WeEn Semiconductors has introduced a new family of silicon carbide (SiC) power modules designed for solid-state transformers (SSTs), EV ultra-fast chargers, smart grids, and renewable energy systems. The portfolio includes more than 20 AC-DC and DC-DC power modules with voltage ratings from 1200 V to 2300 V, targeting the growing demand for high-efficiency, medium-voltage power conversion.
Solid-state transformers are gaining momentum as an enabling technology for AI data centers, grid modernization, and electrification, offering conversion efficiencies of approximately 98% while reducing system size and improving power management.
WeEn’s new SiC modules support a broad range of SST topologies, including power conversion from 35 kVAC medium-voltage AC directly to 800 VDC for applications such as AI server power infrastructure.
The new product family includes devices optimized for multiple converter architectures:
- 3-level topology modules for improved electromagnetic interference (EMI) performance
- 2-level topology modules for simplified control and reduced system footprint
- Half-bridge modules for LLC and Dual Active Bridge (DAB) converter stages
- Modules for both primary and secondary power conversion
Package options include:
- B2
- B3
- 62 mm screw-mount
- High-power PCB-mount configurations
The portfolio covers a wide operating range with:
- 1200 V
- 1500 V
- 1700 V
- 2300 V
Devices offer RDS(on) values as low as 1.5 mΩ, enabling lower conduction losses and improved overall system efficiency.
The modules feature:
- Low-inductance package design
- Simplified PCB layout
- Space for gate-driver integration
- Enhanced electrical isolation
- Flexible pin configurations
WeEn also offers customization options, including variations in:
- Direct bonded copper (DBC) substrates
- Module case materials
- Silicone gel encapsulation
- Mounting configurations
- Pin types
- Surface plating
- Pre-applied thermal interface materials
The new SiC module family is intended for a wide range of high-voltage power systems, including:
- Solid-state transformers (SSTs)
- AI data center power infrastructure
- Smart grids
- Renewable energy systems
- EV ultra-fast charging stations
- Medium-voltage power conversion
- Industrial power supplies
The initial portfolio includes more than 20 modules, including:
| Device | Breakdown Voltage | RDS(on) | Application |
| INPC modules include | |||
| WMSC5R0N17B3T | 1700 V | 5.0 mΩ | |
| Multi-purpose half-bridge B3 modules include | |||
| WMSC5R0HS23B3T | 2300 V | AC side | |
| WMSC5R0F23B3T | 2300 V | AC side, LLC/DAB Primary | |
| WMSC3R0F15B3T | 1500 V | LLC/DAB Primary | |
| WMSC3R0F12B3T | 1200 V | LLC/DAB Secondary | |
| WMSC2R4F12B3T | 1200 V | LLC/DAB Secondary | |
| Half-bridge B2 Modules include | |||
| WMSC4R0H23B2N | 2300 V | 4.0 mΩ | LLC/DAB Secondary |
| WMSC4R8H23B2N-D | 2300 V | 4.8 mΩ | LLC/DAB Secondary |
| WMSC6R0H12B2N-D | 2300 V | 6.0 mΩ | LLC/DAB Secondary |
| Half-bridge 62 mm module (screw mount) include | |||
| WMSC2R7H23T2 | 2300 V | 2.7 mΩ | AC side |
| WMSC2R7H17T2N-D | 1700 V | 2.7 mΩ | LLC/DAB Primary |
| WMSC7R5H17T2N-D | 1700 V | 7.5 mΩ | LLC/DAB Secondary |
| WMSC1R9H12T2 | 1200 V | 1.9 mΩ | LLC/DAB Secondary |
| WMSC1R9H12T2N | 1200 V | 1.9 mΩ | LLC/DAB Secondary |
| High-power half-bridge modules (PCB mount) include | |||
| WMSC1R5H12B3S | 1200 V | 1.5 mΩ | LLC/DAB Secondary |
| WMSC2R3H12B3S | 1200 V | 2.3 mΩ | LLC/DAB Secondary |
| WMSC4R0H12B2S | 1200 V | 4.0 mΩ | LLC/DAB Secondary |
| WMSC4R0H12B2S-D | 1200 V | 4.0 mΩ | LLC/DAB Secondary |
| WMSC4R0H12B2T-D | 1200 V | 4.0 mΩ | LLC/DAB Secondary |
The new SiC power modules are available for sampling and volume production. With support for voltages up to 2300 V, multiple converter topologies, and customizable configurations, the portfolio is designed to address a broad range of medium-voltage power conversion applications as adoption of solid-state transformers and high-efficiency DC infrastructure continues to expand.
Original – WeEn Semiconductors