in the previous fiscal year. This growth is attributed to strong performances in the Infrastructure and Industry & Mobility segments.
The cost of sales was ¥2,771.0 billion, resulting in a gross profit of ¥1,229.3 billion. Selling, general, and administrative expenses totaled ¥951.4 billion. The company also reported other profits amounting to ¥25.7 billion, leading to an operating profit of ¥303.6 billion, a significant 36.5% increase year-over-year.
Financial income stood at ¥16.9 billion, while financial expenses were ¥5.4 billion. The share of profit from investments accounted for using the equity method was ¥29.6 billion. Consequently, profit before income taxes reached ¥344.6 billion. After accounting for income taxes of ¥76.8 billion, the net profit was ¥267.8 billion, a 36.4% increase from the previous year. Net profit attributable to Mitsubishi Electric Corporation stockholders was ¥248.1 billion, with ¥19.7 billion attributable to non-controlling interests.
In terms of comprehensive income, the company reported ¥340.8 billion, up from ¥315.6 billion in the previous year. This includes other comprehensive income of ¥73.0 billion, primarily due to exchange differences on translating foreign operations and changes in the fair value of financial assets.
As of December 31, 2024, total assets were ¥6,234.8 billion, an increase of ¥67.5 billion from March 31, 2024. Current assets were ¥3,636.7 billion, with cash and cash equivalents totaling ¥734.0 billion. Non-current assets amounted to ¥2,598.2 billion.
Total liabilities decreased by ¥93.2 billion to ¥1,745.9 billion. Current liabilities were ¥1,745.9 billion, including trade payables of ¥574.6 billion and contract liabilities of ¥325.8 billion. Non-current liabilities stood at ¥1,745.9 billion. Equity attributable to Mitsubishi Electric Corporation stockholders increased by ¥161.0 billion to ¥4,161.0 billion, while non-controlling interests rose by ¥0.3 billion to ¥327.9 billion.
These results reflect Mitsubishi Electric’s robust performance across its business segments and its strategic focus on growth and profitability.
The Energy and Electric Systems segment experienced a revenue increase due to strong demand for power generation and distribution systems, particularly in renewable energy sectors. The Industrial Automation Systems segment also saw growth, driven by increased capital investments in factory automation and robust sales in the automotive sector. Conversely, the Information and Communication Systems segment faced a decline in revenue, attributed to decreased demand for communication systems.
In its consolidated financial results Mitsubishi Electric reported notable performance in its Semiconductor & Device segment. This segment encompasses the company’s semiconductor operations, including power devices and other electronic components.
Third Quarter Semiconductor & Device Performance:
- Revenue: The Semiconductor & Device segment achieved a revenue of ¥67.8 billion in Q3 FY25, reflecting a slight decrease of ¥1.9 billion compared to the same period in the previous fiscal year.
- Operating Profit: The segment reported an operating profit of ¥8.4 billion, marking an increase of ¥0.5 billion year-over-year. The operating profit margin improved to 12.5%, up from 11.3% in Q3 FY24.
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