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Power Integrations has introduced its new TOPSwitchGaN™ IC family at APEC 2026, significantly extending the usable power range of flyback converters up to 440 W—well beyond traditional limits that typically required more complex resonant or LLC topologies.
The new devices combine the company’s PowiGaN™ technology with its established TOPSwitch™ architecture, enabling simpler, more efficient power supply designs while reducing system complexity, component count, and overall cost. This marks a notable architectural shift, allowing engineers to use flyback topologies in applications that previously required more advanced converter designs.
TOPSwitchGaN devices achieve up to 92% efficiency across a wide load range (10% to 100%) while maintaining standby power consumption below 50 mW, meeting stringent energy efficiency standards without requiring synchronous rectification. The integration of 800 V GaN switches enables lower conduction and switching losses, along with operation at switching frequencies up to 150 kHz, reducing transformer size and improving power density.
From a design perspective, the expanded flyback capability simplifies development cycles and improves manufacturability. The ICs are offered in both low-profile surface-mount and through-hole packages, supporting a wide range of applications from compact consumer devices to higher-power industrial systems such as e-bike chargers and appliances.
Strategically, this development reinforces a broader trend in the power semiconductor market: GaN is not only improving efficiency but also reshaping power architecture choices. By pushing flyback into higher power ranges, Power Integrations is enabling cost-effective alternatives to LLC and resonant designs—particularly relevant for mid-power segments where simplicity, size, and cost are critical.
This innovation positions the company to capture growing demand across consumer, industrial, and light mobility applications, while further accelerating GaN adoption in mainstream power conversion designs.
Original – Power Integrations
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Toshiba America Electronic Components, Inc. presented its latest power semiconductor innovations at APEC 2026, with a focus on improving efficiency, power density, and system reliability across automotive, data center, and industrial applications.
A key highlight is the new UMOS 11 MOSFET family, which delivers improved switching characteristics and reduced RDS(on) per area compared to the previous UMOS 10 generation. These enhancements support higher efficiency and compact system designs, particularly in applications requiring fast switching and low conduction losses.
Toshiba is also emphasizing advanced packaging and wide bandgap technologies. This includes its top-side cooled TOGT package, designed to improve thermal dissipation in high power-density systems by transferring heat directly to the heatsink rather than the PCB. In parallel, the company is showcasing its latest SiC modules and 750V/1200V SiC devices targeting grid infrastructure and automotive inverters, alongside ongoing GaN developments for both low- and high-voltage applications.
Beyond discrete devices, Toshiba is presenting a broad system-level portfolio including microcontrollers, motor control solutions, and protection ICs, supported by reference designs such as 3kW server power supplies, automotive ECU power architectures, and motor drive systems.
From a market perspective, Toshiba’s APEC presence underscores a key industry trend: convergence of silicon, SiC, and GaN technologies within unified platforms to address diverse power requirements. Its vertically integrated manufacturing model remains a strategic differentiator, ensuring supply stability and quality—critical factors as demand accelerates in AI data centers, electrified mobility, and renewable energy systems.
Original – Toshiba
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Efficient Power Conversion introduced the EPC91121 evaluation board at APEC 2026, showcasing its latest Gen-7 eGaN® technology for high-efficiency motor drive applications.
The EPC91121 is a compact three-phase inverter platform (79 mm × 80 mm) designed for rapid prototyping of advanced motor control systems in applications such as robotics, drones, industrial automation, and battery-powered tools. It supports input voltages from 18 V to 30 V and delivers up to 70 A peak output current, making it well-suited for 24 V systems.
At the core of the design is the EPC2366 40 V Gen-7 eGaN transistor, featuring ultra-low on-resistance of 0.84 mΩ. This enables high switching frequencies up to 150 kHz—significantly above traditional silicon-based solutions—allowing for reduced passive component size, lower switching losses, and improved system responsiveness.
