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SemiQ Inc will give the first official unveiling of the company’s new 1700 V and 1200 V Gen 3 SiC MOSFETs at the 2025 Applied Power Electronics Conference (APEC).
APEC takes place at the Georgia World Congress Center in Atlanta from March 16, with SemiQ’s booth located at stand #1348.
SemiQ’s 1200 V Gen3 SiC was announced in February, delivering an improved performance with a smaller die size and at a lower cost. The series includes automotive qualified (AEC-Q101) options and Known Good Die (KGD) testing has been implemented across the series with verification at voltages exceeding 1400 V, plus avalanche testing to 800 mJ. Reliability is further improved through 100% gate-oxide burn-in screening and UIL testing of discrete packaged devices.
The company’s new 1700 V MOSFET family of MOSFETS and modules with AEC-Q101 certification is designed to meet the needs of medium-voltage high power conversion applications, from photovoltaic, wind inverters and energy storage to EV and roadside charging as well as uninterruptable power supplies, and induction heating/welding. These switching planar D-MOSFETs enable more compact system designs with higher power densities and have been tested to KGD beyond 1900 V, with UIL avalanche testing to 600 mJ.
Dr. Timothy Han, President at SemiQ said: “There is so much innovation happening in power electronics right now and we’re delighted to have launched our next generation technologies in time to have them on display at APEC. The show brings together many of the leading minds within the industry and we’re looking forward to discussing the challenges faced and how we can help them.”
Original – SemiQ
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Toshiba Electronics Europe GmbH has launched an N-channel power MOSFET to address the growing market demand for improved efficiency in power supply circuits. The new TK024N60Z1 uses the proven DTMOSVI 600V series process with a super junction structure to achieve low on-resistance and reduced conduction losses. Applications include servers in data centres, switched-mode power supplies for industrial equipment, and power conditioners for photovoltaic generators.
The TK024N60Z1 has a drain-source on-resistance RDS(ON) of 0.024Ω (max), which is the lowest in the DTMOSVI 600V series. It also improves power supply efficiency, which reduces heat generation. Combined with the TO-247 package, which delivers high heat dissipation, the TK024N60Z1 offers good heat management characteristics.
Like other MOSFETS in the DTMOSVI 600V series, the TK024N60Z1 benefits from an optimised gate design and process. This reduces the value of drain-source on-resistance per unit area by approximately 13%. More importantly, drain-source on-resistance × gate-drain charge is reduced by approximately 52% compared to Toshiba’s conventional generation DTMOSIV-H series products with the same drain-source voltage rating. This means the DTMOSVI series, including the TK024N60Z1, offers a better trade-off between conduction loss and switching loss, which helps improve the efficiency of switched-mode power supplies.
To further improve power supply efficiency, Toshiba offers tools that support circuit design for switched-mode power supplies. These include the G0 SPICE model, which quickly verifies circuit function, and the highly accurate G2 SPICE models that reproduce transient characteristics.
The TK024N60Z1 N-channel power MOSFET exemplifies Toshiba’s commitment to continue expanding the DTMOSVI series and support energy conservation by reducing power loss in switched-mode power supplies.
Original – Toshiba
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SemiQ Inc has announced a family of three 1200V SiC full-bridge modules, each integrating two of the company’s rugged high-speed switching SiC MOSFETs with reliable body diode. The modules have been developed to simplify the development of photovoltaic inverters, energy storage, battery charging and other high-frequency DC applications.
Available in 18, 38 and 77mΩ (RDSon) variants, the modules have been tested at voltages exceeding 1350V and deliver a continuous drain current of up to 102A, a pulsed drain current of up to 250A and a power dissipation of up to 333W.
Operational with a junction temperature of up to 175oC, the rugged B2 modules have exceptionally low switching losses (EON 0.13mJ, EOFF 0.04mJ at 25oC – 77mΩ module), low zero-gate voltage drain/gate source leakage (0.1µA/1nA – all modules) and low junction to case thermal resistance (0.4oC per watt – 18mΩ module).
