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Vishay Intertechnology, Inc. announced that the company’s facility in Borgaro Torinese, Italy, has been approved for inclusion in “Silicon Valley 8.0 in Piemonte for a Green and Smart Mobility” (SVINBO 8.0), a funded project submitted to the European Union (NGEU) and the Italian government. Funding for the grant will be provided through the NGEU M1C2 – 5.2 program targeting productivity and value chains for microelectronics and semiconductors.
In cooperation with the Polytechnic of Turin, SVINBO 8.0 consists of an investment project aimed at the production of a new family of semiconductors for the EV / HEV market, in addition to an R&D project aimed at developing new diode chips for e-mobility and new power modules. In addition to strengthening production and technology, the inclusion of Vishay in SVINBO 8.0 will have strategic impacts on the microelectronic supply chain, improving competitive positioning in the territory.
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Vishay Intertechnology, Inc. introduced a new Gen 4.5 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHK050N65E slashes on-resistance by 48.2 %, while offering a 65.4 % lower resistance times gate charge, a key figure of merit (FOM) for 650 V MOSFETs used in power conversion applications.
Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high tech equipment. With the SiHK050N65E and other devices in the Gen 4.5 650 V E Series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks.
Typical applications will include servers, edge computing, and super computers; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; telecom SMPS; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.
Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHK050N65E’s low typical on-resistance of 0.048 Ω at 10 V results in a higher power rating for applications > 6 kW. With 50 V of additional breakdown voltage, the 650 V device addresses 200 VAC to 277 VAC input voltages and the Open Compute Project’s Open Rack V3 (ORV3) standards. In addition, the MOSFET offers ultra low gate charge down to 78 nC. The resulting FOM of 3.74 Ω*nC translates into reduced conduction and switching losses to save energy and increase efficiency. This allows the device to address the specific titanium efficiency requirements in server power supplies or reach 96 % peak efficiency.
For improved switching performance in hard-switched topologies such as PFC and two-switch forward designs, the MOSFET released today provides low typical effective output capacitances Co(er) and Co(tr) of 167 pF and 1119 pF, respectively. The device’s resulting resistance times Co(er) FOM is an industry-low 8.0 Ω*pF. The SiHK050N65E is offered in the PowerPAK® 10 x 12 package with a Kelvin connection for reduced gate noise and provides increased dv/dt ruggedness. RoHS-compliant and halogen-free, the MOSFET is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.
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Vishay Intertechnology, Inc. announced that at the Applied Power Electronics Conference and Exposition (APEC) 2025, the company will be showcasing its broad portfolio of passive and semiconductor solutions that address the latest trends in power electronics — from energy harvesting, electric vehicle (EV) powertrains, and battery technologies to high efficiency power conversion for data centers.
Taking center stage in booth 905 will be Vishay’s newly released 1200 V MaxSiC™ series silicon carbide (SiC) MOSFETs, which deliver on-resistances of 45 mΩ, 80 mΩ, and 250 mΩ in standard packages for industrial applications, with custom products also possible. In addition, Vishay will provide a portfolio roadmap for 650 V to 1700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology — enabled through the company’s acquisition of MaxPower Semiconductor, Inc. — which will address market demands in traction inverter, photovoltaic energy storage, on-board charger, and charging station applications.
In booth 419, Vishay will be highlighting high energy PTC and NTC inrush current limiting solutions from the company’s most recent acquisition: Ametherm. They include a PTC matrix capable of withstanding 1500 VDC and 1125 J. Vishay Ametherm products are well-suited to growing industries and applications, such as robotic automation, industrial power supplies and motor drives, power distribution for server and AI cloud computing, LED lighting systems, medical devices, imaging equipment, electric vehicle charging, and alternative energy infrastructure.
At APEC 2025, Vishay will also be offering a variety of product-focused demonstrations highlighting IHLE® series low profile, high current inductors featuring integrated E-field shields; the THJP ThermaWick® Thermal Jumper; the pulse performance of MELF, CRCW / CRCW-HP thick film, and MCS, MCU, and MCW thin film chip resistors; and the thermal capabilities of the PCAN and RCP high power thin and thick film resistors. In addition, automotive-focused application demonstrations will include:
- An intelligent battery shunt built on WSBE Power Metal Strip® resistors, with low TCR and a CAN FD / USB interface for 400 V / 800 V systems
- A 48 V eFuse featuring TrenchFET® MOSFETs designed to handle a continuous current up to 100 A and operate continuously at maximum current with less than 14 W of losses
- A 1 kW, 48 V / 12 V buck-boost converter featuring two module power stages — each rated for 500 W — in a compact form factor
Additional Vishay passive components on display at APEC 2025 will include the IHDM series of high current, edge-wound through hole inductors with continuous operation to +180 °C; hybrid planar and integrated transformers; wireless charging coils; sensing NTC and PTC thermistors, including the PTCEL series capable of handling energy absorption up to 240 J; Power Metal Strip resistors with high power to 9 W and shunts with low TCR down to < ± 10 ppm/°C; high power wirewound, thin film, and thick film resistors, including the anti-surge RCS with power to 0.5 W in the 0805 case size; high frequency thick film resistors with up to 500 000 thermal cycles; high voltage thick film resistors and dividers; high voltage aluminum, ceramic, and power electronic capacitors (PEC); high capacity energy storage capacitors; military-grade, high energy, and hermetically sealed tantalum capacitors; and robust metallized polypropylene film capacitors, including the MKP1848e DC-Link capacitor with high temperature operation to +125 °C.
