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Micro Commercial Components (MCC) has introduced the MIP50R12E1AML-BP and MIP75R12E2ML-BP, expanding its portfolio of 1200 V IGBT modules for high-power industrial applications. Available in industry-standard E1A and E2 packages, the new modules are designed to improve efficiency, thermal performance, and reliability in demanding power conversion systems.
The MIP Series is offered in 50 A and 75 A current ratings and incorporates low collector-emitter saturation voltage (VCE(sat)), integrated ultra-fast soft-recovery freewheeling diodes, and low-inductance package construction to reduce switching losses, improve efficiency, and enhance overall system performance.
The modules feature short-circuit withstand capability of up to 8 μs and support a maximum junction temperature of 175°C, enabling reliable operation under harsh electrical and thermal conditions. An integrated NTC thermistor provides accurate temperature monitoring for improved thermal management and system protection.
According to MCC, the modules are intended for a wide range of industrial applications, including motor drives, uninterruptible power supplies (UPS), welding equipment, servo drives, industrial inverters, renewable energy converters, and industrial power supplies.
Key features include:
- 1200 V collector-emitter voltage (VCE)
- 50 A (MIP50R12E1AML-BP) and 75 A (MIP75R12E2ML-BP) current ratings
- Typical VCE(sat) of 2.05 V and 1.9 V
- Integrated ultra-fast soft-recovery anti-parallel freewheeling diodes
- Low switching losses for improved conversion efficiency
- 8 μs short-circuit withstand capability
- Low-inductance package design
- Integrated NTC thermistor for temperature monitoring
- Maximum junction temperature of 175°C
- Industry-standard E1A and E2 module packages
- RoHS compliant
Original – Micro Commercial Components
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Micro Commercial Components (MCC) has introduced the MIB30N65AT2Y-TP, a 650 V Trench Field-Stop (TFS) IGBT designed for high-efficiency industrial power conversion applications. The device combines low conduction losses, high current capability, and robust thermal performance in a compact D2-PAK package, targeting applications such as industrial power supplies, renewable energy systems, EV charging equipment, and uninterruptible power supplies (UPS).
The MIB30N65AT2Y-TP features a 650 V collector-emitter voltage rating and supports a continuous collector current of 30 A. Built using Trench Field-Stop technology, the IGBT delivers a typical collector-emitter saturation voltage (VCE(sat)) of 1.75 V, helping reduce conduction losses while improving overall power conversion efficiency.
The device also supports a pulse collector current of up to 120 A, providing robustness against transient overload and high inrush current conditions. Smooth switching characteristics make it suitable for soft-switching converter topologies, while a positive temperature coefficient simplifies parallel operation by promoting natural current sharing between devices.
Designed for demanding operating environments, the IGBT supports a maximum junction temperature of 175°C and is housed in a surface-mount D2-PAK package that provides efficient thermal dissipation while enabling automated PCB assembly.
The MIB30N65AT2Y-TP is intended for a variety of high-power applications, including:
- Industrial power supplies
- Renewable energy systems
- EV charging equipment
- Welding power converters
- Uninterruptible power supplies (UPS)
- High-current switching systems
Key specifications include:
- 650 V collector-emitter voltage rating
- 30 A continuous collector current
- 120 A pulse collector current
- Typical VCE(sat) of 1.75 V
- Trench Field-Stop (TFS) technology
- Smooth switching performance
- Positive temperature coefficient
- Maximum junction temperature of 175°C
- D2-PAK package
- RoHS compliance
Original – Micro Commercial Components
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Micro Commercial Components (MCC) has introduced a new family of trench field-stop IGBTs designed to support high-efficiency power conversion in industrial and energy applications.
The new devices are available with voltage ratings of 650 V and 1200 V and are engineered to deliver low switching losses, fast switching performance, and reliable operation under demanding electrical and thermal conditions. The IGBTs use an advanced trench and field-stop structure that improves efficiency while reducing conduction and switching losses in power conversion systems.
The devices offer high current capability with continuous current ratings of up to 40 A and pulsed current capability reaching 80 A depending on the model. A low collector-emitter saturation voltage of approximately 1.95 V helps reduce conduction losses and improve overall system efficiency.
