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EPC will exhibit its latest advancements in high-performance GaN technology at PCIM Europe 2025, taking place 6–8 May in Nuremberg, Germany.
Visit EPC in Hall 9, Stand 318 to see a wide array of GaN-based power solutions powering next-generation applications—from high-density computing to motor drives for humanoid robots, automotive electrification, and satellites. Live demonstrations will highlight EPC’s latest GaN FETs and ICs in real-world applications that emphasize smaller size, higher efficiency, and lower cost compared to silicon solutions.
Motor Drives: Powering Robotics, Automation, and More
From industrial automation to smart consumer devices, GaN-based motor drives offer higher efficiency, smaller size, and improved performance compared to traditional silicon solutions. EPC’s latest GaN technology powers motor drive applications across a wide range of industries, including:
- Humanoids & Quadrupeds – Enabling next-generation robotics with faster response times, lighter joints, and greater energy efficiency.
- Drone Motors – Delivering longer flight times, compact size, and precise control through high-speed switching.
- Power Tools – Extending battery life and increasing torque with compact, high-efficiency GaN motor drives.
- Vacuum Cleaners & Delivery Robots – Empowering smarter, more autonomous systems with high power density and thermal performance.
48 V = GaN: Powering the Future of High-Density Computing
Today’s high-density computing environments demand compact, efficient power solutions to meet rising performance and thermal requirements. EPC’s latest GaN technology for AC/DC server power and 48 V DC-DC power conversion delivers reduced losses, increased power density, enhanced thermal performance, and best-in-class efficiency—enabling more computing in less space.
Visit EPC at PCIM Europe 2025:
- Schedule a Meeting: EPC’s technical experts, including CEO Dr. Alex Lidow, will be on-site to discuss how GaN is driving innovation across multiple industries. To schedule a meeting during PCIM contact info@epc-co.com
- Exhibition Booth Hall 9, Stand 513: Visit EPC’s booth to explore our comprehensive portfolio of GaN-based solutions and applications.
- Technical Presentations: Attend our technical sessions to gain insights into the latest trends and advancements in GaN power conversion technology.
- GaN-Based 5 kW Four-Level Totem-Pole PFC Converter for AI Servers Power Supply; Speaker: Marco Palma
- Bodo’s Power Systems – GaN Expert Panel at PCIM 2025; Panelist: Alex Lidow, Ph.D.
- 5 kW Isolated 400 V to 50 V, DC-DC Converter for Server Power Supplies; Speaker: Michael de Rooij, Ph.D.
- Design of GaN FET-Based Multilevel Three-Phase Inverter for High Voltage Automotive Applications; Speaker: Fabio Mandrile, Polytechnical University of Turin
- Next Generation GaN Platform for High-Density DC-DC Converters; Speaker: Alex Lidow, Ph.D.
“PCIM Europe is the ideal stage to show how EPC’s GaN is transforming power electronics—from server power to robotics, we’re helping engineers unlock the full potential of wide bandgap solutions,” said Nick Cataldo, VP of Sales and Marketing at EPC.
Original – Efficient Power Conversion
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Rohde & Schwarz will showcase its latest solutions and advanced techniques for testing and analyzing power electronic systems and components at PCIM Expo 2025 in Nuremberg, Germany. At the company’s booth (hall 7, booth 166), the spotlight will be on solutions utilizing the company’s cutting-edge test instruments to address the challenges of debugging next generation wide bandgap semiconductors like GaN and SiC.
Rigorous testing and advanced characterization methods help design engineers enhance the performance, efficiency, and reliability of their power electronic designs based on SiC and GaN devices, used in pioneering industries like e-mobility, renewable energy or AI data centers. Rohde & Schwarz will bring a selection of its comprehensive T&M portfolio to booth 166 in hall 7 of PCIM Expo 2025, taking place from May 6 to 8 at the Nuremberg Exhibition Center. The test solutions are tailored for power electronics applications where high efficiency, fast switching speeds, improved power density and high-temperature operation matter.
