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With the rapid growth of AI data centers, the increasing adoption of electric vehicles, and the ongoing trends in global digitalization and reindustrialization, global electricity demand is expected to surge. To address this challenge, Infineon Technologies AG is introducing the EasyPACK™ CoolGaN™ Transistor 650 V module, adding to its growing GaN power portfolio.
Based on the Easy Power Module platform, the module has been specifically developed for high-power applications such as data centers, renewable energy systems, and DC electric vehicle charging stations. It is designed to meet the growing demand for higher performance while providing maximum ease of use, helping customers accelerate their design processes, and shorten time-to-market.
“The CoolGaN-based EasyPACK power modules combine Infineon’s expertise in power semiconductors and power modules,” says Roland Ott, Senior Vice President and Head of the Green Energy Modules and Systems Business Unit at Infineon. “This combination offers customers a solution that meets the increasing demand for high-performance and energy-efficient technologies in applications such as data centers, renewable energy, and EV charging.”
The EasyPACK CoolGaN module integrates 650 V CoolGaN power semiconductors with low parasitic inductances, achieved through compact die packing – enabling fast and efficient switching. Delivering up to 70 kW per phase with just a single module, the design supports compact and scalable high-power systems. Furthermore, by combining Infineon’s .XT interconnect technology with CoolGaN options, the module enhances both performance and reliability.
The .XT technology is implemented on a high-performance substrate, significantly reducing thermal resistance, which in turn translates to higher system efficiency and lower cooling demands. This results in increased power density and excellent cycling robustness, even under demanding operating conditions. With support for a broad range of topologies and customization options, the EasyPACK CoolGaN module addresses diverse requirements in industrial and energy applications.
Infineon has sold well over 70 million EasyPACK modules with various chipsets for a wide range of industrial and automotive applications. With the introduction of the CoolGaN power semiconductors in this package, Infineon is now expanding the application range of GaN as its use creates more demand into very high kilowatt applications.
The EasyPACK series leverages Infineon’s PressFIT contact technology, which ensures highly reliable and durable electrical connections between the module and the PCB. By utilizing a cold-welding process, PressFIT delivers gas-tight, solder-free joints that guarantee long-term mechanical stability and electrical conductivity, even under demanding thermal and mechanical conditions. This advanced design reduces manufacturing time and eliminates potential solder-related defects, offering a robust solution for high-reliability applications. Additionally, with its compact design, EasyPACK modules occupy up to 30 percent less PCB surface area than other conventional discrete layouts, resulting in a very cost-effective solution.
The newest 650 V CoolGaN generation provides increased performance and figures of merit. Infineon’s benchmark data shows that CoolGaN Transistor 650 V G5 products provide up to 50 percent lower energy stored in the output capacitance (E oss), up to 60 percent improved drain-source charge (Q oss) and up to 60 percent lower gate charge (Q g). Combined, these features result in increased efficiencies in both hard- and soft-switching applications.
This leads to a significant reduction in power loss compared to traditional silicon technology, ranging from 20 to 60 percent depending on the specific use case. The CoolGaN Transistor 650 V G5 product family offers a wide range of R DS(on) package combinations. Ten R DS(on) classes are available in various SMD packages, such as ThinPAK 5×6, DFN 8×8, TOLL and TOLT. All products are manufactured on high-performance 8-inch production lines in Villach (Austria) and Kulim (Malaysia). Target applications range from consumer and industrial switched-mode power supply (SMPS) such as USB-C adapters and chargers, lighting, TV, data center, and telecom rectifiers to renewable energy and motor drives in home appliances.
Infineon will showcase the EasyPACK modules with CoolGaN at PCIM 2025 in Nuremberg at the Infineon booth in Hall 7, Booth 470. Further information is available here.
