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MCC Semi is unleashing the ultimate component for high-power switching — 100V N-Channel MOSFET, MCP2D6N10Y. Leveraging advanced split-gate-trench (SGT) technology and low on-resistance of 2.6mΩ, this MOSFET is made to slash conduction losses while enhancing thermal efficiency.
Demanding power electronics get an extra boost of efficiency from its ultra-low junction-to-case thermal resistance of 0.6K/W. The TO-220 package only enhances its performance thanks to its high surge capability.
An ideal combination of robust current handling, superior heat dissipation, and optimal efficiency ensures this N-channel MOSFET delivers unwavering operation in high-power applications ranging from battery management systems and motor drives to DC-DC converters.
Features & Benefits:
- High-performance 100V N-channel MOSFET
- Utilizes SGT technology
- Low on-resistance of 2.6mΩ
- Impressive junction-to-case thermal resistance of 0.6K/W
- Maximizes thermal efficiency and minimizes power losses
- Excellent thermal capabilities
- Robust current handling capacity
- Designed for TO-220 package with high surge capability
Original – Micro Commercial Components
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MCC introduced the latest additions to its robust portfolio: 10 1200V SiC N-channel MOSFETs in versatile TO-247-4, TO-247-4L, and TO-247AB packages. These new MOSFETs are available in 3-pin and 4-in (Kelvin source) configurations and meet the rising demand for high-power, high-voltage applications.
Boasting exceptional on-resistance values from 21mΩ to 120mΩ (typ.) and fast switching speeds, these components are the ones you can count on for reliable performance. Their excellent thermal properties and fast intrinsic body diode ensure smooth, efficient operation in the most challenging conditions, making them a must-have for critical power systems.
Features & Benefits:
- High-power capability: 1200V MOSFET with SiC technology
- Fast, reliable switching: Intrinsic body diode improves efficiency & ruggedness Enhanced performance: High switching speed with low gate charge
- Wide on-resistance selection: ranging from 21mΩ to 120mΩ (typ.)
- Efficiency: Superior thermal properties and low switching losses
- Durability: Avalanche ruggedness
- Versatility: TO247 3-pin and 4-pin package options
Original – Micro Commercial Components
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MCC Semi introduced new high-performance 40V N-channel MOSFETs. These components leverage split-gate trench (SGT) technology and full AEC-Q101 qualification in compact packages.
Both MCU2D8N04YHQ and MCB2D8N04YHQ also boast low on-resistance of only 2.8mΩ, ensuring efficient power management in a diverse range of automotive systems.
These versatile MOSFETs in high-demand DPAK and D2PAK packages ensure a seamless upgrade path with minimal changes for integration within existing designs. Adding to their unquestionable performance in harsh conditions, these components have a high operating junction temperature of up to 175°C.
Whether it’s a battery management system or electric water pump, these new MOSFETs are up for delivering the ultimate in reliability for challenging automotive applications.
Features & Benefits:
- Fully AEC-Q101 qualified
- Split-gate trench (SGT) technology
- Low RDS(on)
- High power density package
- High junction temperature up to 175℃
- Available in compact DPAK and D2PAK packages
Original – Micro Commercial Components
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MCC Semi expands its automotive MOSFET portfolio with the addition of four side-wettable flank components. Available in N-channel and P-channel options, these products deliver high power density in a compact DFN3333 package.
Full AEC-Q101 qualification is just one way these MOSFETs ensure quality and reliability. Side-wettable flanks enable more reliable soldering during PCB assembly and allow manufacturers to perform automated optical inspections (AOI) to reduce costs while maintaining quality assurance.
The P-channel MOSFETs MCGWF20P06YHE3 and MCGWF45P04HE3 leverage trench low-voltage (LV) technology and feature RDS(on) from 13mΩ to 26mΩ. And the N-channel solutions MCGWF60N04YHE3 and MCGWF60N06YHE3 utilize split-gate trench technology with RDS(on) from 3.9mΩ to 6mΩ.
No matter which side-wettable flank MOSFET you choose, you can take advantage of versatility and performance for a diverse array of automotive electronic systems.
Features & Benefits:
- AEC-Q101 qualified
- P-channel powered by trench low voltage (LV) technology
- N-channel powered by split-gate trench (SGT) technology
- Low RDS(on)
- Side-wettable flanks ensure soldering stability
- Automated optical inspection capability for cost-effective production
- Compact yet high power density DFN3333 package
Original – Micro Commercial Components
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MCC Semi unveiled the latest innovation tailored specifically for the demanding automotive industry. Powered by 100V, MCU62N10YHE3 is the N-channel MOSFET that packs superior performance and handling into a small DPAK package.
Precision and efficiency come standard in this power MOSFET solution that features split-gate trench technology and RDS(on) of only 11mΩ. Made to withstand harsh automotive environments, this AEC-Q101 qualified component can handle 62A current capability and operating junction temps up to 175⁰C.
The ultra-compact package and ideal handling make this new MOSFET an effective solution for more than just the automotive sector. Engineers can rely on its powerful capabilities for consumer, industrial, and renewable energy applications.
