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Littelfuse, Inc. has named Mouser Electronics its 2025 Global High Service Distributor of the Year, recognizing the distributor’s outstanding performance in customer service, digital engagement, global accessibility, and support for customers across a broad range of end markets.
The annual award honors distribution partners that deliver exceptional value by helping engineers, designers, and procurement professionals efficiently access and implement Littelfuse technologies. Mouser was selected based on its strong global distribution capabilities, extensive product availability, digital commerce platform, and effective customer engagement initiatives.
According to Littelfuse, Mouser’s ability to provide rapid access to products worldwide, combined with strong marketing execution and customer-focused support, played a key role in earning this year’s recognition.
Deepak Nayar, Senior Vice President and General Manager of Computing, Consumer, and Diversified Industrials (CCDI) at Littelfuse, highlighted Mouser’s role in connecting customers with Littelfuse technologies and emphasized the importance of the distributor’s service quality, global reach, and digital capabilities. He noted that these strengths help engineers quickly identify, evaluate, and deploy Littelfuse solutions across a wide range of applications.
Mouser Electronics supports customers through a global distribution model that combines extensive inventory availability with a robust online platform. This enables engineers and buyers to efficiently source Littelfuse products for applications spanning industrial automation, automotive systems, consumer electronics, power management, circuit protection, sensing technologies, and emerging technology markets.
Kristin Schuetter, Senior Vice President of Products at Mouser Electronics, stated that the award reflects the strength of the long-standing partnership between the two companies and their shared commitment to providing customers with broad product availability, quality support, and reliable service. She also expressed appreciation for the recognition and emphasized the companies’ continued focus on supporting customer success.
Littelfuse evaluates candidates for the Global High Service Distributor of the Year award using a comprehensive set of performance criteria, including:
- Overall sales growth
- Focus product sales performance
- Expansion of the customer base served
- Effectiveness of customer engagement initiatives
- Creativity and impact of marketing campaigns
- Service quality and global accessibility
The recognition highlights the important role distributors play in the electronics supply chain by providing technical support, inventory availability, and streamlined procurement processes that help accelerate product development and deployment.
For Littelfuse, partnerships with distributors such as Mouser are critical to expanding the reach of its portfolio of circuit protection, power control, sensing, and semiconductor technologies across global industrial, automotive, electronics, and energy markets.
The award further reinforces Mouser Electronics’ position as a leading global distributor serving engineers and technology companies with rapid access to the latest electronic components and design resources worldwide.
Original – Littelfuse
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Littelfuse, Inc. has named Future Electronics as its 2025 Americas High Volume Distributor of the Year, marking the second consecutive year that the distributor has received the recognition. The award highlights Future Electronics’ continued performance and collaboration with Littelfuse across the Americas region.
The High Volume Distributor of the Year award recognizes distribution partners that achieve outstanding results in areas including revenue growth, demand creation, design-win activity, and engagement across multiple product categories. According to Littelfuse, Future Electronics distinguished itself through its ability to expand its customer base, accelerate adoption of Littelfuse technologies, and successfully execute go-to-market initiatives.
Deepak Nayar, Senior Vice President and General Manager of the Electronics Business Unit at Littelfuse, congratulated the Future Electronics team on receiving the award for a second consecutive year. He noted that the company’s focus on growth, strong customer engagement, and effective execution across multiple product lines has continued to generate significant results, adding that Littelfuse values the partnership and the momentum created through the collaboration.
Future Electronics has continued to strengthen customer engagement while providing engineering and procurement teams with access to Littelfuse’s expanding portfolio of circuit protection, power control, and sensing solutions.
Anthony Alberga, Corporate Vice President at Future Electronics, said the company is honored to receive the recognition for the second year in a row. He noted that the award reflects the strength of the long-standing partnership between the two companies, the trust placed in Future Electronics by Littelfuse, and their shared commitment to delivering innovative, reliable, and industry-leading solutions and programs to customers worldwide. He also emphasized the contributions of the teams at both organizations in supporting customers, driving growth, and executing strategic initiatives.
Littelfuse evaluates recipients of its High Volume Distributor of the Year award using a comprehensive set of performance criteria, including sales growth, expansion of design-win opportunities, product portfolio mix, and the effectiveness of collaborative marketing activities.
The latest recognition reinforces the ongoing relationship between Littelfuse and Future Electronics as both companies continue to work together to support customers and expand market opportunities across the region.
Original – Littelfuse
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Littelfuse has introduced the MMIX1T500N20X4, a 200V N-channel ultra-junction power MOSFET designed for high-current applications requiring low conduction losses and improved thermal performance.