Original – Infineon Technologies
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Wise-integration will break new ground at PCIM Europe 2025, May 6–8 in Nuremberg. In collaboration with Savoy International Group, the company will debut its digital controller of a silicon carbide (SiC) power demonstrator model, underscoring its expansion into complementary wide-bandgap (WBG) technologies and showcasing its WiseWare® digital controller’s universality and adaptability across those technologies.
This marks a new market entry for Wise-integration—in particular, targeting SiC-based high-voltage applications in automotive and industrial sectors—while reinforcing that WiseWare® can serve as a common digital intelligence layer regardless of the underlying semiconductor material.
The WiseWare® 1 OBC SIC 7kW power demonstrator model builds on the company’s core expertise in GaN-based systems and digital control ICs, reinforcing its commitment to advancing the full spectrum of power semiconductor technologies. This cross-compatible, digital control solution for both GaN and SiC, enables flexible, efficient, and intelligent power systems across multiple WBG platforms.
“This demonstration of a silicon-carbide onboard charger (OBC) marks an important step in Wise-integration’s journey toward the automotive market,” said CEO Thierry Bouchet. “By showing that WiseWare® can reliably control high-voltage, high-power systems in an EV-relevant application, we’re validating our digital control platform as a strong candidate for next-generation onboard chargers. It’s a first step toward demonstrating that our technology is scalable, adaptable, and aligned with the needs of future EV platforms.”
The demonstrator is a prototype product for the company’s partner, Savoy International Group, a Tier 1 automotive supplier, whose e-mobility division collaborated with Wise-integration on a GaN charger embedded in e-bike batteries in 2023.
“This prototype has been developed specifically to support the electrification of Savoy’s innovative, light electric vehicles under the KILOW brand, as well as their broader ambition to promote fun, accessible, and sustainable mobility solutions,” Bouchet explained.
“Our previous collaboration with Wise-integration on the embedded GaN charger for our e-bike battery met all of our expectations for performance and helps us differentiate KILOW in a crowded field,” said Émile Allamand, CEO of Savoy Group. “The SiC onboard charger will enable us to diversify our EV offerings with a light, four-wheel vehicle under our KILOW brand.”
SiC technology delivers excellent thermal performance and is highly efficient under heavy loads—making it ideal for high-power components like traction inverters and fast chargers. Its ruggedness and maturity also contribute to its reliability in the demanding automotive environment. WiseWare®’s SiC demonstration shows that the company’s digital control platform is technology-agnostic, and can bring the same performance, modularity, and intelligence to SiC systems as it does to GaN systems.
Visit Wise-integration at Hall 6, Booth 450, to see how SiC solutions complement its award-winning GaN-based WiseWare® platform. The company will also share updates on key partnerships and its technology roadmap during the event.
Original – Wise-integration
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EPC will exhibit its latest advancements in high-performance GaN technology at PCIM Europe 2025, taking place 6–8 May in Nuremberg, Germany.
Visit EPC in Hall 9, Stand 318 to see a wide array of GaN-based power solutions powering next-generation applications—from high-density computing to motor drives for humanoid robots, automotive electrification, and satellites. Live demonstrations will highlight EPC’s latest GaN FETs and ICs in real-world applications that emphasize smaller size, higher efficiency, and lower cost compared to silicon solutions.
Motor Drives: Powering Robotics, Automation, and More
From industrial automation to smart consumer devices, GaN-based motor drives offer higher efficiency, smaller size, and improved performance compared to traditional silicon solutions. EPC’s latest GaN technology powers motor drive applications across a wide range of industries, including:
- Humanoids & Quadrupeds – Enabling next-generation robotics with faster response times, lighter joints, and greater energy efficiency.
- Drone Motors – Delivering longer flight times, compact size, and precise control through high-speed switching.
- Power Tools – Extending battery life and increasing torque with compact, high-efficiency GaN motor drives.
- Vacuum Cleaners & Delivery Robots – Empowering smarter, more autonomous systems with high power density and thermal performance.
