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VisIC Technologies announced the successful second closing of its Round B funding, securing $26 million to advance GaN power semiconductor technology for electric vehicles. The round was led by a global semiconductor leader, with Hyundai Motor Company and Kia joining as a strategic investor. The milestone strengthens VisIC’s position in high-performance GaN power devices for automotive traction inverters and next-generation mobility.
The global EV market is pushing for higher efficiency, longer driving range, and more sustainable power electronics. Traditional silicon is reaching its limits, and while SiC offers performance advantages, cost remains a barrier for mass adoption. VisIC’s D³GaN™ platform targets both 400 V and 800 V EV architectures, enabling lighter, smaller, and more energy-efficient traction inverters with scalability and reliability.
The new funding will accelerate key programs:
- Optimization, qualification, and release of Gen3 750 V GaN dice and power modules
- Development of Gen4 1350 V GaN technology to cover the full spectrum of EV designs
- Supply-chain stabilization and ramp-up of GaN deliveries for traction inverters
- Expansion of GaN solutions for emerging 800 V data-center power applications
“This investment marks a major milestone for VisIC and the global EV industry. Our D³GaN technology is redefining power electronics for electric vehicles, and the support of our strategic partners accelerates our mission to deliver high-efficiency, scalable solutions for the next generation of mobility,” said Tamara Baksht, CEO of VisIC Technologies.
“Hyundai Motor Company and Kia are committed to advancing sustainable mobility. Partnering with VisIC enables us to integrate cutting-edge GaN technologies into our EV platforms, enhancing efficiency, reliability, and performance as we shape the future of electric transportation,” said Hyundai Motor Company and Kia.
Original – VisIC Technologies
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VisIC Technologies continues to push the boundaries of efficiency and performance in electric mobility and industrial power markets. With the introduction of its first-generation (Gen 1) D³GaN™ 650V devices, followed by Gen 1+, and now second-generation (Gen 2) products, VisIC has created a clear roadmap for achieving maximum energy efficiency through optimized RDS(ON) performance.
Gen 1 – Proven Efficiency
VisIC’s Gen 1 devices established the foundation for GaN adoption in automotive and industrial applications. With RDS(ON) values ranging from 22 mΩ to 8 mΩ, Gen 1 products delivered significant switching speed and efficiency over silicon-based solutions. These devices proved the superior potential of GaN for compact, high-power systems and were the first step toward mass-market adoption.
Gen 1+ – Optimized Performance
To meet growing market demands for higher efficiency, VisIC introduced Gen 1+ devices. By reducing RDS(ON) to as low as 6 mΩ, The 650V Gen 1+ improved conduction losses without compromising switching energy and enabled more power-dense, reliable designs. This generation bridged the gap between the early adoption of GaN and the high-volume needs of automotive OEMs, offering engineers an enhanced balance of efficiency, scalability, and manufacturability. With 98 mm.sq., the GaN bare dice V06DI065R1X13 is one of the biggest dies in the industry to deliver at 650V a current of 170A per device and which makes it ideal to be paralleled inside power modules and deliver power from 50 kW to 150 kW.Beyond automotive, such performance directly addresses the surging demand for efficient power delivery in AI-driven data center, where massive computing loads require compact, high-efficiency solutions. As a stand-alone GaN die, it provides the power density needed to meet the energy thirst of modern, AI-populated data center while reducing losses and optimizing thermal performance.
Gen 2 – Next-Level Efficiency
VisIC’s 650V Gen 2 devices represent a 33% shrink of die size compared to Gen 1+ and 50% to Gen 1 and is a major leap forward in performance. With RDS(ON) values as low as 4 mΩ, Gen 2 delivers unprecedented conduction efficiency, minimizing power losses and reducing system thermal stress. These D³GaN™ devices are engineered for next-generation EV inverters, on-board chargers, and high-performance power converters, enabling automakers to achieve higher driving ranges, smaller cooling systems, and overall lower system costs. The new high power bare dice V04DI065R2X21 650V/4mOhm can be soldered or sintered on AMB/DBC substrates to increase reliability and performance. With a current capability of 230A the device can be used to increase power density in power modules for EV drive train inverter.Lower RDS(ON) directly translates to higher system efficiency and reduced energy losses. Across its product roadmap, VisIC demonstrates its commitment to continuous improvement—ensuring that each generation of D³GaN™ devices provides measurable benefits in performance, power density, and total cost of ownership. Both products are today available as bare dice for customer evaluation. Single chip top side cooled TC package will be available before end of the year and VisIC is working on a half bridge power module with parallel dice which will come soon.
