-
Transphorm, Inc. introduced the SuperGaN® TOLT FET. With an on-resistance of 72 milliohms, the TP65H070G4RS transistor is the industry’s first top-side cooled surface mount GaN device in the JEDEC-standard (MO-332) TOLT package. The TOLT package offers flexibility of thermal management to customers where system requirements do not allow for the more conventional surface mount devices with bottom-side cooling.
The thermal performance of the TOLT is similar to that of the widely used, thermally robust TO-247 through-hole packages and delivers the added benefit of highly efficient manufacturing processes enabled by SMD-based printed circuit board assembly (PCBA).
The TP65H070G4RS leverages Transphorm’s robust, high performance 650-volt normally-off d-mode GaN platform offering improved efficiency over silicon, silicon carbide, and other GaN offerings via lower gate charge, output capacitance, crossover loss, reverse recovery charge, and dynamic resistance.
The SuperGaN platform advantages combined with the TOLT’s better thermals and system assembly flexibility results in a high performance, high reliability GaN solution for customers seeking to bring to market power systems with higher power density and efficiency at an overall lower power system cost.
Transphorm is engaged with multiple global partners for high power GaN, including lead customers in server and storage power, a global leader in the energy/microinverter space, an innovative manufacturer of off-grid power solutions, and a leader in satellite communications.
“Surface mount devices such as the TOLL and the TOLT offer various benefits such as lower internal inductance as well as simpler board mounting during manufacturing. The TOLT adds to that more flexible overall thermal management with through-hole like thermal performance by using top-side cooling,” said Philip Zuk, SVP Business Development and Marketing, Transphorm.
“These devices are commonly found in mid to high power system applications for key market segments including high performance computing (Server, Telecom, AI Power), Renewables and Industrial, and Electric Vehicles, some of which our GaN technology already powers today. we’re very excited to enable our customers to realize additional system level benefits with TOLT SuperGaN solutions.”
Today’s product release comes on the heels of Transphorm’s recent introduction of its three new TOLL FETs. Addition of the TOLT expands the company’s product offerings yet again. Its availability highlights Transphorm’s commitment to supporting customer preferences by making its SuperGaN platform accessible in various packages across the widest power range.
Device Specifications
SuperGaN devices lead the market with unmatched:- Reliability at < 0.05 FIT
- Gate safety margin at ± 20 V
- Noise immunity at 4 V
- Temperature coefficient of resistance (TCR) at 20% lower than e-mode normally-off GaN
- Drive flexibility with standard off-the-shelf silicon drivers
The robust 650 V SuperGaN TOLT device is JEDEC qualified. Because the normally-off d-mode platform pairs the GaN HEMT with an integrated low voltage silicon MOSFET, the SuperGaN FETs are easy to drive with commonly used off-the-shelf gate drivers. They can be used in various hard- and soft-switching AC-to-DC, DC-to-DC, and DC-to-AC topologies to increase power density while reducing system size, weight, and overall cost.
Part Dimensions (mm) RDS(on) (mΩ) typ RDS(on) (mΩ) max Vth (V) typ Id (25°C) (A) max TP65H070G4RS 10 x 15 72 85 4 29 Original – Transphorm
-
Transphorm, Inc. introduced three SuperGaN® FETs in TOLL packages with on-resistances of 35, 50, and 72 milliohms. Transphorm’s TOLL package configuration is industry standard, meaning the SuperGaN TOLL FETs can be used as drop-in replacements for any e-mode TOLL solution.
The new devices also offer Transphorm’s proven high voltage dynamic (switching) on-resistance reliability that is generally lacking in leading foundry-based e-mode GaN offerings. To sample the devices, visit Transphorm’s product page: https://www.transphormusa.com/en/products/.
The three surface mount devices (SMDs) support higher power applications operating within an average range of 1 to 3 kilowatts. These power systems are typically found in high performance segments such as computing (AI, server, telecom, data center), energy and industrial (PV inverters, servo motors), and other broad industrial markets which, collectively, have a current global GaN TAM of $2.5B. Notably, the FETs are optimal solutions for today’s rapidly expanding AI systems that rely on GPUs requiring 10 to 15 times the power of traditional CPUs.
Transphorm’s high power GaN devices are already widely supplied to leading customers who use them to power in-production high performance systems including datacenter power supplies, high power gaming PSUs, UPSes, and microinverters. These applications can also be supported by the TOLL devices as can electric-vehicle-based DC-to-DC converters and onboard chargers, with the underlying SuperGaN die already automotive (AEC-Q101) qualified.
The SuperGaN TOLL FETs represent the sixth package type offered by Transphorm, giving customers the widest selection of packages to meet their unique design requirements. As with all Transphorm products, the TOLL devices harness the inherent performance and reliability advantages made possible by the normally-off d-mode SuperGaN platform.
For a detailed competitive analysis between SuperGaN and e-mode GaN, download the company’s latest white paper titled The Fundamental Advantages of d-Mode GaN in Cascode Configuration. The white paper’s conclusion aligns with a head-to-head comparison released earlier this year showing the 72 milliohm SuperGaN FETs outperforming larger 50 milliohm e-mode devices in a commercially available 280 W gaming laptop charger.
SuperGaN devices lead the market with unmatched:
- Reliability at < 0.03 FIT
- Gate safety margin at ± 20 V
- Noise immunity at 4 V
- Temperature coefficient of resistance (TCR) at 20% lower than e-mode
- Drive flexibility with standard drivers and protection circuits readily available in silicon-based controllers/drivers
Device Specifications
The robust 650 V SuperGaN TOLL devices are JEDEC qualified. Because the normally-off d-mode platform pairs the GaN HEMT with a low voltage silicon MOSFET, the SuperGaN FETs are easy to drive with commonly used off-the-shelf gate drivers. They can be used in various hard- and soft-switching AC-to-DC, DC-to-DC, and DC-to-AC topologies to increase power density while reducing system size, weight, and overall cost.Part Dimensions (mm) RDS(on) (mΩ) typ RDS(on) (mΩ) max Vth (V) typ Id (25°C) (A) max TP65H035G4QS 10 x 12 35 41 4 46.5 TP65H050G4QS 10 x 12 50 60 4 34 TP65H070G4QS 10 x 12 72 85 4 29 Original – Transphorm
