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Innoscience has announced its collaboration with NVIDIA to support the implementation of the 800 VDC rack power architecture, a major breakthrough in power distribution for AI data centers. Similar to the transition from 400 V to 800 V systems in electric vehicles, this new architecture dramatically increases efficiency, power density, and sustainability by reducing current flow sixteenfold compared to traditional 48 V systems. The result is significantly lower resistive losses, reduced copper consumption, and lower overall CO₂ emissions.
Current 48 V data center systems are approaching physical and thermal limits, with high copper demand and nearly half of total power lost to heat dissipation. The 800 VDC system overcomes these constraints, enabling scalability from kilowatt to megawatt levels for future AI clusters with hundreds of GPUs. However, achieving such high power density and efficiency—especially converting from 800 V down to 1 V—requires advanced semiconductor technologies such as gallium nitride (GaN).
Innoscience’s third-generation GaN devices are designed to meet the demanding requirements of this new power paradigm. Operating at switching frequencies near 1 MHz, these devices significantly reduce the size of magnetic and capacitive components while improving overall system efficiency.
Key advantages of Innoscience’s third-generation GaN include:
- Up to 80% reduction in driver losses and 50% lower switching losses compared to SiC devices, yielding a 10% decrease in total system power loss.
- Twice the power density on the 54 V output side, requiring only 16 GaN devices instead of 32 Si MOSFETs for equivalent conduction performance.
- 70% reduction in switching losses and a 40% increase in power output compared to silicon-based architectures.
- Scalability to support next-generation GPU platforms with improved dynamic response and reduced capacitor costs.
As the world’s only integrated GaN manufacturer (IDM) producing devices from 1200 V to 15 V, Innoscience offers a complete GaN-based conversion chain from 800 V to 1 V, delivering an all-GaN power solution across every stage of the data center power architecture.
Innoscience’s GaN devices are also proven for long-term reliability, passing extended high-temperature and stress tests, including 2000-hour dynamic HTOL and 175°C endurance validation. These tests confirm datacenter-grade durability with expected lifetimes exceeding 20 years.
With its third-generation GaN technology and collaboration with NVIDIA, Innoscience is helping drive the shift from kilowatt to megawatt AI racks—ushering in a new era of ultra-efficient, high-performance, and sustainable AI computing infrastructure.
Original – Innoscience Technology
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Innoscience, United Automotive Electronic Systems (UAES), and NOVOSENSE Microelectronics have entered into a strategic cooperation agreement to jointly develop next-generation intelligent integrated Gallium Nitride (GaN) products for new energy vehicles (NEVs). The collaboration aims to enhance reliability, efficiency, and power density in automotive power electronics, paving the way for wider GaN adoption across the industry.
GaN: Transforming Automotive Power Systems
Gallium Nitride is emerging as a key enabler of automotive electrification. Compared to traditional silicon-based devices, GaN offers superior switching performance, higher power density, and greater efficiency, allowing for smaller, lighter, and more energy-efficient vehicle systems. These advantages directly address the industry’s growing focus on electrification, lightweight design, and sustainability.Combining Expertise Across the Value Chain
Through joint research, development, and validation, the three companies will address challenges related to performance, reliability, and cost in GaN-based automotive systems. Innoscience brings world-class GaN device technology, UAES contributes extensive system integration and application expertise, and NOVOSENSE adds advanced analog and mixed-signal IC design capabilities. Together, they aim to deliver commercially viable, high-performance GaN solutions tailored to the evolving needs of NEV manufacturers.Dr. Jingang Wu, CEO of Innoscience, emphasized that the collaboration aligns device innovation with real-world automotive requirements, enabling GaN’s full potential in vehicle electrification. Dr. Xiaolu Guo, Deputy General Manager of UAES, highlighted the importance of combining system and component-level expertise to accelerate GaN industrialization. NOVOSENSE founder and CEO Shengyang Wang noted that this alliance strengthens cooperation across the entire value chain, ensuring both technological advancement and market impact.
