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Navitas Semiconductor has filed a patent infringement lawsuit against Renesas Electronics in the U.S. District Court for the Eastern District of Texas, escalating intellectual-property competition within the rapidly growing GaN power semiconductor market.
The lawsuit alleges that major Renesas GaN product lines, including its SuperGaN power semiconductors, infringe four Navitas U.S. patents: Nos. 9,929,079; 11,545,838; 11,770,010; and 11,862,996. Navitas said the patents form part of its broader GaN intellectual-property portfolio developed through its internal research and engineering activities.
Navitas has built a global IP portfolio of more than 300 issued and pending patents spanning its wide-bandgap semiconductor technologies. The company argues that protecting this intellectual property is increasingly important as GaN adoption expands beyond consumer power adapters into higher-power applications.
The legal action comes as Navitas shifts its growth strategy toward AI infrastructure, including AI data-center power systems and the energy and grid infrastructure supporting them. The company said momentum in these higher-power markets contributed to its second-quarter 2026 performance and that it expects revenue growth to accelerate in the third quarter as it executes its Navitas 2.0 strategy.
Original – Navitas Semiconductor
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Power Integrations has announced a major extension of its PowiGaN gallium nitride technology to a 2200 V rating, which the company says exceeds the voltage capability of other commercially available GaN technologies. The development significantly expands the addressable voltage range for GaN and targets emerging high-voltage applications including AI data centers, electric vehicles, renewable energy, battery storage and HVDC infrastructure.
The 2200 V technology is particularly relevant as power architectures migrate toward higher DC bus voltages to improve efficiency and power density. Power Integrations highlighted next-generation AI data centers as a major opportunity, with industry roadmaps moving beyond today’s 800 VDC architectures toward potential 1500 V distribution systems. The additional voltage headroom provided by 2200 V GaN could enable designers to use GaN in applications where voltage requirements have historically favored silicon carbide.
Power Integrations is already extending GaN into these higher-voltage systems. Its 1700 V PowiGaN ICs are being designed into single-stage auxiliary power applications in data centers, while 1250 V devices provide an alternative to stacked lower-voltage switches in the main power path of 800 VDC architectures. The new 2200 V platform pushes this strategy further by providing sufficient voltage margin for future higher-voltage buses.
The development is strategically important for the competitive positioning of GaN versus SiC. GaN has traditionally delivered advantages in switching frequency and power density but has been constrained by lower commercially available voltage ratings. High-voltage applications have therefore remained an important stronghold for SiC. By extending GaN to 2200 V, Power Integrations is attempting to bring GaN’s high-frequency characteristics into applications previously considered beyond its practical voltage range.
The potential system-level impact could be significant. Higher-voltage GaN devices could reduce the need to series-connect multiple lower-voltage switches, simplifying power stages while reducing component count and potentially improving power density and reliability. Power Integrations specifically identifies solar inverters, HVDC systems, advanced industrial power conversion, EV systems and data center infrastructure as potential applications.
The announcement also highlights how AI infrastructure is accelerating technology competition between GaN and SiC. Yole Group analyst Roy Dagher noted that GaN’s historical voltage ceiling has limited its participation in the main power path of high-voltage data center architectures, leaving much of this opportunity to SiC. According to the figures cited in the announcement, Yole expects the power GaN device market to reach $3.5 billion by 2031.
Original – Power Integrations
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Efficient Power Conversion (EPC) will showcase its latest Gen7 gallium nitride (GaN) power technology at PCIM Asia 2026 in Shenzhen, highlighting new devices and reference designs for AI data centers, humanoid robots, drones, motor drives, and high-density DC-DC power conversion. The company will also present live technical sessions covering emerging GaN applications and future power architectures.
EPC’s seventh-generation eGaN® FETs are designed to deliver:
- Ultra-low on-resistance (RDS(on))
- Reduced switching losses
- High-frequency operation
- Improved thermal performance
- Higher power density
- Simplified system integration
The new devices target applications requiring compact, high-performance power conversion, particularly AI infrastructure and intelligent motion systems.
A key focus of EPC’s exhibition will be integrated GaN motor-drive ICs for robotics and electric propulsion.
Featured products include:
- EPC33110 three-phase integrated ePower Stage IC for humanoid robot joints and drone propulsion
- EPC23108/09 integrated ePower Stage ICs supporting up to 100 V and 35 A
- EPC23110/11 integrated ePower Stage ICs supporting up to 100 V and 20 A
The devices are now in mass production and are designed to accelerate deployment of intelligent motion control systems.