The board integrates key inverter functions including gate drivers, current sensing, voltage and temperature monitoring, and housekeeping power supplies. High-bandwidth current sensing (±125 A) across all three phases, combined with voltage feedback, supports advanced motor control techniques such as field-oriented control (FOC) and space-vector PWM.
Additional features such as encoder and Hall sensor interfaces, multiple test points, and compatibility with control platforms from Renesas Electronics Corporation, Microchip Technology, Texas Instruments, and STMicroelectronicsenable seamless integration into existing development ecosystems.
From a market perspective, this release highlights the increasing role of GaN in low- to mid-voltage motor drives, where high switching frequency and efficiency translate directly into smaller, lighter, and more responsive systems. The availability of complete evaluation platforms further accelerates GaN adoption by reducing development complexity and time-to-market for next-generation electrified applications.
Original – Efficient Power Conversion
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ROHM Co., Ltd. announced new three-phase inverter reference designs alongside its participation at APEC 2026, reinforcing its strategy to accelerate adoption of SiC and GaN power technologies across automotive, industrial, and AI infrastructure applications.
ROHM released three reference designs—REF68005, REF68006, and REF68004—supporting three-phase inverter circuits based on its EcoSiC™ molded modules, including HSDIP20, DOT-247, and TRCDRIVE pack™. These designs target power levels up to 300 kW and are intended to reduce engineering effort in evaluation, gate driving, and thermal design, which are key barriers to broader SiC adoption. By providing ready-to-use design data, ROHM enables faster system development and easier integration of SiC modules into high-power applications such as traction inverters and industrial drives.
Complementing this, ROHM is showcasing its latest power solutions at APEC 2026 in San Antonio, highlighting advancements in both SiC and GaN technologies. The company is focusing on key growth segments including AI data centers, electric vehicles, and industrial power systems.
For AI infrastructure, ROHM is demonstrating EcoSiC™ modules in HSDIP20 and DOT-247 packages for server power supplies, as well as 650V EcoGaN™ HEMTs integrated into power solutions for high-efficiency data center applications. A joint demonstration with Tamura Corporation features gate driver modules optimized for ROHM’s SiC devices, targeting UPS systems, PV inverters, and energy storage.
In automotive applications, ROHM is emphasizing its TRCDRIVE pack™ for traction inverters, along with compact SiC modules for onboard chargers and auxiliary systems, addressing increasing demand for higher efficiency and power density in electrified powertrains.
The company is also presenting system-level demonstrations, including a three-phase BLDC motor drive platform and LogiCoA™ hybrid analog-digital power solutions, illustrating its broader push toward integrated system solutions beyond discrete devices.
From a market perspective, the combination of reference designs and live system demonstrations highlights a key industry trend: moving from component-level innovation to system-level enablement. By lowering design complexity and accelerating time-to-market, ROHM is positioning itself to capture growth in high-power applications driven by electrification and AI infrastructure.
Original – ROHM
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Alpha and Omega Semiconductor announced it will showcase its latest power management solutions for AI computing, data centers and industrial applications at the Applied Power Electronics Conference (APEC). The company will present a range of new products designed to address increasing power demands in AI core computing, AI factory infrastructure and industrial power systems.
For AI core power applications, AOS introduced two new controllers targeting high-performance GPUs and system-on-chip processors used in graphics cards and AI data centers. The AOZ73216QI is a 16-phase, 2-rail controller based on the company’s proprietary AOS Advanced Transient Modulator control scheme and supports the OpenVReg16 specification. The AOZ73104QI is a 4-phase controller compliant with OVR4-22 and is designed to safely manage GPU power to maintain performance.
The company also released the AOZ71049QI, AOZ71149QI and AOZ71146QI controllers designed to power Intel IMVP9.3 Panther Lake and Wild Cat Lake CPUs. These devices support configurations of up to 9 phases and 4 rails and are currently in mass production for several OEM and ODM AI notebook platforms.
