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WeEn Semiconductors has introduced a new family of silicon carbide (SiC) power modules designed for solid-state transformers (SSTs), EV ultra-fast chargers, smart grids, and renewable energy systems. The portfolio includes more than 20 AC-DC and DC-DC power modules with voltage ratings from 1200 V to 2300 V, targeting the growing demand for high-efficiency, medium-voltage power conversion.
Solid-state transformers are gaining momentum as an enabling technology for AI data centers, grid modernization, and electrification, offering conversion efficiencies of approximately 98% while reducing system size and improving power management.
WeEn’s new SiC modules support a broad range of SST topologies, including power conversion from 35 kVAC medium-voltage AC directly to 800 VDC for applications such as AI server power infrastructure.
The new product family includes devices optimized for multiple converter architectures:
- 3-level topology modules for improved electromagnetic interference (EMI) performance
- 2-level topology modules for simplified control and reduced system footprint
- Half-bridge modules for LLC and Dual Active Bridge (DAB) converter stages
- Modules for both primary and secondary power conversion
Package options include:
- B2
- B3
- 62 mm screw-mount
- High-power PCB-mount configurations
The portfolio covers a wide operating range with:
- 1200 V
- 1500 V
- 1700 V
- 2300 V
Devices offer RDS(on) values as low as 1.5 mΩ, enabling lower conduction losses and improved overall system efficiency.
The modules feature:
- Low-inductance package design
- Simplified PCB layout
- Space for gate-driver integration
- Enhanced electrical isolation
- Flexible pin configurations
WeEn also offers customization options, including variations in:
- Direct bonded copper (DBC) substrates
- Module case materials
- Silicone gel encapsulation
- Mounting configurations
- Pin types
- Surface plating
- Pre-applied thermal interface materials
The new SiC module family is intended for a wide range of high-voltage power systems, including:
- Solid-state transformers (SSTs)
- AI data center power infrastructure
- Smart grids
- Renewable energy systems
- EV ultra-fast charging stations
- Medium-voltage power conversion
- Industrial power supplies
The initial portfolio includes more than 20 modules, including:
Device Breakdown Voltage RDS(on) Application INPC modules include WMSC5R0N17B3T 1700 V 5.0 mΩ Multi-purpose half-bridge B3 modules include WMSC5R0HS23B3T 2300 V AC side WMSC5R0F23B3T 2300 V AC side, LLC/DAB Primary WMSC3R0F15B3T 1500 V LLC/DAB Primary WMSC3R0F12B3T 1200 V LLC/DAB Secondary WMSC2R4F12B3T 1200 V LLC/DAB Secondary Half-bridge B2 Modules include WMSC4R0H23B2N 2300 V 4.0 mΩ LLC/DAB Secondary WMSC4R8H23B2N-D 2300 V 4.8 mΩ LLC/DAB Secondary WMSC6R0H12B2N-D 2300 V 6.0 mΩ LLC/DAB Secondary Half-bridge 62 mm module (screw mount) include WMSC2R7H23T2 2300 V 2.7 mΩ AC side WMSC2R7H17T2N-D 1700 V 2.7 mΩ LLC/DAB Primary WMSC7R5H17T2N-D 1700 V 7.5 mΩ LLC/DAB Secondary WMSC1R9H12T2 1200 V 1.9 mΩ LLC/DAB Secondary WMSC1R9H12T2N 1200 V 1.9 mΩ LLC/DAB Secondary High-power half-bridge modules (PCB mount) include WMSC1R5H12B3S 1200 V 1.5 mΩ LLC/DAB Secondary WMSC2R3H12B3S 1200 V 2.3 mΩ LLC/DAB Secondary WMSC4R0H12B2S 1200 V 4.0 mΩ LLC/DAB Secondary WMSC4R0H12B2S-D 1200 V 4.0 mΩ LLC/DAB Secondary WMSC4R0H12B2T-D 1200 V 4.0 mΩ LLC/DAB Secondary The new SiC power modules are available for sampling and volume production. With support for voltages up to 2300 V, multiple converter topologies, and customizable configurations, the portfolio is designed to address a broad range of medium-voltage power conversion applications as adoption of solid-state transformers and high-efficiency DC infrastructure continues to expand.
Original – WeEn Semiconductors
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Efficient Power Conversion (EPC) will participate in Tech Taipei Power 2026, where the company will present its latest gallium nitride (GaN) power technologies for applications including AI data centers, industrial systems, automotive, robotics, and renewable energy. The event will bring together industry experts to discuss advances in power conversion technologies and next-generation power architectures.
A keynote presentation by Alex Lidow, CEO of EPC, will examine emerging trends in AI data center power systems and the technologies required to support rapidly increasing computing workloads.
The presentation will explore how eGaN® FETs and integrated GaN power solutions improve efficiency and performance across the power conversion chain, from high-voltage AC-DC conversion to point-of-load power delivery.
At the conference, EPC will demonstrate how GaN technology delivers advantages over conventional silicon-based power devices, including:
- Higher power conversion efficiency
- Increased power density
- Faster switching speeds
- Smaller power system designs
- Reduced energy losses
These benefits are becoming increasingly important as AI infrastructure demands higher power levels while maintaining energy efficiency.
EPC will highlight GaN solutions for a range of applications, including:
- AI data centers
- Industrial power supplies
- Robotics
- Electric mobility
- Renewable energy systems
- High-performance power conversion
The company will also showcase its latest reference designs and discuss application-specific power system requirements with engineers and system designers attending the event.
Original – Efficient Power Conversion
