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With the rapid growth of AI data centers, the increasing adoption of electric vehicles, and the ongoing trends in global digitalization and reindustrialization, global electricity demand is expected to surge. To address this challenge, Infineon Technologies AG is introducing the EasyPACK™ CoolGaN™ Transistor 650 V module, adding to its growing GaN power portfolio.
Based on the Easy Power Module platform, the module has been specifically developed for high-power applications such as data centers, renewable energy systems, and DC electric vehicle charging stations. It is designed to meet the growing demand for higher performance while providing maximum ease of use, helping customers accelerate their design processes, and shorten time-to-market.
“The CoolGaN-based EasyPACK power modules combine Infineon’s expertise in power semiconductors and power modules,” says Roland Ott, Senior Vice President and Head of the Green Energy Modules and Systems Business Unit at Infineon. “This combination offers customers a solution that meets the increasing demand for high-performance and energy-efficient technologies in applications such as data centers, renewable energy, and EV charging.”
The EasyPACK CoolGaN module integrates 650 V CoolGaN power semiconductors with low parasitic inductances, achieved through compact die packing – enabling fast and efficient switching. Delivering up to 70 kW per phase with just a single module, the design supports compact and scalable high-power systems. Furthermore, by combining Infineon’s .XT interconnect technology with CoolGaN options, the module enhances both performance and reliability.
The .XT technology is implemented on a high-performance substrate, significantly reducing thermal resistance, which in turn translates to higher system efficiency and lower cooling demands. This results in increased power density and excellent cycling robustness, even under demanding operating conditions. With support for a broad range of topologies and customization options, the EasyPACK CoolGaN module addresses diverse requirements in industrial and energy applications.
Infineon has sold well over 70 million EasyPACK modules with various chipsets for a wide range of industrial and automotive applications. With the introduction of the CoolGaN power semiconductors in this package, Infineon is now expanding the application range of GaN as its use creates more demand into very high kilowatt applications.
The EasyPACK series leverages Infineon’s PressFIT contact technology, which ensures highly reliable and durable electrical connections between the module and the PCB. By utilizing a cold-welding process, PressFIT delivers gas-tight, solder-free joints that guarantee long-term mechanical stability and electrical conductivity, even under demanding thermal and mechanical conditions. This advanced design reduces manufacturing time and eliminates potential solder-related defects, offering a robust solution for high-reliability applications. Additionally, with its compact design, EasyPACK modules occupy up to 30 percent less PCB surface area than other conventional discrete layouts, resulting in a very cost-effective solution.
The newest 650 V CoolGaN generation provides increased performance and figures of merit. Infineon’s benchmark data shows that CoolGaN Transistor 650 V G5 products provide up to 50 percent lower energy stored in the output capacitance (E oss), up to 60 percent improved drain-source charge (Q oss) and up to 60 percent lower gate charge (Q g). Combined, these features result in increased efficiencies in both hard- and soft-switching applications.
This leads to a significant reduction in power loss compared to traditional silicon technology, ranging from 20 to 60 percent depending on the specific use case. The CoolGaN Transistor 650 V G5 product family offers a wide range of R DS(on) package combinations. Ten R DS(on) classes are available in various SMD packages, such as ThinPAK 5×6, DFN 8×8, TOLL and TOLT. All products are manufactured on high-performance 8-inch production lines in Villach (Austria) and Kulim (Malaysia). Target applications range from consumer and industrial switched-mode power supply (SMPS) such as USB-C adapters and chargers, lighting, TV, data center, and telecom rectifiers to renewable energy and motor drives in home appliances.
Infineon will showcase the EasyPACK modules with CoolGaN at PCIM 2025 in Nuremberg at the Infineon booth in Hall 7, Booth 470. Further information is available here.
Original – Infineon Technologies
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Infineon Technologies AG is launching its new CoolSET™ System in Package (SiP), a compact, fully integrated system power controller for highly efficient power delivery of up to 60 W at universal input voltage range of 85 – 305 V AC. Housed in a small SMD package, the high-voltage MOSFET with low R DS(ON) eliminates the need for an external heat sink, reducing system size and complexity.
