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Power Integrations released the world’s highest-voltage, single-switch gallium-nitride (GaN) power supply IC, featuring a 1250-volt PowiGaN™ switch. InnoSwitch™3-EP 1250 V ICs are the newest members of Power Integrations’ InnoSwitch family of off-line CV/CC QR flyback switcher ICs, which feature synchronous rectification, FluxLink™ safety-isolated feedback and an array of switch options: 725 V silicon, 1700 V silicon carbide, and PowiGaN in 750 V, 900 V and now 1250 V varieties.
The switching losses for Power Integrations’ proprietary 1250 V PowiGaN technology are less than a third of that seen in equivalent silicon devices at the same voltage. This results in power conversion efficiency as high as 93 percent – enabling highly compact flyback power supplies that can deliver up to 85 W without a heatsink.
Radu Barsan, vice president of technology at Power Integrations, said: “Power Integrations continues to advance the state of the art in high-voltage GaN technology development and commercial deployment, rendering even the best high-voltage silicon MOSFETs obsolete along the way. We were first to market with high-volume shipments of GaN-based power-supply ICs in 2019, and earlier this year introduced a 900-volt version of our GaN-based InnoSwitch products.
Our ongoing development of higher voltage GaN technology, illustrated here by our new 1250 V devices, extends the efficiency benefits of GaN to an even wider range of applications, including many currently served by silicon-carbide technology.”
Designers using the new InnoSwitch3-EP 1250 V ICs can confidently specify an operating peak voltage of 1000 V, which allows for industry-standard 80 percent de-rating from the 1250 V absolute maximum. This provides significant headroom for industrial applications and is particularly valuable in challenging power grid environments where robustness is an essential defense against grid instability, surge and other power perturbations.
Original – Power Integrations
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Heikki Holmberg, Okmetic’s Senior Technology Development Manager, has been selected as Aalto University School of Electrical Engineering’s Alumnus of the Year 2023. Heikki graduated as a Master of Science (Technology) at the Electrical Department of the Helsinki University of Technology, the predecessor of Aalto University, in 2002. He defended his doctoral dissertation in 2008. The Alumnus of the Year award was presented to Heikki on Saturday 28.10.2023 at the Aalto Alumni Weekend seminar in Otaniemi.
Personnel, alumnus and students at Aalto University School of Electrical Engineering were able to propose the alumnus of the year during the spring and summer. The management team considered in their discussion Heikki’s great cooperation with the school and his role in bringing the semiconductor industry to the fore to be significant for the selection.
“Heikki Holmberg knows the importance of cooperation between companies and the university, and he has coordinated the cooperation with our school in the Semi-Summer 2023 program and in highlighting the semiconductor industry in general. His work in his field is a great example for our students who are choosing their own study and career paths’, says Jussi Ryynänen, Dean of the Aalto University School of Electrical Engineering.
Heikki’s interest in the semiconductor industry was sparked already in the early days of his studies, and at the latest after the Basics of Semiconductor Industry course, it was clear that his future would lie in the field. Heikki describes the field as interesting, international and cross-disciplinary. The field combines materials physics, electro physics and chemistry. “The semiconductor industry is the industry of the future.” Heikki sums up.
Heikki has networked with other companies operating in the semiconductor industry in Finland and is an active member of several cooperation forums. “It is important that we cooperate with different companies in Finland to develop and advance the semiconductor industry. In this way, we will also be stronger at EU level.
Okmetic has worked closely with Murata, Vaisala, Picosun and Kyocera for several years.” Heikki says. “Finland will need a significant number of new experts in the future, which is why cooperation with educational institutions is also important. The sector currently employs approximately 5,000 people in Finland, but the goal is to employ 20,000 people by 2032.” Heikki continues.
Heikki has also brought a lot of technological know-how and semiconductor industry experience to Okmetic. He himself says that his most significant achievements are projects related to the expansion of the patterning line and the development and launch of a new product (UF-RFSi™, Ultra Flat Radio Frequency Silicon Wafer), as well as the fact that most of the applications for EU support for various projects have received a positive decision.
“Heikki’s expertise and energy have enabled Okmetic to react effectively to big opportunities and the challenges they contain. For this, a big thank you to Heikki and warm congratulations on a significant achievement on behalf of the entire Okmetic,” says Atte Haapalinna, CTO of Okmetic.
Original – Okmetic
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Wolfspeed, Inc. announced its results for the first quarter of fiscal 2024.
Quarterly Financial Highlights (Continuing operations only. All comparisons are to the first quarter of fiscal 2023)
- Consolidated revenue of $197.4 million, compared to $189.4 million
◦ Mohawk Valley Fab contributed $4.0 million in revenue
- Device design-ins of $2.2 billion and quarterly record of over $1 billion in device design-wins
- GAAP gross margin of 12.5%, compared to 35.7%
- Non-GAAP gross margin of 15.6%, compared to 38.8%
◦ GAAP and non-GAAP gross margins for the first quarter of fiscal 2024 include the impact of $34.4 million of underutilization costs, representing approximately 1,740 basis points of gross margin.