The 1200 V variant integrates a fast and soft-recovery anti-parallel diode, enabling improved performance in both hard-switching and soft-switching converter topologies. A positive temperature coefficient supports better current sharing in parallel device configurations while improving thermal stability.
The IGBTs are rated for maximum junction temperatures up to 175 °C and are packaged in the TO-247AB power package, which provides robust mechanical strength and effective heat dissipation for high-power applications.
The initial devices in the series include the MIW40N65AH2Y and MIW40N120AH2Y models, targeting applications such as industrial motor drives, power supplies, and energy conversion systems requiring high efficiency and reliable high-temperature operation.
Original – Micro Commercial Components
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CISSOID announced the CMT-PLA1BL12300MA, a 1200 V / 300 A half-bridge IGBT power module that pairs advanced switching technology with a widely adopted industry-standard CPAK-EDC package. The new module targets reliable, cost-effective upgrades in industrial power conversion, offering drop-in compatibility, enhanced mechanical robustness and greater design flexibility.
Engineered for high-frequency, high-performance systems—including UPS, motor and motion control, and industrial power supplies—the module leverages Trench Gate Field Stop (TG-FS) IGBT technology to balance switching speed and conduction losses while maintaining excellent short-circuit behavior. A high-surge freewheeling diode supports transient and overload events, and market-leading thermal conductance helps move heat quickly to boost power density and extend lifetime margins.
Key benefits:
- High efficiency with low saturation voltage and optimized switching to minimize dissipation
- Robust performance with continuous current capability up to 450 A and extended temperature margins
- Seamless integration via the CPAK-EDC industry-standard package for drop-in upgrades
- Reduced EMI from a fast, soft-recovery integrated diode, simplifying system design
Key technical features:
- Configuration: 1200 V / 300 A half-bridge IGBT power module
- Continuous DC current: 450 A (@ Tj = 90 °C)
- Low VCE(sat): 1.56 V (@ IC = 300 A, Tj = 25 °C); 1.78 V (@ IC = 300 A, Tj = 150 °C)
- Switching losses: Eon = 34 mJ, Eoff = 34.5 mJ (@ Tj = 150 °C)
- Thermal resistance: RθJC = 0.065 °C/W (IGBT); 0.1 °C/W (diode)
With this addition, CISSOID broadens its catalog of standard modules, giving designers proven building blocks to accelerate innovation in electric drives and industrial power conversion.
Original – CISSOID
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Magnachip Semiconductor Corporation announced a new series of Insulated Gate Bipolar Transistors (IGBTs) for solar inverters and industrial Energy Storage Systems (ESS), reinforcing its position in high-efficiency power semiconductors.
The new generation 650 V and 1200 V discrete IGBTs are engineered for inverter and ESS platforms, delivering higher current capacity via a significantly reduced cell pitch versus the prior generation. An improved Reverse Bias Safe Operating Area (RBSOA) enhances stability under harsh high-voltage and high-current conditions. Devices are offered in standard TO-247 and high-capacity TO-247 Plus packages to give designers flexibility across a wide range of power levels.
Magnachip already supplies IGBTs to major solar inverter OEMs and is expanding its portfolio to span residential through industrial systems up to 150 kW, enabling customers to align device selection with operating environments.
The new IGBTs leverage Advanced Field Stop Trench technology and refined process design. A ~40% reduction in cell pitch significantly increases current capacity within the same die area, while RBSOA is enhanced by more than 30% for robust operation across demanding conditions.
Roadmap updates include a high-current series up to 650 V/150 A and new 750 V products in the first half of 2026. Magnachip also plans a TO-247-4Lead option with a Kelvin source pin to improve switching efficiency—broadening design choices for higher-capacity, higher-efficiency solar and ESS systems.
“This new generation IGBT series enhances efficiency and reliability through refined process technologies,” said Hyuk Woo, CTO of Magnachip. “Building on our market-proven technology and production capabilities, we will continue to expand our solution lineup to better address diverse customer needs.”