48 V = GaN: Powering the Future of High-Density Computing
Today’s high-density computing environments demand compact, efficient power solutions to meet rising performance and thermal requirements. EPC’s latest GaN technology for AC/DC server power and 48 V DC-DC power conversion delivers reduced losses, increased power density, enhanced thermal performance, and best-in-class efficiency—enabling more computing in less space.
Visit EPC at PCIM Europe 2025:
- Schedule a Meeting: EPC’s technical experts, including CEO Dr. Alex Lidow, will be on-site to discuss how GaN is driving innovation across multiple industries. To schedule a meeting during PCIM contact info@epc-co.com
- Exhibition Booth Hall 9, Stand 513: Visit EPC’s booth to explore our comprehensive portfolio of GaN-based solutions and applications.
- Technical Presentations: Attend our technical sessions to gain insights into the latest trends and advancements in GaN power conversion technology.
- GaN-Based 5 kW Four-Level Totem-Pole PFC Converter for AI Servers Power Supply; Speaker: Marco Palma
- Bodo’s Power Systems – GaN Expert Panel at PCIM 2025; Panelist: Alex Lidow, Ph.D.
- 5 kW Isolated 400 V to 50 V, DC-DC Converter for Server Power Supplies; Speaker: Michael de Rooij, Ph.D.
- Design of GaN FET-Based Multilevel Three-Phase Inverter for High Voltage Automotive Applications; Speaker: Fabio Mandrile, Polytechnical University of Turin
- Next Generation GaN Platform for High-Density DC-DC Converters; Speaker: Alex Lidow, Ph.D.
“PCIM Europe is the ideal stage to show how EPC’s GaN is transforming power electronics—from server power to robotics, we’re helping engineers unlock the full potential of wide bandgap solutions,” said Nick Cataldo, VP of Sales and Marketing at EPC.
Original – Efficient Power Conversion
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Rohde & Schwarz will showcase its latest solutions and advanced techniques for testing and analyzing power electronic systems and components at PCIM Expo 2025 in Nuremberg, Germany. At the company’s booth (hall 7, booth 166), the spotlight will be on solutions utilizing the company’s cutting-edge test instruments to address the challenges of debugging next generation wide bandgap semiconductors like GaN and SiC.
Rigorous testing and advanced characterization methods help design engineers enhance the performance, efficiency, and reliability of their power electronic designs based on SiC and GaN devices, used in pioneering industries like e-mobility, renewable energy or AI data centers. Rohde & Schwarz will bring a selection of its comprehensive T&M portfolio to booth 166 in hall 7 of PCIM Expo 2025, taking place from May 6 to 8 at the Nuremberg Exhibition Center. The test solutions are tailored for power electronics applications where high efficiency, fast switching speeds, improved power density and high-temperature operation matter.
At the center of the presented setups will be the R&S RT-ZISO isolated probing system from Rohde & Schwarz. This next generation isolated probe has set new standards with unprecedented accuracy, sensitivity, dynamic range and bandwidth for wide bandgap (WBG) power designs with SiC and GaN. Rohde & Schwarz will showcase the advantage of the Isolated probing system over single-ended probes in a setup to investigate the switching behavior of a GaN-MosFET.
Double pulse testing is a method for evaluating the switching performance of SiC and GaN based power devices. Rohde & Schwarz is collaborating with industry expert PE-Systems GmbH for a stable and accurate approach to double pulse testing using the R&S®MXO 5 next generation oscilloscope from Rohde & Schwarz with eight channels in combination with the R&S RT-ZISO. At PCIM, visitors can experience accurate, reliable and fast double pulse testing on 1200 V SiC devices from Wolfspeed, typically used as traction inverters in the automotive industry.
