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Texas Instruments debuted new power-management chips to support the rapidly growing power needs of modern data centers. As the adoption of high-performance computing and artificial intelligence (AI) increases, data centers require more power-dense and efficient solutions.
TI’s new TPS1685 is the industry’s first 48V integrated hot-swap eFuse with power-path protection to support data center hardware and processing needs. To simplify data center design, TI also introduced a new family of integrated GaN power stages, the LMG3650R035, LMG3650R025and LMG3650R070, in industry-standard TOLL packaging. TI is showcasing these devices at the 2025 Applied Power Electronics Conference (APEC), March 16-20, in Atlanta, Georgia.
“With data centers increasingly demanding more energy, powering the world’s digital infrastructure begins with smarter, more efficient semiconductors,” said Robert Taylor, general manager, Industrial Power Design Services. “While advanced chips drive AI’s computational power, analog semiconductors are key to maximizing energy efficiency. Our latest power-management innovations are enabling data centers to reduce their environmental footprint while supporting the growing needs of our digital world.”
As power demands surge, data center designers are shifting to 48V power architectures for enhanced efficiency and scalability to support components such as CPUs, graphics processing units and AI hardware accelerators. TI’s 48V stackable integrated hot-swap eFuse with power-path protection empowers designers to tackle high-power (>6kW) processing needs with a scalable device that simplifies design and reduces solution size by half compared to existing hot-swap controllers in the market.
To learn more about designing with the TPS1685, read the technical article, “Powering Modern AI Data Centers with an Integrated 48V Hot-Swap eFuse Device.”
In addition, TI introduced a new family of integrated GaN power stages. The LMG3650R035, LMG3650R070 and LMG3650R025 leverage the benefits of TI GaN in an industry-standard TOLL package, allowing designers to take advantage of TI GaN efficiency without costly and time-consuming redesigns.
The new power stages integrate a high-performance gate driver with a 650V GaN field-effect transistor (FET) while achieving high efficiency (>98%) and high-power density (>100W/in3). They also integrate advanced protection features including over-current protection, short-circuit protection and over-temperature protection. This is especially important for AC/DC applications like server power, where designers are challenged to push more power into smaller spaces.
At APEC 2025, TI will showcases power solutions that enable designers to reimagine new levels of power density and efficiency, including:
- Dell’s 1.8kW server power-supply unit (PSU) with TI GaN power stages: Dell’s first high-efficiency 12V PSU design uses a TI integrated GaN power stage. The PSU features a GaN FET with built-in driver, protection and temperature reporting to achieve over 96% system-level efficiency.
- Vertiv’s 5.5kW server PSU: Part of Vertiv’s PowerDirect Rack DC power system, the latest PSU from Vertiv is powered by TI GaN technology to deliver up to 132kW per rack.
- Greatwall’s 8kW PSU: To help designers increase power density, Greatwall and TI co-developed an 8kW open-rack PSU using TI GaN technology and TI C2000™ real-time microcontrollers.
Throughout the show, TI power experts will lead 27 industry and technical sessions to address power-management design challenges. Visit TI in the Georgia World Congress Center, Booth No. 1213. The full schedule is available at ti.com/APEC.
Original – Texas Instruments
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Wise-integration will unveil its latest WiseGan® and WiseWare® advancements at APEC 2025 in Atlanta, featuring two technical presentations and demonstration boards, including a new 1.5kW Totem Pole PFC module designed specifically for server and industrial applications.
“GaN technology continues to drive new efficiencies in power electronics, and APEC 2025 is the ideal platform to showcase our latest advancements,” said Thierry Bouchet, CEO of Wise-integration. “Our WiseWare® digital controllers are accelerating the adoption of GaN by enabling higher performance, system simplification, and seamless integration. Beyond efficiency, they lay the foundation for the next generation of intelligent power systems, addressing the growing demands of AI-driven server and industrial applications. These innovations are re-shaping the future of power conversion.”
Presentations
Technical Session (T04.4): “Novel Dual Output LDO Architecture in 650-V GaN Technology for Power ICs”
- Speaker: Plinio Bau, IC Design Engineer
- Date/Time: Tuesday, March 18, 9:30 – 9:50 AM
- Overview: Introduction of a novel dual-output, low-dropout regulator (LDO) architecture designed for 650-V GaN technology to enhance power IC efficiency and performance.
