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Infineon Technologies AG and SolarEdge Technologies, Inc. have announced a strategic collaboration to advance SolarEdge’s Solid-State Transformer (SST) platform for next-generation artificial intelligence (AI) and hyperscale data centers.
The partnership focuses on the co-design, optimization, and validation of a modular 2–5 megawatt (MW) SST building block. This platform combines Infineon’s advanced silicon carbide (SiC) switching technology with SolarEdge’s high-efficiency power conversion and control topology. The result is an SST solution delivering greater than 99 percent efficiency, supporting the transition to high-efficiency, DC-based data center infrastructure.
Solid-State Transformer technology is emerging as a foundational element in future 800-volt direct current (VDC) data center power architectures. It offers several key advantages, including significantly reduced size and weight, a lower CO₂ footprint, and faster deployment of power distribution infrastructure. The SST being jointly developed will enable direct medium-voltage (13.8–34.5 kV) to 800–1500 V DC conversion, streamlining the connection between public utility grids and high-performance compute environments.
“Collaborations like this are key to enabling the next generation of 800-volt DC data center power architectures and further driving decarbonization,” said Andreas Urschitz, Chief Marketing Officer at Infineon. “With high-performance SiC technology from Infineon, SolarEdge’s proven capabilities in power management and system optimization are enhanced, creating a strong foundation for the efficient, scalable, and reliable infrastructure demanded by AI-driven data centers.”
Shuki Nir, CEO of SolarEdge, added: “The AI revolution is redefining power infrastructure. It is essential that the data center industry is equipped with solutions that deliver higher levels of efficiency and reliability. SolarEdge’s deep expertise in DC architecture uniquely positions us to lead this transformation. Collaborating with Infineon brings world-class semiconductor innovation to our efforts to build smarter, more efficient energy systems for the AI era.”
As AI infrastructure drives a surge in global power demand, data center operators are increasingly focused on achieving greater efficiency, reliability, and sustainability. This collaboration builds on SolarEdge’s 15 years of leadership in DC-coupled architecture and high-efficiency power electronics, enabling it to expand into the data center sector with solutions optimized for grid-to-rack power distribution.
Infineon’s broad portfolio of semiconductor solutions—including technologies based on silicon, silicon carbide, and gallium nitride—is enabling power systems that reduce environmental impact and operating costs across the AI data center ecosystem.
Original – Infineon Technologies
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Efficient Power Conversion Corporation (EPC) has announced the release of a high-efficiency, high-power-density 5 kW AC-to-48 V DC reference design. The new system highlights the full performance potential of GaN technology for next-generation data center, server, and AI power architectures.
The complete 5 kW solution includes two modular systems: the EPC91107KIT 4-Level Totem-Pole Power Factor Correction (PFC) stage and the EPC91110KIT Input-Series Output-Parallel (ISOP) LLC Converter. Together, they deliver up to 96.5% system efficiency with a combined power density of 116 W/in³. The design meets Open Rack V3 (OCP ORv3) size specifications and achieves superior performance with significantly smaller size and lower cost compared to traditional silicon-based solutions.
The EPC91107KIT front-end converts 240 VAC to 400 VDC using a 4-Level Flying Capacitor Totem-Pole PFC topology built around EPC2304 (200 V, 5 mΩ) GaN FETs. This stage achieves up to 98.5% efficiency at 5 kW and delivers 25 A input current at a 240 VAC nominal input with a 140 kHz switching frequency. It also reduces the size of the PFC inductor by nine times and the EMI filter by 40% compared to conventional two-level designs.
The EPC91110KIT isolation stage steps down the 400 V bus to 50 VDC using four 1.375 kW LLC converter modules in an ISOP configuration. Each module, built with EPC2305 (150 V, 3 mΩ) GaN FETs, achieves 98.2% peak efficiency, combining for a total output of 5.5 kW.
