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SemiQ Inc has announced the QSiC 1200V MOSFET, a third-generation SiC device that shrinks the die size while improving switching speeds and efficiency.
The device is 20% smaller versus QSiC’s second-generation SiC MOSFETs and has been developed to increase performance and cut switching losses in high-voltage applications. SemiQ is targeting a diverse range of markets including EV‑charging stations, solar inverters, industrial power supplies and induction heating.
It will be on display for the first time at the Applied Power Electronics Conference (APEC), on March 16-20, 2025.
In addition to having a drain-to-source voltage (VDS) of 1200 V, the MOSFET reduces total switching losses to 1646 µJ and has a low on-resistance (RDS,on) of 16.1 mΩ. It is available as a bare die or in a four-pin TO-247 4L discrete package measuring 31.4 x 16.1 x 4.8 mm, which includes a reliable body diode and a driver-source pin for gate driving.
High-quality Known Good Die (KGD) testing has been conducted using UV tape and Tape & Reels, with all parts undergoing testing and verification at voltages exceeding 1400V, as well as being avalanche tested to 800 mJ. Reliability is further improved through the device’s 100% wafer-level gate oxide burn-in screening and 100% UIL testing of discrete packaged devices.
The device has been developed to have a low reverse recovery charge (QRR 470 nC) and lower capacitance, improving switching speed, switching losses, EMI and overall efficiency; to be easy to parallel; and with a longer creepage distance (9 mm), improving electrical insulation, voltage tolerance and reliability.
Dr. Timothy Han, President at SemiQ said: “The move to Gen3 SiC further increases the benefits of SiC MOSFETs over IGBTs. These devices not only deliver vastly improved performance, but cut die size and cost versus previous generations. As a result, the launch of the QSiC 1200V opens the technology, and its benefits, to a far greater range of applications. The device delivers industry leading performance figures, notably on gate threshold voltage, and we’re delighted to be demonstrating this first at APEC.”
The QSiC 1200V MOSFETs has a continuous operational and storage temperature of -55oC to 175oC. It has a recommended operational gate-source voltage of -4/18 V, with a VGSmax of -8/22 V, and a power dissipation of 484 W (core and junction temperature 25oC).
For static electrical characteristics, the device has a junction-to-case thermal resistance of 0.26oC per watt (40oC per watt junction to ambient). Its Zero gate voltage drain current is 100 nA, with a gate-source voltage current of 10 nA. Its AC characteristics include a turn-on delay time of 21 ns with rise time of 25 ns; its turn-off delay time is 65 ns with a fall time of 20 ns.
An increased range of resistances is available in bare-die and TO-247 4L packages with the following options:
- 16 mΩ: GP3T016A120X / GP3T016A120H
- 20 mΩ: GP3T020A120X / GP3T020A120H
- 40 mΩ: GP3T040A120X / GP3T040A120H
- 80 mΩ: GP3T080A120X / GP3T040A120H
Both the 16 mΩ (AS3T016A120X / AS3T016A120H) and 40 mΩ (AS3T040A120X / AS3T040A120H) options have been qualified for Automotive Applications Product Validation according to AEC-Q101.
The SemiQ QSiC 1200V will be on display at the Georgia World Congress Center in Atlanta, from March 16 to 20, 2025. Visitors to SemiQ’s booth #1348 will have the opportunity to explore the new third-generation MOSFETs.
Original – SemiQ
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SemiQ Inc. announced a family of 1700 V SiC MOSFETs designed to meet the needs of medium-voltage high power conversion applications, such as photovoltaic and wind inverters, energy storage, EV and road-side charging, uninterruptable power supplies, and induction heating/welding.
The high-speed QSiC™ 1700 V switching planar D-MOSFETs enable more compact system designs at large scale, with higher power densities and lower system costs. They feature a reliable body diode, capable of operation at up to 175oC, with all components tested to beyond 1900 V, and UIL avalanche tested to 600 mJ.