Industrial Session (IS26): “Comparing ZVS Losses Distribution of Similar High-Performance GaN HEMTs”
- Speaker: Theo Simon, Power Electronics Application Engineer
- Date/Time: Thursday, March 20, 11:00 – 11:25 AM
- Overview: Analysis of zero-voltage switching (ZVS) loss distribution in high-performance GaN high-electron-mobility transistors (HEMTs) to optimize power conversion efficiency.
Live Demonstrations at Booth #1238: Wise-integration will showcase four state-of-the-art boards, featuring its latest WiseWare® technologies:
- 1.5kW Single-Phase Totem Pole PFC (CrCM) – Designed for server and industrial applications, powered by WiseWare® digital control, with switching frequencies from 200 kHz to 730 kHz,
- 300W Totem Pole PFC (CrCM) – Highlights GaN’s efficiency in power conversion using the WIW1101 MCU Digital Controller and WiseGan® WI71060A,
- 300W Totem Pole PFC (CrCM)-LLC – Demonstrates improved PFC-LLC performance with WIW1101 MCU Digital Controller, WiseGan® WI71060A (PFC), and WI71120A (LLC), and
- 150W WiseWare® 2 Demo Board – Showcases a patented single-stage architecture that virtualizes power factor correction (PFC), significantly simplifying system designAbout WiseWare® Digital ControllerWiseWare® is a high-frequency digital AC-DC controller portfolio for SMPS applications. Utilizing MCU-based ZVS proprietary firmware, it optimizes GaN transistor power conversion. WiseWare® 1.1 (WIW1101) is a digital controller for Totem Pole PFC in AC-DC converters, enabling CrCM operation with ZVS to maximize efficiency.
Original – Wise-integration
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Vishay Intertechnology, Inc. announced that at the Applied Power Electronics Conference and Exposition (APEC) 2025, the company will be showcasing its broad portfolio of passive and semiconductor solutions that address the latest trends in power electronics — from energy harvesting, electric vehicle (EV) powertrains, and battery technologies to high efficiency power conversion for data centers.
Taking center stage in booth 905 will be Vishay’s newly released 1200 V MaxSiC™ series silicon carbide (SiC) MOSFETs, which deliver on-resistances of 45 mΩ, 80 mΩ, and 250 mΩ in standard packages for industrial applications, with custom products also possible. In addition, Vishay will provide a portfolio roadmap for 650 V to 1700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology — enabled through the company’s acquisition of MaxPower Semiconductor, Inc. — which will address market demands in traction inverter, photovoltaic energy storage, on-board charger, and charging station applications.
In booth 419, Vishay will be highlighting high energy PTC and NTC inrush current limiting solutions from the company’s most recent acquisition: Ametherm. They include a PTC matrix capable of withstanding 1500 VDC and 1125 J. Vishay Ametherm products are well-suited to growing industries and applications, such as robotic automation, industrial power supplies and motor drives, power distribution for server and AI cloud computing, LED lighting systems, medical devices, imaging equipment, electric vehicle charging, and alternative energy infrastructure.
At APEC 2025, Vishay will also be offering a variety of product-focused demonstrations highlighting IHLE® series low profile, high current inductors featuring integrated E-field shields; the THJP ThermaWick® Thermal Jumper; the pulse performance of MELF, CRCW / CRCW-HP thick film, and MCS, MCU, and MCW thin film chip resistors; and the thermal capabilities of the PCAN and RCP high power thin and thick film resistors. In addition, automotive-focused application demonstrations will include:
- An intelligent battery shunt built on WSBE Power Metal Strip® resistors, with low TCR and a CAN FD / USB interface for 400 V / 800 V systems
- A 48 V eFuse featuring TrenchFET® MOSFETs designed to handle a continuous current up to 100 A and operate continuously at maximum current with less than 14 W of losses
- A 1 kW, 48 V / 12 V buck-boost converter featuring two module power stages — each rated for 500 W — in a compact form factor
Additional Vishay passive components on display at APEC 2025 will include the IHDM series of high current, edge-wound through hole inductors with continuous operation to +180 °C; hybrid planar and integrated transformers; wireless charging coils; sensing NTC and PTC thermistors, including the PTCEL series capable of handling energy absorption up to 240 J; Power Metal Strip resistors with high power to 9 W and shunts with low TCR down to < ± 10 ppm/°C; high power wirewound, thin film, and thick film resistors, including the anti-surge RCS with power to 0.5 W in the 0805 case size; high frequency thick film resistors with up to 500 000 thermal cycles; high voltage thick film resistors and dividers; high voltage aluminum, ceramic, and power electronic capacitors (PEC); high capacity energy storage capacitors; military-grade, high energy, and hermetically sealed tantalum capacitors; and robust metallized polypropylene film capacitors, including the MKP1848e DC-Link capacitor with high temperature operation to +125 °C.