As AI workloads drive unprecedented demand for efficient and compact power solutions, GaN technology enables smaller magnetics, reduced thermal requirements, and higher switching frequencies—leading to higher power density and lower system costs.
EPC’s 5 kW reference design is scalable to larger systems, supporting 33 kW, 48 kW, and even 108 kW rack architectures. This makes it ideal for next-generation AI servers, data centers, and telecom power shelves that demand maximum efficiency and reliability.
“GaN is transforming power conversion for AI and data centers, delivering higher efficiency, smaller size, and lower cost—without compromising scalability or reliability,” said Alex Lidow, CEO of EPC.
All reference design boards and GaN devices are available now through authorized distributors, including Digi-Key.
The 5 kW reference design demonstrates EPC’s continued leadership in GaN-based power conversion, showcasing how advanced wide bandgap devices can deliver superior efficiency, scalability, and performance for AI-driven and high-performance computing applications.
Original – Efficient Power Conversion
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ROHM has published a new white paper exploring advanced semiconductor solutions that enable the next generation of AI data centers powered by the 800 VDC architecture. The paper highlights ROHM’s role as a leading innovator in wide bandgap technologies and system-level power design for large-scale, energy-efficient computing infrastructure.
Developed as part of ROHM’s ongoing collaboration with NVIDIA and other industry partners, the white paper outlines strategies for implementing 800 VDC power distribution across AI data centers—a shift expected to transform data center design by enhancing efficiency, scalability, and sustainability.
The 800 VDC architecture supports the evolution of gigawatt-scale AI factories by significantly improving power density and reducing conversion losses. ROHM’s broad portfolio of silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) power devices, combined with its analog IC expertise, positions the company to deliver optimized solutions for each stage of power conversion.
The paper details how the traditional AC-DC conversion process, typically performed inside server racks, can be relocated to a centralized power rack under the 800 VDC system. This approach simplifies design, improves thermal performance, and allows higher-density configurations for GPU-heavy AI workloads.
ROHM’s EcoSiC™ and EcoGaN™ device families are featured prominently as key enablers of this transition. The EcoSiC™ series provides industry-leading low on-resistance and top-side cooling modules for high-power AI servers, while the EcoGaN™ series integrates GaN performance with ROHM’s proprietary analog IC technologies, including Nano Pulse Control™, enabling fast, precise, and stable high-frequency operation.
Through collaborations with NVIDIA, Delta Electronics, and data center operators, ROHM continues to drive innovation in wide bandgap semiconductors and analog control technologies. Its new white paper underscores the company’s commitment to building efficient, reliable, and sustainable AI data center infrastructure based on 800 VDC power delivery systems.
Original – ROHM
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GaN / LATEST NEWS / PRODUCT & TECHNOLOGY / Si / SiC / TOP STORIES / WBGSeptember 10, 2025
2 Min ReadInfineon Technologies AG introduced a 12 kW reference design for high-performance power supply units (PSUs), specifically designed for AI data centers and server applications. The reference design offers high efficiency and high-power density, and leverages all relevant semiconductor materials silicon (Si), silicon carbide (SiC) and gallium nitride (GaN). It is aimed at research and development engineers, hardware designers, and developers of power electronics systems.
“In the ongoing quest of the increased energy demand of artificial intelligence, Infineon’s contribution is to provide power solutions with the highest conversion efficiency to preserve every single possible Watt,” said Richard Kunčič, Senior Vice President and General Manager Power Switches at Infineon. “Our new 12 kW high-density power supply unit reference design is using advanced power conversion topologies and therefore utilizing CoolMOS™, CoolSiC™ and CoolGaN™ which allows the PSU to release the full potential in energy efficiency, reliability, and power density. We are proud to be at the forefront of powering AI.”
