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Efficient Power Conversion (EPC) announced a broad licensing agreement with Renesas Electronics Corporation aimed at accelerating adoption of GaN in high-efficiency power systems.
Under the agreement, Renesas will gain access to EPC’s low-voltage eGaN technology and EPC’s established supply-chain ecosystem. The companies plan to collaborate over the next year to stand up internal wafer fabrication capability for these products. Renesas will also second-source several EPC GaN devices that are already in mass production, a move intended to improve supply-chain resilience and long-term availability for customers.
The partnership is framed around the rising demand for higher efficiency, higher power density, and lower carbon footprints in power conversion, where silicon is increasingly constrained by physical limits. GaN transistors, by contrast, enable faster switching, higher efficiency, and smaller form factors—benefits that are driving architecture shifts from consumer applications to AI data center power.
“Together, EPC and Renesas are forming a global alliance to deliver state-of-the-art power efficiency – cutting costs in AI data centers and enhancing autonomous systems,” said Alex Lidow, CEO of EPC.
Renesas recently expanded its GaN position through the acquisition of Transphorm, strengthening its high-voltage GaN portfolio for applications such as AC-DC power supplies, EV chargers, solar inverters, and industrial motor drives. By adding EPC’s low-voltage eGaN expertise, Renesas aims to broaden its portfolio across low- to high-voltage segments, supporting high-volume opportunities such as AI power architectures from 48 V down to 12 V and 1 V, as well as client computing and battery-powered designs.
“Expanding our business into low-voltage GaN allows us to serve the fastest-growing power segments,” said Rohan Samsi, VP, GaN Business Division at Renesas. “This agreement with EPC complements our established high-voltage 650 V+ portfolio and enables us to capitalize on high-volume markets such as AI power architectures from 48 V down to 12 V and 1 V, as well as client computing and battery-operated applications.”
Original – Efficient Power Conversion
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Navitas Semiconductor introduced a 10 kW DC-DC reference platform designed to accelerate the shift toward high-voltage DC (HVDC) power architectures in AI data centers. The company said the platform reaches up to 98.5% peak efficiency at 1 MHz switching frequency, enabling higher power density for large-scale data center expansion.
The all-GaN design uses advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge topology with synchronous rectification. In a full-brick form factor (61 × 116 × 11 mm), Navitas reports 98.5% peak efficiency and 98.1% full-load efficiency, delivering 2.1 kW/in³ power density.
Navitas positions the platform as production-oriented and compatible with both 800 V–to–50 V and ±400 V–to–50 V architectures at 10 kW. It integrates auxiliary power and control functions to simplify adoption and support compact, high-power-density module designs for next-generation HVDC AI data centers.
“The design platform enables the transition to HVDC data center power infrastructure, supporting the future power requirements of AI workloads that will demand between 100- and even 1,000-times more compute per query,” said Chris Allexandre, President and CEO of Navitas Semiconductor. “Navitas continues to redefine what’s possible in AI data center power, with the 10 kW DC-DC solution giving breakthrough efficiency, power density, and scalability to allow faster and cooler operation while making them more sustainable.”
The 10 kW DC-DC platform is currently being evaluated with key data center customers through collaborative development and is scheduled to debut publicly at APEC in San Antonio, Texas, March 22–26, at the Navitas booth (#2027).
Original – Navitas Semiconductor
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Efficient Power Conversion (EPC) has begun volume production of the EPC2366, the first transistor in its seventh-generation eGaN® platform. Engineered to set a new performance bar, the device delivers up to 3× improvement over equivalent silicon MOSFETs, combining a typical RDS(on) of 0.84 mΩ with an optimized RDS(on) × QG figure of merit of 12.6 mΩ·nC to simultaneously cut conduction and switching losses and improve thermal behavior.
Targeted at high-efficiency, high-density systems, EPC2366 is suited for synchronous rectification, high-density DC-DC conversion, AI server power supplies, and advanced motor drives. It supports 40 V drain-to-source operation and 48 V transients, with continuous drain current up to 88 A and pulsed current to 360 A. Thermal performance is aided by a compact 3.3 × 2.6 mm PQFN package featuring a junction-to-case thermal resistance of 0.6 °C/W.
“We have developed a seventh-generation GaN platform that creates a new state-of-the-art in power transistor performance. The 40 V, EPC2366 is the first of this family to enter mass production. However, EPC is sampling seventh-generation 25 V and 15 V transistors now and expects more mass production transitions in the first half of 2026,” said Alex Lidow, CEO and co-founder of EPC.