The CoolSET SiP supports zero-voltage switching (ZVS) flyback operation, which enables low switching losses and low EMI signature, while also enhancing system reliability and robustness. This makes it an ideal solution for applications such as major home appliances and AI servers. In addition, the controller makes it easier for developers to meet stringent energy standards, supporting future-proof power solutions for modern designs.
The CoolSET SiP integrates a 950 V startup-cell, an 800 V avalanche rugged CoolMOS™ P7 SJ MOSFET, a ZVS primary flyback controller, a secondary-side synchronous rectification (SR) controller, and reinforced isolated communication enabled by Infineon’s proprietary CT Link technology. This high level of integration supports the development of more sophisticated end products by significantly reducing the number of discrete components, lowering the bill of materials, and minimizing PCB space requirements. A comprehensive set of advanced protection features simplifies system integration and allows designers more flexibility to optimize their solutions and enhance the overall user experience.
Infineon’s CoolSET System in Package (SiP) product samples are available to order. Infineon will show a demo version at PCIM Europe 2025. Further information is available at https://www.infineon.com/cms/en/product/promopages/coolset-sip/
Original – Infineon Technologies
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Infineon Technologies AG provides its 600 V CoolMOS™ 8 high-voltage superjunction (SJ) MOSFET product family to LITEON, a leader in power management solutions, for superior efficiency and reliability in server applications. The 600 V CoolMOS 8 offers an all-in-one solution that improves LITEON’s new generation technology for existing and upcoming server application designs.
Infineon’s newest CoolMOS 8 at 600 V is leading the way in high-voltage superjunction MOSFET technology, setting the standard for both technology and price performance on a global scale. The technology increases the overall performance of systems, while also playing a crucial role in reducing carbon emissions in various applications, including chargers and adapters, solar and energy storage systems, EV charging infrastructure, and uninterruptible power supplies (UPS) for example.
The 600 V CoolMOS 8 SJ is designed to provide high efficiency and reliability, which aligns perfectly with LITEON’s and Infineon’s commitment to advancing performance and total-cost-of-ownership for server applications. Additionally, the .XT interconnect technology being a key feature of CoolMOS 8 makes the new generation a perfect fit for conventional and AI servers. The advanced interconnect technology offers industry leading thermal dissipation capabilities and improves electrical performance by reducing parasitic inductance and resistance. The CoolMOS 8 SJ MOSFETs have an 18 percent lower gate charge compared to previous MOSFET models and the quickest turn-off time in the market. Their thermal performance has been improved by 14 to 42 percent.
“Our CoolMOS 8 SJ MOSFETs achieve first-class power density and efficiency, which is essential for high-performance server applications,” said Richard Kuncic, Head of Power Systems at Infineon. “The all-in-one solution provided by the CoolMOS 8 product family simplifies our portfolio, making the selection process easier whilst reducing design-in efforts.”
“LITEON is excited to leverage Infineon’s CoolMOS 8 family in our next-generation server designs,” said John Chang, General Manager, Cloud Infrastructure Platform & Solution SBG, LITEON. “The superior efficiency and reliability of the 600 V CoolMOS 8 SJ underscores our commitment to delivering cutting-edge technology and energy-efficient solutions to our customers.”
The 600 V CoolMOS 8 SJ MOSFETs series is an “all in MOSFET” technology addressing industrial and consumer applications. Thanks to its integrated fast body diode, it enables usage of one MOSFET family across all main topologies in the targeted markets. It enables cost attractive Si-based solutions enhancing Infineon’s high-voltage wide band gap (WBG) offerings. The MOSFETs are available in SMD-QDPAK, TOLL and ThinTOLL-8×8 packages.
Samples of the 600 V CoolMOS 8 SJ MOSFETs are now available. More information is available at www.infineon.com/coolmos8. Learn more about the benefits of Infineon’s 600 V CoolMOS 8 SJ MOSFETs in the whitepaper here.
Original – Infineon Technologies
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Infineon Technologies AG launched its new CoolSiC™ MOSFET 750 V G2 technology, designed to deliver improved system efficiency and increased power density in automotive and industrial power conversion applications. The CoolSiC MOSFETs 750 V G2 technology offers a granular portfolio with typical R DS(on) values up to 60 mΩ at 25°C, making it suitable for a wide range of applications, including on-board chargers (OBCs), DC-DC converters, auxiliaries for electric vehicles (xEVs) as well as industrial applications in EV charging, solar inverter, energy storage systems, telecom and SMPS.