The QSiC 1700 V devices are available in both a bare die form (GP2T030A170X), and as a 4-pin TO-247-4L-packaged discrete (GP2T030A170H) with drain, source, driver source and gate pins. Both are also available in an AEC-Q101 automotive qualified version (AS2T030A170X and AS2T030A170H).
The MOSFETs deliver low switching and conduction losses, low capacitance and feature a rugged gate oxide for long-term reliability, with 100 percent of components undergoing wafer-level burn in (WLBI) to screen out potentially weak oxide devices.
SemiQ has also announced a series of three modules as part of the family to simplify system design, this includes a standard-footprint 62 mm half-bridge module housed in an S3 package with an AIN insolated baseplate, as well as two SOT-227 packaged power modules.
The QSiC 1700 V series’ bare die MOSFET comes with an aluminum (Al) top side and nickel/silver (Ni/Ag) bottom side. Both it and the TO-247-4L packaged device have a power dissipation of 564 W, with a continuous drain current of 83 A (at 25oC, 61A at 100oC) and a pulsed drain current of 250 A (at 25oC). They also feature a gate threshold voltage of 2.7 V (at 25oC, 2.1 V at 125oC), an RDSON of 31 mΩ (at 25oC, 57 mΩ at 125oC), a low (10n A) gate source leakage current and a fast reverse recovery time (tRR) of 17 ns. The TO-247-4L package has a junction to case thermal resistance of 0.27oC per watt.
The two 4-pin power modules are housed in a 38.0 x 24.8 x 11.7 mm SOT-227 design and deliver an increased power dissipation of 652 W with an increased continuous drain current of 123 A (at 25oC – GCMX015A170S1E1) and 88 A (at 25oC GCMX030A170S1-E1). In addition to low switching losses, both modules have a low junction-to-case thermal resistance of 0.19oC and 0.36oC per watt and feature an easy-mount design for direct mounting of the isolated package to a heatsink.
The half-bridge module is housed in a 61.4 x 106.4 x 30.9 mm 9-pin S3 package and delivers a power dissipation of 2113 W with a continuous drain current of 397 A and a pulsed drain current of 700 A. In addition to low switching losses, the GCMX005A170S3B1-N module has a junction to case thermal resistance of 0.06oC per watt.
Original – SemiQ
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SemiQ Inc announced the addition of an S7 package to its QSiC™ family of 1200V, half-bridge MOSFET and Schottky diode SiC power modules. The parts further enhance design flexibility for power engineers by providing compact, high-efficiency, high-performance options for new designs while supporting drop-in-replacement in legacy systems that require more efficient operation.
This latest announcement sees the availability of a 529A MOSFET module (GCMX003A120S7B1), a 348A MOSFET module (GCMX005A120S7B1), and two low-noise SiC Schottky diode half-bridge modules (GHXS300A120S7D5 and GHXS400A120S7D5) in an S7 package with industry-standard 62.0mm footprints and a height of just 17.0mm.
The new package addresses the size, weight and power requirements of demanding applications ranging from induction heaters, welding equipment and uninterruptible power supplies (UPS) to photovoltaic and wind inverters, energy storage systems, high-voltage DC-DC converters and battery charging systems for electric vehicles (EVs). As well as the compact form factor of the modules themselves, high-efficiency, low-loss operation helps to reduce system heat dissipation and supports the use of smaller heatsinks.
“Our aim is to provide a comprehensive portfolio of SiC technologies that allow designers to optimize the efficiency, performance and size of today’s demanding applications,” says Dr. Timothy Han, President at SemiQ. “Adding new package option to our 1200V QSiC MOSFET and SiC diode module families further extends the choices available to designers who need to create completely new applications or who are looking to upgrade legacy systems without significant redesign.”
Crafted from high-performance ceramics, SemiQ’s modules achieve exceptional performance levels and support increased power density and more compact designs – especially in high-frequency and high-power environments.
To guarantee a stable gate threshold voltage and premium gate oxide quality for each module, SemiQ conducts gate burn-in testing at the wafer level. In addition to the burn-in test, which contributes to mitigating extrinsic failure rates, various stress tests – including gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB) – are employed to attain the necessary automotive and industrial grade quality standards. All parts have undergone testing surpassing 1400V.
