• Texas Instruments Announced New Environmental Sustainability Targets

    Texas Instruments Announced New Environmental Sustainability Targets

    2 Min Read

    Texas Instruments announced new environmental sustainability targets that expand the company’s use of renewable electricity over the next six years, with key milestones to reach 100% in its 300mm manufacturing operations by 2025, 100% in its U.S. operations by 2027, and 100% in its worldwide operations by 2030. 

    As the company expands its internal manufacturing capacity to support customer demand, these goals will ensure that TI’s industry-leading 300mm wafer fabs, as well as its newest assembly and test sites, will be entirely powered by renewable electricity. 

    “Our semiconductors play a critcal role in helping our customers developer smaller, more efficient and affordable technology that makes electrification, renewable energy and energy storage systems possible,” said Heidi Means, TI’s vice president of Worldwide Environmental, Safety and Health. “These short- and medium-term energy goals will continue TI’s positive trajectory to reduce our environmental impact while we continue to expand our manufacturing capacity to support our customers.”

    TI has steadily grown its use of renewable electricity from a combination of sources including onsite solar and power purchase agreements (PPAs). Since 2020, the company has:

    • Continued to increase its absolute use of renewable electricity annually.
    • Shifted its operations in the Philippines, which includes two assembly and test sites, to 100% renewable electricity.
    • Invested in the company’s first onsite, rooftop solar installation at its Bangalore, India, site.
    • Started receiving more than 65MW of renewable electricity from its long-term PPA investments in wind and solar energy projects in North Texas.

    Original – Texas Instruments

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  • Toshiba Started Mass Production of the Third Generation 1700 V SiC MOSFET Module

    Toshiba Started Mass Production of the Third Generation 1700 V SiC MOSFET Module

    2 Min Read

    Toshiba Electronic Devices & Storage Corporation has started mass production of a 3rd generation silicon carbide (SiC) 1700 V and drain current (DC) rating 250 A of SiC MOSFET module “MG250V2YMS3” for industrial equipment and has expanded its lineup.

    The new product MG250V2YMS3 offers low conduction loss with low drain-source on-voltage (sense) of 0.8 V (typ.). It also offers low switching loss with low turn-on switching loss of 18 mJ (typ.) and low turn-off switching loss of 11 mJ (typ.). This helps to reduce power loss of equipment and the size of cooling device.

    MG250V2YMS3 has a low stray inductance of 12 nH (typ.) and is capable of high-speed switching. In addition, it suppresses surge voltage in switching operation. Thus, it is available for high frequency isolated DC-DC converter.

    Toshiba’s SiC MOSFET module of 2-153A1A package has a lineup of four existing products, MG250YD2YMS3 (2200 V / 250 A), MG400V2YMS3 (1700 V / 400 A), and MG600Q2YMS3 (1200 V / 600 A), including new products. This provides a wider range of product selection.

    Toshiba will continue to meet the needs for high efficiency and the downsizing of industrial equipment.

    Applications

    Industrial equipment

    • Inverters and converters for railway vehicles
    • Auxiliary power supply for railway vehicles
    • Renewable energy power generation systems
    • Motor control equipment for industrial equipment
    • High frequency DC-DC converters, etc.

    Features

    • Low drain-source on-voltage (sense):
      VDS(on)sense=0.8 V (typ.) (ID=250 A, VGS=+20 V, Tch=25 °C)
    • Low turn-on switching loss:
      Eon=18 mJ (typ.) (VDD=900 V, ID=250 A, Tch=150 °C)
    • Low turn-off switching loss:
      Eoff=11 mJ (typ.) (VDD=900 V, ID=250 A, Tch=150 °C)
    • Low stray inductance:
      LsPN=12 nH (typ.)

    Original – Toshiba

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  • Vishay Intertechnology and Nexperia Close Newport Wafer Fab Deal

    Vishay Intertechnology and Nexperia Close Newport Wafer Fab Deal

    1 Min Read

    Vishay Intertechnology, Inc. and Nexperia B.V. announced in November 2023 that they had entered into an agreement that Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K.

    At the time of that announcement, the closing of Newport wafer fab transaction was subject to UK government review, the purchase rights of a third party, and customary closing conditions. Nexperia is pleased to announce that all conditions to the sale have now been met and the sale of Newport wafer fab to Vishay is now finalised, today, 6th March, securing a future for its employees and for the site.

    Original – Nexperia

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