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Alpha and Omega Semiconductor Limited (AOS) introduced its αMOS E2™ 600 V Super Junction MOSFET platform and the first device from the family, the AOTL037V60DE2. Targeted at servers, workstations, telecom rectifiers, solar inverters, motor drives and industrial power systems, the platform addresses the core requirements of modern mid- to high-power SMPS and inverter designs: higher efficiency, greater power density, lower system cost and robust operation.
Engineered with a robust intrinsic body diode, αMOS E2™ reliably handles hard-commutation events—such as body-diode reverse recovery during short-circuits or start-up transients—to enhance system resilience. The AOTL037V60DE2, offered in a TOLL package, features a maximum RDS(on) of 37 mΩ. AOS application evaluations demonstrated body-diode ruggedness withstanding di/dt of 1300 A/µs under specified forward-current conditions at a junction temperature of 150 °C. Testing also confirmed superior Avalanche Unclamped Inductive Switching (UIS) capability and longer Short-Circuit Withstanding Time (SCWT) versus competing MOSFETs, translating into stronger system-level reliability under abnormal operating scenarios.
The platform is optimized for critical high-voltage topologies, including the slow leg of totem-pole PFC, LLC resonant converters, PSFB and cyclo-converters, helping designers meet stringent efficiency and power-density targets while maintaining robustness.
Technical highlights
• Optimized for soft-switching topologies with exceptionally low switching losses
• Rugged body diode with reduced Qrr for demanding, high-stress applications
• Enhanced robustness with strong UIS, inrush handling and wide SOA
• Designed to prevent self-turn-on for reliable operation under dynamic conditions
• Suitable for Totem Pole PFC, LLC, PSFB and CrCM H-4/Cyclo Inverter applicationsOriginal – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor Limited has introduced the AOLV66935—a 100V High Safe Operating Area (SOA) MOSFET in a compact LFPAK 8×8 package. Engineered to meet the increasing power and reliability demands of 48V hot swap applications in AI servers, the device delivers low conduction losses, robust thermal performance, and space-saving benefits for advanced system architectures.
The AOLV66935 is built on AOS’ proprietary 100V AlphaSGT™ MOSFET platform, which merges low on-resistance trench technology with enhanced SOA capability. The device has been rigorously tested and characterized at both 25°C and elevated operating conditions up to 125°C, ensuring stable and reliable performance in thermally demanding environments typical of AI servers.
Designed for high-current switching, the LFPAK 8×8 package features gull-wing leads and advanced clip technology, achieving a 60% smaller footprint compared to the TO-263 (D2PAK) while maintaining high current handling. The package’s low thermal resistance and compatibility with automated optical inspection (AOI) processes make it well-suited for space-constrained, high-reliability server applications.
Key performance metrics include a low RDS(on) of 1.86 milliohms (max) at Vgs = 10V, which minimizes conduction losses and reduces the number of devices needed in parallel—enabling more compact designs without compromising efficiency or thermal integrity.
“To be able to perform the 48V hot swap in AI servers requires a MOSFET that excels in high current capability while providing exceptional high SOA robustness and reliability,” said Peter H. Wilson, Senior Director of the MOSFET Product Line at Alpha and Omega Semiconductor. “AOS designed the AOLV66935 High SOA MOSFET packaged in our advanced LFPAK 8×8 specifically to meet these demands. Plus, its exceptional low on-resistance significantly decreases conduction losses so fewer devices in parallel are required, allowing designers to meet space limitations.”
Manufactured in IATF 16949-certified facilities, the AOLV66935 is optimized to support the next generation of AI infrastructure requiring high-efficiency power switching and thermal durability under harsh operating conditions.
Original – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor (AOS) has announced its full support for NVIDIA’s newly introduced 800 VDC power architecture, designed to power the next generation of AI data centers with megawatt-scale racks. The company’s portfolio of silicon carbide (SiC) and gallium nitride (GaN) power devices is strategically developed to meet the performance, efficiency, and density requirements of this next-generation infrastructure.