Accelerating the Future of Electrified Mobility
This strategic partnership represents a significant step forward for the automotive semiconductor industry. By leveraging complementary strengths, Innoscience, UAES, and NOVOSENSE are creating a powerful ecosystem to advance GaN innovation, strengthen the NEV value chain, and accelerate the transition toward more efficient and sustainable electric mobility solutions.Original – Innoscience Technology
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InnoScience announced its vision for the “Chip Era” of power electronics. Speaking at the IPF 2025 Conference, Chairperson Dr. Luo Weiwei highlighted how gallium nitride (GaN) is transforming the industry through higher efficiency, automation, and standardization.
GaN devices deliver up to 15x lower turn-off losses and 3x lower turn-on losses versus silicon, enabling standardized zero-voltage switching designs with superior efficiency and consistency. By integrating passive components onto PCBs, GaN systems also unlock automated manufacturing and predictable EMI performance, reducing cost wile improving reliability.
“GaN allows us to move from craftsmanship to science, from manual assembly to automation, and from fragmentation to standardization,” said Dr Luo. “This marks the arrival of the chip era for power electronics.”
GaN adoption is expanding across AI servers and data centers, electric vehicles, and robotics, where it delivers higher density, lower energy uses, and enhanced, precision. With 8-inch GaN-on-Si mass production, fully integrated design-to-packaging capabilities and partnerships with leading global technology companies, InnoScience is strategically positioned to drive the compound semiconductor revolution.
Original – Innoscience Technology
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Efficient Power Conversion Corporation (EPC) announced that the Beijing IP Court has denied the appeal filed by Innoscience (Suzhou) Technology Co., Ltd. (Innoscience), thereby reaffirming the validity of EPC’s Chinese Patent No. ZL201080015425.X, titled “Compensated gate MISFET and method for fabricating the same” (the Compensated Gate Patent). This latest decision by the Beijing IP Court further strengthens EPC’s valuable intellectual property portfolio and reinforces its position as a pioneer in enhancement-mode GaN semiconductor devices.
Two of EPC’s patents covering enhancement-mode GaN field effect transistors (FETs) and their fabrication had been challenged by Innoscience (Suzhou) in China. The China National Intellectual Property Administration (CNIPA) had previously validated both patents in April and May 2024, but Innoscience requested reconsideration of the decision concerning the Compensated Gate Patent in (case number: (2024）京73 行初15061 号 ((2004) Jing73XingChu NO.15061)).
“EPC’s innovations in GaN power devices reflect nearly 20 years of research and development,” said Alex Lidow, CEO and Co-founder of EPC. “We welcome the Beijing IP Court’s decision as confirmation of the strength of our intellectual property.”
Notably, EPC continues to benefit from a decision by the U.S. International Trade Commission, which ruled that Innoscience infringed EPC’s intellectual property. That ruling, which remains in full force and effect, led to an exclusion order barring the importation of infringing Innoscience products into the United States.
EPC’s GaN power transistors deliver superior efficiency, faster switching speeds, and smaller footprints compared to legacy silicon devices. The validated patents are widely regarded as critical to the structure and performance of modern enhancement-mode GaN FETs, in which power next-generation systems across AI servers, e-mobility, robotics, rapid charging, and autonomous platforms.
Original – Efficient Power Conversion
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As large AI models and high-performance computing place higher demands on power supply systems, Innoscience announced a collaboration with NVIDIA, a global leader in AI technology, to jointly promote the large-scale implementation of an 800 VDC power architecture in AI data centers.
NVIDIA’s 800 VDC architecture is the latest generation of power systems specifically designed to efficiently power future megawatt-scale computing infrastructure. Compared to traditional 54 V power systems, the 800 VDC architecture offers significant advantages in system efficiency, heat dissipation, and reliability, enabling it to support an 100x to 1000x increase in AI computing power.
As the world’s leading GaN IDM, Innoscience’s third-generation GaN devices offer exceptional high frequency, high efficiency, and high power density. They provide NVIDIA’s 800 VDC architecture with a full-link GaN power supply solution, from 800 V input to GPU terminals, covering 15 V to 1200 V. With the deep integration of 800 VDC power architecture and GaN technology, AI data centers will achieve a quantum leap from kilowatts to megawatts in the coming years, ushering in an era of more efficient, reliable, and greener AI computing.
