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Alpha and Omega Semiconductor (AOS) has introduced the AOPL66801, an 80 V MOSFET integrating a half-bridge configuration within its new DFN6×5 AmpStack™ package. The vertically stacked dual-die architecture is designed to increase power density, reduce parasitic inductance, and simplify PCB design for high-performance power conversion applications ranging from AI data center power supplies to industrial equipment and cordless power tools.
Unlike conventional implementations using two separate DFN5×6 MOSFETs, the AOPL66801 integrates both the high-side and low-side MOSFETs into a single compact package. The stacked-die configuration improves PCB space utilization while reducing interconnect parasitics between the two switches.
AOS has also optimized the package’s internal clip structure connecting the half-bridge switch node, minimizing parasitic inductance that typically contributes to voltage overshoot and switching losses.
The integrated package helps reduce phase-node voltage ringing and switching stress compared with discrete implementations by shortening current paths and lowering PCB parasitics.
The device also incorporates a dedicated Kelvin source pin, providing a cleaner gate-drive reference during high di/dt switching events. This improves gate-voltage stability, enhances switching performance, and reduces overall switching losses, particularly in high-frequency power conversion designs.
The AOPL66801 supports demanding thermal and electrical requirements through:
- 80 V drain-source voltage rating
- Integrated half-bridge configuration
- Maximum junction temperature of 175°C
- Low 2.2 mΩ maximum RDS(on) (both high-side and low-side MOSFETs)
- Reduced parasitic inductance through optimized package design
The integrated architecture enables designers to increase converter power density while improving reliability and simplifying PCB layout.
The new AmpStack™ MOSFET is intended for a broad range of high-power applications, including:
- AI data center power supplies
- High-density DC-DC converters
- Industrial power supplies
- Battery-powered power tools
- General high-performance power conversion systems
Key Specifications
Parameter High Side Low Side VDS 80 V 80 V RDS(on) (max) 2.2 mΩ 2.2 mΩ Continuous Drain Current 304 A 215 A Gate Voltage ±20 V ±20 V Total Gate Charge 70 nC 70 nC Original – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor Limited announced that it will showcase its latest power management technologies at PCIM Expo 2026, addressing the growing power demands of AI computing, AI data centers and industrial applications.
Visitors to the AOS booth will have the opportunity to explore a range of new products designed to help engineers address increasingly complex power management challenges. The company’s latest solutions focus on maximizing system performance, improving efficiency, optimizing board space utilization and supporting evolving AI power-delivery requirements.
Among the key technologies on display will be solutions targeting AI core power, AI data center infrastructure and industrial power applications.
For AI Core Power and High-Performance Computing
AOS will present several recently introduced power management solutions developed for AI computing platforms, graphics processing units (GPUs), system-on-chip (SoC) applications and next-generation notebook computers.
Featured products include the AOZ73216QI and AOZ73104QI controllers, designed to support high-performance GPUs and SoCs deployed in AI data center environments.
The company will also highlight its latest USB Type-C Extended Power Range (EPR) 3.1 protection switches, developed to enable safe and reliable power delivery of up to 240W in next-generation USB Type-C applications. The AOZ13058DI provides overvoltage and overcurrent protection for 48V Type-C sink applications, while the AOZ15953DI delivers additional protection functions required for Type-C source applications.
For AI Data Centers
AOS continues to expand its AI data center power portfolio with a range of MOSFET, αSiC and GaN-based solutions designed to support both existing 48V/54V architectures and emerging 800V DC power distribution systems.
The company’s latest devices are designed for high-density DC-DC and AC-DC conversion, offering enhanced thermal performance, reduced switching losses and compact power solutions optimized for AI servers and accelerators.
Highlighted technologies include double-sided cooling MOSFETs, third-generation αSiC devices for high-voltage power conversion, GaN FETs supporting high-frequency and high-density power delivery, and hot-swap solutions engineered to improve system reliability and efficiency in demanding AI infrastructure environments.
For Industrial Power Applications
AOS will also showcase its brushless DC (BLDC) motor solution portfolio, which includes advanced MOSFETs, motor driver ICs and dual-core motor control microcontrollers (MCUs) for applications ranging from power tools and outdoor equipment to e-mobility systems.