“From our first-generation devices to our latest Gen 2 GaN, VisIC has consistently focused on one clear goal: enabling the most efficient power electronics for electric vehicles and industrial applications,” said Tamara Baksht, CEO. “By reducing RDS(ON) with each new generation, we help our customers design systems that are not only more efficient but also more compact and cost-effective.”
Original – VisIC Technologies
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VisIC Technologies announced a new partnership aimed at advancing high-efficiency GaN inverter technology for the EV market. This collaboration will provide automotive OEMs with power semiconductors that exceed silicon carbide (SiC) performance, while offering lower costs at device and system level.
In a recent test conducted at AVL’s state-of-the-art facilities in Germany, an inverter based on VisIC’s GaN-on-Silicon D³GaN components proved an outstanding performance. Mounted on AVL’s e-motor test bench and controlled by AVLs SOP eDrive controls algorithm, the system achieved a benchmark efficiency level of 99.67% at 10kHz, stunningly climbing to over 99.8% efficiency at 5kHz — which outperforms comparable SiC inverters by up to 0.5% and is cutting energy losses by more than 60%.
This breakthrough positions the AVL and VisIC partnership as a compelling option for automakers striving to balance high efficiency with affordability in EV design. It is worth noting that VisIC’s GaN-on-Silicon power devices require significantly less energy and therefore CO2 during the chip production process compared to SiC. They can be produced in widespread 200mm and 300mm silicon foundries, which makes scaling production a straightforward process.
“With AVL, we’re making cutting-edge GaN inverter technology accessible for even more electric vehicles, establishing a new benchmark for efficiency and cost-effectiveness in the industry,” said Gregory Bunin, CTO of VisIC Technologies. “Our partnership reflects a shared commitment to driving EV innovation that’s both impactful and accessible, bringing GaN’s unparalleled performance to a broader market.”
“Working with VisICs new GaN power module for high-power systems enables us to offer our customers cutting-edge solutions that are optimally aligned with the requirements of next-generation drive systems. These include, among other things, high power density combined with reduced overall system costs,” added Dr. Thomas Frey, Head of Segment E-Mobility & E-Drive System at AVL Software and Functions GmbH. “Together, we can significantly advance e-mobility and help reduce the carbon footprint.”
Looking ahead, AVL and VisIC plan to expand their GaN-on-Si platform to include 800V GaN power modules, ensuring that their technology remains scalable and adaptable to the needs of the growing BEV market. This collaboration places AVL and VisIC Technologies at the forefront of GaN inverter technology, establishing new standards for energy efficiency and performance across the EV industry.
Original – VisIC Technologies
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VisIC Technologies Ltd. has partnered with Heraeus Electronics and PINK to develop an advanced power module utilizing D3GaN technology. This groundbreaking power module is based on a silicon nitride (Si₃N₄) ceramic substrate, an innovative silver (Ag) sintering process and advanced top side interconnect, promising unprecedented reliability and performance for battery electric vehicles (BEVs).
The collaboration brings together VisIC’s expertise in GaN-based devices, Heraeus Electronics’ cutting-edge packaging materials know-how, and PINK’s state-of-the-art sintering technology. The synergy of these industry leaders has culminated in the development of a power module that is setting new standards for GaN based power modules to revolutionize the EV industry.
VisIC’s D3GaN technology is at the heart of this power module, offering significant improvements in efficiency, thermal management, and power density. This technology leverages the superior electrical properties of gallium nitride to deliver faster switching speeds and higher power handling capabilities compared to traditional silicon-based devices.
