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Renesas Electronics has expanded its gallium nitride portfolio into low-voltage power applications with its first family of 100V enhancement-mode GaN discrete transistors. The devices target AI data centers, robotics, factory automation, industrial motor drives, power tools and solar microinverters.
The new family consists of the RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC. The portfolio spans RDS(on) values from 5mΩ down to 1.2mΩ and is available with bottom-side and dual-side cooling configurations.
Renesas said the devices provide up to 35% lower hard-switching figure of merit and up to 63% lower soft-switching figure of merit compared with comparable GaN devices. The transistors combine low total gate charge and output charge with zero reverse-recovery charge to reduce switching losses.
The devices are designed for high-frequency power conversion, including applications moving toward MHz-class switching. Target topologies include synchronous rectification, multiphase buck converters and motor drives, particularly in systems using 48V bus architectures and downstream conversion stages associated with 800VDC data center power distribution.
According to Renesas, the low-voltage GaN devices can reduce switching losses by 40% to 70% and provide up to twice the system-level power density, depending on the application and converter architecture. The company also claims efficiency improvements of 1% to 3% compared with silicon-based designs.
The higher switching frequencies supported by the devices can enable smaller magnetic and passive components, while the low RDS(on) reduces conduction losses. Dual-side-cooled variants provide an additional thermal path for applications with higher power density.
Renesas is offering the GaN transistors in standard MOSFET-compatible package footprints to simplify migration from existing silicon MOSFET designs without requiring significant PCB changes.
Original – Renesas Electronics
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Renesas Electronics has introduced the TP65H020G4PLSGBD, a 650V depletion-mode GaN power device with dual-side cooling for high-density power conversion in 800V high-voltage DC AI data center architectures. The device is currently sampling to major AI data center OEMs and ODMs.
Based on Renesas’ Gen IV Plus GaN technology, the device provides 20mΩ on-resistance and supports operation up to 700V. It targets 800V DC/DC intermediate bus converters that step down to 48V, 12V or 6V, as well as battery backup and capacitor bank stages in sidecar power racks.
The TP65H020G4PLSGBD uses an 8 × 8mm dual-side-cooled PQFN package that dissipates heat through both the top and bottom surfaces. Renesas said the design reduces top-side thermal impedance by 10%, while its footprint is 57% smaller than the company’s existing 10 × 15mm TOLT package.
The Gen IV Plus architecture combines low gate charge and output capacitance with an integrated freewheeling diode designed for minimal reverse recovery. The device also has a high threshold voltage and can operate without negative gate bias, allowing it to be driven using a standard silicon gate driver rather than a dedicated enhancement-mode GaN driver.
Renesas designed the device for switching frequencies extending into the MHz range, enabling reductions in the size of passive components. The dual-side-cooled PQFN package was developed in collaboration with AI infrastructure customers with the aim of establishing a common footprint for high-density power designs.
The company has also developed a 6kW 800V-to-48V LLC DC transformer reference design using the new GaN device and a Renesas RA6T3 microcontroller. The design achieves a power density of 2.6kW/in³, while full-load testing showed efficiency 0.21 percentage points higher than an equivalent design based on Renesas’ TOLT package.
Renesas is also using the 8 × 8mm platform in 800V-to-12V and 800V-to-6V intermediate bus converter reference designs. The company plans to showcase the TP65H020G4PLSGBD and its 800V power solutions at the OCP Global Summit, scheduled for October 12–15 in San Jose, California.
Original – Renesas Electronics
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Eggtronic has introduced a 140W USB-C Power Delivery AC/DC reference platform for premium laptops and other high-performance USB-C devices, combining its EPIC combo controller with a high-voltage GaN transistor from Renesas.
The reference design uses Renesas’ TP70H150G4LSG, a 700V GaN transistor with an RDS(on) of 150mΩ. Eggtronic said the platform achieves conversion efficiency approaching 96%, while targeting a bill of materials cost comparable to a conventional quasi-resonant (QR) flyback converter.
At a 90VAC input, the platform achieves 94.5% efficiency. It is also designed to maintain high efficiency under light-load conditions and support compliance with DOE Level VII energy-efficiency requirements.
Eggtronic’s EPIC combo controller integrates several power conversion and control functions into a single device, including totem-pole power factor correction, isolated primary-side regulation, synchronous rectification, isolated communication and USB Power Delivery protocol management.
The AC/DC architecture combines a totem-pole PFC stage with Eggtronic’s proprietary QuarEgg regenerative flyback topology. The company said the PFC implementation is designed to address electromagnetic interference and light-load efficiency limitations associated with conventional totem-pole designs.
The QuarEgg stage uses a single primary-side switch and is designed to provide an alternative to LLC, asymmetrical half-bridge and active-clamp flyback architectures. Eggtronic is targeting higher conversion efficiency while retaining the component count and cost characteristics associated with QR flyback designs.
The 140W USB-C Power Delivery reference board is available now and is intended to accelerate development of notebook power adapters and other high-power USB-C devices.