To achieve high-performance levels, the design leverages advanced power conversion topologies in both the AC/DC and DC/DC power stages. The front-end AC/DC converter features a 3-level flying capacitor interleaved power factor correction (PFC) topology, delivering peak efficiency above 99.0 percent while reducing magnetic component volume. This is achieved by Infineon’s CoolSiC technology, which offers high switching performance and excellent thermal properties. The isolated DC/DC converter features a full-bridge LLC resonant converter and offers peak efficiency above 98.5 percent, enabled by using two planar high-frequency transformer and Infineon’s CoolGaN technology. These architectures, combined with Infineon’s latest wide-bandgap technologies, achieve a power density of up to 113 W/in³.
Another key feature of the 12 kW PSU reference design is the bidirectional energy buffer, which is integrated into the overall power supply topology. This converter enables compliance with hold-up time requirements while significantly reducing capacitance requirements. Furthermore, the energy buffer provides a grid-shaping function, improving system reliability and limiting both fluctuations and the rate of change of power drawn from the grid during transient events.Original – Infineon Technologies
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As large AI models and high-performance computing place higher demands on power supply systems, Innoscience announced a collaboration with NVIDIA, a global leader in AI technology, to jointly promote the large-scale implementation of an 800 VDC power architecture in AI data centers.
NVIDIA’s 800 VDC architecture is the latest generation of power systems specifically designed to efficiently power future megawatt-scale computing infrastructure. Compared to traditional 54 V power systems, the 800 VDC architecture offers significant advantages in system efficiency, heat dissipation, and reliability, enabling it to support an 100x to 1000x increase in AI computing power.
As the world’s leading GaN IDM, Innoscience’s third-generation GaN devices offer exceptional high frequency, high efficiency, and high power density. They provide NVIDIA’s 800 VDC architecture with a full-link GaN power supply solution, from 800 V input to GPU terminals, covering 15 V to 1200 V. With the deep integration of 800 VDC power architecture and GaN technology, AI data centers will achieve a quantum leap from kilowatts to megawatts in the coming years, ushering in an era of more efficient, reliable, and greener AI computing.
Original – Innoscience Technology
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As artificial intelligence continues to redefine the boundaries of computing, the infrastructure powering these advancements must evolve in parallel. A recognized leader in power semiconductor technology, ROHM is proud to be among the key silicon providers supporting NVIDIA’s new 800 V High Voltage Direct Current (HVDC) architecture. This marks a pivotal shift in data center design, enabling megawatt-scale AI factories that are more efficient, scalable, and sustainable.
ROHM’s power device portfolio spans both silicon and wide bandgap technologies, including silicon carbide (SiC) and gallium nitride (GaN), offering a strategic path for data center designers. The company’s silicon MOSFETs are already widely adopted across automotive and industrial sectors, providing a cost-effective and reliable solution for today’s power conversion needs. These are ideal for applications where price, efficiency, and reliability must be balanced, making them a strong fit for transitional stages of AI infrastructure development.
A standout example is the RY7P250BM, a 100V power MOSFET endorsed by major global cloud providers designed specifically for hot-swap circuits in 48V power systems—an essential component in AI servers. Key features include best-in-class SOA (Safe Operating Area) performance and ultra-low ON resistance (1.86 mΩ) in a compact 8080 package. These characteristics help reduce power loss and improve system reliability—crucial requirements in high-density, high-availability cloud platforms. As data centers transition from 12V to 48V and beyond, hot-swap capability becomes critical for maintaining uptime and protecting against inrush currents.
Industrial-grade rectification with minimal losses is an area where ROHM’s SiC devices excel and align with NVIDIA’s plans to begin large-scale deployment of its 800V HVDC data center architecture to power 1 MW compute racks and beyond. At the heart of NVIDIA’s new infrastructure is the conversion of 13.8kV AC from the grid directly into 800V DC. The initiative is designed to address the inefficiencies of traditional 54V rack power systems, which are constrained by physical space, copper overload, and conversion losses.