Highlighted Vishay semiconductor solutions will consist of the SiC967 microBRICK® synchronous buck regulator with integrated power MOSFETs and inductor and a wide input voltage range of 4.5 V to 60 V; scalable microBUCK® voltage regulators that deliver high efficiency; 400 V, 600 V, and 1200 V standard rectifiers in SlimDPAK 2L and SMPD 2L packages with high creepage distance; 650 V and 1200 V SiC Schottky diodes up to 12 A in eSMP® series and power packages for AC/DC power factor correction (PFC) and ultra high frequency output rectification; transient voltage suppressors (TVS); and analog switches in all major configuration types.
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LATEST NEWSVishay Intertechnology to Showcase Cutting-Edge Semiconductor and Passive Solutions at ELECRAMA 2025
February 19, 2025
3 Min ReadVishay Intertechnology, Inc. announced that at ELECRAMA 2025, the company will be exhibiting its broad portfolio of passive and semiconductor solutions that are enabling the future of energy technology. In hall 16, booth B14, Vishay will be showcasing its differentiated products and solutions in a series of demonstrations across a variety of markets, including automotive, transmission and distribution, industrial, renewable energy, and locomotive.
Among the demonstrations and components taking center stage at Vishay’s booth will be:
- A variety of Vishay ESTA power electronic capacitors (PEC) for DC-Link, snubber, and AC filtering applications, together with LVAC power capacitors, box capacitors, and detuned reactors
- A 48 V, 10 kW traction inverter for light electric vehicles
- A 3.6 kW 800 V to 48 V power converter for auxiliary DC/DC power
- A scalable 30 kW DC fast charger
- A 10 kW photovoltaic inverter with MPPT
Other Vishay passive components on display at ELECRAMA 2025 will include inrush current limiters and sensing thermistor solutions from the company’s latest acquisition: Ametherm. Highlighted capacitors will consist of tantalum polymer, metallized polypropylene DC-Link, interference suppression, and ceramic disc safety devices, in addition to EDLC supercapacitors.
Featured resistors will include water cooled, vitreous, and axial cemented leaded wirewound devices; Power Metal Strip® battery shunts; high power and high voltage thick film chip resistors; thin film MELF and thick film power devices; hybrid wirewound resistors for EV applications; custom magnetics; IHLE® high current inductors with e-field shields; and IHPT™ haptic feedback actuators with Immersion licenses.
Highlighted Vishay semiconductor solutions will consist of industrial-grade 650 V and 1200 V Gen 3 silicon carbide (SiC) Schottky diodes and diode modules, 600 V and 1200 V Gen 5 FRED Pt® rectifiers and 1200 V Gen 7 FRED Pt® Hyperfast rectifiers, and also 600 W unidirectional TVS in the DFN3820 package. Optoelectronic solutions on display will include widebody high speed optocouplers and optocouplers with phototransistor output and Schmitt-Trigger functionality; 1 Form A solid-state relays; high reliability, reinforced isolated amplifiers; and ambient light sensors with I²C interfaces.
Vishay will be highlighting 6 A, 8 A, and 60 A eFuses — in addition to an integrated OR-ing switch featuring current sensing — as well as a 50 A VRPower® integrated power stage and 60 A to 100 A smart power stages in MLP packages. The company will also be showcasing its 1200 V MaxSiC SiC MOSFETs, in addition to MOSFETs in the PowerPAK® 10 x 12 and 8 x 8LR packages, and dual PowerPAIR® 6 x 5FS and 3 x 3FS packages.
ELECRAMA 2025 will be taking place February 22-26 in Greater Noida, India. More information on the event is available at https://elecrama.com/.
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Vishay Intertechnology, Inc. announced results for the fiscal fourth quarter and year ended December 31, 2024.