The portfolio features low-loss MOSFETs combined with GTPAK™ topside-cooling technology to enhance thermal and electrical performance. Integrated 3-phase and half-bridge motor driver ICs help simplify system design while providing enhanced protection features.
Complementing these products are highly integrated dual-core MCU solutions that support both sensor-less and sensored motor control. These devices incorporate advanced field-oriented control (FOC) and pulse-width modulation (PWM) capabilities to enable efficient operation in high-performance motor drive applications.
AOS will exhibit its latest technologies at PCIM Expo 2026, taking place from June 9 to June 11, 2026, at the Nuremberg Exhibition Centre in Nuremberg, Germany. Visitors can meet the company at Booth #9-539.
Original – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor Limited has inaugurated a new OSAT (Outsourced Semiconductor Assembly and Test) facility in Sanand, Gujarat, in partnership with Kaynes Semicon, marking a significant expansion of its global manufacturing footprint.
The facility has commenced high-volume production of AOS’s IPM5 (Intelligent Power Modules), which integrate 17 dies into a single package to enable advanced motor control and energy-efficient applications. The implementation of AOS’s proprietary IPM5 process at the site represents a key step in localizing advanced semiconductor packaging capabilities in India.
The project aligns with the broader objectives of the India Semiconductor Mission and highlights increasing momentum toward regional diversification of semiconductor supply chains. The rapid execution—from groundbreaking to production in just 14 months—demonstrates accelerated ecosystem development in India’s semiconductor manufacturing landscape.
From a strategic perspective, the collaboration combines AOS’s device and module expertise with Kaynes Semicon’s manufacturing capabilities, creating a scalable platform for both domestic and global markets. The facility is positioned not only to serve India’s growing demand for power semiconductors but also to support international supply chains under a “Made in India, for the World” approach.
From a market standpoint, this move reflects a broader industry trend toward geographic diversification of backend manufacturing, particularly in power semiconductors where packaging and integration (e.g., IPMs) are critical value drivers. It also underscores India’s emerging role as a strategic hub for OSAT and power electronics manufacturing, supported by government initiatives and increasing global investment.
Original – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor announced the release of the AONC40202 (25 V) and AONC68816 (80 V) MOSFETs, designed to support high power density intermediate bus converter (IBC) DC-DC applications in AI servers and data centers.
Both devices are housed in advanced DFN 3.3 × 3.3 mm double-sided cooling, source-down packages, enabling superior thermal performance to meet the stringent requirements of AI infrastructure. The design incorporates an optimized top-clip structure for the exposed drain, allowing efficient heat removal through both the top and bottom of the package. This double-sided cooling approach significantly reduces thermal resistance and improves heat dissipation compared to conventional single-sided cooling solutions.
The MOSFETs achieve a maximum top-side thermal resistance of 0.9 °C/W, supporting improved thermal management and higher system efficiency. The AONC40202 delivers a continuous drain current of up to 405 A and supports operation up to a junction temperature of 175 °C, enabling high current handling and increased power density in compact designs.
In addition, the source-down configuration provides a larger source contact area to the PCB, improving electrical and thermal performance, while the center-gate pin layout simplifies PCB routing and minimizes gate driver connection complexity.
Both devices are built using AOS’ AlphaSGT silicon technology, combining enhanced electrical performance with improved manufacturability and reliability for high-performance computing applications.
Original – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor announced it will showcase its latest power management solutions for AI computing, data centers and industrial applications at the Applied Power Electronics Conference (APEC). The company will present a range of new products designed to address increasing power demands in AI core computing, AI factory infrastructure and industrial power systems.
For AI core power applications, AOS introduced two new controllers targeting high-performance GPUs and system-on-chip processors used in graphics cards and AI data centers. The AOZ73216QI is a 16-phase, 2-rail controller based on the company’s proprietary AOS Advanced Transient Modulator control scheme and supports the OpenVReg16 specification. The AOZ73104QI is a 4-phase controller compliant with OVR4-22 and is designed to safely manage GPU power to maintain performance.
The company also released the AOZ71049QI, AOZ71149QI and AOZ71146QI controllers designed to power Intel IMVP9.3 Panther Lake and Wild Cat Lake CPUs. These devices support configurations of up to 9 phases and 4 rails and are currently in mass production for several OEM and ODM AI notebook platforms.
