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Power Integrations has unveiled new details on the capabilities of its PowiGaN gallium-nitride technology designed to power the next generation of AI data centers. The company outlined the performance and system-level advantages of its 1250 V and 1700 V PowiGaN devices in a white paper released at the 2025 OCP Global Summit in San Jose, where NVIDIA provided an update on the emerging 800 VDC data center architecture.
The paper demonstrates how Power Integrations’ high-voltage PowiGaN HEMTs enable compact, high-efficiency 800 VDC power conversion systems with efficiency exceeding 98 percent. The company’s 1250 V PowiGaN switch delivers superior performance compared to stacked 650 V GaN FETs and conventional 1200 V silicon carbide (SiC) devices, offering greater power density, lower switching losses, and proven field reliability.
Power Integrations also highlighted its InnoMux-2 EP integrated circuits as an advanced solution for auxiliary power systems in 800 VDC data center designs. Featuring an integrated 1700 V PowiGaN switch, the device supports input voltages up to 1000 VDC and achieves over 90 percent efficiency in compact, fanless liquid-cooled architectures.
According to Roland Saint-Pierre, vice president of product development at Power Integrations, the industry’s move toward 800 VDC architectures addresses rising power demands in AI data centers by simplifying rack designs, improving space utilization, and reducing copper use. He emphasized that the company’s 1250 V and 1700 V PowiGaN devices are ideally suited to meet the efficiency, reliability, and power-density requirements of these high-performance systems.
Power Integrations is currently the only company supplying 1250 V and 1700 V GaN switches in high-volume production. Since introducing its first GaN ICs in 2018, the company has shipped more than 175 million GaN devices across a wide range of applications, including data centers, electric vehicles, and fast chargers.
The introduction of PowiGaN technology for 800 VDC data centers marks a significant step toward more efficient, scalable, and sustainable power conversion systems to support the rapidly growing energy demands of AI computing infrastructure.
Original – Power Integrations
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Power Integrations released the world’s highest-voltage, single-switch gallium-nitride (GaN) power supply IC, featuring a 1250-volt PowiGaN™ switch. InnoSwitch™3-EP 1250 V ICs are the newest members of Power Integrations’ InnoSwitch family of off-line CV/CC QR flyback switcher ICs, which feature synchronous rectification, FluxLink™ safety-isolated feedback and an array of switch options: 725 V silicon, 1700 V silicon carbide, and PowiGaN in 750 V, 900 V and now 1250 V varieties.
The switching losses for Power Integrations’ proprietary 1250 V PowiGaN technology are less than a third of that seen in equivalent silicon devices at the same voltage. This results in power conversion efficiency as high as 93 percent – enabling highly compact flyback power supplies that can deliver up to 85 W without a heatsink.
Radu Barsan, vice president of technology at Power Integrations, said: “Power Integrations continues to advance the state of the art in high-voltage GaN technology development and commercial deployment, rendering even the best high-voltage silicon MOSFETs obsolete along the way. We were first to market with high-volume shipments of GaN-based power-supply ICs in 2019, and earlier this year introduced a 900-volt version of our GaN-based InnoSwitch products.
Our ongoing development of higher voltage GaN technology, illustrated here by our new 1250 V devices, extends the efficiency benefits of GaN to an even wider range of applications, including many currently served by silicon-carbide technology.”
Designers using the new InnoSwitch3-EP 1250 V ICs can confidently specify an operating peak voltage of 1000 V, which allows for industry-standard 80 percent de-rating from the 1250 V absolute maximum. This provides significant headroom for industrial applications and is particularly valuable in challenging power grid environments where robustness is an essential defense against grid instability, surge and other power perturbations.
Original – Power Integrations
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Power Integrations™ is providing advanced PowiGaN™ gallium-nitride (GaN) technology, expert design support, and financial sponsorship for Team aCentauri in the 3,000 km Bridgestone World Solar Challenge later this month. Power Integrations’ Mr. Green will follow Team aCentauri and the 37 other entrants across the Australian Outback as they push the boundaries of innovation in efficiency, aerodynamics, speed and range for solar-powered cars.
“After studying Power Integrations’ extensive list of reference designs, Team aCentauri asked us to help them design a power converter based on the 750-volt, InnoSwitch™3-EP with PowiGaN technology,” said Trevor Hiatt, director of marketing at Power Integrations. “With our IC and expert design support, the team not only boosted energy efficiency to 95.7 percent while the system operates at maximum power, but also improved efficiency by more than 50 percent while the system drives light loads – which is most of the time.”
The Bridgestone World Solar Challenge begins in Darwin on October 22 and is expected to conclude in Adelaide on October 29.
Original – Power Integrations