Original – Eggtronic
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Renesas Electronics has opened a Physical AI & Robotics Lab in Beijing, China, providing a dedicated facility for customers to demonstrate, validate and jointly develop next-generation robotic systems.
The facility will serve as a hub for Renesas’ physical AI activities, supporting projects from proof-of-concept development through deployment at scale. The opening follows the establishment of the company’s Physical AI Division on July 1, 2026.
Renesas defines physical AI as systems that apply artificial intelligence to interact with the physical world, requiring real-time perception, decision-making and actuation with deterministic behavior. Humanoid robots are a key target application, requiring integration across embedded processing, sensing, motion control, actuation, power management, software and development tools.
Renesas said it can currently address approximately 30% of the bill of materials for a humanoid robot and sees the potential to increase that coverage to 70% through its portfolio of control, power, sensing, AI, software and ecosystem technologies.
The Beijing lab will integrate hardware, software, AI modeling, control, power supply, sensing and system-level verification capabilities. Rather than operating solely as a product demonstration facility, it will support validation and co-development of complete robotics solutions with customers and technology partners.
Renesas plans to use the facility to collaborate with customers, universities, startups and ecosystem partners in China. The company identified the country’s robotics customer base, supply chain and technology ecosystem as factors behind the location of the new lab.
For humanoid and other physical AI systems, Renesas’ semiconductor portfolio covers functions including central and motion control, sensing, actuation and power management. The company is also combining these technologies with functional safety, edge AI and Renesas 365, its cloud-based electronics development platform, for robotics system development.
Original – Renesas Electronics
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Navitas Semiconductor has filed a patent infringement lawsuit against Renesas Electronics in the U.S. District Court for the Eastern District of Texas, escalating intellectual-property competition within the rapidly growing GaN power semiconductor market.
The lawsuit alleges that major Renesas GaN product lines, including its SuperGaN power semiconductors, infringe four Navitas U.S. patents: Nos. 9,929,079; 11,545,838; 11,770,010; and 11,862,996. Navitas said the patents form part of its broader GaN intellectual-property portfolio developed through its internal research and engineering activities.
Navitas has built a global IP portfolio of more than 300 issued and pending patents spanning its wide-bandgap semiconductor technologies. The company argues that protecting this intellectual property is increasingly important as GaN adoption expands beyond consumer power adapters into higher-power applications.
The legal action comes as Navitas shifts its growth strategy toward AI infrastructure, including AI data-center power systems and the energy and grid infrastructure supporting them. The company said momentum in these higher-power markets contributed to its second-quarter 2026 performance and that it expects revenue growth to accelerate in the third quarter as it executes its Navitas 2.0 strategy.
Original – Navitas Semiconductor
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Renesas Electronics Corporation has announced the promotion of Gaurang Shah to Senior Vice President, effective July 1, 2026. Shah will continue in his current role as General Manager of Embedded Processing, where he leads one of the company’s core product organizations focused on microcontrollers, microprocessors, and embedded computing solutions.
Shah was appointed Vice President and General Manager of Embedded Processing on January 1, 2026, following organizational changes aimed at strengthening integration between Renesas’ embedded processing and connectivity businesses. The restructuring was designed to improve coordination across key technology platforms and support the company’s strategy of delivering more comprehensive, system-level semiconductor solutions.
In his current role, Shah is responsible for overseeing the Embedded Processing Product Group, a critical business unit within Renesas that serves automotive, industrial, infrastructure, consumer, and IoT markets. The organization plays a central role in the development of the company’s microcontroller (MCU), microprocessor (MPU), and embedded processing portfolios, which form the foundation of many of Renesas’ integrated hardware and software platforms.
Shah has also served as a member of Renesas’ Enterprise Leadership Team, contributing to the company’s broader strategic and operational direction.
According to Renesas, the promotion recognizes Shah’s leadership and contributions to advancing the company’s embedded processing business while strengthening its ability to deliver integrated semiconductor solutions to customers worldwide.
The appointment comes as Renesas continues to expand its focus on system-level solutions that combine embedded processing, connectivity, analog, power management, and software capabilities. Embedded processing remains a key growth area for the company, driven by increasing demand for intelligent edge computing, industrial automation, automotive electrification, software-defined systems, and connected devices.
By elevating Shah to Senior Vice President, Renesas reinforces the strategic importance of its embedded processing organization and its role in supporting the company’s long-term growth and technology roadmap.
Original – Renesas Electronics
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Renesas Electronics Corporation has announced a leadership transition within its Engineering organization.
Balaji Kanigicherla, Vice President, Head of Engineering and Chief Technology Officer (CTO), will step down from his position at his own request, effective June 5, 2026.
To ensure continuity of leadership, Renesas has appointed Manoher Bommena, Vice President of Innovation Office and EDA Technology, and Ramkumar Subramanian, Vice President of Business Operations & Partnerships, both from the Engineering Group, as Interim Co-Heads of Engineering, effective June 6, 2026.
In their interim roles, Bommena and Subramanian will jointly oversee the company’s engineering, product development and innovation activities.
