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Infineon Technologies AG successfully placed a corporate bond with a volume of €750 million under its EMTN (European Medium Term Notes) program. The issue was several times oversubscribed. The bond has an annual coupon of 2,875% and a term of five years.
“With this successful transaction, Infineon was able to refinance upcoming maturities at very favorable conditions,” says Matthias Wolff, Head of Corporate Finance at Infineon.
The bond is issued in partial debentures with a nominal value of EUR 100,000 each and was placed exclusively with qualified institutional investors. The proceeds will be used for general business financing and the refinancing of maturing debt. Infineon last placed a corporate bond with a volume of €500 million under its EMTN program in February 2024.
Original – Infineon Technologies
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Infineon Technologies AG has signed a €2.0 billion revolving credit facility with a tenor of five years and two one-year extension options at each lender’s discretion.
A total of 14 national and international reputable banks from Europe, America, and Asia have taken part in the transaction.
“This highly successful transaction highlights the strong trust which Infineon enjoys from its banking group. With the new facility, Infineon enhances and complements its liquidity position for general corporate purposes.”, says Matthias Wolff, Head of Corporate Finance at Infineon.
Original – Infineon Technologies
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Infineon Technologies AG reported results for the first quarter of the 2025 fiscal year (period ended 31 December 2024).
“Infineon has held up well in a weak market environment, closing its first quarter slightly ahead of expectations,” says Jochen Hanebeck, CEO of Infineon. “Against a continued uncertain economic backdrop, our business trajectory in this fiscal year is following the pattern we expected: Following the expected inventory reduction, we continue to anticipate that the recovery in demand will be gradual for the current fiscal year. The positive stand-out is the move towards increased use of artificial intelligence, which is driving demand for our leading power supply solutions for AI data centers. This is a prime example of our long-term growth drivers, digitalization and decarbonization.”
- Q1 FY 2025: Revenue €3.424 billion, Segment Result €573 million, Segment Result Margin 16.7 percent
- Outlook for Q2 FY 2025: Based on an assumed exchange rate of US$1.05 to the euro, revenue of around €3.6 billion expected. On this basis, Segment Result Margin forecast to be in the mid-teens percentage range
- Outlook for FY 2025: Based on an assumed exchange rate of US$1.05 to the euro (previously US$1.10), revenue is now expected to be flat to slightly up (previously: to decline slightly) compared with the prior year. The adjusted gross margin should be around 40 percent and the Segment Result Margin in the mid-to-high-teens percentage range. Investments of approximately €2.5 billion planned. Free Cash Flow adjusted for investments in frontend buildings should be around €1.7 billion and reported Free Cash Flow around €900 million
Original – Infineon Technologies
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Teradyne, Inc. and Infineon Technologies AG have entered into a strategic partnership to advance power semiconductor test.
As part of the strengthened relationship, Teradyne will acquire part of Infineon’s automated test equipment team (AET) in Regensburg, Germany. This acquisition provides mutual benefits for both companies. With the additional resources and expertise, Teradyne will accelerate its roadmap in the power semiconductor segment while collaborating on new solutions with a key market leader.
By entering into a service agreement, Infineon secures continued manufacturing support as well as enhanced flexibility to respond to internal demand for this specialized test equipment, and benefits from Teradyne’s economy of scale. Teradyne is fully committed to the 80-person team at Infineon’s Regensburg site and plans to build upon these capabilities as it integrates together with its Power Semiconductor business unit.
“We are thrilled to enter into this strategic partnership with Infineon,” said Rick Burns, President, Semiconductor Test Group at Teradyne. “Acquiring and integrating Infineon’s technology and team in Regensburg will extend our leadership in the power semiconductor market. Infineon’s technology will enhance our market-leading ETS product portfolio, demonstrating our commitment to continue to provide innovative solutions that meet the evolving needs of our customers.”
“Together with Teradyne, we are advancing our power semiconductor test capabilities,” said Alexander Gorski, Executive Vice President, Frontend Operations at Infineon. “Integrating our experienced workforce with Teradyne will help to accelerate innovation and address the dynamic test challenges in new technologies like silicon carbide and gallium nitride at the scale and flexibility needed by our markets and customers. At the same time, we provide our employees a long-term perspective in a highly specialized company.”
