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CISSOID announced the CMT-PLA1BL12300MA, a 1200 V / 300 A half-bridge IGBT power module that pairs advanced switching technology with a widely adopted industry-standard CPAK-EDC package. The new module targets reliable, cost-effective upgrades in industrial power conversion, offering drop-in compatibility, enhanced mechanical robustness and greater design flexibility.
Engineered for high-frequency, high-performance systems—including UPS, motor and motion control, and industrial power supplies—the module leverages Trench Gate Field Stop (TG-FS) IGBT technology to balance switching speed and conduction losses while maintaining excellent short-circuit behavior. A high-surge freewheeling diode supports transient and overload events, and market-leading thermal conductance helps move heat quickly to boost power density and extend lifetime margins.
Key benefits:
- High efficiency with low saturation voltage and optimized switching to minimize dissipation
- Robust performance with continuous current capability up to 450 A and extended temperature margins
- Seamless integration via the CPAK-EDC industry-standard package for drop-in upgrades
- Reduced EMI from a fast, soft-recovery integrated diode, simplifying system design
Key technical features:
- Configuration: 1200 V / 300 A half-bridge IGBT power module
- Continuous DC current: 450 A (@ Tj = 90 °C)
- Low VCE(sat): 1.56 V (@ IC = 300 A, Tj = 25 °C); 1.78 V (@ IC = 300 A, Tj = 150 °C)
- Switching losses: Eon = 34 mJ, Eoff = 34.5 mJ (@ Tj = 150 °C)
- Thermal resistance: RθJC = 0.065 °C/W (IGBT); 0.1 °C/W (diode)
With this addition, CISSOID broadens its catalog of standard modules, giving designers proven building blocks to accelerate innovation in electric drives and industrial power conversion.
Original – CISSOID
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Magnachip Semiconductor Corporation announced a new series of Insulated Gate Bipolar Transistors (IGBTs) for solar inverters and industrial Energy Storage Systems (ESS), reinforcing its position in high-efficiency power semiconductors.
The new generation 650 V and 1200 V discrete IGBTs are engineered for inverter and ESS platforms, delivering higher current capacity via a significantly reduced cell pitch versus the prior generation. An improved Reverse Bias Safe Operating Area (RBSOA) enhances stability under harsh high-voltage and high-current conditions. Devices are offered in standard TO-247 and high-capacity TO-247 Plus packages to give designers flexibility across a wide range of power levels.
Magnachip already supplies IGBTs to major solar inverter OEMs and is expanding its portfolio to span residential through industrial systems up to 150 kW, enabling customers to align device selection with operating environments.
The new IGBTs leverage Advanced Field Stop Trench technology and refined process design. A ~40% reduction in cell pitch significantly increases current capacity within the same die area, while RBSOA is enhanced by more than 30% for robust operation across demanding conditions.
Roadmap updates include a high-current series up to 650 V/150 A and new 750 V products in the first half of 2026. Magnachip also plans a TO-247-4Lead option with a Kelvin source pin to improve switching efficiency—broadening design choices for higher-capacity, higher-efficiency solar and ESS systems.
“This new generation IGBT series enhances efficiency and reliability through refined process technologies,” said Hyuk Woo, CTO of Magnachip. “Building on our market-proven technology and production capabilities, we will continue to expand our solution lineup to better address diverse customer needs.”
Original – Magnachip Semiconductor
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Micro Commercial Components (MCC) introduced the MIW30N65AT2Y and MIW40N65AT2Y, a new generation of 650 V Trench and Field Stop (TFS) IGBTs engineered to tackle efficiency, thermal, and reliability challenges in high-power conversion. Housed in the industry-standard TO-247AB package, these Gen2 discrete devices pair low switching loss with strong current handling to support compact, high-density power architectures.
Industrial systems often face performance limits from switching losses and thermal constraints. The MIW series leverages advanced trench low-loss technology to cut both switching and conduction losses while sustaining high-power operation. A maximum junction temperature of 175 °C, high ruggedness, and strong short-circuit capability help ensure stable performance under demanding electrical and thermal conditions.
Available in 30 A and 40 A ratings, the MIW30N65AT2Y and MIW40N65AT2Y give engineers flexible options for scalable designs. A positive temperature coefficient supports safe paralleling, making the series a practical choice for efficient, reliable, and robust industrial and power-supply applications.
