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ROHM has introduced a new lineup of 600V Super Junction MOSFETs, expanding its portfolio with the R60xxXNx and PrestoMOS™ R60xxWNx series. The new devices are designed to address the growing demand for higher efficiency, increased power density, and improved thermal performance in AI server power supplies, data centers, and industrial equipment.
As AI computing and industrial automation drive higher power consumption, power supply designers face increasing pressure to improve efficiency while reducing system size and heat generation. ROHM’s latest Super Junction MOSFETs target these challenges by combining low-loss performance with compact surface-mount packaging that supports automated assembly and improved thermal management.
The expanded lineup introduces two industry-standard surface-mount packages:
- DFN8080-5L (8.0 × 8.0 × 0.85 mm)
- TOLL (11.68 × 9.9 × 2.3 mm)
These low-profile packages offer excellent heat dissipation while enabling higher power density and more compact power supply designs.
The new MOSFET families feature:
- 600V Super Junction technology
- Gate threshold voltage (VGS(th)) of 3 V to 5 V for compatibility with standard gate-drive circuits
- Improved admittance characteristics compared with previous-generation R60xxYNx and PrestoMOS™ R60xxVNx devices
- Lower conduction and switching losses
- Surface-mount footprints compatible with existing industry-standard designs
The standardized package footprints also simplify product replacement and support second-source procurement strategies.
ROHM offers two series optimized for different design priorities:
R60xxXNx Series
- 21 device variants
- High-speed switching performance
- Designed for applications prioritizing compatibility and versatile operation
PrestoMOS™ R60xxWNx Series
- 11 device variants
- Class-leading high-speed reverse recovery performance
- Optimized for designs requiring maximum efficiency and lower switching losses
The new MOSFETs are intended for a broad range of high-voltage power conversion systems, including:
- AI server power supplies
- Data center power infrastructure
- Industrial power supplies
- Industrial automation equipment
- High-power AC-DC converters
- Other high-density power conversion applications
Original – ROHM
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Swissbit AG and Nexperia have announced a collaboration focused on enabling secure, high-reliability hardware platforms for AI accelerators, cloud computing, hyperscale data centers, enterprise servers, and edge computing systems. The partnership combines Swissbit’s expertise in secure storage and embedded memory with Nexperia’s portfolio of semiconductor building blocks to support next-generation computing infrastructure.
As AI workloads and cloud services continue to grow, system designers face increasing demands for higher performance, improved energy efficiency, stronger security, and long-term system reliability. The collaboration focuses on delivering hardware solutions that meet these requirements while emphasizing quality, transparency, and long product lifecycles.
Swissbit contributes:
- Secure storage solutions
- Embedded memory products
- Data security expertise
- Long lifecycle support
- Predictable product availability
Nexperia complements these capabilities with a broad range of semiconductor components designed for reliable, long-term operation across industrial and computing applications.
Nexperia components already incorporated into Swissbit platforms include:
- Ultra-low-capacitance ESD and surge protection devices for high-speed interfaces such as DDR and PCIe
- MOSFETs and small-signal transistors for efficient power delivery
- Level shifters
- Bus switches
- Interface protection and signal integrity components
These devices help improve system robustness, energy efficiency, and long-term reliability in data-centric infrastructure.
The collaboration supports a wide range of applications, including:
- AI accelerators
- Cloud computing infrastructure
- Hyperscale data centers
- Enterprise servers
- Edge servers
- Industrial automation
- Embedded systems
- Data-centric computing platforms
Original – Nexperia
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Micro Commercial Components (MCC) has expanded its silicon carbide portfolio with the SIC1065G5M-BP, a 650 V, 10 A silicon carbide (SiC) Schottky Barrier Diode (SBD) designed for high-efficiency power conversion applications. Utilizing advanced Merged PiN Schottky (MPS) technology, the device combines zero reverse recovery, low forward voltage, and high-temperature operation to reduce switching losses and improve system efficiency in industrial and energy applications.
As switching frequencies continue to increase in modern power converters, conventional silicon rectifiers become a significant source of switching losses. The SIC1065G5M-BP addresses this challenge by eliminating reverse recovery current, enabling cleaner, more efficient operation in high-frequency power conversion systems.
The device is particularly well suited for applications where efficiency, thermal performance, and reliability are critical.
The diode is built using Merged PiN Schottky (MPS) technology, combining the low-loss characteristics of a Schottky diode with improved surge current capability.
