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Wolfspeed announced the commercial availability of the industry’s first 10 kV silicon carbide power MOSFET, a development aimed at advancing high-voltage power conversion for grid infrastructure, industrial electrification, and AI data center applications.
The new device introduces silicon carbide capability at the 10 kV level, enabling new system architectures for high-voltage power electronics. According to the company, the technology supports improvements in system efficiency, reliability, and design flexibility for applications such as solid-state transformers, wind power systems, and medium-voltage uninterruptible power supplies.
The device also demonstrates high durability. Intrinsic time-dependent dielectric breakdown lifetime analysis indicates a projected operating lifetime of approximately 158,000 years at a continuous 20 V gate bias voltage. Wolfspeed stated that the technology also addresses bipolar degradation challenges that have historically affected 10 kV SiC MOSFETs, enabling reliable body diode operation required in many high-power systems.
The availability of 10 kV silicon carbide devices allows designers to simplify system architectures and reduce component counts. According to Wolfspeed, systems using the technology can reduce overall system cost by about 30% by enabling simpler inverter topologies and fewer power conversion stages. Power density improvements exceeding 300% are possible through higher switching frequencies, increasing from about 600 Hz to 10,000 Hz, which allows smaller magnetics and simplified gate drive and control circuits. The technology can also reduce system-level thermal requirements by up to 50% due to conversion efficiencies approaching 99%.
The fast switching capability of the device, with rise times below 10 nanoseconds, also enables solid-state switching solutions to replace conventional mechanical spark-gap switches in pulsed-power systems. These solid-state devices eliminate arcing, improve timing precision, and reduce maintenance requirements. Potential applications include geothermal power systems, semiconductor plasma etching, pulsed power for AI data centers, and sustainable fertilizer production.
The device, designated CPM3-10000-0300A, is currently available as a bare die for customer sampling and qualification. Wolfspeed stated that the commercialization of the 10 kV SiC MOSFET builds on nearly three decades of development in crystal growth, epitaxy, and high-voltage device manufacturing and enables customers to move prototype designs at this voltage level into production.
Original – Wolfspeed
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Magnachip Semiconductor Corporation reported financial results for the fourth quarter and full year 2025, highlighting continued progress in its strategic shift toward power semiconductors.
For the fourth quarter, consolidated revenue from continuing operations, which includes the Power Analog Solutions and Power IC businesses, reached $40.6 million, near the midpoint of the company’s guidance range of $38.5 million to $42.5 million. Consolidated gross profit margin from continuing operations was 9.3%, slightly above the midpoint of the projected 8.0% to 10.0% range.
Product revenue in the communications segment increased 24% sequentially and grew 68% compared with the same quarter a year earlier.
During the fourth quarter, Magnachip launched 24 new-generation products. Across the full year 2025, the company introduced 55 new-generation products, a significant increase compared with four launches in 2024.
The company also signed a strategic agreement with Hyundai Mobis to expand its industrial business through jointly developed IGBT technology.
Magnachip implemented several cost-reduction initiatives during the year, including operating expense optimization and a workforce reduction program. These measures are expected to generate more than $2 million in annualized savings starting in the fourth quarter of 2025.
In addition, the company invested $21.4 million in upgrading its Gumi fabrication facility during 2025, with $17.0 million of the investment financed through equipment loans.
According to CEO Camillo Martino, Magnachip has taken structural steps to simplify its business, reduce costs, and sharpen its focus on power semiconductor markets. The company aims to strengthen its competitiveness, improve margins over time, and position itself for a more consistent recovery despite challenging near-term market conditions.
Original – Magnachip Semiconductor
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Dynex Semiconductor will present new research from its R&D team at the International Conference on Integrated Power Electronics Systems (CIPS) 2026 in Dresden, Germany, highlighting advances in power module reliability, packaging technology, and predictive health monitoring for high-power electronic systems.
Two Dynex researchers will present technical papers addressing challenges that are increasingly important for next-generation applications in renewable energy, transportation, and industrial power systems.
Research presented by Dynex focuses on improving power module reliability through innovative interconnection technologies. The study investigates alternatives to conventional aluminium wire bond interconnections, which are widely used in power modules but can suffer from thermo-mechanical fatigue during repeated power cycling.
The work explores clip-based die-top interconnections made from copper and copper-molybdenum-copper materials with a low coefficient of thermal expansion. These materials help reduce thermal stress and improve current distribution across the semiconductor device.
Testing results showed significant improvements in reliability. The copper-molybdenum-copper clip approach achieved up to 10.9× longer power cycling lifetime compared with traditional wire bonding using SAC305 solder, and up to 15.4× improvement when combined with high-temperature lead-free die-attach solder.
Researchers also addressed a common challenge in power module packaging: improving die-top interconnection reliability can increase stress in the die-attach layer beneath the device. By combining the copper-molybdenum-copper clip interconnection with high-temperature lead-free solder for die attachment, the team was able to manage both reliability mechanisms effectively.
Detailed failure analysis using scanning acoustic microscopy, scanning electron microscopy, and optical microscopy confirmed stable electrical performance with minimal degradation of device characteristics during testing. The work represents more than four years of research and development and has resulted in a patent filing.
Dynex also presented developments in predictive health monitoring for power electronics. Using an online failure precursor data acquisition system, the proposed prognostic model can support predictive maintenance strategies, early failure warnings, remaining useful lifetime prediction, and monitoring of IGBT health degradation.
According to Dynex, these technologies represent an important step toward more resilient and reliable power electronic systems supporting renewable energy and other advanced electrification applications.
Original – Dynex Semiconductor