ROHM’s SiC MOSFETs deliver superior performance in high-voltage, high-power environments, offering higher efficiency through reduced switching and conduction losses, greater thermal stability for compact, high-density systems, and proven reliability in mission-critical applications. These characteristics align perfectly with the requirements of the NVIDIA 800 V HVDC architecture, which aims to reduce copper usage, minimize energy losses, and simplify power conversion across the data center.
Complementing SiC, ROHM is advancing gallium nitride technologies under the EcoGaN™ brand. While SiC is best-suited for high voltage, high current applications, GaN offers exceptional performance in the 100V to 650V range, with superior breakdown field strength, low ON resistance, and ultra-fast switching. ROHM’s broad EcoGaNTM lineup includes 150V and 650V GaN HEMTs, gate drivers, and integrated power stage ICs. At the same time, proprietary Nano Pulse ControlTM technology further improves switching performance, reducing pulse widths to as low as 2ns. These innovations support the growing demand for smaller, more efficient power systems in AI data centers.
Beyond discrete devices, ROHM offers a lineup of high-power SiC modules, including top-side cooling molded packages such as the HSDIP20, equipped with advanced 4th Gen SiC chips. These 1200V SiC modules are optimized for LLC topologies in AC-DC converters and primary-side applications in DC-DC converters. Engineered for high-efficiency, high-density power conversion, they are particularly well-suited for the centralized power systems envisioned in NVIDIA’s architecture. Their robust thermal performance and scalability make them ideal for 800 V busways and MW-scale rack configurations.
The transition to an 800V HVDC infrastructure is a collaborative effort. ROHM is committed to working closely with industry leaders like NVIDIA as well as data center operators and power system designers to provide the foundational silicon technologies needed for this next generation of AI factories. Our expertise in power semiconductors, particularly in wide-bandgap materials like SiC and GaN, positions us as a key partner in developing solutions that are not only powerful but also contribute to a more sustainable and energy-efficient digital future.
Original – ROHM
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At this month’s IEEE Energy Conversion Congress and Expo (ECCE), Navitas Semiconductor introduced conference attendees to ‘IntelliWeave’ – an innovative patented new digital control technique for improving next generation AI data center power supply (PSU) efficiency.
In a world where ever-more energy is needed for the processing of artificial intelligence (AI) and cloud-based applications, minimizing power consumption has become a priority for data center architects and operators. Combining next-generation GaN and SiC semiconductors with new control technique strategies to power conversion plays a key role in achieving this goal.
IntelliWeave’s novel digital control enables highest system efficiencies with precision current sharing, ultra-fast dynamic response and minimal phase error. A patented dual-loop and dual-feed-forward interleaving control achieves absolute zero voltage switching (ZVS) across the full-load range to enable highest efficiencies.
The digital control for Critical Conduction Mode (CRM) interleaving Totem Pole Power Factor Control (PFC) enables 30% reduction in power losses compared to existing Continuous Conduction Mode (CCM) solutions. The digital control combined with high-power GaNSafe power ICs has been proven on a 500 kHz GaN-based interleaving 3.2 kW CrM PFC PSU operating at 99.3% peak efficiency including EMI filter loss.
Taking place in Phoenix, Arizona from October 20th to 24th, IEEE ECCE 2024 features both industry-driven and application-oriented technical sessions and brings together practicing engineers, researchers and other professionals for interactive and multidisciplinary discussions on the latest advances in various areas related to energy conversion.
On October 21st Tao Wei presented “Novel digital control for a GaN-based CrM interleaved TP PFC”.
Original – Navitas Semiconductor
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Data centers are currently responsible for more than two percent of global energy consumption. Fueled by AI, this number is expected to grow to up to around seven percent in 2030, matching the current energy consumption of India. Enabling efficient power conversion from grid-to-core is vital to enable superior power densities and thereby advance compute performance while reducing total cost of ownership (TCO).