Key Specifications:
- Blocking Voltage: 200 V
- Drain Current (ID): 480 A
- On-Resistance (RDS(on)): 1.99 mΩ
- Gate Charge (Qg): 535 nC
- Thermal Resistance (Rth(j-c)): 0.14 °C/W
- Isolation Voltage: 2500 VRMS
The device is housed in a ceramic-based, isolated SMPD-X package with topside cooling, which supports simplified thermal management and higher power density. Compared to other X4-Class MOSFETs, the MMIX1T500N20X4 offers significantly lower RDS(on) and higher current capability, allowing for consolidation of paralleled MOSFETs in system designs.
Target Applications:
- DC load switching
- Battery energy storage systems
- Industrial power supplies and process control
- Charging infrastructure
- Power electronics for drones and VTOL platforms
This MOSFET is suitable for systems requiring compact, high-efficiency, and high-reliability solutions in medium-voltage ranges.
Original – Littelfuse
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Littelfuse has announced the launch of the IX4352NEAU, an automotive-qualified low-side gate driver developed to meet the increasing performance demands of silicon carbide (SiC) MOSFET and IGBT control in electric vehicle (EV) powertrain and DC-DC converter applications.
The IX4352NEAU is the first AEC-Q100-qualified gate driver to feature an integrated and adjustable negative gate drive bias, eliminating the need for an external negative voltage rail or additional DC-DC converters typically used to prevent parasitic turn-on in high-speed power devices. This integration simplifies design, enhances switching performance, and lowers total system cost for automotive engineers.
“With the IX4352NEAU, our customers can design safer, more compact, and efficient power systems,” said June Zhang, Product Manager at Littelfuse. “This enables faster time to market and reduced system cost for advanced EV drivetrains and power conversion applications.”
The new device provides up to 9 A peak source and sink drive capability with separate pins for fine-tuned switching performance. It also integrates key protection features including DESAT detection, active soft shutdown, undervoltage lockout, thermal shutdown, and fault output for increased system reliability.
Designed to deliver consistent performance under demanding automotive conditions, the IX4352NEAU operates across a wide temperature range and maintains charge pump function during thermal shutdown. It is suitable for use in EV inverters, motor drives, and DC-DC converters, as well as in high-performance switching power supplies.
Compared to conventional low-side gate drivers, the IX4352NEAU offers higher power density, reduced component count, and improved switching behavior through its built-in charge pump regulator and adjustable negative bias. It represents a significant advancement for SiC- and IGBT-based automotive power systems, supporting the industry’s transition toward more efficient, reliable, and compact electrification solutions.
Original – Littelfuse
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Littelfuse, Inc. announced the release of the IX3407B, a single-channel, galvanically isolated gate driver designed to deliver high-speed switching performance and simplified system design in high-voltage power applications.
The IX3407B gate driver delivers up to 7 A peak source and sink output current through separate output pins and integrates Littelfuse’s proprietary 2.5 kV capacitive isolation technology for robust signal integrity and safety. It provides fast propagation delays, high Common Mode Transient Immunity (CMTI), and enhanced thermal stability, enabling efficient and reliable operation across a wide range of switching frequencies and temperatures.
“With the IX3407B, our customers can design safer, more compact, and more efficient power systems,” said June Zhang, Product Manager, Integrated Circuits Division at Littelfuse. “The IX3407B will help companies accelerate their time to market while reducing total system cost in the growing markets of solar inverters, motor drives, industrial automation, and high-efficiency UPS systems.”
The IX3407B addresses the challenge of interfacing low-voltage logic with high-voltage power devices by providing galvanic isolation between control and driver stages without the need for bulky optocouplers or transformer-based isolation. This integration reduces board space, component count, and system complexity—while offering greater design flexibility and long-term reliability.
Key Features and Benefits
- 7 A typical peak source/sink current with separate output pins for precise gate control
- 2.5 kVrms capacitive isolation ensures robust electrical separation and fast signal transmission
- TTL/CMOS logic compatibility (3.3 V thresholds) with input voltage tolerance up to VCC
- Active Shutdown (ASD) and Under Voltage Lockout (UVLO) safeguard against fault conditions
- High CMTI rating of 150 kV/µs supports high-noise industrial environments
- Wide output supply range (13 V to 35 V) for flexibility across Si / SiC MOSFETs and IGBTs
Target Applications
The IX3407B is ideal for a wide range of industrial and renewable energy applications, including:
- AC and brushless DC motor drives
- Solar inverters and energy storage systems
- High-voltage DC/DC converters
- LLC and totem-pole PFC power stages
- Induction heating systems, welders, and uninterruptible power supplies (UPS)
- Building and factory automation systems
By replacing traditional optocoupler-based solutions, the IX3407B delivers superior performance, smaller footprint, and lower system cost, making it a compelling choice for engineers designing the next generation of high-efficiency power systems.