Loadjump testing used to be a time-consuming manual process to verify a Buck converter’s load step response at varying input voltage levels, using only a few reference points. For this application, as well, Rohde & Schwarz collaborates with PE-Systems GmbH, who offers a test automation software. In combination with the MXO 5 oscilloscope and the R&S RT-ZISO isolated probing system, this solution not only reduces overall testing time but also maintains the same number of test points. At PCIM, the companies demonstrate automated loadjump testing of a Buck converter of Monolithic Power Systems, Inc. within a voltage range of 6V to 60V. The setup even allows for more reference points within the same timeframe and can be extended to include temperature control, facilitating the full automation of input voltage, load current, and temperature profile variations.
Rohde & Schwarz will also showcase its solutions for component characterization. The R&S®LCX LCR meters with customized impedance measurement functions are suitable for all discrete passive components up to 10 MHz. Users can easily characterize the voltage dependence of capacitances in core components of power converters like MLCCs with the R&S LCX. Combined with a sweep software tool, users can perform comprehensive sweep measurements and display them in numerous charts. The MFIA impedance analyzer from Zurich Instruments AG (a subsidiary since 2021) is capable of impedance spectroscopy for both low impedance components such as shunt resistors and DC-link capacitors and high impedance systems. It offers measurement modes for impedance analysis over frequency and time as well as other features such as integrated oscilloscope and spectrum analyzer capabilities.
Dr. Philipp Weigell, Vice President of the Industry, Components, Research & University Market Segment at Rohde & Schwarz, explains: “PCIM Expo is an important venue for us to highlight our advancements in wide bandgap semiconductor testing. Testing plays a critical role to improve power efficiency, reduce size, and manage heat more effectively in power conversion applications used in AI data centers, for instance. Through collaboration with industry experts and with our advanced testing solutions we enable our customers to develop reliable and efficient systems that meet the rigorous demands of modern data processing applications.”
Rohde & Schwarz will present these and other advanced test solutions at PCIM Expo 2025, from May 6 to 8, at booth 166, hall 7 of Nuremberg Exhibition Center. For more information on power electronics test solutions from Rohde & Schwarz, visit: https://www.rohde-schwarz.com/power-electronics
Original – Rohde & Schwarz
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Fraunhofer IAF has developed a monolithic bidirectional switch with a blocking voltage of 1200 V using its GaN-on-insulator technology. The switch contains two free-wheeling diodes and can deliver performance and efficiency benefits in bidirectional chargers and drives for electric vehicles as well as in systems for generating and storing renewable energy. The results will be presented together with other developments in power electronics from May 6 to 8, 2025, at PCIM Europe in Nuremberg.
Technological innovations in power electronics are not only essential for the success of the energy transition, they also provide sustainable support for economic development in Europe. The Fraunhofer Institute for Applied Solid State Physics IAF develops power electronic components based on the wide-bandgap compound semiconductor gallium nitride (GaN) to enable further developments in electric mobility, the energy industry, and climate technology.
Most recently, Fraunhofer IAF has made significant progress in high-voltage and low-voltage components: At PCIM Europe 2025, researchers will present a highly integrated bidirectional switch (MBDS) with a blocking voltage of 1200 V. They will also demonstrate the use of a conventional GaN transistor with a gate contact as a bidirectional switch in a 3-level T-type converter. Both results were achieved as part of the GaN4EmoBiL project funded by the German Federal Ministry for Economic Affairs and Climate Action (BMWK).
“Geopolitical challenges such as the current tariff conflicts are an opportunity for European economies to gain technological advantages in the key areas of energy generation and mobility by developing their own solutions in power electronics,” emphasizes Achim Lösch, Business Developer for High Frequency and Power Electronics at Fraunhofer IAF.
“The added value of innovative power electronics is obvious: Achieving more power, better efficiency, and greater compactness at the same time advances the relevant technologies of the future: Electric cars charge faster and energy from renewable sources can be converted and stored more efficiently. At Fraunhofer IAF, we are working intensively to provide positive impetus in these important areas through innovative GaN-based components,” explains Lösch.