Part numbers of SemiQ’s new 1200V modules in S7 packages are shown below.
Part Numbers Circuit Configuration Ratings, Packages RdsOn mΩ GCMX003A120S7B1 S7 Half-bridge 1200V/529A, B1 3.0 GCMX005A120S7B1 S7 Half-bridge 1200V/348A, B1 4.9 GHXS300A120S7D5 S7 Half-bridge 1200V/300A, D5 GHXS400A120S7D5 S7 Half-bridge 1200V/400A, D5 Original – SemiQ
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SemiQ Inc. unveiled the latest addition to the company’s QSiC™ family. The QSiC 1200V SiC MOSFET modules in full-bridge configurations deliver near zero switching loss, significantly improving efficiency, reducing heat dissipation, and allowing the use of smaller heatsinks.
With a high breakdown voltage exceeding 1400V, the QSiC modules in full-bridge configurations withstand high-temperature operation at Tj = 175°C with minimal Rds(On) shift across the entire temperature spectrum. Crafted from high-performance ceramics, SemiQ’s modules achieve exceptional performance levels, increased power density, and more compact designs—especially in high-frequency and high-power environments.
Consequently, they are well-suited for demanding applications that require bidirectional power flow or a broader range of control, such as solar inverters, drives and chargers for Electric Vehicles (EVs) DC-DC converters and power supplies.
In solar inverter applications, SemiQ’s technology empowers designers to achieve greater efficiency – reaching as high as 98% – as well as more compact designs. It helps reduce heat loss, improve thermal stability, and enhance reliability, backed by over 54 million hours of HTRB/H3TRB testing. The 1200V MOSFETs also maximize efficiency gains in DC-DC converters while enhancing reliability and minimizing power dissipation.
To guarantee a stable gate threshold voltage and premium gate oxide quality for each module, SemiQ conducts gate burn-in testing at the wafer level. In addition to the burn-in test, which contributes to mitigating extrinsic failure rates, various stress tests—including gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB)—are employed to attain the necessary automotive and industrial grade quality standards. The devices also offer extended short-circuit ratings, and all parts have undergone testing surpassing 1400V.
“At SemiQ, our commitment lies in the meticulous optimization and customization of each module, ensuring they not only meet but exceed the unique demands of high-efficiency, high-power applications,” said Dr. Timothy Han, President at SemiQ. “We believe in empowering innovation through tailored solutions, and our SiC modules exemplify the pinnacle of performance, precision, and reliability in every customized design.”
SemiQ is set to debut its QSiC product family in SOT-227, half-bridge, and full-bridge packages at the Applied Power Electronics Conference (APEC) in Long Beach, CA, from February 25 to 29, 2024. Attendees at SemiQ’s booth #2245 will be the first to explore the newest additions to the QSiC lineup. Schedule a meeting with the SemiQ team using online calendar or email at media@semiq.com.
SemiQ’s new 1200V modules in full-bridge packages are available in 20mΩ, 40mΩ, 80mΩ SiC MOSFETs categories:
Part Numbers Circuit Configuration Ratings, Packages RdsOn mΩ GCMX020A120B2H1P Full-bridge 1200V/102A, B2 20 GCMX040A120B2H1P Full-bridge 1200V/56A, B2 40 GCMX080A120B2H1P Full-bridge 1200V/27A, B2 80 GCMX020A120B3H1P Full-bridge 1200V/93A, B3 20 GCMX040A120B3H1P Full-bridge 1200V/53A, B3 40 Original – SemiQ
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SemiQ will be exhibiting its latest portfolio of advanced silicon carbide (SiC) modules at the Applied Power Electronics Conference (APEC) in Long Beach, CA February 25-29, 2024.
Visitors to SemiQ’s booth #2245 will have the first opportunity to explore the latest QSiC™ 1200V SiC modules. These modules are designed to operate reliably in challenging conditions and enable high-performance, high-density implementation while minimizing both dynamic and static losses. Crafted from high-performance ceramics, the modules are available in SOT-227, half-bridge and full-bridge options.