To speed evaluation, EPC offers the EPC90167 half-bridge board integrating two EPC2366 devices in a low-parasitic layout. It supports standard PWM drive signals and flexible input modes, providing a practical reference platform for real-world assessments in fast, high-current power stages.
Original – Efficient Power Conversion
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Vanguard International Semiconductor Corporation (VIS) signed a technology licensing agreement with Taiwan Semiconductor Manufacturing Company (TSMC) covering high-voltage (650 V) and low-voltage (80 V) Gallium Nitride (GaN) processes. The agreement accelerates VIS’s roadmap for next-generation GaN power solutions serving data centers, automotive electronics, industrial control, and energy management—markets that demand high-efficiency power conversion and higher power density.
Under the pact, VIS will broaden its GaN-on-Si offering into high-voltage applications and establish a comprehensive GaN-on-Si platform alongside its existing GaN-on-QST platform, becoming the only foundry able to provide power GaN on both silicon and QST substrates. VIS plans to support a complete product span—low voltage (<200 V), high voltage (650 V), and ultra-high voltage (1200 V)—strengthening its position across critical power segments.
As silicon approaches performance limits in many power designs, GaN’s efficiency, power density, and compact footprint are enabling new architectures. VIS is building a portfolio from 15 V to 1200 V and will integrate the licensed technology with its current platforms. Process validation will run on VIS’s mature 8-inch line to ensure stability and yield, with development starting in early 2026 and production targeted for the first half of 2028.
“This technology licensing agreement not only underscores the engagement and ongoing collaborative efforts between VIS and TSMC, but also represents our continued commitment to advancing a comprehensive power GaN product portfolio and strengthening our strategic position in compound semiconductors,” said Dr. John Wei, President of VIS. “Through this collaboration, we will accelerate our support for customers in high-performance power conversion applications, enabling the semiconductor power technology to move into the next generation and helping realize a future of green energy and intelligent technologies.”
Original – Vanguard International Semiconductor
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Efficient Power Conversion (EPC) announced that the EPC2366, a 40 V enhancement-mode GaN (eGaN®) power transistor, has received the EPDT 2025 Product of the Year Award in the Power Transistor category. The recognition highlights EPC’s leadership in GaN technology for high-efficiency, high-power-density systems spanning data centers, robotics and AI infrastructure.
The EPC2366 targets fast-switching, low-loss applications and is positioned as a superior alternative to legacy MOSFETs in 12 VOUT synchronous rectifiers. It features an ultra-low RDS(on) of 0.8 mΩ and a gate-charge-based figure of merit (RDS(on) × QG) < 12 mΩ·nC, enabling simultaneous reductions in conduction and switching losses for high-frequency power conversion.
The device supports 40 V drain-to-source operation (48 V transient), continuous drain current up to 88 A at VGS = 5 V, and ~360 A pulsed. As an enhancement-mode GaN device, it offers easy gate drive while delivering GaN advantages such as zero reverse-recovery charge and very low output capacitance, which reduce deadtime losses and boost half-bridge and synchronous rectifier efficiency.
Thermal performance is optimized via a compact 3.3 × 2.6 mm PQFN with backside thermal pad. Typical thermal metrics include RθJC ≈ 0.6 °C/W and RθJB ≈ 1.8 °C/W; junction-to-ambient ranges from ~54 °C/W on a JEDEC board to ~26 °C/W on EPC’s recommended evaluation layout. With proper PCB copper spreading and layout, the device supports reliable operation up to a 150 °C maximum junction temperature.
To accelerate design-in, EPC offers the EPC90167 half-bridge evaluation board featuring two EPC2366 devices in a low-parasitic layout. The platform supports 7.5–12 V gate drive, standard PWM logic levels, and single- or dual-input PWM modes (with managed deadtime), providing a practical reference for DC-DC converters, motor drives and other high-current, high-speed stages. Clearly marked test points and recommended bring-up procedures help engineers evaluate switching behavior, thermals and system performance quickly.
“The EPC2366 showcases our ongoing commitment to help engineers design smaller, faster, and more efficient systems that meet the power demands of tomorrow,” said Alex Lidow, CEO and co-founder of EPC. EPDT Editor Mike Green added, “The differentiation achieved with this device, in terms of FoM and power density, will be of clear value to next-generation power system design.”
Optimized for secondary-side synchronous rectification in 48 V–12 V LLC converters, the EPC2366’s leading FoM enables higher switching frequencies and improved efficiency, making it a strong fit for high-density power supplies in AI data centers and other performance-driven applications.