“We kicked off our fiscal year with a strong quarter in both execution and market share. Not only have we continued to win in the marketplace, as evidenced by our third highest quarter of design-ins and a record quarter of design-wins, we have clear focus on the ramp of our Mohawk Valley Fab,” said Wolfspeed CEO, Gregg Lowe. “At Mohawk Valley, we have an outstanding operations team in place, Building 10 on our Durham campus is producing enough 200mm wafers ahead of the needs of Mohawk Valley, and we already have enough qualified product to satisfy our 20 percent utilization goals.”
Lowe continued, “We remain steadfast in our long-term vision for the future of this industry. The market opportunity for silicon carbide stands at $6 billion today, up from $400 million just five years ago. This further validates our strategy to invest now to capitalize on the immense opportunities at-hand, and the significant opportunity in the future.
We have amassed significant materials expertise over the decades, which combined with the capacity of our new materials factory in Siler City, will increase our wafer production by 10x when fully operational, and creates significant competitive advantages over our peers and new entrants. We will be better positioned to support our customers’ needs going forward and cater to a whole host of new applications for silicon carbide technology.
As the only pure-play silicon carbide company in the market today, we believe that we are best positioned to capitalize on a decades long tailwind that represents a $20 billion addressable market by 2030.”
As previously announced, on August 22, 2023, Wolfspeed entered into a definitive agreement to sell its RF product line to MACOM Technology Solutions Holdings, Inc. (MACOM) for approximately $75 million in cash, subject to a customary purchase price adjustment, and 711,528 shares of MACOM common stock, valued at $50 million based on the 30 trading day trailing average closing price for MACOM’s common stock through August 21, 2023. Wolfspeed expects to close the transaction by the end of calendar 2023.
Original – Wolfspeed
- Consolidated revenue of $197.4 million, compared to $189.4 million
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High surge currents have met their match in our 2200V rectifier, GP12022. This high-voltage standard recovery rectifier is designed for demanding industrial applications and harsh conditions.
With impressive features, including a forward current capability of 120A and a low forward voltage of 1.2V, this component maximizes efficiency in power conversion while minimizing energy losses.
MCC’s rectifier utilizes the compact yet powerful TO-264P package with a high creepage 2-pin design to ensure safety and reliability. Thermal performance and efficiency are built in, with the ability to easily be mounted on a heatsink for optimal heat dissipation and streamlined installation.
All these features add up to superior operation you can count on in harsh environments. But GP12022 is actually eco-friendly thanks to RoHS compliance, a lead-free finish, and halogen-free design.
Level up your high-voltage industrial designs with the MCC’s 2200V standard recovery rectifier.
Features & Benefits:
- High forward surge current capability excels in demanding conditions
- Low forward voltage minimizes energy losses
- High creepage 2-pin TO-264P package enhances safety
- Ideal for high-temp applications
- Easy mounting to heatsink for faster installation
- Excellent thermal properties
- Halogen-free with lead-free finish
- RoHS compliant
Original – Micro Commercial Components
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Magnachip Semiconductor Corporation announced that the Company released its 6th-generation 600V Super Junction Metal Oxide Semiconductor Field Effect Transistor (SJ MOSFET) enhanced with microfabrication technology.
This 6th-generation 600V SJ MOSFET (MMD60R175S6ZRH) was built on the 180nm microfabrication process and Magnachip’s latest design technology. This sophisticated technology improves upon the previous generation of SJ MOSFETs by narrowing the cell-pitches by 50% and lowering the RDS(on) (On resistance: the resistance value between the drain and the source of MOSFETs during on-state operation) by 42%. As a result, this product comes in the same Decawatt Package (DPAK), while offering the low RDS(on) of 175mΩ and outstanding power density.
Furthermore, the total gate charge is lowered by approximately 29% compared to the previous generation, resulting in reduced switching loss and enhanced power efficiency. The power efficiency is in fact one of the key features of this product, as it gives product designers flexibility with regards to various applications. In addition, a Zener diode is embedded between the gate and the source to strengthen the ruggedness and reliability of the MOSFET in an application and prevent it from sustaining damage caused by external surges or electrostatic discharges.
With its high efficiency, flexible design and reliability, this new 600V SJ MOSFET can be used in a wide range of applications, such as servers, OLED TVs and laptop fast chargers. Omdia, a global market research firm, estimates that worldwide server shipments will grow by 8% annually from 2023 to 2027, while global OLED TV shipments will increase 11% every year, reaching a total of 9.3 million units in 2027.
“Following the launch of this MOSFET, Magnachip plans to unveil additional 6th-generation SJ MOSFETs, including those with a fast recovery body diode, in 2024,” said YJ Kim, CEO of Magnachip. “Aligned with customer demand, our technical innovation will further strengthen our industry presence and global market penetration.”
Original – Magnachip Semiconductor