“By integrating high-speed SiC MOSFETs with exceptional performance and reliability, our new QSiC 1200V family of full-bridge modules sets a new standard for power density and efficiency in demanding DC applications. This family of modules simplifies system design, and enables faster time-to-market for next-generation solar, storage, and charging solutions,” said Seok Joo Jang, Director of Module Engineering at SemiQ.
Available immediately, the modules can be mounted directly to a heat sink, are housed in a 62.8 x 33.8 x 15.0mm package (including mounting plates) with press fit terminal connections and split DC negative terminals.
Original – SemiQ
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Infineon Technologies AG has made significant progress on its 200 mm silicon carbide (SiC) roadmap. The company will already release the first products based on the advanced 200 mm SiC technology to customers in Q1 2025. The products, manufactured in Villach, Austria, provide first-class SiC power technology for high-voltage applications, including renewable energies, trains, and electric vehicles. Additionally, the transition of Infineon’s manufacturing site in Kulim, Malaysia, from 150-millimeter wafers to the larger and more efficient 200-millimeter diameter wafers is fully on track. The newly built Module 3 is poised to commence high-volume production aligned with market demand.
“The implementation of our SiC production is progressing as planned and we are proud of the first product releases to customers,” said Dr. Rutger Wijburg, Chief Operations Officer of Infineon. “By ramping up SiC production in Villach and Kulim in phases, we are improving cost-efficiency and continuing to ensure product quality. At the same time, we are making sure our manufacturing capacities can meet the demand for SiC-based power semiconductors.”
SiC semiconductors have revolutionized high-power applications by switching electricity even more efficiently, demonstrating high reliability and robustness under extreme conditions, and by making even smaller designs possible. Infineon’s SiC products let customers develop energy-efficient solutions for electric vehicles, fast charging stations and trains as well as renewable energy systems and AI data centers.
The release to customers of the first SiC products based on the 200-millimeter wafer technology marks a substantial step forward in Infineon’s SiC roadmap, with a strong focus on providing customers with a comprehensive portfolio of high-performance power semiconductors that promote green energy and contribute to CO 2 reduction.
As “Infineon One Virtual Fab” for highly innovative wide-bandgap (WBG) technologies, Infineon’s production sites in Villach and Kulim share technologies and processes which allow for fast ramping and smooth and highly efficient operations in SiC and gallium nitride (GaN) manufacturing. The 200-millimeter SiC manufacturing activities now add to Infineon’s strong track record of delivering industry-leading semiconductor technology and power system solutions and strengthen the company’s technology leadership across the entire spectrum of power semiconductors, in silicon as well as in SiC and GaN.
Original – Infineon Technologies
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The electronics industry is experiencing a significant shift towards more compact and powerful systems. To support this trend and further drive innovation at the system level, Infineon Technologies AG is expanding its portfolio of discrete CoolSiC™ MOSFETs 650 V with two new product families housed in Q-DPAK and TOLL packages.
These diverse product families, with top- and bottom-side cooling, are based on the CoolSiC™ Generation 2 (G2) technology and offer significantly improved performance, reliability, and ease of use. The product families target high- and medium-power switched-mode power supplies (SMPS) including AI servers, renewable energy, chargers for electric vehicles, e-mobility and humanoid robots, televisions, drives and solid-state circuit breakers.
The TOLL package offers outstanding Thermal Cycling on Board (TCoB) capability, enabling compact system designs by reducing the printed circuit board (PCB) footprint. When used in SMPS, it can also reduce system-level manufacturing costs. The TOLL package now fits an extended list of target applications, enabling PCB designers to further reduce costs and better meet market demands.
The introduction of the Q-DPAK package complements the ongoing development of Infineon’s new family of Topside Cooled (TSC) products, which includes CoolMOS™ 8, CoolSiC™, CoolGaN™ and OptiMOS™. The TSC family enables customers to achieve excellent robustness with maximum power density and system efficiency at low cost. It also enables direct heat dissipation of 95 percent, allowing the use of both sides of the PCB for better space management and reduction of parasitic effects.
The CoolSiC™ MOSFETs 650 V G2 in TOLL are now available in R DS(on) from 10 to 60 mΩ, while the Q-DPAK variant is available in 7, 10, 15 and 20 mΩ.