Researchers at Fraunhofer IAF have developed a GaN MBDS suitable for the 1200 V voltage class with integrated free-wheeling diodes and successfully integrated it into their own GaN technology. The researchers used the new GaN-on-insulator technology of Fraunhofer IAF for the manufacturing: Highly insulating materials such as silicon carbide (SiC) and sapphire are used as the carrier substrate for the GaN power semiconductor to improve the insulation between the components and increase the breakdown voltage.
The MBDS blocks voltage and conducts current in two directions, which saves chip space and reduces conduction losses as there is only one split depletion region. The GaN MBDS can be used in grid-connected power converters for energy generation and storage as well as electric drive systems. In these applications, the MBDS enables the development of systems in the 1200 V class.
Developers are working intensively on electric vehicles in this voltage class as increasing blocking voltages offer significant advantages in terms of everyday usability: Charging power increases and energy losses during operation decrease as a result of lower resistance. Electric cars with 400 V currently dominate the market, but 800 V technology is gaining ground. The leap to 1200 V has a positive effect on the long-distance capability of electric cars and the utility value of electric trucks.
The 1200 V GaN MBDS with integrated peripherals will be presented by Dr. Michael Basler at the PCIM Conference on May 8 from 10:10 to 10:30 a.m. in the oral session on GaN Devices II on Stage München 1. It is based on Basler’s paper “Highly-Integrated 1200 V GaN-Based Monolithic Bidirectional Switch,” which will be published in conjunction with PCIM 2025.
Fraunhofer IAF has also made progress in the field of multi-level converters with bidirectional switches for blocking voltages up to 48 V: Researchers have used a conventional single-gate HEMT (high electron mobility transistor) based on the aluminum gallium nitride/gallium nitride (AlGaN/GaN) compound semiconductor heterostructure in a low-voltage 3-level T-type converter as a bidirectional switch, thereby achieving simpler control of the transistor than with a bidirectional transistor with two gates for such topologies. Like the 1200 V MBDS, this innovative approach enables simpler control in addition to a space-efficient component design.
On May 6, Daniel Grieshaber will present the results shown in his paper “Investigation of a Single-Gate GaN HEMT as Bidirectional Switch in a Low Voltage Multilevel Topology” at the PCIM Conference Poster Session in the GaN Devices I section from 3:30 to 5:00 p.m. in the foyer.
In addition to innovations in the field of bidirectional switches, researchers at Fraunhofer IAF are working along the entire semiconductor value chain on materials, components, modules and subsystems for GaN-based power electronics in the voltage classes 48 V, 100 V, 200 V, 600 V and 1200 V. The current focus is on lateral and vertical components, monolithic integration, and highly insulating substrates such as sapphire or SiC. In addition to the results presented at PCIM 2025, Fraunhofer IAF is already working on components in the 1700 V class.
Fraunhofer IAF will be presenting an overview of its research and development portfolio in power electronics at the PCIM Expo in Hall 6, Booth 260, from May 6 to 8. Among others, an epitaxial 8-inch GaN wafer, processed 4-inch GaN-on-SiC and GaN-on-sapphire wafers, GaN power ICs, integrated lateral and vertical GaN components and 600 V half-bridge modules based on GaN are being exhibited.
At the PCIM Conference, Dr. Richard Reiner will also summarize the latest power electronics developments at Fraunhofer IAF in his presentation “Lateral, Vertical, Bidirectional! Innovations and Progress in GaN Devices and Power ICs.” It will take place on May 7 from 10:50 to 11:10 a.m. on the Technology Stage.
Original – Fraunhofer IAF
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Polar Semiconductor announced the finalization of a strategic agreement with Renesas Electronics Corporation to license their Gallium Nitride on Silicon D-Mode (GaN-on-Si) technology. As part of this agreement, Polar will fabricate High Voltage 650V Class GaN-on-Si devices for Renesas and other customers in its 200mm automotive quality high-volume manufacturing facility in Minnesota. This facility, recently expanded with state-of-the-art processing and automation equipment, is poised to meet growing demand for next-generation semiconductor solutions.
