Micro Commercial Components Tag Archive

  • MCC Semi Partners with Farnell to Expand Global Reach of Discrete Semiconductor Solutions

    MCC Semi Partners with Farnell to Expand Global Reach of Discrete Semiconductor Solutions

    1 Min Read

    MCC Semi announced a global distribution agreement with Farnell, an innovative distributor and technology leader. 

    Highly regarded by the engineering industry, Farnell grew from serving the UK market to a leading global technology platform. Farnell’s element14 Community is where great minds in electronics find resources, discussions, and more to help solve design challenges. MCC Semi team is proud to join this community alongside engineers, designers, and purchasing professionals who are passionate about the future of power electronics.

    By partnering with Farnell, MCC is expanding its presence in growing markets throughout the world. Now, MCC can provide many benefits of working with the company to a broader customer base, including:  

    • Supply chain assurance thanks to integrated device manufacturer model
    • Exceptional support with local expertise and deep industry knowledge
    • 10,000+ top-notch products (25% AEC-Q101 qualified) in a broad range of categories, package types, and technologies 
    • Ongoing research & development that enables innovation
    • Competitive lead times and pricing to maintain an edge

    Combining MCC’s expertise with Farnell’s global reach and innovation represents a significant step forward in delivering high-quality solutions to the customers.

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  • MCC Unveils 150V MOSFET with Ultra-Low 4mΩ On-Resistance in Compact TOLL Package

    MCC Unveils 150V MOSFET with Ultra-Low 4mΩ On-Resistance in Compact TOLL Package

    1 Min Read

    MCC Semi revealed the latest MOSFET designed to help engineers balance efficiency and thermal performance in high-power applications. The 150V MCTL4D0N15YH boasts a remarkably low on-resistance of 4mΩ, minimizing conduction losses for optimal efficiency.

    Housed in a robust TOLL package, this component features advanced split-gate trench (SGT) technology and a junction-to-case thermal resistance of 0.39K/W for superior heat dissipation.

    Equipped with an operating junction temperature capability of up to 175°C, this new MOSFET is the ideal solution for demanding applications, including battery management systems, motor drives, and DC-DC converters.

    Offering versatility across multiple industries, MCTL4D0N15YH enhances system performance and longevity while reducing overall energy consumption.

    Features & Benefits:

    • SGT Technology: Ensures outstanding electrical performance and efficiency.
    • Low On-Resistance (4mΩ): Minimizes power losses, enhancing system efficiency.
    • Low Conduction Losses: Reduce energy waste, optimizing energy usage.
    • Low Junction-to-Case Thermal Resistance (0.39K/W): Provides excellent heat dissipation capabilities.
    • High Operating Junction Temperature (up to 175°C): Delivers reliability in high-temperature environments.

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  • MCC Semi Announced New P-channel MOSFETs

    MCC Semi Announced New P-channel MOSFETs

    1 Min Read

    MCC Semi announced four new components in advanced P-channel MOSFET lineup. Supporting -100V applications from battery protection to motor drives and high-side switches, MCAC085P10MCAC055P10MCU055P10, and MCU085P10 are made for reliability in challenging environments.

    With a maximum on-resistance of 55mΩ or 85mΩ, these MOSFETs improve overall system efficiency while reducing power dissipation. Leveraging trench technology and superior thermal performance, these versatile solutions provide engineers with high power density in a compact DFN5060 or DPAK package.

    New P-channel MOSFETs are the obvious choice for unmatched performance and effective power management.

    Features & Benefits:
    • Trench MOSFET Technology: Enhances current capacity and reduces on-resistance
    • Low On-Resistance: A maximum RDS(on) of 55mΩ or 85mΩ minimizes power consumption and boosts efficiency
    • Low Conduction Losses: Reduce heat generation while improving overall system operation
    • Excellent Thermal Performance: Safeguards device from overheating during use in high-temp scenarios
    • High Power Density: Available in compact DFN5060 and DPAK package options

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  • MCC Introduces 600V MOSFET with Kelvin Pin for Superior High-Voltage Efficiency

    MCC Introduces 600V MOSFET with Kelvin Source Pin for Superior High-Voltage Efficiency

    2 Min Read

    MCC Semi introduced the first high-voltage MOSFET with Kelvin source pin in the compact DFN8080A package. Designed to help engineers balance costs and performance, 600V MSJL120N60FH leverages superjunction technology and an integrated FRED body diode to facilitate high-speed switching and recovery.

    Its low gate charge and RDS(on) of only 100Ω (typ.) significantly improve switching speeds and reduce losses in a range of demanding applications. Featuring junction-to-case thermal resistance of 0.47K/W, this MOSFET assures reliable operation in high-temp environments, making it an intelligent choice for motor drives, solar inverters, industrial controllers, and power supplies.

    With a height of less than 1mm, its low-profile DFN8080A package is well-suited for high-frequency applications where space is limited, and performance is mission-critical.

    For engineers looking to boost efficiency and minimize losses, MSJL120N60FH boasts the perfect combination of features for high-voltage, space-constrained scenarios.