Original – Efficient Power Conversion
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onsemi announced a collaboration agreement with GlobalFoundries to co-develop and manufacture advanced gallium nitride (GaN) power products on GF’s state-of-the-art 200 mm eMode GaN-on-silicon process, beginning with 650 V devices. The partnership pairs GF’s process platform with onsemi’s silicon drivers, controllers and thermally enhanced packaging to enable smaller, higher-efficiency systems for AI data centers, automotive, industrial, and aerospace, defense and security applications.
The roadmap targets power supplies and DC-DC converters for AI infrastructure, onboard chargers and DC-DC converters for electric vehicles, solar microinverters and energy storage systems, as well as motor drives and other high-growth industrial and mission-critical markets. By combining device technology and package integration, the companies aim to raise power density, improve efficiency and simplify system design.
“This collaboration brings together onsemi’s system and product expertise with GlobalFoundries’ advanced GaN process to deliver new 650 V power devices for high-growth markets. Paired with our silicon drivers and controllers, these GaN products will enable customers to innovate and build smaller, more efficient power systems for AI data centers, EVs, space applications and beyond. We are on track to begin providing samples to customers in the first half of 2026, and scale rapidly to volume production,” said Dinesh Ramanathan, Senior Vice President of Corporate Strategy, onsemi.
“By combining our 200 mm GaN-on-Si platform and U.S.-based manufacturing with onsemi’s deep system and product expertise, we’re accelerating high-efficiency solutions and building resilient supply chains for data centers, automotive, industrial, aerospace and defense, and other critical markets,” said Mike Hogan, Chief Business Officer, GlobalFoundries.
The effort expands onsemi’s intelligent power portfolio across low, medium and high-voltage lateral GaN and ultra high-voltage vertical GaN, enabling next-generation architectures that deliver more power in smaller footprints. Advantages include higher-frequency operation to reduce component count and size, bidirectional capability to unlock new topologies, and increased integration that combines GaN FETs with drivers, controllers, isolation and protection for faster design cycles and lower EMI.
Sampling is planned to begin in the first half of 2026.
Original – onsemi
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Navitas Semiconductor Corporation and Cyient Semiconductors Private Limited, a fast-growing provider of ASIC, ASSP and power solutions, announced a strategic long-term partnership to accelerate GaN adoption in India and establish a complete end-to-end GaN ecosystem.
The collaboration outlines co-development of GaN products, digital and mixed-signal ICs, GaN-based system modules and design-enablement platforms addressing high-voltage, high-power markets in India, including AI data centers, electric mobility, performance computing, energy grid infrastructure and industrial electrification. The partners also intend to strengthen a local supply chain and manufacturing base aligned with the Government of India’s “Make in India” initiative, while deploying IC technologies to speed solution development in these segments.
Planned deliverables include products based on Navitas’ current GaN platforms alongside new devices tailored to India’s market needs. Cyient Semiconductors will focus on building a secure, local supply chain and ecosystem to reduce time-to-market for developers and OEMs across the region.
“This partnership represents a pivotal step in India’s semiconductor future in solving the complexities of power delivery at high voltages,” said Suman Narayan, CEO, Cyient Semiconductors. “By combining Navitas’ proven GaN technology with Cyient Semi’s design, manufacturing and supply-chain strengths, we’re creating a self-sustaining ecosystem that will accelerate the market adoption of GaN. Our goal is to make GaN accessible to every OEM looking to design, build and scale from India.”
“I believe the growth of GaN technology in India will exceed global trends, and Cyient Semiconductors is the perfect partner for Navitas to drive this revolution,” said Chris Allexandre, President and CEO, Navitas Semiconductor. “Together, Navitas and Cyient will power India’s vision of India for India—innovation, by India, for the world.”
The initiative is designed to empower Indian design houses and OEMs with locally sourced GaN components, manufacturing support and engineering collaboration, enabling faster development cycles and lowering barriers to GaN adoption. It also reinforces Cyient Semiconductors’ focus on driving semiconductor innovation, localization and scalability across critical technology sectors, while establishing a direct channel for Indian customers to access GaN technology with reliable procurement and technical support.
Original – Navitas Semiconductor
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VisIC Technologies announced the successful second closing of its Round B funding, securing $26 million to advance GaN power semiconductor technology for electric vehicles. The round was led by a global semiconductor leader, with Hyundai Motor Company and Kia joining as a strategic investor. The milestone strengthens VisIC’s position in high-performance GaN power devices for automotive traction inverters and next-generation mobility.
The global EV market is pushing for higher efficiency, longer driving range, and more sustainable power electronics. Traditional silicon is reaching its limits, and while SiC offers performance advantages, cost remains a barrier for mass adoption. VisIC’s D³GaN™ platform targets both 400 V and 800 V EV architectures, enabling lighter, smaller, and more energy-efficient traction inverters with scalability and reliability.