Highlighted Vishay semiconductor solutions will consist of the SiC967 microBRICK® synchronous buck regulator with integrated power MOSFETs and inductor and a wide input voltage range of 4.5 V to 60 V; scalable microBUCK® voltage regulators that deliver high efficiency; 400 V, 600 V, and 1200 V standard rectifiers in SlimDPAK 2L and SMPD 2L packages with high creepage distance; 650 V and 1200 V SiC Schottky diodes up to 12 A in eSMP® series and power packages for AC/DC power factor correction (PFC) and ultra high frequency output rectification; transient voltage suppressors (TVS); and analog switches in all major configuration types.
Original – Vishay Intertechnology
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Cambridge GaN Devices will demonstrate at APEC that the company’s ICeGaN® GaN ICs can now satisfy a broad range of applications with higher power requirements, such as servers, data centres, inverters, industrial power supplies and, very soon, automotive EVs over100 kW. The company’s new P2 series ICs feature RDS(on) levels down to 25 mΩ, supporting multi kW power levels with the highest efficiency, and a secure supply chain is in place including manufacturing deals with TSMC and ASE, and distribution through Digi-Key.
HENRYK DABROWSKI | SENIOR VICE PRESIDENT OF GLOBAL SALES, CGD
“GaN is now widely accepted as the technology of choice for mobile device chargers and is now set to supersede traditional silicon MOSFETs in higher power applications. The industry is also beginning to realize that GaN may replace SiC in certain high efficiency designs, due to its lower manufacturing cost. At APEC – one of the world’s most important events for the power industry – we are eagerly looking forward to having in-depth discussions with designers of high efficiency power systems and demonstrating the ruggedness, reliability and ease of use of our ICeGaN® GaN IC technology.”
During APEC, CGD will give the following Industry Session and Exhibitor Presentations:
Unlocking the Potential of Multi-level Inverters with Integrated ICeGaN technologies (Session: IS14.7)
As the electric vehicle market develops, there is a continuous drive to look at new and novel approaches to further improve the efficiency of the traction inverter and other electrical subsystems.Multi-level inverters enable the use of much high switching frequencies and break down the total voltage into smaller steps, which in turn allows for improved efficiency and downsizing of other parts of the system. GaN technology optimizes the benefits of multi-level topologies. CGD’s ICeGaN technology brings a higher level of integration, lower cost, best in class robustness and ease of use.
Presenter: Daniel Murphy, Director of Technical Marketing, CGD Date: Wednesday March 19, 2025 Time: 4:30 PM – 4:55 PM ET Location: Level Four, A411
ICeGaN Leads the Industry in GaN Integration
This presentation will demonstrate how ICeGaN technology leads in simplification, cost reduction, robustness, carbon footprint and efficiency of GaN power applications.Presenter: Peter Di Maso, Vice President, Business Development, CGD Date: Wednesday, March 19, 2025 Time: 12:45 PM – 1:15 PM ET Location: A301
On booth 2039, CGD will present demos that highlight the benefits of employing its ICeGaN technology in three application spaces: Motor Drives
- ICeGaN vs discrete GaN circuits comparison in half-bridge (daughter cards) demo board
- High and low power QORVO motor drive evaluation kits utilising ICeGaN and developed in collaboration with CGD
- Half-bridge built using CGD’s ICeGaN ICs in the BHDFN (Bottom Heat-spreader DFN) bottom-side cooled package with wettable flanks for easy inspection
Data Centres
- 3 kW totem-pole PFC evaluation board
- Half-bridge built using CGD’s BHDFN-packaged ICeGaN ICs
- Full-bridge demo showing CGD’s ICeGaN ICs in the DHDFN (Dual Heat-spreader DFN) package which has low thermal resistance (Rth(JC)), and can be operated with bottom-side, top-side and dual-side cooling. This package offers flexibility in design and out-performs the often-used TOLT package in top-side and, especially, dual-side cooled configurations.