Original – Teradyne
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As the world continues to face the challenges of climate change and environmental sustainability, Infineon Technologies AG is at the forefront of innovation, harnessing the power of all relevant semiconductor materials including silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) to drive meaningful progress towards decarbonization and digitalization.
In its 2025 predictions – GaN power semiconductors, Infineon highlights that gallium nitride will be a game-changing semiconductor material revolutionizing the way we approach energy efficiency and decarbonization across consumer, mobility, residential solar, telecommunication, and AI data center industries. GaN provides significant benefits in end customers’ applications enabling efficient performance, smaller size, lighter weight, and lower overall cost. While USB-C chargers and adapters have been the forerunners, GaN is now on its way to reaching tipping points in its adoption in further industries, substantially driving the market for GaN-based power semiconductors.
”Infineon is committed to driving decarbonization and digitalization through innovation based on all semiconductor materials Si, SiC, and GaN,” said Johannes Schoiswohl, Head of the GaN Business Line at Infineon. “The relevance of comprehensive power systems will increase with GaN manifesting its role due to its benefits in efficiency, density, and size. Given that cost-parity with silicon is in sight, we will see an increased adoption rate for GaN this year and beyond.
Powering AI will be highly depending on GaN. The rapid increase of required computing power and energy demand in AI data centers will drive the need for advanced solutions capable of handling the substantial loads associated with AI servers. Power supplies that once managed 3.3 kW are now evolving towards 5.5 kW, with projections moving towards 12 kW or more per unit. By leveraging GaN, AI data centers can improve power density, which directly influences the amount of computational power that can be delivered within a given rack space. While GaN presents clear advantages, hybrid approaches combining GaN with Si and SiC are ideal for meeting the requirements of AI data centers and achieving the best trade-offs between efficiency, power density and system cost.
In the home appliance market, Infineon expects GaN to gain significant traction, driven by the need for higher energy efficiency ratings in applications like washing machines, dryers, refrigerators and water/heat pumps. In 800 W applications, for example, GaN can enable a two percent efficiency gain, which can help manufacturers achieve the coveted A ratings. According to Infineon, GaN-based on-board chargers and DC-DC converters in electric vehicles will contribute to a higher charging efficiency, power density, and material sustainability, with a shift towards 20 kW+ systems. Together with high-end SiC solutions, GaN will also enable more efficient traction inverters for both 400 V and 800 V EV systems, contributing to an increased driving range.
In 2025 and beyond, robotics will see widespread adoption of GaN supported by the material’s ability to enhance compactness, driving growth in delivery drones, care robots and humanoid robots. As robotics technology integrates AI advancements like natural language processing and computer vision, GaN will provide the efficiency required for compact, high-performance designs. Integrating inverters within the motor chassis eliminates the inverter heatsink while reducing cabling to each joint/axis and simplifying EMC design.
Infineon is further pushing investment in GaN research and development to overcome the challenges of cost and scalability. With the broadest product and IP portfolio, the highest quality standards, leading-edge innovations such as 300 mm GaN wafer manufacturing and bidirectional switch (BDS) transistors, the company is bolstering its leading role in driving decarbonization and digitalization based on all relevant semiconductor materials including gallium nitride.
Download the “2025 GaN predictions” ebook here.
Original – Infineon Technologies
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FORVIA HELLA, an international automotive supplier, has selected the new CoolSiC™ Automotive MOSFET 1200 V from Infineon Technologies AG for its next generation 800 V DCDC charging solution. Designed for on-board charger and DCDC applications in 800 V automotive architectures, Infineon’s CoolSiC MOSFET comes in a Q-DPAK package. The device uses top-side cooling (TSC) technology, which enables excellent thermal performance, easier assembly and lower system costs.
“We are excited to continue our partnership with FORVIA HELLA, leveraging our high-efficiency SiC products based on TSC packages,” said Robert Hermann, Vice President of Automotive High-Voltage Chips and Discretes at Infineon. “We are continuously working to take e-mobility to the next level by providing state-of-the-art SiC solutions that meet the automotive industry’s stringent requirements for performance, quality, and system cost.”
