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ORC Manufacturing Co., Ltd. and Resonac Corporation announced that ORC Manufacturing has taken part in the “JOINT2 (Jisso Open Innovation Network of Tops 2)” consortium, which was established under the leadership of Resonac with the aim of developing next-generation semiconductor packaging technologies. As a result, JOINT2 has become a consortium comprised of 13 leading companies in Japan who manufacture semiconductor packaging materials, substrates, and equipment.
As a consortium which has end-to-end testing line of leading-edge technologies covering back-end processes of semiconductor package manufacturing, JOINT2 will accelerate development of technologies for evaluation and manufacturing of next-generation semiconductor packages.
JOINT2 was established in 2021 as a consortium of 12 companies with the aim of establishing next generation semiconductor packaging technologies and evaluation technologies, including 2.5D and 3D packaging through collaboration among member companies. JOINT2 is the successor of “JOINT” consortium, which was established in 2018.
The combination of the member companies’ materials and equipment allows materials and equipment to be evaluated under conditions similar to the semiconductor evaluation tests conducted by customers. This arrangement helps customers save the time and trouble of carrying out individual evaluations for their suppliers and thereby respond to the need of speedy development of semiconductor packages.
Technologies for “back-end processes” of semiconductor-integrated-circuit manufacturing, where semiconductor chips are packaged, are now required to evolve into next-generation technologies that can support 5G and post-5G high-speed data communication systems. Back-end processes consist of many processes, and consume various materials.
Therefore, back-end processes have many technical issues to be solved, and solutions for these issues require collaboration among many companies. Therefore, Japanese manufacturers have large shares in the field of back-end processes of semiconductor package manufacturing because they are good at comparing and adjusting technologies.
ORC Manufacturing is an equipment manufacturer which has forte in optical technologies, and its key product is direct imaging (Dl) system for production of high-density semiconductor packaging substrates. ORC Manufacturing is now developing next-generation Dl system for back-end processes of semiconductor packaging as a part of the project adopted by the New Energy and Industrial Technology Development Organization (NEDO).
ORC Manufacturing’s participation in JOINT2 reinforces the consortium’s end-to-end testing line of leading-edge back-end process technologies. ORC Manufacturing’s Dl system, which does not require photo-mask preparation, is expected to shorten time-to-market of semiconductor packages, and accelerate technological innovations in back-end processes of semiconductor packaging.
Through its participation in JOINT2, ORC Manufacturing aims to acquire wide-ranging knowledge about back-end processes of semiconductor packaging including process evaluation technologies applicable to pre-imaging through post-imaging, thereby strengthen its capability to offer values to customers.
JOINT2 welcomes the new member, and will further promote open innovation and accelerate the development of more sophisticated evaluation technologies, materials, substrates, and equipment applicable to next-generation semiconductor packaging technologies.
Original – Resonac
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Bourns, Inc. announced its first 650 V – 1200 V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs). The Bourns® SiC SBD line consists of six models engineered to provide excellent current carrying and thermal capabilities and high power density for increased performance and reliability. These capabilities make Bourns® SiC SBDs optimal high efficiency power conversion solutions for the growing variety of high frequency applications that need to meet reduced size and lower system cost requirements.
Telecom/Server Switched-Mode Power Supplies (SMPS), photovoltaic inverters, PC power and motor drives are a few of the applications that can benefit from the features provided in the Bourns® BSD Series SiC SBDs.
To address ongoing design demands for ever higher power efficiency, Bourns® SiC SBDs feature low forward voltage (VF) and high thermal conductivity, which increases efficiency while lowering power dissipation, satisfying application requirements of 650 V and 1200 V solutions.
The series also has no reverse recovery current to reduce EMI, enabling these SiC SBDs to significantly lower energy losses. In addition to offering 650 V to 1200 V operation with currents in the 6-10 A range, the six new BSD models of wide band gap diodes from Bourns offer designers various forward voltage, current and package options including TO220-2, TO247-3, TO252, and DFN8x8.
The six Bourns® Model BSD SiC SBDs are available now. These models are RoHS compliant, halogen free, Pb free and their epoxy potting compound is flame retardant to the UL 94V-0 standard.
For more detailed product information, please see: www.bourns.com/products/diodes/silicon-carbide-sic-schottky-barrier-diodes
Original – Bourns
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Diodes Incorporated announced a further enhancement of its wide-bandgap product offering with the release of the DMWSH120H90SM4Q and DMWSH120H28SM4Q automotive-compliant Silicon Carbide (SiC) MOSFETs. These N-channel MOSFETs respond to the increasing market demand for SiC solutions that enable better efficiency and higher power density in electric and hybrid-electric vehicle (EV/HEV) automotive subsystems like battery chargers, on-board chargers (OBC), high-efficiency DC-DC converters, motor drivers, and traction inverters.
The DMWSH120H90SM4Q operates safely and reliably up to 1200VDS with a gate-source voltage (Vgs) of +15/-4V and has an RDS(ON) of 75mΩ (typical) at 15Vgs. This device is designed for OBCs, automotive motor drivers, DC-DC converters in EV/HEV, and battery charging systems.
The DMWSH120H28SM4Q operates at up to 1200VDS, +15/-4Vgs, and has a lower RDS(ON) of 20 mΩ (typical) at 15Vgs. This MOSFET has been designed for motor drivers, EV traction inverters, and DC-DC converters in other EV/HEV subsystems. Low RDS(ON) enables these MOSFETs to run cooler in applications that require high power density.
Both products have low thermal conductivity (RθJC=0.6°C/W), enabling drain currents up to 40A in the DMWSH120H90SM4Q and 100A in the DMWSH120H28SM4Q. They also have fast intrinsic and robust body diodes with low reverse recovery charge (Qrr) of 108.52nC in the DMWSH120H90SM4Q and 317.93nC in the DMWSH120H28SM4Q. This enables them to perform fast switching with reduced power losses.
By using the planar manufacturing process, Diodes has created new MOSFETs that offer more robust and reliable performance in automotive applications—and with increased drain current, breakdown voltage, junction temperature, and power rings as compared to previously released versions. The devices are available in a TO247-4 (Type WH) package, which offers an additional Kelvin sense pin. This can be connected to the source to optimize switching performance, enabling even higher power densities.
Original – Diodes Incorporated
