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Efficient Power Conversion (EPC) has started mass production of its 100V integrated GaN power-stage IC family, comprising the EPC23108, EPC23109, EPC23110 and EPC23111. The devices target high-performance motion control and power conversion applications including humanoid robots, drones and industrial motor drives.
The monolithic ePower Stage ICs integrate high-side and low-side eGaN FETs, gate drivers and level-shifting circuitry in compact, thermally enhanced QFN packages. The family supports operation up to 100V, with current ratings of 35A and 20A depending on the device.
The integrated power stages incorporate fast fault shutdown, safe gate control during power-loss conditions and support for continuous operation at 100% duty cycle. EPC also offers single-input PWM variants intended to simplify control in multi-axis motor drive systems.
Alongside the production launch, EPC is offering the EPC91128, EPC91129, EPC91130 and EPC91131 three-phase BLDC motor drive evaluation boards. The boards are based on the four new ePower Stage ICs and integrate gate drivers, current and voltage sensing, housekeeping power supplies, temperature monitoring and protection functions.
Applications for the new devices include humanoid robotics, drones, industrial motor drives, medical equipment, synchronous rectification and high-density DC-DC converters. EPC said production volumes are currently ramping through its global distribution network.
EPC is also releasing a technical white paper covering the architecture, design considerations and evaluation platforms for the EPC23108/09/10/11 family, with versions available in English and Chinese. The document provides implementation guidance for robotics, drones and high-performance motor-drive systems.
Original – Efficient Power Conversion
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Navitas Semiconductor has signed a definitive agreement to acquire Claros, a developer of vertical power delivery (VPD) and integrated voltage regulator (IVR) technologies for AI data centers, in a transaction valued at up to approximately $232.8 million.
The acquisition will expand Navitas’ AI power portfolio from its existing GaN and high-voltage silicon carbide technologies into processor-level power delivery. Claros develops VPD and IVR solutions designed to supply the high currents required by GPUs, CPUs, TPUs, NPUs and other AI accelerators.
Claros’ technology integrates power conversion, drive, control and passive components into compact packages that can be positioned beneath or within the processor package or printed circuit board. By reducing the distance between voltage regulation and the processor, the architecture is designed to lower impedance and board-level distribution losses while improving transient response and efficiency at sub-volt operating levels.
The technology will complement Navitas’ GaNFast GaN and GeneSiC SiC portfolio, which the company is positioning for higher-voltage stages of AI data center power architectures, including emerging 800V HVDC systems. The combination is intended to extend Navitas’ coverage across the power chain from grid-level conversion through processor-level voltage regulation.
Claros will also add capabilities in digital control, passive integration, advanced 2D and 3D packaging, and power and analog mixed-signal technologies. The company’s standalone digital and controller technologies will complement Navitas’ existing GaN product portfolio.
Navitas expects the acquisition to more than double its identified 2030 serviceable available market (SAM) to more than $8 billion. The company estimates that VPD and IVR will add at least $3.5 billion of potential market opportunity, alongside its existing $3.5 billion SAM for GaN and high-voltage/ultra-high-voltage SiC and approximately $1 billion associated with new junction field-effect transistor technology.
Navitas expects Claros’ VPD and IVR technologies to become an additional growth contributor beginning around 2028 to 2029. The company said its existing short- to mid-term financial model and Navitas 2.0 strategy remain unchanged, including its previously stated timeline toward profitability.
Under the merger agreement, Navitas will pay approximately $216 million at closing through a combination of cash and Class A common stock. Additional consideration will be paid in Navitas shares if specified business milestones are achieved during the two years following closing, bringing the total potential transaction value to approximately $232.8 million.
The stock portion of the consideration is based on Navitas’ August 21, 2026 closing share price of $12.97. Certain continuing Claros employees will also be eligible for approximately $28.9 million of performance-based equity compensation, based on the same reference share price and achievement of specified business milestones.
The boards of directors of both companies have unanimously approved the transaction. The acquisition is expected to close before the end of 2026, subject to regulatory approvals and other customary closing conditions.
Original – Navitas Semiconductor
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ROHM has developed its 4th Generation 650V IGBTs for automotive auxiliary systems and industrial equipment, combining low conduction losses with high short-circuit tolerance. Target applications include automotive electric compressors and high-voltage heaters, as well as industrial inverters, motors and compressors.