Original – Infineon Technologies
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SemiQ Inc has announced the QSiC 1200V MOSFET, a third-generation SiC device that shrinks the die size while improving switching speeds and efficiency.
The device is 20% smaller versus QSiC’s second-generation SiC MOSFETs and has been developed to increase performance and cut switching losses in high-voltage applications. SemiQ is targeting a diverse range of markets including EV‑charging stations, solar inverters, industrial power supplies and induction heating.
It will be on display for the first time at the Applied Power Electronics Conference (APEC), on March 16-20, 2025.
In addition to having a drain-to-source voltage (VDS) of 1200 V, the MOSFET reduces total switching losses to 1646 µJ and has a low on-resistance (RDS,on) of 16.1 mΩ. It is available as a bare die or in a four-pin TO-247 4L discrete package measuring 31.4 x 16.1 x 4.8 mm, which includes a reliable body diode and a driver-source pin for gate driving.
High-quality Known Good Die (KGD) testing has been conducted using UV tape and Tape & Reels, with all parts undergoing testing and verification at voltages exceeding 1400V, as well as being avalanche tested to 800 mJ. Reliability is further improved through the device’s 100% wafer-level gate oxide burn-in screening and 100% UIL testing of discrete packaged devices.
The device has been developed to have a low reverse recovery charge (QRR 470 nC) and lower capacitance, improving switching speed, switching losses, EMI and overall efficiency; to be easy to parallel; and with a longer creepage distance (9 mm), improving electrical insulation, voltage tolerance and reliability.
Dr. Timothy Han, President at SemiQ said: “The move to Gen3 SiC further increases the benefits of SiC MOSFETs over IGBTs. These devices not only deliver vastly improved performance, but cut die size and cost versus previous generations. As a result, the launch of the QSiC 1200V opens the technology, and its benefits, to a far greater range of applications. The device delivers industry leading performance figures, notably on gate threshold voltage, and we’re delighted to be demonstrating this first at APEC.”
The QSiC 1200V MOSFETs has a continuous operational and storage temperature of -55oC to 175oC. It has a recommended operational gate-source voltage of -4/18 V, with a VGSmax of -8/22 V, and a power dissipation of 484 W (core and junction temperature 25oC).
For static electrical characteristics, the device has a junction-to-case thermal resistance of 0.26oC per watt (40oC per watt junction to ambient). Its Zero gate voltage drain current is 100 nA, with a gate-source voltage current of 10 nA. Its AC characteristics include a turn-on delay time of 21 ns with rise time of 25 ns; its turn-off delay time is 65 ns with a fall time of 20 ns.
An increased range of resistances is available in bare-die and TO-247 4L packages with the following options:
- 16 mΩ: GP3T016A120X / GP3T016A120H
- 20 mΩ: GP3T020A120X / GP3T020A120H
- 40 mΩ: GP3T040A120X / GP3T040A120H
- 80 mΩ: GP3T080A120X / GP3T040A120H
Both the 16 mΩ (AS3T016A120X / AS3T016A120H) and 40 mΩ (AS3T040A120X / AS3T040A120H) options have been qualified for Automotive Applications Product Validation according to AEC-Q101.
The SemiQ QSiC 1200V will be on display at the Georgia World Congress Center in Atlanta, from March 16 to 20, 2025. Visitors to SemiQ’s booth #1348 will have the opportunity to explore the new third-generation MOSFETs.
Original – SemiQ
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MCC Semi announced four new components in advanced P-channel MOSFET lineup. Supporting -100V applications from battery protection to motor drives and high-side switches, MCAC085P10, MCAC055P10, MCU055P10, and MCU085P10 are made for reliability in challenging environments.
With a maximum on-resistance of 55mΩ or 85mΩ, these MOSFETs improve overall system efficiency while reducing power dissipation. Leveraging trench technology and superior thermal performance, these versatile solutions provide engineers with high power density in a compact DFN5060 or DPAK package.
New P-channel MOSFETs are the obvious choice for unmatched performance and effective power management.