    Features & Benefits:

    • Superjunction technology: Enhances efficiency by reducing on-state resistance.
    • Low on-resistance: Minimizes power dissipation at 100mΩ (typ.).
    • Low conduction losses: Improves overall system efficiency.
    • Low gate charge: Facilitates increased switching speeds.
    • Kelvin source pin: Dramatically reduces switching losses while enhancing efficiency.
    • Excellent thermal resistance: Junction-to-case thermal resistance of 0.47K/W ensures stable operation amid demanding conditions.
    • Integrated FRED body diode: Reduces reverse recovery time for improved switching.
    • High-speed switching: Optimal for high-frequency applications.
    • Compact package size: DFN8080A package with a low-profile height of less than 1mm, perfect for space-constrained designs.

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  • MCC Semi Announced 100V Wide SOA MOSFETs

    MCC Semi Announced 100V Wide SOA MOSFETs

    2 Min Read

    MCC Semi announced the latest innovation in their MOSFET lineup. The 100V wide SOA MCTL2D0N10YHR with split-gate trench technology satisfies the design demands of high-performance applications with ease. Balancing efficiency and reliability in harsh conditions is no longer an issue, thanks to this N-channel power MOSFET’s wide safe operating area (SOA) and a host of efficient characteristics.

    This SOA comparison highlights significant differences in drain current between two 100V MOSFETs, MCTL300N10YB and MCTL2D0N10YHR, at 10ms pulse. This MOSFET’s wide SOA enhances safety and performance while overcoming common challenges engineers face when designing for high-power applications. It also provides a host of features that add up to ultimate efficiency and reliability. With a gate charge and on-resistance of 2mΩ, this MOSFET also optimizes energy use at every angle, reducing operational costs.

    Designed to withstand junction temperatures of up to 175⁰C, this component delivers unquestionable performance in environments where lesser components would fail. Excellent thermal management is also assured, thanks to the TOLL package engineered for superior heat dissipation, which mitigates thermal-related issues.  MCC’s 100V MOSFET is the ideal solution for diverse applications, including telecommunications, computing, audio amplification, and motor controls. 

    Features & Benefits:

    • Wide SOA: Ensures safe operation across a broad range of conditions.
    • Split-gate Trench (SGT) Technology: Provides enhanced performance and efficiency.
    • Low On-Resistance: Maximizes efficiency by minimizing power losses.
    • Low Conduction Losses: Reduces heat generation during operation.
    • Low Gate Charge: Maximizes efficiency by minimizing switching losses.
    • Low Gate Charge: Maximizes efficiency by minimizing switching losses.
    • Excellent Thermal Performance: TOLL package facilitates superior heat dissipation.

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  • MCC Semi Unveiled 5000W TVS Diodes with Superior Protection against Transient Voltage Spikes

    MCC Semi Unveiled 5000W TVS Diodes with Superior Protection against Transient Voltage Spikes

    2 Min Read

    MCC Semi unveiled the latest selection of 5000W TVS diodes designed to provide superior protection against transient voltage spikes. Whether caused by lightning or other electrical disturbances, voltage surges can add up to costly damage and system failures without proper safeguards in place. That’s where our 5000W TVS solutions come in.

    With a broad range of voltages — from 11V to 400V — and a compact yet powerful SMC package, these transient voltage suppressors (TVS) optimize space on the board without sacrificing performance.

    Leveraging glass-passivated junction technology, these TVS diodes ensure the highest durability and reliability in demanding environments at operating junction temperatures of up to 175°C. They also boast IEC 61000-4-2 ESD ratings of 30kV for air and contact discharge for enhanced protection during electrostatic discharge events.

    Rapid response times with capacitance typically less than 3,000 pF and impressive clamping capabilities assure sensitive electronic components are adequately protected, and a leakage current less than 2µA above 11V reduces power losses.

    Available in unidirectional and bidirectional configurations, MCC’s 5000W TVS diodes meet diverse application needs while reducing maintenance costs and boosting overall reliability.

    Features & Benefits:

    • IEC 61000-4-2 ESD Protection: 30kV (Air) and 30kV (Contact) for solid electrostatic discharge protection.
    • Maximum Operating Junction Temperature: Rated up to 175°C for reliable operation in high-temperature environments.
    • Ultra-Fast Response Time: Capacitance typically less than 3000 pF from 0V to breakdown voltage minimum, ensuring immediate protection.
    • Low Leakage Current: Typical ID less than 2µA from 11V to minimize power loss.

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  • MCC Semi Expands Product Portfolio with 1200V Auto-Grade Trench Field-Stop IGBT

    MCC Semi Expands Product Portfolio with 1200V Auto-Grade Trench Field-Stop IGBT

    2 Min Read

    MCC released 1200V Auto-Grade Trench Field-Stop IGBT engineered for demanding automotive applications. MIS80N120NT1YHE3 delivers reliable switching where other components fall short, minimizing losses while maintaining thermal performance.

    Its super TO-220 package design boasts a junction-to-case thermal resistance of only 0.17K/W for maximum heat dissipation in high-voltage scenarios. But the superior thermal performance doesn’t stop there. With a low saturated VCE of just 2.25V and operating junction temperature of up to 150°C, this IGBT enhances energy efficiency and boosts overall performance.