Key electrical features include:
- 650 V reverse voltage rating
- 10 A average forward current
- Maximum forward voltage of 1.7 V
- Zero reverse recovery current
- 60 A non-repetitive surge current capability
The absence of reverse recovery charge significantly reduces switching losses, making the device suitable for high-frequency converter topologies.
The SIC1065G5M-BP supports junction temperatures of up to 175°C, enabling reliable operation in thermally demanding environments while simplifying cooling system design.
Packaged in the industry-standard TO-220AC package, the device provides straightforward heatsink attachment and effective thermal management for higher-power applications.
The new SiC Schottky Barrier Diode is designed for a range of high-efficiency power conversion systems, including:
- Solar inverters
- Power factor correction (PFC) circuits
- Motor drives
- EV charging infrastructure
- Industrial power supplies
Original – Micro Commercial Components
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Infineon Technologies has partnered with ADVANTICS to supply its 1200 V CoolSiC™ MOSFETs and dual-channel EiceDRIVER™ 2EDB9259Y gate drivers for a new generation of liquid-cooled silicon carbide power converters. The collaboration targets high-power applications including megawatt charging systems (MCS) for heavy-duty electric vehicles and marine vessels, as well as battery energy storage systems (BESS), DC microgrids, and AI data center power infrastructure.
The growing electrification of heavy-duty transport requires charging infrastructure capable of delivering significantly higher power levels than conventional fast chargers. Megawatt Charging Systems (MCS) enable substantially shorter charging times for commercial trucks, mining equipment, and marine vessels, helping reduce operational downtime and accelerate the transition toward zero-emission transportation.
Infineon’s silicon carbide power semiconductors provide the efficiency and power density needed to support these next-generation charging platforms.
ADVANTICS’ new converter platform is built around 100 kW liquid-cooled power modules, allowing systems to be scaled into the megawatt range.
Key platform features include:
- Modular 100 kW building blocks
- Scalable to megawatt-class systems
- Bidirectional power conversion
- Wide operating voltage up to 1500 V
- Peak efficiency of up to 98.5%
- Liquid-cooled thermal management
The architecture supports seamless integration with electrical grids, battery storage systems, and high-power EV charging infrastructure.
The platform utilizes:
- Infineon CoolSiC™ 1200 V MOSFETs
- EiceDRIVER™ 2EDB9259Y dual-channel gate drivers
Together, these devices enable:
- Higher conversion efficiency
- Increased power density
- Reduced system losses
- Improved reliability
- More compact converter designs
Silicon carbide technology also enables higher switching frequencies, reducing passive component size while improving overall system performance.
The jointly developed platform addresses a wide range of high-power applications, including:
- Megawatt Charging Systems (MCS)
- Heavy-duty electric trucks
- Electric marine vessels
- Battery energy storage systems (BESS)
- DC microgrids
- AI data center power infrastructure
- Grid-connected industrial power systems
By combining Infineon’s wide-bandgap semiconductor portfolio with ADVANTICS’ expertise in high-power converter design, the collaboration aims to accelerate deployment of efficient, scalable power conversion systems for sectors that have traditionally been difficult to electrify.
The partnership reflects the increasing adoption of silicon carbide technology in megawatt-scale power electronics, where high efficiency, high power density, and reliable operation are essential for next-generation charging infrastructure and energy systems.
Original – Infineon Technologies
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Navitas Semiconductor has issued a statement responding to the patent infringement lawsuit recently filed by Wolfspeed in the U.S. District Court for the District of Delaware. The company disputes the allegations, describes the claims as unfounded, and states that it intends to vigorously defend both its products and its intellectual property while continuing to execute its growth strategy in gallium nitride (GaN) and silicon carbide (SiC) power semiconductors.
Navitas confirmed it is aware of the patent infringement complaint but stated that, due to the ongoing legal proceedings, it will limit its public comments.
The company said it:
- Disputes the infringement allegations
- Intends to vigorously defend itself and its products
- Expects to prevail in the litigation
- Will continue executing its business and product roadmap throughout the legal process
In its statement, Navitas highlighted its long history of developing wide-bandgap semiconductor technologies, emphasizing that its GaN and SiC products are the result of decades of independent research, engineering, and product development.
The company noted that its technology portfolio is supported by a substantial global intellectual property portfolio and reiterated its commitment to respecting intellectual property rights while protecting its own innovations.