Polar and Renesas will work together to scale commercial production of GaN devices, expanding its use across critical industries, including automotive, data center, consumer, industrial, and aerospace & defense markets. The agreement ensures the U.S. has a reliable, domestic source for this cutting-edge semiconductor technology.
Market adoption of GaN technology will be accelerated through cost efficiency and innovative device architectures enabled by scaling to 200mm fabrication. By leveraging Polar’s manufacturing expertise and Renesas’ proven power semiconductor technology and commercial leadership, this strategic collaboration ensures customers a secure supply of cost-competitive, superior quality, and high-performance GaN device wafers.
Surya Iyer, President and COO of Polar Semiconductor, said, “This licensing and commercial production agreement underscores our commitment to strengthening the domestic semiconductor ecosystem. GaN is a game-changing technology for Power and RF, and with Renesas as our partner, we are well-positioned to ramp commercial production, secure key defense programs, and drive the next wave of semiconductor innovation.”
“We are excited to partner with Polar to scale our proven GaN technology to 200mm wafers and leverage our know-how across broad power conversion markets ranging from Infrastructure & AI to Energy & Industrial to e-Mobility & xEVs to high-value IoT,” said Chris Allexandre, SVP & GM, Power Products Group, at Renesas. “This collaboration ensures a strong, U.S.-based manufacturing capability for GaN products, provides multi-sourcing to our customers, and meets the growing demand for high-performance power solutions.”
Original – Polar Semiconductor
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Navitas Semiconductor has announced its high-power GaNSafe™ ICs achieve automotive qualification for both AEC-Q100 and AEC-Q101, showcasing GaN’s next inflection into the automotive market.
Navitas high-power GaNSafe 4th generation family integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness in high-power applications. It is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin.
The Automotive Electronics Council (AEC) lists various qualifications focused on failure mechanism-based stress tests for packaged integrated circuits (AEC-Q100) and discrete semiconductors (AEC-Q101) used in automotive applications. Navitas’ GaNSafe™ has been qualified to both standards to ensure that both the discrete power FET stage and the combined IC solution meet these stringent specifications.
To support the qualification, Navitas has created a comprehensive reliability report that analyzes over 7 years of production and field data. It demonstrates their track record, alongside generational and family improvements in robustness and reliability, establishing GaN power ICs as highly reliable and automotive-ready. This reliability report is available to qualified customers.
Additionally in March 2025, Navitas unveiled the world’s first production released 650V Bi-Directional GaNFast ICs with IsoFast Drivers, creating a paradigm shift in power to enable the transition from two-stage to single-stage topologies to further enhance efficiency, power density, and performance in AC-DC and AC-AC conversion. This would allow next-generation single-stage OBCs to provide bi-directional charging in a high-efficiency, extremely compact solution – which eliminates bulky capacitors and input inductors.
A leading EV and solar micro-inverter manufacturer have already begun their implementation of single-stage BDS converters to improve efficiency, size, and cost in their systems. GaNFast-enabled single-stage BDS converters achieve up to 10% cost savings, 20% energy savings, and up to 50% size reductions.
“Our latest reliability report is the culmination of years of innovation and field experience,” said Gene Sheridan, CEO and co-founder of Navitas. “With more than 250 million units shipped, over 2 trillion field devices hours and a cumulative field failure rate that is now approaching 100 parts per billion, we’re leading the charge in making GaN the go-to technology for EV power systems.”
Original – Navitas Semiconductor
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Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN™ Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, thereby further increasing overall system efficiency. Additionally, the integrated solution simplifies the power stage design and reduces BOM cost.
