Gate Driver Tag Archive

  • STMicroelectronics Unveiled a new Automotive Gate Driver

    STMicroelectronics Unveiled a new Automotive Gate Driver

    2 Min Read

    STMicroelectronics unveiled L99H92 automotive gate driver which provides an SPI port for programming and diagnostics, a charge pump, protective features, and two additional current-sense amplifiers for system monitoring.

    Containing two high-side and two low-side drivers, the L99H92 can control a single H-bridge powering one bidirectional DC motor or two half bridges for two unidirectional motors. Typical applications for the highly integrated and easily configurable driver include electric sunroof, window lift, powered trunk, sliding doors, and seat-belt pre-tensioners.

    The charge pump powers the high-side drivers to maintain correct operation as the vehicle battery voltage fluctuates, enabling the outputs to function with a supply as low as 5.41V. The charge-pump output is also available at an external pin to control a MOSFET for reverse-battery protection.

    The gate-driving current is programmed through the SPI port, allowing slew-rate control to minimize electromagnetic emissions and thermal dissipation. Programming the current saves up to four external discrete components per MOSFET, typically needed for slew-rate setting with conventional drivers. The maximum drive current of 170mA gives designers flexibility to use the driver with a wide variety of external MOSFETs, including high-power devices with large gate capacitance.

    With many features for system protection and diagnostics, the L99H92 is built for reliability and safety. There is overcurrent protection with a programmable threshold, detected by monitoring the MOSFET drain current. Also, cross-conduction protection with programmable dead time ensures safety and efficiency. Additional protection includes overtemperature early warning and shutdown, overvoltage and undervoltage protection on analog and digital power supply inputs, and open-load and output short-circuit detection in off-state diagnostic mode.

    A fail-safe input can turn off all MOSFETs instantaneously and a dedicated diagnostic pin provides immediate fault warning without waiting for periodic SPI transfers.

    Additionally, two current-sense amplifiers are integrated for system-status monitoring, helping minimize the bill of materials. Suitable for high-side, low-side, and inline sensing, the amplifiers have independently programmable gain, low offset, and low thermal drift. They can be independently disabled to reduce current consumption when unused.

    Original – STMicroelectronics

    Comments Off on STMicroelectronics Unveiled a new Automotive Gate Driver
  • Toshiba Starts Volume Shipments of SmartMCD™ Series of Gate Driver ICs with Embedded Microcontroller

    Toshiba Starts Volume Shipments of SmartMCD™ Series of Gate Driver ICs with Embedded Microcontroller

    2 Min Read

    Toshiba Electronic Devices & Storage Corporation has started volume shipments of the SmartMCD™ Series of gate driver ICs with embedded microcontroller (MCU). The first product, “TB9M003FG“, is suitable for sensorless control of three-phase brushless DC motors used in automotive applications, including water and oil pumps, fans and blowers.

    TB9M003FG combines a microcontroller (Arm® Cortex®-M0), flash memory, power control functions and communications interface functions into a gate driver that controls and drives N-ch power MOSFETs for three-phase brushless DC motor drives.

    This integration will reduce system sizes and component counts while realizing advanced and complex motor control for a wide variety of automotive motor applications. The new product also incorporates Toshiba’s proprietary vector engine, hardware for sensorless sinewave control, reducing the load on the microcontroller, and the size of the software.

    A reference design using TB9M003FG, “Motor Driving Circuit for Automotive Body Electronics Using SmartMCD™”, is now available on Toshiba’s website.

    The expanding market for electric vehicles (xEV) requires electrification, component integration, downsized electronic control unit (ECUs), and quieter motors. In response, the new product contributes to downsizing of ECUs by integrating a microcontroller into the gate driver, and to quieter motors by using vector control.

    Original – Toshiba

    Comments Off on Toshiba Starts Volume Shipments of SmartMCD™ Series of Gate Driver ICs with Embedded Microcontroller
  • Allegro MicroSystems Launches Second Product in its HV Power Portfolio

    Allegro MicroSystems Launches Second Product in its HV Power Portfolio

    2 Min Read

    Allegro MicroSystems, Inc. announced the launch of the second product in its High Voltage Power portfolio. Allegro’s AHV85111 isolated gate-driver IC adds critical safety features while simplifying the design of high-power energy conversion systems for e-Mobility and clean energy applications, including OBC/DCDC, solar inverter and datacenter power supply.

    “Allegro continues to build upon the technology from our acquisitions in order to expand our High Voltage Power portfolio aimed at  helping designers achieve their efficiency and power density needs in clean energy and e-Mobility systems,” said Vijay Mangtani, Vice President and General Manager for High Voltage Power at Allegro. “The bipolar-output of our latest device improves noise immunity and significantly simplifies high-frequency power-converter designs.”

    Building upon Allegro’s existing power-thru technology, the AHV85111 was designed to meet designer demands for a simple, streamlined and safe solution. The AHV85111 gate driver adds bipolar-output, a critical feature that significantly improves time to market by eliminating the need to design a complicated negative isolated DC power supply and removing unnecessary external components.

