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Suzhou Inovance Automotive Systems Co., Ltd. and Innoscience (Suzhou) Technology Co., Ltd. announced that their next-generation 6.6kW on-board charger system, built on 650V GaN devices, has been successfully integrated into Changan vehicles. The result is a step change in charging efficiency and power density, raising the bar for automotive power electronics.
Inovance Automotive’s two-in-one architecture combines the on-board charger and DC-DC converter in a single unit. By pairing a globally optimized efficiency design with Innoscience’s 650V high-voltage GaN devices—known for ultra-low switching loss and high-frequency performance—the system delivers measurable gains:
· 30% increase in power density, reaching 4.8 kW/L
· Over 2% improvement in overall efficiency compared with similar products
· 20% reduction in system weight, supporting industry goals for higher efficiency and lightweight designThe jointly developed 6.6kW GaN OBC solution also improves vehicle packaging by saving space and enhancing integration flexibility at the platform level. Higher conversion efficiency shortens charging time for drivers and contributes to meaningful energy savings, ultimately supporting extended driving range.
Deploying this GaN-based OBC system in Changan vehicles marks a milestone for GaN in automotive power systems—a breakthrough that strengthens both Inovance Automotive and Innoscience as they expand in the EV sector. The companies plan to continue their collaboration to accelerate the shift toward higher efficiency and greater sustainability across next-generation electric vehicles.
Original – Innoscience Technology
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The U.S. International Trade Commission (ITC) has issued a preliminary ruling finding that Innoscience has violated one of the gallium nitride (GaN) technology patents held by Infineon Technologies AG. The ITC also confirmed the legal validity of both patents asserted by Infineon in the case.
The dispute centers on Innoscience’s alleged unauthorized use of Infineon’s patented GaN technologies. A final determination by the ITC is expected on April 2, 2026. Should the preliminary ruling be upheld, it will result in an import ban of the allegedly infringing Innoscience products into the United States.
“This ruling is another testament to the strength of Infineon’s intellectual property and confirms our commitment to vigorously defend our patent portfolio against infringements and ensuring fair competition in the market,” said Johannes Schoiswohl, Senior Vice President and Head of Infineon’s GaN Systems Business Line. “We remain dedicated to fostering innovation and advancing semiconductor technology to address the world’s most pressing challenges, from decarbonization to digital transformation.”
The decision in the U.S. adds to a series of favorable outcomes for Infineon in similar disputes. In a separate case in Germany, the German patent office recently upheld the validity of an Infineon GaN patent in a slightly amended form, and Infineon is pursuing infringement claims related to that patent in the Munich District Court. Additionally, in August 2025, the Munich District Court I ruled that another Infineon GaN patent had been infringed by Innoscience.
Infineon is a leading integrated device manufacturer in the GaN market and holds one of the industry’s most extensive intellectual property portfolios, with approximately 450 GaN patent families. GaN is a critical technology for high-performance, energy-efficient power systems used in applications ranging from renewable energy and AI data centers to industrial automation and electric vehicles.
By mastering all three essential materials in power electronics—silicon (Si), silicon carbide (SiC), and gallium nitride (GaN)—Infineon continues to play a pivotal role in advancing semiconductor innovation to support the global push for energy efficiency and sustainability.
Original – Infineon Technologies
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onsemi has signed a memorandum of understanding (MoU) with Innoscience to explore a strategic collaboration focused on expanding the production of gallium nitride (GaN) power devices. The agreement leverages Innoscience’s proven 200mm GaN-on-silicon process and high-volume manufacturing capabilities, alongside onsemi’s strengths in system integration, drivers, and packaging, with the shared goal of accelerating the delivery of cost-effective, energy-efficient GaN solutions to a global market.
The collaboration aims to address the growing demand for high-efficiency power systems across industrial, automotive, telecom, consumer, and AI data center applications by combining onsemi’s GaN power solutions with Innoscience’s manufacturing scale. Initial focus will be on the low and medium-voltage GaN range (40–200V), with future development plans targeting a global GaN power device market projected to reach $2.9 billion by 2030.
Key benefits of the collaboration include:
- Expanded GaN Portfolio: The partnership supports the extension of onsemi’s low and medium-voltage GaN product line.