AOS also introduced the AOZ52986QI Smart Power Stage in a compact QFN3x4 package compliant with Intel’s common footprint specification. The device offers improved efficiency and thermal performance compared with conventional smart power stage solutions. In addition, the AOZ53228QI DrMOS product family provides accurate NCP and OCP protection, longer peak current capability and improved tolerance to current imbalance conditions, targeting GPU and SoC power applications in AI computing systems.
The AOZ13058DI Type-C sink and AOZ15953DI Type-C source protection switches support USB Type-C EPR 3.1 extended power levels up to 240 W. The AOZ13058DI includes overvoltage and overcurrent protection for 48 V sink applications, while the AOZ15953DI provides protection features for Type-C source implementations.
For AI factory infrastructure and data center power systems, AOS highlighted MOSFET solutions designed for high-power-density DC-DC intermediate bus converters used in AI servers. These include the AONC40202 and AONC68816 devices in DFN3.3×3.3 packages with source-down configuration, as well as the AONA66642 and AONA68815 devices in DFN5×6 drain-down packages designed to meet strict thermal requirements.
The company is also showcasing its αSiC and GaN wide bandgap solutions designed for high-voltage, high-frequency operation in AI data center power architectures with 800 V DC distribution. For AC-DC conversion, the third-generation AOM020V120X3 αSiC MOSFET and topside-cooled AOGT020V120X2Q devices provide high-voltage performance with low conduction and switching losses. These devices support applications ranging from power sidecar configurations to direct conversion from a 13.8 kV AC grid input to 800 V DC.
For high-density DC-DC conversion inside server racks, AOS GaN FET products such as the topside-cooled 650 V AOGT035V65GA1 and the 100 V AOFG018V10GA1 enable compact and efficient conversion from 800 V DC to lower voltages required by GPUs and AI accelerators.
The company also introduced the AOLV66935 MOSFET in an LFPAK8×8 package designed for 48 V hot-swap applications in AI servers. The device features an RDS(on) below 1.85 mΩ and a junction temperature rating of 175 °C to meet high safe operating area requirements.
For industrial power applications, AOS presented solutions supporting brushless DC motor systems. The portfolio includes MOSFETs, half-bridge and three-phase motor driver ICs, and dual-core motor control microcontrollers. The GTPAK package provides topside cooling through a large exposed pad designed to transfer heat directly to a heatsink instead of the PCB, improving thermal performance in motor drive applications.
The company’s motor driver ICs integrate features such as bootstrap diodes, adjustable dead-time control, sleep modes and multiple protection functions. AOS also offers dual-core motor control MCUs including the AOZ6812QI and AOZ6816QI, which combine an 8051 core for system control with a motor control engine integrating field-oriented control, PID control and SVPWM modules.
At the conference, AOS will also present an exhibitor session titled “Simplified Thermal Modeling for Power MOSFETs,” scheduled for March 25.
Original – Alpha and Omega Semiconductor
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Navitas Semiconductor will present its latest GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power technologies at APEC 2026, booth #2027, in San Antonio, Texas, from March 22–26.
The company will highlight solutions targeting AI data centers, performance computing, grid and energy infrastructure, and industrial electrification.
Navitas will unveil a 10 kW ‘GaN-powered’ 800 V–to–50 V DC-DC platform, designed for next-generation AI data centers.
Key features include:
- Advanced 650 V and 100 V GaNFast FETs
- Three-level half-bridge architecture with synchronous rectification
- 98.5% peak efficiency
- 2.1 kW/in³ power density
- Support for both 800 V and ±400 VDC AI data center architectures
In addition, Navitas will showcase:
- A 12 kW AI data center power supply using IntelliWeave™ digital control
- An 8.5 kW OCP power supply
- A 4.5 kW CRPS power supply
For next-generation solid-state transformer (SST) applications, Navitas will present its SiCPAK™ power module portfolio, designed for high-efficiency (>98%) conversion from medium-voltage grids (13.8 kVAC to 34.5 kVAC) to 800 VDC or 1500 VDC.