Original – Magnachip Semiconductor
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Micro Commercial Components (MCC) introduced the MIW30N65AT2Y and MIW40N65AT2Y, a new generation of 650 V Trench and Field Stop (TFS) IGBTs engineered to tackle efficiency, thermal, and reliability challenges in high-power conversion. Housed in the industry-standard TO-247AB package, these Gen2 discrete devices pair low switching loss with strong current handling to support compact, high-density power architectures.
Industrial systems often face performance limits from switching losses and thermal constraints. The MIW series leverages advanced trench low-loss technology to cut both switching and conduction losses while sustaining high-power operation. A maximum junction temperature of 175 °C, high ruggedness, and strong short-circuit capability help ensure stable performance under demanding electrical and thermal conditions.
Available in 30 A and 40 A ratings, the MIW30N65AT2Y and MIW40N65AT2Y give engineers flexible options for scalable designs. A positive temperature coefficient supports safe paralleling, making the series a practical choice for efficient, reliable, and robust industrial and power-supply applications.
Features & benefits:
- 650 V rating for high-voltage industrial power conversion
- Trench low-loss technology to reduce switching loss and raise efficiency
- High ruggedness with stable operation across wide temperature ranges
- Short-circuit capability up to 5 µs
- Tj(max) of 175 °C for demanding applications
- TO-247AB package (approx. 15.9 mm × 20.8 mm) for strong thermal dissipation and high power handling
- Positive temperature coefficient (VCE rises with temperature) enabling natural current sharing and easier parallel operation
Original – Micro Commercial Components
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Mitsubishi Electric Corporation, Institute of Science Tokyo, University of Tsukuba and Quemix Corporation announced a world-first explanation of how hydrogen creates free electrons in silicon through its interaction with specific crystal defects—an advance that can cut power losses in insulated gate bipolar transistors (IGBTs) and open pathways for future ultra-wide bandgap devices.
Using first-principles calculations alongside electrical, optical and ESR measurements, the team showed that when hydrogen binds near the I4 defect (an interstitial silicon pair), it shifts the defect’s electronic states to favor electron release; the electron associated with hydrogen moves to the defect, which then emits a free electron.
Mitsubishi Electric also reported technical demonstrations on 1,200 V-class devices showing total power-loss reductions of 10% in IGBTs and 20% in diodes versus its 7th-generation products—performance gains linked to the newly clarified hydrogen mechanism and complementary substrate thinning.
Beyond silicon, initial calculations suggest the approach could help control electron levels in ultra-wide bandgap materials such as diamond and AlN, which are notoriously difficult to dope, potentially benefiting power semiconductors, RF devices and quantum sensors.
The collaborators aim to extend this mechanism to next-generation materials to further improve device efficiency and support decarbonization goals.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation has announced the launch of new standard-isolation (6.0 kVrms) and high-isolation (10.2 kVrms) modules in its 4.5 kV / 1,200 A XB Series of high-voltage insulated-gate bipolar transistors (HVIGBTs), scheduled for market release on December 9, 2025.
These newly developed high-capacity power semiconductor modules are designed to deliver improved moisture resistance and operational reliability, supporting efficient inverter performance in large-scale industrial equipment such as railcars, even under challenging environmental conditions including outdoor use.
The advanced HVIGBT modules are equipped with IGBT elements featuring Mitsubishi Electric’s proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT) structure. Through the integration of new electric field relaxation and surface charge control mechanisms, the modules achieve a reduction of approximately 30% in chip termination region size. Moreover, the new devices deliver around 20 times greater moisture resistance compared to existing products, making them well-suited for high-humidity environments.
In terms of performance improvements, the modules offer approximately 5% lower total switching loss relative to earlier models and demonstrate about 2.5 times higher reverse-recovery safe-operating area (RRSOA) tolerance. These enhancements collectively contribute to increased efficiency, greater reliability, and extended inverter life cycles in demanding industrial applications.
Mitsubishi Electric plans to showcase the new HVIGBT modules at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21 to 23, 2026, with additional exhibitions planned across North America, Europe, China, India, and other global regions.
With these technological advancements, the company aims to support the broader adoption of environmentally responsible power solutions and contribute to global carbon neutrality goals.