The new funding will accelerate key programs:
- Optimization, qualification, and release of Gen3 750 V GaN dice and power modules
- Development of Gen4 1350 V GaN technology to cover the full spectrum of EV designs
- Supply-chain stabilization and ramp-up of GaN deliveries for traction inverters
- Expansion of GaN solutions for emerging 800 V data-center power applications
“This investment marks a major milestone for VisIC and the global EV industry. Our D³GaN technology is redefining power electronics for electric vehicles, and the support of our strategic partners accelerates our mission to deliver high-efficiency, scalable solutions for the next generation of mobility,” said Tamara Baksht, CEO of VisIC Technologies.
“Hyundai Motor Company and Kia are committed to advancing sustainable mobility. Partnering with VisIC enables us to integrate cutting-edge GaN technologies into our EV platforms, enhancing efficiency, reliability, and performance as we shape the future of electric transportation,” said Hyundai Motor Company and Kia.
Original – VisIC Technologies
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Wise Integration, Powernet and KEC have signed a strategic memorandum of understanding to co-develop next-generation switched-mode power supply (SMPS) solutions tailored for AI server applications in South Korea. The collaboration supports the country’s broader push to scale AI infrastructure and deploy higher-density data centers.
Under the agreement, Wise Integration will provide GaN power devices, digital-control know-how and technical support. Powernet Technologies Corporation will lead new SMPS designs built on Wise’s WiseGan® and WiseWare® technologies. KEC Corporation will oversee backend manufacturing, including module integration and system-in-package production optimized for the thermal and reliability demands of AI-server racks.
The partners expect the program to accelerate competitive AI-server power supply designs, create new business opportunities in Korea’s AI-server market and shorten time-to-market by leveraging WiseGan® and WiseWare®. The initiative extends an earlier Wise Integration–Powernet collaboration focused on compact, digitally controlled power supplies for faster, smaller and more energy-efficient equipment.
AI servers require high power, generate significant heat and depend on SMPS architectures that convert high-voltage inputs (such as 400 V) to stable 48 V rails with minimal loss. GaN devices paired with digital control enable higher switching frequencies, improved efficiency and tighter management of fast, high-current load transients—attributes well suited to these workloads.
The effort aligns with South Korea’s investments in AI-dedicated data centers, including high-performance GPU clusters and digital infrastructure that demand more efficient, compact and scalable power-conversion systems. “Korea is moving quickly to build the next generation of AI data centers, and power architecture is a critical piece of that effort. Working with Powernet and KEC lets us bring GaN-based digital control into server-grade designs at scale—delivering the efficiency, thermal performance, and responsiveness that modern AI hardware depends on,” said Ghislain Kaiser, CEO of Wise Integration.
Beyond the MoU, Wise Integration continues to broaden its GaN plus digital-control platform to support partners as switching frequencies rise, thermal budgets tighten and efficiency targets become more aggressive. The company recently introduced WiseWare® 1.0 for totem-pole PFC and LLC topologies, a fully digital controller that, while aimed today at gaming, displays and industrial systems, shares the same architecture—high-frequency GaN operation, compact form factor and digitally managed efficiency—that naturally extends to server-class designs envisioned under this Korea-focused collaboration.
Original – Wise Integration
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Suzhou Inovance Automotive Systems Co., Ltd. and Innoscience (Suzhou) Technology Co., Ltd. announced that their next-generation 6.6kW on-board charger system, built on 650V GaN devices, has been successfully integrated into Changan vehicles. The result is a step change in charging efficiency and power density, raising the bar for automotive power electronics.
Inovance Automotive’s two-in-one architecture combines the on-board charger and DC-DC converter in a single unit. By pairing a globally optimized efficiency design with Innoscience’s 650V high-voltage GaN devices—known for ultra-low switching loss and high-frequency performance—the system delivers measurable gains:
· 30% increase in power density, reaching 4.8 kW/L
· Over 2% improvement in overall efficiency compared with similar products
· 20% reduction in system weight, supporting industry goals for higher efficiency and lightweight designThe jointly developed 6.6kW GaN OBC solution also improves vehicle packaging by saving space and enhancing integration flexibility at the platform level. Higher conversion efficiency shortens charging time for drivers and contributes to meaningful energy savings, ultimately supporting extended driving range.
Deploying this GaN-based OBC system in Changan vehicles marks a milestone for GaN in automotive power systems—a breakthrough that strengthens both Inovance Automotive and Innoscience as they expand in the EV sector. The companies plan to continue their collaboration to accelerate the shift toward higher efficiency and greater sustainability across next-generation electric vehicles.
Original – Innoscience Technology