At the center of the presented setups will be the R&S RT-ZISO isolated probing system from Rohde & Schwarz. This next generation isolated probe has set new standards with unprecedented accuracy, sensitivity, dynamic range and bandwidth for wide bandgap (WBG) power designs with SiC and GaN. Rohde & Schwarz will showcase the advantage of the Isolated probing system over single-ended probes in a setup to investigate the switching behavior of a GaN-MosFET.
Double pulse testing is a method for evaluating the switching performance of SiC and GaN based power devices. Rohde & Schwarz is collaborating with industry expert PE-Systems GmbH for a stable and accurate approach to double pulse testing using the R&S®MXO 5 next generation oscilloscope from Rohde & Schwarz with eight channels in combination with the R&S RT-ZISO. At PCIM, visitors can experience accurate, reliable and fast double pulse testing on 1200 V SiC devices from Wolfspeed, typically used as traction inverters in the automotive industry.
Loadjump testing used to be a time-consuming manual process to verify a Buck converter’s load step response at varying input voltage levels, using only a few reference points. For this application, as well, Rohde & Schwarz collaborates with PE-Systems GmbH, who offers a test automation software. In combination with the MXO 5 oscilloscope and the R&S RT-ZISO isolated probing system, this solution not only reduces overall testing time but also maintains the same number of test points. At PCIM, the companies demonstrate automated loadjump testing of a Buck converter of Monolithic Power Systems, Inc. within a voltage range of 6V to 60V. The setup even allows for more reference points within the same timeframe and can be extended to include temperature control, facilitating the full automation of input voltage, load current, and temperature profile variations.
Rohde & Schwarz will also showcase its solutions for component characterization. The R&S®LCX LCR meters with customized impedance measurement functions are suitable for all discrete passive components up to 10 MHz. Users can easily characterize the voltage dependence of capacitances in core components of power converters like MLCCs with the R&S LCX. Combined with a sweep software tool, users can perform comprehensive sweep measurements and display them in numerous charts. The MFIA impedance analyzer from Zurich Instruments AG (a subsidiary since 2021) is capable of impedance spectroscopy for both low impedance components such as shunt resistors and DC-link capacitors and high impedance systems. It offers measurement modes for impedance analysis over frequency and time as well as other features such as integrated oscilloscope and spectrum analyzer capabilities.
Dr. Philipp Weigell, Vice President of the Industry, Components, Research & University Market Segment at Rohde & Schwarz, explains: “PCIM Expo is an important venue for us to highlight our advancements in wide bandgap semiconductor testing. Testing plays a critical role to improve power efficiency, reduce size, and manage heat more effectively in power conversion applications used in AI data centers, for instance. Through collaboration with industry experts and with our advanced testing solutions we enable our customers to develop reliable and efficient systems that meet the rigorous demands of modern data processing applications.”
Rohde & Schwarz will present these and other advanced test solutions at PCIM Expo 2025, from May 6 to 8, at booth 166, hall 7 of Nuremberg Exhibition Center. For more information on power electronics test solutions from Rohde & Schwarz, visit: https://www.rohde-schwarz.com/power-electronics
Original – Rohde & Schwarz
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Fraunhofer IAF has developed a monolithic bidirectional switch with a blocking voltage of 1200 V using its GaN-on-insulator technology. The switch contains two free-wheeling diodes and can deliver performance and efficiency benefits in bidirectional chargers and drives for electric vehicles as well as in systems for generating and storing renewable energy. The results will be presented together with other developments in power electronics from May 6 to 8, 2025, at PCIM Europe in Nuremberg.
Technological innovations in power electronics are not only essential for the success of the energy transition, they also provide sustainable support for economic development in Europe. The Fraunhofer Institute for Applied Solid State Physics IAF develops power electronic components based on the wide-bandgap compound semiconductor gallium nitride (GaN) to enable further developments in electric mobility, the energy industry, and climate technology.