    Allegro’s newest power-thru solution also adds crucial safety features that were designed to protect against high operating temperatures in electric powertrain systems, as well as reactions to noisy environments that may be present in microinverters in solar applications, power supply in datacenter applications or on-board chargers for electric vehicles.

    The AHV85111 gate driver packs all the benefits of Allegro’s power-thru technology, including 10x lower common-mode capacitance, a 50% smaller footprint, 10x noise reduction and a 50% efficiency improvement compared to competitor offerings, while also providing overtemperature protection that further improves the robustness of system.

    Original – Allegro MicroSystems

    Comments Off on Allegro MicroSystems Launches Second Product in its HV Power Portfolio
  • Power Integrations Released a New Family of Plug-and-Play Gate Drivers for 62 mm SiC MOSFET and IGBT Modules

    Power Integrations Released a New Family of Plug-and-Play Gate Drivers for 62 mm SiC MOSFET and IGBT Modules

    2 Min Read

    Power Integrations announced a new family of plug-and-play gate drivers for 62 mm silicon-carbide (SiC) MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable operation.

    SCALE™-2 2SP0230T2x0 dual-channel gate drivers deploy short-circuit protection in less than two microseconds, protecting the compact SiC MOSFETs against damaging over-currents. The new drivers also include advanced active clamping (AAC) to protect the switches against over-voltage during turn-off, enabling higher DC link operating voltages.

    Thorsten Schmidt, product marketing manager at Power Integrations, commented: “The 2SP0230T2x0 gate drivers are flexible; the same hardware can be used to drive either SiC MOSFET or IGBT modules. This reduces both system design and sourcing challenges, and the plug-and-play approach speeds development.”

    Ideal for applications such as railway auxiliary converters, offboard EV chargers and STATic synchronous COMpensator (STATCOM) voltage regulators for the power grid, 2SP0230T2x0 gate drivers are based on Power Integrations’ proven SCALE-2 technology, resulting in higher levels of integration, smaller size, more functionality and enhanced system reliability.

    Power Integrations’ compact 134 x 62 mm 2SP0230T2x0 provides reinforced isolation at 1700 V, enabling use for up to 1700 V operation; this is 500 V higher than conventional drivers, which are typically limited to 1200 V.

    Original – Power Integrations

    Comments Off on Power Integrations Released a New Family of Plug-and-Play Gate Drivers for 62 mm SiC MOSFET and IGBT Modules
  • STMicroelectronics’ GaN Driver Integrates Galvanic Isolation for Superior Safety and Reliability

    STMicroelectronics’ GaN Driver Integrates Galvanic Isolation for Superior Safety and Reliability

    2 Min Read

    STMicroelectronics’ first galvanically isolated gate driver for gallium-nitride (GaN) transistors, the STGAP2GS, trims dimensions and bill-of-materials costs in applications that demand superior wide-bandgap efficiency with robust safety and electrical protection.

    The single-channel driver can be connected to a high-voltage rail up to 1200V, or 1700V with the STGAP2GSN narrow-body version, and provides gate-driving voltage up to 15V. Capable of sinking and sourcing up to 3A gate current to the connected GaN transistor, the driver ensures tightly controlled switching transitions up to high operating frequencies.

    With minimal propagation delay across the isolation barrier, at just 45ns, the STGAP2GS ensures fast dynamic response. In addition, dV/dt transient immunity of ±100V/ns over the full temperature range guards against unwanted transistor gate change. The STGAP2GS is available with separate sink and source pins for easy tuning of the gate-driving operation and performance.

    Saving the need for discrete components to provide optical isolation, the STGAP2GS driver eases the adoption of efficient and robust GaN technology in various consumer and industrial applications. These include power supplies in computer servers, factory-automation equipment, motor drivers, solar and wind power systems, home appliances, domestic fans, and wireless chargers.

    In addition to integrating galvanic isolation, the driver also features built-in system protection including thermal shutdown and under-voltage lockout (UVLO) optimized for GaN technology, to ensure reliability and ruggedness.

    Two demonstration boards, the EVSTGAP2GS and EVSTGAP2GSN, combine the standard STGAP2GS and narrow STGAP2GSN with ST’s SGT120R65AL 75mΩ, 650V enhancement-Mode GaN transistors to help users evaluate the drivers’ capabilities.

    The STGAP2GS in SO-8 widebody package, and the STGAP2GSN SO-8 narrow version, are available now, priced from $1.42 for orders of 1000 pieces.

    Please visit www.st.com/stgap2gs for more information.