    Advanced trench field-stop technology provides an additional layer of optimized switching efficiency, adding to its reliability. Rigorously tested to achieve AEC-Q101 qualification, this IGBT is equipped with the robustness required in extreme automotive environments.

    From PTC heaters and solid-state relays and electric drive systems, MCC’s new 1200V IGBT is the obvious solution for engineers looking to improve system integrity and efficiency in diverse applications.

    Features & Benefits:

    • AEC-Q101 Qualified: Meets stringent automotive quality standards for enhanced reliability.
    • 1200V High Breakdown Voltage: Capable of handling high-voltage operations, making it ideal for automotive applications.
    • Low Saturated VCE: Achieves 2.25V (typ.) at higher temperatures, minimizing energy loss and enhancing efficiency.
    • Low Switching Losses: Enable efficient operation, contributing to improved overall system performance.
    • Excellent Thermal Performance: Housed in a super TO-220 package (TO-273AA) with a junction-to-case thermal resistance of 0.17K/W, ensuring effective heat dissipation.
    • High Thermal Stability: Maintains performance across a wide temperature range for unwavering operation in varying scenarios.
    • Powerful Short-Circuit Protection: Integrated features safeguard against damage in fault conditions, enhancing safety and dependability.
    • Versatile Application Compatibility: Suitable for a wide range of automotive applications, including PTC heaters, solid-state relays, electric drive systems, renewable energy systems, and industrial motor drives.

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  • MCC Semi Launched Three New 600V MOSFETs

    MCC Semi Launched Three New 600V MOSFETs

    2 Min Read

    MCC Semi rolled out three new 600V MOSFETs that go beyond high performance. Designed with an integrated fast recovery diode, these advanced components help solve the challenges engineers face when trying to maximize efficiency while minimizing power losses and heat generation.

    Ideal for high-voltage applications, MSJWFR60N60MCTK075N60FH, and MCTK105N60FH feature on-resistance in the sub-100mΩ range — with options as low as 30mΩ — to significantly reduce conduction losses and ensure efficient power delivery.

    A low gate charge only adds to their excellence, especially in high-frequency applications where response times are critical. Available in a through-hole TO-247 package and space-saving SMD TOLL-8L options with a Kelvin source connection, these MOSFETs offer a versatile solution for enhancing overall system performance.

    Improve reliability for various applications, such as power supplies, AC-DC converters, motor drives, and renewable energy systems, with these low RDS(on) semiconductors from MCC.

    Features & Benefits:

    • Superjunction MOSFET technology: Enhances efficiency and reduces power losses
    • Low on-resistance: Minimizes conduction losses for improved performance
    • Low conduction losses: Ensures greater efficiency in power applications
    • Low gate charge: Facilitates faster switching and reduced energy consumption
    • Integrated fast recovery diode: Provides rapid recovery for better switching performance
    • High-speed switching: Supports high-frequency operations, perfect for modern applications
    • Versatile packages: Enables design flexibility with through-hole (TO-247) and SMD with Kelvin Source (TOLL-8L-KS) options

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  • MCC Semi Delivers a New 950V SJ MOSFET

    MCC Semi Delivers a New 950V SJ MOSFET

    1 Min Read

    MCC Semi unveiled a new 950V MOSFET – MCU1K4N95SH. While traditional MOSFETs often include energy losses and slower switching, this new superjunction (SJ) MOSFET features a low gate-to-drain charge, significantly reducing conduction losses and amplifying overall efficiency.

    Its superjunction MOSFET technology and on-resistance of only 1.49Ω empower engineers to design for higher voltage ratings without compromising performance. A DPAK (TO-252) package only adds to this MOSFET’s versatility, making it ideal for AC-DC power supplies, LED lighting, charging adapters, solar and energy devices, and other high-voltage applications across multiple industries.

    Features & Benefits:

    • Superjunction (SJ) MOSFET technology enhances efficiency
    • High-voltage rating of 950V is well-suited for demanding applications
    • Low gate charge enables faster switching speeds
    • High-speed switching capabilities improve overall performance

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  • MCC Semi Expands 650V SiC MOSFET Portfolio

    MCC Semi Expands 650V SiC MOSFET Portfolio

    1 Min Read

    MCC Semi is expanding advanced silicon carbide portfolio with six new 650V SiC MOSFETs. Designed for demanding applications, these components boast high-voltage capability and an on-resistance range of 25 mΩ to 100 mΩ. They’re also equipped with avalanche ruggedness, low switching losses, and enable high-speed switching with a low gate charge.

    Their efficiency-boosting design and TO247 package deliver superior thermal performance, while the 3-pin or 4-pin (Kelvin-source pin) options enhance their versatility. These new MOSFETs minimize losses without compromising power handling, making them an intelligent choice for various industrial and telecommunications systems.

    Features & Benefits:

    • High switching speed with low gate charge
    • Low switching losses
    • Wide on-resistance selection ranging from 25 mΩ to 100 mΩ
    • Avalanche ruggedness for enhanced durability
    • TO247 3-pin and 4-pin package options
    • Kelvin-source connection for precision (4-pin only)

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