Infineon Technologies AG is therefore launching the TDM2354xD and TDM2354xT dual-phase power modules with best-in-class power density for high-performance AI data centers. These modules enable true vertical power delivery (VPD) and offer industry’s best current density of 1.6 A/mm2. They follow the TDM2254xD dual-phase power modules introduced by Infineon earlier this year.
“We are proud to enable high-performance AI data centers with our TDM2354xT and TDM2354xD VPD modules. These devices will maximize system performance with Infineon’s trademark quality and robustness, thereby enabling best TCO for data centers,” said Rakesh Renganathan, Vice President Power ICs at Infineon Technologies. “Our industry-leading power devices and packaging technologies, combined with our extensive systems expertise, will further advance high-performance and green computing as part of our mission to drive digitalization and decarbonization.”
The TDM2354xD and TDM2354xT modules combine Infineon’s robust OptiMOS™ 6 trench technology, a chip-embedded package that enables superior power density through enhanced electrical and thermal efficiencies, and a new inductor technology to enable lower profile and therefore, true vertical power delivery.
As a result, the modules set new standards in power density and quality to maximize the compute performance and efficiency of AI data centers. The TDM2354xT modules support up to 160 A and are the industry’s first Trans-Inductor Voltage Regulator (TLVR) modules in a small 8 x 8 mm² form factor. Combined with Infineon’s XDP™ controllers, they offer extremely fast transient response and minimize on-board output capacitance by up to 50 percent, further increasing system power density.
The new modules will be showcased at Infineon’s global technology forum OktoberTech™ 2024 in Silicon Valley on 17 October and at electronica 2024 in Munich from November 12 to 14 (hall C3, booth 502).
Original – Infineon Technologies
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With the increasing power requirements of Artificial Intelligence (AI) processors, server power supplies (PSUs) must deliver more and more power without exceeding the defined dimensions of the server racks. This is driven by a surge in energy demand of high-level GPUs, which could consume 2 kW and more per chip by the end of the decade.
These needs, as well as the emergence of increasingly demanding applications and the associated specific customer requirements have prompted Infineon Technologies AG to extend the development of SiC MOSFETs to voltages below 650 V. The company is now launching the new CoolSiC™ MOSFET 400 V family, which is based on the second generation (G2) CoolSiC technology introduced earlier this year.
The new MOSFET portfolio was specially developed for use in the AC/DC stage of AI servers, complementing Infineon’s recently announced PSU roadmap. The devices are also ideal for solar and energy storage systems (ESS), inverter motor control, industrial and auxiliary power supplies (SMPS) as well as solid-state circuit breakers for residential buildings.
“Infineon offers an extensive portfolio of high-performance MOSFETs and GaN transistors to meet the demanding design and space requirements of AI server power supplies”, said Richard Kuncic, Head of the Power Systems Business Line at Infineon. “We are committed to supporting our customers with advanced products such as the CoolSiC MOSFETs 400 V G2 to drive highest energy efficiency in advanced AI applications.”
The new family features ultra-low conduction and switching losses when compared to existing 650 V SiC and Si MOSFETs. Implemented in a multi-level PFC, the AC/DC stage of the AI Server PSU can attain a power density of more than 100 W/in³ and is proven to reach 99.5 percent efficiency.
This is an efficiency improvement of 0.3 percentage points over solutions using 650 V SiC MOSFETs. In addition, the system solution for AI Server PSUs is completed by implementing CoolGaN™ transistors in the DC/DC stage. With this combination of high-performance MOSFETs and transistors, the power supply can deliver more than 8 kW with an increase in power density by a factor of more than 3 compared to current solutions.
The new MOSFET portfolio comprises a total of 10 products: five R DS(on) classes from 11 to 45 mΩ in Kelvin-source TOLL and D²PAK-7 packages with .XT package interconnect technology. The drain-source breakdown voltage of 400 V at T vj = 25°C. makes them ideal for use in 2- and 3-level converters and for synchronous rectification.