The transition from traditional 54 V to 800 VDC power distribution marks a major redesign in data center architecture. This shift reduces the number of power conversion stages, improves energy efficiency, lowers copper usage, and enhances system reliability. The new architecture also demands advanced wide bandgap semiconductor technologies capable of operating at higher voltages and switching frequencies while maintaining maximum efficiency.
Ralph Monteiro, Senior Vice President of Power IC and Discrete Product Lines at AOS, stated that the company is collaborating with NVIDIA to develop 800 VDC power semiconductors tailored for high-efficiency power delivery across all conversion stages—from AC-to-DC input to DC-to-DC rack-level conversion.
AOS’ wide bandgap expertise positions the company as a key technology enabler for this transition. Its SiC and GaN devices are optimized for each stage of the new 800 VDC architecture:
- High-voltage conversion: AOS’s SiC devices, such as the Gen3 AOM020V120X3 and the topside-cooled AOGT020V120X2Q, support direct conversion from 13.8 kV AC grid input to 800 VDC, simplifying the power chain and improving system efficiency.
- High-density DC-DC conversion: Inside the racks, AOS’s 650 V and 100 V GaN FETs, including the AOGT035V65GA1 and AOFG018V10GA1, enable compact, high-frequency converters that free up rack space and improve cooling performance.
- Packaging innovations: The company’s stacked-die MOSFETs and GaN devices, such as the AOPL68801, share common footprints, allowing designers flexibility in cost and efficiency trade-offs in secondary-side power conversion.
- Multiphase controllers: AOS also provides multi-rail 16-phase controllers for efficient voltage regulation from 54 V to 12 V and beyond, supporting AI processor power delivery.
By supplying key technologies for each conversion stage, AOS enables up to a 5 percent increase in overall power efficiency, a 45 percent reduction in copper usage, and significant improvements in thermal and maintenance performance.
AOS’s continued investment in SiC and GaN development underlines its commitment to driving the scalability, sustainability, and performance of next-generation AI data centers built on 800 VDC power infrastructure.
Original – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor Limited (AOS) announced its AOTL66935 utilizes AOS’ 100V AlphaSGT™ proprietary MOSFET technology which combines the advantages of trench technology for low on-resistance with high safe operating area (SOA) capability that meets 48V hot swap requirements in AI server and telecom applications.
The AOTL66935 hot swap MOSFET prevents damage to the system by limiting the high inrush current with low power losses due to the very low on-resistance (RDS(ON)). These features help deliver increased performance and reliability in harsh application conditions required in latest AI server designs. The AOTL66935 is available in TO-Leadless (TOLL) package, which is 30% smaller footprint compared to TO-263 (D2PAK). AOTL66935 is manufactured in IATF 16949-certified facilities. TOLL package technology is compatible with automated optical inspection (AOI) manufacturing requirements.
“48V hot swap in AI servers requires a MOSFET that excels in high current capability while providing exceptional SOA robustness with high reliability. We designed the AOTL66935 to meet these demands, and the low on-resistance reduces the power losses and can enable less devices in parallel,” said Peter H. Wilson, Sr. Director of MOSFET product line at AOS.
Technical Highlights
Part Number Package VDS (V) VGS (±V) TJ (°C) Continuous Drain Current (A) Pulsed Drain Current (A) RDS(ON) Max (mOhms) @10V @25°C @100°C @25°C AOTL66935 TOLL 100 20 175 360 258 1440 1.95 Pricing and Availability
The AOTL66935 MOSFET is immediately available in production quantities with a lead time of 14-16 weeks. The unit price in 1,000-piece quantities is $4.2.
Original – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor Limited (AOS) introduced the company’s next generation (Gen3) 1200V αSiC MOSFETs designed to maximize efficiency in a growing market of high power applications. These Gen3 MOSFETs provide up to 30 percent improved switching figure-of-merit (FOM) compared to AOS’ previous generation while maintaining low conduction losses at high load conditions. The performance improvements do not compromise ruggedness and reliability, as the Gen3 MOSFETs have full AEC-Q101 qualification, with extended lifetime and HV-H3TRB capabilities.