EPC will also present several new Gen7 discrete GaN transistors, including:
Device Voltage RDS(on) EPC2366 40 V 0.84 mΩ EPC2379 18 V 0.28 mΩ EPC2370 18 V 0.28 mΩ EPC2378 25 V 0.41 mΩ EPC2377 40 V 0.50 mΩ EPC2375 100 V 0.90 mΩ EPC2376 150 V 1.50 mΩ The devices target:
- AI power supplies
- High-density DC-DC converters
- Robotics
- Advanced motor drives
- High-current synchronous rectification
EPC will demonstrate GaN-based power conversion across the AI server power chain, including:
- EPC91123 – 6 kW isolated 800 V-to-12.5 V ISOP LLC converter
- EPC91134 – 11 kW isolated 400/800 V-to-50 V converter
- A new 800 V-to-6 V, 6 kW ISOP converter making its debut at the exhibition
The company will also showcase point-of-load (PoL) power architectures that efficiently convert 48 V and 12 V intermediate bus voltages to sub-1 V processor supply rails required by next-generation AI accelerators.
Visitors will see GaN-based reference designs powering:
- Humanoid robotic arms
- Drone propulsion systems
- Three-phase motor drives
- High-current inverter platforms
Featured reference designs include:
- EPC91122
- EPC91132
- EPC91121
- EPC91135
- EPC9186HCx
- EPC91128/29/30/31
These demonstrations highlight the advantages of GaN in applications requiring fast transient response, lightweight designs, and high power density.
During PCIM Asia 2026, EPC experts will present a series of technical sessions covering:
- The future evolution of GaN technology
- Scalable motor-control architectures for humanoid robots and drones
- New GaN products for high-density DC-DC converters
- Emerging AI power delivery architectures
Original – Efficient Power Conversion
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Efficient Power Conversion (EPC) will participate in Tech Taipei Power 2026, where the company will present its latest gallium nitride (GaN) power technologies for applications including AI data centers, industrial systems, automotive, robotics, and renewable energy. The event will bring together industry experts to discuss advances in power conversion technologies and next-generation power architectures.
A keynote presentation by Alex Lidow, CEO of EPC, will examine emerging trends in AI data center power systems and the technologies required to support rapidly increasing computing workloads.
The presentation will explore how eGaN® FETs and integrated GaN power solutions improve efficiency and performance across the power conversion chain, from high-voltage AC-DC conversion to point-of-load power delivery.
At the conference, EPC will demonstrate how GaN technology delivers advantages over conventional silicon-based power devices, including:
- Higher power conversion efficiency
- Increased power density
- Faster switching speeds
- Smaller power system designs
- Reduced energy losses
These benefits are becoming increasingly important as AI infrastructure demands higher power levels while maintaining energy efficiency.
EPC will highlight GaN solutions for a range of applications, including:
- AI data centers
- Industrial power supplies
- Robotics
- Electric mobility
- Renewable energy systems
- High-performance power conversion
The company will also showcase its latest reference designs and discuss application-specific power system requirements with engineers and system designers attending the event.
Original – Efficient Power Conversion
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Infineon Technologies announced that the U.S. International Trade Commission’s (ITC) Final Determination, issued on May 7, 2026, has become final following the expiration of the Presidential Review Period. The decision confirms that Innoscience infringed an Infineon gallium nitride (GaN) patent and upholds the associated exclusion and cease-and-desist orders, resulting in import and sales restrictions on the infringing products in the United States.
With the conclusion of the Presidential Review Period, the ITC’s ruling is now fully enforceable. The decision confirms infringement of an Infineon GaN patent by Innoscience and prohibits the importation and sale of the affected products in the U.S. market.
Infineon stated that the outcome reinforces the strength of its intellectual property portfolio and its commitment to protecting innovation and promoting fair competition in the GaN semiconductor industry.
The U.S. ruling follows a series of legal victories for Infineon in Germany involving its GaN patent portfolio.
These German decisions prohibit the import, sale, and marketing of specified patent-infringing Innoscience products in Germany while also awarding damages to Infineon.
Infineon emphasized the growing importance of gallium nitride technology across next-generation power electronics applications, including:
- AI data center power infrastructure
- Renewable energy systems
- Industrial automation
- Electric vehicles
GaN devices offer higher switching speeds, greater power density, lower switching losses, and more compact system designs than conventional silicon technologies, enabling improved energy efficiency and reduced thermal management requirements.
The company also noted that its GaN intellectual property portfolio comprises approximately 450 patent families, supported by its 300 mm GaN manufacturing platform, which it views as a key differentiator for scaling next-generation power semiconductor production.