The components offer high robustness under harsh switching conditions and are 100 percent avalanche tested. The highly robust CoolSiC technology in combination with the .XT interconnect technology enables the devices to cope with power peaks and transients caused by sudden changes in the power requirements of the AI processor. Both the connection technology and a low and positive R DS(on) temperature coefficient enable excellent performance under operating conditions with higher junction temperatures.
Original – Infineon Technologies
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The influence of artificial intelligence (AI) is driving up the energy demand of data centers across the globe. This growing demand underscores the need for efficient and reliable energy supply for servers. Infineon Technologies AG opens a new chapter in the energy supply domain for AI systems and unveils a roadmap of energy efficient power supply units (PSU) specifically designed to address the current and future energy need of AI data centers.
By introducing unprecedented PSU performance classes, Infineon enables cloud data center and AI server operators to reduce their energy consumption for system cooling. The innovative PSUs reduce power consumption and CO 2 emissions, resulting in lower lifetime operating costs. The powerful PSUs are not only used in future data centers but can also replace existing power supply units in servers and increase efficiency.
In addition to the current PSUs with an output of 3 kW and 3.3 kW available today, the new 8 kW and 12 kW PSUs will contribute to further increasing energy efficiency in future AI data centers. With the 12 kW reference board, Infineon will offer the world’s first power supply unit that achieves this level of performance and supplies future data centers with power.
“At Infineon, we power AI. We are addressing a critical question of our era – how to efficiently meet the escalating energy demands of data centers,” says Adam White, Division President Power & Sensor Systems at Infineon. “It’s a development that was only possible by Infineon’s expertise in integrating the three semiconductor materials silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) into a single module. Our PSU portfolio is therefore not only an example of Infineon’s innovative strength, which leads to first-class results in terms of performance, efficiency and reliability for data centers and the AI ecosystem. It also reinforces Infineon’s market leadership in power semiconductors.”
Infineon is responding to the requirements of data center operators for higher system efficiency and lower downtimes. The growth of server and data center applications has led to an increase in power requirements, necessitating the development of power supplies with higher power ratings from 800 W up to 5.5 kW and beyond. This increase is driven by the growing power requirements of Graphic Process Units (GPU) on which AI applications are computed.
High-level GPUs now require up to 1 kW per chip reaching 2 kW and beyond by the end of the decade. This will lead to higher overall energy demand for data centers. Depending on the scenario, data centers will account for up to seven percent of global electricity consumption by 2030; this is an order of magnitude comparable to India’s current electricity consumption.
Infineon’s new PSUs contribute to the efforts to limit the CO 2 footprint of AI data centers despite the rapidly growing energy requirements. This is made possible by a particularly high level of efficiency that minimizes power losses. Infineon’s new generation PSUs achieve an efficiency of 97.5 percent and meet the most stringent performance requirements. The new 8 kW PSU is capable of supporting AI racks with an output of up to 300 kW and more. Efficiency and power density is increased to 100 watts per in³ compared to 32 W/in³ in the available 3 kW PSU, providing further benefits for the system size and cost savings for operators.
From a technical perspective, this is made possible by the unique combination of the three semiconductor materials Si, SiC and GaN. These technologies contribute to the sustainability and reliability of AI server and data center systems. Innovative semiconductors based on wide-bandgap materials such as SiC and GaN are the key to a conscious and efficient use of energy to drive decarbonization.
The 8 kW Power Supply Unit will be available in Q1 2025. For more information about the PSU roadmap, please click here.
Infineon at the PCIM Europe 2024
PCIM Europe will take place in Nuremberg, Germany, from 11 to 13 June 2024. Infineon will present its products and solutions for decarbonization and digitalization in hall 7, booths #470 and #169. Company representatives will also be giving several presentations at the accompanying PCIM Conference and Forums, followed by discussions with the speakers. Information about Infineon’s PCIM 2024 show highlights is available at www.infineon.com/pcim.
Original – Infineon Technologies
