Micro Commercial Components (MCC) has expanded its silicon carbide portfolio with the introduction of the SICX0165G4JQ-TP, a 650 V, 1 A Silicon Carbide (SiC) Schottky Barrier Diode qualified to the AEC-Q101 automotive reliability standard. The device is designed for high-voltage automotive and industrial power conversion applications requiring high switching efficiency, compact size, and robust thermal performance.
The SICX0165G4JQ-TP combines a 650 V reverse voltage rating with a 1 A average forward current in a compact SMA package. Built using silicon carbide technology, the diode features zero reverse recovery current, eliminating reverse recovery losses to reduce switching losses and electromagnetic interference (EMI) while improving overall power conversion efficiency.
The device also offers a maximum forward voltage of 1.3 V to minimize conduction losses and an 18 A surge current capability to withstand inrush currents and transient overload conditions. Its positive temperature coefficient improves current sharing during parallel operation, while a maximum junction temperature of 175°C enables reliable operation in harsh environments with reduced cooling requirements.
The diode is targeted at a range of high-voltage power applications, including switching mode power supplies (SMPS), power factor correction (PFC) circuits, automotive auxiliary power supplies, EV charging systems, motor drives, and solar inverters.
Key specifications include a 650 V reverse voltage rating, 1 A average forward current, AEC-Q101 qualification, zero reverse recovery current, 1.3 V maximum forward voltage, 18 A surge current capability, 175°C maximum junction temperature, positive temperature coefficient, SMA package, and RoHS compliance.
Original – Micro Commercial Components