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LATEST NEWSSemiQ Expands European SiC Distribution Through Partnership With Ibérica Semiconductores de Potencia
August 26, 2026
2 Min ReadSemiQ has signed a distribution agreement with Spain-based Ibérica Semiconductores de Potencia, expanding the availability and technical support of its silicon carbide power semiconductor portfolio across Europe.
Under the agreement, Ibérica will distribute SemiQ’s complete range of SiC products, including MOSFETs, Schottky diodes, power modules, discrete devices and bare die. The distributor will also provide application and design support to power system developers implementing SemiQ devices.
Headquartered in Madrid, Ibérica will lead the development of SemiQ’s business in Spain while also supporting customers and commercial opportunities across the wider European market. The company specializes in power electronics and serves applications including renewable energy, transportation and industrial systems.
SemiQ’s SiC portfolio targets high-voltage and high-power applications requiring high efficiency and reliability. The companies identified industrial and automotive electrification, data centers, renewable generation and energy storage as areas where SiC-based power electronics are seeing increased adoption.
SemiQ President Timothy Han said Ibérica’s experience in European power electronics will help expand the company’s regional reach while providing customers with technical support for the implementation of its SiC technologies.
Ibérica Managing Director Ignacio Salido de Miguel highlighted SiC efficiency and reliability as important characteristics for the continued electrification of European industrial and transportation systems and the deployment of solar, wind and other renewable-energy infrastructure.
SemiQ products are now available directly through Ibérica Semiconductores de Potencia, together with technical and design support for European customers.
Original – SemiQ
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SemiQ Inc. has expanded its QSiC™ Dual3 family of silicon carbide (SiC) half-bridge MOSFET modules with the introduction of high-thermal-performance variants featuring aluminum nitride (AlN) substrates and pre-applied thermal interface material (TIM), alongside new 1700 V products. The expanded portfolio is designed to address the increasing power and thermal requirements of applications including AI data center power systems, energy storage infrastructure, solid-state transformers (SSTs), AC-DC converters, and industrial motor drives used in cooling and chiller systems.
The QSiC Dual3 family is designed to support the development of power converters with high conversion efficiency and power density. To further enhance performance, selected modules are available with an optional parallel Schottky barrier diode (SBD), which helps reduce switching losses and improve efficiency, particularly in high-temperature operating environments.
Several devices within the family offer RDS(on) values as low as 1 mΩ while supporting power levels up to 1150 A at 1200 V in a 62 mm × 152 mm package. The portfolio is intended to provide designers with a scalable platform for high-power applications requiring both efficiency and compact system design.
SemiQ developed the QSiC Dual3 series as a replacement option for conventional IGBT modules, enabling system upgrades with minimal redesign. To support reliability requirements, all MOSFET die used in the modules undergo wafer-level gate oxide burn-in testing at voltages exceeding 1450 V. The modules also feature low junction-to-case thermal resistance, enabling simplified thermal management and the use of smaller, lighter heatsinks at the system level.
According to SemiQ, the growing demand for continuous operation in data centers is increasing the importance of efficient power conversion. The company noted that the QSiC Dual3 platform is being deployed in both active front-end power systems and liquid chiller compressor drives, offering reductions in system size and weight compared with traditional silicon IGBT-based solutions while leveraging the efficiency benefits of SiC technology.
The newly introduced high-thermal-performance variants are also being designed into main AC-DC power converters and solid-state transformer architectures. These systems are intended to support direct conversion from medium-voltage AC distribution levels, including 13.8 kV and 35 kV, to high-voltage 800 V DC systems used in modern data center power architectures.
The latest additions to the portfolio are identified by the “-NT” suffix and incorporate AlN substrates together with pre-applied TIM. SemiQ has also expanded the family with new 1700 V devices, including the GCMX1P7C170S4B1(-NT) and GCMS1P7C170S4B1(-NT), which are expected to become available in the coming months.
The expanded lineup includes both standard and Schottky barrier diode-equipped configurations across multiple resistance ratings. New 1200 V modules are available with RDS(on) values of 1 mΩ, 1.4 mΩ, and 2 mΩ, while the new 1700 V variants feature an RDS(on) of 1.7 mΩ. All devices are offered in the S4B1 half-bridge package with AlN substrate and thermal interface material options.
Original – SemiQ
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SemiQ Inc. will present its latest silicon carbide (SiC) power module developments at PCIM Europe 2026, including an expanded QSiC™ Dual3 MOSFET module family featuring new high-thermal-performance configurations with aluminum nitride (AlN) substrates and pre-applied thermal interface material (TIM).