In hard-switching applications, GaN-based topologies may incur higher power losses due to the larger effective body diode voltage (V SD) of GaN devices. This gets worse with long controller dead-times, resulting in lower efficiency than targeted. Until now, power design engineers often require an external Schottky diode in parallel with the GaN transistor or try to reduce dead-times via their controllers. All of which is extra effort, time and cost. The new CoolGaN Transistor G5 from Infineon significantly reduces these challenges by offering a GaN transistor with an integrated Schottky diode appropriate for use in server and telecom IBCs, DC-DC converters, synchronous rectifiers for USB-C battery chargers, high-power PSUs, and motor drives.
“As gallium nitride technology becomes increasingly widespread in power designs, Infineon recognizes the need for continuous improvement and enhancement to meet the evolving demands of customers”, says Antoine Jalabert, Vice President of Infineon’s Medium-Voltage GaN Product Line, “The CoolGaN Transistor G5 with Schottky diode exemplifies Infineon’s dedication to an accelerated innovation-to-customer approach to further push the boundaries of what is possible with wide-bandgap semiconductor materials.“
GaN transistor reverse conduction voltage (V RC) is dependent on the threshold voltage (V TH) and the OFF-state gate bias (V GS) due to the lack of body diode. Moreover, the V TH of a GaN transistor is typically higher than the turn-on voltage of a silicon diode leading to a disadvantage during the reverse conduction operation, also known as third quadrant. Hence, with this new CoolGaN Transistor, reverse conduction losses are lower, compatibility with a wider range of high-side gate drivers, and with deadtime relaxed, there is broader controller compatibility resulting in simpler design.
The first of several GaN transistors with integrated Schottky diode is the 100 V 1.5 mΩ transistor in 3 x 5 mm PQFN package.
Original – Infineon Technologies
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IQE plc, the leading global supplier of compound semiconductor wafer products and advanced material solutions, and X-FAB Silicon Foundries SE announced a Joint Development Agreement (JDA) to create a European-based GaN Power device platform solution.
With an initial two-year scope of work, IQE and X-FAB will collaborate to develop a 650V GaN device. The agreement will leverage IQE’s GaN epitaxy design and process expertise, along with X-FAB’s proven technology development and device fabrication capabilities to offer an optimized technology-substrate combination for automotive, data center and consumer applications.
This collaboration will provide fabless semiconductor companies with a leading-edge, off-the-shelf GaN platform accelerating their innovation cycles and time-to-market. The technology will also serve as a foundation for future product development, extending beyond 650V to address the growing market demand for Power Electronics.
Jutta Meier, Interim Chief Executive Officer and Chief Financial Officer of IQE, comments: “We are excited to join forces with X-FAB to develop a world-class GaN power foundry solution in Europe, providing outsourced optionality for our fabless customers. Building on our GaN epitaxy expertise and recent investment in additional GaN reactor capacity, this agreement aligns with our GaN diversification strategy, expands our customer reach, and accelerates time-to-market for GaN power applications.”
“By combining our long-standing expertise in GaN device fabrication and design enablement with IQE’s epitaxy leadership, we are creating a unique, turnkey GaN Power platform,” explains Jörg Doblaski, Chief Technology Officer at X-FAB. “In addition to our existing GaN technology, this collaboration provides a compelling alternative to existing supply chain models and strengthens Europe’s position in next-generation power semiconductor technology.”
Original – X-FAB Silicon Foundries
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Navitas Semiconductor has announced a new strategic partnership with GigaDevice, a world-leader in microcontrollers (MCUs) and flash memory, to create a joint-lab for integrating and tailoring Navitas’ GaNFast™ ICs & GigaDevice’s Microcontrollers, targeting AI data centers, EVs, Solar, and Energy Saving Systems.
As GaN & SiC power technologies transition power conversion to faster, lighter, and more compact solutions, such as single-stage BDS converters, MCUs need to be optimized to maximize these extremely fast switching characteristics, such as high processing speeds and fast I/O capabilities. A co-developed solution of Navitas’ power and GigaDevice’s control will further accelerate the adoption of GaN & SiC into higher-power markets.