Most recently, Fraunhofer IAF has made significant progress in high-voltage and low-voltage components: At PCIM Europe 2025, researchers will present a highly integrated bidirectional switch (MBDS) with a blocking voltage of 1200 V. They will also demonstrate the use of a conventional GaN transistor with a gate contact as a bidirectional switch in a 3-level T-type converter. Both results were achieved as part of the GaN4EmoBiL project funded by the German Federal Ministry for Economic Affairs and Climate Action (BMWK).
“Geopolitical challenges such as the current tariff conflicts are an opportunity for European economies to gain technological advantages in the key areas of energy generation and mobility by developing their own solutions in power electronics,” emphasizes Achim Lösch, Business Developer for High Frequency and Power Electronics at Fraunhofer IAF.
“The added value of innovative power electronics is obvious: Achieving more power, better efficiency, and greater compactness at the same time advances the relevant technologies of the future: Electric cars charge faster and energy from renewable sources can be converted and stored more efficiently. At Fraunhofer IAF, we are working intensively to provide positive impetus in these important areas through innovative GaN-based components,” explains Lösch.
Researchers at Fraunhofer IAF have developed a GaN MBDS suitable for the 1200 V voltage class with integrated free-wheeling diodes and successfully integrated it into their own GaN technology. The researchers used the new GaN-on-insulator technology of Fraunhofer IAF for the manufacturing: Highly insulating materials such as silicon carbide (SiC) and sapphire are used as the carrier substrate for the GaN power semiconductor to improve the insulation between the components and increase the breakdown voltage.
The MBDS blocks voltage and conducts current in two directions, which saves chip space and reduces conduction losses as there is only one split depletion region. The GaN MBDS can be used in grid-connected power converters for energy generation and storage as well as electric drive systems. In these applications, the MBDS enables the development of systems in the 1200 V class.
Developers are working intensively on electric vehicles in this voltage class as increasing blocking voltages offer significant advantages in terms of everyday usability: Charging power increases and energy losses during operation decrease as a result of lower resistance. Electric cars with 400 V currently dominate the market, but 800 V technology is gaining ground. The leap to 1200 V has a positive effect on the long-distance capability of electric cars and the utility value of electric trucks.
The 1200 V GaN MBDS with integrated peripherals will be presented by Dr. Michael Basler at the PCIM Conference on May 8 from 10:10 to 10:30 a.m. in the oral session on GaN Devices II on Stage München 1. It is based on Basler’s paper “Highly-Integrated 1200 V GaN-Based Monolithic Bidirectional Switch,” which will be published in conjunction with PCIM 2025.
Fraunhofer IAF has also made progress in the field of multi-level converters with bidirectional switches for blocking voltages up to 48 V: Researchers have used a conventional single-gate HEMT (high electron mobility transistor) based on the aluminum gallium nitride/gallium nitride (AlGaN/GaN) compound semiconductor heterostructure in a low-voltage 3-level T-type converter as a bidirectional switch, thereby achieving simpler control of the transistor than with a bidirectional transistor with two gates for such topologies. Like the 1200 V MBDS, this innovative approach enables simpler control in addition to a space-efficient component design.
On May 6, Daniel Grieshaber will present the results shown in his paper “Investigation of a Single-Gate GaN HEMT as Bidirectional Switch in a Low Voltage Multilevel Topology” at the PCIM Conference Poster Session in the GaN Devices I section from 3:30 to 5:00 p.m. in the foyer.
In addition to innovations in the field of bidirectional switches, researchers at Fraunhofer IAF are working along the entire semiconductor value chain on materials, components, modules and subsystems for GaN-based power electronics in the voltage classes 48 V, 100 V, 200 V, 600 V and 1200 V. The current focus is on lateral and vertical components, monolithic integration, and highly insulating substrates such as sapphire or SiC. In addition to the results presented at PCIM 2025, Fraunhofer IAF is already working on components in the 1700 V class.