The company will showcase its latest technologies at Alfatec’s booth (Hall 4A, Booth 110) during the exhibition, which takes place from June 9 to 11, 2026, at Messe Nürnberg in Nuremberg, Germany.
Designed to address the increasing power density and thermal management requirements of AI data centers, high-power industrial systems, solar photovoltaic installations, and electric vehicle applications, the expanded portfolio combines flexible module designs with high-efficiency silicon carbide technology.
Among the featured products will be SemiQ’s latest QSiC™ Gen3 SiC modules, which deliver a 30% reduction in both specific on-resistance (RONsp) and turn-off energy losses (EOFF) compared with previous generations. According to the company, these improvements help reduce cooling requirements and switching losses in applications such as EV charging infrastructure, energy storage systems, and industrial motor drives.
A key highlight of the exhibit will be the expanded QSiC Dual3 module family. These 1200 V half-bridge MOSFET modules are designed to support the development of high-efficiency, high-power-density power converters. The latest additions to the family incorporate aluminum nitride substrates and pre-applied thermal interface material to enhance thermal performance.
SemiQ will also display its S3 module family, which includes a 608 A half-bridge module featuring an ultra-low RDS(on) of 2.4 mΩ and a junction-to-case thermal resistance (RθJC) of only 0.07°C/W.
The company’s SOT-227 module lineup will also be featured, offering five module options with RDS(on) values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ. These modules are targeted at applications including server power supplies, battery charging systems, and photovoltaic inverters.
In addition, visitors will be able to explore SemiQ’s B2T1 six-pack module family, which offers RDS(on) values ranging from 19.5 mΩ to 82 mΩ. These modules are designed to minimize parasitic effects in motor drive systems and advanced AC-DC converter applications.
The company will also present its B3 full-bridge modules, which provide current ratings of up to 120 A and RDS(on) values as low as 8.6 mΩ. These products are intended to maximize power density in high-voltage DC-DC conversion systems.
“These SiC technologies directly address the challenges faced by those implementing AI infrastructure,” said Dr. Timothy Han, President of SemiQ. “By improving efficiency and addressing the escalating power demands of datacenters across key application areas, we are expanding the potential for AI to scale sustainably.”
SemiQ’s PCIM 2026 exhibit will focus on demonstrating how its latest silicon carbide module technologies support higher efficiency, improved thermal management, and increased power density across a range of demanding applications, including AI infrastructure, renewable energy systems, industrial automation, and electric mobility.
Visitors can view the company’s latest products and speak with technical representatives at Booth 110 in Hall 4A throughout the exhibition.
Original – SemiQ
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SemiQ Inc will debut its latest SiC module developments at the 2026 Applied Power Electronics Conference (APEC). The company will present the portfolio at Booth #1451 during the event, running March 22–26.
SemiQ said the modules are designed to deliver compact, high-efficiency solutions for active front ends (AFE) and for high-performance compressor units used in advanced data center cooling systems. The lineup targets rising power and thermal demands driven by AI-focused data centers, as well as high-power industrial and EV applications.
Visitors to the booth will be able to see SemiQ’s QSiC™ Gen3 SiC modules, which the company says deliver up to 30% reductions in specific on-resistance (RONsp) and turn-off energy losses (EOFF) versus prior generations. SemiQ positions these improvements as a way to cut switching losses, simplify cooling and raise overall system efficiency in applications such as EV charging stations, energy storage systems and industrial motor drives.
Additional module families featured at APEC 2026 include:
- S3 modules, including a 608 A half-bridge with 2.4 mΩ RDS(on) and RθJC of 0.07°C/W
- SOT-227 modules, with five variants offering RDS(on) values of 7.4, 14.5 and 34 mΩ for server power supplies, battery chargers and PV inverters
- B2T1 six-pack modules spanning 19.5 to 82 mΩ RDS(on), designed to minimize parasitics in motor drives and advanced AC-DC converters
- B3 full-bridge modules delivering up to 120 A with RDS(on) as low as 8.6 mΩ, targeting high power density in high-voltage DC-DC systems
“These SiC technologies directly address the challenges faced by those implementing AI infrastructure,” said Dr. Timothy Han, President at SemiQ. “By improving efficiency, and addressing the escalating power demands of datacenters across key application areas, we are expanding the potential for AI to scale sustainably.”
Original – SemiQ
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SemiQ Inc. has signed a distribution agreement with NAC Semi (NAC Group, Inc.), a global electronic component design services and distribution company.