Original – Infineon Technologies
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The District Court of Munich I (Landgericht München I) has issued another ruling in favor of Infineon Technologies in its ongoing patent litigation concerning gallium nitride (GaN) technology against Chinese semiconductor company Innoscience.
The court concluded that certain Innoscience GaN products infringe Infineon’s patented technologies and ordered the company to cease importing, selling, and marketing the infringing products in Germany. In addition to the injunction, the court awarded damages to Infineon.
The latest decision represents another milestone in Infineon’s broader intellectual property enforcement efforts surrounding its gallium nitride technology portfolio.
According to Infineon, the ruling follows several earlier legal decisions in Germany and the United States that have also found infringement of Infineon intellectual property by Innoscience products. These include previous judgments issued by German courts on August 1, 2025, and June 18, 2026.
In the United States, the Full Commission of the U.S. International Trade Commission (ITC) ruled on May 7 that Innoscience had infringed one of Infineon’s patents relating to gallium nitride technology. Additional patent infringement proceedings involving other Infineon patents remain ongoing in U.S. courts.
Gallium nitride has become a key enabling technology for modern power electronics due to its ability to deliver higher switching frequencies, lower switching losses, improved efficiency, and greater power density compared with conventional silicon-based devices.
These performance advantages have driven increasing adoption of GaN semiconductors across numerous applications, including:
- Renewable energy systems
- AI and cloud data center power supplies
- Industrial automation equipment
- Electric vehicles
- Telecommunications infrastructure
- High-efficiency power conversion systems
As the commercial importance of GaN continues to grow, protection of intellectual property has become an increasingly significant competitive factor within the semiconductor industry.
Infineon stated that it continues to strengthen its position as a leading integrated device manufacturer (IDM) in the gallium nitride market through sustained investment in research and development.
The company reports that its intellectual property portfolio now comprises approximately 450 GaN patent families, making it one of the industry’s largest collections of gallium nitride-related patents.
Infineon indicated that it remains committed to protecting its intellectual property rights while continuing to advance semiconductor technologies that support major global trends including decarbonization, digital transformation, renewable energy, artificial intelligence, and electrification.
Original – Infineon Technologies
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Innoscience has introduced two new all-GaN AC-DC reference designs that leverage the company’s third-generation gallium nitride (GaN) technology to deliver high efficiency, high power density, and compact form factors across applications ranging from consumer fast chargers to industrial power supplies. The new 140 W and 1 kW platforms are designed to accelerate customer development of next-generation power systems for laptops, robotics, e-mobility, telecommunications, and industrial equipment.
As applications including AI-enabled consumer devices, robotics, electric two-wheelers, gaming systems, and industrial automation continue to demand higher power in smaller form factors, designers are increasingly turning to GaN-based power conversion to improve efficiency while reducing system size.
By utilizing GaN throughout the primary power stage, the new reference designs minimize switching losses, enable higher switching frequencies, and reduce passive component size compared with conventional silicon-based implementations.
The INNDAD140C1 targets USB PD 3.1 fast charging applications including laptops, gaming consoles, and other high-performance portable electronics.
The design utilizes a Power Factor Correction (PFC) + Asymmetrical Half-Bridge (AHB) + synchronous rectification architecture with GaN devices throughout the primary stage.
Key specifications include:
- Input voltage: 90–264 VAC
- Maximum output: 28 V / 5 A (140 W)
- Peak efficiency: 96.21%
- 94.25% efficiency at 90 VAC
- Power density: 31.86 W/in³
- PCB dimensions: 60 × 60 × 20 mm
- Standby power: 100 mW
- EN55022 EMI compliant
The primary stage incorporates:
- ISG6117TM 700 V GaN device with integrated lossless current sensing for the PFC stage
- ISG6233AQH integrated 700 V half-bridge GaN device for the AHB stage
- INN100EBD035DAD 100 V GaN device with 3.5 mΩ RDS(on) for synchronous rectification
The design supports switching frequencies up to 140 kHz in the PFC stage and 130 kHz in the AHB converter while maintaining manageable thermal performance.
The reference platform targets:
- USB PD 3.1 laptop chargers
- Gaming console adapters
- High-performance consumer power adapters
The second platform, INNDAD1K0A1, addresses higher-power applications between 500 W and 1 kW, including robotics, battery chargers, telecommunications equipment, and industrial power supplies.
The design combines:
- Bridgeless Totem-Pole PFC
- High-frequency LLC resonant converter
- Synchronous rectification
using GaN devices throughout the primary switching stage.