AOS also introduced the AOZ52986QI Smart Power Stage in a compact QFN3x4 package compliant with Intel’s common footprint specification. The device offers improved efficiency and thermal performance compared with conventional smart power stage solutions. In addition, the AOZ53228QI DrMOS product family provides accurate NCP and OCP protection, longer peak current capability and improved tolerance to current imbalance conditions, targeting GPU and SoC power applications in AI computing systems.
The AOZ13058DI Type-C sink and AOZ15953DI Type-C source protection switches support USB Type-C EPR 3.1 extended power levels up to 240 W. The AOZ13058DI includes overvoltage and overcurrent protection for 48 V sink applications, while the AOZ15953DI provides protection features for Type-C source implementations.
For AI factory infrastructure and data center power systems, AOS highlighted MOSFET solutions designed for high-power-density DC-DC intermediate bus converters used in AI servers. These include the AONC40202 and AONC68816 devices in DFN3.3×3.3 packages with source-down configuration, as well as the AONA66642 and AONA68815 devices in DFN5×6 drain-down packages designed to meet strict thermal requirements.
The company is also showcasing its αSiC and GaN wide bandgap solutions designed for high-voltage, high-frequency operation in AI data center power architectures with 800 V DC distribution. For AC-DC conversion, the third-generation AOM020V120X3 αSiC MOSFET and topside-cooled AOGT020V120X2Q devices provide high-voltage performance with low conduction and switching losses. These devices support applications ranging from power sidecar configurations to direct conversion from a 13.8 kV AC grid input to 800 V DC.
For high-density DC-DC conversion inside server racks, AOS GaN FET products such as the topside-cooled 650 V AOGT035V65GA1 and the 100 V AOFG018V10GA1 enable compact and efficient conversion from 800 V DC to lower voltages required by GPUs and AI accelerators.
The company also introduced the AOLV66935 MOSFET in an LFPAK8×8 package designed for 48 V hot-swap applications in AI servers. The device features an RDS(on) below 1.85 mΩ and a junction temperature rating of 175 °C to meet high safe operating area requirements.
For industrial power applications, AOS presented solutions supporting brushless DC motor systems. The portfolio includes MOSFETs, half-bridge and three-phase motor driver ICs, and dual-core motor control microcontrollers. The GTPAK package provides topside cooling through a large exposed pad designed to transfer heat directly to a heatsink instead of the PCB, improving thermal performance in motor drive applications.
The company’s motor driver ICs integrate features such as bootstrap diodes, adjustable dead-time control, sleep modes and multiple protection functions. AOS also offers dual-core motor control MCUs including the AOZ6812QI and AOZ6816QI, which combine an 8051 core for system control with a motor control engine integrating field-oriented control, PID control and SVPWM modules.
At the conference, AOS will also present an exhibitor session titled “Simplified Thermal Modeling for Power MOSFETs,” scheduled for March 25.
Original – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor Limited (AOS) introduced its αMOS E2™ 600 V Super Junction MOSFET platform and the first device from the family, the AOTL037V60DE2. Targeted at servers, workstations, telecom rectifiers, solar inverters, motor drives and industrial power systems, the platform addresses the core requirements of modern mid- to high-power SMPS and inverter designs: higher efficiency, greater power density, lower system cost and robust operation.
Engineered with a robust intrinsic body diode, αMOS E2™ reliably handles hard-commutation events—such as body-diode reverse recovery during short-circuits or start-up transients—to enhance system resilience. The AOTL037V60DE2, offered in a TOLL package, features a maximum RDS(on) of 37 mΩ. AOS application evaluations demonstrated body-diode ruggedness withstanding di/dt of 1300 A/µs under specified forward-current conditions at a junction temperature of 150 °C. Testing also confirmed superior Avalanche Unclamped Inductive Switching (UIS) capability and longer Short-Circuit Withstanding Time (SCWT) versus competing MOSFETs, translating into stronger system-level reliability under abnormal operating scenarios.
The platform is optimized for critical high-voltage topologies, including the slow leg of totem-pole PFC, LLC resonant converters, PSFB and cyclo-converters, helping designers meet stringent efficiency and power-density targets while maintaining robustness.