Fraunhofer IAF will be presenting an overview of its research and development portfolio in power electronics at the PCIM Expo in Hall 6, Booth 260, from May 6 to 8. Among others, an epitaxial 8-inch GaN wafer, processed 4-inch GaN-on-SiC and GaN-on-sapphire wafers, GaN power ICs, integrated lateral and vertical GaN components and 600 V half-bridge modules based on GaN are being exhibited.
At the PCIM Conference, Dr. Richard Reiner will also summarize the latest power electronics developments at Fraunhofer IAF in his presentation “Lateral, Vertical, Bidirectional! Innovations and Progress in GaN Devices and Power ICs.” It will take place on May 7 from 10:50 to 11:10 a.m. on the Technology Stage.
Original – Fraunhofer IAF
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Cambridge GaN Devices (CGD) will demonstrate at PCIM how GaN technology is delivering improved performance in higher power applications. The company’s ICeGaN® technology brings the benefits of GaN – including efficiency, size and thermal management – to applications including servers, data centres, inverters, industrial power supplies and automotive EVs. A highlight of the booth will be the company’s world’s-first Combo ICeGaN innovation which pairs the company’s ICeGaN GaN ICs with IGBTs to address electric vehicle inverters at 100kW+, improving efficiency over traditional silicon solutions and reducing cost when compared with silicon carbide solutions.
HENRYK DABROWSKI | SENIOR VICE PRESIDENT OF GLOBAL SALES, CGD
“ICeGaN redefines gallium nitride. By integrating the interface circuitry on the GaN chip along with the HEMT, ICeGaN is very easy to use. Devices can be easily driven using a standard power IC driver. Moreover, it is very rugged and robust, and includes extra protection circuitry, so reduces component count. Engineers are now understanding the true value proposition of ICeGaN, and are beginning to realize that GaN may replace SiC in certain high efficiency designs, due to its lower manufacturing cost. PCIM attracts key professionals from all over the world, and we are looking forward to showing them what ICeGaN can do, especially for higher power applications.”During PCIM, CGD will give the following Technical Session and Exhibitor Presentation:
ICeGaN benefits in Motor Drive Inverters through the evaluation of Electrical Performance under Application Conditions This presentation explores the advantages of ICeGaN technology in motor drive inverters, focusing on its impact on electrical performance. Key topics include improved efficiency, reduced power losses, enhanced thermal management, and the potential for compact system design. Through application-specific evaluations, the discussion highlights how GaN-based solutions outperform traditional silicon inverters, offering transformative benefits for modern motor control systems.
Speaker: Farhan Beg, Director of Application Engineering, CGD
Date: Tuesday May 6
Time: 12:55-13:15
Location: Hall 4, Booth 4-435ICeGaN Leads GaN Integration for High-Power Applications Cambridge GaN Devices’ renowned ICeGaN technology simplifies GaN integration, offering a cost-effective solution in system level for high-power applications in the 1kW to 100kW range. Now available on the market, the P2 product series featuring 25 mΩ and 55 mΩ GaN chips have demonstrated high performance in Automotive Inverter and Industrial Motor Drive applications. With high dV/dt immunity, 3x gate robustness vs incumbent GaN technologies and true 0V Turn Off, ICeGaN®️ ensures ease of use, optimized efficiency and reliability. In addition, P2 enables paralleling with negligeable design effort. This presentation will guide you through real-world use cases.
Speaker: Henryk Dabrowski, Senior Vice President, Global Sales, CGD
Date: Wednesday May 7
Time: 10:25-10:45
Location: Hall 5, 135On booth 7. 657, CGD will present demos that highlight the benefits of employing its ICeGaN technology in three application spaces: Motor Drives; Data Centres; and Electric Vehicles.
Motor Drives
- 650 V 25 mΩ half bridge for 2-6 kW systems. The design uses the BHDFN enhanced bottom-side cooled package which is capable of dissipating 10 W (TA = 50°C)
- Targeting home appliances this 400 W design in partnership with Qorvo demonstrates how easily MOSFETs can be replaced with ICeGaN, eliminating fans, heatsinks and bulky and expensive resistors, increasing efficiency and reducing size.