The joint R&D laboratory will integrate both company’s technical product and system-level application expertise to drive innovative advancements in intelligent and efficient power management solutions. Integrating Navitas’ next-generation, clean-energy, GaNFast™ technology with GigaDevice’s advanced high-performance MCU products will enable a new level of integration, performance, and high-power-density digital-power solutions.
As a leader in China’s high-performance general-purpose MCU market, GigaDevice has been widely adopted across diverse sectors including power systems, industrial automation, automotive electronics, and motion control, with cumulative shipments exceeding 2 billion units. GigaDevice’s GD32 high-performance MCU series has been designed to use leading technology and core architecture, with higher processing power, greater storage capacity, and richer on-chip resources, to bring high-end innovative experiences to developers for industrial automation, photovoltaic energy storage, graphic displays, digital power supplies, motor control, and other diversified applications. Their expansive portfolio is complemented by comprehensive industry-specific vertical solutions, delivering exceptional products, tailored technical support, and system-level design services to customers.
Navitas is an industry leader in GaN power technology with a wide portfolio of GaNFast™ power ICs, which enable high-frequency, high-efficiency power conversion, achieving 3x more power and 3x faster charging in half the size and weight compared to prior designs with legacy silicon power devices.
Navitas technology leads across various growth markets including mobile, where they continue to supply 10 of the top 10 smartphone/notebook OEMs with Navitas GaN ICs, with the recent announcement of powering Dell’s™ Family of AI Notebooks. They are the established leader in AI data center solutions enabled by high-power GaNSafe™ and GeneSiC technology, with the world’s firsts in high-efficiency, high-power density designs, such as the 3.2 kW CRPS, achieving a 40% smaller size, world’s highest power density 4.5 kW CRPS, and the world’s first 8.5 kW AI data center power supply powered by GaN and SiC that can meet 98% efficiency, complying with the Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications. For Electric Vehicles, Power Electronics News announced that Changan Automobile would launch the first commercial GaN-Based On-Board Charger (OBC) using Navitas GaN ICs.
The partnership follows Navitas’ strategy of creating an eco-system to support these next-gen, clean-energy solutions. Creating new high-speed isolated drivers, such as IsoFast, integrating ASICs with GaNSense™ ICs for lower power applications, alongside partnering with high-frequency planar magnetics for high-frequency transformers, inductors, and EMI filters, enables simple integrated ‘one-stop shop’ solutions to allow designers to innovate and accelerate these next-gen GaN/SiC-based power electronics.
On April 8th, 2025, Vincent Li, GigaDevice Senior Vice President, CTO, & General Manager of MCU Business Unit, and Charles Zha, VP and GM of Navitas Asia-Pacific, plus other senior executives attended the signing ceremony in Shanghai. Both parties shared their collaboration strategy and discussed operational models for the joint lab.
“Digital power stands as one of GigaDevice’s core strategic markets. MCUs play a pivotal role in advancing the intelligence of digital power systems, enhancing energy efficiency, and ensuring operational security.” said Vincent Li, GigaDevice Senior Vice President, CTO, and General Manager of MCU BU. “By working with Navitas, we will deeply integrate GigaDevice’s advanced MCU with Navitas’ leading GaNFast™ technology to develop competitive solutions for industrial automation and new energy vehicles. This collaboration not only technological synergy but also a critical step toward greener, more efficient industry development.”
“Navitas continues to innovate our GaNFast power IC technology to achieve our mission to ‘Electrify Our World™’”, said Charles Zha, SVP and GM of Navitas Asia-Pacific. “The joint lab with GigaDevice will amplify our complementary strengths in IC design, manufacturing, and ecosystem development and accelerate R&D for next-gen, high-efficiency power solutions, reinforcing our ‘Smart + Green’ strategic vision. We look forward to delivering faster, energy-saving innovations to global customers and pioneering a new era of collaboration in power electronics.”
Original – Navitas Semiconductor