Original – Littelfuse
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Littelfuse, Inc. announced the release of the IXD0579M high-speed gate driver IC. The IXD0579M simplifies board design, saves space, and offers a reliable, multiple-source alternative for driving N-channel MOSFETs or IGBTs in half-bridge configurations.
Designed to operate across a wide 6.5 V to 18 V supply range, the IXD0579M integrates a bootstrap diode and a series current limit resistor—components typically requiring discrete placement—into a single compact 3×3 mm² TDFN-10 package. This innovative integration reduces BOM count and cost while enabling easier PCB layout.
Key Product Features and Benefits
- High Drive Capability: 1.5 A source and 2.5 A sink output drive current
- Wide Supply Voltage Range: Operates from 6.5 V to 18 V with UVLO protection
- Integrated Bootstrap Circuitry: On-chip bootstrap diode and resistor simplify design
- Logic Level Compatibility: Interfaces directly with TTL and CMOS levels (down to 3.3 V)
- Cross-Conduction Protection: Prevents simultaneous high-side and low-side conduction
- Ultra-Low Standby Current: Less than 1 µA standby mode for energy efficiency
- Thermal Robustness: Operates from −40 °C to +125 °C
“With the IXD0579M, Littelfuse is offering a direct drop-in replacement for popular industry-standard gate driver ICs,” said June Zhang, Product Manager, Integrated Circuits Division at Littelfuse. “This gives customers greater flexibility to secure supply while simplifying their circuit design with an integrated solution.”
The IXD0579M is the first Littelfuse gate driver to feature both an integrated bootstrap diode and current limit resistor, expanding the company’s growing portfolio of power control solutions. As the eleventh high-side/low-side driver released by Littelfuse, it strengthens the company’s position in serving “multiple source” markets that demand performance and supply chain continuity.
Engineered for high-frequency switching, the IXD0579M is ideal for:
- Brushless DC (BLDC) motor drives
- Battery-powered hand tools
- DC-DC converters and power supplies
- General industrial and electrical equipment
It’s compact footprint and robust performance make it well-suited for space-constrained designs and high-efficiency power stages.
Original – Littelfuse
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Littelfuse, Inc. announced the release of the IXD2012NTR, a high-speed, high-side and low-side gate driver designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration. The IXD2012NTR is optimized for high-frequency power applications, delivering superior switching performance and enhanced design flexibility.
The IXD2012NTR operates over a wide 10 V to 20 V voltage range and supports a high side switch of up to 200 V in a bootstrap operation. Its logic inputs are compatible with standard TTL and CMOS levels down to 3.3 V, ensuring seamless integration with a wide range of control devices. With a 1.9 A source and 2.3 A sink output capability, the IXD2012NTR provides robust gate drive currents ideal for high-speed switching applications.
The device’s integrated cross-conduction protection logic prevents the high- and low-side outputs from turning on simultaneously, while simplifying circuit design through a high level of integration. Offered in a compact SOIC(N)-8 package and operational over a temperature range of −40 °C to +125 °C, the IXD2012NTR delivers reliable performance even in harsh environments.
Key Features and Benefits
- High-Speed Switching Performance: Drives two N-channel MOSFETs or IGBTs in a half-bridge configuration.
- Wide Operating Voltage Range: 10 V to 20 V for versatile power management applications.
- High Side Switching Capability: Operates up to 200 V in a bootstrap configuration.
- Compatibility and Flexibility: Logic inputs compatible with TTL and CMOS levels down to 3.3 V for easy interfacing with controllers.
- Output Current Drive Capability: 1.9 A source and 2.3 A sink output for robust gate drive currents.
- Enhanced Efficiency and Integration: Integrated cross-conduction protection reduces power loss and simplifies design.
- Industry-Standard Pinout: Ensures drop-in replacement capability for existing designs.
“The IXD2012NTR is a direct drop-in replacement to popular, industry-standard gate driver devices,” said June Zhang, Product Manager, Integrated Circuits Division of Littelfuse Semiconductor Business Unit. “This addition to our portfolio provides customers with a reliable, alternate source to meet demanding production schedules while delivering exceptional high-speed performance.”