The partnership is aimed at accelerating adoption of SemiQ’s SiC technology across North American markets, giving engineers more direct access to SemiQ’s power modules, MOSFETs and Schottky diodes, along with application-focused support.
Electrification trends in industrial and automotive systems, combined with rising efficiency requirements in data centers and other high-power segments, are driving increased demand for SiC-based power electronics. SemiQ said its rugged, reliable portfolio aligns well with NAC Semi’s focus areas including power conversion, EV platforms and industrial electrification.
“Partnering with NAC Semi significantly strengthens our ability to support our global customer base as they design next-generation power systems,” said Timothy Han, President of SemiQ. “NAC’s deep technical expertise, FAE support, and focus on demand creation align perfectly with SemiQ’s high-performance, reliable silicon carbide technologies for electrification, energy efficiency, and high-voltage applications.”
NAC Semi positions itself between catalog distributors and large fulfillment players by emphasizing demand-creation services, including dedicated Field Applications Engineer (FAE) support. By adding SemiQ to its line card, NAC Semi expands its ability to support SiC designs across applications such as EV charging stations, solar inverters and high-voltage power supplies.
“SemiQ’s reputation for high-quality, reliable SiC devices perfectly complements our existing power semiconductor offerings,” said Channing Applegarth, Vice President at NAC Semi. “Adding these MOSFETs and modules to our line card gives our customers a more complete SiC solution to accelerate innovation in these vital and fast-growing high-power markets.”
Original – SemiQ
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SemiQ Inc has broadened its third-generation QSiC™ MOSFET portfolio with seven new power modules that deliver industry-leading current density and thermal performance. The launch adds high-current S3 half-bridge, B2T1 six-pack and B3 full-bridge options engineered to raise system efficiency, simplify cooling, and cut switching losses in next-generation EV chargers, energy storage systems and industrial motor drives.
The expanded lineup targets the rising demand for ultra-efficient power conversion. In the standard 62 mm S3 half-bridge format, current capability reaches up to 608 A with junction-to-case thermal resistance as low as 0.07°C/W. The B2T1 six-pack modules integrate a complete three-phase power stage in a compact housing with RDS(on) values from 19.5 to 82 mΩ to streamline layout and minimize parasitics in motor drives and advanced AC-DC converters. The B3 full-bridge devices offer up to 120 A with on-resistance down to 8.6 mΩ and thermal resistance of 0.28°C/W, maximizing power density and efficiency for single-phase inverters and high-voltage DC-DC applications.
Quality and reliability measures include wafer-level gate-oxide burn-in to assure gate integrity and breakdown voltage testing beyond 1350 V. Built on SemiQ’s Gen3 SiC technology, the new modules operate at 18 V/-4.5 V gate drive and reduce both RONsp and turn-off energy (EOFF) by up to 30% versus prior generations.
Commenting on the release, Dr. Timothy Han said that EV infrastructure and new industrial applications demand ever-higher performance, and that the Gen3 full-bridge, half-bridge and six-pack modules—with higher current density and significantly lower on-resistance—are designed to meet those requirements.
Product list:
GCMX020A120B2T1P — Six-Pack, B2, 1200 V, 30 A, 19.5 mΩ
GCMX040A120B2T1P — Six-Pack, B2, 1200 V, 30 A, 39 mΩ
GCMX080A120B2T1P — Six-Pack, B2, 1200 V, 29 A, 82 mΩ
GCMX008B120B3H1P — Full-Bridge, B3, 1200 V, 120 A, 8.6 mΩ
GCMX016B120B3H1P — Full-Bridge, B3, 1200 V, 95 A, 16.6 mΩ
GCMX2P3B120S3B1-N — Half-Bridge, S3, 1200 V, 608 A, 2.4 mΩ
GCMX3P5B120S3B1-N — Half-Bridge, S3, 1200 V, 428 A, 3.6 mΩKey benefits:
• Higher power density through industry-leading current ratings and low RDS(on)
• Lower thermal resistance to ease cooling and reduce system size and cost
• Integrated topologies (six-pack, full-bridge, half-bridge) to simplify layout and minimize parasitics
• Up to 30% reduction in RONsp and EOFF compared to previous generations
• Robust screening, including wafer-level gate-oxide burn-in and >1350 V breakdown verificationAvailability details, reference designs and application notes can be aligned to specific EV charging, ESS and industrial drive requirements.
