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Power Integrations has announced a major extension of its PowiGaN gallium nitride technology to a 2200 V rating, which the company says exceeds the voltage capability of other commercially available GaN technologies. The development significantly expands the addressable voltage range for GaN and targets emerging high-voltage applications including AI data centers, electric vehicles, renewable energy, battery storage and HVDC infrastructure.
The 2200 V technology is particularly relevant as power architectures migrate toward higher DC bus voltages to improve efficiency and power density. Power Integrations highlighted next-generation AI data centers as a major opportunity, with industry roadmaps moving beyond today’s 800 VDC architectures toward potential 1500 V distribution systems. The additional voltage headroom provided by 2200 V GaN could enable designers to use GaN in applications where voltage requirements have historically favored silicon carbide.
Power Integrations is already extending GaN into these higher-voltage systems. Its 1700 V PowiGaN ICs are being designed into single-stage auxiliary power applications in data centers, while 1250 V devices provide an alternative to stacked lower-voltage switches in the main power path of 800 VDC architectures. The new 2200 V platform pushes this strategy further by providing sufficient voltage margin for future higher-voltage buses.
The development is strategically important for the competitive positioning of GaN versus SiC. GaN has traditionally delivered advantages in switching frequency and power density but has been constrained by lower commercially available voltage ratings. High-voltage applications have therefore remained an important stronghold for SiC. By extending GaN to 2200 V, Power Integrations is attempting to bring GaN’s high-frequency characteristics into applications previously considered beyond its practical voltage range.
The potential system-level impact could be significant. Higher-voltage GaN devices could reduce the need to series-connect multiple lower-voltage switches, simplifying power stages while reducing component count and potentially improving power density and reliability. Power Integrations specifically identifies solar inverters, HVDC systems, advanced industrial power conversion, EV systems and data center infrastructure as potential applications.
The announcement also highlights how AI infrastructure is accelerating technology competition between GaN and SiC. Yole Group analyst Roy Dagher noted that GaN’s historical voltage ceiling has limited its participation in the main power path of high-voltage data center architectures, leaving much of this opportunity to SiC. According to the figures cited in the announcement, Yole expects the power GaN device market to reach $3.5 billion by 2031.
Original – Power Integrations
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Power Integrations has unveiled new details on the capabilities of its PowiGaN gallium-nitride technology designed to power the next generation of AI data centers. The company outlined the performance and system-level advantages of its 1250 V and 1700 V PowiGaN devices in a white paper released at the 2025 OCP Global Summit in San Jose, where NVIDIA provided an update on the emerging 800 VDC data center architecture.
The paper demonstrates how Power Integrations’ high-voltage PowiGaN HEMTs enable compact, high-efficiency 800 VDC power conversion systems with efficiency exceeding 98 percent. The company’s 1250 V PowiGaN switch delivers superior performance compared to stacked 650 V GaN FETs and conventional 1200 V silicon carbide (SiC) devices, offering greater power density, lower switching losses, and proven field reliability.
Power Integrations also highlighted its InnoMux-2 EP integrated circuits as an advanced solution for auxiliary power systems in 800 VDC data center designs. Featuring an integrated 1700 V PowiGaN switch, the device supports input voltages up to 1000 VDC and achieves over 90 percent efficiency in compact, fanless liquid-cooled architectures.
According to Roland Saint-Pierre, vice president of product development at Power Integrations, the industry’s move toward 800 VDC architectures addresses rising power demands in AI data centers by simplifying rack designs, improving space utilization, and reducing copper use. He emphasized that the company’s 1250 V and 1700 V PowiGaN devices are ideally suited to meet the efficiency, reliability, and power-density requirements of these high-performance systems.
Power Integrations is currently the only company supplying 1250 V and 1700 V GaN switches in high-volume production. Since introducing its first GaN ICs in 2018, the company has shipped more than 175 million GaN devices across a wide range of applications, including data centers, electric vehicles, and fast chargers.
The introduction of PowiGaN technology for 800 VDC data centers marks a significant step toward more efficient, scalable, and sustainable power conversion systems to support the rapidly growing energy demands of AI computing infrastructure.
Original – Power Integrations
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Power Integrations released the world’s highest-voltage, single-switch gallium-nitride (GaN) power supply IC, featuring a 1250-volt PowiGaN™ switch. InnoSwitch™3-EP 1250 V ICs are the newest members of Power Integrations’ InnoSwitch family of off-line CV/CC QR flyback switcher ICs, which feature synchronous rectification, FluxLink™ safety-isolated feedback and an array of switch options: 725 V silicon, 1700 V silicon carbide, and PowiGaN in 750 V, 900 V and now 1250 V varieties.
The switching losses for Power Integrations’ proprietary 1250 V PowiGaN technology are less than a third of that seen in equivalent silicon devices at the same voltage. This results in power conversion efficiency as high as 93 percent – enabling highly compact flyback power supplies that can deliver up to 85 W without a heatsink.
Radu Barsan, vice president of technology at Power Integrations, said: “Power Integrations continues to advance the state of the art in high-voltage GaN technology development and commercial deployment, rendering even the best high-voltage silicon MOSFETs obsolete along the way. We were first to market with high-volume shipments of GaN-based power-supply ICs in 2019, and earlier this year introduced a 900-volt version of our GaN-based InnoSwitch products.
Our ongoing development of higher voltage GaN technology, illustrated here by our new 1250 V devices, extends the efficiency benefits of GaN to an even wider range of applications, including many currently served by silicon-carbide technology.”
Designers using the new InnoSwitch3-EP 1250 V ICs can confidently specify an operating peak voltage of 1000 V, which allows for industry-standard 80 percent de-rating from the 1250 V absolute maximum. This provides significant headroom for industrial applications and is particularly valuable in challenging power grid environments where robustness is an essential defense against grid instability, surge and other power perturbations.
Original – Power Integrations
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Power Integrations™ is providing advanced PowiGaN™ gallium-nitride (GaN) technology, expert design support, and financial sponsorship for Team aCentauri in the 3,000 km Bridgestone World Solar Challenge later this month. Power Integrations’ Mr. Green will follow Team aCentauri and the 37 other entrants across the Australian Outback as they push the boundaries of innovation in efficiency, aerodynamics, speed and range for solar-powered cars.
“After studying Power Integrations’ extensive list of reference designs, Team aCentauri asked us to help them design a power converter based on the 750-volt, InnoSwitch™3-EP with PowiGaN technology,” said Trevor Hiatt, director of marketing at Power Integrations. “With our IC and expert design support, the team not only boosted energy efficiency to 95.7 percent while the system operates at maximum power, but also improved efficiency by more than 50 percent while the system drives light loads – which is most of the time.”
The Bridgestone World Solar Challenge begins in Darwin on October 22 and is expected to conclude in Adelaide on October 29.
Original – Power Integrations