The lineup includes:
- 3300 V ultra-high-voltage (UHV) SiC modules
- 2300 V UHV SiC modules
- 1200 V high-voltage solutions
A new gate driver evaluation board for dynamic characterization of UHV SiCPAK™ modules will also be demonstrated.
Navitas will debut ultra-compact:
- 240 W and 300 W GaN-based power solutions for AI-enabled high-performance computing
- 400 W to 1 kW GaN motor control systems for industrial applications
These designs emphasize superior efficiency, compact size, and high power density enabled by the latest GaNFast IC technology.
Navitas executives and engineers will participate in multiple technical sessions:
- March 24 | 8:55–9:20 AM CT | IS01.2
Maximizing MVHV SiC Performance and Reliability
Presenter: Sumit Jadav - March 25 | 11:05–11:30 AM CT | IS07.6
High-Power GaN ICs in 800V AI DC-DC Brick Solutions
Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit - March 26 | 11:35–11:50 AM CT | IS27.4
Single-stage Power Converter Enabled by GaN Bidirectional Switches
Presenter: Llew Vaughan-Edmunds
With innovations spanning GaN and ultra-high-voltage SiC, Navitas continues to target high-power markets where efficiency, density, and reliability are critical—particularly as AI infrastructure and electrification accelerate globally.
Original – Navitas Semiconductor
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Efficient Power Conversion (EPC) will present its latest Generation 7 (Gen 7) GaN technology and integrated GaN ICs at the Applied Power Electronics Conference (APEC) 2026. At booth #1935, EPC will demonstrate production-ready power architectures targeting AI infrastructure and next-generation robotic systems, alongside a series of live technical presentations led by its engineering team.
EPC said the rapid expansion of AI computing is reshaping power delivery architectures, introducing 800 V distribution and megawatt-class racks that require higher efficiency, density and reliability throughout the power conversion chain. At the same time, humanoid robotics demand compact, lightweight and highly efficient electronics embedded directly within joints and actuators. The company will show how GaN technology enables point-of-load conversion in data centers and compact motor drives in robotics.
EPC will showcase multiple development platforms already deployed in customer programs across robotics, drones and high-performance computing. These include:
- EPC9176 and EPC91104 motor drive boards
- EPC9186 multi-device inverter
- Humanoid joint platforms EPC91118 and EPC91120
- DC-DC conversion solutions including EPC91200, EPC9196 and EPC9193 series
The company emphasized that while reference designs support development, its focus remains on scalable, production-ready devices built on the Gen 7 platform.
CEO Alex Lidow said the new Generation 7 transistors outperform MOSFETs across the 40 V to 15 V range and that EPC’s latest GaN ICs enable more compact, higher-performance motor drives for humanoid robots and drones.
At APEC 2026, EPC will host live booth presentations and technical sessions covering system architectures, reliability methodologies and application implementations. Highlights include:
- Tuesday, March 24 (10:30–11:10 am):
Alex Lidow – GaN Beats MOSFETs at All Voltages
Shengke Zhang – Leveraging Test-to-Fail Methodology to Ensure Reliable Field Operation of GaN Devices - Tuesday, March 24 (2:30–3:10 pm):
Marco Palma – GaN Inverters Reference Designs for Humanoid Robot Motor Joints
Michael de Rooij – 800 V to 12 V AI Servers Using Low-Voltage GaN in an ISOP Converter
Additional conference presentations will address topics including end-to-end GaN system design, reliability assessment under dynamic switching conditions, integrated magnetics for server power supplies, robotic micro-modules and mission-profile-driven reliability for AI data centers.
EPC representatives, including CEO Dr. Alex Lidow, will be available at booth #1935 to discuss GaN solutions for AI infrastructure, robotics and high-density power systems.