- 2.5kW GaN-based CCM totem-pole PFC reference design targetting LED drivers, industrial brick DC/DC and general PSUs with power range of 500W to 1.5kW.
Scalable Power
- New single IC ICeGaN technology platform that delivers over 100kW, enabling CGD to address the $10B+ EV market, currently dominated by SiC, with cost-effective GaN solutions
- Single leg of a 3-phase 800 V automotive inverter demo board, developed in partnership with French public R&I institute, IFP Energies nouvelles (IFPEN)
- Parallel evaluation board demoing ICeGaN’s higher power capabilities
- Full-bridge demo showing CGD’s ICeGaN ICs in the DHDFN package
GIORGIA LONGOBARDI | FOUNDER AND CEO, CGD
“This is an exciting time for our industry as it embraces the disruptive GaN technology. Although this change from silicon has indisputably shown the power density and efficiency benefits of GaN, only CGD is presenting this new technology in an easy-to-use solution, which has been proven to be the most rugged in the industry. With our technology roadmap which details how ICeGaN will be able to address even EV applications over 100kW, we are sure designers will be inspired by the possibilities that ICeGaN has opened up.”
Original – Cambridge GaN Devices
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SemiQ Inc will give the first official unveiling of the company’s new 1700 V and 1200 V Gen 3 SiC MOSFETs at the 2025 Applied Power Electronics Conference (APEC).
APEC takes place at the Georgia World Congress Center in Atlanta from March 16, with SemiQ’s booth located at stand #1348.
SemiQ’s 1200 V Gen3 SiC was announced in February, delivering an improved performance with a smaller die size and at a lower cost. The series includes automotive qualified (AEC-Q101) options and Known Good Die (KGD) testing has been implemented across the series with verification at voltages exceeding 1400 V, plus avalanche testing to 800 mJ. Reliability is further improved through 100% gate-oxide burn-in screening and UIL testing of discrete packaged devices.
The company’s new 1700 V MOSFET family of MOSFETS and modules with AEC-Q101 certification is designed to meet the needs of medium-voltage high power conversion applications, from photovoltaic, wind inverters and energy storage to EV and roadside charging as well as uninterruptable power supplies, and induction heating/welding. These switching planar D-MOSFETs enable more compact system designs with higher power densities and have been tested to KGD beyond 1900 V, with UIL avalanche testing to 600 mJ.
Dr. Timothy Han, President at SemiQ said: “There is so much innovation happening in power electronics right now and we’re delighted to have launched our next generation technologies in time to have them on display at APEC. The show brings together many of the leading minds within the industry and we’re looking forward to discussing the challenges faced and how we can help them.”
Original – SemiQ
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EPC is set to highlight cutting-edge advancements in AI, robotics, and other high-density power conversion applications at the Applied Power Electronics Conference (APEC) 2025. During the event, held from March 16 to March 20 in Atlanta, GA, EPC will focus on demonstrating how GaN is revolutionizing AI infrastructure, humanoid robotics, industrial and consumer applications in booth 1231.
AI = GaN: Enabling the Next Generation of AI Servers
Artificial intelligence requires ultra-efficient power conversion to sustain increasing computing densities. EPC’s latest GaN solutions for AC/DC server power and 48 V DC-DC GPU power reduce losses, increase power density, improve thermal management, and offer superior efficiency.