As power demands surge in electric vehicles (EVs), AI data centers, and renewable energy systems, inefficiencies in power conversion stages can significantly strain electrical supply and cooling systems. For EV designs, AOS’ Gen3 αSiC MOSFETs enable engineers to create higher power density systems with greater efficiency, reducing battery consumption and extending vehicle range. Future AI data centers adopting high-voltage DC (HVDC) architectures, such as 800V or ±400V, will benefit from reduced losses and increased power density to meet growing power requirements. To support these higher system voltages, AOS’ Gen3 1200V devices will be critical for enabling new topologies with the necessary efficiency.
The new AOS Gen3 1200V MOSFETs are available with an on-resistance (Rds(on)) range from 15mOhm (AOM015V120X3Q) to 40mOhm (AOM040V120X3Q) in a TO27-4L package. AOS plans to roll out its Gen3 MOSFETs in additional surface mount and topside cooled packages as well as in case modules. AOS has also qualified a larger Gen3 1200V/11mOhm MOSFET die designed for high-power EV traction inverter modules and is available for wafer sales.
“Electric vehicles and AI are transforming industries, but they require advanced power systems that can maintain efficiency even as energy demands increase,” said David Sheridan, Vice President of Wide Bandgap products at AOS. “We’re excited that this next generation of AOS αSiC MOSFETs can deliver the performance our customers require while making a positive environmental impact.”
Technical Highlights
- Automotive AEC-Q101 Qualified
- Wide compatibility of gate drive voltages (+15V to +18V)
- Up to 30% improved switching FOM
- Extended HV-H3TRB compliant
- Improved UIS and Short Circuit Capability
Original – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor Limited (AOS) announced its Mega IPM7 series intelligent power modules. Offering a highly efficient, compact, and durable design, this new series is optimized for brushless DC (BLDC) motor drive-based designs, including home appliance applications such as air-conditioners, refrigerators, dishwashers, and power tools.
The Mega IPM7 series is AOS’ new generation of intelligent power modules engineered to improve application performance and deliver increased power density all in a rugged, compact footprint that meets increasing space-constrained inverter design requirements. This energy-efficient power module also aids in enhancing the cost-effectiveness of fan motor applications. In addition, the advanced features of the Mega IPM7 series enable it to quickly and accurately detect module temperature, helping achieve highly reliable and long lifetime operation.
The Mega IPM7 series is offered in multiple packages, including the Mega IPM7-DT, the Mega7 DBC, and the Mega7 exposed package, allowing customers to select the package that best suits their heat dissipation performance specifications and other application-specific requirements.
“AOS is committed to staying ahead of our customers’ needs for increased power density and efficiency to help them meet market demands for greater performance, long lifetime, and rugged operation. The introduction of the Mega IPM7 series is specifically designed to boost the competitive advantages of BLDC-based applications. What’s more, AOS gives designers numerous package options to choose the one that ideally meets their performance needs,” said Dino Ge, Marketing Director of IGBT/IPM at AOS.
Technical Highlights
- 600V/1A – 600V/3A
- Compact package: 18mm x 7.5mm
- DBC technology
- 3-phase RC-IGBT inverter topology for motor drives
- Integrated HVIC gate driver including bootstrap circuit
- Integrated over-temperature protection and monitoring functions
Product Selection Table
Part Number Package Input Logic Rated Voltage (V) VCE(SAT) Typ. (V) AIM7DT3AR60V3 IPM-7DA Active High 600 1.5 AIM7E1AR60V1 IPM-7A Active High 600 2.0 AIM7ET1AR60V1 IPM-7B Active High 600 2.0 AIM7DT1AR60V3 IPM-7DA Active High 600 2.0 Original – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor Limited announced it will exhibit and demonstrate the advancements it has made in delivering application-specific power semiconductor, power IC and module solutions at PCIM 2025. Attendees will learn about the company’s groundbreaking power management product innovations that solve critical design challenges in multiple strategic markets and match key application specifications. The AOS products highlighted at PCIM will include:
Booth highlights
- Automotive and Industrial: AOS is introducing its AEC-Q101 qualified Generation 3 1200V SiC MOSFET technology that will provide a 20-30 percent loss improvement compared to the already leading Gen 2 technology. This performance enhancement will not come with a penalty to robustness as the Gen3 technology has improved ruggedness, including full HV-H3TRB compliance for harsh environment applications. These new MOSFETs expand the existing automotive-qualified 650V, 750V, 1200V, and 1700V SiC MOSFETs in through-hole and surface mount/topside cooled packages. The 1200V Gen3 SiC MOSFETs will initially be available from 15mohm to 40mohm in TO247-4L packages with production starting May 2025.