Renesas also announced that it has initiated a search process to identify a permanent Head of Engineering and Chief Technology Officer to support the company’s long-term growth objectives and technology strategy.
Original – Renesas Electronics
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Renesas Electronics Corporation reported its financial results for the first quarter of 2026, demonstrating strong profitability and margin performance despite ongoing portfolio adjustments.
On a Non-GAAP basis, Renesas recorded revenue of ¥372.3 billion, with a gross margin of 59.2% and operating margin of 33.7%. Profit attributable to shareholders reached ¥102.9 billion, while EBITDA stood at ¥146.2 billion, reflecting robust operational efficiency.
On an IFRS basis, revenue was slightly higher at ¥380.3 billion, with gross margin at 58.7% and operating margin at 23.8%. Net profit attributable to shareholders totaled ¥68.1 billion, with EBITDA of ¥138.0 billion.
The difference between Non-GAAP and IFRS results primarily reflects adjustments for non-recurring items, including amortization of acquired intangibles, stock-based compensation, and other one-time expenses. Notably, the company has excluded its Timing business from Non-GAAP reporting following the announced divestiture, signaling ongoing portfolio optimization.
From a performance perspective, Renesas continues to deliver strong margins compared to industry peers, supported by its focus on high-value segments such as automotive, industrial, and infrastructure. The operating margin above 30% (Non-GAAP) highlights effective cost control and a favorable product mix.
Strategically, the results indicate stability in Renesas’ core business despite broader semiconductor market fluctuations. The modest revenue outperformance versus guidance suggests resilient demand, particularly in automotive and industrial applications, which remain key growth drivers for the company.
From a market standpoint, Renesas’ profitability underscores the strength of analog and power semiconductor segments, which tend to be more resilient than memory or consumer-driven markets. As electrification, AI infrastructure, and industrial automation continue to expand, Renesas is well-positioned to benefit from sustained demand in these segments while continuing to streamline its business portfolio.
Original – Renesas Electronics
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Renesas Electronics Corporation has launched the TP65B110HRU, the industry’s first bidirectional GaN switch based on depletion-mode (d-mode) technology, enabling both positive and negative current blocking in a single device.
The new 650V SuperGaN® device is designed to simplify power conversion architectures in applications such as solar microinverters, AI data centers, and onboard EV chargers. By replacing traditional back-to-back FET configurations, the device allows true single-stage power conversion, reducing component count, system complexity, and losses.
Conventional silicon and SiC switches are unidirectional, requiring multi-stage topologies or back-to-back configurations that increase switch count and reduce efficiency. In contrast, Renesas’ bidirectional GaN device integrates this functionality into a single component. For example, a solar microinverter can reduce its switch count by half and eliminate DC-link capacitors, while achieving efficiencies above 97.5%.
The device combines a high-voltage GaN structure with co-packaged low-voltage silicon MOSFETs, enabling compatibility with standard gate drivers without requiring negative gate bias. This simplifies gate drive design while maintaining robust switching performance in both hard- and soft-switching topologies. With dv/dt immunity exceeding 100 V/ns and low on-resistance of 110 mΩ, the device supports high-frequency, high-density designs.
From a technology perspective, this marks a significant step toward system-level simplification in power electronics. Bidirectional GaN enables new converter topologies, particularly in high-growth segments like AI power infrastructure and distributed energy systems, where efficiency, density, and BOM reduction are critical.
Renesas is positioning the device within its broader system solution strategy, offering evaluation kits and “Winning Combinations” that integrate controllers, drivers, and power devices to accelerate time-to-market and reduce design risk.
Original – Renesas Electronics
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Renesas Electronics Corporation announced new leadership appointments aimed at accelerating growth in two key markets, India and China.
Effective March 1, 2026, Malini Narayanamoorthi assumed the role of Vice President and President of Renesas Electronics India. She previously served as India Country Manager and Vice President of MID Engineering within the Analog & Mixed Signal Product Group. Over the past several years, Narayanamoorthi has played a key role in expanding Renesas’ presence in India by strengthening customer relationships, advancing engineering programs, and improving collaboration across global teams. In her new position, she will focus on accelerating the company’s growth in India by leveraging the country’s rapidly growing technology ecosystem and strong engineering talent base.
Renesas also appointed Yvonne Liu as Vice President and President of Renesas Electronics China, also effective March 1, 2026. Liu brings 26 years of semiconductor industry experience across automotive, consumer, industrial, IoT, and cybersecurity markets. Prior to joining Renesas, she held senior leadership roles at NXP Semiconductors, most recently serving as Vice President and General Manager of Greater China Automotive. In her new role, Liu will oversee Renesas’ operations and strategic execution in China while strengthening engagement with customers and ecosystem partners.
Both executives will report directly to Hidetoshi Shibata, CEO of Renesas. The company said the appointments reinforce its commitment to strengthening operations and driving growth in two of Asia’s most important and rapidly expanding semiconductor markets.
Original – Renesas Electronics