Features & benefits:
- 650 V rating for high-voltage industrial power conversion
- Trench low-loss technology to reduce switching loss and raise efficiency
- High ruggedness with stable operation across wide temperature ranges
- Short-circuit capability up to 5 µs
- Tj(max) of 175 °C for demanding applications
- TO-247AB package (approx. 15.9 mm × 20.8 mm) for strong thermal dissipation and high power handling
- Positive temperature coefficient (VCE rises with temperature) enabling natural current sharing and easier parallel operation
Original – Micro Commercial Components
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Mitsubishi Electric Corporation, Institute of Science Tokyo, University of Tsukuba and Quemix Corporation announced a world-first explanation of how hydrogen creates free electrons in silicon through its interaction with specific crystal defects—an advance that can cut power losses in insulated gate bipolar transistors (IGBTs) and open pathways for future ultra-wide bandgap devices.
Using first-principles calculations alongside electrical, optical and ESR measurements, the team showed that when hydrogen binds near the I4 defect (an interstitial silicon pair), it shifts the defect’s electronic states to favor electron release; the electron associated with hydrogen moves to the defect, which then emits a free electron.
Mitsubishi Electric also reported technical demonstrations on 1,200 V-class devices showing total power-loss reductions of 10% in IGBTs and 20% in diodes versus its 7th-generation products—performance gains linked to the newly clarified hydrogen mechanism and complementary substrate thinning.
Beyond silicon, initial calculations suggest the approach could help control electron levels in ultra-wide bandgap materials such as diamond and AlN, which are notoriously difficult to dope, potentially benefiting power semiconductors, RF devices and quantum sensors.
The collaborators aim to extend this mechanism to next-generation materials to further improve device efficiency and support decarbonization goals.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation has announced the launch of new standard-isolation (6.0 kVrms) and high-isolation (10.2 kVrms) modules in its 4.5 kV / 1,200 A XB Series of high-voltage insulated-gate bipolar transistors (HVIGBTs), scheduled for market release on December 9, 2025.
These newly developed high-capacity power semiconductor modules are designed to deliver improved moisture resistance and operational reliability, supporting efficient inverter performance in large-scale industrial equipment such as railcars, even under challenging environmental conditions including outdoor use.
The advanced HVIGBT modules are equipped with IGBT elements featuring Mitsubishi Electric’s proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT) structure. Through the integration of new electric field relaxation and surface charge control mechanisms, the modules achieve a reduction of approximately 30% in chip termination region size. Moreover, the new devices deliver around 20 times greater moisture resistance compared to existing products, making them well-suited for high-humidity environments.
In terms of performance improvements, the modules offer approximately 5% lower total switching loss relative to earlier models and demonstrate about 2.5 times higher reverse-recovery safe-operating area (RRSOA) tolerance. These enhancements collectively contribute to increased efficiency, greater reliability, and extended inverter life cycles in demanding industrial applications.
Mitsubishi Electric plans to showcase the new HVIGBT modules at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21 to 23, 2026, with additional exhibitions planned across North America, Europe, China, India, and other global regions.
With these technological advancements, the company aims to support the broader adoption of environmentally responsible power solutions and contribute to global carbon neutrality goals.
Original – Mitsubishi Electric
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Magnachip Semiconductor Corporation has announced a strategic agreement with Hyundai Mobis Company Limited (Mobis) focused on the deployment and commercialization of high-performance Insulated Gate Bipolar Transistor (IGBT) technology. This collaboration supports Magnachip’s broader plan to expand its power semiconductor portfolio, with particular emphasis on high-growth automotive and industrial applications.
IGBTs are essential power devices used in high-voltage, high-current systems such as electric vehicle (EV) traction inverters. According to Omdia, the global IGBT market exceeded $11 billion in 2024 and is forecast to grow from $12.3 billion in 2025 to $16.9 billion by 2028, driven largely by demand from hybrid and battery electric vehicle platforms.
In the context of this accelerating market, Magnachip and Mobis have worked together since 2015 to co-develop IGBT solutions tailored for EV traction inverters. Under the collaboration, Mobis led structural design, while Magnachip contributed semiconductor process expertise. This long-term partnership has recently resulted in the development of new IGBT products that have successfully passed system-level evaluations and meet the stringent reliability and efficiency requirements of EV systems. Mobis plans to begin mass production of traction inverters using these jointly-developed IGBTs in 2026.
Magnachip also plans to leverage the co-developed IGBT design platform to drive its own product roadmap. The company expects to launch a new line of industrial-grade IGBTs in the first half of 2026 as part of its broader strategy to strengthen its position in the global power semiconductor market. The targeted end markets include industrial automation, AI infrastructure, and renewable energy systems.