Technical highlights
• Optimized for soft-switching topologies with exceptionally low switching losses
• Rugged body diode with reduced Qrr for demanding, high-stress applications
• Enhanced robustness with strong UIS, inrush handling and wide SOA
• Designed to prevent self-turn-on for reliable operation under dynamic conditions
• Suitable for Totem Pole PFC, LLC, PSFB and CrCM H-4/Cyclo Inverter applicationsOriginal – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor Limited has introduced the AOLV66935—a 100V High Safe Operating Area (SOA) MOSFET in a compact LFPAK 8×8 package. Engineered to meet the increasing power and reliability demands of 48V hot swap applications in AI servers, the device delivers low conduction losses, robust thermal performance, and space-saving benefits for advanced system architectures.
The AOLV66935 is built on AOS’ proprietary 100V AlphaSGT™ MOSFET platform, which merges low on-resistance trench technology with enhanced SOA capability. The device has been rigorously tested and characterized at both 25°C and elevated operating conditions up to 125°C, ensuring stable and reliable performance in thermally demanding environments typical of AI servers.
Designed for high-current switching, the LFPAK 8×8 package features gull-wing leads and advanced clip technology, achieving a 60% smaller footprint compared to the TO-263 (D2PAK) while maintaining high current handling. The package’s low thermal resistance and compatibility with automated optical inspection (AOI) processes make it well-suited for space-constrained, high-reliability server applications.
Key performance metrics include a low RDS(on) of 1.86 milliohms (max) at Vgs = 10V, which minimizes conduction losses and reduces the number of devices needed in parallel—enabling more compact designs without compromising efficiency or thermal integrity.
“To be able to perform the 48V hot swap in AI servers requires a MOSFET that excels in high current capability while providing exceptional high SOA robustness and reliability,” said Peter H. Wilson, Senior Director of the MOSFET Product Line at Alpha and Omega Semiconductor. “AOS designed the AOLV66935 High SOA MOSFET packaged in our advanced LFPAK 8×8 specifically to meet these demands. Plus, its exceptional low on-resistance significantly decreases conduction losses so fewer devices in parallel are required, allowing designers to meet space limitations.”
Manufactured in IATF 16949-certified facilities, the AOLV66935 is optimized to support the next generation of AI infrastructure requiring high-efficiency power switching and thermal durability under harsh operating conditions.
Original – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor (AOS) has announced its full support for NVIDIA’s newly introduced 800 VDC power architecture, designed to power the next generation of AI data centers with megawatt-scale racks. The company’s portfolio of silicon carbide (SiC) and gallium nitride (GaN) power devices is strategically developed to meet the performance, efficiency, and density requirements of this next-generation infrastructure.
The transition from traditional 54 V to 800 VDC power distribution marks a major redesign in data center architecture. This shift reduces the number of power conversion stages, improves energy efficiency, lowers copper usage, and enhances system reliability. The new architecture also demands advanced wide bandgap semiconductor technologies capable of operating at higher voltages and switching frequencies while maintaining maximum efficiency.
Ralph Monteiro, Senior Vice President of Power IC and Discrete Product Lines at AOS, stated that the company is collaborating with NVIDIA to develop 800 VDC power semiconductors tailored for high-efficiency power delivery across all conversion stages—from AC-to-DC input to DC-to-DC rack-level conversion.
AOS’ wide bandgap expertise positions the company as a key technology enabler for this transition. Its SiC and GaN devices are optimized for each stage of the new 800 VDC architecture:
- High-voltage conversion: AOS’s SiC devices, such as the Gen3 AOM020V120X3 and the topside-cooled AOGT020V120X2Q, support direct conversion from 13.8 kV AC grid input to 800 VDC, simplifying the power chain and improving system efficiency.
- High-density DC-DC conversion: Inside the racks, AOS’s 650 V and 100 V GaN FETs, including the AOGT035V65GA1 and AOFG018V10GA1, enable compact, high-frequency converters that free up rack space and improve cooling performance.
- Packaging innovations: The company’s stacked-die MOSFETs and GaN devices, such as the AOPL68801, share common footprints, allowing designers flexibility in cost and efficiency trade-offs in secondary-side power conversion.