Highlights
- 4Q 2024 revenues of $714.7 million
- 4Q 2024 GAAP loss per share of ($0.49); adjusted EPS of $0.00
- 4Q 2024 book-to-bill of 1.01, with book-to-bill of 0.99 for semiconductors and 1.03 for passive components
- Backlog at quarter end was 4.4 months
- Returned a total of $26.2 million to stockholders in Q4 2024; $105.1 million for the year
- FY 2024 capex of $320.1 million
“Our fourth quarter results came in as expected, slightly below the third quarter. Nevertheless, we saw many promising indicators including a positive book-to-bill for the first time in nine quarters, strong order intake for smart grid infrastructure projects, and initial shipments for A.I. servers,” said Joel Smejkal, President and CEO.
“For 2025, we are well positioned to support a market upturn as capacity, print position, and customer engagements have been key priorities under Vishay 3.0. All of our strategic levers are in play as we continue to execute our five-year plan to position Vishay to take advantage of the megatrends of e-mobility and sustainability.”
For the first quarter of 2025, management expects revenues in the range of $710 million +/- $20 million and a gross profit margin in the range of 19.0% +/- 50 basis points, including the negative impact of approximately of 175-200 basis points related to Newport.
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Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency applications, the Vishay Semiconductors devices offer the best trade-off between capacitive charge (QC) and forward voltage drop for diodes in their class.
The devices consist of 40 A to 240 A dual diode components in a parallel configuration, and 50 A and 90 A single phase bridge devices. Built on state of the art thin wafer technology, the diodes feature a low forward voltage drop down to 1.36 V that dramatically reduces conduction losses for increased efficiency. Further increasing efficiency, the devices offer better reverse recovery parameters than Si-based diodes and have virtually no recovery tail.
Typical applications for the components will include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. In these applications, the diodes’ low QC down to 56 nC allows for high speed switching, while their industry-standard package offers a drop-in replacement for competing solutions.
The diodes deliver high temperature operation to +175 °C and a positive temperature coefficient for easy parallelling. UL-approved to file E78996, the devices feature a large creepage distance between terminals and a simplified mechanical design for rapid assembly.
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To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. introduced a new 150 V TrenchFET® Gen V n-channel power MOSFET in the PowerPAK® SO-8S (QFN 6×5) package.
Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3% and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — by 15.4% while providing 62.5% lower RthJC and 179 % higher continuous drain current.
With the industry’s lowest on-resistance of 5.6 mΩ at 10 V and on-resistance times gate charge FOM of 336 mΩ*nC, the device released today minimizes power losses from conduction. This allows designers to boost efficiency to meet next-generation power supply requirements, such as 6 kW AI server power systems. In addition, the extremely low 0.45 °C/W RthJC of the PowerPAK SO-8S package enables continuous drain current up to 144 A to increase power density while providing robust SOA capability.
The SiRS5700DP is ideal for synchronous rectification, DC/DC converters, hot swap switching, and OR-ing functionality. Typical applications will include servers, edge computing, super computers, and data storage; telecom power supplies; solar inverters; motor drives and power tools; and battery management systems. RoHS-compliant and halogen-free, the MOSFET is 100 % Rg and UIS tested and complies with IPC-9701 criteria for more reliable temperature cycling. The device’s standard 6 mm by 5 mm footprint is fully compatible with the PowerPAK SO-8 package.
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Vishay Intertechnology, Inc. announced that at electronica 2024, the company will be exhibiting its broad portfolio of passive and semiconductor solutions, and discussing their pivotal role in shaping a sustainable future through the all-electric society. Vishay experts will be on hand to dive into cutting-edge developments in automation, AI, e-mobility, and smart and alternative energy technologies.