Original – Innoscience Technology
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The District Court Munich, Germany (Landgericht München I) ruled in favor of Infineon Technologies AG in a first instance patent infringement case concerning gallium nitride (GaN) technology between Infineon and Innoscience. The case centers on the unauthorized use of Infineon’s patented GaN technologies by Innoscience. GaN plays a pivotal role in enabling high-performance and energy-efficient power systems in a broad range of applications, including renewable energy systems, data centers, industrial automation, and electric vehicles (EVs).
The Munich court’s decision was issued in a patent infringement case brought by Infineon against Innoscience. The Munich District Court found that Infineon´s patent was infringed by GaN products that Innoscience is offering in Germany. The decision in particular prohibits Innoscience from manufacturing, selling, or marketing the infringing products in Germany. Additionally, the decision requires Innoscience to pay damages to Infineon.
The decision of the District Court underscores the value of Infineon’s contributions to GaN technology and its ongoing commitment to ensuring fair competition in the market. “The ruling is a testament to the strength of Infineon’s intellectual property and confirms Infineon’s commitment to vigorously defend its intellectual property against infringements,” says Johannes Schoiswohl, Senior Vice President and Head of Infineon’s GaN Systems Business Line.
Infineon continuously strengthens its position as a leading integrated device manufacturer (IDM) in the GaN market with the industry’s broadest IP portfolio, comprising approximately 450 GaN patent families. The company remains dedicated to fostering innovation and advancing semiconductor technology to address the world’s most pressing challenges, from decarbonization to digital transformation.
Original – Infineon Technologies
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Innoscience and United Automotive Electronics (UAES) announced the establishment of a joint laboratory to develop advanced power electronics systems for new energy vehicles using the advantages of GaN technology in size, weight, and efficiency. The two parties held a joint laboratory unveiling ceremony at UAES (Suzhou R&D Center).
Due to the advantages of GaN technology over legacy silicon-based power devices, GaN power devices are widely used in electric vehicle, renewable energy systems, and AI data center power systems. Compared with traditional silicon, GaN-based converters and inverters can reduce power losses by up to 10 times, significantly improving efficiency and power density, and reducing system BOM costs, thus achieving smaller size and lighter weight, and reducing carbon dioxide emissions.
Dr. Xiaolu Guo, Deputy General Manager of United Electronics, said: “We are pleased to work with Innoscience, which has been committed to the mass production of GaN technology since 2015. This cooperation will strengthen the cooperation between the two parties, including senior management. We have developed a high power density on-board charger based on GaN. We look forward to continuing to strengthen our cooperation through this laboratory, boosting the innovation of GaN OBC solution.”
Dr. Jingang Wu, CEO of Innoscience, said: “We are pleased to establish a joint laboratory with UAES, a global leader in automotive electronics and a technology leader in wide bandgap power device applications. Innoscience has developed the industry’s highest performance and highest reliability GaN process, covering a voltage range from 15V to 1200V, and has the world’s largest 8-inch production capacity. We look forward to working with UAES to fully leverage our strengths in GaN and contribute to GaN-based electric vehicle technology innovation.”
Due to its material properties, GaN can achieve new standards of system performance in power conversion, significantly reducing losses, thereby improving efficiency, reducing volume and weight, and thus reducing system costs. The application range of GaN power devices has far exceeded consumer electronics, and has been mass produced in data centers, industrial and photovoltaic equipment, and has been used in electric vehicle power electronics systems.
Original – Innoscience Technology
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STMicroelectronics and Innoscience announced the signature of an agreement on GaN technology development and manufacturing, leveraging the strengths of each company to enhance GaN power solutions and supply chain resilience.
The companies have agreed on a joint development initiative on GaN power technology, to advance the promising future of GaN power for consumer electronics, datacenters, automotive and industrial power systems and many more applications in the coming years. In addition, the agreement allows Innoscience to utilize ST’s front-end manufacturing capacity outside China for its GaN wafers, while ST can leverage Innoscience’s front-end manufacturing capacity in China for its own GaN wafers. The common ambition is for each company to expand their individual offering in GaN with supply chain flexibility and resilience to cover all customers’ requirements in a wide range of applications.
Marco Cassis, President, Analog, Power & Discrete, MEMS and Sensors of STMicroelectronics declared: “ST and Innoscience are both Integrated Device Manufacturers, and with this agreement we will leverage this model to the benefit of our customers globally. First, ST will be accelerating its roadmap in GaN power technology to complement its silicon and silicon carbide offering. Second, ST will be able to leverage a flexible manufacturing model to serve customers globally.”