Motor Drives: Powering Robotics, Automation, and More
From industrial automation to consumer electronics, GaN-based motor drives offer higher efficiency, smaller size, and improved performance over traditional silicon-based solutions. EPC will showcase live demonstrations of GaN-powered drives in applications such as:
- Power tools – Enhanced battery life and performance with GaN motor drives
- Humanoids & quadrupeds – Next-generation robotics with faster response times and increased power efficiency
- Vacuum cleaners & delivery bots – Smarter, more autonomous systems benefiting from GaN’s high-speed switching and power density
Visit EPC at APEC 2025
- Schedule a Meeting: EPC’s technical experts, including CEO Dr. Alex Lidow, will be on-site to discuss how GaN is driving innovation across multiple industries. To schedule a meeting during APEC 2025 contact info@epc-co.com
- Exhibition Booth # 1231: Visit EPC’s booth to explore our comprehensive portfolio of GaN-based solutions. See firsthand the superior performance in live demonstrations
- Technical Presentations: Attend our technical sessions to gain insights into the latest trends and advancements in GaN power conversion technology
- Enhance Traction Motor Efficiency using a GaN based Four-Level Flying Capacitors Inverter
Industry Session (IS03.3): March 18 at 9:20 a.m.
Speaker: Marco Palma - Debate Session 1: SiC vs GaN – Which will lead in power conversion?
March 18 at 4:30 p.m.
Panelist: Alex Lidow, Ph.D. - High performance 5 kW, 4-Level totem-pole PFC converter using 200 V GaN FETs for open compute servers
Industry Session (IS12.2): March 19 at 8:55 a.m.
Speaker: Michael de Rooij, Ph.D. - Powerstage GaN Integrated Circuits Operation in Robotic Applications
Industry Session (IS14.4): March 19 at 2:45 p.m.
Speaker: Marco Palma
- Enhance Traction Motor Efficiency using a GaN based Four-Level Flying Capacitors Inverter
At APEC 2025, we are excited to showcase how EPC’s GaN solutions are setting new benchmarks in power conversion and efficiency,
said Nick Cataldo, VP of Sales and Marketing at EPC.Original – Efficient Power Conversion
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Navitas Semiconductor has announced it will attend APEC 2025 and highlight the latest advances in GaN and SiC wide bandgap technologies for AI data center EV, and mobile applications. Additionally, Navitas will highlight its latest ‘paradigm in power conversion’, unveiled in a live-streamed press event on the 12th of March.
APEC takes place at Atlanta’s Georgia World Congress Center from March 16th to 20th. The company’s “Planet Navitas” stand (Booth #1107) will showcase the company’s mission to ‘Electrify our World™’ by advancing the transition from legacy silicon to next-generation, clean energy GaN and SiC power semiconductors. These technologies are designed for high-growth markets that demand the highest efficiency and power density. The shift from silicon to GaN and SiC technologies has the potential to save over 6,000 megatons of CO2 per year by 2050. Recent Navitas breakthroughs that will be highlighted on the stand include:
- Navitas’ breakthrough that will create a paradigm shift in power conversion – full details will be unveiled in a live-streamed press event on the 12th of March.
- World’s First 8.5 kW AI Data Center Power Supply: See the world’s first 8.5 kW OCP power solution achieving 98% efficiency for AI and hyperscale data centers. Featuring high-power GaNSafe™ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC and 3-Phase LLC topologies to provide the highest efficiency, performance, and lowest component count.
- World’s Highest Power Density AI Power Supply: Navitas delivers efficient 4.5 kW power in the smallest power-supply form-factor for the latest AI GPUs that demand 3x more power per rack. The optimized design uses high-power GaNSafe ICs and Gen-3 Fast SiC MOSFETs enabling the world’s highest power density with 137 W/in3 and over 97% efficiency.
- ‘IntelliWeave’ Patented Digital Control Optimized for AI Data Center Power Supplies: Combined with high-power GaNSafe™ and Gen-3 ‘Fast’ SiC MOSFETs to enable PFC peak efficiencies of 99.3% and reduce power losses by 30% compared to existing solutions.
- Mid-voltage GaNFast FETs targeting 48V AI data center power supplies, next-generation EV platforms EV and AI-based robotics, to enable high-frequency, high-efficiency, and high-power density power conversion systems.
- GaNSlim™: Simple. Fast. Integrated: A new generation of highly integrated GaN power ICs that will further simplify and speed the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance. Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting systems of up to 500W.
- Automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology: Enabled by over 20 years of SiC innovation leadership, GeneSiC™ technology leads on performance with the Gen-3 ‘Fast’ SiC MOSFETs with ‘trench-assisted planar’ technology. This proprietary technology provides world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
- SiCPAK™ High-Power Modules – Built for Endurance and Performance: Utilizing industry-leading ‘trench-assisted planar’-gate technology and epoxy-resin potting for increased power cycling and long-lasting reliability, SiCPAK modules offer compact form factors and provide cost-effective, power-dense solutions for applications including EV charging, drives, solar, and energy storage systems (ESS).
- New Advancements in our Leading GaNFast & GeneSiC technology:
- GeneSiC MOSFETs specifically optimized for EV traction modules with additional screening and gold metallization for sintering.
- GaNSense™ motor drive ICs with bi-directional loss-less current sensing, voltage sensing, and temperature protection, further enhancing performance and robustness beyond what is achievable by any discrete GaN or discrete silicon device.
Navitas will participate and present in the Industry Session which showcases the latest work in all areas of power electronics.
Technical Presentations:
Wednesday 19th March
- ‘GaNSlim Power IC & DPAK-4L Package Enables 100W, 100cc, PD3.1 Continuous Power Solution with 95% Efficiency’
- 2:20 pm, IS14.3, A411, Tom Ribarich, Sr Dir. Strategic Marketing
- ‘500kHz Inverter Design Using Bidirectional GaN Switches’
- 8:30 am, IS11.1, A403, Jason Zhang, VP Applications & Technical Marketing
- ‘Advancing Power Solutions: Integrating Wide Bandgap Technologies for Next-Generation Applications’
- 1:30 pm – 4:55 pm ET, IS14, Llew Vaughan-Edmunds, Session Chair.
- ‘WBG Converter Design’
- 8:30 am – 11:55 am ET, IS11.1, Jason Zhang, Session Chair.
Thursday 20th March
- ‘Marketing & Technology Trends in Power Electronics’
- 10:10 AM – 11:50 AM ET, Stephen Oliver, Session Chair.
Original – Navitas Semiconductor
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CISSOID will be exhibiting at APEC 2024 – the IEEE Applied Power Electronics Conference and Exposition. The conference will take place in Long Beach, California from February the 25th to the 29th. You can find CISSOID on the booths of partners Silicon Mobility (booth 452) & NAC Semi (booth 2035).
On this occasion, CISSOID will unveil the latest of their SiC offering. CISSOID will display the Intelligent power module, a complete SiC Inverter Reference Design, and a newly released product.
CISSOID’s latest IPM design offers the best SiC Gate driver technology in a compact form factor. Company’s SiC Inverter Reference Design offers a complete Inverter assembly with DC-link Capacitor, EMI Filter, DC and phase current sensors, active discharge circuit & reference cooling. It is built around CISSOID’s Inverter Control Module which will be released soon.
Inverter Control Module sneak peak, the complete offering will be unveiled on the conference floor.
Original – CISSOID
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Innoscience Technology will demonstrate industry-leadership at the upcoming IEEE Applied Power Electronics Conference and Exposition (APEC) 2024.
At the industrial session, Innoscience will address the exponential demand in power by datacenters due to the processing power necessitated by Artificial Intelligence (AI) applications. The paper will show that with Innoscience’s 650V InnoGaN, it is possible to make a 2kW AC/DC conversion PSU with a high power density and a peak efficiency above 96%, thereby meeting the recent stringent 80 Plus titanium efficiency rating.
Thanks to the absence of a body diode on GaN devices, a simple Totem pole PFC architecture can be implemented while still reaching high levels of efficiency. At the booth Innoscience will also showcase a 4.2kW AC/DC conversion PSU meeting 80 Plus titanium efficiency rating within a power density of 130W/in3.
Moreover, to address the 48V to 12V DC-DC power conversion inside the data center, Innoscience will present an all GaN HEMTs based 1kW 48V-12V unregulated LLC solution that features GaN power devices both at the primary side (100V devices) as well as at the secondary side (40V devices). In order to maximize the power density and simplify the circuit, the solution uses Innoscience’s recent integrated SolidGaN solution (ISG3201), which integrates an half-bridge (made by two 100V/3.2mOhm InnoGaN devices) with its driver, protection etc.. in one package. The final all GaN 1kW 48V-12 converter has a size of only 50mmx30mmx9mm, which is 70% smaller than a Silicon counterpart rated only 600W. The converter achieves a peak efficiency of 98.5%.