The ultra-low R DS(on) values 4 and 7 mΩ enable outstanding performance in static-switching applications, making the MOSFETs a perfect choice for applications such as eFuse, high-voltage battery disconnect switches, solid-state circuit breakers, and solid-state relays. The best-in-class lowest R DS(on) 4 mΩ is featured in Infineon’s innovative top-side cooled Q-DPAK package, which is designed to provide optimal thermal performance and reliability.
The technology also exhibits excellent R DS(on) x Q OSS and best-in-class R DS(on) x Q fr, contributing to reduced switching loss in both hard-switching and soft-switching topologies with superior efficiency in hard-switching user cases. With reduced gate charge, the technology allows for faster switching and reduces gate drive losses, making them more efficient in high-frequency applications.
Additionally, the CoolSiC MOSFETs 750 V G2 offer a combination of high threshold voltage V GS(th),typ of 4.5 V at 25°C and ultra-low Q GD/Q GS ratio, which reinforce robustness against parasitic turn-on (PTO). Furthermore, the technology allows for extended gate driving capabilities, supporting static gate voltages of up to -7 V and transient gate voltages of up to -11 V. This enhanced voltage tolerance provides engineers with greater design margins and best compatibility with other devices in the market.
The CoolSiC 750 V G2 delivers unparalleled switching performance, great ease-of-use and superior reliability with firm adherence to AEC Q101 standards for automotive-grade parts and JEDEC standard for industrial-grade parts. It enables a more efficient, compact and cost-effective designs to fulfill the ever‑growing market needs and underscores its commitment to reliability and longevity in safety-critical automotive applications.
Infineon’s CoolSiC MOSFET 750 V G2 Q-DPAK 4/7/16/25/60 mΩ samples are available to order. More information is available at www.infineon.com/coolsic-750v
Original – Infineon Technologies
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At PCIM Europe 2025 in Nuremberg, Infineon Technologies AG will showcase its latest semiconductor, software and tooling solutions that help to solve today’s green and digital transformation challenges. At booth #470 in hall 7, the company will present highlights from its extensive power device portfolio, covering all relevant power technologies spanning silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). Under the motto “Driving decarbonization and digitalization. Together”, Infineon will offer numerous demonstrations and presentations as well as the opportunity to talk to its experts.
Infineon’s PCIM 2025 demonstration highlights will include solutions in the following areas:
- Silicon and Wide Bandgap (WBG) at its best: At PCIM, Infineon will showcase its latest package and product developments across Si, SiC and GaN for applications such as AI data center power supplies, robotics, solar systems, and on-board chargers. Highlights include the new CoolSiC™ JFET technology, which offers outstanding levels of efficiency, system integration, and robustness for solid-state power distribution applications. Further solutions on display will include the CoolSET™ system in package, various innovative solutions in CoolGaN™ transistor technology and the proven CoolMOS™ 8 and OptiMOS™ 8 in silicon.
- Sustainable mobility, with zero-emission electromobility: Infineon’s power solutions accelerate the transition to e-mobility by enabling efficient traction inverters, on-board chargers, DC-DC converters and battery management systems. At PCIM, the company will showcase its AURIX™ Kit for xEV power conversion, a versatile platform for the development of digitally controlled DC-DC converters with different topologies and control methods. In addition, Infineon will present new WBG innovations for on-board chargers and DC-DC converters that offer enhanced performance and design flexibility.
- Green, intelligent buildings and smarter living: Residential energy systems such as photovoltaic panels and heat pumps, together with smart, energy-efficient electronic devices and EV chargers, are key to reducing the carbon footprint in the home. Semiconductors play a vital role in enhancing energy efficiency and enabling smart, connected buildings. At PCIM, Infineon will showcase SiC- and GaN-based technologies that offer high energy efficiency and reliability for energy generation and consumption. On display will be full system solutions for solar inverters, as well as demos for power optimization and heat pump boosting.