Original – Mitsubishi Electric
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Magnachip Semiconductor Corporation has announced a strategic agreement with Hyundai Mobis Company Limited (Mobis) focused on the deployment and commercialization of high-performance Insulated Gate Bipolar Transistor (IGBT) technology. This collaboration supports Magnachip’s broader plan to expand its power semiconductor portfolio, with particular emphasis on high-growth automotive and industrial applications.
IGBTs are essential power devices used in high-voltage, high-current systems such as electric vehicle (EV) traction inverters. According to Omdia, the global IGBT market exceeded $11 billion in 2024 and is forecast to grow from $12.3 billion in 2025 to $16.9 billion by 2028, driven largely by demand from hybrid and battery electric vehicle platforms.
In the context of this accelerating market, Magnachip and Mobis have worked together since 2015 to co-develop IGBT solutions tailored for EV traction inverters. Under the collaboration, Mobis led structural design, while Magnachip contributed semiconductor process expertise. This long-term partnership has recently resulted in the development of new IGBT products that have successfully passed system-level evaluations and meet the stringent reliability and efficiency requirements of EV systems. Mobis plans to begin mass production of traction inverters using these jointly-developed IGBTs in 2026.
Magnachip also plans to leverage the co-developed IGBT design platform to drive its own product roadmap. The company expects to launch a new line of industrial-grade IGBTs in the first half of 2026 as part of its broader strategy to strengthen its position in the global power semiconductor market. The targeted end markets include industrial automation, AI infrastructure, and renewable energy systems.
“This strategic partnership marks an important step in advancing our IGBT capabilities,” said Camillo Martino, Chief Executive Officer of Magnachip. “The development of our new seventh-generation IGBT product family significantly enhances our portfolio and positions us to compete more effectively in high-performance, premium markets. Magnachip is actively targeting high-value opportunities in industrial, AI, and renewable energy applications, which we expect to represent a larger share of our product mix in the coming years.”
The company emphasized that expanding into the IGBT segment aligns with its transformation into a focused power semiconductor business and supports its long-term objective of capturing value in advanced, energy-efficient systems worldwide.
Original – Magnachip Semiconductor
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Micro Commercial Components (MCC) has introduced its new 1200V Trench Field Stop (TFS) IGBT series, designed to deliver high efficiency, durability, and flexibility for demanding power switching applications in both industrial and automotive sectors.
The new IGBT family is housed in the proven TO-247AB package and available in current ratings from 40A to 80A. These devices feature low conduction and switching losses, smooth high-speed transitions, and integrated soft-recovery anti-parallel diodes to ensure low electromagnetic interference and simplified filter design.
Automotive-grade versions of the TFS IGBTs are AEC-Q101 qualified and rated for a maximum junction temperature of 150°C, while industrial variants can operate up to 175°C for extended thermal performance and longer service life. The series is well suited for motor drives, uninterruptible power supplies (UPS), electric vehicle traction and auxiliary systems, and high-power converters that require both efficiency and rugged reliability.
The trench field-stop design provides several key advantages, including:
- Low forward voltage and reduced switching losses, improving overall efficiency and minimizing heat generation
- Integrated fast, soft-recovery diodes for lower EMI and simplified circuit design
- 1200V breakdown voltage with a positive temperature coefficient, ensuring stable current sharing and robust short-circuit protection
Key Features and Benefits
- TO-247AB package for standard compatibility and easy thermal management
- 1200V breakdown voltage for ample design margin
- Wide current range from 40A to 80A
- Fast and smooth switching performance for both hard- and soft-switching topologies
- Low conduction and switching losses for improved system efficiency
- Integrated soft-recovery anti-parallel diode
- Positive temperature coefficient for stable parallel operation
- Automotive-grade options qualified to AEC-Q101 (TJ max = 150°C)
- Industrial-grade variants rated up to TJ max = 175°C
- High short-circuit endurance and avalanche ruggedness
- Suitable for high-frequency operation with reduced EMI
MCC’s 1200V TFS IGBT series provides engineers with a reliable, efficient, and cost-effective solution for next-generation industrial drives, EV power systems, and high-performance power conversion designs.
Original – Micro Commercial Components