Dr. Weiwei Luo, Chairman and Founder of Innoscience, stated “GaN technology is essential to improve electronics, creating smaller and more efficient systems which save electric power, lower cost, and reduce CO2 Emissions. Innoscience pioneered mass production of 8-inch GaN technology and has shipped over 1 billion GaN devices into multiple markets, and we are very excited to move into strategic collaboration with ST. The joint collaboration between ST and Innoscience will further expand and accelerate the adoption of GaN technology. Together the teams at Innoscience and ST will develop the next generations of GaN technology”.
GaN power devices leverage fundamental material properties that enable new standards of system performance in power conversion, motion control, and actuation, offering significantly lower losses, which allows for enhanced efficiency, smaller size, and lighter weight, thus reducing the overall solution cost and carbon footprint; these devices are rapidly being adopted in consumer electronics, data center and industrial power supplies, and solar inverters, and are being actively designed into next-generation EV powertrains due to their substantial size and weight reduction benefits.
Original – STMicroelectronics
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Innoscience (Suzhou) Technology Holding Co., Ltd. announced that it achieved a decisive victory in the patent dispute initiated by Efficient Power Conversion Corporation (“EPC”), by securing a final decision from the U.S. Patent and Trademark Office (“USPTO”) invalidating the claims of the only patent remaining in the dispute launched by EPC in the US International Trade Commission (“ITC”).
On March 18, 2025, the USPTO issued the final decision finding all challenged claims of EPC’s U.S. Patent No.8,350,294 (“the ’294 patent”) are invalid and should be cancelled. This decision removes the entire foundation of EPC’s false patent infringement claim against Innoscience and marks that Innoscience has achieved a complete victory in the two-year long meritless patent war launched by EPC.
In May 2023, EPC launched a lawsuit against Innoscience at the ITC alleging infringement of EPC’s ’294 patent and three other EPC patents. During the litigation, EPC withdrew two of the four patents, and a third patent was found by the ITC to not be infringed. The ITC, however, determined that partial asserted claims of the ’294 patent are valid and infringed.
Innoscience disagrees with the ITC’s ruling on the validity and infringement of the ’294 patent and has appealed it to the U.S. Court of Appeals for the Federal Circuit on January 31, 2025. Innoscience believes that the ITC made errors in its ruling of the ’294 patent and thus should be overturned.
The latest final decision by the USPTO shows that the ITC’s determination of the ’294 patent is flawed. It is a vindication that EPC’s allegations against Innoscience are completely baseless. In its final decision, the USPTO agreed that all the asserted claims of the ’294 patent are invalid because they merely pertain to old gallium nitride (“GaN”) technology that had existed in the prior art for a long time before the patents were filed.
With this final win at the USPTO, Innoscience has knocked out the only remaining patent in the ITC case and proved that EPC’s allegations are completely unfounded. Innoscience is ready to dust off the discord fabricated by EPC and focus its effort on developing and providing top-notch GaN-based power solutions for its customers worldwide.
Original – Innoscience Technology
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InnoScience (Suzhou) Technology Holding Co., Ltd. announced that it has initiated legal action to protect its intellectual property rights related to cutting-edge gallium nitride (GaN) semiconductor technologies. The Company, along with its wholly-owned subsidiary InnoScience (Suzhou) Semiconductor Co., Ltd. (“InnoScience Suzhou,” collectively referred to as the “Plaintiffs”), has filed complaints with the Intermediate People’s Court of Suzhou City, Jiangsu Province, PRC.
The lawsuits (case numbers (2024) Su 05 Minchu No. 1430 and (2024) Su 05 Minchu No. 1431) allege patent infringement against Infineon Technologies (China) Co., Ltd., Infineon Technologies (Wuxi) Co., Ltd., and Suzhou Chipswork Electronics Technologies Co., Ltd. (collectively, the “Defendants”). The patents in question, 202311774650.7 and 202211387983.X, cover innovative GaN power device designs and semiconductor manufacturing methods, for which InnoScience Suzhou is the patentee, with the Company holding the appropriate licenses.
Original – InnoScience Technology