- This 800 W EVK, also in partnership with Qorvo, targets industrial applications. ICeGaN’s integrated Miller Clamp eliminates the need for negative gate voltage for turn-off, and there is no need for a special GaN driver. The design increases efficiency and provides a quiet drive profile
- This IPM uses ICeGaN to run cooler and eliminate heatsinks, providing lower deadtime and less distortion.
- Demo compares three-phase inverter designs using a shunt resistor with the simpler, lower BOM count ICeGaN design with integrated Current Sense.
Data Centres
- 650 V 25 mΩ half bridge for 2-6 kW systems. The design uses the BHDFN enhanced bottom-side cooled package which is capable of dissipating 10 W (TA = 50°C)
- 3kW bridgeless Totem Pole PFC reference design hits 99.1% efficiency levels, meets IEC 61000–3–2 and exceeds 80 Plus Titanium specs. The modular design facilitates comparison with different controllers and power stages.
- 2.5 kW CCM Totem-Pole PFC demo board delivers high efficiency and enables easy interfacing to an analogue PFC controller. Co-designed with Inventchip, this solution features optimised AC current zero crossing control and low THD.
- 3kW LLC test board for a 400 V to 48 V single stage LLC converter. This ICeGaN design enables high frequency LLC for high power density DC/DC.
- Power Matrix 2kW/3kW quarter brick isolated DC/DC converter with a peak efficiency of 98% and a power density of 1.16kW/in3. Measuring just 63.5×36×12.4mm it demonstrates ultra-high power density, and supports multiple modules in parallel.
- 650 V 25 mΩ full bridge 4-10 kW reference design. The DHDFN package featuring double side cooling reduces thermal resistance enabling the highest power density.
Electric Vehicles
- Developed with IFP Energies nouvelles (IFPEN), a major French public research and training organization in the fields of energy, transport and the environment, this 3-Level ANPC EV inverter for 800 V traction develops 100 kW. Enhanced motor performance, reliability and efficiency with ICeGaN in 3-level NPC topology increases inverter efficiency, lowers THD and reduces dV/dt at the motor. Reduced switching losses enables power density of 25-30 kW/l.
- Using ICeGaN in parallel configuration enables higher power levels – to 10 kW in this example. The dual-side cooled DHDFN package with dual-gate pinout simplifies PCB routing, and ICeGaN’s innovative control creates superior current sharing. Clean switching allows for full current (400 V, 120 A) in double-pulse test.
- 650 V 25 mΩ full bridge 4-10 kW reference design. The DHDFN package featuring double side cooling reduces thermal resistance enabling the highest power density.
GIORGIA LONGOBARDI | FOUNDER AND CEO, CGD
“CGD’s latest P2 series ICs feature RDS(on) levels down to 25 mΩ, supporting multi kW power levels with the highest efficiency. We have built a secure supply chain including manufacturing deals with TSMC and ASE, and distribution through Digi-Key. With Combo ICeGaN, our technology roadmap has been extended to address EV applications to over 100kW, and we are sure that designers will be inspired by the new capabilities ICeGaN delivers.”Original – Cambridge GaN Devices
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In a major step toward advancing renewable energy technologies, SMA Solar Technology AG has selected a new high-performance power module from Semikron Danfoss, integrating ROHM’s latest 2kV Silicon Carbide (SiC) MOSFETs. This collaboration marks a milestone in the evolution of high-voltage solar inverter solutions.
The new SEMITOP E1/E2 SiC power module from Semikron Danfoss combines compact design with cutting-edge 2kV-rated SiC MOSFETs from ROHM. Tailored specifically for solar applications, the solution addresses the rising demands for higher voltage, increased efficiency, and greater system reliability.
Key Benefits:
- Higher System Voltage: Enables 1500V DC systems with reduced derating margins, maximizing energy yield.