“This strategic partnership marks an important step in advancing our IGBT capabilities,” said Camillo Martino, Chief Executive Officer of Magnachip. “The development of our new seventh-generation IGBT product family significantly enhances our portfolio and positions us to compete more effectively in high-performance, premium markets. Magnachip is actively targeting high-value opportunities in industrial, AI, and renewable energy applications, which we expect to represent a larger share of our product mix in the coming years.”
The company emphasized that expanding into the IGBT segment aligns with its transformation into a focused power semiconductor business and supports its long-term objective of capturing value in advanced, energy-efficient systems worldwide.
Original – Magnachip Semiconductor
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Micro Commercial Components (MCC) has introduced its new 1200V Trench Field Stop (TFS) IGBT series, designed to deliver high efficiency, durability, and flexibility for demanding power switching applications in both industrial and automotive sectors.
The new IGBT family is housed in the proven TO-247AB package and available in current ratings from 40A to 80A. These devices feature low conduction and switching losses, smooth high-speed transitions, and integrated soft-recovery anti-parallel diodes to ensure low electromagnetic interference and simplified filter design.
Automotive-grade versions of the TFS IGBTs are AEC-Q101 qualified and rated for a maximum junction temperature of 150°C, while industrial variants can operate up to 175°C for extended thermal performance and longer service life. The series is well suited for motor drives, uninterruptible power supplies (UPS), electric vehicle traction and auxiliary systems, and high-power converters that require both efficiency and rugged reliability.
The trench field-stop design provides several key advantages, including:
- Low forward voltage and reduced switching losses, improving overall efficiency and minimizing heat generation
- Integrated fast, soft-recovery diodes for lower EMI and simplified circuit design
- 1200V breakdown voltage with a positive temperature coefficient, ensuring stable current sharing and robust short-circuit protection
Key Features and Benefits
- TO-247AB package for standard compatibility and easy thermal management
- 1200V breakdown voltage for ample design margin
- Wide current range from 40A to 80A
- Fast and smooth switching performance for both hard- and soft-switching topologies
- Low conduction and switching losses for improved system efficiency
- Integrated soft-recovery anti-parallel diode
- Positive temperature coefficient for stable parallel operation
- Automotive-grade options qualified to AEC-Q101 (TJ max = 150°C)
- Industrial-grade variants rated up to TJ max = 175°C
- High short-circuit endurance and avalanche ruggedness
- Suitable for high-frequency operation with reduced EMI
MCC’s 1200V TFS IGBT series provides engineers with a reliable, efficient, and cost-effective solution for next-generation industrial drives, EV power systems, and high-performance power conversion designs.
Original – Micro Commercial Components
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CISSOID has announced the expansion of its standard product portfolio with the introduction of several new families of power modules. These additions are designed to meet the increasing need for robust, efficient, and flexible solutions across automotive, industrial, and energy applications. Covering a wide range of current and voltage ratings, the new modules give engineers greater freedom to tailor performance to their specific system requirements.
The expanded lineup includes both Silicon Carbide (SiC) and IGBT-based power modules offered in industry-standard packages. This approach ensures enhanced mechanical strength and drop-in compatibility, simplifying upgrades and reducing development time. By maintaining standard footprints, CISSOID enables designers to easily balance performance, cost, and mechanical integration, while ensuring long-term reliability and scalability.
The first release in the new portfolio is a 750 V, 820 A IGBT power module qualified to the AQG-324 automotive standard. This high-current solution demonstrates CISSOID’s commitment to combining quality and reliability with leading-edge performance, offering seamless integration into existing designs at a competitive cost.
“With this expansion, we’re giving system designers the freedom to select from a wider range of proven, robust power modules while ensuring drop-in compatibility with their existing designs,” said Pierre Delatte, Chief Technology Officer at CISSOID. “Our goal is to help customers accelerate their electrification projects by combining flexibility with the high reliability they expect from CISSOID.”
Key benefits of the new product families include an expanded range of SiC and IGBT power modules, multiple voltage and current options for system optimization, robust industry-standard packaging, and increased design flexibility.
With this launch, CISSOID continues to strengthen its portfolio of high-performance power semiconductor solutions that enable efficient, reliable, and cost-effective electrification across multiple sectors.