Key specifications include:
- Input: 90–264 VAC
- Output: 36–54.6 V (48 V nominal)
- Output power:
- 500 W (90–176 VAC)
- 1 kW (176–264 VAC)
- Peak efficiency: 97.1%
- 95.1% efficiency at full load and 90 VAC
- Power density: 60.6 W/in³
- PCB size: 143 × 70 × 27 mm
The bridgeless totem-pole PFC employs:
- INN650TA050C
- ISG6123TA
The ISG6123TA integrates gate-drive clamping while providing:
- Over-current protection
- Over-temperature protection
- Miller clamp functionality
The LLC resonant stage utilizes INN650TA080BS GaN devices in TOLL packages with Kelvin Source connections to reduce parasitic inductance and support higher-frequency operation.
On the secondary side, INN150EB022EAD 150 V GaN devices provide synchronous rectification with low on-resistance and compatibility with standard DFN5×6 footprints.
The 1 kW reference design targets:
- Robot battery chargers
- Quadruped robot charging systems
- Electric motorcycle and e-bike chargers
- Telecommunications power supplies
- Networking equipment
- Industrial power supplies
- Horticultural lighting systems
With these two reference designs, Innoscience is expanding its GaN ecosystem beyond discrete devices by providing complete evaluation platforms that allow engineers to accelerate product development while achieving higher efficiency, greater power density, and reduced system size.
The company positions the 140 W and 1 kW platforms as development tools that demonstrate the performance advantages of all-GaN AC-DC power conversion across both consumer and industrial applications while helping customers shorten design cycles and accelerate time-to-market.
Original – Innoscience Technology
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Dynex Semiconductor has announced the development of a new 450 A, 650 V gallium nitride (GaN) half-bridge power module designed to deliver ultra-fast switching performance, high efficiency, and advanced thermal management for next-generation power conversion systems.
As demand grows for higher energy efficiency, increased power density, and more compact power electronics, wide-bandgap semiconductor technologies are becoming increasingly important. While silicon carbide (SiC) devices have driven significant improvements in high-power conversion systems, gallium nitride (GaN) technology offers additional advantages in applications where switching speed and efficiency are critical performance drivers.
The new module is based on Gallium Nitride High Electron Mobility Transistors (HEMTs), which offer several key advantages over conventional silicon IGBTs and silicon carbide MOSFETs.
GaN devices support significantly faster switching speeds, enabling operation at higher frequencies while reducing switching losses. Unlike silicon and SiC devices, GaN HEMTs do not contain an intrinsic body diode, eliminating reverse recovery losses and improving efficiency during high-frequency operation.
Additional benefits include lower gate charge and output capacitance, which reduce gate-drive power requirements and improve overall system efficiency. These characteristics allow designers to shrink passive components such as inductors and capacitors, contributing to higher power density and more compact system architectures.
Dynex’s new power module combines GaN semiconductor technology with an advanced packaging approach designed to minimize electrical parasitics and maximize performance.
Key specifications include:
- 450 A continuous current capability
- 650 V blocking voltage
- Half-bridge inverter configuration
- Planar PCB embedding technology
- Double-sided cooling architecture
- Ultra-low commutation loop inductance below 1 nH
A key differentiator is the use of planar PCB embedding technology, which significantly reduces parasitic inductance within the power loop. Maintaining loop inductance below 1 nH enables exceptionally fast switching while minimizing voltage overshoot, ringing, and electromagnetic interference (EMI).
The embedding process also facilitates precise matching and balancing of parallel GaN devices, helping ensure uniform switching characteristics and improved module reliability under high-current operation.
To support high power density and continuous operation, the module incorporates a double-sided cooling architecture. By providing thermal paths on both sides of the semiconductor devices, the design minimizes junction-to-coolant thermal resistance and improves heat extraction efficiency.
This enhanced thermal management capability enables higher power throughput while maintaining safe operating temperatures, helping improve both system reliability and long-term performance.
The combination of ultra-low electrical parasitics and efficient thermal management allows the module to operate effectively in applications where both switching speed and power density are critical requirements.
The 450 A, 650 V GaN module is intended for a broad range of high-performance power conversion systems, including:
- Electric vehicle power electronics
- Renewable energy inverters
- Battery energy storage systems (BESS)
- AI and data center power supplies
- Fast charging infrastructure
- Industrial power conversion equipment
- High-frequency power electronics platforms
The development highlights the growing role of GaN technology in medium-voltage, high-current power conversion applications. While GaN has traditionally been associated with lower-power and high-frequency systems, advancements in packaging, thermal management, and device integration are enabling its expansion into increasingly demanding industrial and infrastructure applications.
By combining high current capability, low inductance packaging, and double-sided cooling, Dynex’s new 450 A, 650 V GaN module demonstrates how wide-bandgap technologies can support the industry’s push toward higher efficiency, greater power density, and more compact power conversion architectures.