- Improved Efficiency: SiC technology dramatically reduces switching losses compared to traditional silicon, enhancing overall inverter performance.
- Compact Design: Supports smaller inverter footprints and lower system costs due to reduced cooling requirements and simpler circuitry.
- Extended Lifetime: Enhanced reliability and ruggedness, crucial for long-term solar energy deployments.
By adopting Semikron Danfoss’ advanced SiC modules, SMA positions itself at the forefront of the solar inverter industry, delivering more efficient and resilient solutions for the fast-growing global renewable energy market.
This partnership underlines the growing importance of wide-bandgap semiconductors like SiC in renewable energy applications. As the demand for high-efficiency, high-voltage solar inverters continues to soar, collaborations like this set new industry benchmarks for performance and sustainability.
Original – Semikron Danfoss
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Mitsubishi Electric Corporation has announced its consolidated financial results for fiscal year 2025 (April 1, 2024 – March 31, 2025), reporting an overall strong performance despite global economic uncertainties.
Total revenue rose 5% year-over-year to 5,521.7 billion yen, with operating profit increasing by 19% to 391.8 billion yen. Among its business segments, the Semiconductor & Device division remained a key contributor to the company’s stability and future growth prospects.
Semiconductor & Device Business Highlights:
- Revenue: 259.9 billion yen, flat year-on-year
- Operating Profit: 40.6 billion yen, up 36% year-on-year
While the semiconductor business line faced headwinds in industrial applications, Mitsubishi Electric recorded solid growth in power modules for railway and power transmission applications, as well as optical communication devices, helping offset some sectoral declines.
The segment’s sharp improvement in profitability was driven by:
- Better product mix with stronger contributions from high-margin sectors.
- Strategic cost control measures and operational efficiency improvements.
- Benefits from favorable currency exchange rates.
This strong performance was achieved even as demand for industrial power modules softened, highlighting Mitsubishi Electric’s resilience in the face of market shifts.
Mitsubishi Electric projects further expansion of its semiconductor operations into critical growth areas, including:
- Railway electrification
- Power infrastructure upgrades
- High-speed data communication networks
The company continues to invest in its semiconductor technology, targeting new innovations to support energy efficiency, mobility, and communication infrastructure solutions.
For fiscal 2026, Mitsubishi Electric expects to maintain steady revenue across its Semiconductor & Device segment and aims to enhance profitability through continued technological advancements and market diversification.
Original – Mitsubishi Electric
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Navitas Semiconductor announced actions by its board of directors to advance the company’s growth strategy. These corporate governance enhancements reflect the board’s ongoing commitment to stockholder engagement and value creation for all Navitas stakeholders.
“We have taken an important step forward by strengthening our corporate governance and further aligning the board’s interests with those of our stockholders,” said Gene Sheridan, Navitas’ chief executive officer and co-founder. “We are confident that we have the right strategy in place to continue delivering disruptive advancements in our target markets. With the updates announced today, our board and leadership team are well positioned to capitalize on Navitas’ multi-billion dollar market opportunities and generate value.”
Board and Leadership Updates
Navitas’ board has appointed Richard Hendrix as its chair, effective immediately. Mr. Hendrix joined Navitas’ board as an independent director in 2021 and is chair of the audit committee and a member of the compensation committee. He has more than 30 years of capital markets leadership and advisory experience. He succeeds Mr. Sheridan, who will remain on the board as a director and continue as Navitas’ chief executive officer.
“I am honored to chair Navitas’ board as we work to advance our strategy and continue to enable a revolution in power electronics. Our board remains committed to maintaining strong corporate governance and creating value for our stockholders,” said Mr. Hendrix.
Daniel Kinzer, Navitas’ chief technology officer, chief operating officer and co-founder, has resigned from his executive roles and as a member of the board. Mr. Kinzer will continue to serve in an advisory role supporting technology and product innovation in the area of GaN technology.