Original – CISSOID
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Infineon Technologies AG and Goldwind Science & Technology Co., Ltd. expand their collaboration, enabling a stable and reliable flow of electricity in wind power generation. Infineon will supply Goldwind with its XHP™ 2 1700 V IGBT5 power modules with .XT technology that will enhance energy efficiency in Goldwind’s grid-forming GW 155 – 4.5 MW wind turbines. Infineon’s power modules deliver high power density, reliability, and robustness, ensuring a long operational lifetime for wind energy systems. By optimizing energy efficiency, they help to reduce energy costs and enhance the profitability of Goldwind’s wind turbines.
Grid-forming wind turbines act as stabilizers within the energy grid. Unlike conventional turbines that passively follow the grid, the grid-forming technology allows wind farms to mimic the stabilizing properties of traditional rotating generators. By using power electronics, grid-forming wind turbines can generate a stable frequency and maintain grid voltage, even when the load in the power grid changes. The International Energy Agency estimates that renewables will account for almost half of global electricity generation by the end of the decade, with the share of wind and solar photovoltaics doubling to 30 percent. Grid-forming capabilities will therefore become essential to ensure a stable and reliable flow of electricity despite fluctuations in energy generation.
“The emergence of grid-forming wind turbines enables wind farms to evolve from simple power suppliers into stabilizing pillars of the energy grid.” said Ye Jiqiang, Vice President of the Wind Power Industry Group and General Manager of the Supply Chain Center at Goldwind. “We look forward to further deepening our long-term collaboration with Infineon, leveraging efficient and reliable cutting-edge technology to advance renewable energy systems.”
“Collaborating with Goldwind to support their grid-forming wind turbines underscores Infineon’s commitment to strengthening global energy systems and further advancing renewable energy integration,” said Dominik Bilo, Executive Vice President and Chief Sales Officer Industrial & Infrastructure at Infineon. “Together, Infineon and Goldwind are driving decarbonization by enhancing the reliability and efficiency of wind power generation.”
Infineon’s XHP 2 1700 V IGBT5 power modules use the .XT interconnection technology. This technology is characterized by improved wire bonding, reliable chip attachment, and high-reliability system-soldering, enabling power modules to support increased cycling loads at higher temperatures compared to standard joining technology. The power modules feature low stray inductance and a design well-suited for paralleling, simplifying development for customers and enabling greater flexibility for platform upgrades. They provide exceptional lifetime even under challenging operating conditions such as those in wind turbines. As a result, they minimize unplanned downtimes and maximize wind energy harvested. Today, Infineon products are used in every second newly installed wind turbine worldwide.
Infineon and Goldwind have been collaborating since 2007 to advance more compact, highly reliable, and grid-friendly wind power converters. Infineon has already supplied Goldwind with its fifth-generation PrimePACK™ IGBT modules. Thanks to their high power density and exceptional cycling performance, these solutions have enabled Goldwind’s 6 MW full-power wind turbine models to meet stringent global standards for reliability, energy efficiency, and safety, while reducing operational and maintenance costs.Original – Infineon Technologies
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Microchip Technology has introduced its latest family of DualPack 3 (DP3) power modules, developed to meet the increasing demand for compact, efficient, and simplified power solutions across industrial and energy applications. The new modules incorporate advanced IGBT7 technology and are available in six variants, rated at 1200V and 1700V, with current capacities ranging from 300A to 900A.
Engineered to deliver up to 15–20% lower power losses compared to previous-generation IGBT4 modules, the DP3 family supports reliable operation at elevated junction temperatures up to 175°C during overload conditions. These characteristics make the modules ideal for high-voltage switching in demanding environments such as industrial drives, renewable energy systems, traction applications, energy storage, and agricultural vehicles.
Designed in a phase-leg configuration, each DP3 module fits into a compact package measuring approximately 152 mm × 62 mm × 20 mm. This form factor allows a power density boost without the need to parallel multiple devices, reducing both system complexity and BOM costs. DP3 also serves as a second-source alternative to the widely used EconoDUAL™ format, enhancing flexibility and supply chain security for OEMs.
By integrating IGBT7 technology with optimized packaging, the DP3 modules improve switching protection, reduce conduction losses, and simplify design for motor drives and other power conversion systems. Microchip’s solution also helps designers address typical challenges such as dv/dt control, complex drive requirements, and limited overload capability in previous module generations.
DP3 modules can be integrated into broader system designs that include Microchip’s microcontrollers, microprocessors, connectivity, security, and power management devices—enabling faster time to market and more reliable solutions.
Microchip continues to expand its power portfolio with standard and custom solutions based on silicon and silicon carbide technologies, along with analog and digital control products. To learn more about the company’s power management offerings, visit Microchip’s official website.
Original – Microchip Technology
