EPC Space Tag Archive

  • EPC Space Signed Distribution Agreement with Avnet

    EPC Space Signed Distribution Agreement with Avnet

    1 Min Read

    EPC Space announced a distribution agreement with Avnet, a global distributor of electronic components and services. Avnet will be a global distributor for EPC Space’s line of radiation hardened (Rad Hard) GaN power devices qualified for satellite and high-reliability applications.

    EPC Space offers a family of Rad Hard power GaN devices that includes discrete transistors, Integrated Circuits (ICs), and Modules that offer significant performance advantages over competitive silicon-based space level power devices. EPC Space’s GaN technology devices are smaller, have lower resistance, and have superior switching performance compared to silicon-based components and solutions. 

    Critical spaceborne applications that benefit from the performance improvements that EPC Space devices offer include satellite’s DC-DC converters, reaction and momentum wheels, solar array drive assembly, micro-pumps for propulsion systems, and more.

    “Partnering with Avnet, a global leader in distribution solutions, allows EPC Space to offer timely and reliable service to customers seeking high reliability GaN power solutions,” said Bel Lazar, EPC Space’s CEO.

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  • EPC Space Announces Grand Opening of Andover Facility

    EPC Space Announces Grand Opening of Andover Facility

    2 Min Read

    EPC Space announces the Grand Opening of their new facility in Andover, Massachusetts. Guests are invited to join the EPC Space team for a day of activities that will explore the possibilities that GaN presents to significantly outperform silicon-based devices and enable higher power densities, higher efficiencies, and more compact and lightweight circuitry for critical spaceborne missions.

    Radiation hardened (rad hard) GaN improves the performance of power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, lidar for autonomous navigation and docking, and deep space probes.

    Event Highlights

    • Start the day with a warm welcome and enjoy a welcome reception. Guests will receive drink tickets for the upcoming Cocktail Reception and an automatic entry into an exciting raffle.
    • Get a glimpse into EPC Space’s remarkable journey and accomplishments as CEO, Bel Lazar, officially opens the event.
    • Witness the ceremonial opening of our new facility.
    • Explore our facility with guided tours. Immerse yourself in a product showcase and demonstrations, featuring a dedicated Applications table hosted by EPC Space engineers. They will be available to answer questions and demonstrate real-world applications such as DC-DC, POL, and motor control.
    • Book Signing by Dr. Alex Lidow (2:30 PM – 3:30 PM): Take this opportunity to meet with Dr. Alex Lidow, CEO of EPC, and author of “GaN Power Devices and Applications,” who will be available to sign copies.
    • Connect with EPC Space experts for personalized discussions and insights into rad hard GaN technology.
    • Enter for a chance to win exciting prizes during the raffle.
    • Network with fellow attendees and the EPC Space team during the Cocktail Reception.

    To attend send an RSVP by October 18, 2023 to info@epc.space

    “EPC Space is proud to be at the forefront of providing radiation hardened GaN solutions for power conversion to the aerospace industry and beyond,” said Bel Lazar, CEO of EPC Space. “We are happy to invite our customers and partners to be a part of this event and see first-hand  how our technology is shaping the future of high reliability applications”.

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  • EPC Space Introduced Two New Rad-Hard GaN Devices

    EPC Space Introduced Two New Rad-Hard GaN Devices

    2 Min Read

    EPC Space announced the introduction of two new rad-hard GaN transistors with ultra-low on-resistance and high current capability for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET. These devices come packaged in hermetic packages in very small footprints. 

    The EPC7020G is a 200 V, 14.5 mΩ, 200 Apulsed radiation-hardened gallium nitride transistor and the EPC7030G is a 300 V, 32 mΩ, 200 Apulsed radiation-hardened gallium nitride transistor. These devices join the 40 V, 4.5 mΩ EPC7019G and the 100 V, 4.5 mΩ EPC7018G to cover applications including power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, and deep space probes. This product family comes packaged in a compact hermetic package in a footprint less than 45 mm2.

    Part NumberDrain to Source Voltage (VDS)Drain to Source Resistance (RDS(on))Single-Pulse Drain Current (IDM)
    EPC7019G40 V4 mΩ530 A
    EPC7018G100 V6 mΩ345 A
    EPC7020G200 V14.5 mΩ200 A
    EPC7030G300 V32 mΩ200 A

    With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.

    “The G-Package family offers the lowest on-resistance of any packaged rad hard transistor currently on the market,” said Bel Lazar, CEO of EPC Space. “These devices offer mission-critical components with superior figure of merit, significantly smaller size, and lower cost for the space and other high-reliability markets than alternative rad hard silicon solutions”.

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