Mr. Hendrix continued, “On behalf of the Board, I would like to thank Dan for his invaluable vision and leadership in building Navitas into the only pure-play, next-generation power semiconductor company. We appreciate his continued contributions as we embark on this next chapter of the company’s growth.”
In connection with Mr. Kinzer’s departure from the board, the board intends to appoint an independent director to stand for election as a Class I director at the 2025 annual stockholders’ meeting, along with Mr. Sheridan and Ranbir Singh. Additional details will be provided in the Company’s definitive proxy statement for the meeting to be filed with the U.S. Securities and Exchange Commission (SEC).
Formation of Executive Steering Committee
Navitas also announced the formation of an executive steering committee of the board, which will be responsible for a number of initiatives that include oversight and input on:
- Expense management and defining an accelerated path to profitability;
- Acceleration of the company’s product and technology roadmap;
- Enhancement of the company’s go-to-market and partnership strategies; and
- Appointment of operating, sales and technology executives.
The committee will work closely with Mr. Sheridan to ensure the effective execution of these strategic priorities. The committee will be chaired by Dr. Singh and include Mr. Hendrix and David Moxam, chair of the compensation committee and a member of the audit committee, as members.
In connection with the actions announced today, the company has entered into a cooperation agreement with Dr. Singh following constructive engagement. Details of the agreement will be provided in forthcoming SEC filings.
Original – Navitas Semiconductor
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Alpha and Omega Semiconductor Limited announced it will exhibit and demonstrate the advancements it has made in delivering application-specific power semiconductor, power IC and module solutions at PCIM 2025. Attendees will learn about the company’s groundbreaking power management product innovations that solve critical design challenges in multiple strategic markets and match key application specifications. The AOS products highlighted at PCIM will include:
Booth highlights
- Automotive and Industrial: AOS is introducing its AEC-Q101 qualified Generation 3 1200V SiC MOSFET technology that will provide a 20-30 percent loss improvement compared to the already leading Gen 2 technology. This performance enhancement will not come with a penalty to robustness as the Gen3 technology has improved ruggedness, including full HV-H3TRB compliance for harsh environment applications. These new MOSFETs expand the existing automotive-qualified 650V, 750V, 1200V, and 1700V SiC MOSFETs in through-hole and surface mount/topside cooled packages. The 1200V Gen3 SiC MOSFETs will initially be available from 15mohm to 40mohm in TO247-4L packages with production starting May 2025.
- Intelligent Power Modules, Mega IPM-7: AOS has integrated its latest G2 IGBT and high-voltage gate driver into the world’s most compact package design, delivering mega power of up to 100W for motor control applications. The portfolio covers 600V / (1A-3A) in various package options (Mega IPM-7D, IPM-7DT, IPM-7E) that are ideal solutions for various design requirements.
- Motor Drive ICs: AOS will announce a new range of 60V and 100V driver ICs for power tools, outdoor garden equipment, and e-mobility applications, including a 100V half-bridge driver IC, a 100V 3-phase driver IC, and a 60V 3-phase driver IC. These products all support 100 percent duty cycle operation. Plus, demo boards using AOS’ motor driver IC and AlphaSGT™ MOSFETs (30V-150V) will be featured.
- eFuse: AOS’ Hot Swap Controllers and Power MOSFET combined into a single eFuse package. The eFuse can improve the system’s reliability by isolating the load from the main power rails in case of a fault condition. AOS will announce its latest 12V/60A eFuse products in May 2025.
- State-of-the-art Packaging: AOS’ highly efficient 25V-150V MOSFETs are available in advanced packaging, including a double-sided cooling DFN 5×6 that delivers industry-leading thermal resistance. Also available are two robust packages, LFPAK 5×6 package and the GLPAK™, which features gull-wing leads for enhanced board reliability and larger copper clips that significantly improve current carrying capability. In addition, the GTPAK™ is a topside cooling package designed with a large exposed pad for more efficient heat transfer.