- Powering AI – from grid to core: The exponential data growth driven by digitalization and AI is increasing the energy demand of data centers. At PCIM, Infineon will show how its solutions, extending from the grid to the core, leverage Si, SiC, and GaN technologies to maximize the efficiency, power density and reliability of AI infrastructure. The portfolio includes top-of-rack switches, power supplies and battery backup units. A power system reliability modeling solution enables real-time health monitoring for data centers, helping to reduce outages and total cost of ownership.
Infineon will also contribute to the PCIM conference program and the various expo stages. An overview of all contributions by Infineon experts is available at www.infineon/pcim.
Visitors who are unable to attend the live show can register for Infineon’s digital event platform.
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The market for electric vehicles continues to gather pace with a strong volume growth of both battery electric vehicles (BEVs) and plug-in hybrid electric vehicles (PHEVs). The share of electric vehicles produced is expected to see double-digit growth by 2030 with a share of around 45 percent compared to 20 percent in 2024. Infineon Technologies AG is responding to the growing demand for high-voltage automotive IGBT chips by launching a new generation of products. Among these offerings are the EDT3 (Electric Drive Train, 3 rd generation) chips, designed for 400 V and 800 V systems, and the RC-IGBT chips, tailored specifically for 800 V systems. These devices enhance the performance of electric drivetrain systems, making them particularly suitable for automotive applications.
The EDT3 and RC-IGBT bare dies have been engineered to deliver high-quality and reliable performance, empowering customers to create custom power modules. The new generation EDT3 represents a significant advancement over the EDT2, achieving up to 20 percent lower total losses at high loads while maintaining efficiency at low loads. This achievement is due to optimizations that minimize chip losses and increase the maximum junction temperature, balancing high-load performance and low-load efficiency. As a result, electric vehicles using EDT3 chips achieve an extended range and reduce energy consumption, providing a more sustainable and cost-effective driving experience.
“Infineon, as a leading provider of IGBT technology, is committed to delivering outstanding performance and reliability”, says Robert Hermann, Vice President for Automotive High Voltage Chips and Discretes at Infineon Technologies. “Leveraging our steadfast dedication to innovation and decarbonization, our EDT3 solution enables our customers to attain ideal results in their applications.”
The EDT3 chipsets, which are available in 750 V and 1200 V classes, deliver high output current, making them well-suited for main inverter applications in a diverse range of electric vehicles, including battery electric vehicles, plug-in hybrid electric vehicles, and range-extended electric vehicles (REEVs). Their reduced chip size and optimized design facilitate the creation of smaller modules, consequently leading to lower overall system costs. Moreover, with a maximum virtual junction temperature of 185°C and a maximum collector-emitter voltage rating of up to 750 V and 1200 V, these devices are well-suited for high-performance applications, enabling automakers to design more efficient and reliable powertrains that can help extend driving range and reduce emissions.
“Infineon, as Leadrive’s primary IGBT chip supplier and partner, consistently provides us with innovative solutions that deliver system-level benefits,” said Dr. Ing. Jie Shen, Founder and General Manager of Leadrive. “The latest EDT3 chips have optimized losses and loss distribution, support higher operating temperatures, and offer multiple metallization options. These features not only reduce the silicon area per ampere, but also accelerate the adoption of advanced packaging technologies.”
The 1200 V RC-IGBT elevates performance by integrating IGBT and diode functions on a single die, delivering an even higher current density compared to separate IGBT and diode chipset solutions. This advancement translates into a system cost benefit, attributed to the increased current density, scalable chip size, and reduced assembly effort.
Infineon’s latest EDT3 IGBT chip technology is now integrated into the HybridPACK™ Drive G2 automotive power module, delivering enhanced performance and capabilities across the module portfolio. This module offers a power range of up to 250 kW within the 750 V and 1200 V classes, enhanced ease of use, and new features such as an integration option for next-generation phase current sensors and on-chip temperature sensing, contributing to system cost improvements.
All chip devices are offered with customized chip layouts, including on-chip temperature and current sensors. Additionally, metallization options for sintering, soldering and bonding are available on request.
The new EDT3 and RC-IGBT devices are already available for sampling. Further information is available at www.infineon.com/edt3
Original – Infineon Technologies
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Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN™ Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, thereby further increasing overall system efficiency. Additionally, the integrated solution simplifies the power stage design and reduces BOM cost.