    Original – STMicroelectronics

    Comments Off on STMicroelectronics’ GaN Driver Integrates Galvanic Isolation for Superior Safety and Reliability
  • Power Integrations Unveils New SCALE-iFlex LT NTC IGBT/SiC Module Gate Drivers with Temperature Readout

    2 Min Read

    Power Integrations, the leader in gate-driver technology for medium- and high-voltage inverter applications, introduced the SCALE-iFlex™ LT NTC family of IGBT/SiC module gate drivers. The new gate drivers target the popular new dual, 100 mm x 140 mm style of IGBT modules, such as the Mitsubishi LV100 and the Infineon XHP 2, as well as silicon carbide (SiC) variants thereof up to 2300 V blocking voltage. The SCALE-iFlex LT NTC drivers provide Negative Temperature Coefficient (NTC) data – an isolated temperature measurement of the power module – which enables accurate thermal management of converter systems. This is particularly important for systems with multiple modules arrayed in parallel, ensuring proper current sharing and dramatically enhancing overall system reliability.

    Thorsten Schmidt, product marketing manager at Power Integrations, commented: “Designers of renewable energy and rail systems using SCALE-iFlex drivers already benefit from increased system performance; the SCALE-iFlex approach handles paralleling so expertly that one module in five can be eliminated without loss of performance or current de-rating. Adding an isolated NTC output reduces hardware complexity – particularly cables and connectors – and contributes to system observability and overall performance.”

    Based on Power Integrations’ proven SCALE™-2 technology, SCALE-iFlex LT gate drivers improve current sharing accuracy and therefore increase the current carrying capability of multiple-paralleled modules by 20 percent, allowing users to significantly increase the semiconductor utilization of their converter stacks. This is possible because the localized control of each 2SMLT0220D MAG (Module Adapted Gate driver) unit ensures precise control and switching, enabling excellent current sharing. Advanced Active Clamping (AAC) is employed to deliver accurate overvoltage protection.

    To further increase space saving, up to four MAG-driven power modules can be parallel-connected from a single 2SILT1200T Isolated Master Control (IMC) unit, which can also be mounted on a power module due to its compact outline. The gate drivers are fully qualified to IEC 61000-4-x (EMI), IEC-60068-2-x (environmental) and IEC-60068-2-x (mechanical) specifications, and undergo complete type testing – low voltage, high voltage, thermal cycling – shortening designer development time by 12 to 18 months. A comprehensive set of protection features is included, and parts are optionally available with conformal coating.

    Original – Power Integrations

    Comments Off on Power Integrations Unveils New SCALE-iFlex LT NTC IGBT/SiC Module Gate Drivers with Temperature Readout
  • Texas Instruments Helps Maximize EV Driving Range with SiC Gate Driver

    Texas Instruments Helps Maximize EV Driving Range with SiC Gate Driver

    3 Min Read

    Texas Instruments (TI), a leader in high-voltage technology, debuted a highly integrated, functional safety-compliant, isolated gate driver that enables engineers to design more efficient traction inverters and maximize electric vehicle (EV) driving range. The new UCC5880-Q1 reinforced isolated gate driver offers features that enable EV powertrain engineers to increase power density and reduce system design complexity and cost while achieving their safety and performance goals.

    As EVs continue to grow in popularity, semiconductor innovations in traction inverter systems are helping overcome critical barriers to widespread adoption. Automakers can build safer, more efficient and more reliable silicon carbide (SiC)- and insulated-gate bipolar transistor (IGBT)-based traction inverters by designing with UCC5880-Q1, featuring real-time variable gate-drive strength, Serial Peripheral Interface (SPI), advanced SiC monitoring and protection, and diagnostics for functional safety.

    “Designers of high-voltage applications like traction inverters face a unique set of challenges to optimize system efficiency and reliability in a small space,” said Wenjia Liu, product line manager for high-power drivers at TI. “Not only does this new isolated gate driver help enable engineers to maximize driving range, but it also integrates safety features to reduce external components and design complexity. And it can be easily paired with other high-voltage power-conversion products such as our UCC14141-Q1 isolated bias supply module to improve power density and help engineers reach the highest levels of traction inverter performance.”

    The need for higher reliability and power performance for EVs is continuously growing, as efficiency gains have a direct impact on operating range improvement per charge. But achieving any increase in efficiency is difficult for designers, given that the majority of traction inverters already operate at 90% efficiency or higher.

    By varying the gate-drive strength in real time, in steps between 20 A and 5 A, designers can improve system efficiency with the UCC5880-Q1 gate driver as much as 2% by minimizing SiC switching power losses, resulting in up to 7 more miles of EV driving range per battery charge. For an EV user who charges their vehicle three times per week, that could mean more than 1,000 additional miles per year. To learn more, read the technical article, “How to Maximize SiC Traction Inverter Efficiency with Real-Time Variable Gate Drive Strength.”

    In addition, the UCC5880-Q1’s SPI programmability and integrated monitoring and protection features can reduce design complexity as well as external component costs. Engineers can further reduce components and quickly prototype a more efficient traction inverter system using the SiC EV Traction Inverter Reference Design. This customizable, tested design includes the UCC5880-Q1, a bias-supply power module, real-time control MCUs and high-precision sensing.

    Original – Texas Instruments

    Comments Off on Texas Instruments Helps Maximize EV Driving Range with SiC Gate Driver