- Multiphase controllers: AOS also provides multi-rail 16-phase controllers for efficient voltage regulation from 54 V to 12 V and beyond, supporting AI processor power delivery.
By supplying key technologies for each conversion stage, AOS enables up to a 5 percent increase in overall power efficiency, a 45 percent reduction in copper usage, and significant improvements in thermal and maintenance performance.
AOS’s continued investment in SiC and GaN development underlines its commitment to driving the scalability, sustainability, and performance of next-generation AI data centers built on 800 VDC power infrastructure.
Original – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor Limited (AOS) announced its AOTL66935 utilizes AOS’ 100V AlphaSGT™ proprietary MOSFET technology which combines the advantages of trench technology for low on-resistance with high safe operating area (SOA) capability that meets 48V hot swap requirements in AI server and telecom applications.
The AOTL66935 hot swap MOSFET prevents damage to the system by limiting the high inrush current with low power losses due to the very low on-resistance (RDS(ON)). These features help deliver increased performance and reliability in harsh application conditions required in latest AI server designs. The AOTL66935 is available in TO-Leadless (TOLL) package, which is 30% smaller footprint compared to TO-263 (D2PAK). AOTL66935 is manufactured in IATF 16949-certified facilities. TOLL package technology is compatible with automated optical inspection (AOI) manufacturing requirements.
“48V hot swap in AI servers requires a MOSFET that excels in high current capability while providing exceptional SOA robustness with high reliability. We designed the AOTL66935 to meet these demands, and the low on-resistance reduces the power losses and can enable less devices in parallel,” said Peter H. Wilson, Sr. Director of MOSFET product line at AOS.
Technical Highlights
Part Number Package VDS (V) VGS (±V) TJ (°C) Continuous Drain Current (A) Pulsed Drain Current (A) RDS(ON) Max (mOhms) @10V @25°C @100°C @25°C AOTL66935 TOLL 100 20 175 360 258 1440 1.95 Pricing and Availability
The AOTL66935 MOSFET is immediately available in production quantities with a lead time of 14-16 weeks. The unit price in 1,000-piece quantities is $4.2.
Original – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor Limited (AOS) introduced the company’s next generation (Gen3) 1200V αSiC MOSFETs designed to maximize efficiency in a growing market of high power applications. These Gen3 MOSFETs provide up to 30 percent improved switching figure-of-merit (FOM) compared to AOS’ previous generation while maintaining low conduction losses at high load conditions. The performance improvements do not compromise ruggedness and reliability, as the Gen3 MOSFETs have full AEC-Q101 qualification, with extended lifetime and HV-H3TRB capabilities.
As power demands surge in electric vehicles (EVs), AI data centers, and renewable energy systems, inefficiencies in power conversion stages can significantly strain electrical supply and cooling systems. For EV designs, AOS’ Gen3 αSiC MOSFETs enable engineers to create higher power density systems with greater efficiency, reducing battery consumption and extending vehicle range. Future AI data centers adopting high-voltage DC (HVDC) architectures, such as 800V or ±400V, will benefit from reduced losses and increased power density to meet growing power requirements. To support these higher system voltages, AOS’ Gen3 1200V devices will be critical for enabling new topologies with the necessary efficiency.
The new AOS Gen3 1200V MOSFETs are available with an on-resistance (Rds(on)) range from 15mOhm (AOM015V120X3Q) to 40mOhm (AOM040V120X3Q) in a TO27-4L package. AOS plans to roll out its Gen3 MOSFETs in additional surface mount and topside cooled packages as well as in case modules. AOS has also qualified a larger Gen3 1200V/11mOhm MOSFET die designed for high-power EV traction inverter modules and is available for wafer sales.
“Electric vehicles and AI are transforming industries, but they require advanced power systems that can maintain efficiency even as energy demands increase,” said David Sheridan, Vice President of Wide Bandgap products at AOS. “We’re excited that this next generation of AOS αSiC MOSFETs can deliver the performance our customers require while making a positive environmental impact.”
Technical Highlights
- Automotive AEC-Q101 Qualified
- Wide compatibility of gate drive voltages (+15V to +18V)
- Up to 30% improved switching FOM
- Extended HV-H3TRB compliant
- Improved UIS and Short Circuit Capability
Original – Alpha and Omega Semiconductor