Navitas stated that the litigation will not alter its strategic focus on serving rapidly expanding markets for next-generation power semiconductors, including applications such as:
- AI data centers
- Industrial power systems
- Electric vehicles
- Renewable energy
- High-efficiency power conversion
The company reaffirmed its commitment to delivering GaNFast™ and GeneSiC™ product innovations as demand for wide-bandgap semiconductor technologies continues to grow.
Because the matter is now before the courts, Navitas indicated it does not intend to provide additional public commentary on the litigation at this time.
Original – Navitas Semiconductor
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Wolfspeed has filed a patent infringement lawsuit against Navitas Semiconductor in the U.S. District Court for the District of Delaware, alleging that numerous GaN and SiC products infringe multiple Wolfspeed patents. The legal action underscores Wolfspeed’s strategy to protect its wide-bandgap semiconductor intellectual property as competition intensifies across the power electronics market.
According to the lawsuit, Wolfspeed alleges that several major Navitas product families infringe five U.S. patents:
- U.S. Patent No. 8,169,005
- U.S. Patent No. 10,998,418
- U.S. Patent No. 10,886,396
- U.S. Patent No. 10,749,443
- U.S. Patent No. 11,888,392
The complaint identifies a broad range of Navitas products, including:
- GaNFast® GaN power devices
- GaNSlim™ integrated GaN solutions
- GaNSafe® protected GaN devices
- GeneSiC™ silicon carbide MOSFETs
- SiCPAK® power modules
Wolfspeed stated that the lawsuit reflects its commitment to protecting the intellectual property developed through decades of research and development in silicon carbide and gallium nitride technologies.
Wolfspeed described its intellectual property as a strategic asset supporting continued investment in next-generation power semiconductor technologies.
According to CEO Robert Feurle, protecting the company’s patent portfolio is a priority for both Wolfspeed and its shareholders, emphasizing that while the company respects the intellectual property rights of others, it also expects its own innovations to receive similar protection.
Original – Wolfspeed
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Vishay Intertechnology has expanded its TrenchFET® Gen IV MOSFET portfolio with four new 40 V N-channel power MOSFETs designed specifically for motor control applications operating in electrically noisy environments. Housed in the compact PowerPAK® SO-8 package, the new devices combine high gate threshold voltage and optimized gate charge characteristics to improve noise immunity and switching stability in applications such as BLDC motors, drones, power tools, and industrial automation.
The new MOSFET family addresses a common challenge in motor drive systems: unintended turn-on caused by switching noise and high dv/dt transients.
To improve robustness, the devices feature:
- Minimum gate-source threshold voltage (VGS(th)) greater than 2.5 V
- Qgd/Qgs ratios below 1
The elevated threshold voltage helps prevent false triggering, while the optimized gate charge distribution reduces gate voltage fluctuations and improves immunity to switching-induced noise.
The new MOSFETs are well suited for applications requiring efficient synchronous rectification and DC-DC conversion under demanding switching conditions, including:
- Brushless DC (BLDC) motor drives
- Cordless power tools
- Drones and UAVs
- Industrial automation equipment
- General DC-DC converters
The portfolio includes four devices offering different trade-offs between conduction loss and gate charge:
Device Typical RDS(on) Typical Gate Charge SIR5402DP 0.9 mΩ 82 nC SIR5404DP 1.55 mΩ 61.5 nC SIR5406DP 1.9 mΩ 44 nC SIR5408DP 2.5 mΩ 32.6 nC All devices maintain Qgd/Qgs ratios between 0.69 and 0.75, supporting stable gate drive behavior across the family.
Original – Vishay Intertechnology
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onsemi has announced definitive agreements to divest its manufacturing facilities in Tarlac, Philippines, and Mountain Top, Pennsylvania, as part of its ongoing Fab Right manufacturing strategy. The transactions are intended to optimize the company’s global manufacturing footprint, improve cost competitiveness, and support long-term gross margin expansion while maintaining supply continuity for customers.
The divestitures are part of onsemi’s broader Fab Right initiative, which focuses on aligning manufacturing resources with the company’s most competitive, scalable, and technology-focused operations.
By streamlining its manufacturing network, onsemi aims to:
- Improve manufacturing cost structure
- Expand gross margins
- Increase operational efficiency
- Better align production capacity with long-term strategic priorities
onsemi has signed an agreement to sell its Tarlac, Philippines manufacturing facility to Greatek Electronics Inc., a Taiwan-based provider of semiconductor packaging and testing services.
Key details include:
- Expected closing within three to six months
- Subject to customary regulatory approvals and closing conditions
- Facility will continue operating during the transition period
- Long-term supply agreement established to ensure uninterrupted customer supply after closing
The supply agreement is intended to maintain production continuity while leveraging Greatek’s packaging and test capabilities.