Features & Benefits:
- Trench MOSFET Technology: Enhances current capacity and reduces on-resistance
- Low On-Resistance: A maximum RDS(on) of 55mΩ or 85mΩ minimizes power consumption and boosts efficiency
- Low Conduction Losses: Reduce heat generation while improving overall system operation
- Excellent Thermal Performance: Safeguards device from overheating during use in high-temp scenarios
- High Power Density: Available in compact DFN5060 and DPAK package options
Original – Micro Commercial Components
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FORVIA HELLA, an international automotive supplier, has selected the new CoolSiC™ Automotive MOSFET 1200 V from Infineon Technologies AG for its next generation 800 V DCDC charging solution. Designed for on-board charger and DCDC applications in 800 V automotive architectures, Infineon’s CoolSiC MOSFET comes in a Q-DPAK package. The device uses top-side cooling (TSC) technology, which enables excellent thermal performance, easier assembly and lower system costs.
“We are excited to continue our partnership with FORVIA HELLA, leveraging our high-efficiency SiC products based on TSC packages,” said Robert Hermann, Vice President of Automotive High-Voltage Chips and Discretes at Infineon. “We are continuously working to take e-mobility to the next level by providing state-of-the-art SiC solutions that meet the automotive industry’s stringent requirements for performance, quality, and system cost.”
“Our customers are at the center of our efforts. That is why we have chosen Infineon’s CoolSiC Automotive MOSFET 1200 V for our next generation of DCDC converters”, said Guido Schütte, Member of the Electronics Executive Board at FORVIA HELLA. “Together with Infineon, we will continue to offer sustainable and innovative products and comprehensive services that exceed our customers’ expectations and drive the development of advanced mobility.”
Infineon’s new CoolSiC Automotive MOSFET 1200 V in the Q-DPAK package is based on Gen1p technology and offers a drive voltage in the range of V GS(off)= 0 V and V GS(on)= 20 V. The 0 V turn-off enables unipolar gate control, which simplifies design by reducing the number of components in the PCB.
With a creepage distance of 4.8 mm, the package achieves an operating voltage of over 900 V without the need for additional insulation coating. Compared to backside cooling, the TSC technology ensures optimized PCB assembly, reducing parasitic effects and resulting in significantly lower leakage inductances. As a result, customers benefit from lower package parasitics and lower switching losses. Heat dissipation is further improved by diffusion soldering the chip with .XT technology.
Original – Infineon Technologies
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Wolfspeed, Inc. introduced its new Gen 4 technology platform, which enables design rooted in durability and efficiency, all while reducing system cost and development time. Engineered to simplify switching behaviors and design challenges commonly experienced in high-power designs, Gen 4 charts a long-term roadmap across Wolfspeed’s product categories, including power modules, discrete components, and bare die products. These products are currently available in the 750V, 1200V and 2300V classes.
“We understand that each application’s design comes with a unique set of requirements,” said Jay Cameron, senior vice president of Wolfspeed power products. “From its inception, our goal for Gen 4 has been to improve overall system efficiency in real-world operating environments, with a focus on delivering maximum performance at the system level. Gen 4 enables design engineers to create more efficient, longer-lasting systems that perform well in tough operating environments at a better overall system cost.”
Silicon carbide technology is one of the fastest growing components of both the power device market and the greater semiconductor industry. A superior alternative to silicon, silicon carbide is ideal for high power applications – such as EV powertrains, e-mobility, renewable energy systems, battery energy storage systems, and AI data centers – that unlocks improved performance and lower system costs.
As the U.S. and the globe pursue more efficient and environmentally friendly solutions to meet the world’s ever-increasing need for high-voltage energy sources, it is crucial that the U.S. continue to make strategic investments to cement its technological dominance, while continuing to spur American innovation in critical technologies.
Wolfspeed is the only silicon carbide producer with both silicon carbide material and silicon carbide device fabrication facilities based in the United States, a factor that is becoming increasingly important under the new U.S. Administration’s increased focus on national security and investment in U.S. semiconductor production.
“Innovative technology unlocks business opportunity,” said Devin Dilley, president and chief product officer, EPC Power, a U.S.-based utility-scale inverter manufacturer. “Wolfspeed’s new Gen 4 SiC technology is enabling EPC Power to make a paradigm shift in how energy is created and stored globally.”