- Intelligent Power Modules, Mega IPM-7: AOS has integrated its latest G2 IGBT and high-voltage gate driver into the world’s most compact package design, delivering mega power of up to 100W for motor control applications. The portfolio covers 600V / (1A-3A) in various package options (Mega IPM-7D, IPM-7DT, IPM-7E) that are ideal solutions for various design requirements.
- Motor Drive ICs: AOS will announce a new range of 60V and 100V driver ICs for power tools, outdoor garden equipment, and e-mobility applications, including a 100V half-bridge driver IC, a 100V 3-phase driver IC, and a 60V 3-phase driver IC. These products all support 100 percent duty cycle operation. Plus, demo boards using AOS’ motor driver IC and AlphaSGT™ MOSFETs (30V-150V) will be featured.
- eFuse: AOS’ Hot Swap Controllers and Power MOSFET combined into a single eFuse package. The eFuse can improve the system’s reliability by isolating the load from the main power rails in case of a fault condition. AOS will announce its latest 12V/60A eFuse products in May 2025.
- State-of-the-art Packaging: AOS’ highly efficient 25V-150V MOSFETs are available in advanced packaging, including a double-sided cooling DFN 5×6 that delivers industry-leading thermal resistance. Also available are two robust packages, LFPAK 5×6 package and the GLPAK™, which features gull-wing leads for enhanced board reliability and larger copper clips that significantly improve current carrying capability. In addition, the GTPAK™ is a topside cooling package designed with a large exposed pad for more efficient heat transfer.
Original – Alpha and Omega Semiconductor
- Automotive and Industrial: AOS is introducing its AEC-Q101 qualified Generation 3 1200V SiC MOSFET technology that will provide a 20-30 percent loss improvement compared to the already leading Gen 2 technology. This performance enhancement will not come with a penalty to robustness as the Gen3 technology has improved ruggedness, including full HV-H3TRB compliance for harsh environment applications. These new MOSFETs expand the existing automotive-qualified 650V, 750V, 1200V, and 1700V SiC MOSFETs in through-hole and surface mount/topside cooled packages. The 1200V Gen3 SiC MOSFETs will initially be available from 15mohm to 40mohm in TO247-4L packages with production starting May 2025.
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Alpha and Omega Semiconductor Limited (AOS) announced the release of two state-of-the-art surface mounting package options for its industry-leading high power MOSFET portfolio. Designed to meet the robust packaging requirements for the most demanding applications that require increased performance and reliability, the new GTPAK™ and GLPAK™ packages will first be available on AOS’ AOGT66909 and AOGL66901 MOSFETs respectively. Combining AOS-proven robust MOSFET technology with advanced packaging know-how, these devices provide low ohmic and high current capabilities, critical to reducing the number of parallel MOSFETs needed in high current designs such as in next-generation e-mobility and industrial applications.
The GTPAK offered with the AOGT66909 is a topside cooling package designed with a large exposed pad for more efficient heat transfer. The topside cooling technology transfers most heat to the heat sink mounted on the top exposed pad. This feature allows the GTPAK to offer a more effective thermal dissipation route than going through the PCB board, allowing a lower-cost PCB, such as FR4, to be used.
The GLPAK offered with the AOGL66901 is a gull-wing version of AOS’ successful TOLL package. It is designed using AOS’ advanced clip technology to achieve a high inrush current rating. The GLPAK with clip technology offers very low package resistance and parasitic inductance, improving EMI performance compared to other package types that employ standard wire bonding.