The company has also entered into an agreement to divest its Mountain Top, Pennsylvania facility to Silex Microsystems, a Sweden-based semiconductor manufacturer.
Unlike the Tarlac transaction, the Mountain Top sale will follow a longer transition timeline:
- Expected closing in January 2028
- Subject to customary approvals
- Extended transition supports gradual migration of manufacturing to other onsemi facilities
This phased approach is designed to enable an orderly transfer of products and technologies while minimizing disruption for customers.
onsemi expects the manufacturing footprint optimization to generate approximately:
- US$35 million in annual cost savings
- Initial savings beginning in 2027
- Full annual savings realized in 2028
The company views these savings as an important contribution toward improving long-term profitability and manufacturing efficiency.
Both transactions include measures to ensure uninterrupted customer supply throughout the transition periods.
These include:
- Continued operation of the affected facilities until production transfers are completed
- Long-term manufacturing and supply agreements where appropriate
- Planned migration of products to other qualified manufacturing sites within onsemi’s global network
Original – onsemi
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Micro Commercial Components (MCC) has introduced the MCMWF190P06LQ-TP, a compact AEC-Q101 qualified 60 V P-channel MOSFET designed for automotive high-side switching and power management applications. Packaged in a 2 mm × 2 mm DFN2020-6 package with side-wettable flanks (SWF), the device combines low conduction losses, efficient thermal performance, and enhanced manufacturing reliability for space-constrained automotive electronic modules.
As automotive ECUs continue to shrink while integrating more functionality, designers require compact power devices capable of delivering reliable switching performance without compromising efficiency or thermal performance.
The MCMWF190P06LQ-TP addresses these requirements with:
- 60 V drain-source voltage rating
- Maximum 190 mΩ RDS(on) at VGS = -10 V
- Continuous drain current up to 5.7 A
- Advanced Trench MV MOSFET technology
- Compact DFN2020-6 (SWF) package
The 60 V rating provides sufficient voltage margin for 12 V automotive systems that experience transient voltage spikes.
The device utilizes MCC’s DFN2020-6 Side-Wettable Flank (SWF) package, which improves solder joint visibility during manufacturing and enables more reliable automated optical inspection (AOI).
The compact 2 mm × 2 mm footprint also supports high PCB density in modern automotive electronic control modules while maintaining low thermal resistance for efficient heat dissipation.
The new MOSFET is intended for a variety of automotive power management functions, including:
- Reverse battery protection
- High-side load switches
- Body control modules (BCMs)
- Battery management systems (BMS)
- Automotive lighting
- Motor control
- DC-DC converters
The MCMWF190P06LQ-TP is available now as part of MCC’s expanding automotive MOSFET portfolio, providing designers with a compact, automotive-qualified solution for high-side switching and power management applications in next-generation vehicle electronics.
Original – Micro Commercial Components
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Infineon Technologies announced that the U.S. International Trade Commission’s (ITC) Final Determination, issued on May 7, 2026, has become final following the expiration of the Presidential Review Period. The decision confirms that Innoscience infringed an Infineon gallium nitride (GaN) patent and upholds the associated exclusion and cease-and-desist orders, resulting in import and sales restrictions on the infringing products in the United States.
With the conclusion of the Presidential Review Period, the ITC’s ruling is now fully enforceable. The decision confirms infringement of an Infineon GaN patent by Innoscience and prohibits the importation and sale of the affected products in the U.S. market.
Infineon stated that the outcome reinforces the strength of its intellectual property portfolio and its commitment to protecting innovation and promoting fair competition in the GaN semiconductor industry.
The U.S. ruling follows a series of legal victories for Infineon in Germany involving its GaN patent portfolio.
These German decisions prohibit the import, sale, and marketing of specified patent-infringing Innoscience products in Germany while also awarding damages to Infineon.
Infineon emphasized the growing importance of gallium nitride technology across next-generation power electronics applications, including:
- AI data center power infrastructure
- Renewable energy systems
- Industrial automation
- Electric vehicles
GaN devices offer higher switching speeds, greater power density, lower switching losses, and more compact system designs than conventional silicon technologies, enabling improved energy efficiency and reduced thermal management requirements.
The company also noted that its GaN intellectual property portfolio comprises approximately 450 patent families, supported by its 300 mm GaN manufacturing platform, which it views as a key differentiator for scaling next-generation power semiconductor production.
Original – Infineon Technologies