Original – Efficient Power Conversion
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SemiQ Inc will debut its latest SiC module developments at the 2026 Applied Power Electronics Conference (APEC). The company will present the portfolio at Booth #1451 during the event, running March 22–26.
SemiQ said the modules are designed to deliver compact, high-efficiency solutions for active front ends (AFE) and for high-performance compressor units used in advanced data center cooling systems. The lineup targets rising power and thermal demands driven by AI-focused data centers, as well as high-power industrial and EV applications.
Visitors to the booth will be able to see SemiQ’s QSiC™ Gen3 SiC modules, which the company says deliver up to 30% reductions in specific on-resistance (RONsp) and turn-off energy losses (EOFF) versus prior generations. SemiQ positions these improvements as a way to cut switching losses, simplify cooling and raise overall system efficiency in applications such as EV charging stations, energy storage systems and industrial motor drives.
Additional module families featured at APEC 2026 include:
- S3 modules, including a 608 A half-bridge with 2.4 mΩ RDS(on) and RθJC of 0.07°C/W
- SOT-227 modules, with five variants offering RDS(on) values of 7.4, 14.5 and 34 mΩ for server power supplies, battery chargers and PV inverters
- B2T1 six-pack modules spanning 19.5 to 82 mΩ RDS(on), designed to minimize parasitics in motor drives and advanced AC-DC converters
- B3 full-bridge modules delivering up to 120 A with RDS(on) as low as 8.6 mΩ, targeting high power density in high-voltage DC-DC systems
“These SiC technologies directly address the challenges faced by those implementing AI infrastructure,” said Dr. Timothy Han, President at SemiQ. “By improving efficiency, and addressing the escalating power demands of datacenters across key application areas, we are expanding the potential for AI to scale sustainably.”
Original – SemiQ
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Texas Instruments debuted new power-management chips to support the rapidly growing power needs of modern data centers. As the adoption of high-performance computing and artificial intelligence (AI) increases, data centers require more power-dense and efficient solutions.
TI’s new TPS1685 is the industry’s first 48V integrated hot-swap eFuse with power-path protection to support data center hardware and processing needs. To simplify data center design, TI also introduced a new family of integrated GaN power stages, the LMG3650R035, LMG3650R025and LMG3650R070, in industry-standard TOLL packaging. TI is showcasing these devices at the 2025 Applied Power Electronics Conference (APEC), March 16-20, in Atlanta, Georgia.
“With data centers increasingly demanding more energy, powering the world’s digital infrastructure begins with smarter, more efficient semiconductors,” said Robert Taylor, general manager, Industrial Power Design Services. “While advanced chips drive AI’s computational power, analog semiconductors are key to maximizing energy efficiency. Our latest power-management innovations are enabling data centers to reduce their environmental footprint while supporting the growing needs of our digital world.”
As power demands surge, data center designers are shifting to 48V power architectures for enhanced efficiency and scalability to support components such as CPUs, graphics processing units and AI hardware accelerators. TI’s 48V stackable integrated hot-swap eFuse with power-path protection empowers designers to tackle high-power (>6kW) processing needs with a scalable device that simplifies design and reduces solution size by half compared to existing hot-swap controllers in the market.
To learn more about designing with the TPS1685, read the technical article, “Powering Modern AI Data Centers with an Integrated 48V Hot-Swap eFuse Device.”
In addition, TI introduced a new family of integrated GaN power stages. The LMG3650R035, LMG3650R070 and LMG3650R025 leverage the benefits of TI GaN in an industry-standard TOLL package, allowing designers to take advantage of TI GaN efficiency without costly and time-consuming redesigns.
The new power stages integrate a high-performance gate driver with a 650V GaN field-effect transistor (FET) while achieving high efficiency (>98%) and high-power density (>100W/in3). They also integrate advanced protection features including over-current protection, short-circuit protection and over-temperature protection. This is especially important for AC/DC applications like server power, where designers are challenged to push more power into smaller spaces.
