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Micro Commercial Components (MCC) has introduced the MCACLD70N04YHE3-TP, a 40 V N-channel power MOSFET qualified to the AEC-Q101 automotive reliability standard. Designed for high-current automotive power systems, the device combines ultra-low on-resistance with high current capability and efficient thermal performance, making it suitable for electric vehicles, battery management systems, and power distribution applications.
Built on advanced Split Gate Trench (SGT) MOSFET technology, the MCACLD70N04YHE3-TP delivers a maximum RDS(on) of just 0.7 mΩ at a gate-source voltage of 10 V, helping reduce conduction and switching losses while improving overall system efficiency.
The MOSFET supports a continuous drain current of up to 350 A and features an ultra-low junction-to-case thermal resistance of 0.4°C/W, enabling efficient heat dissipation under high-load operating conditions. The device is housed in a compact DFN5060-C package, supporting high power density while minimizing PCB footprint.
With a 40 V drain-source voltage rating, the MCACLD70N04YHE3-TP is optimized for 12 V and 24 V automotive power architectures and is intended for a range of high-current power applications, including:
- Battery management systems (BMS)
- DC-DC converters
- Power distribution modules
- Motor drives
- Load switches
- Automotive power systems
Key specifications include:
- 40 V drain-source voltage
- AEC-Q101 qualification
- Maximum RDS(on) of 0.7 mΩ at VGS = 10 V
- Continuous drain current up to 350 A
- Split Gate Trench (SGT) MOSFET technology
- Junction-to-case thermal resistance of 0.4°C/W
- DFN5060-C package
Original – Micro Commercial Components
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Micro Commercial Components (MCC) has expanded its silicon carbide portfolio with the introduction of the SICX0165G4JQ-TP, a 650 V, 1 A Silicon Carbide (SiC) Schottky Barrier Diode qualified to the AEC-Q101 automotive reliability standard. The device is designed for high-voltage automotive and industrial power conversion applications requiring high switching efficiency, compact size, and robust thermal performance.
The SICX0165G4JQ-TP combines a 650 V reverse voltage rating with a 1 A average forward current in a compact SMA package. Built using silicon carbide technology, the diode features zero reverse recovery current, eliminating reverse recovery losses to reduce switching losses and electromagnetic interference (EMI) while improving overall power conversion efficiency.
The device also offers a maximum forward voltage of 1.3 V to minimize conduction losses and an 18 A surge current capability to withstand inrush currents and transient overload conditions. Its positive temperature coefficient improves current sharing during parallel operation, while a maximum junction temperature of 175°C enables reliable operation in harsh environments with reduced cooling requirements.
The diode is targeted at a range of high-voltage power applications, including switching mode power supplies (SMPS), power factor correction (PFC) circuits, automotive auxiliary power supplies, EV charging systems, motor drives, and solar inverters.
Key specifications include a 650 V reverse voltage rating, 1 A average forward current, AEC-Q101 qualification, zero reverse recovery current, 1.3 V maximum forward voltage, 18 A surge current capability, 175°C maximum junction temperature, positive temperature coefficient, SMA package, and RoHS compliance.
Original – Micro Commercial Components
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Efficient Power Conversion (EPC) will showcase its latest Gen7 gallium nitride (GaN) power technology at PCIM Asia 2026 in Shenzhen, highlighting new devices and reference designs for AI data centers, humanoid robots, drones, motor drives, and high-density DC-DC power conversion. The company will also present live technical sessions covering emerging GaN applications and future power architectures.
EPC’s seventh-generation eGaN® FETs are designed to deliver:
- Ultra-low on-resistance (RDS(on))
- Reduced switching losses
- High-frequency operation
- Improved thermal performance
- Higher power density
- Simplified system integration
The new devices target applications requiring compact, high-performance power conversion, particularly AI infrastructure and intelligent motion systems.
A key focus of EPC’s exhibition will be integrated GaN motor-drive ICs for robotics and electric propulsion.
Featured products include:
- EPC33110 three-phase integrated ePower Stage IC for humanoid robot joints and drone propulsion
- EPC23108/09 integrated ePower Stage ICs supporting up to 100 V and 35 A
- EPC23110/11 integrated ePower Stage ICs supporting up to 100 V and 20 A
The devices are now in mass production and are designed to accelerate deployment of intelligent motion control systems.
EPC will also present several new Gen7 discrete GaN transistors, including:
Device Voltage RDS(on) EPC2366 40 V 0.84 mΩ EPC2379 18 V 0.28 mΩ EPC2370 18 V 0.28 mΩ EPC2378 25 V 0.41 mΩ EPC2377 40 V 0.50 mΩ EPC2375 100 V 0.90 mΩ EPC2376 150 V 1.50 mΩ The devices target:
- AI power supplies
- High-density DC-DC converters
- Robotics
- Advanced motor drives
- High-current synchronous rectification
EPC will demonstrate GaN-based power conversion across the AI server power chain, including:
- EPC91123 – 6 kW isolated 800 V-to-12.5 V ISOP LLC converter
- EPC91134 – 11 kW isolated 400/800 V-to-50 V converter
- A new 800 V-to-6 V, 6 kW ISOP converter making its debut at the exhibition
The company will also showcase point-of-load (PoL) power architectures that efficiently convert 48 V and 12 V intermediate bus voltages to sub-1 V processor supply rails required by next-generation AI accelerators.
Visitors will see GaN-based reference designs powering:
- Humanoid robotic arms
- Drone propulsion systems
- Three-phase motor drives
- High-current inverter platforms
Featured reference designs include:
- EPC91122
- EPC91132
- EPC91121
- EPC91135
- EPC9186HCx
- EPC91128/29/30/31
These demonstrations highlight the advantages of GaN in applications requiring fast transient response, lightweight designs, and high power density.
During PCIM Asia 2026, EPC experts will present a series of technical sessions covering:
- The future evolution of GaN technology
- Scalable motor-control architectures for humanoid robots and drones
- New GaN products for high-density DC-DC converters
- Emerging AI power delivery architectures
Original – Efficient Power Conversion