In hall C4, booth 478, Vishay will be showcasing its differentiated products and solutions in a range of applications and use cases, including AI, alternative energy, energy storage systems (ESS), ADAS, e-mobility and urban mobility, EV charging infrastructure, HMI, HVAC, grid management, and building automation. In reference designs on display, Vishay’s components — including the company’s latest silicon carbide (SiC) MOSFETs, diodes, and power modules — make up to 70 % or more of the BOMs. Among the highlights taking center stage at Vishay’s booth will be:
AI
- A multi-phase power board for SoCs used in AI applications featuring 100 A smart power stages, ultra low DCR, vertical-mount IHVR inductors, and polymer tantalum capacitors
Alternative Energy
- An auxiliary power system for solar inverters, featuring 1200 V MaxSiC™ series SiC MOSFETs and FRED Pt® hyperfast rectifiers for the conversion of 100 V to 700 V inputs down to 24 V
- A bidirectional 230 V AC / 1500 V DC multi-waveform direct inverter with battery storage, featuring surface-mount MOSFETs with low on-resistance and NTC thermistors
- A 10 kW hybrid solar inverter with MPPT, featuring 1200 V, 15 A SiC diodes
e-Mobility
- An intelligent battery shunt built on WSBE Power Metal Strip® resistors, with low TCR and a CAN FD interface for 400 V / 800 V systems
- A 22 kW bidirectional 800 V to 800 V power converter for OBCs featuring SiC power modules
- A 4 kW bidirectional 800 V to 48 V power converter for auxiliary power featuring Si and SiC MOSFETs
- Active discharge circuits with wirewound safety resistors and MOSFET drivers for 400 V / 800 V DC-Link capacitors
ADAS
- A DMS / CMS system in which IR LEDs shut off when a user comes too close, featuring high accuracy ambient lights sensors with I²C interfaces; reflective optical sensors with transistor output; and fully integrated proximity and ambient lights sensors with infrared emitters, I²C interfaces, and interrupt functions
ESS
- Isolated busbar current sensors with analog output in which an isolation amplifier transmits voltage signals from a WSBE shunt and WSL2726 resistor
HMI and EMI Suppression
- An HMI featuring IHPT series haptic feedback actuators with Immersion Corporation licenses
- A multi-axis robot capturing and displaying the EMI performance of IHLE® inductors and competing devices running side by side
Grid Management and Power Conversion
- A smart meter and gateway for the real-time monitoring of energy consumption and generation in the home
- A bidirectional 72 V / 12 V DC/DC converter with Transzorb® TVS for telecom power supplies
Additional reference designs and demonstrations being offered by Vishay at electronica 2024 will include isolated AC/DC voltage sensors for high voltage networks; a BMS optical communication system; a compact 800 V power distribution solution; a 48 V, 15 kW traction inverter; a 48 V, 3 kW on-board charger; a 30 kW fast charger; a BLDC motor control board for heat pumps; a smart smoke, CO, and heat detector with supercapacitor backup; a photovoltaic energy harvester featuring ENYCAP® capacitors; a dual-side cooled, low voltage BLDC motor controller with high thermal efficiency, as well as designs featuring inrush current limiters and sensing thermistor solutions from the company’s latest acquisition: Ametherm.
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Vishay Intertechnology, Inc. announced results for the fiscal third quarter ended September 28, 2024.
Highlights
- 3Q 2024 revenues of $735.4 million
- Gross margin was 20.5% and included the negative impact of approximately 150 basis points related to the addition of Newport
- GAAP loss per share of ($0.14); adjusted EPS of $0.08 per share
- 3Q 2024 book-to-bill of 0.88 with book-to-bill of 0.79 for semiconductors and 0.97 for passive components
- Backlog at quarter end was 4.4 months
“For the third consecutive quarter this year, revenue has held fairly constant, reflecting a prolonged period of inventory de-stocking as the pace of consumption by industrial customers remains slow, backlogs are pushed out and macroeconomic conditions in Europe worsen,” said Joel Smejkal, President and CEO. “While the industry remains in a downcycle, we are making the necessary adjustments to manage costs while continuing to execute our five-year strategic plan. We are preparing to participate fully in the next industry up-cycle and we are putting the foundation in place to capitalize on the longer term demand catalysts of e-mobility and sustainability to drive faster revenue growth, and improve profitability and returns on invested capital.”
For the fourth quarter of 2024, management expects revenues in the range of $720 million +/- $20 million, with gross profit margin in the range of 20.0% +/- 50 basis points, including the negative impact of approximately 175 to 200 basis points from the addition of Newport.
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Vishay Intertechnology, Inc. introduced two new IGBT and MOSFET drivers in the compact, high isolation stretched SO-6 package. Delivering high peak output currents of 3 A and 4 A, respectively, the Vishay Semiconductors VOFD341A and VOFD343A offer high operating temperatures to +125 °C and low propagation delay of 200 ns maximum.
Consisting of an AlGaAs LED optically coupled to an integrated circuit with a power output stage, the optocouplers are intended for solar inverters and microinverters; AC and brushless DC industrial motor control inverters; and inverter stages for AC/DC conversion in UPS. The devices are ideally suited for directly driving IGBTs with ratings up to 1200 V / 100 A.
The high operating temperature of the VOFD341A and VOFD343A provides a higher temperature safety margin for more compact designs, while their high peak output current allows for faster switching by eliminating the need for an additional driver stage. The devices’ low propagation delay minimizes switching losses, while facilitating more precise PWM regulation.
The optocouplers’ high isolation package enables high working voltages up to 1.140 V, which allows for high voltage inverter stages, while still maintaining enough voltage safety margin. The RoHS-compliant devices offer high noise immunity of 50 kV/µs, which prevents fail functions in fast switching power stages.
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