The use of a Si₃N₄ metal ceramic substrate is a key innovation in this power module. Si₃N₄ is known for its excellent thermal conductivity, mechanical strength, and reliability under high-temperature conditions. These properties are crucial for the demanding environment of electric vehicle applications, ensuring the power module can withstand the rigors of everyday use while maintaining optimal performance.
The adoption of the silver sintering process by PINK enhances the thermal and electrical conductivity of the module. Silver sintering is a low-temperature bonding process that creates robust and reliable connections between components, improving the module’s overall durability and efficiency. This process is critical for the high reliability required in EV powertrains, where consistent performance is non-negotiable.
The resulting power module is designed to meet the stringent reliability and performance standards of the electric vehicle industry. Its advanced materials and innovative construction techniques ensure it can deliver the high-power density of over 500Arms/650V and efficiency needed for modern BEVs, while also offering long-term reliability and durability at a cost point near silicon devices.
This collaboration marks a significant milestone in the advancement of power electronics for electric vehicles. The integration of VisIC’s D3GaN technology with Heraeus Electronics’ sintering paste and PINK’s Ag and Cu sintering process and flexible sintering equipment sets a new benchmark for power module performance in the EV market. This innovation is expected to drive the adoption of GaN technology in EV applications, paving the way for more efficient, reliable, and sustainable electric transportation solutions.
Tamara Baksht, CEO of VisIC, state: “We are thrilled to work with the leading manufacturer of sintering processes of Heraeus Electronics and PINK and adapt their experience into GaN based power modules to develop the next generation of power module for high volume automotive inverter applications.”
PINK, Andrea Pink, CEO of PINK statement: “We are excited to work with such a future driven company as VisIC together with our long-term partner Heraeus Electronics, supporting the newest product innovation for GaN applications.”
Heraeus Electronics Dr. Michael Jörger, EVP Head of Business Line Power Electronic Materials added: “With our materials, application know-how and engineering services we are glad to work with our partners on speeding up the innovative approach of highly efficient GaN modules for automotive applications.”
Original – VisIC Technologies
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VisIC Technologies announced that the samples of the V22TG D3GAN will be available in the first quarter of 2024. This early availability allows manufacturers to assess and experience the performance and benefits of the package firsthand, aiding in the rapid development of the next generation of systems.
Key Features and Benefits:
1. Advanced Leaded Top-Side Cooled Isolated.
2. Automotive and High Voltage Capability.
3. High Power Density and Low On-Resistance.
4. Versatile and Easy to Implement.Dr. Tamara Baksht, CEO and Co-Founder: “This advanced power package not only offers exceptional performance and reliability but also provides the versatility and ease of implementation required for emerging automotive and industrial applications. We are confident that the V22TG D3GAN will empower manufacturers to accelerate the adoption of electric vehicles.”
Original – VisIC Technologies
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IQE plc, the leading supplier of compound semiconductor wafer products and advanced material solutions to the global semiconductor industry, announced a strategic collaboration with VisIC Technologies, a global leader in the provision of GaN (Gallium Nitride) power solutions to the automotive sector, to develop the highest reliability gallium nitride D-Mode (D-Mode GaN) power products for use in electric vehicles inverters.
IQE and VisIC Technologies will collaborate to develop 200mm (8”) D-Mode GaN power epiwafers that will be developed at IQE’s UK facilities, leveraging IQE’s well-established expertise in GaN technology.
VisIC Technologies, with its ground-breaking D3GaN technology (Direct Drive D-Mode GaN), brings the future of EV inverters into focus. This technology promises to reduce power consumption, increase reliability and enhance performance in electric vehicles. By combining VisIC Technologies’ innovative Power Electronics solutions with IQE’s epitaxy excellence, this partnership aims to accelerate the adoption of GaN-on-Silicon technology in EVs, significantly contributing to the evolution of sustainable transportation.
The collaboration marks another important milestone in IQE’s strategy of diversification into the high-growth Power market, first announced at its 2022 Capital Markets Day. IQE sees significant opportunities in the GaN Power epiwafer market in particular, which is forecast to reach a $632m value by 2027.
Original – VisIC Technologies