Features & Benefits:
- AEC-Q101 qualification drives confidence
- Split-gate trench (SGT) technology enhances performance
- RDS(on) of only 11mΩ boosts efficiency
- 62A current capability ensures performance
- Compact DPAK package saves space and money
- Junction temperature up to 175℃ for reliability in harsh conditions
Original – Micro Commercial Components
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Micro Commercial Components introduced the latest auto-grade N-channel power MOSFETs with up to 2.5mΩ on-resistance: MCACL220N06YHE3, MCACL2D5N06YL, MCACL280N04YHE3, and MCACL330N04YHE3.
Optimized for high current output, these powerful components boast RDS(on) as low as 0.8mΩ in a sleek, engineer-friendly DFN5060 package. You can enhance power management and ramp up efficiency with minimal losses and the confidence that come along with AEC-Q101 qualification and the MCC name.
With high power density, MCC’s new 40V and 60V MOSFETs are designed to handle harsh conditions and operating junction temps up to 175℃ with ease, making them ideal for diverse automotive and industrial applications — from battery management systems and electric power steering to lighting controls, water pumps, and solar power systems.
Features & Benefits:
- AEC-Q101 qualified for reliability
- Advanced split-gate trench (SGT) technology
- Excellent thermal performance & efficiency
- Low RDS(on) minimizes power losses
- High power density packagey
- High junction temperature up to 175℃
- Compact DFN5060 package saves space and material costs
Original – Micro Commercial Components
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Micro Commercial Components unveiled 1700V SiC MOSFET – SICW400N170A-BP. Designed to elevate power conversion in a range of applications, this MOSFET features ultra-low on-resistance of only 400mΩ and high blocking voltage capability. SICW400N170A-BP SiC MOSFET enables high-speed switching while ensuring minimal conduction losses — essential requirements for optimizing frequency-dependent systems.
A standard, yet durable TO-247AB package delivers effective operation at a gate-source voltage of 20V with superior thermal stability and an operating junction temperature of +175°C.
This unwavering reliability in harsh conditions only adds to the component’s appeal and versatility for various high-voltage applications, including EV charging stations and renewable energy systems.
Features & Benefits:
- High blocking voltage capability (1700V)
- Ultra-low on-resistance (400mΩ) enhances efficiency
- Low capacitance enables faster switching
- Excellent thermal stability
- High operating junction temperature (to +175°C)
- Standard TO-247AB package
Original – Micro Commercial Components
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Micro Commercial Components introduced its latest high-performance component — 1200V SiC N-channel MOSFET. With an impressively low on-resistance of just 28mΩ at a gate-source voltage of 18V, SICW028N120A4-BP is engineered to deliver in demanding high-power applications.
Housed in a TO-247-4 package, this MOSFET works well with the popular D2PAK 4-pin footprint and includes a Kelvin source pin for significant reduction in switching losses and a boost in energy efficiency.
A high operating junction temperature of up to +175°C and excellent thermal stability ensure this new SiC MOSFET will revolutionize power management in a diverse range of industrial and commercial devices that must perform in harsh conditions.
Features & Benefits:
- 1200V blocking voltage capability
- 28mΩ low on-resistance
- Kelvin source pin for enhanced switching
- Avalanche ruggedness for durability
- Excellent thermal stability
- High operating junction temperature range (+175°C)
- D2PAK-compatible 4-pin TO-247-4 package
Original – Micro Commercial Components
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Micro Commercial Components unveiled the latest components with advanced semiconductor technology — three super fast recovery rectifiers. With a low profile and 600V capacity, MURBF1660C, MURBF1660CT, and MURBF3060CT are game-changers that deliver superior power in a small design.
Housed in a sleek TO-263AC package, these advanced products boast a minimal height of only 1.7mm and are compatible with the in-demand D2PAK footprint. Available in single or dual common cathode configurations, these super fast recovery rectifiers feature low leakage and forward currents of 16A or 30A.
These rectifiers minimize losses and maximize efficiency, making them ideal for reliable power management in industrial, consumer, and telecommunications applications. No matter which super fast recovery rectifier you choose from this collection, you’ll utilize ultra-fast recovery and unquestionable performance.
Features & Benefits:
- Low forward voltage
- Low leakage current
- Reduced power losses and increased efficiency
- Low profile TO-263AC package
- 1.7mm typical height
- D2PAK footprint compatibility for maximum versatility
- 600V working voltage
- Forward currents of 16A and 30A per device
- Single or dual common cathode configuration options
Original – Micro Commercial Components
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Micro Commercial Components announced two-in-one IGBT module, MIF400R065C2TL-BP. Available in the C2 package, this new cutting-edge module combines dual IGBT devices and sets the standard for rugged performance. With 650V capability and an ultra-fast and soft recovery anti-parallel rectifier, this module delivers exceptional reliability in high-power applications.
MCC’s IGBT module is a no-brainer for motor controls, uninterruptible power supplies, welding equipment, and other power-intensive applications, thanks to its ability to withstand junction temperatures up to 175°C and a high short-circuit capability of 6us.
Designed with low VCE(sat), IGBT trench technology, and a 400A current rating, this component ensures low switching losses and low inductance while maximizing efficiency.
Features & Benefits:
- Low VCE(sat) with positive temperature coefficient
- Trench IGBT technology
- Low switching losses
- High short-circuit capability (6us)
- Ultra-fast and soft recovery anti-parallel forward diode (FWD)
- Low inductance
- Maximum junction temperature of 175°C
- C2 package
Original – Micro Commercial Components
