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Toshiba Electronic Devices & Storage Corporation announced the termination of its memorandum of understanding (MOU) with SICC Co., Ltd., originally signed in August 2025 to explore collaboration in silicon carbide (SiC) power semiconductor wafers.
According to Toshiba, the decision to end the agreement was made in September 2025 after further discussions between the two companies. The MOU had been intended to support potential cooperation in SiC wafer supply and development, aiming to strengthen Toshiba’s position in the growing SiC power device market.
The conclusion of the agreement marks the end of the preliminary collaboration framework, though Toshiba remains committed to advancing its SiC technology and supply chain strategy to meet increasing global demand for high-efficiency power semiconductors.
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation (“Toshiba”) and SICC Co., Ltd. (“SICC”) have signed a memorandum of understanding (MOU) under which they will explore collaboration in improving the characteristics and quality of silicon carbide (SiC) power semiconductor wafers developed and manufactured by SICC, and expanded supply of stable, high-quality wafers from SICC to Toshiba. The two companies will discuss the scope of their joint efforts and mutual support.
Power semiconductors convert and control power supply, and are seen an essential tool for cutting power consumption in all kinds of electrical and electronic equipment, and for achieving carbon neutrality. Along with increasing efficiency requirements, demand for power semiconductors is expected to grow. This is particularly true for power semiconductors formed on SiC wafers, which operate in high-temperature environments, such as in electric vehicles and renewable energy systems. But this is an area where securing reliability and stable quality is an additional requirement to power efficiency, and can still be a challenge.
Toshiba has an established track record in developing, manufacturing and selling SiC power semiconductors for railways, and is currently accelerating the development of SiC devices for applications including server power supplies and the automotive segment. The company aims to further reduce power losses in the devices and to improve their reliability and efficiency in future high-efficiency power conversion applications. Achieving these goals requires close collaboration with an innovator in SiC wafer technology. Collaboration with SICC, a global leader in SiC wafer development and mass production technology, is expected to drive forward optimal solutions for various applications and accelerate business expansion.
Since its founding in 2010, SICC has been exclusively dedicated to the development and production of single-crystal SiC wafers. With a business philosophy centered on quality and technological development, SICC holds a top-five position globally in terms of related patents. Following its initial public offering in 2022, the first in China to focus on SiC, SICC has achieved vertical expansion in global business and market share.
In 2024, the company introduced the market’s first 12-inch SiC wafer, and in 2025 it announced 12-inch wafers for all products, including n-type, semi-insulating, and p-type. Moving forward, SICC aims to continue to contribute to its customers through quality and cutting-edge technology. In the proposed collaboration with Toshiba, SICC aims to link SiC power semiconductor manufacturers’ requirements and expectations for SiC wafer element technology to improved wafer quality and reliability, and to contribute to the expansion of the SiC power semiconductor market.
Toshiba and SICC will continue to discuss specific collaboration details that can lead to the development of their respective businesses based on the MOU signed this time.
Original – Toshiba
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Infineon Technologies AG has signed an agreement with Chinese silicon carbide (SiC) supplier SICC to diversify Infineon’s SiC material supplier base and to secure additional competitive SiC sources. Under the agreement, SICC will supply the Germany-based semiconductor manufacturer with competitive and high-quality 150-millimeter wafers and boules for the manufacturing of SiC semiconductors, covering a double-digit share of the forecasted demand in the long term.
The agreement will focus in the first phase on 150-millimeter SiC material, but SICC SiC material supply will also support Infineon’s transition to 200-millimeter wafer diameter. This will generally contribute to supply chain stability, in particular with regard to the growing demand for SiC semiconductor products for automotive, solar and EV charging applications as well as energy storage systems in the Chinese market, and will generally support the rapid growth of the emerging semiconductor material SiC.
“Infineon is significantly expanding its manufacturing capacities at its production sites in Malaysia and Austria in order to serve the growing SiC demand. In this context, we are implementing a multi-supplier and multi-country sourcing strategy to increase resilience for the benefit of our broad customer base and are securing new competitive top-quality sources globally, matching the highest standards in the market,” said Angelique van der Burg, Chief Procurement Officer at Infineon.
“SICC’s substrates are widely used in the Power SiC field. We are pleased to team up with Infineon as our customer, a global leader in power semiconductors. SICC will continuously expand capacity to add more value for its global customers. We value Infineon as an excellent leading strategic customer and we look forward to jointly enhancing SiC industry development and promoting global digitalization, low-carbonization, and sustainable development,” said Zong Yanmin, CEO of SICC.
Infineon is currently expanding its SiC manufacturing capacity in order to achieve its target of a 30 percent global market share by the end of the decade. Infineon’s SiC manufacturing capacity will increase tenfold by 2027. A new plant in Kulim, Malaysia is scheduled to start production in 2024, adding to Infineon’s manufacturing capacities in Villach, Austria. Today, Infineon already provides SiC semiconductors to more than 3,600 automotive and industrial customers worldwide.
Original – Infineon Technologies