In hard-switching applications, GaN-based topologies may incur higher power losses due to the larger effective body diode voltage (V SD) of GaN devices. This gets worse with long controller dead-times, resulting in lower efficiency than targeted. Until now, power design engineers often require an external Schottky diode in parallel with the GaN transistor or try to reduce dead-times via their controllers. All of which is extra effort, time and cost. The new CoolGaN Transistor G5 from Infineon significantly reduces these challenges by offering a GaN transistor with an integrated Schottky diode appropriate for use in server and telecom IBCs, DC-DC converters, synchronous rectifiers for USB-C battery chargers, high-power PSUs, and motor drives.
“As gallium nitride technology becomes increasingly widespread in power designs, Infineon recognizes the need for continuous improvement and enhancement to meet the evolving demands of customers”, says Antoine Jalabert, Vice President of Infineon’s Medium-Voltage GaN Product Line, “The CoolGaN Transistor G5 with Schottky diode exemplifies Infineon’s dedication to an accelerated innovation-to-customer approach to further push the boundaries of what is possible with wide-bandgap semiconductor materials.“
GaN transistor reverse conduction voltage (V RC) is dependent on the threshold voltage (V TH) and the OFF-state gate bias (V GS) due to the lack of body diode. Moreover, the V TH of a GaN transistor is typically higher than the turn-on voltage of a silicon diode leading to a disadvantage during the reverse conduction operation, also known as third quadrant. Hence, with this new CoolGaN Transistor, reverse conduction losses are lower, compatibility with a wider range of high-side gate drivers, and with deadtime relaxed, there is broader controller compatibility resulting in simpler design.
The first of several GaN transistors with integrated Schottky diode is the 100 V 1.5 mΩ transistor in 3 x 5 mm PQFN package.
Original – Infineon Technologies
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Infineon Technologies AG bolsters its global and regional market leadership positions in automotive semiconductors, including its very strong position in microcontrollers. According to the latest market research from TechInsights, Infineon achieved a market share of 13.5 percent in the global automotive semiconductor market in 2024.
In Europe, the company climbed to the top spot with a 14.1 percent market share, up from second in 2023. Infineon also strengthened its presence in North America to the second largest market participant with a 10.4 percent share, rising from last year’s number three position. The global market share in microcontrollers rose again, to 32.0 percent, increasing the lead over the second-placed competitor by 2.7 percentage points.
Furthermore, Infineon maintained its leading market positions in the largest market for automotive semiconductors, China, with a 13.9 percent market share as well as in South Korea with a 17.7 percent market share. In Japan, the company confirmed its strong second place with a share of 13.2 percent. In total, the global automotive semiconductor market accounted for US$ 68.4 billion in 2024 – a slight decline of 1.2 percent compared to US$ 69.2 billion in 2023.
“We are the global number one in automotive semiconductors for the fifth consecutive year and we are equally successful across the world. For the first time in our history, Infineon is among the top two automotive semiconductor companies in every region,” said Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon. “This global success is a token of our strong product portfolio, outstanding customer support and our dedication to the specific needs of our customers.”
Infineon’s semiconductors are essential in driving the digitalization and decarbonization of vehicles to make them clean, safe and smart. They serve all major automotive applications such as driver assistance and safety systems, powertrain and battery management as well as comfort and infotainment features. A key focus is to support the evolution of electrical/electronic (E/E) vehicle architectures towards more centralized zonal designs as the basis for software-defined vehicles. This requires state-of-the-art connectivity and data security, smart power distribution and real-time computing power.
“It is the fifth time in a row that the ‘TechInsights Automotive Semiconductor Vendor Market Share Ranking’ confirms the Infineon lead, with microcontrollers largely contributing to this success,” said Asif Anwar, Executive Director of Automotive End Market Research at TechInsights. “Semiconductors for advanced driver assistance systems, especially SoCs and memories, were among the best performing product categories. Infineon did exceptionally well in microcontrollers used in advanced driver assistance systems and many other applications. With an increase of 3.6 percentage points to a 32.0 percent market share, Infineon has held up well in the automotive microcontroller market, which decreased by 8.2 percent year-over-year.”