Original – Alpha and Omega Semiconductor
- Automotive and Industrial: AOS is introducing its AEC-Q101 qualified Generation 3 1200V SiC MOSFET technology that will provide a 20-30 percent loss improvement compared to the already leading Gen 2 technology. This performance enhancement will not come with a penalty to robustness as the Gen3 technology has improved ruggedness, including full HV-H3TRB compliance for harsh environment applications. These new MOSFETs expand the existing automotive-qualified 650V, 750V, 1200V, and 1700V SiC MOSFETs in through-hole and surface mount/topside cooled packages. The 1200V Gen3 SiC MOSFETs will initially be available from 15mohm to 40mohm in TO247-4L packages with production starting May 2025.
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Renesas Electronics Corporation announced its financial results for the first quarter ended March 31, 2025.
Key Highlights:
- Revenue: 366.7 billion yen (approximately $2.37 billion), representing a 1.7% year-over-year increase.
- Gross Margin: 57.8%, maintaining strong profitability levels.
- Operating Income: 96.9 billion yen (approx. $627 million), a 6.4% increase year-over-year.
- Net Income: 70.5 billion yen (approx. $455 million), up 5.8% compared to Q1 2024.
Company’s focus on enhancing profitability and maintaining operational discipline allowed it to deliver a resilient performance despite mixed demand conditions in key end markets, including automotive and industrial sectors.
Strategic Progress: Renesas continues its investment in innovation and strategic initiatives:
- Advancements in power management, analog, and microcontroller products.
- Strengthening leadership in automotive solutions, including ADAS and electrification.
- Expanding its reach into the industrial automation and energy sectors.
Outlook for Q2 2025:
- Revenue Guidance: Approximately 380 billion yen.
- Gross Margin Forecast: Around 58.0%.
Renesas remains committed to navigating global economic uncertainty through cost optimization, diversified product offerings, and a strong focus on next-generation technologies.
Original – Renesas Electronics
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STMicroelectronics has announced its financial results for the first quarter of 2025, reflecting both the challenges of a shifting market and the company’s strategic transformation efforts.
Key Highlights:
- Net Revenues: $2.52 billion, down 27.3% year-over-year
- Gross Margin: 33.4%
- Operating Income: $3 million
- Net Income: $56 million, representing an 89.1% drop compared to Q1 2024
CEO Jean-Marc Chery acknowledged that while Q1 revenues aligned with expectations, the decline was mainly attributed to lower performance in the Automotive and Industrial sectors, partially offset by stronger results in Personal Electronics.
Despite the decline, ST’s book-to-bill ratio improved, particularly within Automotive and Industrial, signaling stronger order intake compared to shipments.
Looking Ahead:
- ST expects Q2 2025 net revenues of approximately $2.71 billion, a sequential growth of 7.7%.
- Gross margin is forecasted to remain steady at around 33.4%, impacted by unused capacity charges.
- The company is maintaining its 2025 net CapEx target between $2.0 billion and $2.3 billion to support its manufacturing reshaping initiatives.
Strategic Initiatives: STMicroelectronics is pushing forward with its company-wide restructuring program, aiming to reshape its manufacturing footprint and resize its global cost base. The program targets annual cost savings in the high triple-digit million-dollar range by the end of 2027.
Chery emphasized that ST views Q1 2025 as the bottom of the cycle and is focused on innovation, manufacturing efficiency, and cost control to navigate the uncertain global environment.
Segment Performance:
- Analog, Power & Discrete, MEMS and Sensors (APMS): Revenues down 28% YoY
- Power and Discrete Products (P&D): Revenues fell 37.1% YoY, operating margin turned negative
- Embedded Processing (EMP): Revenues declined 29.1% YoY
- RF & Optical Communications (RF&OC): Revenues down 19.2% YoY
Financial Strength:
- Free cash flow turned positive at $30 million, compared to a negative $134 million a year ago.
- Net financial position remained robust at $3.08 billion.
Original – STMicroelectronics