“Our customers are at the center of our efforts. That is why we have chosen Infineon’s CoolSiC Automotive MOSFET 1200 V for our next generation of DCDC converters”, said Guido Schütte, Member of the Electronics Executive Board at FORVIA HELLA. “Together with Infineon, we will continue to offer sustainable and innovative products and comprehensive services that exceed our customers’ expectations and drive the development of advanced mobility.”
Infineon’s new CoolSiC Automotive MOSFET 1200 V in the Q-DPAK package is based on Gen1p technology and offers a drive voltage in the range of V GS(off)= 0 V and V GS(on)= 20 V. The 0 V turn-off enables unipolar gate control, which simplifies design by reducing the number of components in the PCB.
With a creepage distance of 4.8 mm, the package achieves an operating voltage of over 900 V without the need for additional insulation coating. Compared to backside cooling, the TSC technology ensures optimized PCB assembly, reducing parasitic effects and resulting in significantly lower leakage inductances. As a result, customers benefit from lower package parasitics and lower switching losses. Heat dissipation is further improved by diffusion soldering the chip with .XT technology.
Original – Infineon Technologies
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Infineon Technologies AG introduced new isolated gate driver ICs for electric vehicles to enhance its EiceDRIVER™ family. The devices are designed for the latest IGBT and SiC technologies. Furthermore, they support Infineon’s new HybridPACK™ Drive G2 Fusion module, the first plug’n’play power module that implements a combination of Infineon’s silicon and silicon carbide (SiC) technologies.
The pre-configured third-generation EiceDRIVER products, 1EDI302xAS (IGBT) and 1EDI303xAS (SiC/ Fusion), are AEC-qualified and ISO 26262-compliant, ideal for traction inverters in cost-effective and high-performant xEV platforms.
The devices 1EDI3025AS, 1EDI3026AS and 1EDI3035AS provide a strong output stage of 20 A and drive high-performance inverters of all power classes up to over 300 kW. The variants 1EDI3028AS and 1EDI3038AS with an output stage of 15 A are ideal for use in entry-level battery electric vehicle (BEV) and plug-in hybrid electric vehicle (PHEV) inverters as well as for the excitation circuit of externally excited synchronous machines (EESM). In addition, the devices are equipped with the new tunable soft-off feature, which provides excellent short-circuit performance to support the latest SiC and IGBT technologies.
Various monitoring functions, such as an integrated self-test for desaturation protection (DESAT) and overcurrent protection (OCP), improve the handling of latent system errors while the new primary and secondary safe-state interface enables versatile system safety concepts. In addition, a continuously sampling 12-bit delta-sigma ADC with integrated current source can read the voltage directly from temperature measurement diodes or an NTC.
The gate drivers also provide reinforced insulation according to VDE 0884-17:2021-10 to enable safe isolation following standardized qualification and production testing procedures. Furthermore, the compact package (PG-DSO-20) and excellent compatibility with the latest power stage technologies help customers to drive system integration and reduce design cycle times.
Original – Infineon Technologies
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InnoScience (Suzhou) Technology Holding Co., Ltd. announced that it has initiated legal action to protect its intellectual property rights related to cutting-edge gallium nitride (GaN) semiconductor technologies. The Company, along with its wholly-owned subsidiary InnoScience (Suzhou) Semiconductor Co., Ltd. (“InnoScience Suzhou,” collectively referred to as the “Plaintiffs”), has filed complaints with the Intermediate People’s Court of Suzhou City, Jiangsu Province, PRC.
The lawsuits (case numbers (2024) Su 05 Minchu No. 1430 and (2024) Su 05 Minchu No. 1431) allege patent infringement against Infineon Technologies (China) Co., Ltd., Infineon Technologies (Wuxi) Co., Ltd., and Suzhou Chipswork Electronics Technologies Co., Ltd. (collectively, the “Defendants”). The patents in question, 202311774650.7 and 202211387983.X, cover innovative GaN power device designs and semiconductor manufacturing methods, for which InnoScience Suzhou is the patentee, with the Company holding the appropriate licenses.
Original – InnoScience Technology
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Infineon Technologies AG has broken ground for a new semiconductor backend production site in Samut Prakan, south of Bangkok, optimizing and further diversifying its manufacturing footprint. After an official meeting with the Prime Minister of Thailand, Paetongtarn Shinawatra, at the Government House, Infineon’s Chief Operations Officer Dr. Rutger Wijburg launched the construction of the new fab.