“As the world-leader in silicon carbide technology, based on American IP and delivered through U.S.-based fabrication facilities, Wolfspeed has been relentless in our drive to continue to innovate and bring our silicon carbide solutions to more and more industries with increasingly challenging use cases,” said Wolfspeed Executive Chairman, Tom Werner. “Our Gen 4 platform will be delivered via our highly efficient 200mm wafers, which will enable us to deliver products on a scale and level of yield not seen in this industry before.”
Wolfspeed’s Gen 4 platform was designed to comprehensively improve system efficiency and prolong application life, even in harshest of environments, while helping to reduce system cost and development time. The technology will deliver significant performance enhancements for designers of high-power automotive, industrial, and renewable energy systems, with key benefits including:
- Holistic System Efficiency: Delivering up to a 21% reduction in on-resistance at operating temperatures with up to 15% lower switching losses.
- Durability: Ensuring reliable performance, including a short-circuit withstand time of up to 2.3 µS to provide additional safety margin.
- Lower System Cost: Streamlining design processes to reduce system costs and development time.
Learn more in Wolfspeed’s white paper “Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications”.
Wolfspeed’s Gen 4 products are available in 750V, 1200V and 2300V nodes, with options for power modules, discrete components, and bare die products. New product introductions, including additional footprints and RDSON ranges, will be available throughout 2025 and early 2026.
Original – Wolfspeed
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SemiQ Inc. announced a family of 1700 V SiC MOSFETs designed to meet the needs of medium-voltage high power conversion applications, such as photovoltaic and wind inverters, energy storage, EV and road-side charging, uninterruptable power supplies, and induction heating/welding.
The high-speed QSiC™ 1700 V switching planar D-MOSFETs enable more compact system designs at large scale, with higher power densities and lower system costs. They feature a reliable body diode, capable of operation at up to 175oC, with all components tested to beyond 1900 V, and UIL avalanche tested to 600 mJ.
The QSiC 1700 V devices are available in both a bare die form (GP2T030A170X), and as a 4-pin TO-247-4L-packaged discrete (GP2T030A170H) with drain, source, driver source and gate pins. Both are also available in an AEC-Q101 automotive qualified version (AS2T030A170X and AS2T030A170H).
The MOSFETs deliver low switching and conduction losses, low capacitance and feature a rugged gate oxide for long-term reliability, with 100 percent of components undergoing wafer-level burn in (WLBI) to screen out potentially weak oxide devices.
SemiQ has also announced a series of three modules as part of the family to simplify system design, this includes a standard-footprint 62 mm half-bridge module housed in an S3 package with an AIN insolated baseplate, as well as two SOT-227 packaged power modules.
The QSiC 1700 V series’ bare die MOSFET comes with an aluminum (Al) top side and nickel/silver (Ni/Ag) bottom side. Both it and the TO-247-4L packaged device have a power dissipation of 564 W, with a continuous drain current of 83 A (at 25oC, 61A at 100oC) and a pulsed drain current of 250 A (at 25oC). They also feature a gate threshold voltage of 2.7 V (at 25oC, 2.1 V at 125oC), an RDSON of 31 mΩ (at 25oC, 57 mΩ at 125oC), a low (10n A) gate source leakage current and a fast reverse recovery time (tRR) of 17 ns. The TO-247-4L package has a junction to case thermal resistance of 0.27oC per watt.
The two 4-pin power modules are housed in a 38.0 x 24.8 x 11.7 mm SOT-227 design and deliver an increased power dissipation of 652 W with an increased continuous drain current of 123 A (at 25oC – GCMX015A170S1E1) and 88 A (at 25oC GCMX030A170S1-E1). In addition to low switching losses, both modules have a low junction-to-case thermal resistance of 0.19oC and 0.36oC per watt and feature an easy-mount design for direct mounting of the isolated package to a heatsink.
The half-bridge module is housed in a 61.4 x 106.4 x 30.9 mm 9-pin S3 package and delivers a power dissipation of 2113 W with a continuous drain current of 397 A and a pulsed drain current of 700 A. In addition to low switching losses, the GCMX005A170S3B1-N module has a junction to case thermal resistance of 0.06oC per watt.
Original – SemiQ