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Infineon Technologies AG is developing TRENCHSTOP™ 7 H7 IGBTs in the new DTO247 package, which has the size of two TO247 packages. With a nominal current rating of up to 350 A, they will be the most powerful discrete IGBTs on the market. The new devices are ideal for solar inverters, uninterruptible power supplies (UPS) and energy storage systems (ESS).
The DTO247 with a single high-current IGBT can replace multiple lower-current IGBTs in standard TO247 packages that are typically connected in parallel. This enables high power density and bridges the gap between TO247-based designs and module architectures. Moreover, the ability to mix and match DTO247-based and standard TO247-based architectures within the same system offers a high degree of flexibility and customization. Integrating DTO247 into the existing TO247 portfolio simplifies the development of cost-effective, scalable architectures.
This reduces design complexity, shortens development time and lowers parallelization effort while improving performance, reliability, and system cost-effectiveness. The portfolio will include H7 IGBTs in 1200 V and 750 V versions, with current ratings of 200 A, 250 A, 300 A, and 350 A. Designed for high-current applications, these devices feature 2-mm-wide leads for optimal conduction, along with 7 mm pin-to-pin clearance and 10 mm creepage distance for enhanced safety and reliability. Additionally, an integrated Kelvin emitter pin provides faster and more efficient switching performance.
Infineon intends to continuously expand its DTO247 portfolio, with plans to include CoolSiC™ MOSFETs in a half-bridge configuration. These devices target to be pin-to-pin compatible with similar products on the market.
First engineering samples of the 200 A and 350 A variants of the TRENCHSTOP™ 7 H7 IGBTs in the DTO247 package are available now. Volume production is scheduled for mid-2026.
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The 600 V CoolMOS™ 8 high-voltage superjunction (SJ) MOSFET product family from Infineon Technologies AG has allowed Enphase Energy, a global energy technology company and a leading supplier of microinverter-based solar and battery systems, to simplify its system design and reduce assembly costs. By using the 600 V CoolMOS 8 SJ, Enphase is able to significantly reduce MOSFET resistance (R DS(on)) for its solar inverter systems, leading to lower conduction losses, which improves overall device efficiency and boosts power density. In addition, the company achieved MOSFET related cost savings.
“We are thrilled to partner with Enphase and support their mission to deliver innovative solar energy solutions,” said Richard Kuncic, Senior Vice President and General Manager at Infineon. “Our 600 V CoolMOS 8 SJ MOSFETs are designed to provide superior efficiency, reliability, and cost savings, which aligns perfectly with Enphase’s and Infineon’s commitment to advancing the performance and affordability of renewable energy technologies, further driving decarbonization.”
“Collaborating with Infineon has allowed us to leverage their CoolMOS 8 SJ MOSFET technology to enhance the performance and cost-effectiveness of our microinverter systems,” said Aaron Gordon, Senior Vice President and General Manager of the Systems Business Unit at Enphase Energy. “This partnership underscores our dedication to innovation and excellence in the solar energy industry, and we are excited about the significant improvements in power density and cost savings that we are now able to offer our customers.”
Infineon’s latest CoolMOS 8 MOFETs at 600 V are leading the way in high-voltage superjunction MOSFET technology worldwide, setting the standard for both technology and price performance on a global scale. The technology increases overall system performance and further reinforces decarbonization in applications such as chargers and adapters, solar and energy storage systems, EV charging, and uninterruptible power supplies (UPS).
The CoolMOS 8 SJ MOSFETs have an 18 percent lower gate charge than the CFD7 and 33 percent lower than the P7 series. A reduced gate charge allows for less electric charge to be applied to the gate of a MOSFET to switch it from the off state (non-conducting) to the on state (conducting), enabling a more energy-efficient system performance.
Additionally, the CoolMOS 8 SJ MOSFETs have the quickest turn-off time in the market and their thermal performance has been improved by 14 to 42 percent compared to the previous generation. The 600 V CoolMOS 8 SJ technology is equipped with an integrated fast body diode and is available in SMD-QDPAK, TOLL, and Thin-TOLL 8×8 packages, making it suitable for a wide range of consumer and industrial applications.
Samples for the portfolio extension of 600 V CoolMOS 8 SJ MOSFETs and 650 V CoolMOS 8 SJ MOSFETs are available from early April on.
Original – Infineon Technologies