Dr. Denis Marcon, General Manager Innoscience Europe, comments: “Reliability is also an important consideration for data centers, because they operate 24/7 and they must guarantee continuity of service. Therefore, in this paper we will also present strong reliability data of Innoscience’s HV and LV GaN power devices, including end-of-life testing for life-time calculation which shows reliability data at the parts-per-billion level.”
Yi Sun, General Manager Innoscience America comments: “Innoscience today has one of the widest portfolio of GaN power device solutions covering 30V to 700V applications, a family of GaN discrete available in standard packages (e.g. QFN, FCQFN, TO252 etc..) as well as integrated GaN IC solutions that include in one chip the GaN FET, the driver, protections etc.”
Visitors to the Innoscience booth at APEC will also see new products, such as the NV100FQ030A, a 100V bidirectional IC that can be employed to deliver high efficiency in applications including battery management systems, high-side load switching in bidirectional converters, and various switching circuits in power systems.
Yi Sun, adds: “Innoscience is leading the GaN industry with many new products that are industry firsts. That is why our devices are finding applications in all markets, from consumer chargers through industrial and communications and into the automotive sector. Join us at booth 1543 to find out more.”
Innoscience presentations:
- IS02.7 – Industry Session / Tuesday Feb 27th ,11:30-11:55am “Ultra-High Frequency (10MHz) Buck Converter with GaN HEMT for Mobile Phone Application” given by Dr Pengju Kong
- IS11.1 – Industry Session / Wednesday Feb 28th, 8:30-8:55am “Efficient and compact power conversions made possible with GaN technology” given by Dr Pengju Kong.
Original – Innoscience Technology
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EPC announced its participation in the premier power electronics conference, APEC 2024. The event, held from February 25 to February 29 in Long Beach, CA, brings together industry experts and thought leaders to explore the latest advancements in power electronics.
At APEC 2024, EPC highlights the industry’s most comprehensive portfolio of GaN-based power conversion solutions. With a focus on efficiency, reliability, and performance, EPC’s gallium nitride-based products offer unparalleled advantages for applications such as DC-DC converters, motor drives, and renewable energy.
Visit EPC at APEC 2024:
- Schedule a Meeting: Learn from GaN Experts and discover strategies to optimize your power systems. To schedule a meeting during APEC 2024 contact info@epc-co.com
- Exhibition Booth # 1045: Visit EPC’s booth to explore comprehensive portfolio of GaN-based solutions.
- Connect with EPC’s team of experts to gain insight into the ‘GaN First Time Right™ Design Process.
- Take the Change My Mind Challenge to see how EPC GaN FETs can be priced lower than equivalent silicon MOSFETs.
- Experience firsthand the superior performance and efficiency of EPC’s GaN products through live demonstrations including robotics, drones, and AI servers.
- Technical Presentations: Attend technical sessions to gain insights into the latest trends and advancements in GaN power conversion technology.
- Ultra-fast switching – the Fastest Power FETs in the Solar System
Industry Session (IS11.5): February 28 at 10:40 a.m.
Speaker: John Glaser, Ph.D. - Experimental Investigation on Transient Operation in Low-Voltage GaN FET Parallel Connection
Industry Session (IS16.4): February 28 at 2:45 p.m.
Speaker: Marco Palma - eGaN Integrated Circuits as a Building Block for Motor Drive Inverters
Industry Session (IS21.1): February 29 at 8:30 a.m.
Speaker: Marco Palma - Using Test-to-Fail Methodology to Accurately Project Lifetime of GaN HEMTs in Common DC-DC Converter Topologies
Industry Session (IS22.5): February 29 at 10:30 a.m.
Speaker: Shengke Zhang, Ph.D. - Emergence of Artificial Intelligence Requires GaN DC-DCs Highest Performance, Efficiency, and Density
Industry Session (IS27.1): February 29 at 1:30 p.m.
Speaker: Andrea Gorgerino
- Ultra-fast switching – the Fastest Power FETs in the Solar System
“At APEC 2024, we are excited to showcase our latest advancements in GaN technology, which empower our customers to achieve greater efficiency and performance in their applications,” said Nick Cataldo, VP of Sales and Marketing at EPC.
Original – Efficient Power Conversion