The GTPAK and GLPAK packages feature gull-wing leads, enabling excellent solder joint reliability even for insulated metal substrates (IMS) applications. This gull-wing construction also provides enhanced thermal cycling for IMS boards and other critical applications that must meet higher reliability objectives. AOS MOSFETs in the new GTPAK and GLPAK packages are manufactured in IATF16949-certified facilities and are compatible with automated optical inspection (AOI) manufacturing requirements.
“We are committed to delivering new solutions to help our customers meet or exceed their power performance requirements. By offering our industry-leading MOSFETs in the new robust GTPAK and GLPAK packages, AOS allows designers to select from two state-of-the-art packaging technologies that offer significant performance improvements. Furthermore, the advanced technologies in our AOGT66909 and AOGL66901 MOSFETs will help simplify new designs by reducing the number of devices needed while also providing the necessary higher current capability that makes overall system cost savings possible,” said Peter H. Wilson, Marketing Sr. Director of MOSFET product line at AOS.
Technical Highlights
Continuous Drain
Current (A)Pulsed Drain
Current (A)RDS(ON) Max
(mOhms)Part Number Package VDS
(V)VGS
(±V)TJ
(°C)@25°C @100°C @25°C @10V AOGT66909 GTPAK 100 20 175 366 258 1464 1.5 AOGL66901 GLPAK 100 20 175 448 316 1790 1.25 Original – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor Limited (AOS) will showcase its complete line of advanced power management solutions at the Applied Power Electronics Conference (APEC). These new products offer advanced features enabling designers to meet power management challenges in several key application areas.
Booth highlights
- Datacenters, AI Server, and High-Performance Graphics Cards: AOS is showcasing two new controllers specifically designed for high-performance GPUs and SoCs used in graphics cards and AI servers. The AOZ73016QI is a 16-phase, 2-rail controller specifically designed to the latest OpenVReg16 (OVR16) specifications. The AOZ73016QI controller design is based on the company’s high-performance, proprietary AOS Advanced Transient Modulator (A2TM) control scheme. In addition to supporting all the basic requirements of the OVR16 specification, the new AOS controller offers value-added features such as RDS(on) and DCR sensing for current monitoring and balance. These features enable AOS’ controller to support DrMOS and Smart Power Stages (SPS) to deliver a complete AI server and graphic card power solution and increase design flexibility. The AOZ73016QI offers full programmability via the PMBUS interface and is also AVS bus compliant. The device features digitally programmable voltage and current regulation loops, minimizing the external components required to implement a solution. It supports electronic control system (ECS) programmability with the ability to update configuration in the field and to pre-program up to six configuration settings with a pin-strap selection. As the world’s first OVR4-22 multiphase PWM controller, the AOZ73004CQI has received full OpenVReg OVR4-22 compliance. Its advanced design helps safely throttle GPU power for maximized performance. It leverages AOS’ breakthrough control scheme that meets stringent power delivery requirements with minimum external components and offers world-class system power efficiency. When paired with AOS’ industry-leading DrMOS and Smart Power Stages, the AOZ73016QI and AOZ73004CQI form a complete solution for GPU or AI SoC power in datacenters, graphics cards, and advanced computing.
- Power Distribution Board for AI Datacenters (Power MOSFETs): AOS is showcasing an application-specific MOSFET AOTL66935 for 48V Hot Swap with High Safe Operating Area (SOA) in TOLL package, and soon available in LFPAK8x8 (AOLV66935). AOTL66935 and AOLV66935 have ultra-low RDS(on) (<1.9mOhm) and high junction temperature ratings at 175°C. AOS designed these MOSFETs with low on-state resistance and robust linear mode performance to protect AI servers and telecom equipment where performance, reliability, and quality are essential.