The new automotive-grade devices achieve VCE(sat) of 1.55V and comply with the AEC-Q101 automotive reliability standard. ROHM redesigned the device structure, manufacturing process and edge termination to increase current density while reducing both conduction and switching losses.
The devices provide a short-circuit withstand time of 7µs at a junction temperature of 25°C. This characteristic is designed to provide sufficient time for inverter and heater control circuits to detect overcurrent conditions and interrupt operation while maintaining low-loss performance during normal operation.
ROHM is positioning the 650V devices primarily for lower-power automotive systems where silicon IGBTs continue to be used alongside the increasing adoption of SiC in higher-power EV applications such as traction inverters. The devices also address industrial motor drives, compressors and other inverter-based equipment.
The initial portfolio includes 12 TO-247N packaged products in the RGAxxTS65HR and RGAxxTS65EHR series, along with 10 SG83xxWN bare-wafer products. ROHM is also developing 12 devices in the four-lead TO-247-4L package under the RGAxxTR65HR and RGAxxTR65EHR series.
TO-247N products and selected bare-wafer versions are already available, with a sample price of $8.50 per unit excluding tax. ROHM also provides design models and supporting materials for circuit development.
The company plans to expand the portfolio with additional devices using the existing packages as well as compact surface-mount IGBTs in TO-263L and top-side-cooled packages.
Original – ROHM
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Infineon Technologies has agreed to acquire C2i Semiconductors, a Bangalore-based technology company specializing in software-defined multiphase controllers and smart power stages for AI data center applications. The transaction is expected to close in the third quarter of calendar 2026. Financial terms were not disclosed.
C2i’s technology will complement Infineon’s existing portfolio of power semiconductors and power systems, expanding its capabilities in intelligent and scalable power delivery architectures for AI servers and high-performance computing platforms.
Software-defined power solutions combine power semiconductors with digital control and software algorithms to optimize power conversion, regulation and system performance in real time. These technologies are designed to respond to the highly dynamic and rapidly changing power requirements of AI processors while maintaining efficiency and system stability.
C2i takes a system-level approach to power delivery spanning the path from grid to processor core. Its technology is intended to support more adaptive power architectures that can reduce power losses and address the increasing power-density requirements of next-generation AI infrastructure.
The acquisition will combine C2i’s digital power technologies with Infineon’s portfolio of silicon, silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. Infineon also plans to use the additional capabilities to advance next-generation vertical power delivery architectures and future Substrate Integrated Voltage Regulators (SIVR).
Infineon said C2i’s expertise in multiphase controllers, smart power stages and software-defined power management will strengthen its ability to develop integrated power delivery solutions from grid to core for AI data centers.
The transaction will also expand Infineon’s engineering capabilities in India. C2i’s team will become part of Infineon’s global R&D network, with the acquisition supporting the creation of a center of excellence for digital power technologies in the country.
Infineon currently employs approximately 2,800 people in India. The acquisition adds specialized digital power and system architecture expertise to its existing engineering presence as the company expands development activities for AI data center power systems.
Original – Infineon Technologies
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Coherent has begun sampling 300mm high-thermal-conductivity silicon carbide (SiC) substrates to leading AI semiconductor partners, moving the technology from internal development into customer evaluation for AI and high-performance computing applications.
The substrates are designed to address increasing thermal-management requirements as AI processors move toward higher power densities. Coherent is targeting the material for next-generation heat spreaders and related semiconductor packaging applications where heat removal can affect processor performance, reliability and data center efficiency.
According to Coherent, its high-thermal-conductivity SiC substrates can improve heat spreading by up to 25% compared with current solutions while maintaining compatibility with existing semiconductor manufacturing platforms.
SiC combines high thermal conductivity with mechanical strength and thermal stability, characteristics that make it suitable for thermal-management applications around high-power semiconductor devices. In this application, the material is being positioned primarily as a thermal-management substrate rather than as an active power semiconductor.
Coherent has vertically integrated capabilities covering SiC crystal growth, wafering, polishing and characterization. The company said this provides greater control across the manufacturing process and supports its plans to scale the 300mm platform toward future high-volume production.
Customer sampling represents the next stage of Coherent’s 300mm SiC development roadmap. The company plans to continue expanding the platform for AI and HPC applications as semiconductor manufacturers evaluate new materials for managing the increasing heat generated by next-generation processors.
