Wolfspeed announced the commercial availability of the industry’s first 10 kV silicon carbide power MOSFET, a development aimed at advancing high-voltage power conversion for grid infrastructure, industrial electrification, and AI data center applications.
The new device introduces silicon carbide capability at the 10 kV level, enabling new system architectures for high-voltage power electronics. According to the company, the technology supports improvements in system efficiency, reliability, and design flexibility for applications such as solid-state transformers, wind power systems, and medium-voltage uninterruptible power supplies.
The device also demonstrates high durability. Intrinsic time-dependent dielectric breakdown lifetime analysis indicates a projected operating lifetime of approximately 158,000 years at a continuous 20 V gate bias voltage. Wolfspeed stated that the technology also addresses bipolar degradation challenges that have historically affected 10 kV SiC MOSFETs, enabling reliable body diode operation required in many high-power systems.
The availability of 10 kV silicon carbide devices allows designers to simplify system architectures and reduce component counts. According to Wolfspeed, systems using the technology can reduce overall system cost by about 30% by enabling simpler inverter topologies and fewer power conversion stages. Power density improvements exceeding 300% are possible through higher switching frequencies, increasing from about 600 Hz to 10,000 Hz, which allows smaller magnetics and simplified gate drive and control circuits. The technology can also reduce system-level thermal requirements by up to 50% due to conversion efficiencies approaching 99%.
The fast switching capability of the device, with rise times below 10 nanoseconds, also enables solid-state switching solutions to replace conventional mechanical spark-gap switches in pulsed-power systems. These solid-state devices eliminate arcing, improve timing precision, and reduce maintenance requirements. Potential applications include geothermal power systems, semiconductor plasma etching, pulsed power for AI data centers, and sustainable fertilizer production.
The device, designated CPM3-10000-0300A, is currently available as a bare die for customer sampling and qualification. Wolfspeed stated that the commercialization of the 10 kV SiC MOSFET builds on nearly three decades of development in crystal growth, epitaxy, and high-voltage device manufacturing and enables customers to move prototype designs at this voltage level into production.
Original – Wolfspeed