As electrification, renewable energy deployment, AI infrastructure growth, and advanced industrial automation continue to accelerate, GaN-based power modules such as this are expected to play an increasingly important role in enabling the next generation of efficient power electronics systems.
Original – Dynex Semiconductor
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Infineon Technologies AG has announced that BRC Solar GmbH has selected its CoolGaN™ Transistor 100 V devices as the core switching technology for the company’s Power Optimizer platform.
The CoolGaN Transistor 100 V family combines high switching performance and power-handling capability in a compact 3 mm × 5 mm package, enabling panel-level maximum power point tracking (MPPT) with high efficiency and power density for solar energy applications. The design win highlights the increasing adoption of gallium nitride technology in renewable energy systems, where efficiency, compact size, and cost effectiveness are key design considerations.
According to Infineon, the CoolGaN Transistor 100 V family enables advanced panel-level MPPT functionality, helping solar systems maximize energy generation under varying operating conditions. The technology is designed to support high switching frequencies, low switching losses, and reduced electromagnetic interference compared with conventional silicon-based solutions.
Johannes Schoiswohl, Senior Vice President and General Manager of Infineon’s GaN Business Line, stated that the adoption of CoolGaN technology by BRC Solar demonstrates the practical benefits of gallium nitride devices in renewable energy applications. He noted that the technology enables higher efficiency, increased power density, and advanced monitoring capabilities while maintaining a compact system footprint.
In rooftop solar installations, partial shading of a single panel can significantly reduce the output of an entire string when maximum power point tracking is implemented only at the string level. Infineon noted that its CoolGaN technology supports cost-effective panel-level MPPT optimization, allowing individual panels to operate closer to their maximum performance and reducing the impact of shading on overall system output.
The company added that the combination of low switching losses, high-frequency operation, and compact package size makes CoolGaN particularly well suited for power optimizer applications, where efficiency, size constraints, and regulatory compliance requirements must be addressed simultaneously.
Pascal Ruisinger, Chief Financial Officer of BRC Solar GmbH, stated that the company has recognized the potential of gallium nitride technology since its founding and views it as an important enabler for high-performance solar power optimizers. He added that both companies share a common goal of utilizing advanced technologies to support the deployment of efficient and affordable renewable energy solutions.
Infineon highlighted that its CoolGaN portfolio includes both discrete and integrated solutions covering a broad range of voltage and power levels. This flexibility enables designers to optimize performance, efficiency, and cost across a wide variety of renewable energy applications.
The resulting Power Optimizer solutions are intended to provide improved energy yield and system performance for residential and commercial rooftop solar installations.
Additional information about Infineon’s CoolGaN portfolio is available through the company’s official channels, while BRC Solar will also showcase its Power Optimizer M600-E and M605-M solutions at The smarter E Europe 2026 exhibition.
Original – Infineon Technologies
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Innoscience announced that the Munich Regional Court has issued two rulings confirming that the company’s currently marketed gallium nitride (GaN) power device products fall outside the scope of the German patents asserted by Infineon Technologies AG and may continue to be commercialized in Germany without restriction.
According to Innoscience, the rulings are consistent with the final determination issued by the U.S. International Trade Commission (ITC) last month, which found that the company’s current products do not infringe Infineon’s asserted U.S. patent related to packaging design (U.S. Patent No. 9,899,481). The German proceedings concern the German counterparts of the same patent family.
The Munich Regional Court found infringement only with respect to a limited number of legacy products, specifically certain packaged 650 V to 700 V GaN transistors that had already been discontinued. As a result, any injunction arising from the rulings would not apply to Innoscience’s current product portfolio.
The company stated that the decisions have no impact on its ongoing operations in Germany or on customers using its currently marketed products.
Innoscience noted that the rulings represent another development in a series of legal decisions across major jurisdictions. The company recently secured an injunction and damages award against Infineon in China and also obtained a favorable outcome at the ITC in the United States. According to Innoscience, these decisions support the continued commercialization of its current product portfolio in key global markets.
While legal proceedings in Germany remain ongoing, including Innoscience’s invalidity challenges against the asserted German patent, the company stated that recent decisions in China, the United States, and Germany have not affected the competitive position of its core product portfolio.
Innoscience said that judicial findings across multiple jurisdictions have confirmed the compliance status of its current products and reinforced confidence in its technology and innovation capabilities.
The company added that it remains focused on advancing its GaN technology portfolio and expanding its global presence while continuing to deliver power semiconductor solutions to customers worldwide.
Original – Innoscience Technology