Original – SemiQ
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SemiQ Inc has introduced five new SOT-227 modules as part of its expanding family of 1200 V Gen3 SiC MOSFETs. The newly launched modules offer RDSon values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ, providing flexibility and enhanced performance for demanding power conversion systems.
These GCMS series modules integrate Schottky Barrier Diodes (SBDs), resulting in lower switching losses at high temperatures compared to the non-SBD GCMX modules. The devices are engineered for medium-voltage, high-power applications including battery chargers, photovoltaic inverters, server power supplies, and energy storage systems.
All modules undergo rigorous screening, including wafer-level gate-oxide burn-in testing beyond 1400 V and avalanche testing up to 800 mJ (330 mJ for 34 mΩ variants). They are designed for robustness, ease of installation, and thermal performance, featuring isolated backplates and direct mounting capability to heatsinks.
The 7.4 mΩ GCMX007C120S1-E1 module achieves low switching losses of 4.66 mJ (3.72 mJ turn-on, 0.94 mJ turn-off) and a body diode reverse recovery charge of 593 nC. Junction-to-case thermal resistance ranges from 0.23°C/W to 0.70°C/W depending on the module.
Commenting on the release, Dr. Timothy Han, President at SemiQ, stated: “The expansion of our third-generation 1200 V SiC MOSFET family marks another key milestone in SemiQ’s mission to deliver superior silicon carbide solutions for high-performance power applications. By broadening our portfolio with lower resistance options and rugged, easy-to-mount SOT-227 packages, we’re empowering designers to achieve higher efficiency, faster switching, and greater reliability across a wide range of energy and industrial systems.”
Original – SemiQ
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SemiQ Inc has announced the expansion of its Gen3 SiC MOSFET offering, launching a 1200 V TSPAK-packaged series. SemiQ unveiled the new devices for the first time at PCIM 2025 in Nuremberg at Alfatec’s stand (Hall 4A, Booth109).
The four-strong series of Gen3 MOSFETs delivers continuous drain currents of between 27 and 101 A and pulsed drain current from 70 to 350 A, with device resistances (RDSon) ranging from 80 to 16 mΩ respectively.
All devices are operational to 175oC and have been tested to voltages greater than 1400 V, undergoing wafer-level burn-in testing (WLBI) and UIL avalanche testing up to 800 mJ (RDSon = 16 mΩ, 160 mJ for the 80 mΩ device).
The easy-to-parallel devices implement top-side cooling and an isolated thermal path with a ceramic isolated back paddle. The package includes a driver source kelvin pin for gate driving as well as a gate pin, 5 source pins and a drain tab.
The TSPAK MOSFETs offer a lower capacitance, reduced switching losses, longer clearance distance and higher overall system efficiency. SemiQ is targeting the devices at a range of industrial and EV applications, including solar inverters and energy storage, induction heating and welding, EV charging stations and on-board chargers, motor drives, high-voltage DC/DC converters and UPS/switch mode power supplies.
Dr. Timothy Han, President at SemiQ said: “The launch of the TSPAK Gen3 SiC MOSFET family enables the creation of higher power density supplies, at a lower system cost as well as more compact system designs at large scale.”
All devices in the series are housed in a 18.6 x 14.0 x 3.5 mm TSPAK package, have a zero gate voltage drain current of 0.1 µA, a -10/10 nA gate-source leakage current and a 3.5 V gate threshold voltage (cited characteristics measured at 25oC). The series is available immediately.
The series’ cycle times range from 49 ns (80 mΩ MOSFET) to 114 ns (16 mΩ), and the devices have total switching energy of between 153 µJ (80 mΩ MOSFET) and 1565 µJ (16 mΩ). Key specifications are shown in the table below – all characteristics shown have been measured at 25oC.
GP3T016A120TS GP3T020A120TS GP3T040A120TS GP3T080A120TS Drain source voltage VDS 1200 V 1200 V 1200 V 1200 V Drain source on resistance RDSon 16 mΩ 18 mΩ 38 mΩ 80 mΩ Continuous drain current ID 101 A 89 A 50 A 27 A Pulse drain current ID.pulse 350 A 280 A 140 A 70 A Power dissipation Ptot 273 W 250 W 158 W 102 W Thermal resistance RthJC 0.49°C/W 0.53°C/W 0.83°C/W 1.25°C/W Turn on switching energy EON 1333 µJ 986 µJ 639 µJ 117 µJ Turn off switching energy EOFF 232 µJ 159 µJ 101 µJ 36 µJ Turn on delay tDon 19 ns 80 ns 15 ns 10 ns Rise time tR 13 ns 10 ns 9 ns 3 ns Turn off delay tDoff 64 ns 60 ns 32 ns 20 ns Fall time tF 18 ns 17 ns 10 ns 16 ns 1200V Gen3 SiC TSPAK MOSFET series is available in parts: GP3T016A120TS (16mΩ, 101A), GP3T020A120TS (18mΩ, 89A), GP3T040A120TS (38mΩ, 50A), and GP3T080A120TS (80mΩ, 27A).