- Scalable Manufacturing: Access to Innoscience’s high-volume 200mm GaN-on-silicon capacity enables true mass-market deployment.
- System-Level Innovation: Combines advanced packaging, drivers, and integration expertise to support rapid time-to-market and cost-effective system design.
- Market Reach: Enables high-efficiency, compact power solutions for motor drives, EV converters, DC-DC power supplies, telecom infrastructure, and data centers.
Antoine Jalabert, Vice President of Corporate Strategy at onsemi, noted: “As power demands rise across every sector, GaN offers higher efficiency, smaller size, and lower energy losses compared to other materials. Through a collaboration with Innoscience, we expect to access the industry’s largest GaN production footprint and quickly scale our offerings to enable broader adoption in mainstream applications.”
Yi Sun, Senior Vice President of Product & Engineering at Innoscience, added: “GaN technology is essential to building more efficient power systems and reducing global energy consumption. We are excited to explore this collaboration with onsemi to accelerate GaN adoption and establish a platform for integrated system development.”
onsemi expects to begin sampling initial devices in the first half of 2026. This initiative builds upon its comprehensive intelligent power portfolio, which includes silicon, silicon carbide (SiC), and GaN technologies—positioning the company to deliver optimal power systems across next-generation electrified and AI-driven markets.
Original – onsemi
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Innoscience and Allegro MicroSystems have announced a collaborative 4.2kW all-GaN power reference design aimed at meeting the efficiency and density demands of next-generation AI data centers and edge computing platforms.
The solution integrates Innoscience’s proprietary GaN power transistors with Allegro’s AHV85110 isolated gate driver, known for its integrated bias supply and self-powered architecture. This combination enables Titanium-grade efficiency and power densities exceeding 100 W/in³, addressing both performance and compactness requirements in high-power computing environments.
The reference design leverages a fully GaN-based architecture optimized for fast switching and low electromagnetic interference (EMI). The AHV85110 driver’s low common-mode capacitance and integrated power supply contribute to simplified system design, reducing passive component count on the driver board by up to 80% and enabling a 15% reduction in total system components.
This collaboration underscores the growing role of GaN in AI and hyperscale infrastructure, offering benefits in thermal design, board layout, and system integration. With this solution, engineers gain a ready-to-use platform that supports the development of compact, high-efficiency power conversion systems suitable for evolving compute-intensive applications.
The 4.2kW reference design is now available from Innoscience and provides a robust foundation for accelerating development in high-performance power electronics.
Original – Innoscience Technology
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Innoscience has announced its collaboration with NVIDIA to support the implementation of the 800 VDC rack power architecture, a major breakthrough in power distribution for AI data centers. Similar to the transition from 400 V to 800 V systems in electric vehicles, this new architecture dramatically increases efficiency, power density, and sustainability by reducing current flow sixteenfold compared to traditional 48 V systems. The result is significantly lower resistive losses, reduced copper consumption, and lower overall CO₂ emissions.
Current 48 V data center systems are approaching physical and thermal limits, with high copper demand and nearly half of total power lost to heat dissipation. The 800 VDC system overcomes these constraints, enabling scalability from kilowatt to megawatt levels for future AI clusters with hundreds of GPUs. However, achieving such high power density and efficiency—especially converting from 800 V down to 1 V—requires advanced semiconductor technologies such as gallium nitride (GaN).
Innoscience’s third-generation GaN devices are designed to meet the demanding requirements of this new power paradigm. Operating at switching frequencies near 1 MHz, these devices significantly reduce the size of magnetic and capacitive components while improving overall system efficiency.
Key advantages of Innoscience’s third-generation GaN include:
- Up to 80% reduction in driver losses and 50% lower switching losses compared to SiC devices, yielding a 10% decrease in total system power loss.
- Twice the power density on the 54 V output side, requiring only 16 GaN devices instead of 32 Si MOSFETs for equivalent conduction performance.
- 70% reduction in switching losses and a 40% increase in power output compared to silicon-based architectures.
- Scalability to support next-generation GPU platforms with improved dynamic response and reduced capacitor costs.