Ideal for Diverse Markets and Applications
The IXD2012NTR enhances the Littelfuse portfolio of high- and low-side gate drivers by offering a new 200 V device. It supports various high-frequency applications, including:
- DC-DC converters
- AC-DC inverters
- Motor controllers
- Class-D power amplifiers
The IXD2012NTR is well-suited for use in several markets:
- General industrial and electrical equipment
- Appliances
- Building solutions
- Energy storage
- Solar energy
- Power tools
Original – Littelfuse
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Littelfuse, Inc. announced that David (“Dave”) Heinzmann, President and Chief Executive Officer, has informed the Board of Directors of his intention to retire as President and CEO. The Board has appointed Dr. Greg Henderson, a member of the Littelfuse Board of Directors, as President and Chief Executive Officer effective February 10, 2025. Mr. Heinzmann will remain on the Littelfuse Board through April 2025 and, to support a seamless transition, serve as an advisor to the Company through August 10, 2025.
Gordon Hunter, Littelfuse Chairman of the Board, commented, “On behalf of the Board of Directors, I want to thank Dave for his 40 years of distinguished leadership and substantial contributions across numerous roles. As CEO, Dave has been an exceptional leader and his passion for Littelfuse, our people, and our customers has been instrumental in guiding the Company’s growth, innovations, and industry impact.”
Regarding Greg Henderson’s appointment as President and CEO, Mr. Hunter added, “Greg brings a wealth of experience across our industry, end markets and technologies, as well as broad familiarity with Littelfuse through his service as a member of our Board of Directors. Greg has a strong track record of value creation as well as extensive technical skills and management experience, most recently leading Analog Devices’ Automotive & Energy, Communications, and Aerospace Group. Greg has been a thoughtful voice on our board, and I am confident he is well prepared to lead Littelfuse into its next chapter of growth and success.”
Mr. Heinzmann said, “It has been a privilege to lead Littelfuse for the past 8 years, and I want to thank our customers, associates, and shareholders for their ongoing support. I am proud of the team and culture we have built, and what we have accomplished executing our growth strategy over this time. I’m confident Greg will continue to build on this success, as he has the ideal skillset and experience to lead our company in our next stage of growth. I look forward to supporting him through this transition.”
“I am honored to lead this great company,” said Dr. Henderson. “Littelfuse has an extensive track record of product leadership and technology innovation, driving meaningful growth and success over its 98-year history. I am excited to help steward the next phase of the Littelfuse growth journey alongside our talented global teams. I look forward to building on the strong foundation that Dave and the leadership team have established as we enable the future needs of our diverse customer base across our broad end markets.”
With the CEO transition taking effect on February 10, 2025, the Company has made the decision to postpone the previously planned February 26, 2025, Investor Day to a later date.
About Greg Henderson
Dr. Greg Henderson, 56, has been a member of the Littelfuse Board of Directors since May 2023. From 2017 to 2024, Dr. Henderson served as the Senior Vice President of the Automotive & Energy, Communications, and Aerospace Group for Analog Devices, Inc. (NASDAQ: ADI), a semiconductor company specializing in data conversion, signal processing and power management technology.
Previously, he served as Vice President of the RF and Microwave Business for Analog Devices from 2014 to 2017, and as Vice President of the RF and Microwave Business for Hittite Microwave Corporation until its acquisition by Analog Devices in 2014. Before joining Hittite, Dr. Henderson held various positions of increasing technical and leadership responsibility at Harris Corporation, Tyco Electronics, TriQuint Semiconductor, and IBM (NYSE: IBM). Dr. Henderson holds a bachelor’s degree in electrical engineering from Texas Tech University and a Ph.D. in electrical engineering from the Georgia Institute of Technology.
Original – Littelfuse
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Littelfuse, Inc. announced the launch of its TPSMB Asymmetrical TVS Diode Series, the first-to-market asymmetrical transient voltage suppression (TVS) diode specifically designed for the protection of Silicon Carbide (SiC) MOSFET gate drivers in automotive applications.
This innovative product addresses the increasing demand for reliable overvoltage protection in next-generation electric vehicle (EV) systems, delivering a compact, single-component solution that replaces multiple Zener diodes or TVS components traditionally used for gate driver protection. View the video.
