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Dr. Christian Kranert, Group Manager Equipment and Defect Simulation of the Materials Department at Fraunhofer IISB, developed a new software for the fast, full-wafer and automated detection and classification of crystal defects in silicon carbide (SiC) substrates. He also pushed the licensing of his new, so-called x-ray ropography (XRT) toolbox to the users of the x-ray topography measuring device XRTmicron from Rigaku. Another highlight is the establishment of two new SEMI International Standards for 4H-SiC defect quantification using XRT test methods.
These outstanding results confirm the success of the Joint Labs model at Fraunhofer IISB. Joint Labs are an exclusive opportunity to collaborate with Fraunhofer IISB in an industry-compatible laboratory environment.
Rigaku Europe SE and Fraunhofer IISB are operating the Center of Expertise for X-ray Topography, a joint lab that is located at the IISB’s headquarters in Erlangen, Germany. This fruitful collaboration is vividly illustrated by the new business in the field of SiC wafer mapping, which Rigaku has built up around its XRTmicron product line in less than two years.
The new LZE Prize honors Fraunhofer IISB employees for exceptional achievements. The LZE Prize is awarded for outstanding acquisitions or particularly successful collaborations, new networks with domestic and foreign partners or above-average achievements in the transfer of know-how from research to industry. The Leistungszentrum Elektroniksysteme (LZE) is a joint initiative of the Fraunhofer-Gesellschaft, Fraunhofer IIS, Fraunhofer IISB, and FAU Erlangen-Nürnberg (FAU), together with industry partners and further research institutes.
Original – Fraunhofer IISB
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The paradigm shift towards offloading complexity to suppliers and adopting smaller IGBT modules is evident in various applications. In response to the global push for downsizing and integration, Infineon Technologies AG introduced the 4.5 kV XHP™ 3 IGBT modules that will fundamentally change the landscape for medium voltage drives (MVD) and transportation applications operating at 2000 to 3300 V AC in 2- and 3-level topologies.
Applications benefiting from the new devices include large conveyor belts, pumps, high-speed trains, locomotives, as well as commercial, construction and agricultural vehicles (CAV).
The XHP family comprises a 450 A dual IGBT module with TRENCHSTOP™ IGBT4 and an emitter-controlled diode, and a 450 A double diode module with emitter-controlled E4 Diode. Both modules feature improved isolation of 10.4 kV. Together, they help to simplify paralleling and downsizing without sacrificing efficiency.
Previously, complex busbars were required to parallelize switching modules, resulting in complicated design efforts and leakage inductance. The innovative design of the XHP family simplifies paralleling by conveniently placing the connections side by side. As a result, only a single straight busbar is required for paralleling.
The 4.5 kV XHP family also allows developers to reduce the number of units. Conventional IGBT solutions use multiple single switches and a double diode. With the new devices, however, designs can be reduced to two dual switches and a smaller double diode – a significant step forward in integrated drives.
The combination of the XHP 3 FF450R45T3E4_B5 dual switch and the DD450S45T3E4_B5 double diode enables significant cost savings and a smaller footprint. For example, Infineon’s previous IGBT solutions required four 140 x 190 mm² or 140 x 130 mm² switches and one 140 x 130 mm² double diode. With the new XHP family, the components can be reduced to two 140 x 100 mm² dual switches and a smaller 140 x 100 mm² double diode.
The IGBT modules FF450R45T3E4_B5 and DD450S45T3E4_B5 are available now. More information is available at www.infineon.com/XHP.
Original – Infineon Technologies