- High Power Motor Drive Applications: AOS has developed state-of-the-art package options for its industry-leading MOSFET portfolio. Designed to meet the increasing performance and reliability application demands, the LFPAK, GTPAK™, and GLPAK™ packages combined with AOS’ MOSFET technology deliver low ohmic, low parasitic inductance, and high current capability advantages. These packages also feature gull-wing leads, offering a rugged solution for board-level environmental stresses. These features offer key benefits in reducing losses, improving power density, lowering EMI, and enhancing board-level reliability for key applications such as e-mobility, battery management, and other high-current applications. The GTPAK offered with the AOGT66909 is designed to mount a heatsink with a large exposed pad on the package surface. The topside cooling technology effectively transfers most heat to the heatsink instead of PCB, dissipating heat more efficiently. The GLPAK offered with the AOGL66901 is designed to achieve a high inrush current rating using AOS’ advanced clip technology. The Gull-wing design enhances board-level reliability. The GLPAK with clip technology offers very low package resistance and parasitic inductance, improving EMI performance compared to other package types that employ standard wire bonding.
Original – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor Limited (AOS) will exhibit and demonstrate the capabilities of its expanding line of breakthrough application-specific power semiconductor, power IC and module solutions at electronica 2024. Designed to meet the dynamic, important power management challenges in several key application areas and markets, the AOS products highlighted at electronica will include:
- Automotive and Industrial: AOS Gen2 SiC MOSFETs support the needs of a wide array of automotive and industrial applications with its latest advanced packages. AOS offers two AEC-Q101 automotive-qualified surface mount options for extreme power density, including a standard D2PAK-7L and the GTPAK™ with surface mount topside cooling featuring a Kelvin source for the highest efficiency. AOS has several SiC modules that meet higher power charging stations and industrial solar inverter design requirements. Also displayed will be AOS’ comprehensive line 10mOhm-500mOhm, 650V-1700V SiC MOSFETs.
- New Motor Drive ICs: AOS will announce a new range of 60V and 100V driver ICs for power tools, outdoor garden equipment, and e-mobility applications, including a 100V half-bridge driver IC, a 100V 3-phase driver IC, and a 60V 3-phase driver IC. These products all support 100 percent duty cycle operation, and demo boards using AOS motor driver IC and AlphaSGT™ MOSFETs (30V−150V) will be featured.
- Power Supply and Renewable Energy: A significant solution in AOS’ growing High-Voltage Super Junction MOSFET portfolio is its industry-leading optimized αMOS5™ 600V to 700V Super Junction MOSFETs, which helps designers achieve efficiency and density goals while satisfying budget goals. Featuring fast switching, a robust UIS/body diode, and ease of use, these state-of-the-art MOSFETs meet the latest server, telecom rectifier, solar inverter, EV charger, gaming, PC, and universal charging/PD design requirements.
- Innovative Packaging: AOS’ highly efficient 25V−150V MOSFETs are available in advanced packaging, including a double-sided cooling DFN 5×6 that delivers industry-leading thermal resistance. Also available is the newly-released LFPAK 5×6 package, which features gull-wing leads for enhanced board reliability and larger copper clips that significantly improve current carrying capability.
- Automotive and E-mobility: In AOS’ increasing line of automotive MOSFETs, the new automotive-grade 80V (AOTL66810Q) and 100V (AOTL66912Q) MOSFETs in the TOLL package are designed to achieve the highest current capability. The AOS TOLL package utilizes advanced clip technology to achieve a high in-rush current rating and very low package resistance and inductance, enabling improved EMI performance compared to other TOLL packages based on standard wire-bonding technology packages. These new automotive-grade MOSFETs help designers meet the power requirements in electric vehicles, battery management systems (BMS), and high-performance inverters (BLDC motors) for e-mobility.
- Intelligent Power Modules, Mega IPM7: AOS has integrated its latest RC IGBT and high-voltage gate driver into the world’s most compact package design, delivering mega power of up to 100W in motor control applications. The portfolio covers 600V / (1A−3A) in various package options (Mega IPM-7D, IPM-7DT, IPM-7E) that are ideal solutions for various design requirements.
Original – Alpha and Omega Semiconductor