As the world’s only integrated GaN manufacturer (IDM) producing devices from 1200 V to 15 V, Innoscience offers a complete GaN-based conversion chain from 800 V to 1 V, delivering an all-GaN power solution across every stage of the data center power architecture.
Innoscience’s GaN devices are also proven for long-term reliability, passing extended high-temperature and stress tests, including 2000-hour dynamic HTOL and 175°C endurance validation. These tests confirm datacenter-grade durability with expected lifetimes exceeding 20 years.
With its third-generation GaN technology and collaboration with NVIDIA, Innoscience is helping drive the shift from kilowatt to megawatt AI racks—ushering in a new era of ultra-efficient, high-performance, and sustainable AI computing infrastructure.
Original – Innoscience Technology
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Innoscience, United Automotive Electronic Systems (UAES), and NOVOSENSE Microelectronics have entered into a strategic cooperation agreement to jointly develop next-generation intelligent integrated Gallium Nitride (GaN) products for new energy vehicles (NEVs). The collaboration aims to enhance reliability, efficiency, and power density in automotive power electronics, paving the way for wider GaN adoption across the industry.
GaN: Transforming Automotive Power Systems
Gallium Nitride is emerging as a key enabler of automotive electrification. Compared to traditional silicon-based devices, GaN offers superior switching performance, higher power density, and greater efficiency, allowing for smaller, lighter, and more energy-efficient vehicle systems. These advantages directly address the industry’s growing focus on electrification, lightweight design, and sustainability.Combining Expertise Across the Value Chain
Through joint research, development, and validation, the three companies will address challenges related to performance, reliability, and cost in GaN-based automotive systems. Innoscience brings world-class GaN device technology, UAES contributes extensive system integration and application expertise, and NOVOSENSE adds advanced analog and mixed-signal IC design capabilities. Together, they aim to deliver commercially viable, high-performance GaN solutions tailored to the evolving needs of NEV manufacturers.Dr. Jingang Wu, CEO of Innoscience, emphasized that the collaboration aligns device innovation with real-world automotive requirements, enabling GaN’s full potential in vehicle electrification. Dr. Xiaolu Guo, Deputy General Manager of UAES, highlighted the importance of combining system and component-level expertise to accelerate GaN industrialization. NOVOSENSE founder and CEO Shengyang Wang noted that this alliance strengthens cooperation across the entire value chain, ensuring both technological advancement and market impact.
Accelerating the Future of Electrified Mobility
This strategic partnership represents a significant step forward for the automotive semiconductor industry. By leveraging complementary strengths, Innoscience, UAES, and NOVOSENSE are creating a powerful ecosystem to advance GaN innovation, strengthen the NEV value chain, and accelerate the transition toward more efficient and sustainable electric mobility solutions.Original – Innoscience Technology
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InnoScience announced its vision for the “Chip Era” of power electronics. Speaking at the IPF 2025 Conference, Chairperson Dr. Luo Weiwei highlighted how gallium nitride (GaN) is transforming the industry through higher efficiency, automation, and standardization.
GaN devices deliver up to 15x lower turn-off losses and 3x lower turn-on losses versus silicon, enabling standardized zero-voltage switching designs with superior efficiency and consistency. By integrating passive components onto PCBs, GaN systems also unlock automated manufacturing and predictable EMI performance, reducing cost wile improving reliability.
“GaN allows us to move from craftsmanship to science, from manual assembly to automation, and from fragmentation to standardization,” said Dr Luo. “This marks the arrival of the chip era for power electronics.”
GaN adoption is expanding across AI servers and data centers, electric vehicles, and robotics, where it delivers higher density, lower energy uses, and enhanced, precision. With 8-inch GaN-on-Si mass production, fully integrated design-to-packaging capabilities and partnerships with leading global technology companies, InnoScience is strategically positioned to drive the compound semiconductor revolution.
Original – Innoscience Technology
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Efficient Power Conversion Corporation (EPC) announced that the Beijing IP Court has denied the appeal filed by Innoscience (Suzhou) Technology Co., Ltd. (Innoscience), thereby reaffirming the validity of EPC’s Chinese Patent No. ZL201080015425.X, titled “Compensated gate MISFET and method for fabricating the same” (the Compensated Gate Patent). This latest decision by the Beijing IP Court further strengthens EPC’s valuable intellectual property portfolio and reinforces its position as a pioneer in enhancement-mode GaN semiconductor devices.