Original – Coherent
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Wolfspeed reported approximately $150 million in consolidated revenue for the fourth quarter of fiscal 2026, in line with the midpoint of its guidance, while continued growth in AI data center applications provided a bright spot against still-challenging profitability.
AI data center revenue more than doubled year-over-year during fiscal 2026 and increased approximately 20% sequentially in the fourth quarter. Wolfspeed characterized AI data centers as a moderate but growing opportunity and has established a dedicated data center solutions team in Silicon Valley to accelerate penetration of the market.
The company is also expanding its engagement with AI power infrastructure customers. During the quarter, Wolfspeed highlighted its strategic collaboration with LITEON Technology, where its SiC technology has been qualified for 800VDC power sidecar and compute-rack power supply platforms targeting next-generation AI data centers.
Technology development remained another major focus. Wolfspeed launched its fifth-generation SiC MOSFET platform, representing the latest step in its device roadmap. Its 10kV SiC MOSFET was also named a “Top Innovation” at the 2026 Power Conversion and Intelligent Motion conference, while the company announced a memorandum of understanding with GE Aerospace.
Financial performance, however, remains under significant pressure. GAAP gross margin was negative 25% in Q4, while non-GAAP gross margin was negative 20%. Wolfspeed recorded a GAAP net loss of $145 million and adjusted EBITDA of negative $62 million, with operating cash flow of negative $54 million.
Liquidity remained substantial at the end of the quarter, with $1.1 billion in cash, cash equivalents and short-term investments as of June 28, 2026. Management continues to focus on reducing debt and its cost of capital. During Q4, holders of $46 million of convertible notes voluntarily converted their debt into equity, further modifying the company’s capital structure.
For the first quarter of fiscal 2027, Wolfspeed expects revenue between $140 million and $160 million, putting the midpoint at approximately $150 million and implying broadly flat sequential revenue. Non-GAAP gross margin is expected to remain negative, while non-GAAP operating expenses are forecast between $62 million and $66 million.
Original – Wolfspeed
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JEDEC Solid State Technology Association will host its Automotive Electronics Forum on September 17, 2026, in Santa Clara, California, bringing together automakers, semiconductor suppliers and technology companies to discuss emerging requirements for automotive electronics and memory.
The event will focus on some of the major technology shifts reshaping vehicle electronics, including advanced driver-assistance systems (ADAS), artificial intelligence, autonomous driving and evolving automotive use models. The program is particularly focused on how these trends are changing memory architectures, interfaces and semiconductor requirements within increasingly software- and compute-intensive vehicles.
Automotive participation will include Ford Motor Company, General Motors and Rivian, alongside autonomous-driving technology company Waymo. Semiconductor and test-industry participants include Infineon, Keysight, Kioxia, Micron, Monolithic Power Systems, NXP, Samsung, SK hynix and Texas Instruments, giving the forum representation across memory, power management, automotive processing and semiconductor validation.
AI and physical AI are prominent themes in the technical agenda. Scheduled presentations include discussions around automotive edge AI as a driver of memory innovation, memory roadmaps for advanced autonomy and physical AI, and new approaches to memory die and interface transitions.
The forum reflects the growing semiconductor content and architectural complexity of next-generation vehicles. Increasing adoption of centralized and zonal computing, ADAS and AI workloads is driving higher requirements for memory bandwidth, capacity, reliability and data movement while simultaneously increasing vehicle power-management requirements.
JEDEC Chairman Mian Quddus said the organization sees the forum as an opportunity to give industry professionals greater visibility into the future direction of automotive memory standards. Advance registration is required, with attendance limited for the September event.
Original – JEDEC
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ROHM will exhibit semiconductor technologies and reference designs for mobility and industrial applications at electronica India 2026, taking place from September 16 to 18 at the Bangalore International Exhibition Centre in India.
The company will focus on application-oriented demonstrations incorporating its power and analog semiconductor technologies. Key exhibits will include a three-wheeled electric vehicle concept and reference designs for AI server power supplies, EV chargers and photovoltaic inverters.
For mobility applications, ROHM will demonstrate a three-wheeled EV concept integrating its semiconductor devices and reference designs for motor control, smart instrument clusters and vehicle lighting. Additional exhibits will include engine-control ICs and LED driver ICs for two-wheeled vehicles, as well as sonar demonstrations for automotive applications.