The TPSMB Asymmetrical TVS Diode Series provides superior protection for SiC MOSFET gate drivers, which are prone to overvoltage events due to faster switching speeds compared to traditional silicon-based MOSFETs or IGBTs. The unique asymmetrical design of the TPSMB Series supports SiC MOSFETs’ differing positive and negative gate driver voltage ratings, ensuring enhanced performance in a variety of demanding automotive power applications where SiC MOSFETs are used, including:
- Onboard chargers (OBCs)
- EV traction Inverters
- I/O interfaces
- Vcc buses
These applications demand high-performance overvoltage protection (OVP) for SiC MOSFET gate drivers to ensure optimal performance, longevity, and efficiency.
Charlie Cai, Director of Product Management, Protection Business, Littelfuse, emphasizes the value this product brings to automotive engineers: “The TPSMB Asymmetrical TVS Diode Series offers an innovative solution for SiC MOSFET gate driver protection, eliminating the need for multiple components and simplifying the design process for engineers. Its compact, reliable design ensures that critical automotive power systems are safeguarded against overvoltage events, supporting the continued advancement of electric vehicles and other high-performance applications.”
The TPSMB Asymmetrical Series Surface-Mount TVS Diode offers the following key features and benefits:
- A Single-Component SiC MOSFET Gate Driver Protection: Eliminates the need for multiple Zener or TVS diodes, streamlining design and reducing component count.
- Asymmetrical Gate Driver Voltage Protection: Designed to protect SiC MOSFET gate drivers, which require different negative and positive voltage ratings.
- Compact Design: Available in a DO-214AA (SMB J-Bend) package, the series is ideal for space-constrained automotive designs.
- Automotive-Grade Quality: AEC-Q101-qualified, ensuring the highest reliability for automotive applications.
- High Power Dissipation: 600W peak pulse power dissipation (10×1000μs waveform) offers robust protection against transient overvoltage events.
- Low Clamping Voltage: VC < 10 V @ 30 A (8/20 µs) for optimal negative gate drive protection.
- Wide Frequency Stability: Stable capacitance across a wide operating frequency range, up to 2 MHz, making it ideal for SiC MOSFET applications.
- Compatible with Leading SiC MOSFETs: Suited for use with Littelfuse and other market-leading automotive SiC MOSFETs.
Original – Littelfuse
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Littelfuse, Inc. announced the release of the IXTN400N20X4 and IXTN500N20X4 Ultra Junction X4-Class Power MOSFETs.
The new devices expand upon the current 200 V X4-Class Ultra Junction MOSFETs, featuring some of the lowest on-state resistances available. The high current ratings of these MOSFETs allow designers to replace multiple low-current rated devices connected in parallel, streamlining the design process and enhancing both reliability and power density in applications. Additionally, the screw-mounted terminals of the SOT-227B package enable rugged and stable mounting.
These new 200 V MOSFETs deliver the lowest on-state resistances, enhancing and complementing the existing Littelfuse X4-Class Ultra Junction family portfolio. Compared to the existing state-of-the-art X4-Class MOSFET solutions, these MOSFETs offer up to ~2x higher current ratings and RDS(on) values up to ~63% lower.
The new MOSFETs are ideal for a range of low-voltage power applications where minimizing on-state losses is essential, including:
- Battery Energy Storage Systems (BESS),
- Battery chargers,
- Battery formation,
- DC/battery load switch, and
- Power supplies.
“The new devices will allow designers to replace multiple low-current rated devices, connected in parallel, with a single device solution,” said Sachin Shridhar Paradkar, Global Product Marketing Engineer at Littelfuse. “This unique solution simplifies gate driver design, improves reliability, improves power density and PCB space utilization.”
The Ultra Junction X4-Class Power MOSFET offers the following key performance benefits:
- Low conduction losses
- Minimized parallel connection effort
- Simplified driver design with minimal driver losses
- Simplified thermal design
- Increased power density
A MOSFET with low on-state resistance (RDS(on)) is the ideal choice in applications where minimal on-state losses are crucial. It significantly reduces the power dissipation during operation, leading to lower conduction losses, higher efficiency, and less heat generation. This makes it perfect for power-sensitive applications such as power supplies, motor drivers, and battery-operated devices where maintaining high efficiency and thermal management is crucial.
Performance Specifications
Performance Specs IXTN500N20X4 IXTN400N20X4 Package Aluminum-nitride ceramic-based isolated SOT-227B On-state resistance RDS(on) = 1.99 mΩ @ Tvj = 25°C RDS(on) = 3 mΩ @ Tvj = 25°C High nominal current rating 500 A @ TC = 25°C 340 A @ TC = 25°C Gate charge Qg = 535 nC Qg = 348 nC Thermal resistance RthJC = 0.13 K/W RthJC = 0.18 K/W Original – Littelfuse