The new QSiC MOSFET modules support a variety of innovative automotive and industrial power applications where efficiency, power density and performance are critical design criteria. These include EV charging, on-board chargers (OBCs), DC-DC converters, E-compressors, fuel cell converters, medical power supplies, energy storage systems, solar and wind energy systems, data center power supplies and UPS/PFC circuits.
“We’re excited to showcase our new family of QSiC™ 1200V MOSFET modules at APEC and look forward to empowering engineers across the renewable energy, automotive, medical, and industrial sectors to build robust systems,” said Dr. Timothy Han, President at SemiQ.
“This family is a testament to SemiQ’s dedication to excellence in semiconductor technology. Our power modules stand out not just for their high performance, but also for the rigorous testing that ensures reliability. All modules have undergone testing exceeding 1350V. From gate burn-in testing to stress tests like HTRB and H3TRB, we prioritize stability and quality.”
Held annually, APEC is a three-day technology event that focuses on the practical and applied aspects of the power electronics business. The conference provides ample opportunities for networking, offering a range of activities from technical and industry sessions to social events and exhibitor presentations. APEC caters to a diverse group of professionals in the field of power electronics, ranging from designers of power supplies, DC-DC converters, and motor drives to equipment OEMs that use power supplies, as well as manufacturers and suppliers.
Additionally, professional education seminars are available for attendees who wish to stay updated on the latest industry trends. These seminars offer in-depth discussions of important and complex power electronics topics that can vary from introductory to advanced in technical level.
Original – SemiQ
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SemiQ announced that it has expanded its portfolio of QSiC™ Silicon Carbide modules with the launch of a family of 1200V MOSFETs that pairs with or without 1200V SiC Schottky Diodes in a SOT-227 package.
Crafted from high-performance ceramics and rigorously engineered to function with unwavering reliability in challenging conditions, the newly introduced SemiQ SiC modules achieve remarkably high performance. This enhanced performance empowers higher power densities and more streamlined design configurations.
The QSiC™ modules feature high breakdown voltage (> 1400 V), high-temperature operation (Tj = 175 °C), and low Rds(On) shift over the full operating temperature range while providing industry-leading gate oxide stability and gate oxide lifetime, avalanche (UIS) ruggedness, and extended short-circuit withstand times.
Target markets for the new QSiC™ modules with our existing SOT-227 SiC SBD modules include EV charging, on-board chargers (OBCs), DC-DC converters, E-compressors, fuel cell converters, medical power supplies, energy storage systems, solar and wind energy systems, data center power supplies, UPS/PFC circuits, and other automotive and industrial power applications.
All of the new QSiC™ modules are tested at wafer-level gate burn-in to provide high-quality gate oxide with stable gate threshold voltage. Besides the burn-in test, which helps to stabilize the extrinsic failure rate, stress tests such as gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB) to ensure requisite industrial grade quality levels.
Dr. Timothy Han, President at SemiQ, said, “We are delighted with the customer input and needs for our new family of QSiC™ high-power modules and thank our SemiQ team who have worked tirelessly to build and qualify our latest QSiC™ modules.”
SemiQ’s new 1200V SOT-227 modules are available in 20mΩ, 40mΩ, 80mΩ SiC MOSFET categories. A table with part numbers is shown below.
Part Numbers Circuit Configuration Ratings, Packages Rds(on), mΩ GCMX020B120S1-E1 Single MOSFET w/o SBD 1200V/113A, SOT-227 20 GCMS020B120S1-E1 Single MOSFET w SBD 1200V/113A, SOT-227 20 GCMX040B120S1-E1 Single MOSFET w/o SBD 1200V/57A, SOT-227 40 GCMS040B120S1-E1 Single MOSFET w SBD 1200V/57A, SOT-227 40 GCMX080B120S1-E1 Single MOSFET w/o SBD 1200V/30A, SOT-227 80 GCMS080B120S1-E1 Single MOSFET w SBD 1200V/30A, SOT-227 80 Original – SemiQ