At APEC 2025, TI will showcases power solutions that enable designers to reimagine new levels of power density and efficiency, including:
- Dell’s 1.8kW server power-supply unit (PSU) with TI GaN power stages: Dell’s first high-efficiency 12V PSU design uses a TI integrated GaN power stage. The PSU features a GaN FET with built-in driver, protection and temperature reporting to achieve over 96% system-level efficiency.
- Vertiv’s 5.5kW server PSU: Part of Vertiv’s PowerDirect Rack DC power system, the latest PSU from Vertiv is powered by TI GaN technology to deliver up to 132kW per rack.
- Greatwall’s 8kW PSU: To help designers increase power density, Greatwall and TI co-developed an 8kW open-rack PSU using TI GaN technology and TI C2000™ real-time microcontrollers.
Throughout the show, TI power experts will lead 27 industry and technical sessions to address power-management design challenges. Visit TI in the Georgia World Congress Center, Booth No. 1213. The full schedule is available at ti.com/APEC.
Original – Texas Instruments
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Wise-integration will unveil its latest WiseGan® and WiseWare® advancements at APEC 2025 in Atlanta, featuring two technical presentations and demonstration boards, including a new 1.5kW Totem Pole PFC module designed specifically for server and industrial applications.
“GaN technology continues to drive new efficiencies in power electronics, and APEC 2025 is the ideal platform to showcase our latest advancements,” said Thierry Bouchet, CEO of Wise-integration. “Our WiseWare® digital controllers are accelerating the adoption of GaN by enabling higher performance, system simplification, and seamless integration. Beyond efficiency, they lay the foundation for the next generation of intelligent power systems, addressing the growing demands of AI-driven server and industrial applications. These innovations are re-shaping the future of power conversion.”
Presentations
Technical Session (T04.4): “Novel Dual Output LDO Architecture in 650-V GaN Technology for Power ICs”
- Speaker: Plinio Bau, IC Design Engineer
- Date/Time: Tuesday, March 18, 9:30 – 9:50 AM
- Overview: Introduction of a novel dual-output, low-dropout regulator (LDO) architecture designed for 650-V GaN technology to enhance power IC efficiency and performance.
Industrial Session (IS26): “Comparing ZVS Losses Distribution of Similar High-Performance GaN HEMTs”
- Speaker: Theo Simon, Power Electronics Application Engineer
- Date/Time: Thursday, March 20, 11:00 – 11:25 AM
- Overview: Analysis of zero-voltage switching (ZVS) loss distribution in high-performance GaN high-electron-mobility transistors (HEMTs) to optimize power conversion efficiency.
Live Demonstrations at Booth #1238: Wise-integration will showcase four state-of-the-art boards, featuring its latest WiseWare® technologies:
- 1.5kW Single-Phase Totem Pole PFC (CrCM) – Designed for server and industrial applications, powered by WiseWare® digital control, with switching frequencies from 200 kHz to 730 kHz,
- 300W Totem Pole PFC (CrCM) – Highlights GaN’s efficiency in power conversion using the WIW1101 MCU Digital Controller and WiseGan® WI71060A,
- 300W Totem Pole PFC (CrCM)-LLC – Demonstrates improved PFC-LLC performance with WIW1101 MCU Digital Controller, WiseGan® WI71060A (PFC), and WI71120A (LLC), and
- 150W WiseWare® 2 Demo Board – Showcases a patented single-stage architecture that virtualizes power factor correction (PFC), significantly simplifying system designAbout WiseWare® Digital ControllerWiseWare® is a high-frequency digital AC-DC controller portfolio for SMPS applications. Utilizing MCU-based ZVS proprietary firmware, it optimizes GaN transistor power conversion. WiseWare® 1.1 (WIW1101) is a digital controller for Totem Pole PFC in AC-DC converters, enabling CrCM operation with ZVS to maximize efficiency.
Original – Wise-integration