The first building is planned to be ready for operations at the beginning of 2026. Further ramp-up will be managed flexibly in line with market demand. For 2025, all expenditures of the new site are already included in the Capex projections of the company. The project is supported by the Thailand Board of Investment (BOI). The highly automated fab will play a crucial role in diversifying Infineon’s manufacturing landscape as global decarbonization and climate protection efforts drive demand for power modules, e.g. in industrial applications and renewables.
“As decarbonization and digitalization are strong structural growth drivers for the semiconductor industry, we are establishing a state-of-the-art backend fab in Thailand to meet future customer demand and strengthen supply chain resilience. This investment is a key step in our strategy to further diversify our manufacturing footprint and optimize it in terms of costs, while matching the expansion of our frontend capacities,” said Rutger Wijburg, COO of Infineon. “Our new backend site is designed to operate with high efficiency, resilience and quality, ensuring that we can reliably deliver high-quality products to our customers.”
“The Thailand Board of Investment welcomes and supports the Infineon Technologies decision to invest in a new backend fab in Samut Prakan, Thailand. This strategic step underscores the importance of a close and reliable partnership between Infineon and the government of Thailand, and demonstrates the mutual confidence in Thailand’s business environment and growth potential. The establishment of the National Semiconductor and Advanced Electronics Policy Committee in December 2024, along with Infineon’s investment, will significantly enhance the regional semiconductor industry and ecosystem, positioning Thailand as a key player in the global semiconductor industry. We are committed to supporting the development of Thailand’s electronics industry as well as the successful implementation of the expansion of Infineon’s manufacturing site in the region,” said Narit Therdsteerasukdi, the BOI’s Secretary General.
Infineon will support developing a robust semiconductor ecosystem in Thailand, centrally located in Southeast Asia, covering key components and materials in the supply chain. By enhancing partnerships with local businesses and institutions, the company will strengthen the semiconductor ecosystem and the development of a skilled work force. Through close collaboration with universities and local entrepreneurs, Infineon helps to grow a talent pool of highly skilled engineers with expertise in advanced semiconductors. A comprehensive training and education program to improve competencies in AI, digitalization and automation has been developed. The first group of Thai engineers successfully completed this training program at other Infineon sites.
As Infineon is committed to achieve climate neutrality by 2030, decarbonization efforts are an integral part of design and construction of the new facilities. Continuously reducing its own carbon footprint along the entire value chain is a strategic priority of the company. The new site will be equipped with solar modules, generating its own renewable energy. Moreover, Infineon will closely collaborate with local energy suppliers to ensure a reliable and green power supply.
Original – Infineon Technologies
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Infineon Technologies AG and Eve Energy Co., Ltd., a manufacturer of lithium batteries, have signed a memorandum of understanding (MoU). The two companies aim at enabling comprehensive battery management system solutions for the automotive market.
As part of the MoU, Infineon will supply a complete chipset, including microcontroller units, balancing and monitoring ICs, power management ICs, drivers, MOSFETs, controller area networks and sensor products. Equipped with these solutions, EVE Energy’s battery management system can provide high safety, high reliability and optimized cost. It also enables more accurate monitoring, protection and optimization of electric vehicle battery performance and improves driving experience and energy efficiency.
“The rapid growth in electrification has driven the need for advanced battery solutions. The partnership between Infineon’s advanced battery management ICs and EVE Energy`s advanced battery technologies will pave the way for the next generation of intelligent battery packs,” said Andreas Doll, Senior Vice President and General Manager Smart Power at Infineon. “Infineon offers a comprehensive and advanced system-level solution that meets the diverse needs of customers. We believe that further cooperation between the two sides will foster positive interaction and collaborative development at various levels.”
“EVE Energy has experienced rapid growth in the field of battery management systems in recent years, and we are determined to continue this development. Therefore, we highly value the partnership with Infineon,” said Liu Jianhua, co-founder and president of EVE Energy. “Our goal is to jointly introduce more advanced solutions to the market that meet customers’ needs and drive the development of reliable and efficient systems.”
Original – Infineon Technologies