ROHM’s industrial exhibits will include 1.3kW and 5.5kW reference designs for AI server power supplies. The company will also demonstrate reference designs for power conversion in EV charging equipment and photovoltaic inverters.
Other technologies on display will include sub-GHz wireless communication LSIs, chiplet-based microcontrollers and applications for Solist-AI, ROHM’s edge-computing AI solution.
ROHM said the demonstrations are intended to support technical discussions with customers and partners around power conversion, energy efficiency and system design. The company will exhibit at booth I-15 in Hall 3.
Original – ROHM
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Analog Devices (ADI) reported fiscal third-quarter 2026 revenue of $4.02 billion, with year-over-year growth led by its Data Center and Industrial businesses as strengthening demand across products and regions supported the company’s performance.
Management said results exceeded the midpoint of ADI’s revenue, margin and earnings outlook. CEO Vincent Roche attributed the performance to broad-based demand as well as the company’s combination of product innovation, customer relationships and manufacturing flexibility, with AI-related opportunities becoming an increasingly important part of its growth strategy.
Data Center was one of the principal growth drivers during the quarter, highlighting ADI’s exposure to expanding AI and high-performance computing infrastructure. While ADI is primarily associated with analog and mixed-signal semiconductors rather than discrete power devices, its portfolio plays an important role in power management, monitoring, signal processing and connectivity across increasingly power-intensive data-center architectures.
Cash generation remained particularly strong. On a trailing 12-month basis, ADI generated $5.5 billion in operating cash flow and $4.9 billion in free cash flow, equivalent to approximately 40% and 36% of revenue, respectively. During the third quarter alone, the company returned $1.7 billion to shareholders through dividends and share repurchases.
Management indicated that demand strengthened across both the product portfolio and geographic regions during Q3. CFO Richard Puccio said this momentum is reflected in what the company described as a record fourth-quarter outlook and is expected to provide momentum entering fiscal 2027.
For fiscal Q4 2026, ADI forecasts revenue of $4.3 billion, plus or minus $100 million. At the midpoint, this would represent sequential growth of approximately 7% from Q3. Reported operating margin is expected to be approximately 42.6%, plus or minus 150 basis points, while adjusted operating margin is forecast at approximately 52.0%, plus or minus 100 basis points.
Original – Analog Devices
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GaN / LATEST NEWS / PRODUCT & TECHNOLOGY / WBGEPC Space Launches Radiation-Hardened GaN Transistors for AI and High-Performance Computing in Space
August 18, 2026
2 Min ReadEPC Space has introduced three radiation-hardened eGaN power transistors targeting the growing power requirements of next-generation space computing platforms, including AI processors, GPUs and high-performance system-on-chip architectures.
The new EPC7050PCSH, EPC7066PCSH and EPC7065PCSH combine high current capability with very low on-resistance in compact plastic PQFN surface-mount packages featuring backside thermal pads. All three devices are rated for 101 A continuous current, while covering voltage classes of 15 V, 25 V and 40 V.
The 15 V EPC7050PCSH provides typical RDS(on) of 0.28 mΩ, while the 25 V EPC7066PCSH offers 0.37 mΩ. The 40 V EPC7065PCSH has typical RDS(on) of 0.5 mΩ. The devices also feature zero reverse-recovery charge, supporting lower switching losses and higher-frequency operation compared with conventional silicon power devices.
Radiation performance is a central feature of the new family. EPC Space specifies total ionizing dose immunity above 1 Mrad, single-event-effect tolerance to LET(Si) of 85 MeV·cm²/mg and neutron tolerance exceeding 4 × 10¹⁵ n/cm². This combination is intended to provide the radiation robustness required for demanding orbital computing and power-conversion systems.
The devices are optimized for synchronous rectification on the secondary side of intermediate bus converters producing 5 V to 12 V outputs. EPC Space highlights their low RDS(on) × QG figure of merit as an enabler for higher switching frequencies, increased conversion efficiency and greater power density.
The transistors also target voltage regulator modules, intermediate voltage regulators and point-of-load buck converters supplying processor core voltages around 0.8 V. EPC Space specifically identifies space computing platforms based on devices such as Versal SoCs and NVIDIA GPUs as potential applications.
Original – EPC Space