Original – SemiQ
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SemiQ Inc will showcase several advances relating to high power SiC MOSFETs and modules at PCIM 2025.
PCIM takes place in Nuremberg from the 6th to the 8th May, with SemiQ partnering with alfatec to demonstrate its technology, which can be seen in Hall 4A, Booth 109 throughout the show.
This will include SemiQ’s recently launched third-generation SiC technologies and a wide range of modules to optimize systems for cost, resistance and thermal management. SiC technologies on display at PCIM will include:
1200 V SOT-227 MOSFET modules
Based on SemiQ’s third-generation SiC, these modules are available with an RDSon of 8.4 to 39 mΩ and deliver exceptional switching speeds and reduced losses with low junction to case thermal resistance.
Automotive-qualified QSiC 1200 V MOSFETs
The QSiC 1200 V MOSFETs are available in a bare die and TO-247 4L package and have received AEC-Q101 qualification for automotive systems. The third-generation SiC devices enable smaller die sizes while improving switching speeds and efficiency and are available with an RDSon between 16 and 80 mΩ.
1200 V full-bridge modules for solar inverters, energy storage and battery charging
SemiQ’s family of full-bridge modules deliver up to 333 W of power with a continuous drain of up to 102 A and sets a new standard for power density and efficiency in demanding DC applications.
1200 V six-pack modules for cost-optimized systems
Tested to over 1350 V, with 100% wafer-level burn in, SemiQ’s six-pack modules enable lower cost and more-compact system-level designs at large scale. Applications include AC/DC converters, energy storage systems, battery charging, motor drives and PFC boost converters, including EV fast charging.
To organize a meeting at PCIM, please contact media@semiq.com.
Original – SemiQ
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SemiQ Inc has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology.
In addition to smaller die sizes, third generation SIC devices offer faster switching speeds and reduced losses.
The family of highly rugged and easy mount devices currently offers six devices with an RDSon range of 8.4 to 39 mΩ: GCMS008C120S1-E1, GCMX008C120S1-E1, GCMS016C120S1-E1, GCMX016C120S1-E1, GCMS040C120S1-E1 and GCMX040C120S1-E1, with the GCMX040C120S1-E1 having a switching time as low as 67 ns. In addition to these six, two further modules – GCMS080C120S1-E1 and GCMX080C120S1-E1 – are available, each with an RDSon of 80 mΩ.
The COPACK MOSFETs with Schottky barrier diode provides exceptional switching losses at high junction temperature due to the low turn on switching losses.
SemiQ is targeting the robust SiC MOSFET modules at applications including solar inverters, energy storage systems, battery charging, and server power supplies. All devices have been screened with wafer-level gate-oxide burn-in tests and tested beyond 1400 V, with avalanche testing to 330 mJ (RDSon = 39 mΩ) or 800 mJ (RDSon = 16.5 or 8.4 mΩ).
In addition to having a drain-to-source voltage (VDS) of 1200 V, the MOSFET reduces total switching losses to as low as 468 µJ and a reverse recovery charge of 172 nC (GCMX040C120S1-E1). The family also has a low junction-to-case thermal resistance and comes with an isolated backplate and the ability to directly mount to a heatsink by 4kVAC galvanic isolation testing.
Specifications: Ratings and electrical/thermal characteristics
The QSiC 1200 V MOSFET modules have a continuous operational and storage temperature of -55oC to 175oC. It has a recommended operational gate-source voltage of -4.5/18 V, with a VGSmax of -8/22 V, and a power dissipation of 183 to 536 W (RDSon = 39 and mΩ, core and junction temperature 25oC).
For static electrical characteristics, the device has a junction-to-case thermal resistance of 0.23oC per watt (RDSon = 8.4) as well as a typical zero-gate voltage drain current of 100 nA, and a gate-source voltage current of 10 nA.
The fastest switching device has a turn-on delay time of 13 ns with a rise time of 7 ns; its turn-off delay time is 18 ns with a fall time of 29 ns.
Original – SemiQ