Two of EPC’s patents covering enhancement-mode GaN field effect transistors (FETs) and their fabrication had been challenged by Innoscience (Suzhou) in China. The China National Intellectual Property Administration (CNIPA) had previously validated both patents in April and May 2024, but Innoscience requested reconsideration of the decision concerning the Compensated Gate Patent in (case number: (2024）京73 行初15061 号 ((2004) Jing73XingChu NO.15061)).
“EPC’s innovations in GaN power devices reflect nearly 20 years of research and development,” said Alex Lidow, CEO and Co-founder of EPC. “We welcome the Beijing IP Court’s decision as confirmation of the strength of our intellectual property.”
Notably, EPC continues to benefit from a decision by the U.S. International Trade Commission, which ruled that Innoscience infringed EPC’s intellectual property. That ruling, which remains in full force and effect, led to an exclusion order barring the importation of infringing Innoscience products into the United States.
EPC’s GaN power transistors deliver superior efficiency, faster switching speeds, and smaller footprints compared to legacy silicon devices. The validated patents are widely regarded as critical to the structure and performance of modern enhancement-mode GaN FETs, in which power next-generation systems across AI servers, e-mobility, robotics, rapid charging, and autonomous platforms.
Original – Efficient Power Conversion
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As large AI models and high-performance computing place higher demands on power supply systems, Innoscience announced a collaboration with NVIDIA, a global leader in AI technology, to jointly promote the large-scale implementation of an 800 VDC power architecture in AI data centers.
NVIDIA’s 800 VDC architecture is the latest generation of power systems specifically designed to efficiently power future megawatt-scale computing infrastructure. Compared to traditional 54 V power systems, the 800 VDC architecture offers significant advantages in system efficiency, heat dissipation, and reliability, enabling it to support an 100x to 1000x increase in AI computing power.
As the world’s leading GaN IDM, Innoscience’s third-generation GaN devices offer exceptional high frequency, high efficiency, and high power density. They provide NVIDIA’s 800 VDC architecture with a full-link GaN power supply solution, from 800 V input to GPU terminals, covering 15 V to 1200 V. With the deep integration of 800 VDC power architecture and GaN technology, AI data centers will achieve a quantum leap from kilowatts to megawatts in the coming years, ushering in an era of more efficient, reliable, and greener AI computing.
Original – Innoscience Technology
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The District Court Munich, Germany (Landgericht München I) ruled in favor of Infineon Technologies AG in a first instance patent infringement case concerning gallium nitride (GaN) technology between Infineon and Innoscience. The case centers on the unauthorized use of Infineon’s patented GaN technologies by Innoscience. GaN plays a pivotal role in enabling high-performance and energy-efficient power systems in a broad range of applications, including renewable energy systems, data centers, industrial automation, and electric vehicles (EVs).
The Munich court’s decision was issued in a patent infringement case brought by Infineon against Innoscience. The Munich District Court found that Infineon´s patent was infringed by GaN products that Innoscience is offering in Germany. The decision in particular prohibits Innoscience from manufacturing, selling, or marketing the infringing products in Germany. Additionally, the decision requires Innoscience to pay damages to Infineon.
The decision of the District Court underscores the value of Infineon’s contributions to GaN technology and its ongoing commitment to ensuring fair competition in the market. “The ruling is a testament to the strength of Infineon’s intellectual property and confirms Infineon’s commitment to vigorously defend its intellectual property against infringements,” says Johannes Schoiswohl, Senior Vice President and Head of Infineon’s GaN Systems Business Line.
Infineon continuously strengthens its position as a leading integrated device manufacturer (IDM) in the GaN market with the industry’s broadest IP portfolio, comprising approximately 450 GaN patent families. The company remains dedicated to fostering innovation and advancing semiconductor technology to address the world’s most pressing challenges, from decarbonization to digital transformation.
Original – Infineon Technologies
